CN105846902A - Method for controlling amplifying unit including variable optical attenuator and semiconductor optical amplifier - Google Patents
Method for controlling amplifying unit including variable optical attenuator and semiconductor optical amplifier Download PDFInfo
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- CN105846902A CN105846902A CN201610064995.7A CN201610064995A CN105846902A CN 105846902 A CN105846902 A CN 105846902A CN 201610064995 A CN201610064995 A CN 201610064995A CN 105846902 A CN105846902 A CN 105846902A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
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Abstract
A method to control an amplifying unit including a variable optical attenuator VOA and a semiconductor optical amplifier SOA is disclosed. The method first sets the attenuation of the VOA in a value realizable in the VOA and the optical gain of the SOA in a value where the SOA may operate in an optimum range. The method then gradually reduces the attenuation of the VOA as detecting the intensity of the beam output from the amplifying unit. When the intensity is still less than a target one even when the VOA shows no attenuation, the optical gain of the SOA is gradually increased to a value by which the intensity of the output beam becomes the target one.
Description
Technical field
The present invention relates to a kind of control include variable optical attenuator (VOA) and be arranged on
The semiconductor optical amplifier (SOA) in the downstream of VOA is in the method for interior optical device.
Background technology
Optical communication system is sometimes provided with and includes between optical transmitting set and optical receiver
The optical device of SOA.The intensity of the input beam provided from optical transmitting set is detected
This optical device regulation or control SOA, thus strong by the output beam that amplified by SOA
Degree is set as target strength, and this is commonly referred to automated power control (APC).Because input
The intensity of light beam changes in time, so equipment makes input beam decay sometimes, and then profit
With image intensifer, the light beam after decay is amplified to target strength.
Japanese Patent Laid application publication No.H08-248455A discloses a kind of optics and sets
Standby, this optical device includes front amplifier；Rear amplifier；VOA, it is placed in two and puts
Between big device；First photodetector, it is for detecting the amplification light beam of amplifier output in the past
Intensity；Second photodetector, the intensity of its decay light beam exported from VOA for detection；
And the 3rd photodetector, its export from rear amplifier for detection another amplify light beam
Intensity.
Optical device disclosed herein is based on from the first photodetector to the 3rd photodetector
Output regulate the gain of light of respective amplifier and the decay of VOA.Because to respectively from putting
In big device and VOA, the corresponding light beam of output is detected, so for by output beam
This optical device that intensity settings is target strength in, inevitably need complexity
Calculate.Additionally, be equipped with plural detector to cause the expansion of housing.
Summary of the invention
An aspect of of the present present invention relates to a kind of control and includes variable optical attenuator (VOA) and half
The method of the amplifying unit of conductor image intensifer (SOA).The method comprises the steps:
Set the predetermined decay in VOA；Set the predetermined gain of light in SOA；And by subtracting
The intensity settings of the light beam amplified by SOA is target strength by the decay of little VOA.This
The method of invention is characterized in that: (1) predetermined decay is can to realize in VOA
Big decay；And (2) predetermined gain of light is so that SOA can operate in optimum range
Gain.
Another aspect of the present invention relates to one and includes variable optical attenuator (VOA), partly leads
Body image intensifer (SOA) and the Optical Amplifier Unit of controller.VOA receives input beam also
Output attenuatoin light beam.SOA receiving attenuation light beam also exports amplification light beam.Controller can set
Determine the predetermined decay in VOA so that VOA output there is no the decay light beam of intensity,
And controller can set the predetermined gain of light in SOA so that SOA can be most preferably
Range of operation.Controller reduces the decay of VOA after providing input beam to VOA,
And regulate the gain of light of SOA to set the target strength amplified in light beam.
