CN105845626A - Semiconductor device and manufacturing method therefor - Google Patents
Semiconductor device and manufacturing method therefor Download PDFInfo
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- CN105845626A CN105845626A CN201510018147.8A CN201510018147A CN105845626A CN 105845626 A CN105845626 A CN 105845626A CN 201510018147 A CN201510018147 A CN 201510018147A CN 105845626 A CN105845626 A CN 105845626A
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Abstract
The invention relates to a semiconductor device and a manufacturing method therefor. The method comprises the following steps: providing a light-transmission substrate; forming a grid electrode on the light-transmission substrate; forming a grid insulating layer covering the grid electrode; forming an oxidation semiconductor layer on the grid insulating layer, wherein at least a part of the oxidation semiconductor layer is located above the grid electrode; forming an etching terminating layer above the grid electrode, and enabling at least a part of the etching terminating layer to cover the oxidation semiconductor layer, wherein the etching terminating layer is provided with an opening; forming an electrode layer on the opening and a part of the etching terminating layer; and carrying out the low-resistance processing of a non-etching terminating layer of the oxidation semiconductor layer and a part covered by the electrode layer to form a pixel electrode.
Description
Technical field
The present invention is about a kind of semiconductor device and manufacture method thereof.Particularly relate to a kind of use aoxidize
Quasiconductor and the semiconductor device that formed and manufacture method thereof, especially with respect to a kind of liquid crystal indicator
Or the active-matrix substrate of organic EL display and manufacture method thereof.Herein, semiconductor device bag
Containing active-matrix substrate or the display device possessing it.
Background technology
Optical cover process (Photo Engraving Process, PEP) is often to use in manufacture of semiconductor
Making technology, one optical cover process generally includes the steps such as deposition, development and etching.Existing thin
In the processing procedure of film transistor substrate, grid, drain electrode, source electrode, passage, etch stop layer, passivation
The structures such as layer or pixel electrode are formed typically by optical cover process, and therefore processing procedure is numerous and diverse and holds
It is easily generated the problems such as alignment tolerance.
Summary of the invention
Comprise the following steps according to the manufacture method of a kind of semiconductor device of the present invention: offer one is saturating
Light substrate；Form a grid in light-transmissive substrates；Form a gate insulator to be covered on grid；
Formation one oxidation semiconductor layer is on gate insulator, and is at least partially disposed at above grid；Formed
One etch stop layer is above grid, and at least covering part oxidation semiconductor layer, etch stop layer
There is an opening；Form an electrode layer on opening and part etch stop layer；And will oxidation half
Conductor layer is not etched the part of stop layer and electrode layer covering to carry out low-resistance treatment and forms one
Pixel electrode.
In one embodiment, before forming gate insulator, shape is further included steps of
Becoming a common electrode in light-transmissive substrates, common electrode is arranged, wherein with grid copline and separation
Gate insulator is covered in common electrode further.
In one embodiment, manufacture method further includes steps of formation one passivation layer covering
Pixel electrode, etch stop layer and electrode layer；And form a common electrode on passivation layer.
In one embodiment, low-resistance treatment includes that vacuum plasma-based processes or the high temperature anneal.
Include that a light-transmissive substrates, a grid, a grid are exhausted according to a kind of semiconductor device of the present invention
Edge layer, an oxidation semiconductor layer, an etch stop layer and an electrode layer.Grid is arranged at printing opacity
On substrate.Gate insulator is covered on grid.Oxidation semiconductor layer is arranged on gate insulator,
And be at least partially disposed at above grid.Etch stop layer is arranged at above grid, and at least covering part
Divide oxidation semiconductor layer.Etch stop layer has an opening.Electrode layer is arranged at opening and part erosion
Carve on stop layer.It is a picture that oxidation semiconductor layer is not etched the part of stop layer and electrode layer covering
Element electrode.
In one embodiment, semiconductor device farther includes a common electrode, and it is arranged at printing opacity
On substrate.Common electrode is arranged with grid copline and separation.Gate insulator is covered in further
In common electrode.
In one embodiment, semiconductor device farther includes a passivation layer and a common electrode.Blunt
Change layer and cover pixel electrode, etch stop layer and electrode layer.Common electrode is arranged on passivation layer.
