CN105924015B - A kind of frit of low melting point and silver paste prepared therefrom - Google Patents
A kind of frit of low melting point and silver paste prepared therefrom Download PDFInfo
- Publication number
- CN105924015B CN105924015B CN201610476199.4A CN201610476199A CN105924015B CN 105924015 B CN105924015 B CN 105924015B CN 201610476199 A CN201610476199 A CN 201610476199A CN 105924015 B CN105924015 B CN 105924015B
- Authority
- CN
- China
- Prior art keywords
- frit
- melting point
- low melting
- silver paste
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 32
- 239000004332 silver Substances 0.000 title claims abstract description 32
- 238000002844 melting Methods 0.000 title claims abstract description 15
- 230000008018 melting Effects 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 5
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000010791 quenching Methods 0.000 claims description 9
- 230000000171 quenching effect Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 7
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- 239000012074 organic phase Substances 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000011812 mixed powder Substances 0.000 claims 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 abstract description 6
- 229910000272 alkali metal oxide Inorganic materials 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 15
- 239000003795 chemical substances by application Substances 0.000 description 13
- 239000005308 flint glass Substances 0.000 description 13
- 238000003466 welding Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 alkali metal oxygen Compound Chemical class 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000005587 carbonate group Chemical group 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of frit of low melting point and silver pastes prepared therefrom.Frit of the invention, including following component: 30~60wt%SnO, 8~25wt%PbO or PbO and Bi2O3、TeO2Any mixture, 10~20wt%B in the two2O3Or B2O3With SiO2Mixture, 5~10wt%P2O5, the one or more alkaline earth oxides of 1~10wt%ZnO, 0~5wt%, the one or more alkali metal oxides of 0~5wt%, 0~5wt%AuCl2.The frit can be used for preparing crystal silicon solar batteries N-type emitter silver paste, improve contact resistance and electrode pulling force between silver electrode and silicon emitter.
Description
Technical field
The present invention relates to crystal silicon solar batteries fields, and in particular to a kind of crystal silicon solar batteries N-type emitter silver
The frit of slurry.
Background technique
Current commercialized crystal silicon solar batteries unorganic glass phase system used by front side silver paste is mainly two big
Class, the first kind are Pb/Bi-B-Si system；Second class is Te-Pb/Bi-B-Si system.With crystal silicon solar batteries efficiency with
And the demand that reliability is promoted is more more and more intense, the diffused sheet resistance of silicon wafer is further promoted, and PN junction is from depth to shallow.And silicon wafer technique
On variation just to the silver-colored silicon contact performance of front side silver paste, more stringent requirements are proposed.And the silver-colored silicon contact performance of slurry mainly by
Used glass system determines.The first kind glass system of mainstream, the electrical property for being unable to satisfy high square resistance silicon wafer are wanted at present
It asks；Although and the second glass-like body system can be effectively improved the contact electrical property of the silver-colored silicon on high square resistance silicon wafer, but facing can
By property problem, silver electrode grid line pulling force prepared by the front side silver paste using the second glass-like body system is relatively low.
Summary of the invention
The present invention provide a kind of low melting point frit and silver paste prepared therefrom, to improve between silver electrode and silicon wafer
Contact resistance, while guaranteeing the welding pulling force between silver electrode and silicon wafer.
Firstly, the present invention provides a kind of new frit system, which can be used for preparing crystal silicon solar batteries N-type
Emitter silver paste, the contact performance that can have been obtained on high diffusivity sheet resistance silicon wafer, while can guarantee silver electrode and silicon transmitting
Pulling force between pole.A kind of frit of low melting point provided by the invention comprising following component: 30~60wt%SnO, 8~
25wt%PbO or PbO and Bi2O3、TeO2Any mixture, 10~20wt%B in the two2O3Or B2O3With SiO2Mixture,
5~10wt%P2O5, the one or more alkaline earth oxides of 1~10wt%ZnO, 0~5wt%, 0~5wt% is one or more
Alkali metal oxide, 0~5wt%AuCl2.Frit provided by the invention is Sn-Pb-P-Zn oxide system, the frit
With low TgTemperature and Tf temperature, high temperature viscosity is low, is applied to N-type emitter silver paste, during the sintering process can be with
Fast liquefying flowing forms large area to silicon nitride and effectively corrodes, forms bigger silver-colored silicon contact area, is conducive to improve connecing
Electric shock resistance；The frit system has good compatibility to silver simultaneously, can infiltrate and react well in silver surface；Equally should
Frit also has preferable compatibility to electrode welding, can promote the pulling force of gate electrode line and silicon wafer.