Accompanying drawing explanation
With reference to accompanying drawing, by reading the described in detail below of the preferred embodiments of the present invention, will
It is better understood when above and other purpose, aspect and advantage, wherein:
Fig. 1 schematically shows the optical system of the optical module equipped with the present invention；
Fig. 2 shows the functional block diagram of optical module；
Fig. 3 shows the plane graph within optical module；
Fig. 4 shows the cross-sectional view of the optical module that the line of appearance is intercepted in Fig. 3；
Fig. 5 is the flow chart for operating optical module according to a first embodiment of the present invention；
Fig. 6 shows bias current and the light amplification of the image intensifer supplied to optical module
Typical relation between the gain of light of device；
Fig. 7 shows another optical module that the optical module with the present invention carries out contrasting
Functional block diagram；
Fig. 8 is the flow chart for operating the optical module according to the second embodiment；And
Fig. 9 shows from variable optical attenuator (VOA) and semiconductor optical amplifier (SOA)
The operating condition of the optical strength of output.
Detailed description of the invention
It follows that some embodiments of the present invention will be described with reference to accompanying drawing.At accompanying drawing
Description in, will represent mutually the same or similar by mutually the same or similar reference
Parts, and do not do repeat specification.
First embodiment
Fig. 1 schematically shows the exemplary of the Optical Amplifier Unit 1 according to first embodiment
Application.The Optical Amplifier Unit 1 being folded between optical transmitting set 2 and optical receiver 3 includes joining
Have the optical fiber 4 of optical connector 4a and equipped with another of another optical connector 5a
Optical fiber 5.Optical connector 4a is with the light being attached at from the optical fiber that optical transmitting set 2 extends even
Connect device 6a coordinate, and optical connector 5a be attached at the optical fiber 7 extended from optical receiver 3
On optical connector 7a coordinate.Optical Amplifier Unit 1 can receive export from optical transmitting set 2 and
The optical signal provided via optical fiber 4 and 6；And carry to optical receiver 3 via optical fiber 5 and 7
For the optical signal after amplifying.
Fig. 2 schematically shows the functional block diagram of optical device 30.Optical device 30 wraps
Include Optical Amplifier Unit 1, this Optical Amplifier Unit 1 include semiconductor optical amplifier (SOA) 13,
Variable optical attenuator (VOA) 12, beam splitter 14 and photodetector 15.VOA 12 receives
From the input beam L1 of optical transmitting set 2, and output attenuatoin light beam L2.SOA 13 receives
Decay light beam L2 also outwards exports amplification light beam L3 via beam splitter 14.
VOA 12 can make input beam L1 by absorbing a part of input beam L1
Decay, and include on semiconductor substrate semiconductor laminated, wherein, semiconductor laminated include
Such as under-clad layer, damping layer, top covering and contact layer.Contact layer is provided with and is positioned at contact layer
Top on and for damping layer provide bias electrode.Damping layer can include Multiple-quantum
Trap (MQW) structure.Damping layer is according to causing in damping layer and by inclined to electrode of supply
The electric field that swaging becomes changes the absorptance of damping layer.Specifically, when above-mentioned top covering
With under-clad layer there is corresponding conduction type different from each other and time damping layer is negatively biased, declining
Subtracting and cause powerful electric field in layer, this can revise band gap and change the absorption of damping layer
Coefficient.Therefore, VOA 12 can show variable light decay according to the bias applying electrode
The function subtracted.
SOA 13 can also include the quasiconductor shared with the semiconductor substrate for VOA 12
Semiconductor laminated on substrate, wherein, SOA semiconductor laminated can include under-clad layer,
Amplification layer, top covering, contact layer and electrode.Amplification layer can have MQW structure, and
And can also have the material different from the material of the MWQ in VOA 12.By at SOA
Insert passivation layer between contact layer and the contact layer of VOA 12 in 13 to make in SOA 13
Contact layer physically separates with the contact layer of VOA 12.Passivation layer can be by including silicon oxide
Insulant make.Top covering and under-clad layer also have conduction type different from each other, with
In top covering and under-clad layer, form p-i-n junction, and the amplification layer of intrinsic type be by positive bias,
Make amplification layer can show the gain of light.