In one embodiment, the material of common electrode includes that indium tin oxide (ITO), indium zinc aoxidize
Thing (IZO), fluorine doped tin oxide (FTO), Al-Doped ZnO (AZO), gallium-doped zinc oxide (GZO),
Or indium gallium zinc oxide (IGZO).
In one embodiment, when the material of common electrode is indium gallium zinc oxide (IGZO), share
Electrode is an electrode by low-resistance treatment.
In one embodiment, the material of oxidation semiconductor layer includes indium gallium zinc oxide (IGZO).
In one embodiment, oxidation semiconductor layer includes the first oxidation semiconductor layer and the second oxidation half
Conductor layer, wherein first oxidation semiconductor layer be positioned at gate insulator with second aoxidize semiconductor layer it
Between, and the second oxidation semiconductor layer doped n-type impurity or p-type impurity.
In one embodiment, pixel electrode farther includes the first oxidation semiconductor layer and the second oxidation
Semiconductor layer.
From the above, semiconductor device of the present invention and preparation method thereof, by not being etched end
The partial oxidation semiconductor layer that only layer covers carries out low-resistance treatment, and forms pixel electrode, and
It is not required to additionally arrange a pixel electrode layer, and then reduces the making technology using light shield, and remove from
Form the issuable tolerance of pixel electrode layer.
Accompanying drawing explanation
Fig. 1 is the steps flow chart of the manufacture method of a kind of semiconductor device of first embodiment of the invention
Figure.
Fig. 2 to Fig. 5 is the manufacturing process schematic diagram of semiconductor device.
Fig. 6 is the profile of a kind of semiconductor device of first embodiment of the invention.
Fig. 7 is the top view of the semiconductor device of Fig. 6.
Fig. 8 A and Fig. 8 B is respectively the schematic diagram of the different aspects of semiconductor device.
Fig. 9 is the step stream of the manufacture method of the another kind of semiconductor device of first embodiment of the invention
Cheng Tu.
Figure 10 A is the manufacture method flow chart of a kind of semiconductor device of second embodiment of the invention.
Figure 10 B is the profile of a kind of semiconductor device of second embodiment of the invention.
Detailed description of the invention
Hereinafter with reference to correlative type, a kind of semiconductor device according to present pre-ferred embodiments is described
And manufacture method, the most identical element will be illustrated with identical reference.
Fig. 1 is the steps flow chart of the manufacture method of a kind of semiconductor device of first embodiment of the invention
Figure, Fig. 2 to Fig. 5 is the manufacturing process schematic diagram of semiconductor device, and Fig. 6 is that the present invention first is real
Execute the profile of a kind of semiconductor device S1 of example.Refer to Fig. 1 and arrange in pairs or groups shown in Fig. 2 to Fig. 6,
The semiconductor device S1 of the present invention and manufacture method thereof can be applicable to liquid crystal indicator or organic EL
The active-matrix substrate of (Organic Electro-Luminescence) display device, e.g. thin film
Transistor (Thin Film Transistor, TFT) array substrate, is especially applicable to fringe field and turns
Change the active-matrix substrate of the liquid crystal indicator of (Fringe Field Switching, FFS) technology.
In this, semiconductor device S1 can comprise active-matrix substrate or possess its display device.
The manufacture method of semiconductor device S1 comprises the following steps: provide a light-transmissive substrates (S01)；
Form a grid (S02) in light-transmissive substrates；Form a common electrode in light-transmissive substrates, share
Electrode arranges (S03) with grid copline and separation；Formed a gate insulator be covered in grid and
In common electrode (S04)；Form an oxidation semiconductor layer on gate insulator, and at least partly
It is positioned at (S05) above grid；Form an etch stop layer above grid, and at least covering part
Oxidation semiconductor layer, etch stop layer has an opening (S06)；Formed an electrode layer in opening and
On part etch stop layer (S07)；And oxidation semiconductor layer is not etched stop layer and electrode
The part that layer covers carries out low-resistance treatment and forms a pixel electrode (S08).
