CN105883749B - Single-walled carbon nanotube and its selective extraction method and application - Google Patents
Single-walled carbon nanotube and its selective extraction method and application Download PDFInfo
- Publication number
- CN105883749B CN105883749B CN201610224511.0A CN201610224511A CN105883749B CN 105883749 B CN105883749 B CN 105883749B CN 201610224511 A CN201610224511 A CN 201610224511A CN 105883749 B CN105883749 B CN 105883749B
- Authority
- CN
- China
- Prior art keywords
- walled carbon
- carbon nanotube
- conjugated polymer
- caliber
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Present invention discloses a kind of single-walled carbon nanotube with specific caliber and its selective extraction method and application, the extracting method is comprising steps of in organic solvent, form dispersion liquid by dispersion technology for single-walled carbon nanotube raw material and conjugated polymer；Wherein, the conjugated polymer is that its main chain has twist structured conjugated polymer；By dispersion liquid described in centrifugal treating, supernatant liquor is taken；The caliber range for obtaining high-purity is the single-walled carbon nanotube of 1.1~1.3nm.Compared with prior art, the present invention has twist structured conjugated polymer by its main chain, and selective extraction goes out the single-walled carbon nanotube that caliber range is 1.1~1.3nm from raw material, and not only method is simple and efficient, and is conducive to large-scale production；And in product purity height and caliber range set, excellent properties are shown in terms of micro/nano level electronic device applications, there is high application value；And extracting method through the invention, it also can get high-purity unidextrality single-walled carbon nanotube, there is more superior performance.
Description
Technical field
The invention belongs to carbon nanotube technology field, it is related to a kind of single-walled carbon nanotube and its selective extraction method and answers
With, especially a kind of single-walled carbon nanotube with specific caliber, its selective extraction method and there is the single-walled carbon nanotube
Micro/nano level electronic device.
Background technique
Single-walled carbon nanotube (SWCNTs) has unique one-dimensional nano structure, it is considered to be nm regime is most potential
Material.Especially semi-conductor type single-walled carbon nano tube (s-SWCNTs), intrinsic carrier mobility are up to 70000cm2V-1s-
1, and without adulterating the bipolar transmission that hole and electronics can be realized, therefore application in integrated circuits is sent to great expectations,
It is considered as the semiconductor material in rear mole of epoch.
The method of synthesis SWCNTs includes chemical vapour deposition technique, arc process and laser evaporization method etc. at present, but obtain
It is all the SWCNTs mixture of different tube diameters, conductive properties and chirality.However with different-diameter and chiral s-SWCNTs meeting
Homogeneity and consistency to device array bring huge problem, especially influence in micro/nano level electronic device more greatly, therefore
It is more narrower better with chiral distribution that application in terms of scale integrated circuit needs the diameter of s-SWCNTs to be distributed.This is just needed from conjunction
At SWCNTs mixture in isolate diameter distribution and chiral be distributed narrower s-SWCNTs.
But the separation of SWCNTs is mainly based upon between the carbon nanotube of different chiralitys due to chemistry and electronic structure
Different and formation faint physics and chemical property difference, and due to the composition of different types of single-walled carbon nanotube and chemically
Difference between matter is very small, so that especially chiral and diameter the separation of the separation of single-walled carbon nanotube still faces many be stranded
It is difficult.
The SWCNTs isolation technics of special diameter and chiral structure is rapidly developed in recent years, according to dispersion carbon nanometer
The dispersant material difference of pipe can be divided into surfactant system, biological systems and conjugated molecule system, apply
When respectively have advantage and disadvantage.Wherein, conjugated molecule system need to can only be realized by simple ultrasound and centrifugal process to single wall carbon
The chiral selectivity of nanotube separates, and simple process and is easy to amplify, therefore attracts extensive attention.
