CN105845567A - Process for preparing nanometer schottky structure through utilizing physical method - Google Patents
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses the process for preparing a nanometer schottky structure through utilizing a physical method and relates to a new method through which the dispersal-uniform and dimension-consistent nanometer schottky structure is prepared on the basis of the boiled colloid droplet technology. According to the method, a proper substrate is selected, and the nanometer schottky structure is prepared through boiling a colloidal solution. In the preparation process, not only can colloidal solutions with different materials be selected, but also the colloidal solutions of one same material can have different concentrations and different dimensions. Compared with other nanometer schottky structure preparation methods in the prior art, nanometer particles having better dimension consistency and more uniform dispersal property can be acquired through the method, operation is simple and convenient, the method further has advantages of good controllability and high repeatability, and thereby abundant nanometer schottky structure materials can be prepared.
Description
Technical field
The present invention relates to the preparation method of a kind of microelectronic device, particularly relate to a kind of nanostructured electronic device
Preparation method, is applied to nanometric semiconductor electronic device and field of optoelectronic devices.
Background technology
The highest (the i.e. minimum feature of photoetching process of the highest accuracy of manufacture shown in manufacturing process of the integrated level of integrated circuit
The least), the transistor size in circuit is the least, it is therefore desirable to the performance of nano-device is carried out exploratory development.Any half
Conductor technology all be unable to do without metal system.So-called metal system, including interconnection line, the metal semiconductor of each device cell
Contact (Schottky barrier contact and Ohmic contact) and gate electrode etc..And any semiconductor device has a common base
The input of this structure, the i.e. energy and the fuction output after device operates, and the hinge undertaking this input/output is golden
Belong to semiconductor contact.
It has been investigated that when the size reduction of device is to micro-nano-scale, owing to quantum size effect and surface and interface are imitated
Should, its many microphysical phenomena compared with Macroscopic physical phenomenon, have the biggest difference, and miniature due to device dimension
Changing, make the relative importance of original various influence factor also there occurs change, therefore dimensional effect and interfacial effect are led at microcosmic
Territory plays the most very important effect.
Nanometer Schottky junction structure mainly has Physical and the big class of chemical method two.
Chemical method has single electricity groove and double electricity channel process, has the disadvantage that during preparation nanometer Schottky junction structure
1. sample is bad with the associativity of substrate；
2. being affected by various factors due to experimental apparatus, it can not obtain the nano-particle that distribution of sizes is consistent；
3. in course of reaction, factors causes experimental result repeatability bad, and such as ambient humidity, medicine purity and gas are miscellaneous
Matter etc.；
4. the chemical combination such as sample preparation limits more, can only prepare metal nanoparticle or nano thin-film, it is impossible to oxide, nitride
Thing multilayer film.
The method of self assembly includes electron beam evaporation, molecular beam epitaxy, direct current reaction magnetron sputtering and rf magnetron sputtering
Deng hydatogenesis thin film, wherein the thickness of thin film is the least, by heat treatment etc., makes membrane structure that certain change to occur, occurs
Nanocluster or the structure of nanometer island, and then obtain the granule of nano-scale.But, these nanoclusters or nano island
Size is as the change for the treatment of conditions and changes, even if treatment conditions are the same sometimes, and the nanocluster size distribution obtained
Also and uneven, and sometimes there is also the phenomenon of reunion, it is impossible to obtain the extraordinary nano-particle of separation property.Self assembly
Method preparation process typically require and take several hours or the time of several days, nanometer schottky junction prepared by spin coating method
Time is the longest, and efficiency is low, it is impossible to needs are prepared in the industrialization meeting nanometer Schottky junction structure.
Summary of the invention
In order to solve prior art problem, it is an object of the invention to the deficiency overcoming prior art to exist, it is provided that a kind of
Utilize physical method to prepare the technique of nanometer Schottky junction structure, select different solutions, different size, no according to different demands
Control scattered situation with concentration and regulation boiling temps, then produce different nanometer schottky junctions thus probe into him
Various characteristics, technological operation is simple, and controllability is strong and reproducible.