In step S01 and step S02, as shown in Figure 2, it is provided that a light-transmissive substrates 1.Printing opacity serves as a contrast
The end 1 can be glass substrate, plastic or Sapphire Substrate.Then, formed a grid 2 in
In light-transmissive substrates 1.Specifically, grid 2 can be served as a contrast in printing opacity by sputter deposition layer of metal layer
, and on metal level, photoresist is covered at the end 1, utilize light shield that photoresist is exposed, develop,
And the making technology such as etching and form grid 2.Wherein metal level (and grid formed by metal level
Pole 2) material can include tantalum (Ta), neodymium (Nd), chromium (Cr), tungsten (W), titanium (Ti),
Molybdenum (Mo), aluminum (Al), copper (Cu) or a combination thereof.
In step S03, it is arranged at light-transmissive substrates 1 to common electrode CE and grid 2 copline
On, and separate setting is to electrically isolate.The material of common electrode CE can include conductive layer,
Such as indium tin oxide (ITO), indium-zinc oxide (IZO), fluorine doped tin oxide (FTO), mix aluminum
Zinc oxide (AZO) or gallium-doped zinc oxide (GZO), its can by depositing, expose, develop,
And the making technology such as etching and formed.It is noted that the material of common electrode CE can also be
Oxidation semiconductor layer, such as indium gallium zinc oxide (IGZO).Wherein, when the material of common electrode CE
For indium gallium zinc oxide (IGZO), common electrode CE can be a conductor by low-resistance treatment.
Specifically, low-resistance treatment can include that vacuum plasma-based processes or the high temperature anneal.Example
Chemical gaseous phase deposition (Chemical Vapor Deposition is called for short CVD) device is had as used
Hydrogen plasma-based process, use have Etaching device argon plasma-based process and reducing environment under high annealing
The low-resistance treatment that the multiple method collocation such as the high temperature anneal that process waits or hydrogen plasma-based is arranged in pairs or groups use
Method.Or, such as, common electrode CE using indium gallium zinc oxide (IGZO) is placed in hydrogen
Via the high-temperature process 1 to 2 hour of 250 DEG C to 400 DEG C in compression ring border so that common electrode CE
Oxonium ion be reduced and form conductor.
Then, refer to shown in Fig. 3, form a gate insulator 3 and be covered on grid 2.In
In step S04, gate insulator 3 such as can deposit (Chemical Vapor with chemical gaseous phase
Deposition, CVD) mode be formed in light-transmissive substrates 1, the wherein material of gate insulator 3
Material include Si oxide (SiOx), silicon nitride (SiNx), silicon nitrogen oxides (SiOxNy),
Aluminium oxide (Al2O3), aluminium nitride (AlN) or pi (Polyimide, PI).Additionally,
In the present embodiment, gate insulator 3 covers common electrode CE further.
Refer to shown in Fig. 4, in step S05, form an oxidation semiconductor layer 4 exhausted in grid
In edge layer 3, and being at least partially disposed at above grid 2, wherein oxidation semiconductor layer 4 can include indium
Gallium zinc oxide (IGZO).Specifically, can by sputter deposit one layer of indium gallium zinc oxide in
On gate insulator 3, and on indium gallium zinc oxide, cover photoresist, utilize light shield to photoresist
Be exposed, develop and the making technology such as etching and form (the i.e. oxidation half of indium gallium zinc oxide
Conductor layer 4).Additionally, in the present embodiment, oxidation semiconductor layer 4 extends formation further to altogether
Top with electrode CE.
Subsequently entering step S06, refer to shown in Fig. 5, the top of grid 2 forms an etch-stop
Layer 5, and at least covering part oxidation semiconductor layer 4.In the present embodiment, etch stop layer 5 has
Having an opening 51, opening is positioned at above oxidation semiconductor layer 4, and step S07 as shown in Figure 6,
Form an electrode layer 6 on opening 51 and part etch stop layer 5 so that electrode layer 6 can pass through
Opening 51 is electrically connected with oxidation semiconductor layer 4, and wherein electrode layer 6 is as source/drain.In this,
The material of electrode layer 6 can include tantalum (Ta), neodymium (Nd), chromium (Cr), tungsten (W), titanium (Ti),
Molybdenum (Mo), aluminum (Al), copper (Cu) or a combination thereof.It addition, electrode layer 6 can be with above-mentioned gold
Belong to layer (or gate pole 2) and use identical or different material.