Currently, can isolate the carbon nanotube compared with small diameter tube such as (7,5), (8,6) using conjugated polymer, and have
The report of a small amount of transistor device, but performance is generally relatively low.But it is most suitable for s-SWCNTs's for semi-conductor electronic device
Generally in 1.1-1.3nm range, the technology for capableing of the SWCNTs of the isolated caliber range of high-purity at present also compares caliber
Few, the technology for especially obtaining the unidextrality single-walled carbon nanotube with the caliber range of high-purity there is no report.
Summary of the invention
It is at least to solve one of above-mentioned technical problem, the purpose of the present invention is to provide a kind of single walls with specific caliber
The production of carbon nanotube, its selective extraction method and micro/nano level electronic device and micro/nano level electronic device with it
Method, the caliber range of single-walled carbon nanotube is 1.1~1.3nm, and has very high semiconductor purity, function admirable.
To solve the foregoing invention first purpose, an embodiment of the present invention provides a kind of single wall carbon with specific caliber and receives
The selective extraction method of mitron, the extracting method comprising steps of
In organic solvent, single-walled carbon nanotube raw material and conjugated polymer are formed into dispersion liquid by dispersion technology；
By dispersion liquid described in centrifugal treating, supernatant liquor is taken；
The caliber range for obtaining high-purity is the single-walled carbon nanotube of 1.1~1.3nm；
Wherein, the conjugated polymer is that its main chain has twist structured conjugated polymer.
As the further improvement of an embodiment of the present invention, the conjugated polymer is with molecular structure shown in following formula
Polymer any one.
Further, in the conjugated polymer, any two R may be configured as it is identical or different, and be respectively have 6~
The straight chained alkyl of 16 carbon atoms；The number-average molecular weight of polymer is 4000 to 60000.
As the further improvement of an embodiment of the present invention, the step is " in organic solvent, by single-walled carbon nanotube
Raw material and conjugated polymer pass through dispersion technology formation dispersion liquid " in, the dispersion technology is ultrasound or shearing or injection or newborn
Change or ball milling.
As the further improvement of an embodiment of the present invention, the preparation method of the single-walled carbon nanotube raw material is chemistry
Vapour deposition process or arc discharge method or Plasma discharge methods or laser ablation method.
As the further improvement of an embodiment of the present invention, the single-walled carbon nanotube that the extracting method obtains can be into one
Step is preferably the unidextrality single-walled carbon nanotube that content is more than 70%, and the semi-conductor type single-walled carbon for purity higher than 98% is received
Mitron.
Correspondingly, an embodiment of the present invention also provides a kind of single-walled carbon nanotube with specific caliber, the single wall
Carbon nanotube is made by extracting method as described above, and the caliber range of the single-walled carbon nanotube is 1.1~1.3nm.
As the further improvement of an embodiment of the present invention, the single-walled carbon nanotube is the one hand that content is more than 70%
Property single-walled carbon nanotube, and for purity be higher than 98% semiconductor single-walled carbon.
Correspondingly, an embodiment of the present invention also provides a kind of micro/nano level electronic device, the micro/nano level electronics device
Using single-walled carbon nanotube as described above as semiconductor portions in part.
Correspondingly, an embodiment of the present invention also provides a kind of producer of micro/nano level electronic device as described above
Method, the production method comprising steps of
The solution of single-walled carbon nanotube is coated in substrate and forms film, the caliber range of the single-walled carbon nanotube is
1.1~1.3nm；
Micro/nano level patterning is carried out to the film using lithography and etching technology；
Using the patterned film as semiconductor portions, the micro/nano level electronic device is obtained.
Compared with prior art, the present invention is with following advantageous effects: having by its main chain twist structured total
Conjugated polymer, selective extraction provides the single-walled carbon nanotube of specific tube diameter range from raw material, and caliber range is 1.1~
1.3nm, not only method is simple and efficient, and is conducive to large-scale production；And in product purity height and caliber range set, in micro/nano level
Excellent properties are shown in terms of electronic device applications；And extracting method through the invention, it also can get high-purity unidextrality
Single-walled carbon nanotube has more superior performance, all has high answer in fields such as integrated circuit, sensor and flexible electronics
With value.
