CN105846514A - Battery protection based solar energy power supply building energy-saving monitoring system - Google Patents
Battery protection based solar energy power supply building energy-saving monitoring system Download PDFInfo
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- CN105846514A CN105846514A CN201610364400.XA CN201610364400A CN105846514A CN 105846514 A CN105846514 A CN 105846514A CN 201610364400 A CN201610364400 A CN 201610364400A CN 105846514 A CN105846514 A CN 105846514A
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- effect transistor
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00302—Overcharge protection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/00306—Overdischarge protection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention discloses a battery protection based solar energy power supply building energy-saving monitoring system. The system is characterized by mainly comprising a photovoltaic power generation system, and a building detection system connected with the photovoltaic power generation system, wherein the photovoltaic power generation system comprises a solar photovoltaic battery pack, an overcharging protection circuit connected with the solar photovoltaic battery pack, a storage battery connected with the overcharging protection circuit, an over-discharging protection circuit connected with the storage battery, and the like; and an inverter system is connected with a processing module. The solar energy power supply building energy-saving monitoring system is provided with the over-discharging protection circuit; the over-discharging protection circuit can prevent the voltage value of the storage battery from exceeding the final voltage value in the discharging process, as well as can avoid influence on the service life of the storage battery caused by reversible damage of the positive electrode active material and the negative electrode active material due to increasing of the internal voltage of the battery; and in addition, the solar energy power supply building energy-saving monitoring system is provided with the overcharging protection circuit; and the overcharging protection circuit can carry out charging protection on the storage battery to prevent the storage battery from being damaged caused by overcharging.
Description
Technical field
The present invention relates to a kind of building monitoring system, specifically refer to a kind of based on battery protection solar powered
Building energy saving monitoring system.
Background technology
At present, the energy consumption of building remains high, very big to the load of electrical network, in short supply along with conventional energy resource,
The utilization of solar energy is gradually paid attention to, and it is considered as new forms of energy skill the most promising in the world today
Art.If solar energy can be made full use of in building monitoring system, thus reduce the dependence to electrical network, then may be used
To save substantial amounts of electric power.
Summary of the invention
It is an object of the invention to overcome existing building monitoring system to utilize electrical network to power and waste lacking of mass energy
Fall into, it is provided that a kind of solar powered building energy saving based on battery protection monitoring system.
The purpose of the present invention is achieved through the following technical solutions: a kind of solar powered building based on battery protection
Space energy-saving monitoring system, mainly by photovoltaic generating system, the building detection being connected with photovoltaic generating system is
System composition；Described photovoltaic generating system, by solar-energy photo-voltaic cell group, is connected with solar-energy photo-voltaic cell group
Additives for overcharge protection circuit, the accumulator being connected with additives for overcharge protection circuit, the mistake being connected with accumulator
Discharge protection circuit, and the inversion system composition being connected with over-discharge protection circuit；Described building detect
System is then by processing module, the bin being connected with processing module respectively, temperature sensor, humidity sensor
Device, Smoke Sensor and alarm composition；Described inversion system is then connected with processing module.
Further, described additives for overcharge protection circuit by audion VT1, audion VT2, amplifier P1,
Amplifier P2, N pole is connected with the emitter stage of audion VT1, P pole then after resistance R13 with audion
Diode D11, the N pole that the colelctor electrode of VT2 is connected is connected with the colelctor electrode of audion VT2, P pole
The diode D12 that then positive pole with amplifier P1 is connected after resistance R15, positive pole and audion VT1
The electric capacity C7 that base stage is connected, negative pole then positive pole with amplifier P1 is connected, be serially connected in audion VT1
Colelctor electrode and the P pole of diode D11 between resistance R14, be serially connected in the base stage of audion VT2 and put
Resistance R16, P pole between the outfan of big device P2 is connected with the outfan of amplifier P2, N pole is the most suitable
The secondary diode D14 being connected through resistance R18 emitter stage with audion VT2 after resistance R19, positive pole
Be connected with the negative pole of amplifier P2, the negative pole then electric capacity C8 of ground connection after resistance R17, and N pole with
The diode D13 composition that the negative pole of electric capacity C8 is connected, P pole then negative pole with amplifier P1 is connected；
The outfan of described amplifier P1 is connected with the colelctor electrode of audion VT1, its plus earth；Described amplification
The positive pole of device P2 is connected with the junction point of resistance R19 and resistance R18；The current collection of described audion VT2
Pole is then connected with solar-energy photo-voltaic cell group, its emitter stage is then connected with accumulator.