Another innovative point of the invention is that joined AuCl in frit system2.The present invention is added in frit
AuCl2, the AuCl in practical application2It can be precipitated in glassy layer in the form of nano Au particle, the general of tunnel-effect can be increased
Rate, to be effectively improved contact resistance.
Preferably, one or more alkaline earth oxides are the mixed of MgO or MgO and other alkaline earth oxides
Close object.
Preferably, one or more alkali metal oxides are Li2O or Li2The mixing of O and otheralkali metal oxide
Object.
Further, the frit of the low melting point includes following component: 35~55wt%SnO, 8~25wt%PbO or
PbO and Bi2O3、TeO2Any mixture, 10~12wt%B in the two2O3Or B2O3With SiO2Mixture, 5~8wt%
P2O5, the mixture of 5~8wt%ZnO, 2~5wt%MgO or MgO and CaO, 2~5wt%Li2O or Li2O and K2The mixture of O,
1~5wt%AuCl2。
Specifically, each raw material of the frit of the low melting point can be oxide or carbonate.
Specifically, the frit is prepared using high-temperature fusion quenching method or is prepared using sol-gal process.
Frit performance in all technical solutions provided by the present invention is able to satisfy the contact requirement of high square resistance silicon wafer.
Secondly, being used to prepare crystal silicon solar batteries N-type emitter the present invention also provides a kind of silver paste, it is formulated as follows:
Silver powder 85~90wt%, any of the above-described 2~4wt% of frit, organic phase: 6~12wt%.
It is furthermore specific as follows the present invention also provides the preparation method of above-mentioned silver paste: first to premix silver powder and glass powder
It closes, conventional powder mixing apparatus, such as V-type or three-dimensional material mixer can be used；Powder is added in organic phase simultaneously again
It is stirred, stirs and blender can be used to carry out, after being stirred 1~2 hour with blender, by the raw material being stirred on three-roller
Further dispersion homogenizing, after Hegman fineness grind is less than 10um, silver paste preparation is completed.The silver paste that preparation is completed can be used for carrying out next
The performance test of step.
Compared with prior art, beneficial effects of the present invention are as follows:
Glass material formula provided by the invention can be used for preparing the front side silver paste for being suitable for high square resistance crystal silicon solar battery, make
Silver paste obtains excellent electrical property and welding pulling force.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Specific embodiment
The present invention provide a kind of low melting point glass material formula and silver paste prepared therefrom.The frit can be used for preparing crystalline substance
Silicon solar cell N-type emitter silver paste, to improve the contact resistance and electrode pulling force between silver electrode and silicon emitter.This
The frit of the low melting point provided, including following component: 30~60wt%SnO, 8~25wt%PbO or PbO and Bi are provided2O3、
TeO2Any mixture, 10~20wt%B in the two2O3Or B2O3With SiO2Mixture, 5~10wt%P2O5, 1~
The one or more alkaline earth oxides of 10wt%ZnO, 0~5wt%, the one or more alkali metal oxides of 0~5wt%, 0~
5wt%AuCl2.It is further preferred that the AuCl2It is 1~5%.The above-mentioned various raw materials of frit in the present invention, can be with
Using oxide, carbonate form can also be used, and is converted according to oxide content in carbonate.One or more alkali
Soil metal oxide is preferably the mixture of MgO or MgO Yu other alkaline earth oxides.One or more alkali metal oxygen
Compound is preferably Li2O or Li2O and otheralkali metal hopcalite.
The preparation method of above-mentioned frit provided by the invention: can be prepared using conventional high-temperature fusion quenching method,
Collosol and gel and other preparation methods can be used.
