CN105845772A - Infrared/radio-frequency radiation frequency selecting device based on infrared mesh - Google Patents
Infrared/radio-frequency radiation frequency selecting device based on infrared mesh Download PDFInfo
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- CN105845772A CN105845772A CN201510016286.7A CN201510016286A CN105845772A CN 105845772 A CN105845772 A CN 105845772A CN 201510016286 A CN201510016286 A CN 201510016286A CN 105845772 A CN105845772 A CN 105845772A
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- infrared
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Abstract
The invention discloses an infrared/radio-frequency radiation frequency selecting device based on an infrared mesh, and the device comprises a substrate, a mesh film, and an infrared anti-reflection film. The substrate is made of zinc sulfide, and is used for transmitting infrared and reflecting radio frequency. The mesh film covers one side surface of the substrate, and comprises metal lines made of metal and mesh openings formed by the intersected vertical arrangement of the metal lines. The metal lines are used for reflecting radio frequency. The mesh openings formed by the metal lines are used for transmitting infrared. The infrared anti-reflection film is used for enhancing the transmission of infrared radiation. According to the technical scheme of the invention, the device can improve the infrared transmissivity and the radio frequency reflectivity, avoids a diffraction phenomenon, and guaranteeing the imaging quality.
Description
Technical field
The present invention relates to a kind of infrared/radio-frequency radiation frequency selection device, especially relate to a kind of based on infrared
Infrared/radio-frequency radiation the frequency selection device of grid.
Background technology
In the compound emulation of infrared/radio frequency, infra-red radiation and radio-frequency radiation to simultaneously enter red from different directions
In outward/radio frequency compound sensor, infrared/radio-frequency radiation frequency selection device requires both spokes to infrared frequency
Penetrating and have transmission function, having again the radiation to rf frequency has reflection function simultaneously.But prior art
In frequency selection device use metal material as substrate, and manufacture by the way of machining
Forming, limited by machining accuracy, device precision is difficult to improve, infrared radiation time easily send out
Gain interest the phenomenon penetrated, and to infrared carry out transmission time, radio frequency also can occur the phenomenon of transmission to cause penetrating
Rate is too low, affects image quality.
Accordingly, it is desirable to provide a kind of infrared/radio-frequency radiation frequency selection device based on infrared grid, it is possible to
Strengthen infrared rate and RF-reflective rate and improve device precision, it is to avoid diffraction occurs, it is ensured that becoming picture element
Amount.
Summary of the invention
It is an object of the invention to provide a kind of infrared/radio-frequency radiation frequency based on infrared grid and select dress
Put, solve conventional machining accuracy the highest and cause the infrared problem occurring that transmission occur in diffraction and radio frequency.
For solving above-mentioned technical problem, the present invention uses following technical proposals.
A kind of infrared/radio-frequency radiation frequency selection device based on infrared grid, this device described includes
There is the substrate of transmitting infrared radiation function；
It is formed at the grid metallic film for reflected radio radiation of substrate side, including red for transmission
Extraradial mesh array.
Preferably, mesh grid thin film uses photolithographicallpatterned caustic solution to be formed.
Preferably, the live width of mesh grid metallic film mesh array is 0.5mm～1mm, and described mesh
The distance between centers of tracks of array is 4mm～5mm.
Preferably, described substrate is made up of zinc sulfide.
Preferably, to farther include to be formed at described substrate relative with mesh grid metallic film for described device
First infrared anti-reflection film of side.
Preferably, described device farther includes
The second infrared anti-reflection film being formed between described substrate and mesh grid metallic film.
Preferably, described infrared anti-reflection film is made up of fluoride materials.
Preferably, described infrared anti-reflection film is made up of fluoride materials.
Preferably, the width of mesh grid metallic film metal wire is 0.5mm～1mm.
Preferably, the distance between mesh grid metallic film metal wire is 4mm～5mm.