Described over-discharge protection circuit is by amplifier P, audion VT, field effect transistor MOS1, field effect transistor
MOS2, field effect transistor MOS3, field effect transistor MOS4, N pole after resistance R6 with field effect transistor MOS1
Source electrode be connected, the diode D7 of P pole ground connection, be serially connected in grid and the amplifier of field effect transistor MOS1
Potentiometer R7, N pole between the negative pole of P is connected with the drain electrode of field effect transistor MOS2, P pole is then through electricity
Diode D8, the N pole being connected with the drain electrode of field effect transistor MOS1 after resistance R8 and the collection of audion VT
Electrode be connected while the diode D9 that is then connected with the grid of field effect transistor MOS2 of ground connection, P pole,
Negative pole is connected with the P pole of diode D9, positive pole then after resistance R9 with the drain electrode of field effect transistor MOS1
The electric capacity C5 being connected, negative pole is connected with the emitter stage of audion VT, positive pole then with field effect transistor MOS1
The electric capacity C6 that is connected of drain electrode, one end is connected with the grid of field effect transistor MOS3, the other end is then through electricity
While being connected with the source electrode of field effect transistor MOS4 after resistance R12, the resistance R10 of ground connection, is serially connected in three poles
Resistance R11 between colelctor electrode and the grid of field effect transistor MOS4 of pipe VT, and N pole and field effect
The diode D10 that the drain electrode of pipe MOS3 is connected, P pole is then connected with the drain electrode of field effect transistor MOS4
Composition；The source electrode of described field effect transistor MOS1 is connected with accumulator, its drain electrode then with field effect transistor MOS3
Source electrode be connected；The source ground of described field effect transistor MOS2；The positive pole of described amplifier P and current potential
Device R7 controls that end is connected, its outfan then base stage with audion VT is connected；Described field effect transistor
The drain electrode of MOS3 is connected with the input of inversion system.
Described inversion system by transformator T, the inverter circuit being connected with the former limit inductance coil of transformator T,
And the voltage-stabilizing output circuit composition being connected with the secondary inductance coil of transformator T.
Described inverter circuit by processing chip U1, field effect transistor MOS, N pole after resistance R3 with transformator
The Same Name of Ends of the former limit inductance coil of T is connected, P pole is then steady with what the drain electrode of field effect transistor MOS3 was connected
Pressure diode D1, positive pole is connected with the N pole of Zener diode D1, the electric capacity C2 of minus earth, concatenation
Resistance R1 between the N pole of Zener diode D1 and the VCC pin processing chip U1, positive pole is through two
After the pipe D2 of pole with process chip U1 COMP pin be connected, negative pole then after resistance R4 with process core
The GND pin of sheet U1 be connected while the electric capacity C1 of ground connection, negative pole after resistance R2 with process chip
The VREF pin of U1 is connected, positive pole then after diode D3 source electrode with field effect transistor MOS be connected
The electric capacity C3 connect, is serially connected between ISET pin and the grid of field effect transistor MOS processing chip U1
Resistance R5, and P pole with process chip U1 OUT pin be connected, N pole then with field effect transistor MOS
Drain electrode be connected diode D4 composition；The RT/CT pin of described process chip U1 is with electric capacity C3's
Negative pole is connected, its VFB pin then negative pole with electric capacity C1 is connected；The leakage of described field effect transistor MOS
Pole is connected with the non-same polarity of the former limit inductance coil of transformator T.
Described voltage-stabilizing output circuit is by the secondary inductance coil of three-terminal voltage-stabilizing chip U2, P pole and transformator T
The Zener diode D5 that non-same polarity is connected, N pole then IN pin with three-terminal voltage-stabilizing chip U2 is connected,
P pole is connected with the Same Name of Ends of the secondary inductance coil of transformator T, N pole is then with three-terminal voltage-stabilizing chip U2's
GND pin be connected while the Zener diode D6 of ground connection, and positive pole is with three-terminal voltage-stabilizing chip U2's
The electric capacity C4 group that OUT pin is connected, negative pole then GND pin with three-terminal voltage-stabilizing chip U2 is connected
Become；The positive pole of described electric capacity C4 is all connected with processing module with negative pole.
