CN105884362A - Static pressing process of recrystallized silicon carbide product - Google Patents
Static pressing process of recrystallized silicon carbide product Download PDFInfo
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- CN105884362A CN105884362A CN201410746005.9A CN201410746005A CN105884362A CN 105884362 A CN105884362 A CN 105884362A CN 201410746005 A CN201410746005 A CN 201410746005A CN 105884362 A CN105884362 A CN 105884362A
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- silicon carbide
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Abstract
The invention discloses a static pressing process of a recrystallized silicon carbide product. The process comprises the steps of powder mixing, filling in a mold, static pressing, sintering, and the like. With the advantages of high bulk density, high temperature, oxidation and wear resistance, and the like, the isostatic pressed recrystallized sintered silicon carbide product has special use value in the working environments of high temperature, high speed and strongly corrosive media. The static pressing process can achieve near-net-shape forming of green bodies and has the effects of improving the product properties and reducing the raw material consumption and the cost.
Description
Technical field
The present invention relates to silicon carbide micro-powder field, be specifically related to a kind of recrystallized silicon carbide goods
Hydrostatic profile technique.
Background technology
Silicon carbide articles is the typical material based on covalent bond, have higher elevated temperature strength,
Good non-oxidizability, high heat conductance and low thermal coefficient of expansion, anti-thermal shock and resistance to chemical attack etc.
Good characteristic, is widely used in the crucial pottery in the fields such as machinery, metallurgy, chemical industry and Aero-Space
Porcelain parts.The green density of silicon carbide articles is one phase very important parameter, and it is to burning till
The density of rear silicon carbide articles plays vital effect.Silicon carbide articles density is to carborundum
The service life of goods and its working life have the biggest impact.Silicon carbide articles is along with making
By temperature and the increase of the time of use, the high heat conduction of its carbofrax material, anti-thermal shock, high intensity
To gradually lose efficacy, finally can not be continuing with because change is excessive.It is primarily due to goods make
During with, carborundum generation oxidation causes its chemistry to change with physical property, thus reduces
Its service life and use temperature.For preventing its oxidation, reduce as much as possible its porosity,
Increasing extrudate density, the properties that so can be greatly improved goods includes thermal conductivity, anti-folding
Intensity, antioxygenic property and use temperature, service life.Traditional recrystallized silicon carbide goods
Molding mode, based on dry-pressing formed, injection forming, plastic molding.Above-mentioned molding mode is former
Material consumption is big, relatively costly.
Summary of the invention
It is an object of the invention to overcome defect present in prior art, it is provided that a kind of improvement produces
Moral character energy, reduces the hydrostatic profile technique of the recrystallized silicon carbide goods of consumption of raw materials.
For realizing above-mentioned technique effect, the technical scheme is that a kind of recrystallized silicon carbide
The hydrostatic profile technique of goods, it is characterised in that comprise the following steps:
S1: silicon carbide granular sand and silicon carbide micro-powder will be configured, static pressure compound is made in mixing,
In described static pressure compound, the percentage by weight of silicon carbide granular sand is 75～85%, then to quiet
Pressure compound adds bonding agent, mixing；
S2: above-mentioned static pressure raw material is placed in mould；
S3: be placed in by mould in cold isostatic compaction machine, is gradually forced into briquetting pressure, and
Pressurize at least 200s, described briquetting pressure is 190～210MPa；
S4: be removed from the molds by blank, sinters blank, and cooling i.e. prepares silicon carbide articles.
Wherein, described silicon carbide granular sand is admixed finepowder, comprises granularity in described admixed finepowder
Being respectively 200 μm, 100 μm and the granularity sand of 50 μm, the weight of 200 μm granularity sands accounts for
The percentage ratio of admixed finepowder is respectively the weight of 50～60%, 100 μm granularity sands, and to account for mixing micro-
The percentage ratio of powder is respectively 10～15%.
