CN105845064B - Circuit stack structure - Google Patents
Circuit stack structure Download PDFInfo
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- CN105845064B CN105845064B CN201510018804.9A CN201510018804A CN105845064B CN 105845064 B CN105845064 B CN 105845064B CN 201510018804 A CN201510018804 A CN 201510018804A CN 105845064 B CN105845064 B CN 105845064B
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Abstract
The invention discloses a kind of circuit stack structures, and wherein circuit stack structure includes conductor layer, supporting part and protective layer.Conductor layer includes the metal wire of multiple partitioned arrangements, and supporting part is located in the gap between appointing two adjacent metal wires, and is electrically insulated with metal wire.Protective layer covers conductor layer and supporting part, by the support of supporting part, so that the region that the top surface of protective layer corresponds to supporting part is flushed with the region of corresponding each metal wire.
Description
Technical field
The present invention is about a kind of circuit stack structure, and in particular to a kind of circuit of active cell array substrate
Stacked structure.
Background technique
Fig. 1 is a kind of local top view of active cell array substrate 10 known.As shown in Figure 1, this active cell array
Substrate 10 includes a glass substrate 20, a driving chip 30, multiple data lines 40 and multi-strip scanning line 50.Data line 40, scanning
Line 50 and driving chip 30 are all configured in glass substrate 20.On the one hand this driving chip 30 couples data line 40 and scan line
50, on the other hand a flexible circuit board connection pad area 80 is connected through the transition line areas 60 in glass substrate 20.Transition wire
Road area 60 between driving chip 30 and flexible circuit board connection pad area 80, in cabling continue from flexible circuit board and connect
The cabling that area 80 arrives driving chip 30 is padded, to exchange signal between driving chip 30 and flexible circuit board connection pad area 80.
However, because there is the generation of scratch problem in transition line areas 60 without any scratch resistant design often.
Fig. 2 is the 2-2 sectional view of Fig. 1.As shown in Fig. 2, specifically, transition line areas 60 includes a circuit stack structure
70, it is configured on glass substrate 20 (glass), from the bottom to top sequentially includes an insulating layer 71 (GI), a conductor layer 72
(metal) with a protective layer 75 (passivation).Conductor layer 72 includes multiple metal wires for separating and being configured on insulating layer 71
73, protective layer 75 is covered on conductor layer 72.Due to having gap 74 between wantonly two adjacent wires 73, so that forming protective layer
When 75, protective layer 75 can be separately formed according to each metal wire 73 and the convex and concave feature in its gap 74 corresponding protrusion 76 with it is recessed
Concave portion 77.
However, due in this circuit stack structure 70 protrusion 76 and recessed portion 77 there is several formal each other
Difference, such as the difference that high and low fall is different or contact area is different, so that the protective layer 75 of this transition line areas 60 is by hard
When object streaks, recessed portion 77 is easy to cause to form stress centrostigma, alternatively, protrusion 76 bears excessive frictional force, in this way, will
Can not 72 route of effective protection conductor layer, and improve the risk that is destroyed of conductor layer 72, and then increase manufacture or maintenance cost.
Summary of the invention
The present invention provides a kind of active cell array substrate and its circuit stack structure, to this transition line areas of minimization
On protrusion and recessed portion existing difference each other, such as high and low fall or the different difference of contact area, to reduce this mistake
It crosses on line areas and streaks generated destructive power by hard object, reduce the risk that its interior route wrecks.
In one embodiment of the present invention, such active cell array substrate include a glass substrate, a driving chip,
One flexible circuit board connection pad area, a transition line areas.Driving chip is configured in glass substrate.Flexible circuit board connection pad area
It is configured in glass substrate.Transition line areas includes a circuit heap between driving chip and flexible circuit board connection pad area
Stack structure.Circuit stack structure is divided into multiple alternately arranged first areas and second area along glass substrate surface.Circuit heap
Stack structure includes a conductor layer No.1, multiple first supporting parts and a protective layer.Conductor layer No.1 is stacked in glass substrate, packet
Containing multiple the first metal wires for separating configuration.Each first metal wire is consistent with the regional scope of a wherein first area, and connects
Flexible circuit board connection pad area and driving chip.Appoint the regional scope in the gap between two adjacent first metal wires and wherein one the
The regional scope in two regions is consistent.First supporting part is respectively arranged in second area, and in segmentation shape, and with the first metal
Line, flexible circuit board connection pad area and driving chip are electrically insulated.Protective layer is covered in conductor layer No.1 and the first supporting part
On.In this way, passing through the support of the first supporting part, the top surface that protective layer is located at first area is located at the top of second area with protective layer
Face flushes.
