CN105839063A - Preparation method for pure-phase transparent cuprous oxide thin film - Google Patents

Preparation method for pure-phase transparent cuprous oxide thin film Download PDF

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Publication number
CN105839063A
CN105839063A CN201610225636.5A CN201610225636A CN105839063A CN 105839063 A CN105839063 A CN 105839063A CN 201610225636 A CN201610225636 A CN 201610225636A CN 105839063 A CN105839063 A CN 105839063A
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Prior art keywords
pure
cuprous oxide
cuprous
film
vacuum
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Inventor
杜文汉
杨景景
赵宇
张燕
刘珂琴
熊超
朱锡芳
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Changzhou Institute of Technology
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Changzhou Institute of Technology
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Publication of CN105839063A publication Critical patent/CN105839063A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a preparation method for a pure-phase transparent cuprous oxide thin film. The preparation method comprises the steps that a substrate is cleaned; a cuprous oxide thin film containing copper is prepared; and the cuprous oxide thin film containing the copper is subjected to postprocessing, so that the pure-phase cuprous oxide thin film is obtained. According to the preparation method for the pure-phase transparent cuprous oxide thin film, the cuprous oxide thin film containing the metallic copper is prepared under the specific argon oxygen atmosphere by adopting a conventional direct current reactive magnetron sputtering technology at first, then the annealing postprocessing technology is conducted under a certain atmosphere condition, and the pure-phase cuprous oxide thin film is obtained by strictly controlling the temperature and the time of postprocessing; and the direct current reactive magnetron sputtering technology and the postprocessing technology are combined, so that not only is high-speed deposition of cuprous oxide achieved, but also the pure-phase cuprous oxide thin film material is obtained.

Description

A kind of preparation method of the pure cuprous film of phase transparent Indium
Technical field
The present invention relates to the preparation method of a kind of pure cuprous film of phase transparent Indium, belong to area of solar cell.
Background technology
Solar cell is a kind of photovoltaic device being transformed into electric energy based on semiconductor pn junction absorption sunshine, its sunshine absorbed layer Material mainly includes crystalline silicon and compound film such as cadmium telluride, CIGS, cuprous oxide etc..
Cuprous oxide (Cu2O) being the direct band-gap semicondictor material of a kind of excellent performance, it can band band gap size be 2.1eV (corresponding wavelength is 590nm), it is seen that the absorption coefficient of light is high, add it have nontoxic, at a low price, the advantage such as abundant raw material, be Opto-electronic conversion and the important materials in research on utilization field.Theoretical calculating shows based on Cu2The solar battery efficiency limit of O up to 20%, after introducing suitable Intermediate Gray (intermediate band) especially by doping, based on cuprous oxide absorbed layer too The theoretical limit of positive electricity pond photoelectric transformation efficiency can further improve 60%.It addition, Cu2O has photocatalytic activity, Zao Shang Just have in individual century directly utilize cuprous oxide carry out visible light catalytic water cracking produce hydrogen.
Magnetically controlled DC sputtering technology as the method for manufacturing thin film of a kind of high speed deposition, the film sample consistency prepared is high, Deposition velocity is fast, and film performance is stable, and technological parameter controllability is high, is suitable for industrialized production.At direct current reaction magnetron sputtering During preparing cuprous oxide film, owing to using metal copper target and the reaction of argon oxygen gas mixture, the cuprous oxide of generation is thin Always with the secondary phase of metallic copper in film, thus reduce the photoelectric properties of cuprous oxide film.
Summary of the invention
The problems referred to above existed for the preparation method of the cuprous film of phase oxidation pure in prior art, the present invention provides a kind of pure mutually saturating The preparation method of bright cuprous oxide film, the present invention passes through effective aftertreatment technology, is changed into by the copper in cuprous oxide film Cuprous oxide, thus obtain single-phase cuprous oxide film, solving direct current reaction magnetron sputtering, can not to prepare pure phase oxidation cuprous thin The problem of film.
Technical scheme is as follows:
The preparation method of a kind of pure cuprous film of phase transparent Indium, comprises the steps:
Step 1: clean substrate；
Step 2: prepare cupric cuprous oxide film；
Step 3: cupric cuprous oxide film carries out post processing and obtains the cuprous film of pure phase oxidation.
Further, described step 1 comprises the steps:
Step 1-1: cutting quartz glass；
Step 1-2: the quartz glass of well cutting is soaked in glass cleaner；
Step 1-3: the quartz glass after glass cleaner soaks uses pure water ultrasonic cleaning；
Step 1-4: the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, is then placed in vacuum chamber.
Further, described step 2 comprises the steps:
Step 2-1: cavity vacuumizes so that background vacuum reaches 1 × 10-4Pa；
Step 2-2: 1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature～350 DEG C；
Step 2-3: be passed through high-purity argon gas, carries out magnetically controlled DC sputtering to metal copper target, to remove the oxide of target material surface；
Step 2-4: be passed through argon gas and two kinds of gases of oxygen, argon flow amount scope 5～20sccm, oxygen flow scope 0～3sccm, Chamber vacuum degree is made to maintain 0.3～10Pa after being passed through mixed gas；
Step 2-5: under argon oxygen gas mixture atmosphere, it is anti-that the metal copper target using pre-sputtering to process carries out direct current on quartz glass substrate Answer magnetron sputtering, deposit cupric cuprous oxide film.
Further, described step 3 comprises the steps:
Step 3-1: use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
Step 3-2: cupric cuprous oxide sample is heated to 250～350 DEG C；
Step 3-3: be passed through high-purity argon gas and oxygen mixture in vacuum chamber so that air pressure range 0.3Pa of vacuum chamber～100Pa, Wherein argon concentration 0%～95%, oxygen concentration 5%～100%；
Step 3-4: cupric cuprous oxide sample under the argon oxygen gas mixture of air pressure range 0.3Pa～100Pa, 250～350 DEG C of temperature In the range of be incubated 0.5h～10h；
Step 3-5: sample stops heating cooling, uses molecular pump that chamber vacuum is extracted into 1 × 10-4Pa；
Step 3-6: pour after high pure nitrogen reaches atmospheric pressure in vacuum chamber, take out sample.
Further, the parameter during magnetically controlled DC sputtering is:
Target power density 2～10W/cm2, argon oxygen gas mixture, technique vacuum 0.3～10Pa, underlayer temperature room temperature～350 DEG C, Sedimentation time 1～30min, film thickness is 50～2000nm.
Beneficial effects of the present invention is as follows:
By direct current reaction magnetron sputtering and the combination of aftertreatment technology, i.e. realize the high speed deposition of cuprous oxide, obtain again pure phase Cuprous oxide thin film material.
Accompanying drawing explanation
Fig. 1 is cupric cuprous oxide and the cuprous XRD comparison diagram of pure phase oxidation.
Detailed description of the invention
With embodiment, the present invention is described in further detail below in conjunction with the accompanying drawings.
The present invention first uses the direct current reaction magnetron sputtering technology of routine, prepares the oxygen containing metallic copper under specific argon oxygen atmosphere Change cuprous film, under certain atmospheric condition, then carry out aftertreatment technology of annealing, by the strict temperature controlling post processing and Time obtains the cuprous film of pure phase oxidation.Specific embodiment is as follows:
