CN1059039A - Large-area ultraviolet is carved (exposure) method and device thereof - Google Patents
Large-area ultraviolet is carved (exposure) method and device thereof Download PDFInfo
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- CN1059039A CN1059039A CN 90107038 CN90107038A CN1059039A CN 1059039 A CN1059039 A CN 1059039A CN 90107038 CN90107038 CN 90107038 CN 90107038 A CN90107038 A CN 90107038A CN 1059039 A CN1059039 A CN 1059039A
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Abstract
The present invention relates to the method and the device thereof of the even irradiation photoetching of a kind of contact/proximity large tracts of land ultraviolet (exposure), adopted the even number optical channel optical integrator that the unevenness of exposure that produces in irradiation face internal irradiation unevenness and the exposure process can be compensated mutually, the condenser of combined type high order aspheric surface and packaged type Exposure mode, make and when increasing effective area of irradiation, improved the exposure uniformity coefficient, be LCD, particularly the development of the Primary Component active matrix liquid crystal display in the liquid crystal tv technology provides effective means, and it also is applicable to aspects such as the making of large scale integrated circuit and accurate printed circuit board (PCB) and the simulated experiment of solar ultraviolet irradiation.
Description
The present invention relates to the technical improvement method of a kind of ultraviolet photolithographic (exposure) machine, especially for the method for the even irradiation photoetching of contact/proximity large tracts of land ultraviolet (exposure) and realize the device of this method.
Effectively evenly irradiated area is two important technology indexs of ultraviolet photolithographic (exposure) machine with the exposure uniformity coefficient.Existing ultraviolet photolithographic (exposure) machine is because of its purposes difference, or exposure resolution ratio high and its effectively evenly irradiated area is less, its homalographic square catercorner length is generally within 6 inch; Or bigger irradiated area is arranged and its exposure uniformity coefficient very poor, its unevenness of exposure 〉=± 10%.The PLA-501 type that the litho machine of JKG type φ 75 litho machines of producing such as Shanghai optical-mechanical factory, the 100mm * 100mm of Inst. No. 13, Ministry of Machine Building and Electronic Industry's development, Japanese Cannon company produce is approaching/litho machine of 100mm * 100mm that contact photoetching machine and West Germany Carl Suss company produce.
The general structure of the main frame of ultraviolet photolithographic machine (light source) system is made up of condenser 1, light source 2, optical filter 3, optical integrator 4, exposure shutter 5 and collimation lens 6 as shown in Figure 1.The radiation flux that light source 2 sends is after condenser 1 is assembled, in irradiation profile of incident end formation of optical integrator 4.The live part of this irradiation profile in optical integrator 4 each optical channel combination clear aperture arranged side by side cut apart through each optical channel arranged side by side, and symmetrical stacking image forms an equally distributed effective irradiation face of irradiance.This effective irradiation face is on collimation lens 6 projection imagings are exposing substrate 7.The exit end of optical integrator 4 is positioned on the focal plane of collimation lens 6, and collimation lens 6 projections go out to have the collimated light beam of specific angle of collimation.In a word, existing ultraviolet photolithographic (exposure) machine all can not satisfy simultaneously effectively evenly irradiated area big with the high technical requirement of uniformity coefficient that exposes, so needs that are difficult to adapt to the photoetching of the active driving array liquid crystal display of large tracts of land etc.
The objective of the invention is with effective area of irradiation big with the exposure uniformity coefficient high both be unified in one.Seek a kind ofly when increasing effective area of irradiation, improve the method and the approach of exposure uniformity coefficient, and propose that a kind of effective area of irradiation is big, exposure uniformity coefficient height, simple and practical ultraviolet photolithographic (exposure) install.
The present invention is based on when increasing effective area of irradiation, improving the exposure uniformity coefficient is preceding topic, because the resultant effect of the exposure inequality degree that irradiation nonuniformity that the unevenness of exposure of substrate is an irradiation face internal irradiation degree to distribute and exposure process produce, so in the gamut of exposure substrate, improve the irradiation uniformity coefficient in the effective irradiation face, and make irradiation nonuniformity become inverse change with unevenness of exposure, realize the compensation of the two.Secondly, improve the relevant elements of existing ultraviolet photolithographic (exposure) machine, effective radiation flux in the further increase system and raising are to the utilization factor of radiation flux.The present invention adopts the optical integrator of even number optical channel, and its number should be complementary with the irradiation profile that condenser forms, in order to improve the irradiation uniformity coefficient in the effective irradiation face and to realize irradiation nonuniformity and the compensation of the unevenness of exposure that exposure process produces.No matter which kind of shape each optical channel element lens bore arranged side by side of optical integrator is, the shape of their combination clear aperture, all the shape of the irradiation profile that forms with condenser is identical, to increase the utilization factor of optical integrator to radiation flux to greatest extent.At light source is under pointolite or approximate pointolite (for example spherical mercury xenon lamp) situation, and optical integrator combination clear aperture adopts foursquare form.Adopt high order aspheric surface or compound high order aspheric surface condenser, more effectively the radiation flux of convergent light source and form one with the relevant irradiation profile of optical integrator combination clear aperture size, be used for improving the convergence efficient of condenser, and guarantee the optical integrator clear aperture utilization factor higher radiation flux to the radiation of light source flux.For further increasing effective photoetching (exposure) area, adopt portable photoetching (exposure) method of exposure substrate, to increase the exposed dimension of exposure substrate on moving direction, promptly increase effective exposure area.
A concrete design that realizes this method invention is that large-area ultraviolet is carved (exposure) device, as shown in Figure 2, form by the removable worktable 7 of condenser 1, light source 2, optical filter 3, optical integrator 4, exposure shutter 5, collimation lens 6 and placement exposure substrate.The incident end of optical integrator 4 is positioned on second reference surface of condenser 1, its exit end is positioned on the focal plane of collimation lens 6, condenser 1 is that face shape is the high-effective concentration mirror of high order aspheric surface or compound high order aspheric surface, with the radiation flux of abundant convergent light source, and can form a desirable irradiance distribution.Light source 2 is high-power spherical ultraviolet mercury xenon lamps.The long-pending device 4 of optics is complementary by the irradiation profile that the even number optical channel is formed, its number and condenser form and clear aperture is foursquare optical integrator.Collimation lens 6 is thin type Fresnel Lenses, both can improve resembling matter, can increase the effective area of irradiation of total system again, also can alleviate its weight simultaneously.
An exemplary embodiments of the present invention is y by face shape as shown in Figure 2
2=193.5484x-0.13767x
2+ 34 * 10
-7x
31,2 kilowatts of near ultraviolet spherical mercury xenon lamps 2 of single high order aspheric surface condenser, saturating 3,12 passages of near ultraviolet optical filter and combination clear aperture be that the optical integrator 4, exposure shutter 5, the thin type Fresnel Lenses 6 of optical plastic, worktable 7 and two folding level crossings 8,9 that the exposure pedestal is moved back and forth of 84mm * 84mm formed.Folding level crossing 8 places between near ultraviolet mercury lamp 2 and the optical filter 3, and folding level crossing 9 places between exposure shutter 5 and the Fresnel Lenses 6, with compact complete machine structure.
The present invention's handle increases ultraviolet photolithographic (exposure) machine effective area of irradiation, both are unified in one to improve the exposure uniformity coefficient, adopted the high-effective concentration mirror and can compensate the optical integrator that the uneven even number optical channel of exposure that shutter causes is formed in exposure process, particularly adopted portable Exposure mode, the even irradiation photoetching of large tracts of land ultraviolet (exposure) is achieved.Make effective irradiation face homalographic square diagonal line can reach 21 inch, unevenness of exposure≤± 3%.During it not only can be used for, the each multi-disc of large scale integrated circuit of low exposure resolution ratio and photoetching (exposure) making of accurate printed circuit board (PCB), be specially adapted to large tracts of land and require the higher photoelectric display device of exposure resolution ratio, as the photoetching of LCD etc.; It provides effective means for the research and the production of the active driving matrix type LCD of the Primary Component in the liquid crystal tv technology, and it also is applicable to the uv-exposure or the irradiation systems such as simulated experiment of some device performance influence in solar ultraviolet photoirradiation space technology and the Application of Solar Energy simultaneously.