Wherein, described silicon carbide micro-powder is admixed finepowder, comprises granularity and divide in described admixed finepowder
Not being 5 μm, 10 μm and the granularity sand of 20 μm, it is micro-that the weight of 5 μm granularity sands accounts for mixing
The percentage ratio of powder is respectively the weight of 28～32%, 10 μm granularity sands and accounts for the percentage of admixed finepowder
Ratio respectively 32～36%.
Wherein, described bonding agent is gathered by low-molecular weight water-soluble cellulose and low-molecular weight water-soluble
Vinyl alcohol mixes, described bonding agent weight account for the percentage ratio of static pressure compound weight be 2～
3%.
Wherein, in described bonding agent the percentage by weight of low-molecular weight water-soluble cellulose be 65～
75%.
Advantages of the present invention and having the beneficial effects that:
The recrystallization sintering silicon carbide products of isostatic pressing, owing to having body density height high, resistance to
Temperature, antioxidation and the advantage such as wear-resistant, thus high temperature, at a high speed, the work of strong corrosive medium
Environment has special use value.Hydrostatic profile technique can realize base substrate near net-shape
Type, isostatic pressing is improving properties of product, is reducing consumption of raw materials, reduction cost.
Detailed description of the invention
Below in conjunction with embodiment, the detailed description of the invention of the present invention is further described.Below
Embodiment is only used for clearly illustrating technical scheme, and can not limit with this
Protection scope of the present invention.
Embodiment 1
The hydrostatic profile technique of the recrystallized silicon carbide goods of embodiment 1, comprises the following steps:
S1: silicon carbide granular sand and silicon carbide micro-powder will be configured, static pressure compound is made in mixing,
In static pressure compound, the percentage by weight of silicon carbide granular sand is 75%, then to static pressure compound
Middle addition bonding agent, mixing；
S2: above-mentioned static pressure raw material is placed in mould；
S3: be placed in by mould in cold isostatic compaction machine, is gradually forced into briquetting pressure, and
Pressurize at least 200s, briquetting pressure is 190MPa；
S4: be removed from the molds by blank, sinters blank, and cooling i.e. prepares silicon carbide articles.
Wherein, silicon carbide granular sand is admixed finepowder, comprises granularity and be respectively 200 in admixed finepowder
μm, 100 μm and the granularity sand of 50 μm, the weight of 200 μm granularity sands accounts for admixed finepowder
Percentage ratio be respectively 50%, the weight of 100 μm granularity sands accounts for the percentage score of admixed finepowder
It is not 10%.
Wherein, silicon carbide micro-powder is admixed finepowder, comprises granularity and be respectively 5 μ in admixed finepowder
M, 10 μm and the granularity sand of 20 μm, the weight of 5 μm granularity sands accounts for the percentage of admixed finepowder
Ratio respectively 28%, the weight of 10 μm granularity sands accounts for the percentage ratio of admixed finepowder and is respectively 32%.
Wherein, bonding agent is by low-molecular weight water-soluble cellulose and low-molecular weight water-soluble polyethylene
Alcohol mixes, and it is 2% that bonding agent weight accounts for the percentage ratio of static pressure compound weight.
Wherein, in bonding agent, the percentage by weight of low-molecular weight water-soluble cellulose is 65%.
Embodiment 2
The hydrostatic profile technique of the recrystallized silicon carbide goods of embodiment 2, comprises the following steps:
S1: silicon carbide granular sand and silicon carbide micro-powder will be configured, static pressure compound is made in mixing,
In static pressure compound, the percentage by weight of silicon carbide granular sand is 80%, then to static pressure compound
Middle addition bonding agent, mixing；
S2: above-mentioned static pressure raw material is placed in mould；
S3: be placed in by mould in cold isostatic compaction machine, is gradually forced into briquetting pressure, and
Pressurize at least 200s, briquetting pressure is 200MPa；
S4: be removed from the molds by blank, sinters blank, and cooling i.e. prepares silicon carbide articles.
Wherein, silicon carbide granular sand is admixed finepowder, comprises granularity and be respectively 200 in admixed finepowder
μm, 100 μm and the granularity sand of 50 μm, the weight of 200 μm granularity sands accounts for admixed finepowder
Percentage ratio be respectively 55%, the weight of 100 μm granularity sands accounts for the percentage score of admixed finepowder
It is not 12%.