Described process chip U1 is the integrated chip of UC3842, and three-terminal voltage-stabilizing chip U2 is then that LM317 is integrated
Chip.
The present invention compared with the prior art, has the following advantages and beneficial effect:
(1) present invention provides power supply by photovoltaic generation to building detecting system, and it takes full advantage of photovoltaic base
Plinth, reduces building operation cost, is suitable for being widely popularized.
(2) present invention is by the parameters in multichannel data sensor acquisition building, it is achieved that multiple monitoring
Work simultaneously, there is the detection comprehensive feature of data, improve intelligent building level.
(3) inversion efficiency of the inversion system of the present invention is the highest, and electric energy can be made to be fully utilized.
(4) present invention is provided with over-discharge protection circuit, and this over-discharge protection circuit is possible to prevent accumulator to exist
The final voltage value of its electric discharge is exceeded, it is to avoid accumulator causes intrinsic pressure rising, positive and negative electrode during electric discharge
The reversibility of active substance is damaged and is affected the life-span of accumulator.
(5) present invention is provided with additives for overcharge protection circuit, and accumulator can be carried out by this additives for overcharge protection circuit
Charge protection, it is to avoid accumulator is damaged because overcharging.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention.
Fig. 2 is the electrical block diagram of the inversion system of the present invention.
Fig. 3 is the over-discharge protection circuit structure chart of the present invention.
Fig. 4 is the structural representation of the additives for overcharge protection circuit of the present invention.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment
As it is shown in figure 1, based on battery protection the solar powered building energy saving monitoring system of the present invention, main
By the photovoltaic generating system for providing working power for detecting the building detection of the various parameter of floor to be
System composition.This building detecting system is arranged in each floor, and it is connected with photovoltaic generating system.
Described photovoltaic generating system is by solar-energy photo-voltaic cell group, the mistake being connected with solar-energy photo-voltaic cell group
Charge protector, the accumulator being connected with additives for overcharge protection circuit, the overdischarge being connected with accumulator
Protection circuit, the inversion system being connected with over-discharge protection circuit forms.This solar-energy photo-voltaic cell group is used
In solar energy is converted to electric energy, it need to be arranged at illumination.Accumulator is used for storing solar-energy photo-voltaic cell
The electric energy of group output.Accumulator can be protected by additives for overcharge protection circuit, it is to avoid accumulator overcharges.
Over-discharge protection circuit is possible to prevent accumulator over-discharge to affect the life-span.Inversion system is for unidirectional current
Pressure is converted to alternating voltage and is supplied to building detecting system.
It addition, this building detecting system is then by processing module, the bin being connected with processing module respectively,
Temperature sensor, humidity sensor, Smoke Sensor and alarm composition；Described inversion system then with place
Reason module is connected.Wherein, processing module is AT89C2051 single-chip microcomputer.Temperature sensor and AT89C2051
The P1.5 pin of single-chip microcomputer is connected, and for gathering the temperature of floor, it uses Shanghai Ke Qi finite instrument public
The SMW temperature sensor that department produces realizes.The P1.6 pipe of humidity sensor and AT89C2051 single-chip microcomputer
Foot is connected, and for gathering the temperature of floor, it uses Beijing nine skill Development Co., Ltd of pure Rehabilitation to produce
JCJ175 type humidity sensor.Smoke Sensor is connected with the P1.7 pin of AT89C2051 single-chip microcomputer,
It is for gathering the smoke signal of floor, and it uses the MQ-2 that Zhengzhou Wei Sheng Electronic Technology Co., Ltd produces
Smog sensing realizes.Bin is connected with the P3.5 pin of AT89C2051 single-chip microcomputer, for storing up in advance
Depositing the higher limit of temperature, humidity and smog, its preferred VNXE320A stores module.Alarm then with
The P3.7 pin of AT89C2051 single-chip microcomputer is connected.
