CN105892234A - Extreme ultraviolet lithography free-form surface lighting system capable of achieving pixelated pupil - Google Patents
Extreme ultraviolet lithography free-form surface lighting system capable of achieving pixelated pupil Download PDFInfo
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- CN105892234A CN105892234A CN201610053543.9A CN201610053543A CN105892234A CN 105892234 A CN105892234 A CN 105892234A CN 201610053543 A CN201610053543 A CN 201610053543A CN 105892234 A CN105892234 A CN 105892234A
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- compound eye
- diaphragm
- visual field
- pupil
- form surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microscoopes, Condenser (AREA)
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Abstract
The invention provides an extreme ultraviolet lithography free-form surface lighting system capable of achieving a pixelated pupil. The system comprises three groups of reflectors along the light path transmission direction, wherein the first group of reflectors comprise a field compound eye array; the second group of reflectors comprise a diaphragm compound eye array; the third group of reflectors are a relay lens group; the field compound eye array comprises N field compound eyes; each field compound eye is a free-form surface reflector; the reflecting surface of each reflector is in a form of a rectangle; the sizes of all rectangles are different; the diaphragm compound eye array comprises N diaphragm compound eyes; each diaphragm compound eye is a spherical reflector or a free-form surface reflector; the reflecting surface of each reflector is in the form of the rectangle; the sizes of all rectangles are the same; N field compound eyes on the field compound eye array correspond to N diaphragm compound eyes on the diaphragm compound eye array one by one; and N is the sum of pixels of which the light intensity values on the exit pupil surface of the lighting system are not zero. By the system provided by the invention, pixelated light intensity distribution is achieved on the exit pupil surface.
Description
Technical field
The present invention relates to a kind of extreme ultraviolet photolithographic free form surface illuminator realizing pixelation pupil, belong to photoetching and shine
Bright technical field.
Background technology
Extreme ultraviolet (EUV) photoetching, as the most promising Next Generation Lithography, is placed hope on realization and is partly led manufacture
The industrialized requirement of 22nm and more high-tech node.The core component of projection aligner includes light source module, illuminator
And projection objective system.Illuminator major function be for mask plane provide Uniform Illumination, control exposure dose and realize from
Axle light illumination mode.The design philosophy of extreme ultraviolet photolithographic illuminator mainly has two kinds at present: double compound eye based on kohler's illumination
Illumination and corrugated plating based on Ke Le-critical illumination illumination, the illumination of the most double compound eye is good with its even light effect, and process technology is relatively
Ripe, it is simple to control, and be easily achieved the advantages such as off-axis illumination and become the mainstay structure of extreme ultraviolet photolithographic illuminator.
In recent years, one of effective means that source mask optimization (SMO) technology strengthens as resolution, it is introduced in EUV
To realize the exposure size of 7nm and techniques below node in photoetching.In order to ensure preferable exposure performance, SMO technology is generally wanted
Illuminator is asked to be capable of the pupil with complicated light distribution.Under normal circumstances, the light intensity of this pupil is pixelation distribution,
Light intensity in each pixel can be arbitrary value.How to realize the above-mentioned pupil with complicated light distribution, this is for illumination
It is a problem needing solution badly for the design of system, but presently relevant technology yet there are no open report.
Summary of the invention
In view of this, the invention provides a kind of extreme ultraviolet photolithographic free form surface illumination realizing pixelation pupil is
System, this system can realize pixelation light distribution on emergent pupil face, provides technology for the enforcement of source mask optimisation technique and props up
Support, thus further increase the resolution of etching system.
Realize technical scheme as follows:
A kind of extreme ultraviolet photolithographic free form surface illuminator realizing pixelation pupil, along paths direction, institute
The system of stating includes that three groups of reflecting mirrors, first group of reflecting mirror are made up of visual field compound eye array, and second group of reflecting mirror is by diaphragm compound eye battle array
Row composition, the 3rd group of reflecting mirror is relay lens group;Wherein, described visual field compound eye array is made up of N number of visual field compound eye, each visual field
Compound eye is a free-form surface mirror, and the reflecting surface of each reflecting mirror is rectangle, and the size of all rectangles all differs;Institute
Stating diaphragm compound eye array to be made up of N number of diaphragm compound eye, each diaphragm compound eye is a spherical reflector or free-form surface mirror,
The reflecting surface of each reflecting mirror is rectangle, and all rectangles is equivalently-sized;N number of visual field compound eye on the compound eye array of visual field with
N number of diaphragm compound eye one_to_one corresponding on diaphragm compound eye array, described N is the pixel that on illuminator emergent pupil face, light intensity value is not zero
Sum;
Described diaphragm compound eye is used for reflexing to incident beam corresponding diaphragm compound eye, and in diaphragm compound eye
Form an arc hot spot;Described diaphragm compound eye is for carrying out shaping to incident arc hot spot so that it is reflection one is sized
And uniform arc hot spot is to relay lens group;Described relay lens group for incident arc hot spot is imaged in mask plane,
And all arc hot spots equivalently-sized in mask plane.