Detailed description of the invention
Fig. 1 is the stream of the selective extraction method of the single-walled carbon nanotube with specific caliber of an embodiment of the present invention
Cheng Tu；
Fig. 2 is the UV-visible-near infrared absorption figure that obtained supernatant afterwards is centrifuged in embodiment 1；
Fig. 3 is the UV-visible-near infrared absorption figure that obtained supernatant afterwards is centrifuged in embodiment 2；
Fig. 4 is two-dimensional fluoroscopic (PLE) figure that obtained supernatant afterwards is centrifuged in embodiment 2；
Fig. 5 is the flow chart of the production method of the micro/nano level electronic device of an embodiment of the present invention；
Fig. 6 is the scanning electron microscope (SEM) photograph of obtained semiconductor single-walled carbon film in embodiment 3；
Fig. 7 is the transfer curve figure of a kind of transistor device when source-drain voltage is -1V in embodiment 3.
Specific embodiment
Below with reference to specific embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
It is the selective extraction of the single-walled carbon nanotube with specific caliber of an embodiment of the present invention referring to Fig. 1, Fig. 1
The flow chart of method, the extracting method comprising steps of
In organic solvent, single-walled carbon nanotube raw material and conjugated polymer are formed into dispersion liquid by dispersion technology；Its
In, the conjugated polymer is that its main chain has twist structured conjugated polymer；
By dispersion liquid described in centrifugal treating, supernatant liquor is taken；
The caliber range for obtaining high-purity is the single-walled carbon nanotube of 1.1~1.3nm.
Specifically, the conjugated polymer is any one of the polymer with molecular structure shown in the following figure.
Wherein, in the molecular structure shown in above formula, any two R may be configured as it is identical or different, that is, described in difference
The R of conjugated polymer may be configured as identical or different, and the R of the same conjugated polymer may be alternatively provided as identical or different.R points
It Wei not be with the straight chained alkyl of 6~16 carbon atoms；The number-average molecular weight of polymer is 4000 to 60000.
The quasi polymer can be synthesized by Suzuki polymerization reaction, for synthetic route following formula:
In addition, the organic solvent be toluene, dimethylbenzene, chlorobenzene, dioxane, chloroform, methylene chloride, NMP, hexane,
Any one in hexamethylene, DMF or two or more combinations, but not limited to this.
The preparation method of the single-walled carbon nanotube raw material can be chemical vapour deposition technique or arc discharge method or plasma
Body electric discharge or laser ablation method are received by the single wall carbon that single-walled carbon nanotube raw material prepared by the above method is contaminated with metallicity
Mitron (m-SWCNTs) and semi-conductor type single-walled carbon nano tube (s-SWCNTs), the caliber range of single-walled carbon nanotube raw material are
0.6~1.8nm.
In step " single-walled carbon nanotube raw material and conjugated polymer is formed by dispersion technology in organic solvent, and divided
In dispersion liquid ", the dispersion technology includes at least one of the methods of ultrasound, ball milling, shearing, emulsification, concussion.
In an embodiment of the present invention, single-walled carbon nanotube raw material and conjugated polymer are added in organic solvent, led to
It crosses high speed shear or injection or emulsification or ball milling is dispersed, so that the single-walled carbon nanotube selectively wrapped up by conjugated polymer
It is evenly dispersed to form stable and uniform dispersion liquid in organic solvent.Not scattered carbon nanotube is assembled with more carbon pipes
Bundles of bundles of tubes exists, micro- with metastable solids together with other impurity such as metal oxide (catalyst residue) and amorphous carbon
Particle shape formula is suspended in solution or Direct precipitation gets off.
Wherein, its main chain of the conjugated polymer has distorted-structure, and unique structure makes the list of itself and specific caliber
Wall carbon nano tube matches, and forms stable composite construction, to can selectively be extracted during the separation process.
In an embodiment of the present invention, the step " by dispersion liquid described in centrifugal treating, taking supernatant liquor " includes
But following steps are not limited only to,
The dispersion liquid is centrifuged under the first centrifugal rotational speed and forms solid fraction and liquid phase part；
The liquid phase part is centrifuged under the second centrifugal rotational speed, takes supernatant liquor；Wherein second centrifugal rotational speed is big
In first centrifugal rotational speed.
Specifically, carrying out centrifugal treating to the dispersion liquid, first centrifugal rotational speed is 10000g~1000000g, when
Between be 10min~4h, so that the dispersion liquid be separated to form solid fraction and liquid phase part, gained liquid phase part it is main at
Divide is high-purity with specific caliber and chiral single-walled carbon nanotube.
Further, ultracentrifugation processing is carried out with second centrifugal rotational speed again to above-mentioned liquid phase part, wherein institute
State the second centrifugal rotational speed be 200,000g~1,000,000g, in this way, in solution only with conjugated polymer spy the most matched
The carbon nanotube of fixed-caliber or chirality can be stabilized, and other carbon nanotubes precipitate.List is further increased to realize
The purity of wall carbon nano tube, the chirality of product and Diameter distribution are narrower in obtained supernatant liquor, and the one hand of high-purity can be obtained
Property single-walled carbon nanotube, and the purity of the Diameter distribution of gained single-walled carbon nanotube is higher.
In addition, the single-walled carbon nanotube that the extracting method obtains can be further preferred in an embodiment of the present invention
For unidextrality single-walled carbon nanotube, and the content of unidextrality single-walled carbon nanotube is more than 70%, while gained single-walled carbon nanotube
In, the purity of semiconductor single-walled carbon is higher than 98%.
Correspondingly, an embodiment of the present invention provides a kind of single-walled carbon nanotube of high-purity, the single-walled carbon nanotube
Caliber range be 1.1~1.3nm, and the single-walled carbon nanotube is obtained by said extracted method.
Further, the single-walled carbon nanotube is the unidextrality single-walled carbon nanotube that content is more than 70%, and is purity
Semi-conductor type single-walled carbon nano tube higher than 98%.
In the following, be situated between to the selective extraction method of the above-mentioned single-walled carbon nanotube with specific caliber in conjunction with the embodiments
It continues.
Embodiment 1 prepares the single-walled carbon nanotube that diameter is distributed in 1.1-1.3 nanometers
Single-walled carbon nanotube prepared by the conjugated polymer of 50mg structure shown in formula I and 50mg Plasma discharge methods
It is dissolved in the in the mixed solvent of 100mL toluene and 5ml dioxane.Dispersed 30 minutes by high speed shear, be then centrifuged for, is centrifuged
Speed is 50000g, and centrifugation time is 30 minutes.Taking supernatant is the single-walled carbon nanotube solution of gained special diameter range.
It is tested using UV-visible-near infrared absorption (refering to Fig. 2), spectral results show in isolated supernatant
Containing there are many single-walled carbon nanotube, caliber range is 1.1-1.3 nanometers.
Embodiment 2 prepares (13,3) type unidextrality single-walled carbon nanotube
Type single wall carbon prepared by the conjugated polymer of 50mg structure as shown in Formula II and 50mg chemical gas phase growth methods is received
Mitron is dissolved in 100mL xylene solvent.It by ultrasonic disperse 1 hour, is then centrifuged for, centrifugal speed 30000g, is centrifuged
Time is 30 minutes.Supernatant is taken to pass through ultracentrifugation again, centrifugal speed 500,000g centrifugation time 2 hours, takes supernatant
As gained single-walled carbon nanotube solution.Utilize UV-visible-near infrared absorption (UV-Vis-NIR) (refering to Fig. 3), two
Dimension fluorescence spectrum (PLE) (refering to Fig. 4) is tested, and shows mainly to contain in isolated supernatant in conjunction with two kinds of spectral results
There are the unidextrality single-walled carbon nanotube of (13,3) type, and content of carbon nanotubes > 90% of the chirality.
