CN105869773A - Preparation method of graphene-metal nanoparticle composite transparent conductive film - Google Patents

Preparation method of graphene-metal nanoparticle composite transparent conductive film Download PDF

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Publication number
CN105869773A
CN105869773A CN201610215165.XA CN201610215165A CN105869773A CN 105869773 A CN105869773 A CN 105869773A CN 201610215165 A CN201610215165 A CN 201610215165A CN 105869773 A CN105869773 A CN 105869773A
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China
Prior art keywords
graphene
preparation
thin film
metal nanoparticle
metal
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CN201610215165.XA
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Chinese (zh)
Inventor
梁铮
李向东
白杨
丁荣
倪振华
梁贺君
郭喜涛
于远方
严春伟
罗云
吕颖
吴玉广
赵宏亮
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CHINA NORTH INDUSTRY NEW TECHNOLOGY PROMOTION INSTITUTE
Inner Mongolia Institute Of Graphene Materials
TAIZHOU SUNANO ENERGY CO Ltd
Original Assignee
CHINA NORTH INDUSTRY NEW TECHNOLOGY PROMOTION INSTITUTE
Inner Mongolia Institute Of Graphene Materials
TAIZHOU SUNANO ENERGY CO Ltd
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Application filed by CHINA NORTH INDUSTRY NEW TECHNOLOGY PROMOTION INSTITUTE, Inner Mongolia Institute Of Graphene Materials, TAIZHOU SUNANO ENERGY CO Ltd filed Critical CHINA NORTH INDUSTRY NEW TECHNOLOGY PROMOTION INSTITUTE
Priority to CN201610215165.XA priority Critical patent/CN105869773A/en
Publication of CN105869773A publication Critical patent/CN105869773A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

The invention provides a preparation method of a graphene-metal nanoparticle composite transparent conductive film. The method comprises the following steps: (1) depositing a 2-10nm metal film on the surface of a transparent substrate, and due to presence of surface energy, forming nanoparticles by self-aggregation of metal on the surface of the substrate; and (2) preparing graphene, transferring the graphene to the surfaces of the nanoparticles to obtain the composite film with high light transmission and conductivity. By the designed graphene-metal nanoparticle composite film, the doping effect of the metal nanoparticles on the graphene is mainly utilized to improve the conductivity; meanwhile, the metal nanoparticles can also be connected to a crystal boundary and a damaged area of the graphene as a conductive bridge; and the conductivity is further improved. Furthermore, the metal nanoparticles are relatively small in size, so that the light transmission of the composite conductive film is not greatly affected.

Description

A kind of preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle
Technical field
The invention provides the preparation method of a kind of compound transparent conducting thin film of Graphene-metal nanoparticle.The invention belongs to new material technology field.
Background technology
Graphene has caused the extensive concern of science and industrial quarters due to performances such as the electricity of its excellence, optics, mechanics.Due to features such as the high light transmittance (97.7%) of Graphene, good electric conductivity and flexibilities, it has important application prospect in fields such as electromagnetic shielding, touch screen, luminescence displays.But, the electric conductivity of Graphene also has a certain distance compared to traditional ITO and metal material.So improve the electric conductivity of Graphene in the urgent need to a kind of method, but its light transmission can not be greatly reduced again simultaneously.Current conventional means includes Graphene is carried out chemical doping, it is combined with metal nanometer line (or nanometer grid), uses multi-layer graphene etc..But, above method is but respectively present the problems such as stability is the best, the raising of complicated process of preparation, electric conductivity is undesirable.
Summary of the invention
Technical problem:Solved by the invention technical problem is that during preparing Graphene-metal nano particle composite material, use the means such as hot evaporation deposition metal nanometer thin film and reunited by spontaneous reunion or heating and obtain metal nanoparticle, then carrying out compound acquisition printing opacity, the composite membrane of electric conductivity excellence with Graphene.
Technical scheme:The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle of the present invention, comprises the steps:
1) at the metallic film of transparent substrates surface deposition 2-10 nanometer, due to surface can existence, metal can agglomerate into nano-particle substrate surface is spontaneous;
2) prepare Graphene, Graphene is transferred to nano grain surface, the laminated film with high light transmittance and electric conductivity can be obtained;
Preferably,
Described step 1) and step 2) between also have a 300-500oThe process of C heat treated.If transparent substrates can bear high-temperature heat treatment, then pass through 300-500oC heat treated improves the agglomerating effect of nano-particle;
In described step 1), the material of metallic film is gold, silver, copper or aluminum;
In described step 1), transparent substrates is to have the thin film of light transmission, preferably glass, PET, PMMA.
In described step 1), the deposition process of metallic film is heat evaporation, magnetron sputtering or electron beam evaporation plating.
Described step 2) in Graphene be by mechanically pulling off method, chemical vapour deposition technique, liquid phase stripping method or graft process prepare.
Beneficial effect:Graphene designed by this invention-metal nanoparticle laminated film mainly make use of metal nanoparticle to the doping effect of Graphene to promote its electric conductivity, metal nanoparticle can also connect crystal boundary and the damaged area of Graphene as conduction bridge simultaneously, promotes its electric conductivity further.Further, since the size of metal nanoparticle is less, so the light transmission of compound-type conducting thin film will not be a greater impact.Finally, this compound transparent conducting thin film also possesses this feature flexible simultaneously, and preparation technology is very simple, is highly suitable to be applied for the fields such as electromagnetic shielding, touch screen, luminescence display.
Accompanying drawing explanation
Fig. 1 is the ultramicroscope picture of Graphene-metal composite light transmitting electro-conductive type thin film that embodiments of the invention 1 are obtained, and the size of gold nano grain is about 20 nanometers.
Detailed description of the invention
Embodiment 1
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle of the present embodiment, comprises the steps:
1) method being deposited with by heat on the surface of glass deposits the gold thin film of 2 nanometers.
2) by the glass containing gold thin film 500oHeating in vacuum 30 minutes under conditions of C, gold atom can agglomerate into gold nano grain at glass surface.
3) single-layer graphene film is obtained by chemical vapour deposition technique in copper foil surface growth.
4) FeCl is utilized3Etching Copper Foil, and by the method for polymethyl methacrylate (PMMA) secondary transfer, Graphene is transferred to surface and has the glass surface of gold nano grain.
5) under room temperature be dried can obtain compound transparent conducting thin film.
Embodiment 2
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle of the present embodiment, comprises the steps:
1) deposited the gold thin film of 5 nanometers by the method for electron beam evaporation plating on the surface of flexible and transparent substrate polyethylene terephthalate (PET).
2) gold atom can agglomerate into nano-particle pet sheet face is spontaneous.
3) single-layer graphene film is obtained by chemical vapour deposition technique in copper foil surface growth.
4) FeCl is utilized3Etching Copper Foil, and by the method for polymethyl methacrylate (PMMA) secondary transfer, Graphene is transferred to surface and has the pet sheet face of gold nano grain.
5) under room temperature be dried can obtain compound transparent conducting thin film.
Embodiment 3
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle of the present embodiment, comprises the steps:
1) deposited the gold thin film of 10 nanometers by the method for magnetron sputtering on the surface of transparent substrates polymethyl methacrylate (PMMA).
2) gold atom can agglomerate into nano-particle PMMA surface is spontaneous.
3) single-layer graphene film is obtained by chemical vapour deposition technique in copper foil surface growth.
4) FeCl is utilized3Etching Copper Foil, and by the method for polymethyl methacrylate (PMMA) secondary transfer, Graphene is transferred to surface and has the PMMA surface of gold nano grain.
5) under room temperature be dried can obtain compound transparent conducting thin film.