Such as high-temperature fusion quenching method is as follows: weighing raw material according to formula, raw material can be oxide or carbonate；
Using double roller or three-dimensional mixer mixing homogenizing after, be transferred in alumina crucible be melted, glass melting temperature range be 1100~
1300 DEG C, melting time is 30~80min, is stirred in melting process, is further homogenized；After being melted, directly glass is melted
Body quenching can use deionized water quenching or iron plate quenching；Frit obtained uses planetary ball mill ball milling again, to
Powder granularity D50 is less than 10um, more excellent for less than drying after 5um.
Herein, the range indicated by " numerical value to another numerical value ", is that one kind avoids enumerating in the description
The summary representation of all numerical value in the range.Therefore, the record of a certain special value range, covers the numberical range
Interior any number and the relatively fractional value range defined by any number in the numberical range, as bright in the description
Text writes out any number as should be compared with fractional value range.
Present invention will be further explained below with reference to specific examples.It should be understood that these embodiments are merely to illustrate this hair
It is bright, rather than limit the scope of protection of the present invention.The improvement and tune that technical staff makes according to the present invention in practical applications
It is whole, still fall within protection scope of the present invention.
Embodiment
The frit of the present embodiment the preparation method is as follows:
Ingredient is carried out according to the glass proportion in the following table 1, is formulated using mass percent；Existed using Muffle furnace
1h is melted sufficiently after homogenizing to glass raw material under the conditions of 1300 DEG C and carries out the quenching technique of glass using water quenching；Glass uses
Planetary ball mill carries out ball milling to obtain the powdered glass material of appropriate particle size.Particle diameter distribution D50≤5 μm of resulting frit.
Table 1
The preparation embodiment and comparative example of silver paste:
Embodiment 1
By 87wt% conductive silver powder, the A-1 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-1.
Embodiment 2
By 87wt% conductive silver powder, the A-2 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-2.
Embodiment 3
By 87wt% conductive silver powder, the A-3 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-3.
Embodiment 4
By 87wt% conductive silver powder, the A-4 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-4.
Embodiment 5
By 87wt% conductive silver powder, the A-5 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-5.
Embodiment 6
By 87wt% conductive silver powder, the A-6 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-6.
Embodiment 7
By 87wt% conductive silver powder, the A-7 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-7.
Embodiment 8
By 87wt% conductive silver powder, the A-8 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-8.
Embodiment 9
By 87wt% conductive silver powder, the A-9 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, and is used
Three-roll grinder grinds slurry, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.System
The slurry obtained is named as PA-9.
Embodiment 10
By 87wt% conductive silver powder, the A-10 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, is made
Slurry is ground with three-roll grinder, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.
Slurry obtained is named as PA-10.
Embodiment 11
By 87wt% conductive silver powder, the A-11 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed,
Slurry is ground using three-roll grinder, tests fineness of grind using Hegman fineness grind agent, slurry grinding is thin
Degree is at 10 μm or less.Slurry obtained is named as PA-11.
Comparative example 1
By 87wt% conductive silver powder, the BL-1 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, is made
Slurry is ground with three-roll grinder, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.
Slurry obtained is named as PB-1.
Comparative example 2
By 87wt% conductive silver powder, the BL-2 flint glass F material of 2wt%, the organic media of 11wt% is sufficiently mixed, is made
Slurry is ground with three-roll grinder, tests fineness of grind using Hegman fineness grind agent, slurry fineness of grind is at 10 μm or less.
Slurry obtained is named as PB-2.
Silver-colored silicon contact resistance and adhesion test method are as follows:
1) 13 kinds of slurries obtained above are printed onto the high square resistance of plated film making herbs into wool using Bacinni screen process press respectively
On polysilicon chip front, the sheet resistance of silicon wafer is 100 Ω/.Every kind of slurry prints 8, and 4 are tested for contact resistance, 4 with
In tensile test.It is sintered using DESPATCH sintering furnace.
2) 4 cell pieces for testing contact resistance are cut into wide 2cm, long 8cm along main grid side using laser cutting machine
Strip.Contact resistance is tested with TLM test macro.