It addition, controller 21 shown in figure 2 controls VOA 21 and SOA 13.Example
As, the attenuation settings of VOA 12 is predetermined value by controller 21, and this predetermined value is such as may be used
With the maximum attenuation realized in VOA 12.Controller 21 is examined according to by photodetector 15
The intensity of the amplification light beam L3 measured starts to reduce the decay of VOA 12 from maximum attenuation.
After setting the gain of light of image intensifer 13, perform the control to VOA 12, to subtract
The decay of little VOA 12.In other words, the gain of light of SOA 13 is set as by controller 21
SOA 13 is made to show the value of stable amplification.Specifically, in the control of controller 21
Under, the gain of light of SOA 13 is set at most 15dB.
Additionally, strong according to the output beam L3 detected by photodetector 15 of controller 21
Degree starts to be adjusted the gain of light of SOA 13 from above-mentioned predetermined gain.Specifically,
The predetermined gain of SOA 13 is set to 5dB to 15dB.Even if additionally, in predetermined gain
In the case of being set to 15dB, when the intensity amplifying light beam L3 becomes deficiency, control
Device can also increase the gain of light in the range of 16dB to 20dB.Control at VOA 12
Afterwards, the control of the gain of light can be performed.
Controller 21 can will amplify light by the control of above-mentioned VOA 12 and SOA 13
The intensity settings of bundle L3 is target strength.Target strength depends on the optical receiver shown in Fig. 1
The input sensitivity of 3, or can be according to the input sensitivity of the optical receiver 3 shown in Fig. 1
It is determined.
It follows that with reference to Fig. 3 and Fig. 4 details to the Optical Amplifier Unit 1 according to embodiment
It is described.Fig. 3 shows the plane graph within Optical Amplifier Unit 1, and Fig. 4 illustrates
The cross-sectional view intercepted along the line IV-IV shown in Fig. 3.The Optical Amplifier Unit 1 of the present invention
Including the housing 40 that VOA 12 and SOA 13 is closed, front coupling unit 41 and after
Coupling unit 42.
Housing 40 has box shape, this box shape include sidepiece 40a relative to each other and
40b and other sides being connected with both of the aforesaid sidepiece 40a and 40b the most toward each other and respectively
Portion 40c and 40d.Therefore, the housing 40 of four sidepiece 40a to 40d formation box shape.
Housing 40 is additionally provided with bottom 40i and top 40j.In addition to the 40i of bottom, housing 40
Can be by alloy (frequently referred to Ke such as containing ferrum (Fe), nickel (Ni) and cobalt (Co)
Cut down (Kovar)) make.Bottom 40i can by the alloy containing tungsten (W) (such as,
Copper tungsten (CuW)) make.Sidepiece includes front surface 40e, and front coupling unit 41 is assembled
To this front surface 40e.Sidepiece 40a is additionally provided with open front 40g, and frontal lens 43 is assembled
In this open front 40g.The front optical axis D1 extended from SOA 13 passes open front 40g
In frontal lens 43.Rear lateral portion 40b includes the rear surface 40f being provided with after-opening 40h, after
Lens 44 are engaged in this after-opening 40h.The same rear light extended from SOA 13
Axle D2 is through the rear lens 44 in after-opening 40h.Because SOA 13 is set to and optical axis
D1 and D2 oblique, optical axis D1 before optical axis D2 deviation after institute.In other words, optical axis D1
The corresponding normal of the frontal plane 13a and back plane 13b that are respectively relative to SOA 13 with D2 inclines
Tiltedly.
In addition to VOA 12 and SOA 13, housing 40 is also by sub-carrier 45, collimation thoroughly
Mirror 46 and 47, critesistor 48, carrier 49a and 49b and thermoelectric (al) type cooler (TEC)
T is closed.TEC T via carrier 49b be provided with sub-carrier 45, front collimating lens 46,
Rear collimating lens 47 and critesistor 48, SOA 13 is arranged on sub-carrier 45.
VOA 12 is physically independent of SOA 13, and it is saturating with front collimation to be placed in frontal lens 43
Between mirror 46.In other words, the back plane 12b of VOA 12 and front collimating lens 46 optical coupling.