Correspondingly, an embodiment of the present invention additionally provides a kind of micro/nano level electronic device, the micro/nano level electronics
Device includes single-walled carbon nanotube as described above, because the caliber range of the single-walled carbon nanotube is 1.1~1.3nm,
When being applied to the micro/nano level electronic device as semiconductor portions, the micro/nano level electronic device has fabulous property
Energy.The micro/nano level electronic device includes but are not limited to transistor, light emitting diode, photovoltaic cell, photodiode.
Referring to Fig. 5, Fig. 5 is the flow chart of the production method of the micro/nano level electronic device of an embodiment of the present invention, institute
State production method comprising steps of
The solution of single-walled carbon nanotube is coated in substrate and forms film；The caliber range of the single-walled carbon nanotube is
1.1~1.3nm；
Micro/nano level patterning is carried out to the film using lithography and etching technology；
Using the patterned film as semiconductor portions, the micro/nano level electronic device is obtained.
It, can will be described specifically, in the step " solution of single-walled carbon nanotube is coated in substrate and forms film "
The solution of single-walled carbon nanotube is coated in substrate by dip-coating or spraying or other accurate coating methods, to be formed with specific
The unidextrality semiconductor carbon nanometer tube film of caliber.It, can be as desired by single in control solution when practical operation
The concentration and film forming condition of pipe, regulate and control the density of single-walled carbon nanotube in the film.
In the step " carrying out micro/nano level patterning to the film using lithography and etching technology ", also using light
Lithography simultaneously carries out micro/nano level patterning to the film in conjunction with electron beam coating technique, and the patterned film includes having
The electrode of micro-channels, wherein the channel length can be set as needed.
In order to preferably illustrate the present invention, below with reference to embodiment to the production method of above-mentioned micro/nano level electronic device into
Row is introduced.
Embodiment 3
It is on the monocrystalline silicon piece of 200 nano silicon oxides, by narrow chirality single-walled carbon nanotube obtained in embodiment 2 on surface
The semiconductor single-walled carbon film (refering to Fig. 6) of unidextrality is made up of accurate rubbing method for solution, by control solution
Carbon nanotube concentration and film forming condition can regulate and control the density of carbon nanotube in film.Photoetching technique knot is utilized on this film
It closes electron beam coating technique and prepares the golden source-drain electrode with micro-channels, available single chiral single-walled carbon nanotube
Field effect transistor, a length of 20 microns of device channel.The transistor device is shown when source-drain voltage is -1V refering to Fig. 7
Transfer curve.The mobility of the transistor device reaches 11.6cm2/ Vs, on-off ratio are more than 106, show this batch of single
The semiconductor purity of pipe is higher than 99%.
Embodiment 4
On a glass substrate, carbon nano-tube film is made in the distribution single-walled carbon nanotube of narrow diameter obtained in embodiment 1.
Palladium electrode is prepared using photoetching technique combination electron beam coating technique on this film, electrode spacing is 10 microns, surface spin coating
Polymethyl methacrylate is as passivation layer, the infrared photovoltaic device or infrared light of available single chiral single-walled carbon nanotube
Sensor.
Compared with prior art, the present invention is with following advantageous effects: having by its main chain twist structured total
Conjugated polymer, selective extraction provides the single-walled carbon nanotube of specific tube diameter range from raw material, and caliber range is 1.1~
1.3nm, not only method is simple and efficient, and is conducive to large-scale production；And in product purity height and caliber range set, in micro/nano level
Excellent properties are shown in terms of electronic device applications；And extracting method through the invention, it also can get high-purity unidextrality
Single-walled carbon nanotube has more superior performance, all has high answer in fields such as integrated circuit, sensor and flexible electronics
With value.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiments of understanding.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically
Protection scope bright, that they are not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention
Or change should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of selective extraction method of the single-walled carbon nanotube with specific caliber, which is characterized in that the extracting method
Comprising steps of
In organic solvent, single-walled carbon nanotube raw material and conjugated polymer are formed into dispersion liquid by dispersion technology；Wherein, institute
Stating conjugated polymer is that its main chain has twist structured conjugated polymer；
By dispersion liquid described in centrifugal treating, supernatant liquor is taken；The step include by the dispersion liquid under the first centrifugal rotational speed
It is centrifuged and is formed solid fraction and liquid phase part, and the liquid phase part is centrifuged under the second centrifugal rotational speed, takes upper layer clear
Liquid；Wherein second centrifugal rotational speed is greater than first centrifugal rotational speed；
The caliber range for obtaining high-purity is the single-walled carbon nanotube of 1.1~1.3nm, and the single-walled carbon nanotube is more than for content
70% unidextrality single-walled carbon nanotube, and the semi-conductor type single-walled carbon nano tube for purity higher than 98%；
The conjugated polymer is any one of the polymer with molecular structure shown in following formula；
In the conjugated polymer, it and is respectively with 6~16 carbon atoms that any two R, which may be configured as identical or different,
Straight chained alkyl；The number-average molecular weight of polymer is 4000 to 60000.
2. the selective extraction method of the single-walled carbon nanotube according to claim 1 with specific caliber, feature exist
In the step " single-walled carbon nanotube raw material and conjugated polymer is formed by dispersion technology in organic solvent, and dispersed
In liquid ", the dispersion technology is ultrasound or shearing or injection or emulsification or ball milling.
3. the selective extraction method of the single-walled carbon nanotube according to claim 1 with specific caliber, feature exist
In the preparation method of the single-walled carbon nanotube raw material is chemical vapour deposition technique or arc discharge method or Plasma discharge methods
Or laser ablation method.
4. a kind of single-walled carbon nanotube with specific caliber, which is characterized in that the single-walled carbon nanotube is by claim 1-3
Any one of described in extracting method be made, the caliber range of the single-walled carbon nanotube is 1.1~1.3nm.
5. the single-walled carbon nanotube according to claim 4 with specific caliber, which is characterized in that the single
Pipe is the unidextrality single-walled carbon nanotube that content is more than 70%, and is higher than 98% semi-conductor type single-walled carbon nano tube for purity.
6. a kind of micro/nano level electronic device, which is characterized in that with claim 4 or 5 institutes in the micro/nano level electronic device
The single-walled carbon nanotube stated is as semiconductor portions.
7. a kind of production method of micro/nano level electronic device as claimed in claim 6, which is characterized in that the production method
Comprising steps of
The solution of single-walled carbon nanotube is coated in substrate and forms film, the caliber range of the single-walled carbon nanotube is 1.1
~1.3nm；
Micro/nano level patterning is carried out to the film using lithography and etching technology；
Using the patterned film as semiconductor portions, the micro/nano level electronic device is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610224511.0A CN105883749B (en) | 2016-04-12 | 2016-04-12 | Single-walled carbon nanotube and its selective extraction method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610224511.0A CN105883749B (en) | 2016-04-12 | 2016-04-12 | Single-walled carbon nanotube and its selective extraction method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105883749A CN105883749A (en) | 2016-08-24 |
| CN105883749B true CN105883749B (en) | 2019-03-15 |
Family
ID=57013531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610224511.0A Active CN105883749B (en) | 2016-04-12 | 2016-04-12 | Single-walled carbon nanotube and its selective extraction method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105883749B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107456918B (en) * | 2016-06-03 | 2020-03-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional tree-shaped conjugated compound-carbon nano tube compound and application thereof |
| CN108878652A (en) * | 2017-05-15 | 2018-11-23 | 松下知识产权经营株式会社 | The manufacturing method of electrooptical device |
| CN109809392B (en) * | 2017-11-21 | 2020-09-11 | 北京华碳元芯电子科技有限责任公司 | Method for purifying semiconductor single-walled carbon nanotube by solution layering |
| CN109867274A (en) * | 2017-12-01 | 2019-06-11 | 北京华碳元芯电子科技有限责任公司 | The method of purification of semi-conductive single-walled carbon nanotubes and its preparation method of film |
| CN110902670B (en) | 2018-09-14 | 2021-07-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Carbon nanotube oriented film, preparation method and application thereof |
| CN111232954B (en) * | 2020-02-24 | 2022-08-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-purity high-concentration chiral single-walled carbon nanotube dispersion liquid, carbon nanotube film and preparation method |
| CN111573655B (en) * | 2020-06-18 | 2021-09-28 | 江南大学 | Method for enriching single chiral carbon nano tube with high yield |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6461958B2 (en) * | 2013-08-20 | 2019-01-30 | ナショナル リサーチ カウンシル オブ カナダ | Semiconducting single-walled carbon nanotubes |
| CN103681895A (en) * | 2013-11-28 | 2014-03-26 | 北京大学 | Infrared imaging detector based on carbon nano tubes and preparation method of detector |
-
2016
- 2016-04-12 CN CN201610224511.0A patent/CN105883749B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105883749A (en) | 2016-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105883749B (en) | Single-walled carbon nanotube and its selective extraction method and application | |
| Samanta et al. | Conjugated polymer-assisted dispersion of single-wall carbon nanotubes: the power of polymer wrapping | |
| CN105819425B (en) | A kind of high-purity semiconductor type carbon nano-tube and its lot splitting method and application | |
| US20060257564A1 (en) | Systems and methods for producing single-walled carbon nanotubes (SWNTs) on a substrate | |
| Hennrich et al. | Length-sorted, large-diameter, polyfluorene-wrapped semiconducting single-walled carbon nanotubes for high-density, short-channel transistors | |
| Vimalanathan et al. | Surfactant‐free Fabrication of Fullerene C60 Nanotubules Under Shear | |
| CN107285298B (en) | method for selectively separating single-walled carbon nanotubes with specific diameters and chiralities and application | |
| Liu et al. | Controlled growth of semiconducting and metallic single-wall carbon nanotubes | |
| Moore et al. | Individually suspended single-walled carbon nanotubes in various surfactants | |
| Huang et al. | Ultralong, Well‐Aligned Single‐Walled Carbon Nanotube Architectureson Surfaces | |
| Qin et al. | Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports | |
| Nomoto et al. | Atom probe tomography analysis of boron and/or phosphorus distribution in doped silicon nanocrystals | |
| Du et al. | Electronic functionality in graphene-based nanoarchitectures: Discovery and design via first-principles modeling | |
| TWI519468B (en) | Monodisperse single-walled carbon nanotube populations and related methods for providing same | |
| US7354871B2 (en) | Nanowires comprising metal nanodots and method for producing the same | |
| Huang et al. | Orientated assembly of single-walled carbon nanotubes and applications | |
| US20110198559A1 (en) | Cnt devices, low-temperature fabrication of ctn and cnt photo-resists | |
| Miller et al. | Purifying colloidal nanoparticles through ultracentrifugation with implications for interfaces and materials | |
| Joo et al. | Polymer-free electronic-grade aligned semiconducting carbon nanotube array | |
| TW200906718A (en) | Method for dispersion, alignment and deposition of nanotubes | |
| Wang et al. | Separation of semiconducting carbon nanotubes using conjugated polymer wrapping | |
| Yu et al. | Recycling strategy for fabricating low-cost and high-performance carbon nanotube TFT devices | |
| Kou et al. | Unidirectional motion of a water nanodroplet subjected to a surface energy gradient | |
| Li et al. | Aerosol-phase synthesis and processing of luminescent silicon nanocrystals | |
| Javey | The 2008 Kavli prize in nanoscience: carbon nanotubes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160824 Assignee: Suzhou fiber color nano New Material Co., Ltd. Assignor: SUZHOU XIYIN NANO TECHNOLOGY CO., LTD. Contract record no.: X2019320010003 Denomination of invention: Single-walled carbon nanotube as well as selective extraction method and application thereof Granted publication date: 20190315 License type: Common License Record date: 20190923 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Suzhou fiber color nano New Material Co.,Ltd. Assignor: SUZHOU XIYIN NANO TECHNOLOGY Co.,Ltd. Contract record no.: X2019320010003 Date of cancellation: 20201016 |