3) 60/ lead of the tin of 0.25mm*1.1mm, 40 welding is welded to 4 cell piece main grids for being used to test pulling force, is welded
Jointing temp is respectively set as 340 DEG C.Welding impregnates 10min using scaling powder before welding.Use 180 ° of automatic puller system reversed drawings
Pull out welding, testing size adhesive force.
Silver-colored silicon contact resistance and adhesive force test result see the table below 2.
Table 2
As seen from Table 2, PA-1, PA-2, PA-3, PA-5, PA-6, PA-7, PA-8, PA-9, PA-10, PA-11 can be obtained
Contact resistance performance identical with commercial tellurate PB-2 glass system is obtained, but the latter, explanation will be significantly greater than by welding pulling force
Frit system of the invention and the silver paste thus prepared are on the basis of guaranteeing contact performance, relative to current tellurate glass
System can improve the problem of pulling force deficiency.And it is not added with AuCl2PA-4 sample contact resistance value relative to PA-1, PA-
2, PA-3 have certain increase, illustrate AuCl2Positive effect is played in terms of improving contact performance.It can see simultaneously
The contact resistance of PB-1 is very big, illustrates that commercial lead borosilicate system is difficult to adapt to the silicon wafer of high square resistance.PA-1, PA-2, PA-3,
The above results of PA-5~PA-11 show the formula in scope of design of the present invention, can reach purpose of design of the invention,
Pulling force and the contact resistance performance obtained.
Under the teaching of the present invention and the above embodiments, those skilled in the art are easy to it is envisioned that cited by the present invention
Or each raw material enumerated or its equivalent alterations, each processing method or its equivalent alterations can realize the present invention and each original
The parameter bound value of material and processing method, interval value can realize the present invention, embodiment numerous to list herein.
Claims (5)
1. a kind of frit of low melting point, which is characterized in that including following component: 35 ~ 55wt%SnO, 8 ~ 25wt%PbO or PbO
With Bi2O3、TeO2Any mixture, 10 ~ 12wt%B in the two2O3Or B2O3With SiO2Mixture, 5 ~ 8wt%P2O5, 5 ~
8wt%ZnO, the mixture of 2 ~ 5 wt% MgO or MgO and CaO, 2 ~ 5 wt%Li2O or Li2O and K2The mixture of O, 1 ~ 5 wt%
AuCl2。
2. the frit of low melting point as described in claim 1, which is characterized in that each component of the frit of the low melting point
Raw material is oxide or carbonate.
3. the frit of low melting point as described in claim 1, which is characterized in that the frit uses high-temperature fusion quenching method
Preparation is prepared using sol-gal process.
4. a kind of silver paste is used to prepare crystal silicon solar batteries N-type emitter, which is characterized in that formula is as follows: silver powder 85 ~
90wt%, 2 ~ 4wt% of frit as claimed in any one of claims 1-3, organic phase: 6 ~ 12wt%.
5. a kind of preparation method of silver paste as claimed in claim 4, which is characterized in that silver powder and frit are pre-mixed first,
Mixed powder is added in organic phase while being stirred again；After stirring 1 ~ 2 hour, by the raw material being stirred in three-roller
Upper further dispersion homogenizing, after Hegman fineness grind is less than 10 μm, the preparation of silver paste is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610476199.4A CN105924015B (en) | 2016-06-24 | 2016-06-24 | A kind of frit of low melting point and silver paste prepared therefrom |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610476199.4A CN105924015B (en) | 2016-06-24 | 2016-06-24 | A kind of frit of low melting point and silver paste prepared therefrom |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105924015A CN105924015A (en) | 2016-09-07 |
| CN105924015B true CN105924015B (en) | 2019-02-19 |
Family
ID=56828346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610476199.4A Active CN105924015B (en) | 2016-06-24 | 2016-06-24 | A kind of frit of low melting point and silver paste prepared therefrom |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105924015B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107759093B (en) * | 2017-10-23 | 2020-05-22 | 常州聚和新材料股份有限公司 | Glass material for high sheet resistance shallow crystalline silicon solar cell, preparation method thereof and slurry |
