CN105836717A - Preparation method of aluminum nitride electronic ceramic powder - Google Patents
Preparation method of aluminum nitride electronic ceramic powder Download PDFInfo
- Publication number
- CN105836717A CN105836717A CN201610156386.4A CN201610156386A CN105836717A CN 105836717 A CN105836717 A CN 105836717A CN 201610156386 A CN201610156386 A CN 201610156386A CN 105836717 A CN105836717 A CN 105836717A
- Authority
- CN
- China
- Prior art keywords
- powder
- carbon
- aluminium
- aluminium nitride
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
- C01B21/0726—Preparation by carboreductive nitridation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
A preparation method of an aluminum nitride electronic ceramic powder comprises the steps: S1, mixing raw materials, namely mixing an alumina powder and a metal aluminum powder with each other; S2, sintering in an inert environment, and sintering the mixed powder; S3, mixing the alumina multi-oxide powder with a carbon powder, and sintering; and S4, carrying out carbon removal operation, namely carrying out carbon removal operation on a primary aluminum nitride powder to obtain the aluminum nitride electronic ceramic powder. The alumina powder has multiple oxides, so in an carbon thermal reduction reaction, reaction activation energy can be reduced; by changing the valence of aluminum ions, high-valence aluminum ions are transformed into low-valence aluminum ions, and the purposes of improving the alumina activity, reducing the carbon thermal reduction temperature and shortening the reduction time are achieved; and due to decrease of the reduction temperature and shortening of the reduction time, the problem in the prior art that aluminum nitride has high production energy consumption is solved.
Description
Technical field
The present invention relates to technical field of integrated circuits, more specifically, nitrogenize particularly to one
The preparation method of aluminum electronic ceramic powder.
Background technology
Aluminium nitride electronic ceramics is a kind of new function ceramic material, has good heat conductivity
Energy, reliable electrical insulating property, low dielectric loss and dielectric constant, adaptable is to pass through
The tape casting is processed as large-scale integrated circuit substrate, also can be as high grade refractory and optics
Device, wear resistant appliance.
The substrate of integrated circuit mainly has aluminium oxide ceramics (Al in the market2O3), cube nitridation
Boron (BN), beryllium oxide (BeO).The advantage of aluminium oxide ceramics is that dielectric loss is low, mechanical strength
The features such as height, chemical stability are good.But, the lower thermal conductivity of aluminium oxide ceramics limits partly leads
Body member is to high density, the development in high-performance direction.Cubic boron nitride (BN) is as highly thermally conductive material
Material is used as semiconductor-based piece performance and is better than aluminium oxide ceramics, the most preliminary market, but
BN complicated process of preparation is promoted by expensive being unfavorable for.Beryllium oxide (BeO) ceramic heat-dissipating performance is excellent
Good, but owing to beryllium oxide powder has severe toxicity so that it is complicated process of preparation, cost increases, and limits
Its popularization and use.
The aluminium nitride ceramics (AIN) that developed recently gets up has that thermal conductivity is high, thermal coefficient of expansion is low,
The advantages such as the mechanical performance that electrical insulating property is stable, dielectric properties are excellent, good are it is considered to be new
The rationality material of generation ceramic substrate.Synthesis of AlN Powders by Carbonthermal Reduction Method is temperature required the highest
At 1600～1700 DEG C, temperature retention time needs 10～12h, so that the preparation of aluminium nitride exists
The problem that energy consumption is higher.
Summary of the invention
(1) technical problem
How to solve the problem that in conventional art, the energy consumption of aluminium carbide preparation existence is higher.
(2) technical scheme
The invention provides the preparation method of a kind of aluminium nitride electronic ceramic powder, the method includes
Step:
S1, raw material mix, and purity is not less than the alumina powder of 99.99% and is not less than with purity
The metallic aluminium powder of 99.99% is mutually mixed uniformly makes mixed-powder, wherein, and alumina powder content
Being 90～100wt%, metallic aluminium powder content is 0～10wt%；
S2, inert environments sinter, and are carried out by described mixed-powder normal pressure-sintered in an inert atmosphere,
Its sintering temperature is 900 DEG C～1100 DEG C, then carries out the insulation of 4h～5h, prepares after lowering the temperature with stove
The multiple oxide powder of aluminium oxide；
S3, nitrogen environment sinter, and are not less than with purity by multiple for described aluminium oxide oxide powder
The carbon dust of 99.99% is 1.5～2.5: 1 to mix according to mass ratio, is blended with the institute of carbon dust
State the multiple oxide powder of aluminium oxide to carry out in a nitrogen environment normal pressure-sintered making primary aluminium nitride
Powder, its sintering temperature is 1400 DEG C～1500 DEG C, sintering time is 5h～6h, nitrogen flow is
0.4m3/h～1.0m3/h；
S4, de-carbon operate, and described primary aluminium nitride powder is carried out de-carbon operation and makes aluminium nitride
Electronic ceramic powder, its de-carbon temperature is 600 DEG C～700 DEG C, the de-carbon time is 4h～6h.
Preferably, in described step S2, mixed-powder is utilized in an inert atmosphere graphite earthenware
Crucible carries out normal pressure-sintered；In described step S4, described primary aluminium nitride powder is utilized oxidation
Aluminum crucible is that container carries out de-carbon operation in de-carbon stove.
Preferably, in described step S2, described inert environments is helium environment or argon ring
Border.
Preferably, the mean diameter of described alumina powder is not more than 1 micron；Described metallic aluminium powder
Mean diameter is not more than 1 micron.
(3) beneficial effect
In the preparation method of the aluminium nitride electronic ceramic powder of present invention offer, aluminium nitride electronics
Ceramic powders is to utilize alumina powder and metallic aluminium powder to be mutually mixed uniformly in proportion, at a constant temperature
It is sintered under degree being prepared from, the alumina powder obtained after treatment exists many heavy oxygens
Compound, can reduce reaction activity in carbothermic reduction reaction, this technique compared to without
Process alumina powder nitriding temperature that is 1600 DEG C～1700 DEG C be reduced to what the present invention was applied
1400 DEG C～1500 DEG C, temperature retention time is dropped to 5h～6h by original 10h～12h, by changing
Aluminum ions quantivalence, is changed into aluminium ion at a low price by the aluminium ion of high price, has reached to improve
The activity of aluminium oxide, reduction carbon thermal reduction temperature and the purpose of recovery time, due to reduction temperature
Decline, the recovery time reduces, and solves the one-tenth production capacity consumption that in prior art, aluminium nitride exists high
Problem.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of aluminium nitride electronic ceramic powder in the embodiment of the present invention；
Fig. 2 is the experiment detection chart of the embodiment of the present invention 1, embodiment 2 and comparative example.
Detailed description of the invention
With embodiment, embodiments of the present invention are described in further detail below in conjunction with the accompanying drawings.
Following example are used for illustrating the present invention, but can not be used for limiting the scope of the present invention.
In describing the invention, except as otherwise noted, " multiple " are meant that two or two
Above；Term " on ", D score, "left", "right", " interior ", " outward ", " front end ", " rear end ",
The orientation of the instruction such as " head ", " afterbody " or position relationship be based on orientation shown in the drawings or
Position relationship, is for only for ease of the description present invention and simplifies description rather than instruction or hint
The device of indication or element must have specific orientation, with specific azimuth configuration and operation,
Therefore it is not considered as limiting the invention.Additionally, term " first ", " second ", "
Three " etc. it is only used for describing purpose, and it is not intended that instruction or hint relative importance.
In describing the invention, it should be noted that unless otherwise clearly defined and limited,
Term " is connected ", " connection " should be interpreted broadly, and connects for example, it may be fixing, it is possible to
Being to removably connect, or it is integrally connected；Can be to be mechanically connected, it is also possible to be electrical connection；
Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary.Common for this area
For technical staff, above-mentioned term concrete meaning in the present invention can be understood with concrete condition.
Refer to Fig. 1, Fig. 1 is the preparation side of aluminium nitride electronic ceramic powder in the embodiment of the present invention
The flow chart of method.
The invention provides the preparation method of a kind of aluminium nitride electronic ceramic powder, the method includes:
Step S1, purity is not less than the alumina powder of 99.99% it is not less than 99.99% with purity
Metallic aluminium powder be mutually mixed and uniformly make mixed-powder, wherein, alumina powder content is
90～100wt%, metallic aluminium powder content is 0～10wt%；
Step S2, being carried out by mixed-powder normal pressure-sintered in an inert atmosphere, its sintering temperature is
900 DEG C～1100 DEG C, then carry out the insulation of 4h～5h, prepare aluminium oxide after lowering the temperature with stove multiple
Oxide powder；
Step S3, multiple for aluminium oxide oxide powder and purity are not less than the carbon dust of 99.99% by
It is 1.5～2.5: 1 to mix according to mass ratio, is blended with the multiple oxide of aluminium oxide of carbon dust
Powder carries out normal pressure-sintered making primary aluminium nitride powder in a nitrogen environment, and its sintering temperature is
1400 DEG C～1500 DEG C, sintering time be 5h～6h, nitrogen flow be 0.4m3/h～1.0m3/h；
Step S4, primary aluminium nitride powder is carried out de-carbon operation make aluminium nitride electronic ceramics powder
End, its de-carbon temperature is 600 DEG C～700 DEG C, the de-carbon time is 4h～6h.
Specifically, in step s 2, mixed-powder utilize graphite crucible enter in an inert atmosphere
Row is normal pressure-sintered；In step s 4, utilize alumina crucible for container primary aluminium nitride powder
De-carbon operation is carried out in de-carbon stove；In step s 2, inert environments is helium environment or argon
Compression ring border.
Limit at this: the mean diameter of alumina powder is not more than 1 micron；Metallic aluminium powder average
Particle diameter is not more than 1 micron.
The present invention utilizes alumina powder to use carbothermic method to prepare aluminium nitride electronic ceramic powder,
Aluminium nitride electronic ceramic powder (AlN) crystal structure prepared by the present invention is hexagonal crystal shape, nitridation
The oxygen content of aluminium powder is below 0.9%, and nitrogen content is more than 33%, and granule is uniform, once grain
Son a size of 0.8～1.5um, and ic substrate can be done by flow casting molding.
AIN i.e. aluminium nitride, AlN is atomic crystal, belongs to diamond like carbon nitride, the highest stablizes
To 2200 DEG C.Room temperature strength is high, and intensity declines slower with the rising of temperature.Heat conductivity is good,
Thermal coefficient of expansion is little, is good heat shock resistance material.The ability of resist melt metal attack is strong,
It is founding pure iron, the preferable crucible material of aluminum or aluminum alloy.Aluminium nitride or electrical insulator, be situated between
Electrical property is good, also gets a good chance of as electric elements.
In specific implementation process, its preparation method is as follows:
(1) material mixing
Weigh purity to be not less than the alumina powder of 99.99% and purity and be not less than the metallic aluminium of 99.99%
Powder is mutually mixed uniformly, wherein: alumina powder content is 90～100wt%, metallic aluminium powder content
It is 0～10wt%.
(2) sintering
Gained mixture in above-mentioned steps is loaded crucible, puts into sintering furnace, in inertia or true
Carrying out pressureless sintering under Altitude, wherein sintering temperature is 900～1100 DEG C；Temperature retention time is
4～5h.
(3) nitridation
By the most mixed for carbon dust that gained alumina powder and purity in previous step step are not less than 99.99%
Close uniformly, wherein: alumina powder is 2: 1 with the ratio of carbon dust.The material of mix homogeneously is filled
Enter in crucible, carry out normal pressure-sintered, wherein in a nitrogen environment: sintering temperature is
1400～1500 DEG C；Temperature retention time is 5～6h；Nitrogen flow is 0.4m3/h～1.0m3/h.
In the preparation method of the aluminium nitride electronic ceramic powder of present invention offer, aluminium nitride electronics
Ceramic powders is to utilize alumina powder and metallic aluminium powder to be mutually mixed uniformly in proportion, at a constant temperature
It is sintered under degree being prepared from, the alumina powder obtained after treatment exists many heavy oxygens
Compound, can reduce reaction activity in carbothermic reduction reaction, this technique compared to without
Process alumina powder nitriding temperature that is 1600 DEG C～1700 DEG C be reduced to what the present invention was applied
1400 DEG C～1500 DEG C, temperature retention time is dropped to 5h～6h by original 10h～12h, by changing
Aluminum ions quantivalence, is changed into aluminium ion at a low price by the aluminium ion of high price, has reached to improve
The activity of aluminium oxide, reduction carbon thermal reduction temperature and the purpose of recovery time, due to reduction temperature
Decline, the recovery time reduces, and solves the one-tenth production capacity consumption that in prior art, aluminium nitride exists high
Problem.
