CN105870063A - Novel method for enhancing P-junction dyeing effect under low temperature by means of newly-matched acid solution - Google Patents
Novel method for enhancing P-junction dyeing effect under low temperature by means of newly-matched acid solution Download PDFInfo
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- CN105870063A CN105870063A CN201610318062.6A CN201610318062A CN105870063A CN 105870063 A CN105870063 A CN 105870063A CN 201610318062 A CN201610318062 A CN 201610318062A CN 105870063 A CN105870063 A CN 105870063A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
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Abstract
The invention provides a novel method for enhancing the P-junction dyeing effect under low temperature by means of a newly-matched acid solution. According to the method, the newly-matched acid solution is adopted, the acid solution is the mixed solution prepared from HF, HNO3 and CH3COOH with the volume ratio being 1:3:15. The acid solution is used for performing a reaction under the low temperature, the P-junction reaction speed can be increased, and therefore the structure of a P junction is observed. The method is rapid in reaction, high in efficiency and good in observation effect.
Description
Technical field
The present invention relates to material analysis field, particularly relate to one and utilize new proportioning acid solution to react increasing at low temperatures
The new method of strong p-type knot Color.
Background technology
In semi-conducting material, static random access device (Static random access memory, SRAM)
It is a kind of internal memory with static access facility, it is not necessary to refresh circuit and can preserve the data of its storage inside.
SRAM is to be coupled together making by multiple PN junctions, has higher performance, and power consumption is less.PN junction is by one
N-type doping district and p-type doped region are in close contact and are constituted.In Analysis of Semiconductor Materials, often need
P knot in the structures such as SRAM to be observed or the degree of depth of N knot.
In TEM or SEM, observe semi-conducting material, need by sample is carried out acid solution process, prepare TEM
SEM sample thus observe P knot or N knot the degree of depth.But currently used more polysilicon acid solution is general
Composition is HF, HNO3And H2O ratio is the mixed liquor of 1:50:20.Due in PMOS (p-type metal-oxide-semiconductor)
Containing boron, and NMOS (N-type metal-oxide-semiconductor) is containing phosphorus, so being easier to this kind of compared to PMOS, NMOS
Acid liquid reaction, thus the structure that P ties cannot be observed.
Therefore, research and development one is prone to react with PMOS, and the acid solution that can strengthen P knot dyeing is the most meaningful
Problem.
Summary of the invention
It is an object of the invention to provide one utilizes new proportioning acid solution increased response p-type at low temperatures to tie Color
New method, the method use a kind of new proportioning acid solution, react at a lower temperature, can promote
P-type knot reaction rate is accelerated, thus observes the structure that p-type is tied.The method is swift in response, and efficiency is high, sees
Survey effective.
For achieving the above object, the present invention is by the following technical solutions:
A kind of new method utilizing new proportioning acid solution increased response p-type at low temperatures knot Color, its feature exists
In, comprise the following steps:
(1) configuration of Novel polycrystalline silicon acid solution: by HF, HNO3And CH3COOH is implanted sequentially in beaker,
It is uniformly mixed, obtains Novel polycrystalline silicon acid solution；
(2) cross section of SRAM PMOS is prepared, the Novel polycrystalline silicon acid solution cooling then previous step configured,
Sample is put in Novel polycrystalline silicon acid solution and react；
(3), after reaction terminates, sample is placed in FIB and is prepared as TEM sample, or be prepared as SEM sample.
Preferably, HF, HNO in described step 13、CH3The mol ratio of COOH is 1:3:15.
Preferably, in described step 2, the preparation method of the cross section of SRAM PMOS is at focused ion bundle (FIB)
In cut or manually cut.
Preferably, in described step 2, the cooling method of Novel polycrystalline silicon acid solution is for by being placed in liquid nitrogen by acid solution
With in the mixture of water or be placed in ice cube refrigeration.
Preferably, in described step 2, the temperature that the cooling of Novel polycrystalline silicon acid solution is reached is-2-2 DEG C.
Preferably, in described step 2, the time that sample reacts in Novel polycrystalline silicon acid solution is 15-20s.
Preferably, described new method is applicable to the preparation of SEM or TEM sample.
The invention have the advantages that, the acid solution of new proportioning can greatly promote the reaction rate that p-type is tied,
React at a lower temperature, and reaction rate is high so that the sample of preparation can sufficiently reflect
The structure of p-type knot.Thus solving in Analysis of Semiconductor Materials, in SRAM, p-type junction structure is difficult to the difficulty of observation
Topic.