VOA 12 is arranged on the bottom 40i of housing via carrier 49a.
SOA 13 is arranged between front collimating lens 46 and rear collimating lens 47, and is provided with
Frontal plane 13a and back plane 13b.Frontal plane 13a is via front collimating lens 46 and VOA 12
With front coupling unit 41 optical coupling, and back plane 13b is via rear collimating lens 47 and rear coupling
Close part 42 optical coupling.As it has been described above, the frontal plane 13a and back plane 13b of SOA 13
Form certain angle relative to optical axis D1 and D2, enter and before SOA 13 with suppression
At plane 13a, reflected light is back to front coupling unit 41, and suppresses from SOA's 13
The light of back plane 13b output is back to SOA 13.
The sub-carrier 45 being provided with SOA 13 can be formed by such as aluminium nitride (AIN).
Carrier 49b is provided with sub-carrier 45, front collimating lens 46, rear collimating lens 47 and temperature-sensitive
Resistance 48.TEC T can be Peltier (Peltier) device.Critesistor 48 can lead to
The temperature crossing carrier 49b top senses the temperature of SOA 13 indirectly.Therefore, temperature-sensitive electricity
Resistance 48 is preferably located to as close possible to SOA 13.
Sidepiece 40d is provided with terminal 50, is formed with multiple interconnection portion 52a on this terminal 50
To 52d.Interconnection portion 52a to 52h and TEC T, VOA 12, SOA 13 and critesistor
48 electrical connections.Terminal 50 is additionally provided be connected with interconnection portion 52a to 52h respectively multiple and draws
Foot 53a to 53h.With reference to Fig. 3, some pins in pin 53a to 53h transmit for VOA
The control signal of 12 and SOA 13.VOA 12, SOA 13 and critesistor 48 are via phase
The pin 53a to 53h answered and external connection.Terminal 50 can be made up of pottery, and interconnects
Portion 52a to 52h can be made up of the metal mainly containing gold (Au).
Front coupling unit 41 can be made of stainless steel and be soldered to the front surface of housing 40
40e, and allow the front optical axis D1 extended from the frontal plane of SOA 13 to pass.Front coupling
Part 41 can be to receive the optical plug of optical ferrule pluggablely, and this optical ferrule is attached
With in the end of the external fiber of VOA 12 optical coupling.Front coupling unit 41 includes plug
61 and the optical cable 62 of fixing external fiber.Plug 61 is via VOA 12 and frontal lens optocoupler
Close.Plug 61 can be made up of pottery, and this plug 61 is by the external fiber in optical cable 62
Optics with frontal lens 43 optical alignment.
Rear coupling unit 42 has center and rear tubular consistent for optical axis D2 and is soldered to shell
On the rear surface 40f of body 40, rear coupling unit 42 allows the back plane 13b from SOA 13
The rear optical axis D2 extended passes.Rear coupling unit 42 includes another plug 63, another
Individual external fiber coupled to this plug 63.
It follows that by the reference Fig. 5 amplifying unit 1 to operating according to embodiments of the present invention
Method is described, and Fig. 5 is the flow chart of the method for operation amplifying unit 1.
First, controller 21 performs first step S1: by such as supplying to VOA 12
The attenuation settings of VOA 12 is predetermined value by bias.In this step S1, VOA 12
Decay be set to the maximum that can realize in VOA 12, and to VOA 12
The bias of supply is the reverse biased for damping layer.Additionally, the gain of light of SOA 13 is preferred
Be set to and be substantially zero.Therefore, pre-for VOA 12 set in step sl
Fixed decay and the combination for the predetermined gain of SOA 13 preferably make to amplify light beam L3
Become the respective amount of the intensity that can not be detected by photodetector 15.For SOA 13
In this case, do not have electric current to flow in SOA 13, thus do not produce arbitrary amplification
Spontaneous emission (ASE).
In step s 2, process provides the input beam L1 of high intensity with backward VOA 12.