It is embedded in the gap between appointing two adjacent first metal wires due to these first supporting parts, so that protective layer shape
Cheng Hou, the top surface that the top surface that protective layer is located at second area is substantially located at first area with protective layer is contour, before as padded as possible
The recessed portion generated respectively between corresponding wantonly two adjacent wires in known structure is stated, so that reducing aforementioned known structure
Middle protrusion and recessed portion existing high and low fall each other.In this way, can eliminate in aforementioned known structure on this transition line areas
Recessed portion will form the feature of stress centrostigma, and then protection circuit reduces and scratches risk, to improve qualification rate.
In conclusion due in the achievable aforementioned known structure of minimization of the present invention on transition line areas protrusion with it is recessed
Concave portion existing difference each other makes it whereby and reduces to streak generated frictional force by hard object, helps reduction its interior route and meets with
The risk being damaged, and then improve qualification rate, avoid manufacture or the increase of maintenance cost.In addition, in some embodiments, passing through
It is segmented the design of the first supporting part of shape, if there is external conductor to contact wherein one section of the first supporting part and the first metal wire simultaneously
And when generating electric connection, another external conductor can be reduced also while contacting the first supporting part and another first metal wire, and make
It is electrically connected to each other and the situation of short circuit at two first metal wires.
Detailed description of the invention
For above and other purpose, feature, advantage and embodiment of the invention can be clearer and more comprehensible, appended attached drawing it is detailed
Carefully it is described as follows:
Fig. 1 is a kind of local top view of active cell array substrate known.
Fig. 2 is the 2-2 sectional view of Fig. 1.
Fig. 3 A is active cell array substrate of the present invention in the local top view of an embodiment.
Fig. 3 B is the top view of another embodiment of active cell array substrate shown in Fig. 3 A.
Fig. 4 is Fig. 3 A in the I-I sectional view of first embodiment.
Fig. 5 is I-I sectional view of Fig. 3 A under a variation of first embodiment.
Fig. 6 is sectional view of the active cell array substrate of the present invention under another variation of first embodiment.
Fig. 7 is I-I sectional view of Fig. 3 A under a variation of second embodiment.
Fig. 8 is I-I sectional view of Fig. 3 A under another variation of second embodiment.
Fig. 9 is sectional view of the active cell array substrate of the present invention under the another variation of second embodiment.
Specific embodiment
It will clearly illustrate spirit of the invention below with attached drawing and detailed description, as person skilled in the art is understanding this
After the embodiment of invention, when that can be changed and be modified by the technology of teachings of the present invention, without departing from spirit of the invention
With range.
The present invention provides a kind of active cell array substrate and its circuit stack structure, to shorten in aforementioned known structure
Protrusion and recessed portion existing difference each other, such as high and low fall, friction level or the different difference of contact area, to reduce
Generated destructive power is streaked by hard object in this transition line areas, reduces the risk that its interior route wrecks.
Several embodiments will be exposed according to foregoing description below, it is aforementioned by minimization with the present invention is furture elucidated
The spirit of protrusion and recessed portion difference each other in known structure, however, following embodiment is only in the example of specification
Illustrate, the present invention is not limited to this.Designer can select technological means appropriate aforementioned known to reach according to above-mentioned spirit
Difference in structure between protrusion and recessed portion.