Accompanying drawing explanation
Fig. 1 is the observed result of the SRAM PMOS after novel acid liquid reaction of the present invention.
Fig. 2 is the observed result of the SRAM NMOS after novel acid liquid reaction of the present invention.
Fig. 3 is the observed result of conventional acid solution reacted SRAM PMOS.
Fig. 4 is the observed result of conventional acid solution reacted SRAM NMOS.
Detailed description of the invention
In order to be better understood from the present invention, below by embodiment, the present invention is further described, and embodiment is only used
In explaining the present invention, the present invention will not be constituted any restriction.
Embodiment 1
The cross section of a SRAM PMOS is first cut, then by HF:HNO in FIB3:CH3COOH is with volume ratio
The ratio mixed preparing Novel polycrystalline silicon acid solution of 1:3:15, puts into liquid nitrogen and pure in resistant to elevated temperatures large beaker
Water, puts into the polysilicon acid solution prepared in large beaker and cools down, and at this moment temperature can decline rapidly.By temperature after taking-up
Degree meter is put into acid solution and is measured, and when temperature reaches 0 degree when, sample is put into acid liquid reaction, reacts 15-20
Second.Enter FIB after reaction to be prepared as TEM sample and be observed.
The photo that the photo of SRAM PMOS observation the method prepared and conventional method are observed contrasts,
As shown in drawings, it can be seen that under the method, p-type junction structure is clear, it is easy to observation.
Claims (7)
1. one kind utilizes the new of new proportioning acid solution increased response p-type at low temperatures knot Color
Method, it is characterised in that comprise the following steps:
(1) configuration of Novel polycrystalline silicon acid solution: by HF, HNO3And CH3COOH notes successively
Enter in beaker, be uniformly mixed, obtain Novel polycrystalline silicon acid solution；
(2) cross section of SRAM PMOS, the New Polycrystalline then previous step configured are prepared
Silicic acid liquid is lowered the temperature, and is put into by sample in Novel polycrystalline silicon acid solution and reacts；
(3), after reaction terminates, sample is placed in FIB and is prepared as TEM sample, or preparation
Become SEM sample.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that HF, HNO in described step 13、CH3COOH
Mol ratio be 1:3:15.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that the horizontal stroke of SRAM PMOS in described step 2
The preparation method in cross section is for cut or manually to cut in FIB.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that in described step 2, New Polycrystalline silicic acid
The cooling method of liquid is by acid solution being placed in the liquid nitrogen mixture with water or being placed in ice cube
Refrigeration.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that in described step 2, New Polycrystalline silicic acid
The temperature that liquid cooling is reached is-2-2 DEG C.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that in described step 2, sample is novel many
In crystal silicon acid solution, the time of reaction is 15-20s.
Utilization the most according to claim 1 new proportioning acid solution increased response P at low temperatures
The new method of type knot Color, it is characterised in that described new method is applicable to SEM or TEM
The preparation of sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318062.6A CN105870063B (en) | 2016-05-13 | 2016-05-13 | It is a kind of to utilize the method for matching acid solution increased response p-type knot Color at low temperature |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318062.6A CN105870063B (en) | 2016-05-13 | 2016-05-13 | It is a kind of to utilize the method for matching acid solution increased response p-type knot Color at low temperature |
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| CN105870063A true CN105870063A (en) | 2016-08-17 |
| CN105870063B CN105870063B (en) | 2018-01-12 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1801470A (en) * | 2005-01-06 | 2006-07-12 | 中芯国际集成电路制造(上海)有限公司 | Method for affirming fatal fault in deep-sub-micrometer semiconductor device |
| CN102435627A (en) * | 2011-08-30 | 2012-05-02 | 上海华碧检测技术有限公司 | Dyeing analysis method of super junction high-voltage power MOSFET device doping structure |
| CN105304516A (en) * | 2015-09-22 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | PN junction dyeing method |
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2016
- 2016-05-13 CN CN201610318062.6A patent/CN105870063B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1801470A (en) * | 2005-01-06 | 2006-07-12 | 中芯国际集成电路制造(上海)有限公司 | Method for affirming fatal fault in deep-sub-micrometer semiconductor device |
| CN102435627A (en) * | 2011-08-30 | 2012-05-02 | 上海华碧检测技术有限公司 | Dyeing analysis method of super junction high-voltage power MOSFET device doping structure |
| CN105304516A (en) * | 2015-09-22 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | PN junction dyeing method |
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| CN105870063B (en) | 2018-01-12 |
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