CN105842999B - A kind of method and device of development - Google Patents
A kind of method and device of development Download PDFInfo
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- CN105842999B CN105842999B CN201610390340.9A CN201610390340A CN105842999B CN 105842999 B CN105842999 B CN 105842999B CN 201610390340 A CN201610390340 A CN 201610390340A CN 105842999 B CN105842999 B CN 105842999B
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 239000011368 organic material Substances 0.000 claims abstract description 28
- 239000007921 spray Substances 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 abstract 2
- 239000011295 pitch Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Photosensitive Polymer And Photoresist Processing (AREA)
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Abstract
The invention discloses a kind of method and devices of development, belong to display field.The described method includes: obtaining the exposure spacing variable quantity of first position, the first position is launching position of the second position on mask plate, and the second position is the position on substrate；According to the exposure spacing variable quantity, the flow to the second position spray developing liquid is determined；According to the flow, the second position Xiang Suoshu spray developing liquid, the developer solution is used to etch the organic material positioned at the second place.Described device includes: to obtain module, determining module and sprinkling module.The present invention being capable of uniform each figure line width.
Description
Technical Field
The present invention relates to the field of display, and in particular, to a developing method and apparatus.
Background
In the display field, a developing method is often used to etch an organic material into a desired pattern. For example, in the fabrication of a TFT (Thin Film Transistor), an organic material is often deposited on a substrate, exposed, and then etched into a channel layer, a source/drain electrode, and the like by a developing method.
The current processes for exposing and developing organic materials may be: firstly, a mask plate is placed on a mask plate support of an exposure machine, a substrate deposited with organic materials is positioned below the mask plate, light is irradiated downwards from the upper part of the mask plate, and the organic materials positioned on the substrate are exposed. After the exposure is finished, developing solution is uniformly sprayed on the exposed organic material, and the exposed organic material is etched into a required pattern.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
because the mask plate is placed on the mask plate support of the exposure machine, the mask plate can be bent to a certain degree, so that the exposure distance (the distance from the middle part to the mask plate) of the middle part of the substrate is smaller than that of the edge part, the pattern line width of the middle part of the substrate after exposure is smaller than that of the edge part, and the line widths of all patterns on the substrate are inconsistent.
Disclosure of Invention
In order to make the line widths of the patterns on the substrate consistent, the embodiment of the invention provides a developing method and a developing device. The technical scheme is as follows:
in a first aspect, a method of development is provided, the method comprising:
acquiring the exposure interval variation of a first position, wherein the first position is a projection position of a second position on a mask plate, the second position is a position on a substrate, and the exposure interval variation of the first position is the difference between the exposure interval of the first position and the exposure interval of the edge of the mask plate;
determining the flow of the developer sprayed to the second position according to the exposure interval variation;
and spraying a developing solution to the second position according to the flow, wherein the developing solution is used for etching the organic material at the second position.
Optionally, the acquiring the exposure pitch variation of the first position includes:
calculating a first distance between a first position and the center point of a mask plate to calculate a second distance from a first midpoint to the edge of the mask plate, wherein the first midpoint is the midpoint of a connecting line of the first position and the center point of the mask plate;
and calculating the exposure space variation of the first position according to the first distance and the second distance.
Optionally, the calculating an exposure pitch variation of the first position according to the first distance and the second distance includes:
calculating the exposure pitch variation Δ h of the first position according to the following formula:
Δh＝H·[1-(l/L)n]
in the formula, H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center of the mask plate is a difference between the exposure distance of the center point of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
Optionally, the determining, according to the exposure interval variation, a flow rate of the developer sprayed to the second position includes:
calculating the line width variation of the graph at a second position according to the exposure space variation;
calculating the flow variation of the developing solution according to the line width variation of the graph, wherein the flow variation of the developing solution is the difference between the flow of the developing solution sprayed at the second position and the flow of the developing solution sprayed at the center of the substrate;
and calculating the flow of the developing solution sprayed to the second position according to the flow variation of the developing solution and the flow of the developing solution sprayed to the center of the substrate.
Optionally, the calculating a line width variation of the pattern at the second position according to the exposure pitch variation includes:
calculating the line width variation Δ CD of the pattern according to the following formula:
ΔCD＝k1·Δh
in the above formula, k1As a constant, Δ h is the exposure pitch variation.
Optionally, calculating a developer flow variation according to the pattern line width variation includes:
the developer flow change amount Δ F is calculated as follows:
ΔCD＝k2·ΔF
in the above formula, k2As a constant, Δ CD is the pattern line width variation.