Purpose is created, employing following technical proposals for reaching foregoing invention:
A kind of technique utilizing physical method to prepare nanometer Schottky junction structure, comprises the steps:
A. the selection of substrate and pretreatment: according to the requirement of the nanometer Schottky junction structure preparing microdevice, selects substrate, so
Afterwards substrate is carried out, obtains the substrate of dried and clean, standby；Described substrate preferably select semiconductor chip, sheet metal or
Polymer sheet；
B. the preparation of colloidal metal solution: the concentration selecting nano-metal particle is 5.0 × 1013～2.0 × 1011
The granularity of particles/ml and nano-metal particle is the nano-metal particle colloid solution of 3～30 nm, uses diluent,
Be 1:(3～10 according to the volume mixture ratio of nano-metal particle colloid solution and diluent) ratio, to nano metal
Seed lac liquid solution is diluted, and obtains nano-metal particle colloid dilute solution；When substrate is carried out pretreatment, it is preferred to use hydrogen
Substrate is carried out processing by fluorspar acid solution；The colloidal metal particle of the nano-metal particle colloid solution preferably employed is colloid
Any one metallic colloid or the most several hybrid metal colloids in gold, collargol, colloidal platinum and electrocuprol；Preferably employ
Diluent is water, dehydrated alcohol or ethanol；
C. prepare nanometer Schottky junction structure: in the nano metal functional layer that deposition on substrate thickness is 3～30 nm, use directly
The method boiling deposition, removal is the nano-metal particle colloid dilute solution of preparation in described step b, then by nano metal
Particle colloid dilute solution is added drop-wise on the substrate of described step a pretreatment be formed the liquid film of nano-metal particle solution, right
Liquid film on substrate heats, and makes liquid film be boiled, finally in deposition on substrate nano metal functional layer；Or use indirectly
The method boiling deposition, places a sheet metal on the substrate side through described step a pretreatment, and removal is in described step b
The nano-metal particle colloid dilute solution of preparation, is then added drop-wise to nano-metal particle colloid dilute solution on sheet metal,
Then by heating sheet metal so that the nano-metal particle colloid dilute solution on sheet metal is splashed to the base on side after boiling
On sheet, and then nano metallic colloid granule is deposited in substrate, finally in deposition on substrate nano metal functional layer；Preferably adopt
Moving liquid method with microdrop spraying method, inkjet printing methods or liquid-transfering gun, basad upper transfer nano-metal particle colloid dilutes
Solution, prepares liquid film in substrate；
D. post processing: the nano metal functional layer of preparation in described step c is carried out heat treatment, makes substrate and nano metal merit
Ergosphere combines and forms nanometer Schottky junction structure.
The present invention compared with prior art, has and the most obviously highlights substantive distinguishing features and remarkable advantage:
1. the present invention uses the method boiling deposition can solve the problem that prior art exists, in boiling deposition, even
The substrate placed in atmosphere can also directly be used, and it has only to the cleaning process that some are basic, the self assembly of prior art
Method preparation process typically requires and takes several hours or the time of several days, and the present invention boils deposition and needs only to a few minutes
Time, it addition, utilize the colloidal solid of fixed dimension, the equally distributed nanometer of same size can be obtained
Grain, heats to substrate to during substrate at dropping colloid solution, so that particles diffusion is evenly, and technique repeatable
Property good, for thermal conductivity than relatively low substrate, the method indirectly boiled can be used, place a steel disc on substrate side, logical
Cross heating steel disc so that the colloid solution on steel disc is splashed in the substrate on side, and then the colloidal solid of nano-scale is sunk
Amass in substrate；
2. the inventive method is simple, and operation is to substrate without particular/special requirement, and experimental repeatability is good, and the dispersion of granule is controlled, will
It is all to play a very important role nano-device development, in addition that the inventive method is applied to preparation and the research etc. of nano-device
The nanometer Schottky that nanometer Schottky contacts prepared by the inventive method overcomes other a few class self assemblies and prepared by spin coating method
The shortcoming of the time length of knot, thus the development to nano pyroelectric material is very helpful；
3. the nanoparticle size prepared by the inventive method is evenly distributed, good dispersion, and purity is high, and experimental repeatability is good, receives
Size and the deployment conditions of rice grain are controlled, and making nanometer Schottky contacts relative to additive method has speed fast, preparation letter
The advantages such as list is easy.