Described inversion system can be converted to alternating voltage DC voltage efficiently, the structure of this inversion system
As in figure 2 it is shown, it is by transformator T, the inverter circuit being connected with the former limit inductance coil of transformator T,
And the voltage-stabilizing output circuit composition being connected with the secondary inductance coil of transformator T.
Wherein, described inverter circuit by processing chip U1, field effect transistor MOS, resistance R1, resistance R2,
Resistance R3, resistance R4, resistance R5, electric capacity C1, electric capacity C2, electric capacity C3, Zener diode D1,
Diode D2, diode D3 and diode D4 form.
During connection, the N pole of Zener diode D1 after resistance R3 with the former limit inductance coil of transformator T
Same Name of Ends is connected, its P pole is then connected with the outfan of over-discharge protection circuit.The positive pole of electric capacity C2 with
The N pole of Zener diode D1 is connected, its minus earth.Resistance R1 is serially connected in Zener diode D1's
Between N pole and the VCC pin processing chip U1.The positive pole of electric capacity C1 is extremely connected with the N of diode D2
Connect, its negative pole then after resistance R4 with process chip U1 GND pin be connected while ground connection.Institute
The P pole stating diode D2 is then connected with the COMP pin processing chip U1.The negative pole warp of electric capacity C3
Be connected with the VREF pin processing chip U1 after resistance R2, its positive pole then with the P pole of diode D3
It is connected.The N pole of described diode D3 is then connected with the source electrode of field effect transistor MOS.Resistance R5 goes here and there
It is connected between ISET pin and the grid of field effect transistor MOS of process chip U1.The P pole of diode D4
Be connected with the OUT pin processing chip U1, its N pole is then connected with the drain electrode of field effect transistor MOS.
Meanwhile, the described RT/CT pin of process chip U1 be connected with the negative pole of electric capacity C3, its VFB
Pin then negative pole with electric capacity C1 is connected.The drain electrode of described field effect transistor MOS and the former limit of transformator T
The non-same polarity of inductance coil is connected.This inverter circuit can be converted to alternating current DC voltage efficiently
Pressure, in order to preferably implement the present invention, this process chip U1 integrated chip of preferred UC3842 realizes.
Described voltage-stabilizing output circuit is by the secondary inductance coil of three-terminal voltage-stabilizing chip U2, P pole and transformator T
The Zener diode D5 that non-same polarity is connected, N pole then IN pin with three-terminal voltage-stabilizing chip U2 is connected,
P pole is connected with the Same Name of Ends of the secondary inductance coil of transformator T, N pole is then with three-terminal voltage-stabilizing chip U2's
GND pin be connected while the Zener diode D6 of ground connection, and positive pole is with three-terminal voltage-stabilizing chip U2's
The electric capacity C4 group that OUT pin is connected, negative pole then GND pin with three-terminal voltage-stabilizing chip U2 is connected
Become；The positive pole of described electric capacity C4 is connected with the VCC pin of AT89C2051 single-chip microcomputer, its negative pole then with
AT89C2051 single-chip microcomputer XTAL1 pin be connected.Alternating current can be pressed into by this voltage-stabilizing output circuit
Row processes, and makes alternating voltage more stable, and this three-terminal voltage-stabilizing chip U2 integrated chip of preferred LM317 comes real
Existing.
As it is shown on figure 3, this over-discharge protection circuit is by amplifier P, audion VT, field effect transistor MOS1,
Field effect transistor MOS2, field effect transistor MOS3, field effect transistor MOS4, resistance R6, potentiometer R7, electricity
Resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, diode D7, diode D8, two
Pole pipe D9, diode D10, electric capacity C6 and electric capacity C5 form.
During connection, the N pole of diode D7 source electrode with field effect transistor MOS1 after resistance R6 is connected,
Its P pole ground connection.Potentiometer R7 is serially connected between the grid of field effect transistor MOS1 and the negative pole of amplifier P.
The N pole of diode D8 is connected with the drain electrode of field effect transistor MOS2, its P pole then after resistance R8 with field
The drain electrode of effect pipe MOS1 is connected.The N pole of diode D9 is connected with the colelctor electrode of audion VT
While ground connection, its P pole be then connected with the grid of field effect transistor MOS2.The negative pole of electric capacity C5 and two poles
The P pole of pipe D9 is connected, its positive pole then after resistance R9 drain electrode with field effect transistor MOS1 be connected.