Finally carry out step S08, oxidation semiconductor layer 4 is not etched stop layer 5 and electrode layer 6
The part covered carries out low-resistance treatment and forms a pixel electrode P.Refer to Fig. 6 and Fig. 7
Shown in, wherein Fig. 7 is the top view of semiconductor device of Fig. 6, and Fig. 6 is that Fig. 7 is along line A-A
The profile of section.Become owing to the part of oxidation semiconductor layer 4 exposure carries out low-resistance treatment
Conductor, therefore can be as pixel electrode P.Additionally, for make graphic succinctly, Fig. 7 does not shows that grid is exhausted
Edge layer 3.
Similarly, low-resistance treatment can include that vacuum plasma-based processes or the high temperature anneal.Such as
Use has the hydrogen of chemical gaseous phase deposition (Chemical Vapor Deposition is called for short CVD) device
Plasma-based process, use have Etaching device argon plasma-based process and reducing environment under high annealing at
The low-resistance treatment side that the multiple method collocation such as reason etc. or hydrogen plasma-based collocation the high temperature anneal use
Method.
Or, the partial oxidation semiconductor layer 4 being such as exposed to outside etch stop layer 5, at hydrogen
Via the high-temperature process 1 to 2 hour of 250 DEG C to 400 DEG C in environment so that oxidation semiconductor layer 4
Oxonium ion be reduced and form conductor.In this, oxidation semiconductor layer 4 is etched stop layer 5 and covers
Lid and without the part of low-resistance treatment, and be that self-electrode layer 6 is communicated to pixel electrode P
Part is channel region C, and wherein length L of channel region C can refer to Fig. 6 and indicated.
Consequently, it is possible to the present embodiment is by carrying out low-resistance treatment by partial oxidation semiconductor layer 4
And form pixel electrode P, without additionally arranging a pixel electrode layer, and then reduce use light shield
Making technology, and remove the formation issuable tolerance of pixel electrode layer from.
Therefore, by the semiconductor device S1 obtained by above-mentioned manufacture method include a light-transmissive substrates 1,
One grid 2, common electrode CE, gate insulator 3, oxidation semiconductor layer 4, etching
Stop layer 5 and an electrode layer 6, wherein partial oxidation semiconductor layer 4 is by low-resistance treatment
It is a pixel electrode P.
In the present embodiment, common electrode CE is to configure a plurality of the separation, and pixel electrode P is that full wafer is joined
Put.In other embodiments, pixel electrode P can configure in a plurality of the separation, and common electrode CE
Can configure in full wafer.In this, interconnected with common electrode CE by pixel electrode P, when partly leading
When body device S1 is applied to display panels, common electrode CE can produce with pixel electrode P
Fringe field rotates to control liquid crystal molecule.
Additionally, the explanation of each assembly is specified in semiconductor device S1, repeat no more in this.
It addition, semiconductor device S1 can farther include a passivation layer (not shown), it is arranged at
On pixel electrode P and electrode layer 6, external conductor contact pixel electrode P or electrode layer 6 can be avoided
And produce electrically interference.
It addition, oxidation semiconductor layer 4 can be multiple structure.Refer to shown in Fig. 8 A and Fig. 8 B,
It is respectively the schematic diagram of different aspects of semiconductor device.As shown in Figure 8 A, in the present embodiment,
Oxidation semiconductor layer 4 includes the first oxidation semiconductor layer 41 and the second oxidation semiconductor layer 42, wherein
First oxidation semiconductor layer 41 is between gate insulator 3 and the second oxidation semiconductor layer 42.
And the second oxidation semiconductor layer 42 shown in Fig. 8 B is only located at the lower section of etch stop layer 5, to carry
The sectional area of high channel district C.In these embodiments, the second oxidation semiconductor layer 42 can adulterate p
Type impurity such as boron (B) or the doping of p-type impurity such as phosphorus (P) so that the second oxidation semiconductor layer
42 have more preferably electric conductivity.In this, manufacture method can farther include a step: will oxidation half
Conductor layer is doped process (S09), the most as shown in Figure 9.Can make as a example by doping p-type impurity
It is reacting gas with silane (SiH4) and hydrogen phosphide (PH3), sinks by plasma-based Assisted Chemical Vapor
Long-pending (plasma-enhanced chemical vapor deposition, PECVD) method, vapor growth method,
Sputtering method is carried out.Alternatively, it is also possible to use diffusion method or ionic-implantation to be imported to by impurity element
This amorphous silicon film.Preferably heat after using ionic-implantation etc. to import impurity element
Spread etc. making impurity element.Silane (SiH4) and second boron can be used as a example by doped p type impurity
Alkane (B2H6) is reacting gas, by PECVD, vapor growth method,
Sputtering method is carried out.Alternatively, it is also possible to use diffusion method or ionic-implantation to be imported to by impurity element
This amorphous silicon film.Preferably heat after using ionic-implantation etc. to import impurity element
Spread etc. making impurity element.
Figure 10 A is the manufacture method flow chart of a kind of semiconductor device of second embodiment of the invention,
Figure 10 B is the profile of a kind of semiconductor device of second embodiment of the invention.Refer to Figure 10 A
And shown in Figure 10 B, the manufacture method of the present embodiment includes: provide a light-transmissive substrates (S11)；Shape
Become a grid (S12) in light-transmissive substrates；Form a gate insulator and be covered on grid (S13)；
Formation one oxidation semiconductor layer is on gate insulator, and is at least partially disposed at (S14) above grid；
Form an etch stop layer above grid, and at least covering part oxidation semiconductor layer, etching is eventually
Only layer has an opening (S15)；Form an electrode layer on opening and part etch stop layer (S16)；
The part that oxidation semiconductor layer is not etched stop layer and electrode layer covering is carried out low-resistance treatment
And form a pixel electrode (S17)；Formed one passivation layer cover pixel electrode, etch stop layer and
Electrode layer (S18)；And form a common electrode (S19) on passivation layer.Briefly, originally
The semiconductor device S2 of embodiment is with the difference of above-described embodiment, in the present embodiment, shares
Electrode CE is formed at the top of pixel electrode P, namely common electrode CE and pixel electrode P
Relative position exchange.
Specifically, in the present embodiment, common electrode CE of semiconductor device S2 is formed at
After pixel electrode P, namely after the low-resistance treatment of step S17, then carry out step
S18 and step S19: a passivation layer (passivation) 7 is set, and common electrode CE is set
On passivation layer 7.Furthermore, it is understood that passivation layer 7 such as can deposit (CVD) with chemical gaseous phase
Mode formed, and cover pixel electrode P, etch stop layer 5 and electrode layer 6, and as protecting
Sheath, to prevent external conductor from electrically disturbing pixel electrode P or electrode layer 6.Wherein, passivation layer 7
Material for example, Si oxide (SiOx), silicon nitride (SiNx), silicon nitrogen oxides (SiOxNy),
Aluminium oxide (Al2O3), aluminium nitride (AlN) or pi (Polyimide, PI).Therefore,
Common electrode CE is i.e. formed on passivation layer 7, is particularly at the top of pixel electrode P, to work as
When semiconductor device S2 is applied to display panels, common electrode CE can be produced with pixel electrode P
Raw fringe field rotates to control liquid crystal molecule.Wherein, the material of common electrode CE and above-mentioned enforcement
Example is identical, and when using indium gallium zinc oxide (IGZO) as common electrode CE, can be via
Low-resistance treatment and formed common electrode use, its narration has been specified in, does not repeats in this.
It addition, the step of the present embodiment and assembly can also refer to, described in above-described embodiment, not repeat.
In sum, semiconductor device of the present invention and preparation method thereof, by not being etched end
The partial oxidation semiconductor layer that only layer covers carries out low-resistance treatment, and forms pixel electrode, and
It is not required to additionally arrange a pixel electrode layer, and then reduces the making technology using light shield, and remove from
Form the issuable tolerance of pixel electrode layer.
The foregoing is only illustrative, rather than be restricted person.Any spirit without departing from the present invention
With category, and the equivalent modifications that it is carried out or change, it is intended to be limited solely by appended claims
In scope.
Claims (12)
1. a manufacture method for semiconductor device, comprises the following steps:
One light-transmissive substrates is provided；
Form a grid in described light-transmissive substrates；
Form a gate insulator to be covered on described grid；
Formation one oxidation semiconductor layer is on described gate insulator, and is at least partially disposed at described grid
Above pole；
Form an etch stop layer above described grid, and at least aoxidize described in covering part and partly lead
Body layer, described etch stop layer has an opening；
Form an electrode layer on the described etch stop layer of described opening and part；And
The part that described oxidation semiconductor layer is not covered by described etch stop layer and described electrode layer
Carry out low-resistance treatment and form a pixel electrode.
2. manufacture method as claimed in claim 1, wherein before forming described gate insulator,
Further include steps of
Forming a common electrode in described light-transmissive substrates, described common electrode is put down altogether with described grid
Face and separation are arranged, and wherein said gate insulator is covered in described common electrode further.
3. manufacture method as claimed in claim 1, further includes steps of
Form a passivation layer and cover described pixel electrode, described etch stop layer and described electrode layer；
And
Form a common electrode on described passivation layer.
4. manufacture method as claimed in claim 1, wherein said low-resistance treatment includes vacuum
Plasma-based processes or the high temperature anneal.
5. a semiconductor device, including:
One light-transmissive substrates；
One grid, is arranged in described light-transmissive substrates；
One gate insulator, is covered on described grid；
One oxidation semiconductor layer, is arranged on described gate insulator, and is at least partially disposed at described
Above grid；
One etch stop layer, is arranged at above described grid, and at least oxidation half described in covering part
Conductor layer, described etch stop layer has an opening；And
One electrode layer, is arranged on described opening and the described etch stop layer of part；
The portion that wherein said oxidation semiconductor layer is not covered by described etch stop layer and described electrode layer
It is divided into a pixel electrode.
6. semiconductor device as claimed in claim 5, farther includes a common electrode, arranges
In described light-transmissive substrates, described common electrode is arranged, wherein with described grid copline and separation
Described gate insulator is covered in described common electrode further.
7. semiconductor device as claimed in claim 5, farther includes:
One passivation layer, covers described pixel electrode, described etch stop layer and described electrode layer；And
One common electrode, is arranged on described passivation layer.
Semiconductor device the most as claimed in claims 6 or 7, the material of wherein said common electrode
Including indium tin oxide i.e. ITO, indium-zinc oxide i.e. IZO, fluorine doped tin oxide i.e. FTO, mix aluminum
Zinc oxide i.e. AZO, gallium-doped zinc oxide i.e. GZO or the indium i.e. IGZO of gallium zinc oxide.
9. semiconductor device as claimed in claim 8, when the material of described common electrode be wherein
The indium i.e. IGZO of gallium zinc oxide, described common electrode is an electrode by low-resistance treatment.
10. semiconductor device as claimed in claim 5, the material of wherein said oxidation semiconductor layer
Material includes the indium i.e. IGZO of gallium zinc oxide.
11. semiconductor devices as claimed in claim 5, wherein said oxidation semiconductor layer includes
First oxidation semiconductor layer and the second oxidation semiconductor layer, wherein the first oxidation semiconductor layer is positioned at grid
Between pole insulating barrier and the second oxidation semiconductor layer, and the second oxidation semiconductor layer doped n-type impurity
Or p-type impurity.
12. semiconductor devices as claimed in claim 11, wherein said pixel electrode wraps further
Include the first oxidation semiconductor layer and the second oxidation semiconductor layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510018147.8A CN105845626A (en) | 2015-01-14 | 2015-01-14 | Semiconductor device and manufacturing method therefor |
| US14/995,515 US9653488B2 (en) | 2015-01-14 | 2016-01-14 | Semiconductor device and manufacturing method thereof |
| US15/477,555 US20170207344A1 (en) | 2015-01-14 | 2017-04-03 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510018147.8A CN105845626A (en) | 2015-01-14 | 2015-01-14 | Semiconductor device and manufacturing method therefor |
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| CN105845626A true CN105845626A (en) | 2016-08-10 |
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| CN201510018147.8A Pending CN105845626A (en) | 2015-01-14 | 2015-01-14 | Semiconductor device and manufacturing method therefor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109491157A (en) * | 2017-09-13 | 2019-03-19 | 夏普株式会社 | The manufacturing method of display panel substrate |
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| CN104094386A (en) * | 2012-01-31 | 2014-10-08 | 夏普株式会社 | Semiconductor device and method for producing same |
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| CN102157563A (en) * | 2011-01-18 | 2011-08-17 | 上海交通大学 | Method for manufacturing metal oxide thin film transistor |
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| CN109491157A (en) * | 2017-09-13 | 2019-03-19 | 夏普株式会社 | The manufacturing method of display panel substrate |
| CN109491157B (en) * | 2017-09-13 | 2022-04-05 | 夏普株式会社 | Method for manufacturing substrate for display panel |
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