Accompanying drawing explanation
Fig. 1 is that the embodiment of the present invention one utilizes physical method to prepare the schematic diagram of technique of nanometer Schottky junction structure.
Fig. 2 is the figure of the atomic force microscope on the embodiment of the present invention one Ge sheet surface before dropping colloidal gold solution
Sheet.
Fig. 3 is the figure of the atomic force microscope on the embodiment of the present invention one Ge sheet surface after depositing colloidal gold nano grain
Sheet.
Fig. 4 is that the current/voltage of the nanogold particle layer of the nanometer Schottky junction structure of the embodiment of the present invention one preparation is bent
Line.
Fig. 5 is the figure of the atomic force microscope on the embodiment of the present invention two Ge sheet surface after depositing colloidal gold nano grain
Sheet.
Detailed description of the invention
Details are as follows for the preferred embodiments of the present invention:
Embodiment one:
In the present embodiment, seeing Fig. 1～4, a kind of technique utilizing physical method to prepare nanometer Schottky junction structure, including as follows
Step:
A. the selection of substrate and pretreatment: according to the requirement of the nanometer Schottky junction structure preparing microdevice, selects type of substrate
For Ge<111>substrate, the resistivity of germanium wafer is 10 Ω cm, first with fluohydric acid gas: the mol ratio of ammonium fluoride is that the BOE of 1:5 is molten
Immersion bubble Ge<111>substrate 5 minutes, more respectively with acetone and ethanol solution ultrasonic cleaning 10 minutes, then uses acetone, anhydrous
Ethanol, deionized water clean germanium wafer in succession, then use high pure nitrogen to dry up germanium wafer, are finally placed in drying baker at 80 DEG C drying
15 min, obtain the substrate of dried and clean, standby；
B. the preparation of colloidal metal solution: the concentration selecting nanogold particle is 7.0 × 1012Particles/ml and nanometer gold
The granularity of granule is the colloidal nano gold solution of 20nm, carries out regulating and controlling the dilution journey of colloidal nano gold solution the most according to demand
Degree, i.e. uses dehydrated alcohol diluent, according to the ratio that the volume mixture ratio of colloidal nano gold solution and dehydrated alcohol is 1:5
Example, is diluted nano Au colloid liquid solution, obtains nanometer gold colloid dilute solution；
C. prepare nanometer Schottky junction structure: use the method directly boiling deposition, use liquid-transfering gun removal to make in described step b
The droplet size of standby nanometer gold colloid dilute solution regulates to 10 μ L, is then added drop-wise to nanometer gold colloid dilute solution through institute
State the liquid film forming nano-Au solution on the Ge sheet of step a pretreatment, Ge sheet substrate is heated to 120 DEG C on warm table, from
And the liquid film on substrate is heated, make liquid film be boiled, finally on Ge sheet, deposit thickness is 20nm nanometer gold functional layer；
D. post processing: the nanometer gold functional layer of preparation in described step c is carried out subsequent anneal heat treatment, makes Ge sheet and nanometer
Gold functional layer combines and forms nanometer Schottky junction structure.The present embodiment, in preparation nanometer schottky junction, is annealed in the lehr, can
Crystalline material is formed so that the nano-particle prepared to be processed.