Further, relay lens group of the present invention is made up of two Mirrors with second order surface, is additionally operable to diaphragm compound eye
On the entrance pupil face of the projection objective imaging in projection aligner residing for described illuminator.
Further, as the reflecting surface size of the free-form surface mirror of visual field compound eye, the present invention determines that principle is: anti-
The light intensity that each beamlet that the face of penetrating is reflected is comprised is identical with the light intensity value of respective pixel on given emergent pupil face.
The operation principle of system is: the light beam of intermediate focus outgoing enters in illuminator, and each visual field compound eye is by light
Bundle reflexes in corresponding diaphragm compound eye, and the size of all visual fields compound eye all differs, and is achieved in incident beam
Unequal cutting, by light beam cutting make light intensity that each beamlet comprised with in respective pixel on given emergent pupil face
Light intensity value identical, meanwhile, the number of visual field compound eye is identical with the number of pixels on emergent pupil face, and the system of thereby guaranteeing that can be at emergent pupil
The pixelation light distribution given is realized on face;Each visual field compound eye is free form surface, for the light of one arc of reflection
Speckle is in diaphragm compound eye;Each diaphragm compound eye is a sphere or free-form surface mirror so that all outgoing beams exist
An equivalently-sized arc hot spot can be obtained in mask plane.This hot spot is imaged at mask plane by follow-up relay lens group,
Thus realize Uniform Illumination, the most also diaphragm compound eye is imaged on the entrance pupil face of projection objective, it is achieved pupil is filled.
Beneficial effect
First, the illuminator that the present invention proposes can realize pixelation light distribution, and each pixel on emergent pupil face
In light intensity can be arbitrary value, this system is that the enforcement of source mask optimisation technique provides technical support, thus further
Improve the resolution of etching system.
Secondly, the illuminator that the present invention proposes can realize multiple off-axis illumination pattern, thus improves exposure system further
The resolving power of system.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the extreme ultraviolet photolithographic illuminator of the realized pixelation pupil that the present invention proposes.
Fig. 2 is the pixelation pupil schematic diagram that illumination system layout example needs to realize.
Fig. 3 is the layout viewing of visual field compound eye.
Fig. 4 is the layout viewing of diaphragm compound eye.
Fig. 5 is the native system structure chart obtained in optical simulation software.
Fig. 6 is hot spot scatter diagram in the mask plane that emulation obtains.
Fig. 7 designs, for the present invention, the light distribution that example obtains on emergent pupil face.
Wherein, 1-intermediate focus, 2-visual field compound eye array, 3-diaphragm compound eye array, 4-Mirrors with second order surface 1,5-bis-
Secondary curved reflector 2,6-mask plane, 7-illuminator emergent pupil.
Detailed description of the invention
The present invention is described in detail with detailed description of the invention below in conjunction with the accompanying drawings.
The beam convergence of light source module outgoing is in intermediate focus, then in illuminator, for convenience of description, and this
Bright think that all light beams all do not consider actual light source module from intermediate focus outgoing.
Be illustrated in figure 1 the structural representation of this illuminator, along paths direction, described system include three groups anti-
Penetrating mirror, first group of reflecting mirror is made up of visual field compound eye array, and second group of reflecting mirror is made up of diaphragm compound eye array, the 3rd group of reflection
Mirror is relay lens group;First group of reflecting mirror of system is made up of N number of visual field compound eye, and second group of reflecting mirror of system is by N number of diaphragm compound eye
Constitute, and the N number of diaphragm compound eye one_to_one corresponding on the N number of visual field compound eye on the compound eye array of visual field and diaphragm compound eye array.
Described N is the sum of the pixel that light intensity value is not zero on illuminator emergent pupil face.Generally emergent pupil is a normalization
Circle, this circle can cut into M pixel, and in this M pixel, and light intensity value corresponding to the most N number of pixel is not zero (each
The light intensity value of individual pixel is determined by SMO technology).There is Nonimage Conjugate Relations in this N number of pixel and diaphragm compound eye, thus is one
One correspondence, simultaneously because there is also relation one to one between visual field compound eye and diaphragm compound eye, thus visual field compound eye is individual
Number is identical with the total number of the pixel that light intensity value on emergent pupil face is not zero.
Each visual field compound eye is a free-form surface mirror, for tentatively realizing an arc in diaphragm compound eye
Hot spot;The reflecting surface of each free-form surface mirror is a rectangle, and the size of all rectangles all differs, and is achieved in
Unequal cutting to incident beam, is cut in the light intensity and given emergent pupil face that each beamlet is comprised by light beam
Light intensity value in respective pixel is identical, and meanwhile, the number of visual field compound eye is identical with the number of pixels on emergent pupil face, thereby guarantees that and is
System can realize the pixelation light distribution given on emergent pupil face;All visual fields compound eye is all arranged closely in visual field compound eye flat board
On.