The negative pole of electric capacity C6 is connected with the emitter stage of audion VT, its positive pole then with the leakage of field effect transistor MOS1
Pole is connected.One end of resistance R10 is connected with the grid of field effect transistor MOS3, its other end is then through electricity
Ground connection while being connected with the source electrode of field effect transistor MOS4 after resistance R12.Resistance R11 is serially connected in audion
Between colelctor electrode and the grid of field effect transistor MOS4 of VT.The N pole of diode D10 and field effect transistor
The drain electrode of MOS3 is connected, its P pole is then connected with the drain electrode of field effect transistor MOS4.
The source electrode of described field effect transistor MOS1 is connected with accumulator, its drain electrode then with field effect transistor MOS3
Source electrode be connected.The source ground of described field effect transistor MOS2；The positive pole of described amplifier P and current potential
Device R7 controls that end is connected, its outfan then base stage with audion VT is connected.Described field effect transistor
The drain electrode of MOS3 is connected with the P pole of Zener diode D1.The field effect transistor when the electricity of accumulator is too low
MOS1 and field effect transistor MOS3 are blocked, and accumulator is no longer discharged；Field effect after battery tension recovers
Pipe MOS1 and field effect transistor MOS3 turn on again, and accumulator is discharged again.Put when accumulator is in stopping
During electricity condition, this building detecting system then can be powered by electrical network.
As shown in Figure 4, this additives for overcharge protection circuit by audion VT1, audion VT2, amplifier P1,
Amplifier P2, N pole is connected with the emitter stage of audion VT1, P pole then after resistance R13 with audion
Diode D11, the N pole that the colelctor electrode of VT2 is connected is connected with the colelctor electrode of audion VT2, P pole
The diode D12 that then positive pole with amplifier P1 is connected after resistance R15, positive pole and audion VT1
The electric capacity C7 that base stage is connected, negative pole then positive pole with amplifier P1 is connected, be serially connected in audion VT1
Colelctor electrode and the P pole of diode D11 between resistance R14, be serially connected in the base stage of audion VT2 and put
Resistance R16, P pole between the outfan of big device P2 is connected with the outfan of amplifier P2, N pole is the most suitable
The secondary diode D14 being connected through resistance R18 emitter stage with audion VT2 after resistance R19, positive pole
Be connected with the negative pole of amplifier P2, the negative pole then electric capacity C8 of ground connection after resistance R17, and N pole with
The diode D13 composition that the negative pole of electric capacity C8 is connected, P pole then negative pole with amplifier P1 is connected；
The outfan of described amplifier P1 is connected with the colelctor electrode of audion VT1, its plus earth；Described amplification
The positive pole of device P2 is connected with the junction point of resistance R19 and resistance R18；The current collection of described audion VT2
Pole is then connected with solar-energy photo-voltaic cell group, its emitter stage is then connected with accumulator.Electricity when accumulator
Audion VT2 conducting when measuring low, accumulator is charged by solar-energy photo-voltaic cell group, when accumulator is full of
After electricity, audion VT2 then ends, and accumulator is the most no longer charged by solar-energy photo-voltaic cell group.
During use photovoltaic generating system to building detecting system provide power supply, temperature sensing, humidity sensor with
And Smoke Sensor gathers the temperature of floor, humidity and smoke signal respectively and is sent to processing module, when
Temperature, humidity and smog value exceed the temperature of pre-stored in bin, humidity and smog value post processing mould
Block drives alarm equipment alarm.
As it has been described above, just can well realize the present invention.
Claims (7)
1. solar powered building energy saving based on a battery protection monitoring system, it is characterised in that main
By photovoltaic generating system, the building detecting system being connected with photovoltaic generating system forms；Described photovoltaic generation
System by solar-energy photo-voltaic cell group, the additives for overcharge protection circuit being connected with solar-energy photo-voltaic cell group, with
The accumulator that additives for overcharge protection circuit is connected, the over-discharge protection circuit being connected with accumulator, Yi Jiyu
The inversion system composition that over-discharge protection circuit is connected；Described building detecting system, then by processing module, is divided
Bin, temperature sensor, humidity sensor, Smoke Sensor and the report not being connected with processing module
Alert device composition；Described inversion system is then connected with processing module.