In the present embodiment, seeing Fig. 1～4, comparison diagram 2 and Fig. 3, by seeing with the picture of atomic force microscope
Arriving, the Ge sheet surface not dripping any colloidal gold solution and the Ge sheet surface dripping colloidal gold solution are entirely different, in fig. 2 only
Can see that there are some cuts on Ge sheet surface, the most then it can be seen that there is the good nanometer of a lot of dispersibility on Ge sheet surface
Grain.There is the little of cluster situation in these nano-particle, and therefore size is the most uniform.Fig. 4 is the nano-particle recorded
I-v curve, it can be seen that this Schottky has good rectification characteristic.The present embodiment utilizes the side boiling colloid drops
Method prepares nanostructured semi-conductor electronic device nanometer sbhs sensor, as it is shown in figure 1, the present embodiment method overcomes existing
Some preparation nanometer unmanageable deficiencies of schottky junction method, employing one is simple to operate, rectification characteristic good, material tack
Good and finely dispersed preparation method.Being mainly characterized by of the present embodiment method boils colloid solution, by dense to colloid solution
Degree, the control of size controls size and the electrical properties of nanometer schottky junction.Nanometer Xiao that the present embodiment is formed in the completed
Special base junction can produce voltage under certain temperature difference, or forms electric current under certain voltage, can be fabricated to sensing
Device device.It is embodied in prepare based on the technology boiling colloid microdroplet and is uniformly dispersed, the nanometer schottky junction of consistent size
New method.The present embodiment selects suitable substrate, prepares nanometer schottky junction by boiling colloid solution.In preparation process
In, not only can select the colloid solution of different materials, same material can also select variable concentrations and various sizes of colloid
Solution.The present embodiment method more can obtain consistent size, be uniformly dispersed prepare the method for nanometer Schottky junction structure with other compared with
Nano-particle, and operation is simple.The method controllability is good, and repeatability is high, therefore can prepare abundant nano junction
Structure material.
Embodiment two:
The present embodiment is essentially identical with embodiment one, is particular in that:
In the present embodiment, a kind of technique utilizing physical method to prepare nanometer Schottky junction structure, comprise the steps:
A. this step is identical with embodiment one；
B. the preparation of colloidal metal solution: the concentration selecting nanogold particle is 7.0 × 1012Particles/ml and nanometer gold
The granularity of granule is the colloidal nano gold solution of 20nm, carries out regulating and controlling the dilution journey of colloidal nano gold solution the most according to demand
Degree, i.e. uses dehydrated alcohol diluent, according to the ratio that the volume mixture ratio of colloidal nano gold solution and dehydrated alcohol is 1:8
Example, is diluted nano Au colloid liquid solution, obtains nanometer gold colloid dilute solution；
C. this step is identical with embodiment one；
D. this step is identical with embodiment one.
In the present embodiment, see Fig. 5, test result such as Fig. 4, it can be seen that there is a lot of dispersibility on Ge sheet surface very equally
Good nano-particle, the concentration of these nano-particle is sparse relative to example one a lot, therefore can be changed by regulation diluted concentration
Become the dispersibility of nano-particle.
Embodiment three:
The present embodiment is substantially the same as in the previous example, and is particular in that:
In the present embodiment, a kind of technique utilizing physical method to prepare nanometer Schottky junction structure, comprise the steps:
A. this step is identical with embodiment one；
B. this step is identical with embodiment one；
C. nanometer Schottky junction structure is prepared: use the method indirectly boiling deposition, by the Ge sheet through described step a pretreatment
A steel disc is placed on limit, uses liquid-transfering gun removal droplet size of the nanometer gold colloid dilute solution of preparation in described step b
Nanometer gold colloid dilute solution, to 10 μ L, is then added drop-wise on steel disc by regulation, then by heating steel disc, is heated to by steel disc
120 DEG C so that the nanometer gold colloid dilute solution on steel disc is splashed on the Ge sheet on side after boiling, and then by nanometer gold colloid
Granule is deposited in Ge sheet substrate, and finally on Ge sheet substrate, deposit thickness is the nanometer gold functional layer of 15nm；
D. this step is identical with embodiment one.
The present embodiment can be prepared based on the method indirectly boiling colloid microdroplet and is uniformly dispersed, the nanometer Schottky of consistent size
Knot.