Each diaphragm compound eye is a sphere or free-form surface mirror, and the reflecting surface of each reflecting mirror is
One rectangle, all rectangles equivalently-sized.Diaphragm compound eye carries out secondary reshaping to incident light beam, it is thus achieved that size meets design
The uniform arcuate shape hot spot required.All diaphragm compound eye are all arranged on diaphragm compound eye flat board.
The 3rd group of reflecting mirror of system is two panels Mirrors with second order surface, and it act as to become at incident uniform arcuate shape hot spot
As, in mask plane, diaphragm compound eye being imaged on the entrance pupil face of projection objective simultaneously.
The work process of native system is: the light beam that intermediate focus comes in and goes out is incident in the compound eye of visual field, each visual field compound eye
All a free-form surface mirror, incident beam after in the reflection of each visual field compound eye outgoing to this visual field compound eye phase
In corresponding diaphragm compound eye, and obtain an arc hot spot.Each diaphragm compound eye is a sphere or free form surface
Reflecting mirror, in order to the further shaping of arc hot spot to above-mentioned acquisition, thus obtains a size and meets the uniform of design requirement
Arc hot spot.This arc hot spot, after two quadratic surface relay lenses, images in mask plane, and this reflecting mirror group is also simultaneously
Diaphragm compound eye is imaged on the entrance pupil face of given projection objective, it is achieved pupil is filled.
The operation principle of this illuminator is similar with the operation principle of existing double fly-eye illumination system, therefore, and system
In the coordinate of all elements and angle of inclination can obtain (such as patent ZL201210132163.6) with the design of existing method.
The face shape parameter of the relay lens of system can also obtain (such as patent ZL201210132163) by existing method for designing.In system certainly
By the face type design of curved surface visual field compound eye and free form surface diaphragm compound eye can also obtain by existing method (such as R.Wu,
Z.Zheng,H.L I and X.Liu,“Optimization design of irradiance array for LED
uniform rectangular illumination,”Appl.Opt.13,2257-2263(2012).)
The embodiment of the present invention:
As shown in table 1, first against the parameter determination illuminator of extreme ultraviolet lithography projection objective of laboratory design
The size of arc visual field on exit pupil diameter, distance of exit pupil and mask face, illuminator needs the pixelation pupil such as Fig. 2 realized
Shown in
Table 1
Set up rectangular coordinate system with intermediate focus for zero, utilize prior art to calculate double compound eye flat board respectively
Coordinate, angle of inclination, and the coordinate of relay lens group, angle of inclination and face shape parameter, as shown in table 2, the X of all elements sits
Mark is 0, and the Gama angle of inclination of all elements is 0.
Table 2
Element | Y(mm) | Z(mm) | Alpha(°) | Beta(°) | K | R(mm) |
Visual field compound eye flat board | 0 | 700 | 10.5 | 0 | 0 | 0 |
Diaphragm compound eye flat board | -391.44 | -257.98 | 13.0 | 0 | 0 | 0 |
Relay lens 1 | -32 | 785 | 5.1 | 0 | -0.1 | 1015.29 |
Relay lens 2 | -138 | 221 | -172.2 | 0 | -0.21 | 1331.25 |
In this example, compound eye flat board illuminated region in visual field is an ellipse, and it is ellipse that all visual fields compound eye is respectively positioned on this
In circle.The reflecting surface of each visual field compound eye is a rectangle, its a size of: long 16mm, wide 1.5mm~16mm.Visual field compound eye
246 altogether, its arrangement is as shown in Figure 3.
In this example, 424 altogether of diaphragm compound eye element, the reflecting surface of each diaphragm compound eye element is a square
Shape, its a size of: long 4.2mm, wide 4.2mm.This system can realize multiple pixelation pupil, at given pixelation pupil
Under requirement, Fig. 4 gives the arrangement mode of diaphragm compound eye.
Said lighting system is carried out ray tracing emulation, obtain system structure as it is shown in figure 5, the hot spot in mask plane such as
Shown in Fig. 6, within its illumination non-uniformity can be controlled in 4.8%, meet the EUV lithography illumination requirement to the uniformity.System goes out
The light distribution in pupil face is as it is shown in fig. 7, pupil light intensity error is about 1.2%.
In sum, these are only presently preferred embodiments of the present invention, be not intended to limit protection scope of the present invention.
All within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included in the present invention's
Within protection domain.