Optionally, the spraying the developer to the second position according to the flow rate includes:
and controlling a developing solution nozzle positioned right above the second position to spray developing solution to the second position according to the flow.
In a second aspect, there is provided a developing apparatus, comprising:
the device comprises an acquisition module, a processing module and a control module, wherein the acquisition module is used for acquiring the exposure interval variation of a first position, the first position is a projection position of a second position on a mask plate, the second position is a position on a substrate, and the exposure interval variation of the first position is the difference between the exposure interval of the first position and the exposure interval of the edge of the mask plate;
the determining module is used for determining the flow of the developing solution sprayed to the second position according to the exposure interval variation;
and the spraying module is used for spraying a developing solution to the second position according to the flow, and the developing solution is used for etching the organic material at the second position.
Optionally, the obtaining module includes:
the first calculation unit is used for calculating a first distance between a first position and the center point of a mask plate so as to calculate a second distance from a first midpoint to the edge of the mask plate, wherein the first midpoint is the midpoint of a connecting line between the first position and the center point of the mask plate;
and the second calculating unit is used for calculating the exposure space variation of the first position according to the first distance and the second distance.
Optionally, the first calculating unit is configured to calculate an exposure pitch variation Δ h of the first position according to the following formula:
Δh＝H·[1-(l/L)n]
in the formula, H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center of the mask plate is a difference between the exposure distance of the center point of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
Optionally, the determining module includes:
a third calculation unit for calculating a variation of a line width of the pattern at a second position according to the variation of the exposure pitch;
a fourth calculating unit, configured to calculate a developer flow variation according to the pattern line width variation, where the developer flow variation is a difference between a developer flow sprayed at the second position and a developer flow sprayed at the center of the substrate;
and the fifth calculating unit is used for calculating the flow of the developing solution sprayed to the second position according to the developing solution flow variation and the developing solution sprayed flow at the central position of the substrate.
Optionally, the third calculating unit is configured to calculate a line width variation Δ CD of the pattern according to the following formula:
ΔCD＝k1·Δh
in the above formula, k1As a constant, Δ h is the exposure pitch variation.
Optionally, the fourth calculating unit is configured to calculate a developer flow variation Δ F according to the following formula:
ΔCD＝k2·ΔF
in the above formula, k2As a constant, Δ CD is the pattern line width variation.
Optionally, the spraying module comprises a control unit and at least one developing nozzle, and the at least one developing nozzle is located above the substrate;
and the control unit is used for controlling the developer nozzle which is positioned right above the second position to spray the developer to the second position according to the flow.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
because the exposure interval variable quantity of the first position projected by any second position on the substrate on the mask plate is obtained, the flow of spraying the developing solution to the second position is determined based on the exposure interval variable quantity, so that the total quantity of spraying the developing solution to the first graph with the larger line width of the graph is greater than the total quantity of spraying the developing solution to the second graph with the smaller line width of the graph, the line width of the etched first graph is greater than the line width of the etched second graph, the line widths of the etched first graph and the etched second graph are uniform, and the line widths of the graphs on the substrate are consistent.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1-1 is a schematic structural diagram of an exposure machine provided by an embodiment of the invention;
fig. 1-2 are schematic diagrams of mask structures provided by embodiments of the present invention;
FIG. 2 is a flowchart of a method of development provided by an embodiment of the present invention;
FIG. 3-1 is a flow chart of another method of development provided by embodiments of the present invention;
fig. 3-2 is a top view of a mask according to an embodiment of the present invention;
3-3 are top views of a developing device according to an embodiment of the present invention;
FIGS. 3 to 4 are schematic structural views of a developing device according to an embodiment of the present invention;
fig. 4 is a block diagram of a developing apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In the display field, exposure and development processes are required for a substrate on which an organic material is deposited. When the organic material is processed, firstly, a mask plate is placed on a mask plate support of an exposure machine, a substrate deposited with the organic material is placed below the mask plate, then, light is irradiated downwards from the upper part of the mask plate, the organic material on the substrate is exposed, and the organic material on the substrate forms a graph.