| CN110395905B (en) * | 2019-08-29 | 2021-08-13 | 北京北旭电子材料有限公司 | Composition for manufacturing glass, sealing material and preparation method thereof, glass and manufacturing method thereof |
| CN112542520B (en) * | 2020-12-31 | 2022-08-05 | 三江学院 | Preparation method of composite film structure for improving metal contact of contact passivation solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4425386B2 (en) * | 1999-10-06 | 2010-03-03 | 株式会社オハラ | Low melting point glass and sealing composition |
| CN103515459A (en) * | 2012-06-26 | 2014-01-15 | 株式会社则武 | Paste composition for solar battery electrode |
| CN104751935A (en) * | 2013-12-26 | 2015-07-01 | 湖南利德电子浆料有限公司 | High-sheet-resistance efficient solar cell front silver paste and preparation method thereof |
-
2016
- 2016-06-24 CN CN201610476199.4A patent/CN105924015B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4425386B2 (en) * | 1999-10-06 | 2010-03-03 | 株式会社オハラ | Low melting point glass and sealing composition |
| CN103515459A (en) * | 2012-06-26 | 2014-01-15 | 株式会社则武 | Paste composition for solar battery electrode |
| CN104751935A (en) * | 2013-12-26 | 2015-07-01 | 湖南利德电子浆料有限公司 | High-sheet-resistance efficient solar cell front silver paste and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105924015A (en) | 2016-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101425545B (en) | Environment protection type silicon solar cell back electric field aluminum pulp and producing method thereof | |
| CN101630695B (en) | Lead-free cadmium-free electrode slurry for crystalline silicon solar battery and preparation method thereof | |
| CN101271928B (en) | Method for producing high-viscosity solar cell front side silver paste and the same | |
| CN102126829B (en) | Lead-free glass powder, preparation method thereof, silver paste containing glass powder and crystal silicon solar cell manufactured by using silver paste | |
| CN104979035B (en) | Lead-free composite glass adhesive solar battery positive silver paste | |
| CN102768871A (en) | Composition of lead-free silver electrocondution slurry used for forming crystal silicon solar cell back electrode as well as preparation method thereof | |
| CN102324263A (en) | Silver paste for solar cells and preparation method thereof | |
| CN104599741A (en) | Positive silver electrode slurry for silicon solar cell with high sheet resistance | |
| CN104751942A (en) | Lead-free conductive paste for filament screen printing of solar cells and preparation method of lead-free conductive paste | |
| CN105924015B (en) | A kind of frit of low melting point and silver paste prepared therefrom | |
| CN102354544A (en) | Silver conductive paste for front electrode of crystalline silicon solar cell and preparation method thereof | |
| CN105118578B (en) | The preparation technology of unleaded front electrode silver slurry used for solar batteries | |
| CN102603196A (en) | Glass mixing powder, preparation method thereof and conductive silver paste containing glass mixing powder | |
| WO2016169512A1 (en) | Glass frit, preparation method therefor and electrode paste containing glass frit | |
| CN102354545A (en) | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof | |
| CN104751935A (en) | High-sheet-resistance efficient solar cell front silver paste and preparation method thereof | |
| CN110590168A (en) | Glass material for crystalline silicon solar cell, preparation method thereof and silver paste | |
| CN106653147B (en) | A kind of silicon solar cell unleaded front side silver paste and preparation method thereof | |
| CN103177789B (en) | A kind of crystal-silicon solar cell electrocondution slurry and preparation method thereof | |
| CN114315159A (en) | Glass powder for TOPCon battery main gate electrode silver paste and preparation method and application thereof | |
| CN109785994A (en) | A kind of PERC battery backplane slurry and preparation method thereof | |
| CN107759093B (en) | Glass material for high sheet resistance shallow crystalline silicon solar cell, preparation method thereof and slurry | |
| CN108538440A (en) | The compound silver electrode paste of solar cell and preparation method of silver-colored coated graphite alkene | |
| CN108766617A (en) | The front electrode silver slurry and preparation method thereof of highly conductive low-shrinkage used for solar batteries | |
| JP2014084249A (en) | Glass frit for forming electrode, electroconductive paste for forming electrode, and solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |