CN105873537B - 脱毛设备 - Google Patents

脱毛设备 Download PDF

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CN105873537B
CN105873537B CN201480060557.2A CN201480060557A CN105873537B CN 105873537 B CN105873537 B CN 105873537B CN 201480060557 A CN201480060557 A CN 201480060557A CN 105873537 B CN105873537 B CN 105873537B
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optical energy
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pulse optical
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B·利威
M·米兹拉希
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Silkorn Beauty Co.,Ltd.
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Abstract

脱毛设备。一种用于光热分解作用的方法，所述方法包括：将伽伐尼电流能量施加至毛囊的一区域处的皮肤，并且以一能量水平和持续时间将脉冲光学能量施加至毛囊的所述区域处的皮肤，以导致毛乳头的热破坏。

Description

脱毛设备
技术领域
本发明涉及通过光热分解作用(photothermolysis)的脱毛(毛发去除)，并且特别涉及组合利用强脉冲光(IPL)的伽伐尼(galvanic)电流能量和/或脉冲激光能量的脱毛设备。
背景技术
如在脱毛领域中众所周知的，光学能量可以用于破坏毛囊，但是必须具有足够的幅度和频率。例如，虽然发光二极管(LED)传递光学能量，但是该能量是具有低幅度的连续波并且不足以破坏毛囊。作为代替，LED被用于皮肤再生。毛发去除通过强脉冲光(IPL)或脉冲激光能量来进行。当前在现有技术中用来破坏毛囊的光学能量通常以非常短(例如，数十毫秒)的脉冲被传递，使得该能量能够穿透皮肤至毛囊。
导致毛干和毛囊的热破坏(thermal destruction)的光学能量在由毛囊中发现的黑素特别吸收的波长的范围内，也称作选择性光热分解作用。然而，已知问题是光能量必须穿透的表皮富含黑色素并且因此吸收大部分能量，这导致毛囊的不充分加热以及对表皮的损伤。使用更高能量水平以产生毛囊的充分加热可能导致焦化和色素沉着过度。已知的是通过IPL或激光在深色皮肤上使用的高能量可能产生灼伤。
利用选择性光热分解作用的另一个问题是由于取决于波长的组织散射导致波长可能不足以穿透足够深度以到达目标。已经使用或提出了各种技术来帮助改进该处理的效率。这些技术包括在施加光能量之前或期间冷却被处理区域，或者目标在于将光学能量聚焦在皮肤表面下的特定深度处以增加该深度处的能量注量的聚焦技术。
发明内容
本发明试图提供用于通过光热分解作用脱毛的改进方法和设备，其以新方式解决了现有技术的上述问题。
在本发明中，脱毛设备组合连续伽伐尼能量与脉冲光学能量(IPL或激光)。在不受任何理论限制的情况下，伽伐尼能量打开毛囊周围的毛孔以增加毛囊的暴露，用于光学脉冲能量。伽伐尼能量用作用于光学脉冲能量的准备。伽伐尼电流是连续波，但是不处于能够破坏毛囊的水平。
因此，在本发明中使用的伽伐尼能量不与现有技术中用于脱毛的伽伐尼能量混淆。在现有技术伽伐尼脱毛中，直流电通常穿过针，以在毛囊中生成氢氧化钠，氢氧化钠破坏毛乳头。相反，在本发明中，伽伐尼能量处于非常不同的水平，并且打开毛孔并准备被处理区域以用于脉冲能量的穿透。另外，伽伐尼微电流可以生成毛乳头或毛囊的微小加热效果，但是处于非破坏性水平。现有技术中的伽伐尼电流/微电流用于帮助药用化妆品穿透到皮肤中。在现有技术中，伽伐尼电流/微电流已经不再用于毛发去除。在以下说明书和权利要求中，术语伽伐尼电流、伽伐尼能量和微电流可交换地使用。
附图说明
参考附图，仅通过举例，本发明的这些和附加构造特征和优点将根据本发明的实施方式的随后描述更容易地被理解，其中：
图1至图3是根据本发明的非限制性实施方式的使用伽伐尼能量和脉冲光学能量的组合通过光热分解作用进行脱毛的方法的简化示意图；以及
图4是根据本发明的非限制性实施方式的用于实现图1至图3的脱毛方法的设备的简化示意图。
具体实施方式
现在参考图1至图3，其示出了根据本发明的非限制性实施方式的使用伽伐尼能量和脉冲光学能量的组合通过光热分解作用进行脱毛的方法。
在图1中，伽伐尼电流能量被施加至毛囊2的该区域处的皮肤。通过伽伐尼微电流单元4生成伽伐尼电流。伽伐尼电流是连续波或被脉冲调制，但是不处于能够破坏毛乳头5的水平。在不限制的情况下，伽伐尼电流在10安培至500微安培的范围内。相信伽伐尼能量打开毛囊2周围的毛孔3，增加毛囊2的暴露，以用于随后施加脉冲光学能量。图2示出了毛孔3增大的毛囊2。
在图3中，脉冲光学能量被施加至毛囊2的该区域处的皮肤，以导致毛乳头5的热破坏。通过脉冲光学能量源6生成脉冲光学能量，脉冲光学能量源6可以发射强脉冲光(IPL)和/或脉冲激光能量。在不限制的情况下，操作参数可以是如下：
光学能量-IPL或激光-在2.5-40焦耳每cm2的范围内
光学能量的脉冲持续时间-0.5-30毫秒
针对激光的光谱-波长在700nm-1100nm的范围内
针对IPL的光谱-在450nm-1200nm的范围内
现在参考图4，其示出根据本发明的非限制性实施方式的用于实现图1至图3的脱毛方法的脱毛设备10。
设备10包括皮肤界面元件12。伽伐尼微电流单元和脉冲光学能量源(图4中未示出)可以被安装在皮肤接触元件12后面的合适基板或印刷电路板(图4中未示出)上。皮肤界面元件12包括脉冲光学能量皮肤界面部14，其优选为透光的并且可以例如由聚碳酸酯或其它透明材料制成。来自脉冲光学能量源的脉冲光学能量通过脉冲光学能量皮肤界面部14被施加至皮肤。皮肤界面元件12还包括导电表面16，导电表面16提供到皮肤的伽伐尼微电流连接。设备10还可以包括肤色传感器18，肤色传感器位于在皮肤界面元件12中形成的窗口后面。肤色传感器18被用于测量肤色，以确定光学能量是否能够被施加到皮肤上和/或到将施加的能量水平。如本领域中已知的，肤色传感器可以包括但不限制于光源和光电二极管(未示出)。通过将光源照射在皮肤表面上并且通过光电二极管读取其反射，能够确定肤色。
皮肤界面元件12可以被直接施加至皮肤或另选地通过导电介质(诸如，凝胶、乳剂等)施加至皮肤。
可以诸如在皮肤界面元件12的一部分中提供温度传感器20，以用于检测皮肤温度。在不限制的情况下，温度传感器20可以是红外(IR)温度元件、热敏电阻(正系数或负系数)、热晶体管、热电耦等。温度传感器20可以通过控制电路(未示出)在控制环中操作，以根据所感测的反馈温度控制或切断能量。
本领域技术人员将想到，本发明不受以上特别示出和描述的内容限制。而是，本发明的范围不仅包括以上描述的特征的组合和子组合，而且包括在阅读以上描述时对于本领域技术人员将发生的且在现有技术中不存在的其修改和改变。