Above in conjunction with accompanying drawing, the embodiment of the present invention is illustrated, but the invention is not restricted to above-described embodiment, it is also possible to
The purpose of the innovation and creation according to the present invention makes multiple change, under all spirit according to technical solution of the present invention and principle
The change made, modify, substitute, combine or simplify, all should be the substitute mode of equivalence, as long as meeting the goal of the invention of the present invention,
Utilize physical method to prepare the know-why of technique and the inventive concept of nanometer Schottky junction structure without departing from the present invention, all belong to
In protection scope of the present invention.
Claims (7)
1. one kind utilizes the technique that physical method prepares nanometer Schottky junction structure, it is characterised in that comprise the steps:
A. the selection of substrate and pretreatment: according to the requirement of the nanometer Schottky junction structure preparing microdevice, selects substrate, so
Afterwards substrate is carried out, obtains the substrate of dried and clean, standby；
B. the preparation of colloidal metal solution: the concentration selecting nano-metal particle is 5.0 × 1013～2.0 × 1011
The granularity of particles/ml and nano-metal particle is the nano-metal particle colloid solution of 3～30 nm, uses diluent,
Be 1:(3～10 according to the volume mixture ratio of nano-metal particle colloid solution and diluent) ratio, to nano metal
Seed lac liquid solution is diluted, and obtains nano-metal particle colloid dilute solution；
C. prepare nanometer Schottky junction structure: in the nano metal functional layer that deposition on substrate thickness is 3～30 nm, use directly
The method boiling deposition, removal is the nano-metal particle colloid dilute solution of preparation in described step b, then by nano metal
Particle colloid dilute solution is added drop-wise on the substrate of described step a pretreatment be formed the liquid film of nano-metal particle solution, right
Liquid film on substrate heats, and makes liquid film be boiled, finally in deposition on substrate nano metal functional layer；Or use indirectly
The method boiling deposition, places a sheet metal on the substrate side through described step a pretreatment, and removal is in described step b
The nano-metal particle colloid dilute solution of preparation, is then added drop-wise to nano-metal particle colloid dilute solution on sheet metal,
Then by heating sheet metal so that the nano-metal particle colloid dilute solution on sheet metal is splashed to the base on side after boiling
On sheet, and then nano metallic colloid granule is deposited in substrate, finally in deposition on substrate nano metal functional layer；
D. post processing: the nano metal functional layer of preparation in described step c is carried out heat treatment, makes substrate and nano metal merit
Ergosphere combines and forms nanometer Schottky junction structure.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step a, semiconductor chip, sheet metal or polymer sheet are selected in described substrate.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step a, when substrate is carried out pretreatment, hydrofluoric acid solution is used to be carried out substrate processing.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step b, the colloidal metal particle of the nano-metal particle colloid solution of employing is gold colloidal, collargol, colloidal platinum and colloid
Any one metallic colloid or the most several hybrid metal colloids in copper.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step c, microdrop spraying method, inkjet printing methods or liquid-transfering gun is used to move liquid method, basad upper transfer nano metal
Seed lac body dilute solution, prepares liquid film in substrate.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step a～d, control add the temperature of hot substrate, heat time heating time, heating power, nano-metal particle colloid dilute solution concentration,
The particle size of the nano material in the diluent kind of nano-metal particle colloid solution, nano-metal particle colloid solution and
Any one condition in heat treatment method or any several condition, prepare nanometer schottky junction.
Utilize the technique that physical method prepares nanometer Schottky junction structure the most according to claim 1, it is characterised in that: described
In step b, the diluent of employing is water, dehydrated alcohol or ethanol.
Priority Applications (1)
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| CN108063090A (en) * | 2017-12-14 | 2018-05-22 | 北京世纪金光半导体有限公司 | A kind of low barrier Schottky diode and preparation method thereof |
| CN110841881A (en) * | 2019-11-26 | 2020-02-28 | 清华大学 | Method for quickly preparing self-assembly coating driven by thermal induction tension gradient |
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