Claims (7)

1. the preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle, it is characterised in that comprise the steps:
1) at the metallic film of transparent substrates surface deposition 2-10 nanometer, due to surface can existence, metal can agglomerate into nano-particle substrate surface is spontaneous;
2) prepare Graphene, Graphene is transferred to nano grain surface, the laminated film with high light transmittance and electric conductivity can be obtained.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 1, it is characterised in that described step 1) and step 2) between also have a 300-500oThe process of C heat treated.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 1, it is characterised in that in described step 1), the material of metallic film is gold, silver, copper or aluminum.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 1, it is characterised in that in described step 1), described transparent substrates is to have the thin film of light transmission.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 4, it is characterised in that described transparent substrates is glass, PET or PMMA.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 1, it is characterised in that in described step 1), the deposition process of metallic film is heat evaporation, magnetron sputtering or electron beam evaporation plating.
The preparation method of the compound transparent conducting thin film of Graphene-metal nanoparticle the most according to claim 1, it is characterised in that described step 2) in Graphene be by mechanically pulling off method, chemical vapour deposition technique, liquid phase stripping method or graft process prepare.
CN201610215165.XA 2016-04-08 2016-04-08 Preparation method of graphene-metal nanoparticle composite transparent conductive film Pending CN105869773A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108990260A (en) * 2018-09-21 2018-12-11 江西新正耀光学研究院有限公司 Light transmission circuit board structure, circuit board and light transmission route board fabrication method
CN109877342A (en) * 2019-03-26 2019-06-14 中国科学技术大学 A kind of amorphous noble metal nano-plate and preparation method thereof
CN114921190A (en) * 2022-06-08 2022-08-19 中国空气动力研究与发展中心设备设计与测试技术研究所 Flexible photo-thermal super-hydrophobic composite anti-icing film and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012234796A (en) * 2011-04-20 2012-11-29 Nitto Denko Corp Method of producing conductive laminated film
CN102938262A (en) * 2012-11-20 2013-02-20 上海交通大学 Transparent conducting thin film and preparation method thereof
CN102947952A (en) * 2010-06-23 2013-02-27 吉坤日矿日石能源株式会社 Photoelectric conversion element
CN105132883A (en) * 2015-08-24 2015-12-09 常州二维碳素科技股份有限公司 Methods for adjusting and controlling graphene film electronic structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102947952A (en) * 2010-06-23 2013-02-27 吉坤日矿日石能源株式会社 Photoelectric conversion element
JP2012234796A (en) * 2011-04-20 2012-11-29 Nitto Denko Corp Method of producing conductive laminated film
CN102938262A (en) * 2012-11-20 2013-02-20 上海交通大学 Transparent conducting thin film and preparation method thereof
CN105132883A (en) * 2015-08-24 2015-12-09 常州二维碳素科技股份有限公司 Methods for adjusting and controlling graphene film electronic structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108990260A (en) * 2018-09-21 2018-12-11 江西新正耀光学研究院有限公司 Light transmission circuit board structure, circuit board and light transmission route board fabrication method
CN109877342A (en) * 2019-03-26 2019-06-14 中国科学技术大学 A kind of amorphous noble metal nano-plate and preparation method thereof
CN114921190A (en) * 2022-06-08 2022-08-19 中国空气动力研究与发展中心设备设计与测试技术研究所 Flexible photo-thermal super-hydrophobic composite anti-icing film and preparation method thereof
CN114921190B (en) * 2022-06-08 2024-02-06 中国空气动力研究与发展中心设备设计与测试技术研究所 Flexible photo-thermal super-hydrophobic composite anti-icing film and preparation method thereof

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