Refer to Fig. 2, Fig. 2 is the embodiment of the present invention 1, embodiment 2 and the experiment of comparative example
Detection chart.
Below in conjunction with embodiment, the present invention is described further.
Embodiment 1
Selecting purity is 99.99%, and mean diameter is the alumina powder of 1 micron, and purity is
99.99%, mean diameter be the metallic aluminium powder of 1 micron as raw material, percentage by weight is oxidation
Aluminum: metallic aluminium is 95: 5, puts into batch mixing 15 minutes in V-type batch mixer together.
Mixed powder material is put in high purity graphite crucible；Graphite sintering put into by graphite crucible
In stove, in a nitrogen atmosphere, it is that in-furnace temperature is risen to 1000 DEG C by 10 DEG C/h according to heating rate,
Insulation 4h.
Mixed-powder after processing after cooling is 99.99% with purity, and mean diameter is 1 micron
Carbon dust mixing, the ratio of alumina powder and carbon dust is 2: 1.
The raw material of mixing carbon dust is put in high purity graphite crucible；Graphite sintering put into by graphite crucible
In stove, in a nitrogen atmosphere, it is that in-furnace temperature is risen to 1450 DEG C by 10 DEG C/h according to heating rate,
Insulation 6h.
Putting in high purity aluminium oxide crucible by the powder after nitridation, alumina crucible puts into de-carbon stove
In, it is that in-furnace temperature is risen to 650 DEG C by 2 DEG C/h according to heating rate, is incubated 4h.
After furnace temperature cools down, take out aluminium nitride powder.
Embodiment 2
Selecting purity is 99.99%, and mean diameter is the alumina powder of 1 micron, and purity is
99.99%, mean diameter be the metallic aluminium powder of 1 micron as raw material, percentage by weight is oxidation
Aluminum: metallic aluminium=90: 10, puts into batch mixing 15 minutes in V-type batch mixer together.
Mixed powder material is put in high purity graphite crucible；Graphite sintering put into by graphite crucible
In stove, in a nitrogen atmosphere, it is that in-furnace temperature is risen to 1000 DEG C by 10 DEG C/h according to heating rate,
Insulation 4h.
Mixed-powder after processing after cooling is 99.99% with purity, and mean diameter is 1 micron
Carbon dust mixing, the ratio of alumina powder and carbon dust is 2: 1.
The raw material of mixing carbon dust is put in high purity graphite crucible；Graphite sintering put into by graphite crucible
In stove, in a nitrogen atmosphere, it is that in-furnace temperature is risen to 1450 DEG C by 10 DEG C/h according to heating rate,
Insulation 6h.
Putting in high purity aluminium oxide crucible by the powder after nitridation, alumina crucible puts into de-carbon stove
In, it is that in-furnace temperature is risen to 650 DEG C by 2 DEG C/h according to heating rate, is incubated 4h.
After furnace temperature cools down, take out aluminium nitride powder.
Comparative example
Selecting purity is 99.99%, and mean diameter is the alumina powder of 1 micron, and purity is
99.99%, mean diameter be the carbon dust of 1 micron as raw material, percentage by weight is aluminium oxide:
Carbon dust=2: 1, put into batch mixing 15 minutes in V-type batch mixer together.
The raw material of mixing carbon dust is put in high purity graphite crucible；Graphite sintering put into by graphite crucible
In stove, in a nitrogen atmosphere, it is that in-furnace temperature is risen to 1600 DEG C by 10 DEG C/h according to heating rate,
Insulation 10h.
Putting in high purity aluminium oxide crucible by the powder after nitridation, alumina crucible puts into de-carbon stove
In, it is that in-furnace temperature is risen to 650 DEG C by 2 DEG C/h according to heating rate, is incubated 4h.
After furnace temperature cools down, take out aluminium nitride powder.
Embodiments of the invention are given for the sake of example and description, and are not nothing left
Leakage or limit the invention to disclosed form.Many modifications and variations are for this area
It is apparent from for those of ordinary skill.Selecting and describing embodiment is to more preferably illustrate
The principle of the present invention and actual application, and make those of ordinary skill in the art it will be appreciated that this
Invent thus design the various embodiments with various amendments being suitable to special-purpose.
Claims (4)
1. the preparation method of an aluminium nitride electronic ceramic powder, it is characterised in that
Step one, purity is not less than the alumina powder of 99.99% it is not less than 99.99% with purity
Metallic aluminium powder is mutually mixed uniformly makes mixed-powder, and wherein, alumina powder content is
90～100wt%, metallic aluminium powder content is 0～10wt%；
Step 2, being carried out by described mixed-powder normal pressure-sintered in an inert atmosphere, it sinters temperature
Degree is 900 DEG C～1100 DEG C, then carries out the insulation of 4h～5h, prepares aluminium oxide with stove many after lowering the temperature
Heavy oxygen compound powder；
Step 3, multiple for described aluminium oxide oxide powder and purity are not less than 99.99% carbon
Powder is 1.5～2.5: 1 to mix according to mass ratio, and the described aluminium oxide being blended with carbon dust is many
Heavy oxygen compound powder carries out normal pressure-sintered making primary aluminium nitride powder in a nitrogen environment, and it burns
Junction temperature is 1400 DEG C～1500 DEG C, sintering time is 5h～6h, nitrogen flow is
0.4m3/h～1.0m3/h；
Step 4, described primary aluminium nitride powder is carried out de-carbon operation make aluminium nitride electronics pottery
Porcelain powder, its de-carbon temperature is 600 DEG C～700 DEG C, the de-carbon time is 4h～6h.
The preparation method of aluminium nitride electronic ceramic powder the most according to claim 1, it is special
Levy and be,
In described step 2, mixed-powder utilize graphite crucible carry out often in an inert atmosphere
Pressure sintering；
In described step 4, utilize alumina crucible for container described primary aluminium nitride powder
De-carbon operation is carried out in de-carbon stove.
The preparation method of aluminium nitride electronic ceramic powder the most according to claim 2, it is special
Levy and be,
In described step 2, described inert environments is helium environment or ar gas environment.
4. according to the preparation side of the aluminium nitride electronic ceramic powder described in any one of claims 1 to 3
Method, it is characterised in that
The mean diameter of described alumina powder is not more than 1 micron；
The mean diameter of described metallic aluminium powder is not more than 1 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610156386.4A CN105836717B (en) | 2016-03-17 | 2016-03-17 | The preparation method of aluminium nitride electronic ceramic powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610156386.4A CN105836717B (en) | 2016-03-17 | 2016-03-17 | The preparation method of aluminium nitride electronic ceramic powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105836717A true CN105836717A (en) | 2016-08-10 |
| CN105836717B CN105836717B (en) | 2018-03-16 |
Family
ID=56588057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610156386.4A Active CN105836717B (en) | 2016-03-17 | 2016-03-17 | The preparation method of aluminium nitride electronic ceramic powder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105836717B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109650897A (en) * | 2019-02-20 | 2019-04-19 | 广东省新材料研究所 | A kind of APS plasma prepares the method and aluminium nitride powder and application of aluminium nitride powder |
| CN109763202A (en) * | 2019-01-03 | 2019-05-17 | 昆明理工大学 | A kind of preparation method of aluminium nitride fibres |
| CN110203893A (en) * | 2019-06-17 | 2019-09-06 | 邱瑞光 | Aluminum metal directly makes the manufacturing method of ball-type aluminium nitride |
| CN110577198A (en) * | 2018-06-11 | 2019-12-17 | 河北高富氮化硅材料有限公司 | Method for removing crushed small particles in aluminum nitride powder |
| CN110577403A (en) * | 2018-06-07 | 2019-12-17 | 有研稀土新材料股份有限公司 | high-purity aluminum nitride powder and preparation method thereof |
| CN110577199A (en) * | 2018-06-07 | 2019-12-17 | 有研稀土新材料股份有限公司 | Method for removing carbon from nitride powder |
| CN111663185A (en) * | 2020-06-22 | 2020-09-15 | 哈尔滨化兴软控科技有限公司 | Device and method for preparing powder for PVT method aluminum nitride single crystal growth |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101830448A (en) * | 2010-05-07 | 2010-09-15 | 上海理工大学 | Method for preparing nano aluminum nitride powder at low temperature |
-
2016
- 2016-03-17 CN CN201610156386.4A patent/CN105836717B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101830448A (en) * | 2010-05-07 | 2010-09-15 | 上海理工大学 | Method for preparing nano aluminum nitride powder at low temperature |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110577403A (en) * | 2018-06-07 | 2019-12-17 | 有研稀土新材料股份有限公司 | high-purity aluminum nitride powder and preparation method thereof |
| CN110577199A (en) * | 2018-06-07 | 2019-12-17 | 有研稀土新材料股份有限公司 | Method for removing carbon from nitride powder |
| CN110577198A (en) * | 2018-06-11 | 2019-12-17 | 河北高富氮化硅材料有限公司 | Method for removing crushed small particles in aluminum nitride powder |
| CN109763202A (en) * | 2019-01-03 | 2019-05-17 | 昆明理工大学 | A kind of preparation method of aluminium nitride fibres |
| CN109763202B (en) * | 2019-01-03 | 2021-10-12 | 昆明理工大学 | Preparation method of aluminum nitride fiber |
| CN109650897A (en) * | 2019-02-20 | 2019-04-19 | 广东省新材料研究所 | A kind of APS plasma prepares the method and aluminium nitride powder and application of aluminium nitride powder |
| CN110203893A (en) * | 2019-06-17 | 2019-09-06 | 邱瑞光 | Aluminum metal directly makes the manufacturing method of ball-type aluminium nitride |
| CN110203893B (en) * | 2019-06-17 | 2021-04-27 | 邱瑞光 | Method for directly manufacturing spherical aluminum nitride from aluminum metal |
| CN111663185A (en) * | 2020-06-22 | 2020-09-15 | 哈尔滨化兴软控科技有限公司 | Device and method for preparing powder for PVT method aluminum nitride single crystal growth |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105836717B (en) | 2018-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105836717A (en) | Preparation method of aluminum nitride electronic ceramic powder | |
| CN109136615B (en) | Preparation method of high-strength high-plasticity dispersion-strengthened copper-based composite material | |
| CN100432016C (en) | Method of manufacturing aluminium nitride/boron nitride multiple phase ceramic | |
| KR20170061755A (en) | Alumina complex ceramics composition and manufacturing method thereof | |
| CN113943159B (en) | Preparation method of boron carbide composite ceramic | |
| CN111996408B (en) | Preparation method of oxide ceramic particle reinforced Cu-based composite material | |
| CN108129153A (en) | A kind of multicomponent rare earth boride（LaxSr1-x）B6Polycrystalline cathode material and preparation method thereof | |
| CN113480315A (en) | High-entropy low-boride ceramic and preparation method thereof | |
| CN112028636A (en) | Preparation method of high-thermal-conductivity aluminum nitride/graphene composite ceramic device | |
| CN107841669B (en) | High-thermal-conductivity active composite packaging material and preparation method thereof | |
| CN108198934B (en) | Composite thermoelectric material and preparation method thereof | |
| CN113354418A (en) | High-performance aluminum nitride ceramic substrate prepared by vacuum hot-pressing sintering method and preparation method | |
| CN108863395B (en) | High-thermal-conductivity and high-strength silicon nitride ceramic material and preparation method thereof | |
| CN111211215B (en) | Nano composite thermoelectric material and preparation method thereof | |
| JPS5832072A (en) | Aluminum nitride sintered body and manufacture | |
| CN102433456B (en) | Powder metallurgy preparation method for electronic encapsulation material with high thermal conductivity | |
| CN110734290A (en) | silicon nitride ceramic materials and preparation method thereof | |
| CN110699566B (en) | CaMn7O12Reinforced low-expansion high-thermal-conductivity copper-based composite material and preparation method thereof | |
| CN109650862B (en) | High-temperature-resistant boron nitride-strontium feldspar ceramic matrix composite material and preparation method thereof | |
| JP3403500B2 (en) | Method for producing aluminum nitride powder and aluminum nitride sintered body | |
| JP4014561B2 (en) | Aluminum nitride powder, production method and use thereof | |
| CN109336609A (en) | One kind is highly thermally conductive, be electrically insulated liquid phase sintering silicon carbide ceramic and its SPS preparation process | |
| JP5033948B2 (en) | Method for producing aluminum nitride powder and method for producing aluminum nitride sintered body | |
| JPH01252584A (en) | Sintered composite ceramic compact and production thereof | |
| CN108017393A (en) | A kind of normal pressure-sintered hexagonal boron nitride ceramic preparation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |