CN105895716A - Solar cell material with high energy conversion rate and preparation method thereof - Google Patents
Solar cell material with high energy conversion rate and preparation method thereof Download PDFInfo
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- CN105895716A CN105895716A CN201610466795.4A CN201610466795A CN105895716A CN 105895716 A CN105895716 A CN 105895716A CN 201610466795 A CN201610466795 A CN 201610466795A CN 105895716 A CN105895716 A CN 105895716A
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- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 28
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 12
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 12
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000001354 calcination Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000006641 stabilisation Effects 0.000 claims description 6
- 238000011105 stabilization Methods 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000005751 Copper oxide Substances 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 5
- YOBAEOGBNPPUQV-UHFFFAOYSA-N iron;trihydrate Chemical compound O.O.O.[Fe].[Fe] YOBAEOGBNPPUQV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- IJRVLVIFMRWJRQ-UHFFFAOYSA-N nitric acid zinc Chemical compound [Zn].O[N+]([O-])=O IJRVLVIFMRWJRQ-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a solar cell material with high energy conversion rate and a preparation method thereof. The solar cell material comprises the following raw materials by weight: 45-52 parts of silicon dioxide, 0.9-1.2 parts of phosphorus pentoxide, 0.2-0.6 part of antimony trioxide, 1.3-1.8 parts of diboron trioxide, 2-5 parts of metal oxide with variable valence, 8-13 parts of butyl titanate, 0.9-1.4 parts of zinc nitrate and 25-30 parts of absolute ethyl alcohol. The preparation method of the solar cell material comprises the following steps of mixing the raw materials such as the silicon dioxide, rising a temperature, and then immersing the raw materials in seed crystal; adjusting a rising speed and the temperature to obtain a silicon wafer; and coating, roasting and cooling the silicon wafer to obtain the solar cell material. The solar cell material and the preparation method thereof are easy to implement, the utilization rate of sunlight can be improved, the energy conversion rate is improved, and the solar cell material and the preparation method thereof have wide application prospects.
Description
Technical field
The present invention relates to solar cell material preparing technical field, be specifically related to a kind of high-energy
Conversion ratio solar cell material and preparation method thereof.
Background technology
Solar energy refers to the infrared radiant energy of the sun, and main performance is exactly the sunray often said.?
In the case of Fossil fuel reduces increasingly, solar energy has become the mankind and has used the important composition of the energy
Part, and be constantly developed.The utilization of solar energy has photothermal deformation and two kinds of sides of opto-electronic conversion
Formula, solar electrical energy generation is a kind of emerging regenerative resource.Also it is that one takes it for current
The most nexhaustible energy source.
In general, in sunlight in the highest flight for ultraviolet light, visible ray and infrared light.
The wave-length coverage that existing major part solar cell material can absorb sunlight is narrower, result in
It is less to the utilization rate of light, and the electron-hole concentration that material body produces after illumination is not high enough,
Stability is strong, after electrode two ends form internal electric field electronics and hole during migrating relatively
For easily compound, thus weaken this photovoltaic effect further so that material to luminous energy to
Electric energy shows low energy conversion efficiency during converting.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of high energy conversion rate solar-electricity
Pond material and preparation method thereof.
For achieving the above object, the present invention is achieved through the following technical solutions:
A kind of high energy conversion rate solaode panel material, is made up of the raw material of following weight portion:
Silicon dioxide 45-52 part, phosphorus pentoxide 0.9-1.2 part, antimony oxide 0.2-0.6 part, three
Aoxidize two boron 1.3-1.8 parts, variable valency metal oxide 2-5 part, butyl titanate 8-13 part, nitric acid
Zinc 0.9-1.4 part, dehydrated alcohol 25-30 part.
Preferably, it is made up of the raw material of following weight portion: silicon dioxide 49 parts, phosphorus pentoxide
1 part, antimony oxide 0.3 part, diboron trioxide 1.7 parts, variable valency metal oxide 3 parts,
Butyl titanate 12 parts, zinc nitrate 1.1 parts, dehydrated alcohol 28 parts.
Preferably, described variable valency metal oxide is iron sesquioxide, copper oxide and manganese dioxide
In one or more.
Preparation process is as follows:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 50-70 minute
Obtain solution E；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is calcined and is incubated, cool to room temperature with the furnace.
Preferably, described step 5) in butyl titanate instill process and carry out with stirring simultaneously, stir
Time is 60 minutes.
Preferably, described step 7) in calcining heat be 430 DEG C, temperature retention time is 30 minutes.
The invention provides a kind of high energy conversion rate solar cell material and preparation method thereof,
It provides the benefit that: feed components Combination of the present invention is preferable, raw material introduces phosphorus, antimony,
Boron element can increase the hole-electron in silicon semiconductor PN junction to concentration.On this basis,
By introducing variable valency metal element, utilize that the low oxygen partial pressure being easily generated under high temperature shows weak also
Former characteristic makes variable valency metal ions be relatively easy to detach weak bound electron, thus further
Increase electron concentration and the ability of migration.Additionally, by coating titanium film in wafer surface, by
Make the absorption to ultraviolet light the most sensitive in the intrinsic property that its energy gap is wider, Ke Yida
To further with the ultraviolet portion in sunlight, add the utilization rate to sunlight, carry
High energy conversion efficiency.Solar cell material of the present invention and preparation method are easily achieved,
Have broad application prospects.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below will knot
Close embodiments of the invention, the technical scheme in the embodiment of the present invention is carried out clearly and completely
Describe.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creation
The every other embodiment obtained under property work premise, broadly falls into the scope of protection of the invention.
Embodiment 1:
A kind of high energy conversion rate solaode panel material, is made up of the raw material of following weight portion:
Silicon dioxide 49 parts, phosphorus pentoxide 1 part, antimony oxide 0.3 part, diboron trioxide 1.7
Part, iron sesquioxide 2 parts, copper oxide 1 part, butyl titanate 12 parts, zinc nitrate 1.1 parts,
Dehydrated alcohol 28 parts.
Preparation process is as follows:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 60 minutes
To solution E, wherein, butyl titanate instillation process is carried out with stirring simultaneously；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is warming up to 430 DEG C calcining and be incubated 30 minutes,
Cool to room temperature with the furnace.
Embodiment 2:
A kind of high energy conversion rate solaode panel material, is made up of the raw material of following weight portion:
Silicon dioxide 45 parts, phosphorus pentoxide 1.2 parts, antimony oxide 0.5 part, diboron trioxide
1.5 parts, iron sesquioxide 1 part, copper oxide 1 part, manganese dioxide 1 part, butyl titanate 8 parts,
Zinc nitrate 0.9 part, dehydrated alcohol 30 parts.
Preparation process is as follows:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 55 minutes
To solution E, wherein, butyl titanate instillation process is carried out with stirring simultaneously；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is warming up to 430 DEG C calcining and be incubated 30 minutes,
Cool to room temperature with the furnace.
Embodiment 3:
A kind of high energy conversion rate solaode panel material, is made up of the raw material of following weight portion:
Silicon dioxide 52 parts, phosphorus pentoxide 0.9 part, antimony oxide 0.6 part, diboron trioxide
1.3 parts, iron sesquioxide 2 parts, manganese dioxide 3 parts, butyl titanate 13 parts, zinc nitrate 1.4
Part, dehydrated alcohol 25 parts.
Preparation process is as follows:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 50 minutes
To solution E, wherein, butyl titanate instillation process is carried out with stirring simultaneously；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is warming up to 430 DEG C calcining and be incubated 30 minutes,
Cool to room temperature with the furnace.
Embodiment 4:
A kind of high energy conversion rate solaode panel material, is made up of the raw material of following weight portion:
Silicon dioxide 50 parts, phosphorus pentoxide 1.1 parts, antimony oxide 0.3 part, diboron trioxide
1.4 parts, copper oxide 2 parts, manganese dioxide 2 parts, butyl titanate 9 parts, zinc nitrate 1 part, nothing
Water-ethanol 26 parts.
Preparation process is as follows:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 70 minutes
To solution E, wherein, butyl titanate instillation process is carried out with stirring simultaneously；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is warming up to 430 DEG C calcining and be incubated 30 minutes,
Cool to room temperature with the furnace.
Above example only in order to technical scheme to be described, is not intended to limit；Although
With reference to previous embodiment, the present invention is described in detail, those of ordinary skill in the art
It is understood that the technical scheme described in foregoing embodiments still can be modified by it,
Or wherein portion of techniques feature is carried out equivalent；And these amendments or replacement, not
The essence making appropriate technical solution departs from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. a high energy conversion rate solaode panel material, it is characterised in that by following weight
The raw material composition of part: silicon dioxide 45-52 part, phosphorus pentoxide 0.9-1.2 part, three oxidations two
Antimony 0.2-0.6 part, diboron trioxide 1.3-1.8 part, variable valency metal oxide 2-5 part, metatitanic acid fourth
Ester 8-13 part, zinc nitrate 0.9-1.4 part, dehydrated alcohol 25-30 part.
The most according to claim 1, high energy conversion rate solaode panel material, its feature exists
In, it is made up of the raw material of following weight portion: silicon dioxide 49 parts, phosphorus pentoxide 1 part, three
Aoxidize 0.3 part of two antimony, diboron trioxide 1.7 parts, variable valency metal oxide 3 parts, butyl titanate
12 parts, zinc nitrate 1.1 parts, dehydrated alcohol 28 parts.
High energy conversion rate solaode panel material the most according to claim 2, its feature
Being, described variable valency metal oxide is in iron sesquioxide, copper oxide and manganese dioxide
Plant or several.
4. one kind according to described high energy conversion rate solaode sheet material arbitrary in claim 1-3
The preparation method of material, it is characterised in that comprise the steps:
1) by silicon dioxide, phosphorus pentoxide, antimony oxide, diboron trioxide and the gold that appraises at the current rate
Belong to oxide and put into after silica crucible is sufficiently mixed, be warming up to 1460 DEG C and obtain fused mass A；
2) after the temperature stabilization of fused mass A, seed crystal is slowly immersed in fused mass A the fastest
Speed is lifted up obtaining venturi portion B；
3) after venturi portion B has grown, adjustment lifting speed and temperature make the change of boule diameter
Change scope is 1-2mm, obtains equal-diameter part C；
4) after equal-diameter part C has grown, adjust lifting speed and make crystal bar divide with liquid level with temperature
Open, take equal-diameter part and cutting obtains wafer D；
5) after zinc nitrate being added dehydrated alcohol, then instill butyl titanate and stir 50-70 minute
Obtain solution E；
6) carry film with the speed of 2mm/s after being immersed in solution E by wafer D and put into 90 DEG C and do
Dry case is dried 15 minutes, obtains film wafer F；
7) film wafer F is put into resistance furnace is calcined and is incubated, cool to room temperature with the furnace.
The preparation side of high energy conversion rate solaode panel material the most according to claim 4
Method, it is characterised in that: described step 5) in butyl titanate instill process with stir carry out simultaneously,
Mixing time is 60 minutes.
The preparation side of high energy conversion rate solaode panel material the most according to claim 4
Method, it is characterised in that: described step 7) in calcining heat be 430 DEG C, temperature retention time is 30
Minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610466795.4A CN105895716A (en) | 2016-06-22 | 2016-06-22 | Solar cell material with high energy conversion rate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610466795.4A CN105895716A (en) | 2016-06-22 | 2016-06-22 | Solar cell material with high energy conversion rate and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105895716A true CN105895716A (en) | 2016-08-24 |
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| CN109545866A (en) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | A kind of high conversion solar cell material and preparation method thereof |
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| US6203611B1 (en) * | 1999-10-19 | 2001-03-20 | Memc Electronic Materials, Inc. | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
| CN101724899A (en) * | 2009-09-08 | 2010-06-09 | 任丙彦 | Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds |
| CN103422161A (en) * | 2013-06-04 | 2013-12-04 | 卡姆丹克太阳能（江苏）有限公司 | Preparation method of N-type solar silicon monocrystal material |
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| US6203611B1 (en) * | 1999-10-19 | 2001-03-20 | Memc Electronic Materials, Inc. | Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
| CN101724899A (en) * | 2009-09-08 | 2010-06-09 | 任丙彦 | Growth process for N-type solar energy silicon single crystal with minority carrier service life of larger than or equal to 1,000 microseconds |
| CN103422161A (en) * | 2013-06-04 | 2013-12-04 | 卡姆丹克太阳能（江苏）有限公司 | Preparation method of N-type solar silicon monocrystal material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109545866A (en) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | A kind of high conversion solar cell material and preparation method thereof |
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Application publication date: 20160824 |