Referring to fig. 1-1 and 1-2, a mask 4 is placed on a mask holder 5 of an exposure machine, a substrate 2 deposited with an organic material 3 is placed on a table 1 of the exposure machine, and the mask 4 is bent to a certain extent, so that an exposure interval of a middle portion of the substrate is smaller than an exposure interval of an edge portion (the exposure interval of the middle portion of the mask is smaller than the exposure interval of the edge portion), and the exposure interval is a distance between the substrate 2 and the mask 4. For example, referring to fig. 1-2, the exposure gap G1 at the edge portion of the substrate is greater than the waterfall gap G2 at the center portion of the substrate 2. The smaller the exposure distance is, the smaller the line width of the formed pattern is, and the larger the exposure distance is, the larger the line width of the formed pattern is, so that the line width of the pattern in the middle part of the substrate is smaller than that of the pattern in the edge part of the substrate. For example, referring to fig. 1-1, the pattern line width CD2 at the edge portion of the substrate is greater than the pattern line width CD1 at the middle portion of the substrate. Therefore, after exposure, the line widths of the patterns on the substrate are not uniform, and the display panel manufactured by using the substrate has poor display effect.
After the exposure treatment is finished, a developing solution is sprayed to the substrate to etch away the organic material near the pattern formed by exposure, so as to etch the pattern formed by exposure. Among them, it should be noted that: the developer can etch the width of the pattern in addition to etching away the organic material near the pattern. Therefore, in the process of developing the substrate, the total amount of the developing solution sprayed to the part with the wider line width of the pattern is larger than the total amount of the developing solution sprayed to the part with the smaller line width of the pattern by controlling the flow of the developing solution sprayed to different positions of the substrate, so that for the pattern with the wider line width of the pattern, part of the width of the pattern is etched by the developing solution, and the line widths of the two patterns are equal. The specific process of the development treatment can be realized by any of the following embodiments.
Referring to fig. 2, an embodiment of the present invention provides a method of development, comprising:
step 201: and acquiring the exposure space variation of a first position, wherein the first position is a projection position of a second position on the mask plate, and the second position is a position on the substrate.
And the exposure space variation of the first position is the difference between the exposure space of the first position and the exposure space of the edge of the mask plate.
Step 202: and determining the flow of the developing solution sprayed to the second position according to the exposure interval variation.
Step 203: according to the flow, a developing solution is sprayed to the second position, and the developing solution is used for etching the organic material at the second position.
In the embodiment of the invention, because the exposure interval variation of any second position on the substrate at the projected first position on the mask plate is obtained, and the flow of the developing solution sprayed to the second position is determined based on the exposure interval variation, the total amount of the developing solution sprayed to the first graph with larger line width of the graph is ensured to be larger than the total amount of the developing solution sprayed to the second graph with smaller line width of the graph, the line width of the etched first graph is larger than the line width of the etched second graph, and the line widths of the two graphs are uniform.
The embodiment of the invention provides a developing method, which is used for developing organic materials on a substrate subjected to exposure treatment. Referring to fig. 3-1, the method includes:
step 301: and calculating a first distance between the first position and the center point of the mask plate, and calculating a second distance between the first center point and the edge of the mask plate.
The first position is a projection position of a second position on the substrate on the mask plate, and the second position is any position on the substrate. The first midpoint is the midpoint of a connecting line between the first position and the center point of the mask plate.
The method comprises the following steps: calculating a first distance according to the coordinates of the first position and the coordinates of the center point of the mask plate, and calculating the coordinates of a first middle point according to the coordinates of the first position and the coordinates of the center point of the mask plate; and determining the edge of the mask plate closest to the first midpoint in vertical distance according to the coordinate of the first midpoint, if the edge of the mask plate is parallel to the y axis, calculating a second distance according to the x axis coordinate of the first midpoint and the x axis coordinate of the edge of the mask plate, and if the edge of the mask plate is parallel to the x axis, calculating the second distance according to the y axis coordinate of the first midpoint and the y axis coordinate of the edge of the mask plate.
The x axis and the y axis are coordinate axes in a coordinate system of the mask plate, the coordinate system can use the center point of the mask plate as a coordinate origin, the x axis is parallel to the edges of two mask plates in the mask plate, and the y axis is parallel to the edges of the other two mask plates in the mask plate.
For example, referring to the top views of the mask shown in fig. 1-1 and 3-2, the mask comprises four mask edges 1, 2, 3 and 4. The first position A is the projection position of the second position B on the substrate on the mask plate, and the coordinate of the first position A is (x)a，ya) (ii) a The coordinate of the center point C of the mask plate is (x)c，yc) From the coordinates (x) of the first position Aa，ya) And the coordinate (x) of the center point C of the mask platec，yc) Calculating a first distanceAccording to the coordinates (x) of the first position Aa，ya) And the coordinate (x) of the center point C of the mask platec，yc) The coordinate of the first midpoint D is calculated as (x)d，yd)。
Wherein,
then according to the coordinate (x) of the first middle point Dd，yd) Determining the edge 1 of the mask closest to the first middle point, and calculating a second distance L ═ x1-xdL where x1Is the x-axis coordinate of mask edge 1.
Step 302: and calculating the exposure space variation of the first position according to the first distance and the second distance.
The exposure light pitch variation is a difference between an exposure pitch of the first position and an exposure pitch of the edge of the mask plate, or a difference between exposure pitches of the edge of the substrate (which may also be described as a difference between an exposure pitch of the first position at a corresponding second position on the substrate and an exposure pitch of the edge of the substrate).
The method comprises the following steps: the exposure pitch variation Δ h of the first position is calculated as the following formula (1):
Δh＝H·[1-(l/L)n]……(1)；
in the formula (1), H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center point of the mask plate is a difference between the exposure distance of the center point of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
The exposure space variation of the center point of the mask plate is measured in advance, and the deformation index of the first position is also measured in advance. The deformation index of the first position in the mask plate is used for representing the bending condition of the mask plate at the first position, is determined by the size of the mask plate and the carrying mechanism of the exposure machine together, and can be simulated and calculated in advance.
Step 303: and calculating the line width variation of the graph at the second position according to the exposure space variation of the first position.
Specifically, the pattern line width variation Δ CD is calculated as the following formula (2):
ΔCD＝k1·Δh……(2)；
in the above formula (2), k1As a constant, Δ h is the exposure pitch variation of the first position. k is a radical of1The value of (a) is more than 0 and less than 1, and the specific value is determined by the characteristics of the photoresist.
Step 304: and calculating the flow variation of the developing solution according to the line width variation of the pattern at the second position.
Wherein the developer flow variation is a difference between the developer flow sprayed at the second position and the developer flow sprayed at the center of the substrate.
The method comprises the following steps: the developer flow change amount Δ F is calculated as follows:
ΔCD＝k2·ΔF……(3)；
in the above formula (3), k2Is a constant value of k2The value of (a) is more than 0 and less than 1, and the specific value is determined by the characteristics of the photoresist.
Step 305: and calculating the flow of the developing solution sprayed to the second position according to the flow variation of the developing solution at the second position and the flow of the developing solution sprayed to the center of the substrate.
The flow rate of the developer sprayed at the center of the substrate may be a preset value. Before developing the organic material on the substrate, the flow of the developer sprayed to the center of the substrate is set. The method comprises the following steps: and adding the flow variation of the developing solution at the second position and the flow of the developing solution sprayed at the center of the substrate to obtain the flow of the developing solution sprayed to the second position.
Step 306: and spraying the developing solution to the second position according to the flow rate of the developing solution sprayed to the second position, wherein the developing solution is used for etching the organic material at the second position.
Therein, referring to fig. 3-3 and 3-4, in developing the organic material on the substrate, a developing device including at least one developer nozzle 9 may be mounted above the substrate. The developing device may further include a mounting module 8, and at least one nozzle 9 is mounted on the mounting module 8.
The method comprises the following steps: and controlling a developing solution nozzle positioned above the second position to spray developing solution to the second position according to the flow of the developing solution sprayed from the second position.
The developing device further comprises an inductor 7, the inductor 7 is mounted on the carrying module 8, a developing coordinate system is arranged in the carrying module 8, and each developing solution nozzle in the at least one developing solution nozzle in the developing coordinate system is provided with a corresponding position. The sensor 7 can sense the conversion relationship between the substrate coordinate system of the substrate and the developing coordinate system, and the developing solution nozzle right above the second position is determined according to the conversion relationship.
In the embodiment of the invention, because the exposure interval variation of any second position on the substrate at the projected first position on the mask plate is obtained, and the flow rate of spraying the developing solution to the second position is determined based on the exposure interval variation, the total amount of spraying the developing solution to the graph with larger line width of the graph is ensured to be larger than that to the graph with smaller line width of the graph, so that the width of the graph with larger line width is etched a little more, and the line width of each graph is further uniform.
Referring to fig. 4, an embodiment of the present invention provides an apparatus 400 for developing, the apparatus 400 including:
an obtaining module 401, configured to obtain an exposure pitch variation of a first position, where the first position is a projection position of a second position on a mask, the second position is a position on a substrate, and the exposure pitch variation of the first position is a difference between an exposure pitch of the first position and an exposure pitch of an edge of the mask;
a determining module 402, configured to determine, according to the exposure interval variation, a flow rate of spraying the developer to the second position;
and a spraying module 403, configured to spray a developing solution to the second location according to the flow rate, where the developing solution is used to etch the organic material located at the second location.
Optionally, the obtaining module 401 includes:
the first calculation unit is used for calculating a first distance between a first position and the center point of a mask plate so as to calculate a second distance from a first midpoint to the edge of the mask plate, wherein the first midpoint is the midpoint of a connecting line between the first position and the center point of the mask plate;
and the second calculating unit is used for calculating the exposure space variation of the first position according to the first distance and the second distance.
Optionally, the first calculating unit is configured to calculate an exposure pitch variation Δ h of the first position according to the following formula:
Δh＝H·[1-(l/L)n]
in the formula, H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center point of the mask plate is a difference between the exposure distance of the center point of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
Optionally, the determining module 402 includes:
a third calculation unit for calculating a variation of a line width of the pattern at a second position according to the variation of the exposure pitch;
a fourth calculating unit, configured to calculate a developer flow variation according to the pattern line width variation, where the developer flow variation is a difference between a developer flow sprayed at the second position and a developer flow sprayed at the center of the substrate;
and the fifth calculating unit is used for calculating the flow of the developing solution sprayed to the second position according to the developing solution flow variation and the developing solution sprayed flow at the central position of the substrate.
Optionally, the third calculating unit is configured to calculate a line width variation Δ CD of the pattern according to the following formula:
ΔCD＝k1·Δh
in the above formula, k1As a constant, Δ h is the exposure pitch variation.
Optionally, the fourth calculating unit is configured to calculate a developer flow variation Δ F according to the following formula:
ΔCD＝k2·ΔF
in the above formula, k2As a constant, Δ CD is the pattern line width variation.
Optionally, the spraying module 403 includes a control unit and at least one developing nozzle, and the at least one developing nozzle is located above the substrate;
and the control unit is used for controlling the developer nozzle which is positioned right above the second position to spray the developer to the second position according to the flow.
In the embodiment of the invention, because the exposure interval variation of any second position on the substrate at the projected first position on the mask plate is obtained, and the flow rate of spraying the developing solution to the second position is determined based on the exposure interval variation, the total amount of spraying the developing solution to the graph with larger line width of the graph is ensured to be larger than that to the graph with smaller line width of the graph, so that the width of the graph with larger line width is etched a little more, and the line width of each graph is further uniform.
It should be noted that: in the developing device provided in the above embodiment, only the division of the functional modules is illustrated in the development process, and in practical applications, the above function distribution may be completed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to complete all or part of the above described functions. In addition, the developing device and the developing method provided by the above embodiments belong to the same concept, and specific implementation processes thereof are described in the method embodiments for details, which are not described herein again.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
It will be understood by those skilled in the art that all or part of the steps for implementing the above embodiments may be implemented by hardware, or may be implemented by a program instructing relevant hardware, where the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a magnetic disk or an optical disk, etc.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (14)
1. A method of development, the method comprising:
acquiring exposure interval variation of a first position, wherein the first position is a projection position of a second position on a mask plate, the second position is a position on a substrate, the exposure interval variation of the first position is a difference value between the exposure interval of the first position and the exposure interval of the edge of the mask plate, and the substrate is provided with an organic material exposed by using the mask plate;
determining the flow of the developer sprayed to the second position according to the exposure interval variation;
and spraying a developing solution to the second position according to the flow, wherein the developing solution is used for etching the organic material at the second position.
2. The method of claim 1, wherein obtaining the exposure pitch variation for the first location comprises:
calculating a first distance between a first position and the center point of a mask plate to calculate a second distance from a first midpoint to the edge of the mask plate, wherein the first midpoint is the midpoint of a connecting line of the first position and the center point of the mask plate;
and calculating the exposure space variation of the first position according to the first distance and the second distance.
3. The method of claim 2, wherein said calculating a pitch change for exposure of said first location based on said first distance and said second distance comprises:
calculating the exposure pitch variation Δ h of the first position according to the following formula:
Δh＝H·[1-(l/L)n]
in the formula, H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center point of the mask plate is a difference between the exposure distance of the center point of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
4. The method of claim 1, wherein determining a flow rate of the developer sprayed to the second location based on the exposure pitch variation comprises:
calculating the line width variation of the graph at a second position according to the exposure space variation;
calculating the flow variation of the developing solution according to the line width variation of the graph, wherein the flow variation of the developing solution is the difference between the flow of the developing solution sprayed at the second position and the flow of the developing solution sprayed at the center of the substrate;
and calculating the flow of the developing solution sprayed to the second position according to the flow variation of the developing solution and the flow of the developing solution sprayed to the center of the substrate.
5. The method of claim 4, wherein calculating a line width variation of the pattern at the second location based on the exposure pitch variation comprises:
calculating the line width variation Δ CD of the pattern according to the following formula:
ΔCD＝k1·Δh
in the above formula, k1As a constant, Δ h is the exposure pitch variation.
6. The method of claim 4, wherein calculating a developer flow variation based on the feature line width variation comprises:
the developer flow change amount Δ F is calculated as follows:
ΔCD＝k2·ΔF
in the above formula, k2As a constant, Δ CD is the pattern line width variation.
7. The method of claim 1, wherein said spraying developer solution to said second location based on said flow rate comprises:
and controlling a developing solution nozzle positioned right above the second position to spray developing solution to the second position according to the flow.
8. An apparatus for developing, the apparatus comprising:
an obtaining module, configured to obtain an exposure interval variation of a first position, where the first position is a projection position of a second position on a mask, the second position is a position on a substrate, the exposure interval variation of the first position is a difference between an exposure interval of the first position and an exposure interval of an edge of the mask, and the substrate has an organic material exposed by using the mask;
the determining module is used for determining the flow of the developing solution sprayed to the second position according to the exposure interval variation;
and the spraying module is used for spraying a developing solution to the second position according to the flow, and the developing solution is used for etching the organic material at the second position.
9. The apparatus of claim 8, wherein the acquisition module comprises:
the first calculation unit is used for calculating a first distance between a first position and the center point of a mask plate so as to calculate a second distance from a first midpoint to the edge of the mask plate, wherein the first midpoint is the midpoint of a connecting line between the first position and the center point of the mask plate;
and the second calculating unit is used for calculating the exposure space variation of the first position according to the first distance and the second distance.
10. The apparatus according to claim 9, wherein the first calculation unit is configured to calculate the exposure pitch variation Δ h of the first position according to the following formula:
Δh＝H·[1-(l/L)n]
in the formula, H is an exposure distance variation of a center point of the mask plate, the exposure distance variation of the center point of the mask plate is a difference between the exposure distance of the center of the mask plate and the exposure distance of the edge of the mask plate, L is a first distance, L is a second distance, and n is a deformation index of the first position.
11. The apparatus of claim 8, wherein the determining module comprises:
a third calculation unit for calculating a variation of a line width of the pattern at a second position according to the variation of the exposure pitch;
a fourth calculating unit, configured to calculate a developer flow variation according to the pattern line width variation, where the developer flow variation is a difference between a developer flow sprayed at the second position and a developer flow sprayed at the center of the substrate;
and the fifth calculating unit is used for calculating the flow of the developing solution sprayed to the second position according to the developing solution flow variation and the developing solution sprayed flow at the central position of the substrate.
12. The apparatus according to claim 11, wherein the third calculation unit is configured to calculate the pattern line width variation Δ CD according to the following formula:
ΔCD＝k1·Δh
in the above formula, k1As a constant, Δ h is the exposure pitch variation.
13. The apparatus according to claim 11, wherein the fourth calculation unit is configured to calculate the developer flow rate change amount Δ F according to the following formula:
ΔCD＝k2·ΔF
in the above formula, k2As a constant, Δ CD is the pattern line width variation.
14. The apparatus of claim 8, wherein the spray module comprises a control unit and at least one developer nozzle, the at least one developer nozzle being located above the substrate;
and the control unit is used for controlling the developer nozzle which is positioned right above the second position to spray the developer to the second position according to the flow.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101441287A (en) * | 2008-12-29 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Real time supervisory circuit of holographic grating development process |
| CN103019028A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN103885298A (en) * | 2014-03-06 | 2014-06-25 | 京东方科技集团股份有限公司 | Exposure device and exposure system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4604773B2 (en) * | 2005-03-11 | 2011-01-05 | 株式会社ニコン | Foreign object detection apparatus, foreign object detection method, exposure apparatus, exposure method, and device manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101441287A (en) * | 2008-12-29 | 2009-05-27 | 中国科学院长春光学精密机械与物理研究所 | Real time supervisory circuit of holographic grating development process |
| CN103019028A (en) * | 2012-12-14 | 2013-04-03 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method thereof |
| CN103885298A (en) * | 2014-03-06 | 2014-06-25 | 京东方科技集团股份有限公司 | Exposure device and exposure system |
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