Beneficial effects of the present invention is as follows:
Technical scheme of the present invention, it is possible to strengthen infrared rate and RF-reflective rate, it is to avoid occur that diffraction is existing
As, it is ensured that image quality.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in further detail:
Fig. 1 illustrates that in the embodiment of the present invention 1, a kind of infrared/radio-frequency radiation frequency based on infrared grid selects
Apparatus structure schematic diagram；
Fig. 2 illustrates infrared/radio-frequency radiation frequency selection device based on infrared grid in the embodiment of the present invention 2
Structural representation；
Fig. 3 illustrates infrared/radio-frequency radiation frequency selection device based on infrared grid in the embodiment of the present invention 2
Structural representation；
Fig. 4 illustrates infrared/radio-frequency radiation frequency selection device based on infrared grid in the embodiment of the present invention 3
Structural representation.
Detailed description of the invention
In order to be illustrated more clearly that the present invention, below in conjunction with preferred embodiments and drawings, the present invention is done into one
The explanation of step.Parts similar in accompanying drawing are indicated with identical reference.Those skilled in the art
Should be appreciated that following specifically described content is illustrative and be not restrictive, should not limit with this
Protection scope of the present invention.
Embodiment 1:
Select as it is shown in figure 1, the invention discloses a kind of infrared/radio-frequency radiation frequency based on infrared grid
Device, this device includes infrared substrate 1, grid metallic film 2.
Infrared substrate 1, such as, be prepared from by zinc sulfide, infrared for transmission, and be preferred for reflection and penetrate
Frequently.A side surface in infrared substrate 1 is formed with the grid metallic film using photolithographicallpatterned etching
2, as reflecting surface, for reflected radio ray.As in figure 2 it is shown, this grid metallic film 2 include by
Metal line and the mesh formed that is staggered by metal line that gold is prepared from display.Metal line
Radiate for reflected radio, metal line the mesh formed displays for transmitting infrared radiation.This metal
The width of line for example, 0.5mm～1mm, the distance between metal wire is 4mm～5mm.Infrared substrate 1
The opposite side surface relative with grid metallic film 2, as transmission plane, for transmitting infrared radiation.
When infra-red radiation 3 is from this device transmission plane side incidence, infra-red radiation 3 can occur transmission phenomenon；
When radio-frequency radiation 4 is from this device reflecting surface side incidence, there is reflex in radio-frequency radiation 4.According to
The IR transmittance of the frequency selection device that embodiment 1 obtains is 60%～70%, radio-frequency radiation reflectance
More than 70%.
Embodiment 2:
As it is shown on figure 3, the invention discloses the infrared/radio frequency spoke of a kind of infrared grid based on embodiment 1
Penetrating frequency selection device, this device includes infrared substrate 1, grid metallic film 2, infrared anti-reflection film 3.
The material of substrate 1 is zinc sulfide, and thickness is the 1/10 of diameter.Nethike embrane 2 includes being prepared from by gold
The mesh display that formed of metal line and being staggered by metal line.Metal line is penetrated for reflection
Radio-frequency radiation, metal line the mesh formed displays for transmitting infrared radiation.The width example of this metal wire
As for 0.5mm～1mm, the distance between metal wire is 4mm～5mm.Infrared anti-reflection film 3 is formed at base
The opposite side surface that the end 1 is relative with nethike embrane 2, as transmission plane, material is fluoride, its thickness >=2 μm,
For strengthening Infrared absorbance.Owing to the aperture of nethike embrane 2 mesh is 4.0mm × 5.0mm, the most greatly
In infrared wavelength, it is to avoid during infra-red radiation light transmission, diffraction occurs.
When infra-red radiation 4 is from this device transmission plane side incidence, infra-red radiation 4 can occur transmission phenomenon；
When radio-frequency radiation 5 is from this device reflecting surface side incidence, there is reflex in radio-frequency radiation 5.According to
The IR transmittance of the frequency selection device that this embodiment 2 obtains is 70%～80%, and radio-frequency radiation reflects
Rate is more than 70%.
Embodiment 3:
As shown in Figure 4, the invention also discloses the infrared/radio frequency of a kind of infrared grid based on embodiment 2
Radiation frequency select device, this device include infrared substrate 1, grid metallic film 2, infrared anti-reflection film 3,
Infrared anti-reflection film 4.
Infrared anti-reflection film 4 is formed between infrared substrate 1 and grid metallic film 2, is made up of fluoride,
Its thickness >=2 μm.