Because the decay of VOA 12 is set to maximum in step sl, so all of input
At least most of of light beam L1 or input beam L1 is absorbed by VOA 12 or blocks.
In step s3, the gain of light of SOA 12 is set as predetermined gain by third step.
Such as, the bias current supplied in preset range to SOA 13, controller 21 sets SOA
The gain of light of 13.Fig. 6 shows when SOA 13 reception has the input beam of constant intensity
Time supply to SOA 13 bias current (it is shown in transverse axis), export from SOA 13
Amplify the light intensity (it is corresponding with left vertical) of light beam and efficiency (its of the gain of light
On the right shown in the longitudinal axis) the example of relation.This efficiency can be by the gain of light and bias plasma
The ratio of stream determines, i.e. the slope of the relation between the gain of light and bias current, generally may be used
To obtain this slope at the gain of light of 0dB.In the example shown in Fig. 6,0dB's
Maximal efficiency at the gain of light is about 0.7 [dB/mA].According to Fig. 6, bias current is set as
In the range of 30mA to 70mA, SOA 13 shows 80% with maximal efficiency inherently
The gain of light to 5dB to 15dB corresponding to the efficiency of 20%.
Then, in step s 4, whether the intensity processing inspection amplification light beam L3 exceedes mesh
Mark intensity.When intensity is less than target strength, in step s 5, controller 21 is based on light
The detection of detector 15 reduces the decay of VOA 12.Iterative step S4 and step S5,
The intensity amplifying light beam L3 is made to reach target strength.
On the other hand, when the intensity amplifying light beam L3 in step s 4 exceedes target strength,
Controller 21 regulates the gain of light of SOA 13 in step s 6, i.e. controller is utilizing light
The gain of light of SOA 13 is reduced while the intensity of detector 15 detection amplification light beam L3.
The control of the gain of light of SOA 13 is referred to as automated power control (APC).
By by being compared to describe the excellent of optical equipment 30 with conventional layout to equipment 30
Point.Fig. 7 is to carry out the functional block diagram of the optical device contrasted with the optical device shown in Fig. 2.
The amplifying unit 100 that optical device 130 includes also includes the most independent VOA
12 and SOA 13.Optical device 130 also includes beam splitter 101 to 103 and detects as light
The photodiode (PD) 104 to 106 of device.Oneth PD detector 104 detection is split
The intensity of the input beam L1 that device 101 separates.2nd PD detector 105 detects by second
The intensity of the decay light beam L2 that beam splitter 102 separates.3rd PD detector 106 detects quilt
The intensity of the amplification light beam L3 that the 3rd beam splitter 103 separates.Controller 21 is based on from PD
The output of 104 to 106 controls decay and the gain of light of SOA 13 of VOA 12.With this
The bright layout shown in Fig. 2 is similar to, and the layout shown in Fig. 7 can will amplify the strong of light beam L3
Degree is set to target strength, but the layout shown in Fig. 7 also includes two PD 104,105 and
The additional optical of two beam splitters 101,102, this causes the expansion of housing.Additionally,
Controller 21 needs the process using the output of three PD 104 to 106 to process complexity.
On the other hand, arrangement according to the invention and process, even if when optical device 30 omits
During first beam splitter 101 and a PD 104 in the comparative example shown in Fig. 7, optics sets
Standby 30 can also be come easily by the gain of light of the decay of regulation VOA 12 and SOA 13
It is target strength by the intensity settings of amplification light beam L3.In other words, optical device 30 is permissible
The intensity amplifying light beam L3 is regulated merely with beam splitter 14 and photodetector 15.
When being first can be in VOA 12 by the attenuation settings of VOA 12 in step S 1
The maximum of realization time, photodetector 15 does not sense arbitrary beam, and this can stop control
Device 21 starts to control the process of optical device 30.In step sl by the decay of VOA 12
After being set as maximum, can provide input beam L1 to VOA 12, this can adjust
It is effectively prevented decay light beam during the gain of light of joint SOA 13 to enter in SOA 13.Cause
This, can be effectively prevented and provide the amplification light with excessive intensity to external optical receiver 3
The state of bundle.
