CN1059285C - Multi-wavelength write multilayer optical information storage and processing element - Google Patents
Multi-wavelength write multilayer optical information storage and processing element Download PDFInfo
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- CN1059285C CN1059285C CN95113370A CN95113370A CN1059285C CN 1059285 C CN1059285 C CN 1059285C CN 95113370 A CN95113370 A CN 95113370A CN 95113370 A CN95113370 A CN 95113370A CN 1059285 C CN1059285 C CN 1059285C
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- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052772 Samarium Inorganic materials 0.000 claims description 8
- 230000005264 electron capture Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 2
- 238000001914 filtration Methods 0.000 abstract description 4
- 238000010893 electron trap Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 68
- 239000011229 interlayer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
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- 238000009738 saturating Methods 0.000 description 4
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Abstract
The invention is a multi-wavelength written multi-layer optical information storage and processing element. It is formed by applying multiple electron-trapping materials with different writing and emission wavelengths on a substrate bNOn the storage film layer aNThe number of layers N is more than or equal to 2. The necessary light filtering film and protective film are arranged on the surface of the film layer. The invention can be used as a high-density optical information storage and processing element and has wide application range.
Description
The present invention is a kind of optical storage and image processing element that computer data is handled that be used for, this element is made of the different Infrared Stimulated Luminescence material of multilayer, it can use the light writing information of different wave length, use the near infrared light sense information, read output signal is for having different colours luminous of different spectral responses at visible region.Thereby the read-write of information can not disturb mutually in the parallel operation of each interlayer, thereby access rate is accelerated.Storage density also will further enlarge.
The development need speed of optical information storage and treatment technology is fast, and capacity is big, and good stability can walk abreast, the real-time device that optical information is stored and handled.The Infrared Stimulated Luminescence material has desirable characteristics.Different with other optical memory material, this material wavelength X
1The light writing information, be λ with wavelength
2The near infrared light sense information, read output signal is the visible light with the third wavelength.Three-beam separates on frequency, does not disturb mutually; The read output signal of this optical memory is to writing light inlet and read the responding range that light has several magnitude, and can write fast with the laser of lower-wattage.[see United States Patent (USP): US 4806772 (HO5B33/); US 4812659 (HO5B33/00); The patent of asking among the US812660 (HO5B33/00) and the inventor, application number: 95111585.5 and 95111675.4].Above-mentioned patent provides the material or the single-layer element of different types of electron capture optical storage.
The purpose of this invention is to provide multilayer optical storage and information processing component that a kind of multi-wavelength writes; The element of this sandwich construction can write with multiple different wave length, reads with identical or different near infrared light, and output signal is the visible light of different colours.
The present invention utilizes the material of each layer to have the different characteristics that spectrum and transmitted spectrum distribute that write, can with a multi wave length illuminating source or more than two or tunable optical source, the filter action of while by inter-level dielectric comes writing information.Utilize the photochromic difference of each layer read output signal to come to separate and compare each layer information from spectrum; Utilization is read light intensity and is read with the selection that interlayer is carried out in burnt long variation.
The formation of multilayer optical memory element of the present invention is shown in Fig. 1-4.Wherein digital a
1, a
2... a
N, represent that the rete (it is thick to be generally 4-20 μ m) of different electron capture materials, N are number of plies N 〉=2 of element storage rete, and b
1, b
2... b
NBe its corresponding substrate, c and d are respectively necessary filter coating and diaphragm.So multilayer optical memory element of the present invention contains the storage rete a of N 〉=2 layer, promptly has: the first storage rete a
1, the second storage rete a
2... N storage rete a
NWith respect to each storage rete a one deck substrate b is arranged, therefore: N layer substrate b is arranged accordingly, promptly have: the first substrate b
1, the second substrate b
2... N substrate b
NSelect the rete a of the suitable electron capture material of performance
1, a
2... a
N, apply at substrate dielectric b
1, b
2... b
NOn, substrate b
1, b
2... b
NCan be certain media layer, or its another side is coated with the media film of narrow bandpass or to the optical medium layer of the reflectance coating of a certain wave band or media layer (b for example
1The ultraviolet reflectance film should reflect away all ultraviolet lights of λ＜300nm on the layer, because ultraviolet light all writes effect to the material of all the other each layers).