When infra-red radiation 4 is from this device transmission plane side incidence, infra-red radiation 4 can occur transmission phenomenon；
When radio-frequency radiation 5 is from this device reflecting surface side incidence, there is reflex in radio-frequency radiation 5.According to
The IR transmittance of the frequency selection device that this embodiment obtains is more than 90%, and radio-frequency radiation reflectance is big
In 70%.
In sum, technical scheme of the present invention, using infra-red material is as substrate, photolithographicallpatterned
The grid thin film of etching, it is possible to strengthen infrared rate and RF-reflective rate and improve device precision, it is to avoid
Diffraction there is, it is ensured that image quality.
Obviously, the above embodiment of the present invention is only for clearly demonstrating example of the present invention, and
It is not the restriction to embodiments of the present invention, for those of ordinary skill in the field,
Can also make other changes in different forms on the basis of described above, here cannot be to all
Embodiment give exhaustive, every belong to the obvious change that technical scheme extended out
Change or change the row still in protection scope of the present invention.
Claims (10)
1. infrared/radio-frequency radiation frequency selection device based on infrared grid, it is characterised in that described
This device includes
There is the substrate of transmitting infrared radiation function；
It is formed at the grid metallic film for reflected radio radiation of substrate side, including red for transmission
Extraradial mesh array.
Frequency selection device the most according to claim 1, it is characterised in that mesh grid thin film is adopted
Formed with photolithographicallpatterned caustic solution.
Frequency selection device the most according to claim 1, it is characterised in that mesh grid metal foil
The live width of film mesh array is 0.5mm～1mm, and the distance between centers of tracks of described mesh array is 4mm～5mm.
Device the most according to claim 1, it is characterised in that described substrate is made up of zinc sulfide.
Selection device the most according to claim 1, it is characterised in that described device farther includes
It is formed at the first infrared anti-reflection film of described substrate and mesh grid metallic film opposite side.
Select device the most according to claim 1 or 5, it is characterised in that described device is further
Including
The second infrared anti-reflection film being formed between described substrate and mesh grid metallic film.
Selection device the most according to claim 5, it is characterised in that described infrared anti-reflection film is by fluorine
Compound is made.
Selection device the most according to claim 6, it is characterised in that described infrared anti-reflection film is by fluorine
Compound is made.
Frequency selection device the most according to claim 1, it is characterised in that mesh grid metal foil
The width of film metal wire is 0.5mm～1mm.
Frequency selection device the most according to claim 1, it is characterised in that mesh grid metal
Distance between film metal line is 4mm～5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016286.7A CN105845772A (en) | 2015-01-13 | 2015-01-13 | Infrared/radio-frequency radiation frequency selecting device based on infrared mesh |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510016286.7A CN105845772A (en) | 2015-01-13 | 2015-01-13 | Infrared/radio-frequency radiation frequency selecting device based on infrared mesh |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105845772A true CN105845772A (en) | 2016-08-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510016286.7A Pending CN105845772A (en) | 2015-01-13 | 2015-01-13 | Infrared/radio-frequency radiation frequency selecting device based on infrared mesh |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280163A (en) * | 2011-05-20 | 2011-12-14 | 西北工业大学 | Infrared transparent conductive film and preparation method thereof |
| CN102914807A (en) * | 2012-11-13 | 2013-02-06 | 中国航天科技集团公司第五研究院第五一0研究所 | Multi-spectral permeability-increasing protection film for zinc sulfide substrate |
| CN103515701A (en) * | 2013-10-23 | 2014-01-15 | 哈尔滨工业大学 | Infrared transmission microstrip antenna based on circular metallic mesh and infrared transmission semiconductor |
-
2015
- 2015-01-13 CN CN201510016286.7A patent/CN105845772A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280163A (en) * | 2011-05-20 | 2011-12-14 | 西北工业大学 | Infrared transparent conductive film and preparation method thereof |
| CN102914807A (en) * | 2012-11-13 | 2013-02-06 | 中国航天科技集团公司第五研究院第五一0研究所 | Multi-spectral permeability-increasing protection film for zinc sulfide substrate |
| CN103515701A (en) * | 2013-10-23 | 2014-01-15 | 哈尔滨工业大学 | Infrared transmission microstrip antenna based on circular metallic mesh and infrared transmission semiconductor |
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Application publication date: 20160810 |