Fig. 3 A is active cell array substrate 100 of the present invention in the local top view of an embodiment, and Fig. 3 B is Fig. 3 A institute
The top view of another embodiment of the active cell array substrate shown.Please refer to Fig. 3 A, Fig. 3 B.This active cell array substrate
100 include a glass substrate 110, a driving chip 120, a pixel array 130, scan line area 140 (scan line), one
Data line area 150 (source line or data line) and a flexible circuit board connection pad area (FPC pad) 160.Data
Line area 150, scan line area 140, pixel array 130, driving chip 120 and flexible circuit board connection pad area 160 are all configured at glass
On glass substrate 110.There are multiple data lines in data line area 150, positioned at the side of pixel array 130, has in scan line area 140 more
Scan line, can be divided into two parts, be located at two opposite sides in data line area 150, and prolong towards two sides of pixel array 130
It stretches, and the data line (not shown) in data line area 150 and the scan line (not shown) in scan line area 140 all couple
In the ipsilateral of this driving chip 120.Flexible circuit board connection pad area 160 is located at the another of 120 relative scanning line area 140 of driving chip
Side, and driving chip 120 is connected through the transition line areas 200 in glass substrate 110.Transition line areas 200 is located at driving
Between chip 120 and flexible circuit board connection pad area 160, in cabling continue from flexible circuit board connection pad area 160 to drive
The cabling of dynamic chip 120, to exchange signal between driving chip 120 and flexible circuit board connection pad area 160.
Fig. 4 is Fig. 3 A in the I-I sectional view of first embodiment.Please refer to Fig. 3 A, Fig. 4.The transition line areas 200 includes
One circuit stack structure 300.Extending direction of the circuit stack structure 300 along 110 surface of glass substrate is divided into multiple be alternately arranged
First area A and second area B.Circuit stack structure 300 includes a conductor layer No.1 400, an insulating layer (in this first reality
Claim the first insulating layer 610 after applying in example), multiple first supporting parts 700 and a protective layer 800.
Conductor layer No.1 400 includes multiple first metal wires 410, these first metal wires 410 are separated arrangement, therefore,
Appointing between two adjacent first metal wires 410 has one first clearance G 1, and be separately connected can at every one first metal wire, 410 both ends
Scratch formula circuit board connection pad area 160 and driving chip 120.The range of each first area A is defined as just being equal to every one first gold medal
The region area that category line 410 is extended by flexible circuit board connection pad area 160 towards driving chip 120, and each first area A
Depth is by protective layer 800 to glass substrate 110.The range of each second area B is defined as just being equal to any above-mentioned first
The region area that clearance G 1 is extended by flexible circuit board connection pad area 160 towards driving chip 120.Each first supporting part 700 divides
Be not configured at appoint two adjacent first metal wires 410 between the first clearance G 1 (i.e. second area B) in, and with the first metal wire
410, flexible circuit board connection pad area 160 and driving chip 120 are electrically insulated.First insulating layer 610 is located in protective layer 800
Between glass substrate 110.Protective layer 800 is covered in conductor layer No.1 400, the first insulating layer 610 and these first supporting parts
On 700, positioned at the outermost of the opposite glass substrate 110 of circuit stack structure 300, and protective layer 800 is in the top surface of first area A
Substantially flushed with protective layer 800 in the top surface of second area B.
In this way, protrusion and recessed portion existing high and low fall each other can be reduced in aforementioned known structure, helps and disappear
Except the problem of recessed portion is formed stress centrostigma in aforementioned known structure, and then protection circuit, reduction scratch risk, to improve
Qualification rate.
Please refer to Fig. 3 A, Fig. 4.In first embodiment, the first insulating layer 610 is configured in glass substrate 110, for example, directly
Ground connection is located in glass substrate 110.Conductor layer No.1 400 is located on the first insulating layer 610, in other words, the first insulating layer 610
Between conductor layer No.1 400 and glass substrate 110 in addition the first insulating layer 610 be located directly in conductor layer No.1 400 with
Between glass substrate 110.
Each first supporting part 700 is located in conductor layer No.1 400, and coexists same layer plane with each first metal wire 410, meaning
That is, a bottom surface of each first supporting part 700 to a datum plane (such as 110 top surface of glass substrate) minimum perpendicular distance D1 with
The minimum perpendicular distance D2 of one bottom surface of each first metal wire 410 so far datum plane (such as 110 top surface of glass substrate) is equal.
In addition, protective layer 800 covers the first insulating layer 610, the first supporting part 700 and each first metal in this embodiment
When line 410, protective layer 800 covers the first supporting part 700 in each second area B, and two in each first supporting part 700 are opposite
Side directly contacts the first insulating layer 610, connects to block the entity of each first supporting part 700 and its first metal wire of two sides 410
Touching.