A kind of solar powered building energy saving based on battery protection the most according to claim 1 monitoring is
System, it is characterised in that described additives for overcharge protection circuit by audion VT1, audion VT2, amplifier P1,
Amplifier P2, N pole is connected with the emitter stage of audion VT1, P pole then after resistance R13 with audion
Diode D11, the N pole that the colelctor electrode of VT2 is connected is connected with the colelctor electrode of audion VT2, P pole
The diode D12 that then positive pole with amplifier P1 is connected after resistance R15, positive pole and audion VT1
The electric capacity C7 that base stage is connected, negative pole then positive pole with amplifier P1 is connected, be serially connected in audion VT1
Colelctor electrode and the P pole of diode D11 between resistance R14, be serially connected in the base stage of audion VT2 and put
Resistance R16, P pole between the outfan of big device P2 is connected with the outfan of amplifier P2, N pole is the most suitable
The secondary diode D14 being connected through resistance R18 emitter stage with audion VT2 after resistance R19, positive pole
Be connected with the negative pole of amplifier P2, the negative pole then electric capacity C8 of ground connection after resistance R17, and N pole with
The diode D13 composition that the negative pole of electric capacity C8 is connected, P pole then negative pole with amplifier P1 is connected；
The outfan of described amplifier P1 is connected with the colelctor electrode of audion VT1, its plus earth；Described amplification
The positive pole of device P2 is connected with the junction point of resistance R19 and resistance R18；The current collection of described audion VT2
Pole is then connected with solar-energy photo-voltaic cell group, its emitter stage is then connected with accumulator.
A kind of solar powered building energy saving based on battery protection the most according to claim 2 monitoring is
System, it is characterised in that described over-discharge protection circuit by amplifier P, audion VT, field effect transistor MOS1,
Field effect transistor MOS2, field effect transistor MOS3, field effect transistor MOS4, N pole is imitated with field after resistance R6
Should the source electrode of pipe MOS1 be connected, the diode D7 of P pole ground connection, be serially connected in the grid of field effect transistor MOS1
Potentiometer R7, N pole between the negative pole of pole and amplifier P is connected with the drain electrode of field effect transistor MOS2,
Diode D8, the N pole that P pole is then connected with the drain electrode of field effect transistor MOS1 after resistance R8 and three poles
The colelctor electrode of pipe VT be connected while ground connection, P pole be then connected with the grid of field effect transistor MOS2 two
Pole pipe D9, negative pole is connected with the P pole of diode D9, positive pole then after resistance R9 with field effect transistor MOS1
The electric capacity C5 that is connected of drain electrode, negative pole is connected with the emitter stage of audion VT, positive pole then with field effect
The electric capacity C6 that the drain electrode of pipe MOS1 is connected, one end is connected with the grid of field effect transistor MOS3, another
Hold the resistance R10 of ground connection while being then connected after resistance R12, string with the source electrode of field effect transistor MOS4
It is connected on the resistance R11 between colelctor electrode and the grid of field effect transistor MOS4 of audion VT, and N pole
Be connected with the drain electrode of field effect transistor MOS3, P pole is then connected with the drain electrode of field effect transistor MOS4 two
Pole pipe D10 forms；The source electrode of described field effect transistor MOS1 is connected with accumulator, its drain electrode is then imitated with field
Should the source electrode of pipe MOS3 be connected；The source ground of described field effect transistor MOS2；Described amplifier P's
Positive pole and potentiometer R7 control that end is connected, its outfan then base stage with audion VT is connected；Institute
The input of the drain electrode and inversion system of stating field effect transistor MOS3 is connected.
A kind of solar powered building energy saving based on battery protection the most according to claim 3 monitoring is
System, it is characterised in that described inversion system, by transformator T, is connected with the former limit inductance coil of transformator T
The inverter circuit connect, and the voltage-stabilizing output circuit composition being connected with the secondary inductance coil of transformator T.