Available electron capture material and effectively write wavelength and the read output signal wavelength provides in table 1.
Table 1
| Sequence number | Material | Effectively write wavelength | Effectively read wavelength | The flashlight spectral limit |
| I | CaS(Ce，Sm) | ＜300nm# | 800-1600nm | 490-590nm |
| II | SrS(Cu，Sm) | 320-380nm | 750-1400nm | 470-570nm |
| III | SrS(Ce，Sm) | 410-460nm | 750-1400nm | 460-560nm |
| IV | Ca xSr 1-xS(Cu，Ce，Sm) | 320-460nm | 750-1400nm | 460-560nm |
| V | SrS(Eu，Sm) | 420-540nm | 750-1400nm | 580-650nm |
| VI | CaS(Eu，Sm) | 440-580nm | 800-1600nm | 610-670nm |
| VII | Ca xSr 1-xS(Eu，Ce，Sm) | 430-560nm | 800-1550nm | 600-660nm |
#. is to all five kinds of materials, and the ultraviolet light of wavelength X＜300nm all is effectively to write light inlet.
Above-mentioned material can be combined into the multilayer optical memory element by different series arrangement, and the principle of combination is as follows:
1. the light inlet of writing to certain one deck does not cause interference to other layer, that is to say that writing of each layer is only independent separately non-interfering, as to a
2The light inlet of writing of layer does not cause a
1And a
3The interference of layer;
The emission luminous energy of each layer from it each layer of face see through, as to a
2The emission light of layer can see through a that covers above it
1, b
1Layer etc.;
3. the distance of interlayer is suitably selected, and makes it to help each layer and writes clearly or read;
4. the order of suitable selection material reduces the interference of interlayer as much as possible;
The method for production of element of the present invention
1. utilize existing technology with various electron capture material film a
1, a
2... a
N, be made in substrate b
1, b
2... b
NOn, as b
1Can be not the media of saturating ultraviolet light or its another side be coated with the total reflection ultraviolet light (deielectric-coating of λ＜300nm), the thickness of substrate is between 0.5-2.0mm, material can be the aluminium oxide wafer, or piezoid, the organic thin slice of filter glass or hard;
2. successively glue together with clear binder (as polymer, organic resin etc.), or edge-glued, interlayer fills with index-matching fluid, is coated with at last with diaphragm or plastic packaging, shown in Fig. 1-4.
The use of element of the present invention is wide, as:
1. the spatial light modulator wiped in calculating as photometry, or logic switch;
2. be used for pattern recognition or content-addressed memory (CAM);
3. optical image and information recording device;
4. certain hardware of computing machine, etc.
The advantage of element of the present invention:
This element have various advantages that electron capture material brings as: access rate is fast, does not have thermal effect; Highly sensitive, suitable selection writes and reads light source, interrogates/makes an uproar than height, and read/write/wiping is convenient etc.;
2. because of the multilayer storage, further enlarged capacity;
3. because of parallel work-flow, further improved speed;
4. the use multi-wavelength increases control channel, etc.
Accompanying drawing:
Fig. 1. two layers of optical information are stored and the treatment element structural representation
Fig. 2. four layers of optical information are stored and the treatment element structural representation
Fig. 3. eight layers of optical information are stored and the treatment element structural representation
Fig. 4. multi-layer optical information storage and treatment element structural representation
Embodiment
Example 1: when N=2, select one not the medium of saturating ultraviolet light as substrate b
1, or be coated with rete c with light reflection ultraviolet, (Ce, Sm) rete is as layer a simultaneously to be coated with CaS at substrate then
1, another side be coated with material VI[CaS (Eu, Sm)] (or material V and VII) film is as layer a
2The surface is coated with diaphragm d or plastic packaging, promptly gets a kind of element of simple two-layer structure, as Fig. 1.