Embodiment one
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: prepare cupric cuprous oxide film:
1, cavity vacuumizes so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass substrate is room temperature；
3, it is passed through high-purity argon gas, metal copper target is carried out magnetically controlled DC sputtering 5 minutes, to remove the oxide of target material surface；
4, it is passed through argon gas, argon flow amount 5sccm so that chamber vacuum degree maintains 0.3Pa；
5, under an argon, the metal copper target using pre-sputtering to process carries out direct current reaction magnetron sputtering on quartz glass substrate, Deposition cupric cuprous oxide film.
The technological parameter of direct current reaction magnetron sputtering is:
Target power density 2W/cm2, argon gas, technique vacuum 0.3Pa, underlayer temperature room temperature, sedimentation time 30min is thin Film thickness is 300nm.
The sample prepared by above-mentioned condition is shown to be the cuprous oxide structure containing metallic copper through XRD test.
3rd step: cupric cuprous oxide film carry out post processing obtain the cuprous film of pure phase oxidation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, cupric cuprous oxide sample is heated to 250 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that the air pressure of vacuum chamber is 100Pa, wherein argon concentration 5%, Oxygen concentration 95%；
4, cupric cuprous oxide sample is under the argon oxygen gas mixture of 100Pa, 250 DEG C of insulation 10h；
5, sample stops heating cooling, uses molecular pump that chamber vacuum is extracted into 1 × 10-4Pa；
6, pour after high pure nitrogen reaches atmospheric pressure in vacuum chamber, take out sample.Film color now is transparent yellow.
Embodiment two
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: prepare cupric cuprous oxide film:
1, cavity vacuumizes so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is 200 DEG C；
3, it is passed through high-purity argon gas, metal copper target is carried out magnetically controlled DC sputtering 5 minutes, to remove the oxide of target material surface；
4, it is passed through argon gas and two kinds of gases of oxygen, argon flow amount scope 10sccm, oxygen flow scope 1.5sccm, is passed through mixing Chamber vacuum degree is made to maintain 3Pa after gas；
5, under argon oxygen gas mixture atmosphere, the metal copper target using pre-sputtering to process carries out direct current reaction magnetic control on quartz glass substrate Sputtering, deposits cupric cuprous oxide film.
The technological parameter of direct current reaction magnetron sputtering is:
Target power density 5W/cm2, argon oxygen gas mixture, technique vacuum 3Pa, 200 DEG C, underlayer temperature room, sedimentation time 20min, Film thickness is 1000nm.
The sample prepared by above-mentioned condition is shown to be the cuprous oxide structure containing metallic copper through XRD test.
3rd step: cupric cuprous oxide film carry out post processing obtain the cuprous film of pure phase oxidation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, cupric cuprous oxide sample is heated to 300 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that air pressure range 30Pa of vacuum chamber, wherein argon concentration 80%, oxygen concentration 20%；
4, cupric cuprous oxide sample is under the argon oxygen gas mixture of air pressure range 30Pa, 300 DEG C of insulation 3h；
5, sample stops heating cooling, uses molecular pump that chamber vacuum is extracted into 1 × 10-4Pa；
6, pour after high pure nitrogen reaches atmospheric pressure in vacuum chamber, take out sample.Film color now is transparent yellow.
Embodiment three
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: prepare cupric cuprous oxide film:
1, cavity vacuumizes so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is 350 DEG C；
3, it is passed through high-purity argon gas, metal copper target is carried out magnetically controlled DC sputtering 5 minutes, to remove the oxide of target material surface；
4, it is passed through argon gas and two kinds of gases of oxygen, argon flow amount 20sccm, oxygen flow 3sccm, makes after being passed through mixed gas Chamber vacuum degree maintains 10Pa；
5, under argon oxygen gas mixture atmosphere, the metal copper target using pre-sputtering to process carries out direct current reaction magnetic control on quartz glass substrate Sputtering, deposits cupric cuprous oxide film.
The technological parameter of direct current reaction magnetron sputtering is:
Target power density 10W/cm2, argon oxygen gas mixture, technique vacuum 10Pa, underlayer temperature 350 DEG C, sedimentation time 15min, Film thickness is 3000nm.
The sample prepared by above-mentioned condition is shown to be the cuprous oxide structure containing metallic copper through XRD test, and display is at Fig. 1 In.
3rd step: cupric cuprous oxide film carry out post processing obtain the cuprous film of pure phase oxidation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, cupric cuprous oxide sample is heated to 350 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that the air pressure of vacuum chamber is 100Pa, wherein argon concentration 95%, oxygen concentration 5%；
4, cupric cuprous oxide sample is under the argon oxygen gas mixture of air pressure range 100Pa, 350 DEG C of insulation 0.5h；
5, sample stops heating cooling, uses molecular pump that chamber vacuum is extracted into 1 × 10-4Pa；
6, pour after high pure nitrogen reaches atmospheric pressure in vacuum chamber, take out sample.Film color now is transparent yellow.
Sample after annealing is shown to be the cuprous structure of pure phase oxidation through XRD test, and display is in FIG
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention.All spirit in the present invention and former Any amendment, equivalent and the improvement etc. made within then, should be included within the scope of the present invention.

Claims (5)

1. a preparation method for the pure cuprous film of phase transparent Indium, comprises the steps:
Step 1: clean substrate；
Step 2: prepare cupric cuprous oxide film；
Step 3: cupric cuprous oxide film carries out post processing and obtains the cuprous film of pure phase oxidation.
The preparation method of a kind of pure cuprous film of phase transparent Indium the most according to claim 1, it is characterised in that: described step 1 Comprise the steps:
Step 1-1: cutting quartz glass；
Step 1-2: the quartz glass of well cutting is soaked in glass cleaner；
Step 1-3: the quartz glass after glass cleaner soaks uses pure water ultrasonic cleaning；
Step 1-4: the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, is then placed in vacuum chamber.
The preparation method of a kind of pure cuprous film of phase transparent Indium the most according to claim 1, it is characterised in that: described step 2 Comprise the steps:
Step 2-1: cavity vacuumizes so that background vacuum reaches 1 × 10-4Pa；
Step 2-2: 1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature～350 DEG C；
Step 2-3: be passed through high-purity argon gas, carries out magnetically controlled DC sputtering to metal copper target, to remove the oxide of target material surface；
Step 2-4: be passed through argon gas and two kinds of gases of oxygen, argon flow amount scope 5～20sccm, oxygen flow scope 0～3sccm, Chamber vacuum degree is made to maintain 0.3～10Pa after being passed through mixed gas；
Step 2-5: under argon oxygen gas mixture atmosphere, it is anti-that the metal copper target using pre-sputtering to process carries out direct current on quartz glass substrate Answer magnetron sputtering, deposit cupric cuprous oxide film.
The preparation method of a kind of pure cuprous film of phase transparent Indium the most according to claim 1, it is characterised in that: described step 3 Comprise the steps:
Step 3-1: use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
Step 3-2: cupric cuprous oxide sample is heated to 250～350 DEG C；
Step 3-3: be passed through high-purity argon gas and oxygen mixture in vacuum chamber so that air pressure range 0.3Pa of vacuum chamber～100Pa, Wherein argon concentration 0%～95%, oxygen concentration 5%～100%；
Step 3-4: cupric cuprous oxide sample under the argon oxygen gas mixture of air pressure range 0.3Pa～100Pa, 250～350 DEG C of temperature In the range of be incubated 0.5h～10h；
Step 3-5: sample stops heating cooling, uses molecular pump that chamber vacuum is extracted into 1 × 10-4Pa；
Step 3-6: pour after high pure nitrogen reaches atmospheric pressure in vacuum chamber, take out sample.
The preparation method of a kind of pure cuprous film of phase transparent Indium the most according to claim 3, it is characterised in that: direct magnetic control spatters Parameter during penetrating is:
Target power density 2～10W/cm2, argon oxygen gas mixture, technique vacuum 0.3～10Pa, underlayer temperature room temperature～350 DEG C, Sedimentation time 1～30min, film thickness is 50～2000nm.
CN201610225636.5A 2016-04-12 2016-04-12 Preparation method for pure-phase transparent cuprous oxide thin film Pending CN105839063A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117966117A (en) * 2024-04-01 2024-05-03 苏州博志金钻科技有限责任公司 Copper-clad plate based on magnetron sputtering and surface treatment method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254950A (en) * 2011-07-12 2011-11-23 北京大学深圳研究生院 Cuprous oxide thin film transistor and preparing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254950A (en) * 2011-07-12 2011-11-23 北京大学深圳研究生院 Cuprous oxide thin film transistor and preparing method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HAILING ZHU等: ""Cu2O thin films deposited by reactive direct current magnetron sputtering"", 《THIN SOLID FILMS》 *
LI BIN-BIN等: ""Effect of Oxygen Content on Structural and Optical Properties of Single Cu2O Film by Reactive Magnetron Sputtering Method"", 《J. SHANGHAI JIAOTONG UNIV(SCI)》 *
YUN SEOG LEE等: ""Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering"", 《APPLIED PHYSICS LETTERS》 *
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117966117A (en) * 2024-04-01 2024-05-03 苏州博志金钻科技有限责任公司 Copper-clad plate based on magnetron sputtering and surface treatment method thereof

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Application publication date: 20160810