A kind of solar powered building energy saving based on battery protection the most according to claim 4 monitoring is
System, it is characterised in that described inverter circuit is by processing chip U1, and field effect transistor MOS, N pole is through resistance
After R3 the Same Name of Ends of former limit inductance coil with transformator T be connected, P pole then with field effect transistor MOS3
The Zener diode D1 that drain electrode is connected, positive pole is connected with the N pole of Zener diode D1, minus earth
Electric capacity C2, be serially connected in Zener diode D1 N pole and process chip U1 VCC pin between electricity
Resistance R1, positive pole is connected with the COMP pin processing chip U1 after diode D2, negative pole is then through electricity
The electric capacity C1 of ground connection while being connected with the GND pin processing chip U1 after resistance R4, negative pole is through resistance
After R2 with process chip U1 VREF pin be connected, positive pole then after diode D3 with field effect transistor
The electric capacity C3 that the source electrode of MOS is connected, is serially connected in ISET pin and field effect transistor MOS processing chip U1
Grid between resistance R5, and P pole with process chip U1 OUT pin be connected, N pole then with
The diode D4 composition that the drain electrode of field effect transistor MOS is connected；The RT/CT pipe of described process chip U1
Foot is connected with the negative pole of electric capacity C3, its VFB pin then negative pole with electric capacity C1 is connected；Described field is imitated
Should the drain electrode of pipe MOS be connected with the non-same polarity of the former limit inductance coil of transformator T.
A kind of solar powered building energy saving based on battery protection the most according to claim 5 monitoring is
System, it is characterised in that described voltage-stabilizing output circuit is by the pair of three-terminal voltage-stabilizing chip U2, P pole and transformator T
The non-same polarity of limit inductance coil is connected, N pole then IN pin with three-terminal voltage-stabilizing chip U2 is connected
Zener diode D5, P pole is connected with the Same Name of Ends of the secondary inductance coil of transformator T, N pole is then with three
The GND pin of end voltage stabilizing chip U2 be connected while the Zener diode D6 of ground connection, and positive pole and three
The OUT pin of end voltage stabilizing chip U2 is connected, negative pole then with the GND pin phase of three-terminal voltage-stabilizing chip U2
The electric capacity C4 composition connected；The positive pole of described electric capacity C4 is all connected with processing module with negative pole.
A kind of solar powered building energy saving based on battery protection the most according to claim 6 monitoring is
System, it is characterised in that described process chip U1 is the integrated chip of UC3842, and three-terminal voltage-stabilizing chip U2 is then
For the integrated chip of LM317.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610364400.XA CN105846514A (en) | 2016-05-26 | 2016-05-26 | Battery protection based solar energy power supply building energy-saving monitoring system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610364400.XA CN105846514A (en) | 2016-05-26 | 2016-05-26 | Battery protection based solar energy power supply building energy-saving monitoring system |
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| CN105846514A true CN105846514A (en) | 2016-08-10 |
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|---|---|---|---|
| CN201610364400.XA Pending CN105846514A (en) | 2016-05-26 | 2016-05-26 | Battery protection based solar energy power supply building energy-saving monitoring system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106899282A (en) * | 2017-03-24 | 2017-06-27 | 成都云材智慧数据科技有限公司 | A kind of pulse-width modulation type network control system |
| CN108001277A (en) * | 2017-12-13 | 2018-05-08 | 奇瑞汽车股份有限公司 | A kind of accumulator of electric car mends electric system and method |
| CN110087347A (en) * | 2019-05-06 | 2019-08-02 | 南京瑞贻电子科技有限公司 | A kind of energy-conserving heating device and power-economizing method of electric heating conversion and control |
-
2016
- 2016-05-26 CN CN201610364400.XA patent/CN105846514A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106899282A (en) * | 2017-03-24 | 2017-06-27 | 成都云材智慧数据科技有限公司 | A kind of pulse-width modulation type network control system |
| CN106899282B (en) * | 2017-03-24 | 2023-09-08 | 成都云材智慧数据科技有限公司 | Pulse width modulation type network control system |
| CN108001277A (en) * | 2017-12-13 | 2018-05-08 | 奇瑞汽车股份有限公司 | A kind of accumulator of electric car mends electric system and method |
| CN110087347A (en) * | 2019-05-06 | 2019-08-02 | 南京瑞贻电子科技有限公司 | A kind of energy-conserving heating device and power-economizing method of electric heating conversion and control |
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Application publication date: 20160810 |