Furthermore, it is possible to provide input beam L1 after step S1 but before step S2.
This order can be effectively prevented and not declined by VOA 12 during the gain of light of regulation SOA 13
The light beam L2 subtracted enters in SOA 13, and this can also prevent amplifying unit 1 from providing high-strength
The amplification light beam of degree.The decay set by VOA 12 in step sl can be can be
The maximum attenuation realized in VOA 12, thus do not provide light beam from VOA 12.
Similar with the method for the second embodiment hereinafter described, for controlling according to the first enforcement
The method of the optical device 30 of example includes: step S1, and it is for setting the decay of VOA 12
It is set to higher value, it is preferable to set for the maximum attenuation that can realize in VOA 12；Step
Rapid S3, it is for being set as operating SOA in optimum range by the gain of light of SOA 13
The value of 13；Step S5, it is for reducing VOA 12 according to the detection of photodetector 15
Decay, the intensity settings of the amplification light beam L3 will export from amplifying unit 1 is strong for target
Degree；And step S4, it is for increasing SOA 13 when the decay of VOA 12 becomes zero
The gain of light, i.e. VOA 12 decays, but amplify light beam L3 intensity still
Less than target strength.Therefore, amplifying unit 1 can export the light beam L3 with target strength.
Second embodiment
It follows that by description control amplifying unit 1 according to the second embodiment of the present invention
Another method.
Fig. 8 shows the flow chart of the method according to the second embodiment.Defeated from SOA 13
The intensity of the amplification light beam L3 gone out less than target strength time, the second embodiment step S4 it
Whether rear inspection: VOA 12 is set as attenuation state, wherein, and the attenuation state of VOA 12
Represent that VOA 12 makes input beam L1 decay practically, i.e. the intensity of decay light beam L2
Intensity less than input beam L1.Decay practically when VOA 12 makes input beam L1 (
Step S11 is the situation of "No") time, process and perform step S5, to reduce VOA 12
Decay, the most in step s 4 check amplify light beam L3 intensity.
When VOA 12 does not make input beam L1 decay, i.e. when the decay of VOA 12
When being zero (corresponding with the "Yes" in step S11), process and utilizing photodetector 15 to examine
Make the gain of light of SOA 13 from predetermined value in step s 12 while the intensity of the big light beam of measuring
Start to increase.When needing the gain of light reducing SOA 13, process and perform step S6.
Described method according to the second embodiment has the advantage obtained with first embodiment
Similar advantage.Additionally, the intensity that ought amplify light beam L3 in step s 12 becomes smaller than mesh
Mark intensity and VOA 12 are when being set to be in unattenuated state, by the light by SOA 13
Gain is set as exceeding the predetermined gain set in step s3, amplifies the intensity of light beam L3
Can be set to close or equal to target strength.
The intensity amplifying light beam L3 can be provided in the photodiode in optical receiver 3
(PD) (not shown in figures) detection.In this arrangement, even if working as optical device
30 when eliminating photodetector 15, and controller 21 can also be based on the PD in optical receiver 3
Output regulate the gain of light and the decay of VOA 12 of SOA 13.
Table below shows according to step S1 to S6, the reality of the control of S11 and S12
Example.Form shows decay ATT, SOA of intensity Pin of input beam L1, VOA 12
The gain of light G of 13 and intensity Pout of amplification light beam L3, wherein, perform control to put
Intensity Pout of big light beam L3 remains target strength for-5dBm in this example.Can
It is-30dB with the maximum attenuation of realization in VOA 12.For SOA 13, in step
The optional gain of light set in S3 is as 15dB, and can set in SOA 13
The maximum gain of light is 20dB.