Claims (7)

1.一种脱毛设备，所述脱毛设备包括：
伽伐尼微电流单元，所述伽伐尼微电流单元能够操作以将伽伐尼电流能量施加至毛囊的一区域处的皮肤，其中，所述伽伐尼电流能量是处于不能破坏毛乳头的水平的连续波能量；
脉冲光学能量源，所述脉冲光学能量源能够操作以按照一能量水平和持续时间将脉冲光学能量施加至所述毛囊的所述区域处的所述皮肤，以导致所述毛乳头的热破坏；以及
皮肤界面元件，所述皮肤界面元件包括：脉冲光学能量皮肤界面部，通过所述脉冲光学能量皮肤界面部施加来自所述脉冲光学能量源的脉冲光学能量；以及导电表面，所述导电表面提供从所述伽伐尼微电流单元至所述皮肤的伽伐尼微电流连接。
2.根据权利要求1所述的脱毛设备，所述脱毛设备还包括：肤色传感器，所述肤色传感器位于在所述皮肤界面元件中形成的窗口后面。
3.根据权利要求1所述的脱毛设备，其中，所述伽伐尼电流能量打开所述毛囊周围的毛孔，以增加所述毛囊的暴露，用于随后施加所述脉冲光学能量。
4.根据权利要求1所述的脱毛设备，其中，所述脉冲光学能量包括强脉冲光IPL和脉冲激光能量中的至少一个。
5.根据权利要求1所述的脱毛设备，其中，所述脉冲光学能量在2.5J/cm2至40J/cm2的范围内并且具有0.5毫秒至30毫秒的脉冲持续时间。
6.根据权利要求1所述的脱毛设备，其中，所述脉冲光学能量包括具有在700nm至1100nm范围内的波长的激光能量。
7.根据权利要求1所述的脱毛设备，其中，所述脉冲光学能量包括具有在450nm至1200nm范围内的波长的IPL。
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PCT/US2014/063762 WO2015069603A1 (en) 2013-11-05 2014-11-04 Combined galvanic and pulsed optical energy for depilation

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BR112016010010B8 (pt) 2023-04-18
US20150126980A1 (en) 2015-05-07
EP3065662A1 (en) 2016-09-14
CA2928934A1 (en) 2015-05-14
EP3065662B1 (en) 2018-08-01
US9827044B2 (en) 2017-11-28
WO2015069603A1 (en) 2015-05-14
BR112016010010B1 (pt) 2022-02-22
CN105873537A (zh) 2016-08-17
BR112016010010A2 (zh) 2017-08-01
ES2688189T3 (es) 2018-10-31

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