When production, the first insulating layer 610, conductor layer No.1 400 (the first metal wire 410 and the first supporting part 700) and guarantor
Sheath 800 is sequentially formed in glass substrate 110, makees basis by each first supporting part 700 and the first metal wire 410, is formed
Protective layer 800 afterwards forms opposite convex in the top surface of each first area A and second area B, to ensure protective layer 800
It is substantially flushed with protective layer 800 in the top surface of second area B in the top surface of first area A.Further, since protective layer 800 is filled up
Recess 430 between two opposite sides of each first supporting part 700 and its first metal wire of two sides 410, so that protective layer 800
Top surface also reflect the notched mark M for being aligned each recess 430, therefore two adjacent notched mark M are appointed in 800 top surface of protective layer
Between can define protective layer 800 in the top surface of each second area B.
It is understood that arriving, in the variation of this embodiment, the material of each first supporting part can be conductive metal or nonmetallic, such as
Amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin oxide, ITO) or
The semiconductor materials such as indium gallium zinc (indium gallium zinc oxide, IGZO), however, the present invention is not limited only to this.
The thickness (or height) of each first supporting part is identical as thickness (or the height) of each first metal wire, however, the present invention not only limits
In this.Each first supporting part is a pseudo- metal line pattern (Dummy pattern), can in a strip shape (as shown in Figure 3A) or segmentation shape
(as shown in Figure 3B), length are less than the length that each first metal wire extends to flexible circuit board connection pad area from driving chip,
To ensure that the both ends of the first supporting part will not connect flexible circuit board connection pad area and driving chip, however, the present invention not only limits
In this.
In addition, the first supporting part production of strip is upper relatively simple, cost of manufacture can be reduced in turn.And for segmentation shape
For first supporting part, if having external conductor while contacting wherein one section of the first supporting part and the first metal wire and generating electrical property
When connection, the design by being segmented shape can reduce another external conductor also while contact the first supporting part and another first metal
Line, and cause that two first metal wires are electrically connected to each other and the situation of short circuit.
Fig. 5 is I-I sectional view of Fig. 3 A under a variation of first embodiment.Please refer to Fig. 3 A, Fig. 5.Spy based on Fig. 4
Under sign, in a variation of first embodiment, the first supporting part 710 is fully filled in the first clearance G 1, and material contact its
The first metal wire of two sides 410, since the first supporting part 710 is non-conductor material, therefore, the of the first supporting part 710 and its two sides
One metal wire 410 is electrically insulated.
Since each first supporting part 710 is fully filled in the first clearance G 1, and each first supporting part 710 and its two sides
The first metal wire 410 it is coplanar, therefore, when protective layer 800 formation after, protective layer 800 is located at top surface and the protection of first area A
Layer 800 is coplanar positioned at the top surface of second area B.
It is understood that arriving, in the variation of this embodiment, the material of each first supporting part can be insulating materials or semiconductor material
Material, as amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin oxide,
ITO) or indium gallium zinc (indium gallium zinc oxide, IGZO) etc., however, the present invention is not limited only to this.Respectively
The thickness (or height) of first supporting part is identical as thickness (or the height) of each first metal wire, however, the present invention is not limited only to
This.Each first supporting part is a pseudo- metal line pattern (Dummy pattern), can in a strip shape (as shown in Figure 3A) or segmentation shape
(as shown in Figure 3B), length are less than the length that each first metal wire extends to flexible circuit board connection pad area from driving chip,
To ensure that the both ends of the first supporting part will not connect flexible circuit board connection pad area and driving chip, however, the present invention not only limits
In this.
Fig. 6 is sectional view of the active cell array substrate of the present invention under another variation of first embodiment.Please refer to figure
6.In another variation of first embodiment, circuit stack structure 300 is also comprising multiple parallel supporting parts 730 for separating configuration.
These parallel supporting parts 730 are arranged on the first insulating layer 610.In this variation, these parallel supporting parts 730 are only located at first
In the first area A of insulating layer 610.More specifically, these parallel supporting parts 730 are linearly or are segmented shape, in parallel with each other
It is arranged in the first area A of the first insulating layer 610, and is coated by each first metal wire 410, is i.e. these parallel supporting parts
730 are embedded in each first metal wire 410.