Wherein, silicon carbide micro-powder is admixed finepowder, comprises granularity and be respectively 5 μ in admixed finepowder
M, 10 μm and the granularity sand of 20 μm, the weight of 5 μm granularity sands accounts for the percentage of admixed finepowder
Ratio respectively 30%, the weight of 10 μm granularity sands accounts for the percentage ratio of admixed finepowder and is respectively 34%.
Wherein, bonding agent is by low-molecular weight water-soluble cellulose and low-molecular weight water-soluble polyethylene
Alcohol mixes, and it is 2.5% that bonding agent weight accounts for the percentage ratio of static pressure compound weight.
Wherein, in bonding agent, the percentage by weight of low-molecular weight water-soluble cellulose is 70%.
Embodiment 3
The hydrostatic profile technique of the recrystallized silicon carbide goods of embodiment 3, comprises the following steps:
S1: silicon carbide granular sand and silicon carbide micro-powder will be configured, static pressure compound is made in mixing,
In static pressure compound, the percentage by weight of silicon carbide granular sand is 85%, then to static pressure compound
Middle addition bonding agent, mixing；
S2: above-mentioned static pressure raw material is placed in mould；
S3: be placed in by mould in cold isostatic compaction machine, is gradually forced into briquetting pressure, and
Pressurize at least 200s, briquetting pressure is 210MPa；
S4: be removed from the molds by blank, sinters blank, and cooling i.e. prepares silicon carbide articles.
Wherein, silicon carbide granular sand is admixed finepowder, comprises granularity and be respectively 200 in admixed finepowder
μm, 100 μm and the granularity sand of 50 μm, the weight of 200 μm granularity sands accounts for admixed finepowder
Percentage ratio be respectively 60%, the weight of 100 μm granularity sands accounts for the percentage score of admixed finepowder
It is not 15%.
Wherein, silicon carbide micro-powder is admixed finepowder, comprises granularity and be respectively 5 μ in admixed finepowder
M, 10 μm and the granularity sand of 20 μm, the weight of 5 μm granularity sands accounts for the percentage of admixed finepowder
Ratio respectively 32%, the weight of 10 μm granularity sands accounts for the percentage ratio of admixed finepowder and is respectively 36%.
Wherein, bonding agent is by low-molecular weight water-soluble cellulose and low-molecular weight water-soluble polyethylene
Alcohol mixes, and it is 3% that bonding agent weight accounts for the percentage ratio of static pressure compound weight.
Wherein, in bonding agent, the percentage by weight of low-molecular weight water-soluble cellulose is 75%.
In the optimum amount scope of binding agent, biscuit intensity quickly increases, when reaching optimum amount,
Biscuit intensity reaches maximum, then increases with binder content, and biscuit intensity increases slowly, this
When being due to binding agent to optimum add amount, can fill than binding agent between granule, binding agent thickness
Rationally, density is maximum, the crosslinked action of binding agent plays the most completely for degree.Exceed binding agent
After good consumption, intergranular crosslinked action change is little, and therefore biscuit Strength Changes is the least.
The above is only the preferred embodiment of the present invention, it is noted that for this technology
For the those of ordinary skill in field, on the premise of without departing from the technology of the present invention principle, also
Can make some improvements and modifications, these improvements and modifications also should be regarded as the protection of the present invention
Scope.
Claims (5)
1. the hydrostatic profile technique of recrystallized silicon carbide goods, it is characterised in that include
Following steps:
S1: silicon carbide granular sand and silicon carbide micro-powder will be configured, static pressure compound is made in mixing,
In described static pressure compound, the percentage by weight of silicon carbide granular sand is 75～85%, then to quiet
Pressure compound adds bonding agent, mixing；
S2: above-mentioned static pressure raw material is placed in mould；
S3: mould is placed in cold isostatic compaction machine, is gradually forced into briquetting pressure, and protects
Being depressed into few 200s, described briquetting pressure is 190～210MPa；
S4: be removed from the molds by blank, sinters blank, and cooling i.e. prepares silicon carbide articles.
The hydrostatic profile technique of recrystallized silicon carbide goods the most according to claim 1, its
Being characterised by, described silicon carbide granular sand is admixed finepowder, comprises granularity in described admixed finepowder
Being respectively 200 μm, 100 μm and the granularity sand of 50 μm, the weight of 200 μm granularity sands accounts for
The percentage ratio of admixed finepowder is respectively the weight of 50～60%, 100 μm granularity sands and accounts for admixed finepowder
Percentage ratio be respectively 10～15%.
The hydrostatic profile technique of recrystallized silicon carbide goods the most according to claim 2, its
Being characterised by, described silicon carbide micro-powder is admixed finepowder, comprises granularity and divide in described admixed finepowder
Not being 5 μm, 10 μm and the granularity sand of 20 μm, the weight of 5 μm granularity sands accounts for admixed finepowder
Percentage ratio be respectively the weight of 28～32%, 10 μm granularity sands and account for the percentage ratio of admixed finepowder
It is respectively 32～36%.
The hydrostatic profile technique of recrystallized silicon carbide goods the most according to claim 3, its
Being characterised by, described bonding agent is gathered by low-molecular weight water-soluble cellulose and low-molecular weight water-soluble
Vinyl alcohol mixes, described bonding agent weight account for the percentage ratio of static pressure compound weight be 2～
3%.
The hydrostatic profile technique of recrystallized silicon carbide goods the most according to claim 4, its
Be characterised by, in described bonding agent the percentage by weight of low-molecular weight water-soluble cellulose be 65～
75%.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107954643A (en) * | 2017-12-12 | 2018-04-24 | 湖南太子新材料科技有限公司 | A kind of carborundum shaped piece material preparation method |
| CN107954720A (en) * | 2017-12-12 | 2018-04-24 | 湖南太子新材料科技有限公司 | A kind of carborundum pipe material and preparation method thereof |
| CN107986791A (en) * | 2017-12-12 | 2018-05-04 | 湖南太子新材料科技有限公司 | A kind of carborundum sheet material and preparation method thereof |
| CN110981491A (en) * | 2019-12-20 | 2020-04-10 | 湖南太子新材料科技有限公司 | Recrystallized silicon carbide material and preparation method thereof |
| CN113004043A (en) * | 2019-12-20 | 2021-06-22 | 湖南太子新材料科技有限公司 | Recrystallization silicon carbide product isostatic pressing forming process |
| CN117886609A (en) * | 2024-03-15 | 2024-04-16 | 广东佛山市陶瓷研究所控股集团股份有限公司 | Silicon carbide ceramic material and preparation method and application thereof |
-
2014
- 2014-12-09 CN CN201410746005.9A patent/CN105884362A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107954643A (en) * | 2017-12-12 | 2018-04-24 | 湖南太子新材料科技有限公司 | A kind of carborundum shaped piece material preparation method |
| CN107954720A (en) * | 2017-12-12 | 2018-04-24 | 湖南太子新材料科技有限公司 | A kind of carborundum pipe material and preparation method thereof |
| CN107986791A (en) * | 2017-12-12 | 2018-05-04 | 湖南太子新材料科技有限公司 | A kind of carborundum sheet material and preparation method thereof |
| CN110981491A (en) * | 2019-12-20 | 2020-04-10 | 湖南太子新材料科技有限公司 | Recrystallized silicon carbide material and preparation method thereof |
| CN113004043A (en) * | 2019-12-20 | 2021-06-22 | 湖南太子新材料科技有限公司 | Recrystallization silicon carbide product isostatic pressing forming process |
| CN117886609A (en) * | 2024-03-15 | 2024-04-16 | 广东佛山市陶瓷研究所控股集团股份有限公司 | Silicon carbide ceramic material and preparation method and application thereof |
| CN117886609B (en) * | 2024-03-15 | 2024-05-28 | 广东佛山市陶瓷研究所控股集团股份有限公司 | Silicon carbide ceramic material and preparation method and application thereof |
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Application publication date: 20160824 |
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