Table 1
Fig. 9 shows the fortune of the intensity of the corresponding light beam L1 to L3 through amplifying unit 1
Turn state.In fig .9, the longitudinal axis represents the intensity of light beam, and transverse axis represents position, wherein,
Region between P1 with P2 is corresponding with VOA 12, and another region between P3 and P4
It is SOA 13.Input beam L1 enters VOA 12 at the P1 of position, and the light beam L2 that decays
It is output at the P2 of position, and at the P3 of position, enters SOA 13.At the P4 of position defeated
Go out to amplify light beam L3.Operating condition a to h is corresponding with the situation a to h listed by table 1.
Such as, operating condition h in Fig. 9 enters VOA 12 with the intensity of 10dBm, and
-20dBm is decayed to by VOA 12.With reference to Fig. 5 and Fig. 7, because the gain of light of SOA 13
It is set to 15dB, so the amplification light beam L3 of operating condition h has as amplifying
The intensity of-the 5dBm of the target strength of unit 1.
For enter operating condition d of VOA 12 with the intensity of-10dBm, because permissible
The maximum attenuation realized in SOA 12 is-30dB, so VOA 12 makes in step s3
This operating condition d decays to-40dBm.For operating condition d, light increases in step s3
Benefit is set to the SOA 13 of 15dB can export the amplification light of the intensity with-25dBm
Restrainting, the target strength needed for this strength ratio amplifying unit 1 is little.In this case, step
The decay of VOA 12 is decreased to-10dB by S5, and then, SOA 13 can export to be had
The amplification light beam L3 of the target strength of-5dBm.
For there is operating condition a of intensity of-25dBm because VOA 12 for the time being by
It is set as the maximum attenuation of-30dB that can realize in VOA 12, so in step S3
This input beam L1 can be decayed to-55dBm by middle VOA 12.In this case, when
When the gain of light of SOA 13 is set to 15dB in step s 4, SOA 13 can export
Having the amplification light beam L3 of the intensity of-40dBm, this intensity is much smaller than target strength.Then,
The decay of VOA 12 is reduced while the intensity of light beam L3 is amplified in monitoring by controller 21
To 0dB.Even if when VOA 12 is set to be in unattenuated state (that is, the decay of 0dB)
Time, SOA 12 can also export the amplification light beam L3 only with-10dB.Then, in step
In S12, the gain of light of SOA 13 can be increased to 20dB by controller 21, and amplifies
Unit 1 can export the amplification light beam L3 of the target strength with-5dBm.
Although being described herein each particular implementation of the present invention for purposes of illustration
Example, but those skilled in the art would be apparent to many modifications and variations.Such as, though
So embodiment is sequentially performed step S1 and step S2, but can also perform these steps simultaneously
Rapid S1 and S2.Additionally, the decay of the VOA 12 set in step sl be assumed to be can
With the decay realized in VOA 12.But, this decay it be not necessary for can be at VOA 12
The decay of middle realization.First the decay set in VOA 12 can be at least equal to can be real
Existing value, can be maybe the value that can operate SOA 13 in best region.Furthermore, it is possible to
By VOA 12 being assembled in the temperature controlling VOA 12 on other parts, such as, can
VOA 12 is arranged on extra TEC via carrier 49a.Therefore, appended right
Require to be intended to contain these type of amendments all falling in true spirit and scope of the present invention and become
Change.
Claims (14)
1. a control includes the amplifying unit of variable optical attenuator and semiconductor optical amplifier
Method, described method comprises the steps:
Setting the predetermined decay in described variable optical attenuator, described predetermined decay is can be
The maximum attenuation realized in described variable optical attenuator；
Described semiconductor light is set by amplifying bias to described semiconductor optical amplifier supply
The predetermined gain of light in amplifier, described semiconductor optical amplifier can increase at described predetermined light
Operation in optical range near benefit；And
By reducing the decay of described variable optical attenuator by by described semiconductor optical amplifier
The intensity settings of the light beam amplified is target strength.
Method the most according to claim 1,
Wherein, the step setting described intensity comprises the steps: by described semiconductor light
The described intensity of the described light beam that amplifier amplifies detects.
Method the most according to claim 1,
Even if also comprising the steps: to be set to be at described variable optical attenuator does not wanes
In the case of subtracting state, when described in the described light beam amplified by described semiconductor optical amplifier
When intensity is still less than described target strength, increase the gain of light of described semiconductor optical amplifier.
Method the most according to claim 1,
Wherein, setting the step of described predetermined decay, to comprise the steps: that setting makes described
Variable optical attenuator does not the most allow the decay that light beam passes.
Method the most according to claim 1,
Wherein, the step of the described predetermined gain of light setting described semiconductor optical amplifier includes
Following steps: set and described semiconductor optical amplifier can be operated in optimum range
Gain.
Method the most according to claim 5,
Wherein, the step setting the described predetermined gain of light comprises the steps: partly to lead described
The gain of body image intensifer is set in semiconductor optical amplifier described at the gain of light of 0dB
In the range of the 20% to 80% of the maximal efficiency of the gain of light and the ratio of bias current.
Method the most according to claim 1,
Also comprise the steps: the described predetermined decay in setting described variable optical attenuator
Step after but in the step of the described predetermined gain of light set in described semiconductor optical amplifier
Before Zhou, provide input beam to described variable optical attenuator.
8. receive input beam and export the Optical Amplifier Unit amplifying light beam, including:
Variable optical attenuator, it receives described input beam output attenuatoin light beam；
Semiconductor optical amplifier, it receives described decay light beam and exports described amplification light beam；
And
Controller, it sets the predetermined decay in described variable optical attenuator and described quasiconductor
The predetermined gain of light in image intensifer, at described predetermined decay, described variable optical attenuator
Output there is no the described decay light beam of intensity, at the described predetermined gain of light, described
Semiconductor optical amplifier can operate in optimum range.
Optical Amplifier Unit the most according to claim 8,
Wherein, described variable optical attenuator and described semiconductor optical amplifier are formed on
On the semiconductor substrate shared.
Optical Amplifier Unit the most according to claim 8,
Wherein, described variable optical attenuator is reversely biased, and described semiconductor optical amplifier
By positive bias.
11. Optical Amplifier Units according to claim 8,
Also include the photodetector detecting the intensity of described amplification light beam,
Wherein, described controller is controlled by the described intensity only receiving described amplification light beam
The decay of described variable optical attenuator and the gain of light of described semiconductor optical amplifier.
12. Optical Amplifier Units according to claim 8,
Wherein, described controller the described predetermined decay of the described variable optical attenuator set
It it is the maximum attenuation that can realize in described variable optical attenuator.
13. Optical Amplifier Units according to claim 8,
Wherein, the described predetermined gain of light of described semiconductor optical amplifier and the gain of light and supply
Maximal efficiency 20% to 80% right of ratio to the bias current of described semiconductor optical amplifier
Should.
14. Optical Amplifier Units according to claim 13,
Wherein, described maximal efficiency is the efficiency at the gain of light of 0dB.
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| JP2015-017575 | 2015-01-30 | ||
| JP2015017575A JP6485901B2 (en) | 2015-01-30 | 2015-01-30 | Control method of optical device |
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| CN105846902B CN105846902B (en) | 2019-02-22 |
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| CN106226972A (en) * | 2016-08-31 | 2016-12-14 | 武汉光迅科技股份有限公司 | A kind of semiconductor optical amplifier operation control method and system |
| CN111355116A (en) * | 2020-03-18 | 2020-06-30 | 中国工程物理研究院激光聚变研究中心 | System and method for laser energy control |
| CN111463647A (en) * | 2020-03-31 | 2020-07-28 | 武汉光迅科技股份有限公司 | Optical amplifier and adjusting method thereof |
| US11070293B2 (en) | 2017-09-21 | 2021-07-20 | Zte Corporation | Method and device for amplifying uplink light of passive optical network, and storage medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6919291B2 (en) * | 2017-04-11 | 2021-08-18 | 住友電気工業株式会社 | Optical receiver and control method of optical receiver |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP6485901B2 (en) | 2019-03-20 |
| JP2016143734A (en) | 2016-08-08 |
| CN105846902B (en) | 2019-02-22 |
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