In this way, the first insulating layer 610, conductor layer No.1 400 and protective layer 800 are sequentially formed at glass substrate when production
On 110, basis is made by each parallel supporting part 730, so that the top surface of each first metal wire 410 and protective layer 800 are in the firstth area
The top surface of domain A all reflects the rough rough surface of these corresponding parallel supporting parts 730, such as each first metal wire
410 top surface forms multiple alignment and matches the protuberance 420 of these parallel supporting parts 730, and protective layer 800 is in first area A's
Top surface forms multiple alignment and matches the protrusion 820A of these parallel supporting parts 730.Make basis by each first supporting part 700,
So that protective layer 800 all reflects the uneven surface of these corresponding the first supporting parts 700, example in the top surface of second area B
As protective layer 800 forms alignment in the top surface of second area B and matches the protrusion 820B of the first supporting part 700.These protrusions
820A, 820B are distributed in mutually separatedly in the first area A and second area B of protective layer 800, and these protrusions 820A,
The top surface of 820B is all substantially flush.
In this way, can more reduce protrusion in aforementioned known structure since the top surface of protective layer forms uneven surface
With the recessed portion inconsistent difference of existing degree of friction each other, thus it can more reduce whereby and streak generated friction by hard object
Power, protection circuit, which is reduced, scratches risk, to improve qualification rate.
It is understood that arriving, in the variation of this embodiment, the material of each first supporting part can be conductive metal or nonmetallic, such as
Amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin oxide, ITO) or
Semiconductor materials, the materials of each parallel supporting part such as indium gallium zinc (indium gallium zinc oxide, IGZO) can be
Semiconductor material, such as amorphous silicon, however, the present invention is not limited only to this.The thickness (or height) of each first supporting part is put down with each
The thickness (or height) of row supporting part is identical, however, the present invention is not limited only to this.Each first supporting part and parallel supporting part difference
For a pseudo- metal line pattern (Dummy pattern), can in a strip shape (as shown in Figure 3A) or segmentation shape (as shown in Figure 3B), grow
Degree is less than each first metal wire and extends to the length of flexible circuit board connection pad area from driving chip, with ensure the first supporting part and
The both ends of parallel supporting part will not connect flexible circuit board connection pad area and driving chip, however, the present invention is not limited only to this.
Fig. 7 is I-I sectional view of Fig. 3 A under a variation of second embodiment.Please refer to Fig. 3 A, Fig. 7.This second implementation
In example, each first supporting part 700 and each first metal wire 411 coexist same layer plane, and insulating layer is (after in this second embodiment
Claim second insulating layer 620) the first supporting part 700 and each first metal wire 411 are covered, and it is located at conductor layer No.1 401 and protection
Between layer 801.
In a variation of second embodiment, when second insulating layer 620 covers the first supporting part in each second area B
When 700, second insulating layer 620 directly contacts glass substrate 110 in two opposite sides of each first supporting part 700, each to block
The material contact of first supporting part 700 and its first metal wire of two sides 411.
In this way, when production, conductor layer No.1 401 (the first metal wire 411 and the first supporting part 700), second insulating layer 620
It is sequentially formed in glass substrate 110 with protective layer 801, basis is made by each first metal wire 411 and the first supporting part 700,
Second insulating layer 620 and protective layer 801 after formation all form in the top surface of each first area A and second area B opposite
Convex, to ensure that protective layer 801 is substantially flushed with protective layer 801 in the top surface of second area B in the top surface of first area A.
In addition, since second insulating layer 620 has filled up two opposite sides and its first metal of two sides of each first supporting part 700
Recess 430 between line 411, so that the top surface of second insulating layer 620 also forms the concave portion 623 for being aligned each recess 430.
Therefore after protective layer 801 is formed, 801 top surface of protective layer also reflects multiple to be substantially aligned with these concave portions 623 one by one
Notched mark M.In this way, appointing for 801 top surface of protective layer just defines protective layer 801 in each the between two adjacent notched mark M
The top surface of two region B.
It is understood that arriving, in the variation of this embodiment, the material of each first supporting part can be conductive metal or nonmetallic, such as
Amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin oxide, ITO) or
The semiconductor materials such as indium gallium zinc (indium gallium zinc oxide, IGZO), however, the present invention is not limited only to this.
The thickness (or height) of each first supporting part is identical as thickness (or the height) of each first metal wire, however, the present invention not only limits
In this.Each first supporting part 700 is a pseudo- metal line pattern (Dummy pattern), can be in a strip shape (as shown in Figure 3A) or be divided
Section shape (as shown in Figure 3B), length are less than the length that each first metal wire extends to flexible circuit board connection pad area from driving chip
Degree, to ensure that the both ends of the first supporting part will not connect flexible circuit board connection pad area and driving chip, however, the present invention is not only
It is limited to this.
Fig. 8 is I-I sectional view of Fig. 3 A under another variation of second embodiment.Please refer to Fig. 3 A, Fig. 8.Based on Fig. 7's
Under feature, in another variation of second embodiment, circuit stack structure 300 is also comprising one second conductor layer 501 and multiple second
Supporting part 720.Second conductor layer 501 is between second insulating layer 620 and protective layer 801, for example, being located directly in second absolutely
Between edge layer 620 and protective layer 801.Second conductor layer 501 includes multiple second metal wires 510.These second metal wires 510 that
This partitioned arrangement in second insulating layer 620, therefore, appointing between two adjacent second metal wires 510 has one second clearance G 2, each the
Substantially aligned wherein one first clearance G 1 of two clearance G 2.Every one second metal wire, 510 both ends are separately connected flexible circuit board and connect
Pad area 160 and driving chip 120 (Fig. 3 A).Every one second metal wire 510 is by flexible circuit board connection pad area 160 towards driving chip
120 region areas extended are also equal to the range of each first area A.Appoint second between two adjacent second metal wires 510
Clearance G 2 is just equal to the range of each second area B.Each second supporting part 720, which is respectively arranged at, appoints two adjacent second metal wires
In the second clearance G 2 (i.e. second area B) between 510, and with the second metal wire 510, flexible circuit board connection pad area 160 and
Driving chip 120 is electrically insulated, such as avoids material contact.In this way, more passing through the first supporting part 700 and the second supporting part 720
Support so that protective layer 801 is substantially more flushed with protective layer 801 in the top surface of second area B in the top surface of first area A.
Protective layer 801 covers the second supporting part 720, each second metal wire 510 and second insulating layer 620.When protective layer 801
When covering the second supporting part 720 in each second area B, protective layer 801 directly connects in two opposite sides of each second supporting part 720
Second insulating layer 620 is touched, to block the material contact of each second supporting part 720 and its second metal wire of two sides 510.
It is understood that arrive, in the variation of this embodiment, each first supporting part, the second supporting part material can be conductive metal
Or it is nonmetallic, such as amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin
Oxide, ITO) or the semiconductor materials such as indium gallium zinc (indium gallium zinc oxide, IGZO), however, this hair
It is bright to be not limited only to this.The thickness (or highly) of the thickness (or height) of each first supporting part and each first metal wire is identical, and each the
The thickness (or height) of two supporting parts is identical as thickness (or the height) of each second metal wire, however, the present invention is not limited only to this.
Each first supporting part, the second supporting part are a pseudo- metal line pattern (Dummy pattern), can it is in a strip shape (as shown in Figure 3A) or
It is segmented shape (as shown in Figure 3B), length is less than each first metal wire, the second metal wire and extends to bendable electricity from driving chip
The length of road plate connection pad area, to ensure that the both ends of the first supporting part, the second supporting part will not connect flexible circuit board connection pad area
With driving chip, however, the present invention is not limited only to this.
In addition, the first supporting part of strip or the production of the second supporting part are upper relatively simple, cost of manufacture can be reduced in turn.And
For being segmented for the first supporting part or the second supporting part of shape, wherein first propped up for one section if there is external conductor simultaneously to contact
Portion's (or second supporting part) and the first metal wire (or second metal wire) and generate electric connection when, by be segmented shape design can
Reduce another external conductor also while contact the first supporting part (or second supporting part) and another first metal wire (or the second metal
Line), and cause that two first metal wires (or second metal wire) are electrically connected to each other and the situation of short circuit.
Fig. 9 is sectional view of the active cell array substrate of the present invention under the another variation of second embodiment.
Please refer to Fig. 9.Under feature based on Fig. 8, in the another variation of second embodiment, circuit stack structure 300 is also wrapped
Containing multiple third supporting parts 740 for separating configuration.These third supporting parts 740 divide regardless of first area A and second area B
It is arranged in the second insulating layer 620 every ground.More specifically, these third supporting parts 740 are linearly or are segmented shape, put down each other
It is arranged in second insulating layer 620, and is coated by each second metal wire 510 and the second supporting part 721 capablely, is i.e. part
These third supporting parts 740 are embedded in each second metal wire 510, these third supporting parts 740 of another part are embedded in each
In two supporting parts 721.
In this way, make basis by third supporting part 740, the second metal wire 510 after formation and protective layer 801 are all in each the
The top surface of one region A forms opposite convex, and the second supporting part 721 after being formed with protective layer 801 all in each second
The top surface of region B forms opposite convex, so that the top surface of protective layer 801 forms multiple mutually separated protrusions 821.These
Protrusion 821 is all distributed in the first area A and second area B of protective layer 801, is aligned these third supporting parts 740 respectively, and
The top surface of these protrusions 821 is all substantially flush.
In this way, since the top surface of protective layer forms uneven surface, therefore, it can more reduce and be swelled in aforementioned known structure
Portion and the recessed portion inconsistent difference of existing degree of friction each other, thus can more reduce whereby by hard object streak caused by rub
Power is wiped, protection circuit, which is reduced, scratches risk, to improve qualification rate.
It is understood that arrive, in the variation of this embodiment, each first supporting part, the second supporting part material can be conductive metal
Or it is nonmetallic, such as amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), indium tin oxide (indium tin
Oxide, ITO) or the semiconductor materials such as indium gallium zinc (indium gallium zinc oxide, IGZO), each third support
The material for holding portion can be semiconductor material, such as amorphous silicon, indium-zinc oxide (indium zinc oxide, IZO), the oxidation of indium tin
Object (indium tin oxide, ITO) or indium gallium zinc (indium gallium zinc oxide, IGZO) etc., however,
The present invention is not limited only to this.The thickness (or height) of each first supporting part is identical as thickness (or the height) of each first metal wire,
The thickness (or height) of each second supporting part is identical as thickness (or the height) of each second metal wire, however, the present invention not only limits
In this.The thickness (or height) of all third supporting parts is mutually the same, however, the present invention is not limited only to this.Each first supporting part,
Second supporting part is a pseudo- metal line pattern (Dummy pattern), can in a strip shape (as shown in Figure 3A) or segmentation shape (such as Fig. 3 B
It is shown), length extends to the length of flexible circuit board connection pad area less than each first metal wire, the second metal wire from driving chip
Degree, to ensure that the both ends of the first supporting part, the second supporting part will not connect flexible circuit board connection pad area and driving chip, so
And the present invention is not limited only to this.
In conclusion due in the achievable aforementioned known structure of minimization of the present invention on transition line areas protrusion with it is recessed
Concave portion existing difference each other makes it whereby and reduces to streak generated frictional force by hard object, helps reduction its interior route and meets with
The risk being damaged, and then improve qualification rate, avoid manufacture or the increase of maintenance cost.In addition, in some embodiments, passing through
It is segmented the design of the first supporting part of shape, if there is external conductor to contact wherein one section of the first supporting part and the first metal wire simultaneously
And when generating electric connection, another external conductor can be reduced also while contacting the first supporting part and another first metal wire, and make
It is electrically connected to each other and the situation of short circuit at two first metal wires.
Disclosed herein in each embodiment as above, it is not intended to limit the invention, it is any to be familiar with this those skilled in the art, not
It is detached from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore protection scope of the present invention is appended by the view
The range that is defined of claims subject to.
Claims (12)
1. a kind of circuit stack structure, which is characterized in that be configured on an active cell array substrate, have alternately arranged the
One region and second area, the circuit stack structure includes:
One conductor layer No.1 is stacked in a glass substrate of the active cell array substrate, includes multiple separation configurations
First metal wire, each first metal wire are consistent with the regional scope of a first area, appoint two adjacent described the
The regional scope in the gap between one metal wire is consistent with the regional scope of a second area；
Multiple first supporting parts, are located in the second area, first supporting part in each second area
In segmentation shape, and it is electrically insulated with the multiple first metal wire；And
One protective layer is covered on the conductor layer No.1 and the multiple first supporting part, wherein at least by the multiple
The support of first supporting part, so that the protective layer is located at the top surface of the first area and the protective layer is located at described the
The top surface in two regions flushes.
2. circuit stack structure according to claim 1, which is characterized in that each first supporting part with it is each described
The same layer plane of first metal wire coexistence.
3. circuit stack structure according to claim 1, which is characterized in that also include:
One first insulating layer, between the conductor layer No.1 and the glass substrate,
Wherein the protective layer is in contacting first insulating layer in the second area, and blocks each first supporting part
With the material contact of its two adjacent first metal wire.
4. circuit stack structure according to claim 1, which is characterized in that also include:
One second insulating layer, between the conductor layer No.1 and the protective layer,
Wherein the second insulating layer is in contacting the glass substrate in the second area, and blocks each described first and prop up
The material contact in portion and its two adjacent first metal wire.
5. circuit stack structure according to claim 4, which is characterized in that also include:
One second conductor layer includes multiple the second gold medals for separating configuration between the second insulating layer and the protective layer
Belong to line, each second metal wire is consistent with the regional scope of a first area, appoints two adjacent second metals
The regional scope in the gap between line is consistent with the regional scope of a second area；And
Multiple second supporting parts are configured between the second insulating layer and the protective layer and are located at secondth area
In domain, and it is electrically insulated with the multiple second metal wire.
6. circuit stack structure according to claim 5, which is characterized in that also include:
Multiple third supporting parts, are separatedly arranged in the second insulating layer, are located in the first area and second area,
And it is embedded in the multiple second metal wire and the multiple second supporting part respectively.
7. circuit stack structure according to claim 5, which is characterized in that the top surface of the protective layer includes multiple mutual
The recess of separation,
The second insulating layer only includes the impenetrating mouth of multiple partitioned arrangements in each first area, wherein each described
Second metal wire inserts the multiple impenetrating mouth and in contacting first metal wire in the multiple impenetrating mouth.
8. circuit stack structure according to claim 1, which is characterized in that each first supporting part with it is each described
First metal wire does not coexist same layer plane.
9. circuit stack structure according to claim 8, which is characterized in that each first supporting part is located at the glass
On glass substrate；And
The circuit stack structure also includes:
One first insulating layer, in each first area between the conductor layer No.1 and the glass substrate, in
In each second area between each first supporting part and the protective layer, and block each first support
Hold the material contact in portion Yu its two adjacent first metal wire.
10. circuit stack structure according to claim 8, which is characterized in that each first metal wire is located at described
In glass substrate；And
The circuit stack structure also includes:
One second insulating layer, in each first area between the conductor layer No.1 and the protective layer, in every
In one second area between the glass substrate and first supporting part, and block each first supporting part
With the material contact of its two adjacent first metal wire.
11. circuit stack structure according to claim 10, which is characterized in that also include:
Multiple 5th supporting parts, linearly or segmentation shape, are located in the first area, parallel to each other and be separatedly arranged in
In the second insulating layer, and it is embedded in the protective layer.
12. circuit stack structure according to claim 1, which is characterized in that the material of the multiple first supporting part is
Amorphous silicon or indium gallium zinc (indium gallium zinc oxide, IGZO).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510018804.9A CN105845064B (en) | 2015-01-14 | 2015-01-14 | Circuit stack structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510018804.9A CN105845064B (en) | 2015-01-14 | 2015-01-14 | Circuit stack structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845064A CN105845064A (en) | 2016-08-10 |
| CN105845064B true CN105845064B (en) | 2019-02-15 |
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| CN201510018804.9A Active CN105845064B (en) | 2015-01-14 | 2015-01-14 | Circuit stack structure |
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| CN109102772B (en) * | 2017-06-20 | 2023-11-21 | 昆山国显光电有限公司 | Driving circuit board and display device |
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| JP4466550B2 (en) * | 2005-12-08 | 2010-05-26 | ソニー株式会社 | Display device |
| US8803245B2 (en) * | 2008-06-30 | 2014-08-12 | Mcafee, Inc. | Method of forming stacked trench contacts and structures formed thereby |
| US8421243B2 (en) * | 2010-06-24 | 2013-04-16 | Headway Technologies, Inc. | Layered chip package and method of manufacturing same |
| CN103839907B (en) * | 2012-11-21 | 2016-08-31 | 瀚宇彩晶股份有限公司 | Active component array base board and circuit stack structure thereof |
| JP6104772B2 (en) * | 2013-03-29 | 2017-03-29 | ソニーセミコンダクタソリューションズ株式会社 | Laminated structure and manufacturing method thereof |
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