Claims (3)
1. the extreme ultraviolet photolithographic free form surface illuminator that can realize pixelation pupil, it is characterised in that pass along light path
Broadcasting direction, described system includes that three groups of reflecting mirrors, first group of reflecting mirror are made up of visual field compound eye array, and second group of reflecting mirror is by light
Door screen compound eye array composition, the 3rd group of reflecting mirror is relay lens group;Wherein, described visual field compound eye array is made up of N number of visual field compound eye,
Each visual field compound eye is a free-form surface mirror, and the reflecting surface of each reflecting mirror is rectangle, and the size of all rectangles is equal
Differ;Described diaphragm compound eye array is made up of N number of diaphragm compound eye, and each diaphragm compound eye is a spherical reflector or the most bent
Face reflecting mirror, the reflecting surface of each reflecting mirror is rectangle, and all rectangles is equivalently-sized;N number of on the compound eye array of visual field
N number of diaphragm compound eye one_to_one corresponding on visual field compound eye and diaphragm compound eye array, described N is that on illuminator emergent pupil face light intensity value is not
It it is the sum of the pixel of zero;
Described diaphragm compound eye for reflexing to corresponding diaphragm compound eye by incident beam, and is formed in diaphragm compound eye
One arc hot spot;Described diaphragm compound eye is for carrying out shaping to incident arc hot spot so that it is reflection one is sized and all
Even arc hot spot is to relay lens group;Described relay lens group is for imaging in mask plane by incident arc hot spot, and covers
In die face, all arc hot spots is equivalently-sized.
The most according to claim 1, can realize the extreme ultraviolet photolithographic free form surface illuminator of pixelation pupil, its feature exists
In, described relay lens group is made up of two Mirrors with second order surface, is additionally operable to diaphragm compound eye images in described illuminator institute
On the entrance pupil face of the projection objective of the projection aligner at place.
The most according to claim 1, can realize the extreme ultraviolet photolithographic free form surface illuminator of pixelation pupil, its feature exists
In, determine that principle is by each height that reflecting surface is reflected as the reflecting surface size of the free-form surface mirror of visual field compound eye
The light intensity that light beam is comprised is identical with the light intensity value of respective pixel on given emergent pupil face.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112162468A (en) * | 2020-10-14 | 2021-01-01 | 北京理工大学 | Ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201219996A (en) * | 2010-09-01 | 2012-05-16 | Zeiss Carl Smt Gmbh | Optical system |
US8208127B2 (en) * | 2007-07-16 | 2012-06-26 | Carl Zeiss Smt Gmbh | Combination stop for catoptric projection arrangement |
CN102629082A (en) * | 2012-04-28 | 2012-08-08 | 北京理工大学 | Design method of extreme ultra-violet lithography compound eye lighting system |
CN103092000A (en) * | 2012-11-14 | 2013-05-08 | 北京理工大学 | EUVL (Extreme Ultraviolet Lithography) compound eye dodging off-axis Illumination system and method for realizing off-axis Illumination |
CN203870394U (en) * | 2014-05-26 | 2014-10-08 | 张河生 | UV LED light source structure and parallel-light exposure machine |
CN104460242A (en) * | 2014-12-11 | 2015-03-25 | 北京理工大学 | Extreme ultraviolet lithography illuminating system based on free-form surface diaphragm compound eye |
-
2016
- 2016-01-26 CN CN201610053543.9A patent/CN105892234B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8208127B2 (en) * | 2007-07-16 | 2012-06-26 | Carl Zeiss Smt Gmbh | Combination stop for catoptric projection arrangement |
TW201219996A (en) * | 2010-09-01 | 2012-05-16 | Zeiss Carl Smt Gmbh | Optical system |
CN102629082A (en) * | 2012-04-28 | 2012-08-08 | 北京理工大学 | Design method of extreme ultra-violet lithography compound eye lighting system |
CN103092000A (en) * | 2012-11-14 | 2013-05-08 | 北京理工大学 | EUVL (Extreme Ultraviolet Lithography) compound eye dodging off-axis Illumination system and method for realizing off-axis Illumination |
CN203870394U (en) * | 2014-05-26 | 2014-10-08 | 张河生 | UV LED light source structure and parallel-light exposure machine |
CN104460242A (en) * | 2014-12-11 | 2015-03-25 | 北京理工大学 | Extreme ultraviolet lithography illuminating system based on free-form surface diaphragm compound eye |
Non-Patent Citations (1)
Title |
---|
R.WU, Z.ZHENG, H.L I AND X.LIU: "Optimization design of irradiance array for LED uniform rectangular illumination", 《APPLIED OPTICS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112162468A (en) * | 2020-10-14 | 2021-01-01 | 北京理工大学 | Ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system |
CN112162468B (en) * | 2020-10-14 | 2021-07-27 | 北京理工大学 | Ultrahigh numerical aperture combined variable-magnification extreme ultraviolet lithography illumination system |
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