Claims (5)
1, large-area ultraviolet is carved (exposure) method, it is characterized in that in the gamut of exposure substrate, make irradiation nonuniformity become inverse change with unevenness of exposure, realize the compensation of the two, promptly adopt the optical integrator of even number optical channel, its number should be complementary with the irradiation profile that condenser forms, no matter and each optical channel element lens bore arranged side by side be which kind of shape, the shape of its combination clear aperture, the shape of the irradiation profile that should form with condenser is identical or similar.
2, large-area ultraviolet according to claim 1 is carved (exposure) method, it is characterized in that adopting high order aspheric surface that can form the irradiation profile relevant with optical integrator combination clear aperture size or the emittance that the abundant convergent light source of compound high order aspheric surface condenser sends.
3, large-area ultraviolet is carved (exposure) device, form by condenser 1, light source 2, optical filter 3, optical integrator 4, exposure shutter 5 and collimating mirror 6, the incident end of optical integrator 4 is positioned on second reference surface of condenser 1, exit end is positioned on the focal plane of collimation lens 6, the even number that the optical channel number that it is characterized in that optical integrator 4 is complementary for the irradiation profile that forms with condenser, its combination clear aperture preferably adopts square.
4, large-area ultraviolet according to claim 3 is carved (exposure) device, it is characterized in that the face shape of condenser 1 is adopted compound high order aspheric surface, and light source 2 adopts high-power spherical ultraviolet mercury xenon lamp.
5, carve (exposure) device according to claim 3 or 4 described large-area ultraviolets, it is characterized in that collimation lens 6 is thin type Fresnel Lenses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 90107038 CN1059039A (en) | 1990-08-15 | 1990-08-15 | Large-area ultraviolet is carved (exposure) method and device thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 90107038 CN1059039A (en) | 1990-08-15 | 1990-08-15 | Large-area ultraviolet is carved (exposure) method and device thereof |
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| Publication Number | Publication Date |
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| CN1059039A true CN1059039A (en) | 1992-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 90107038 Pending CN1059039A (en) | 1990-08-15 | 1990-08-15 | Large-area ultraviolet is carved (exposure) method and device thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100451840C (en) * | 2006-04-04 | 2009-01-14 | 吉林大学 | Method for constructing micrometre, submicrometre structural surface |
| CN1774675B (en) * | 2003-04-17 | 2010-10-20 | 卡尔蔡司Smt股份公司 | Optical element for a lighting system |
| CN102338323A (en) * | 2010-07-21 | 2012-02-01 | 上海太阳能工程技术研究中心有限公司 | Steady state solar simulator |
| CN111442726A (en) * | 2020-02-28 | 2020-07-24 | 南京南瑞水利水电科技有限公司 | Photoelectric displacement device based on Fresnel lens |
-
1990
- 1990-08-15 CN CN 90107038 patent/CN1059039A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1774675B (en) * | 2003-04-17 | 2010-10-20 | 卡尔蔡司Smt股份公司 | Optical element for a lighting system |
| CN100451840C (en) * | 2006-04-04 | 2009-01-14 | 吉林大学 | Method for constructing micrometre, submicrometre structural surface |
| CN102338323A (en) * | 2010-07-21 | 2012-02-01 | 上海太阳能工程技术研究中心有限公司 | Steady state solar simulator |
| CN111442726A (en) * | 2020-02-28 | 2020-07-24 | 南京南瑞水利水电科技有限公司 | Photoelectric displacement device based on Fresnel lens |
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