To this element, can select λ＜～ultraviolet light of 280nm is as layer a
1Write light inlet, because of substrate b
1Or the not saturating ultraviolet light of c, layer a
2Be not subjected to the interference of ultraviolet light; Any visible light between the selection 440-560nm is to layer a
2During writing information, do not influence a layer a equally
1
Can use any infrared light supply between the 850-1550nm when reading.Can adopt the mode of glancing incidence when successively reading or wiping; Read every layer information for pointwise, can utilize method of optics, the focal length by modulated infrared light reaches; Simultaneously, the signal spectrum difference of every layer of emission can utilize the method for CCD and filtering to handle respectively.
Example 2: when N=4
Do a four-layer device as shown in Figure 2.Layer a#-[1] be CaS (Ce, Sm), it writes the ultraviolet light that light inlet is λ＜280nm, select one not thoroughly the medium of ultraviolet light as substrate b
1Or be coated with rete c with light reflection ultraviolet, then the substrate another side be coated with material II[SrS (Cu, Sm)] film is as layer a
2, this layer select for use～and light between the 320-380nm writes; Layer a
3For material V[SrS (Eu, Sm)], the light of usefulness～470-490nm writes, the substrate b below it
3Select for use light to end the material that sees through, so that make the 4th layer of a to λ＜520nm
4Material VI[CaS (Eu, Sm)] film, be not subjected to the 3rd layer of a
3Write the influence of light inlet, and layer a
4Select the light writing information of 540-570nm.
Can use any infrared light supply between the 850-1550nm when reading.Can adopt the mode of glancing incidence when successively reading or wiping; Or with cylindrical mirror light beam is compiled in flakes, utilize waveguiding effect addressing successively from the side.Read every layer information for pointwise, can utilize method of optics, the focal length by modulated infrared light reaches.Simultaneously, the signal spectrum difference of every layer of emission, the arrangement of sequence helps seeing through of flashlight, can utilize CCD to separate each layer read output signal with the method for substrate filtering simultaneously.
Example 3: when N=8
Do eight layer elements as shown in Figure 3.Wherein the four-layer device with example 2 is first unit 1; Second unit 2 structure is: layer a
1 'Be material I, layer a
2 'Be material IV, layer a
3 'Be material VII, layer a
4 'Be material VI, principle is identical.Two unit a
4Layer and a
4 'Layer is by an infrared permeation medium b
4Be (F) gummed among the figure, symmetrical combines.Information can write and read from two directions like this.
Can use any infrared light supply between the 850-1550nm when reading.Can adopt the mode of glancing incidence when successively reading or wiping; Or with cylindrical mirror light beam is compiled in flakes, utilize waveguiding effect addressing successively from the side.Read every layer information for pointwise, can utilize method of optics, the focal length by modulated infrared light reaches.Simultaneously, the signal spectrum difference of every layer of emission can utilize the method for CCD and substrate filtering to handle respectively.
Example 4: when N＞8
Make a sandwich type element.Its middle level a
1-material I (writes wavelength X
w→ 280nm), layer a
2-material II (λ
w→ 320nm), layer a
3-material III (λ
w→ 420nm), layer a
4-material VI (λ
w→ 360nm), layer a
5-material VI (λ
w→ 480nm), layer a
6-material V (λ
w→ 450nm), layer a
7-material VI (λ
w→ 530nm), layer a
g-material V (λ
w→ 450nm), layer a
9-material VI (λ
w→ 530nm), layer a
10-material VII (λ
w→ 430nm) ... Deng.Substrate b
1Select saturating ultraviolet light (medium of λ＜300nm), substrate b for use
5Another side scribbles the deielectric-coating of reflected wavelength lambda～480nm.Surface plastic packaging and to useless light shield.The number of plies is subjected to rete to see through the restriction of reflecting with interface, need decide on actual conditions.
But perpendicular slice writes, and writes the focal length of light inlet by variation, must exempt from interlayer interference, also can be by rete to writing the absorption of light inlet, and draw back the distance between the same material rete, reduce the interference that writes of different layers.
Can select when reading～the light perpendicular slice of 800nm-1500nm changes focal length to a
1, a
2... a
NEach layer addressing, front each layer transmitting green light, back each layer red-emitting, back each layer emission energy sees through from each layer of front.Also can with cylindrical mirror light beam be compiled in flakes from the side, utilize waveguiding effect addressing successively.
Claims (5)
1. a multi-wavelength write multilayer light information is stored and treatment element; on substrate b, be covered with electron capture material as storage rete (a); have on the film surface filter coating (c) and diaphragm (d) to it is characterized in that containing the storage rete (a) of N 〉=2 layer in storage, promptly have: first stores rete (a
1), the second storage rete (a
2) ... N storage rete (a
N); With respect to each storage rete (a) one deck substrate (b) is arranged, therefore, N layer substrate (b) should be arranged mutually, promptly have: the first substrate (b
1), the second substrate (b
2) ... N substrate (b
N).
2. according to the optical information storage and the treatment element of claim 1, it is characterized in that constituting the electron capture material of storing rete (a) is SrS, or CaS, or Ca
xSr
1-xS, wherein S is Ce, or Sm, or Cu, or Eu.
3. according to the optical information storage and the treatment element of claim 1, it is characterized in that substrate (b) is the media layer, or single face is coated with optical medium layer or media layer with narrow bandpass media film or reflectance coating.
4. according to the optical information storage and the treatment element of claim 1 or 2 or 3, it is characterized in that the said first storage rete (a
1), the second storage rete (a
2) ... N storage rete (a
N) each layer write only independent, non-interfering separately.
5. according to the optical information storage and the treatment element of claim 1 or 2 or 3, it is characterized in that the said first storage rete (a
1), the second storage rete (a
2) ... N storage rete (a
N) the emission luminous energy of each layer see through topped each layer above it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95113370A CN1059285C (en) | 1995-12-26 | 1995-12-26 | Multi-wavelength write multilayer optical information storage and processing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95113370A CN1059285C (en) | 1995-12-26 | 1995-12-26 | Multi-wavelength write multilayer optical information storage and processing element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1131313A CN1131313A (en) | 1996-09-18 |
| CN1059285C true CN1059285C (en) | 2000-12-06 |
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ID=5079981
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95113370A Expired - Fee Related CN1059285C (en) | 1995-12-26 | 1995-12-26 | Multi-wavelength write multilayer optical information storage and processing element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1059285C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4629900A (en) * | 1984-02-02 | 1986-12-16 | Fuji Photo Film Co., Ltd. | Radiation image read-out method |
| EP0271977A2 (en) * | 1986-12-19 | 1988-06-22 | Koninklijke Philips Electronics N.V. | Erasable optical data storage medium having an embedded servotrack and a subsurface recording interface |
| US4788434A (en) * | 1983-10-24 | 1988-11-29 | Fuji Photo Film Co., Ltd. | Radiation image recording and reproducing method |
-
1995
- 1995-12-26 CN CN95113370A patent/CN1059285C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4788434A (en) * | 1983-10-24 | 1988-11-29 | Fuji Photo Film Co., Ltd. | Radiation image recording and reproducing method |
| US4629900A (en) * | 1984-02-02 | 1986-12-16 | Fuji Photo Film Co., Ltd. | Radiation image read-out method |
| EP0271977A2 (en) * | 1986-12-19 | 1988-06-22 | Koninklijke Philips Electronics N.V. | Erasable optical data storage medium having an embedded servotrack and a subsurface recording interface |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1131313A (en) | 1996-09-18 |
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