CN105826676B - The active high wave transparent metamaterial structure of one kind and antenna house - Google Patents
The active high wave transparent metamaterial structure of one kind and antenna house Download PDFInfo
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- CN105826676B CN105826676B CN201610200826.1A CN201610200826A CN105826676B CN 105826676 B CN105826676 B CN 105826676B CN 201610200826 A CN201610200826 A CN 201610200826A CN 105826676 B CN105826676 B CN 105826676B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
A kind of active high wave transparent metamaterial structure is disclosed, including：First frequency selection superficial layer, dielectric-slab, the second frequency selection superficial layer stacked gradually；First frequency selects superficial layer to offer the grounding plate in N number of gap；It includes N number of amplification radiating element that second frequency, which selects superficial layer, each to amplify radiating element again including a metal patch, a transistor amplifier；In each amplification radiating element, the input terminal of transistor amplifier is connected via the through-hole on dielectric-slab with grounding plate, and the output end of transistor amplifier is connected with the metal patch.The active high wave transparent metamaterial structure of the present invention can be reduced effectively with interior Insertion Loss, be improved with interior wave transmission rate, while be realized stealthy with outer multiband.The invention also discloses a kind of antenna houses, can realize whole advantageous effects of the active high wave transparent metamaterial structure.
Description
Technical field
The present invention relates to radome design fields, more particularly to a kind of active high wave transparent metamaterial structure and antenna
Cover.
Background technology
In recent years, FSS (frequency-selective surfaces) antenna house, as a kind of more emerging antenna house working mechanism, by
The extensive concern of researcher.Compared with traditional antenna house, frequency-selective surfaces antenna house can not only improve radar work
Wave transmission rate in frequency band ensures radar normal work, and can reduce the reflectivity of the electromagnetic wave outside working band, obtains good
Stealth effect.
It is formed currently, common frequency-selective surfaces antenna house mostly uses greatly passive FSS structures material preparation.It is passive
The periodic structure that FSS is made of a large amount of passive resonance units can generally pass through the gap of fabrication cycle on a metal plate
Or periodic metal patch is arranged on dielectric-slab to realize.Since the electric property of passive FSS can not change, no
The variation that can rapidly adapt to external electromagnetic environment thereby reduces the application flexibility of passive FSS antenna houses.In addition, common
Frequency selection antenna house there is problems：First, the Insertion Loss in passband is difficult to decrease；Second is that being difficult to realize outside passband simultaneously
The stealthy function of multiband；Third, there are a degree of mutual shadows with the low scattering properties outside passband for the wave transparent characteristic in passband
It rings.
For the defect of the antenna house of passive FSS, can effectively be reduced with interior Insertion Loss, raising band there is an urgent need for a kind of in the prior art
Interior wave transmission rate, while can realize again and prepare material and new antenna cover with the stealthy new antenna cover of outer multiband.
Invention content
It is an object of the invention to propose the active high wave transparent metamaterial structure of one kind and antenna house, effectively to reduce band interpolation
Damage is improved with interior wave transmission rate, while being realized stealthy with outer multiband.
The present invention provides a kind of active high wave transparent metamaterial structures, including：The first frequency selection surface stacked gradually
Layer, dielectric-slab, second frequency select superficial layer；
First frequency selects surface level in dielectric-slab front, specially offers the grounding plate in N number of gap；
Second frequency selection superficial layer is printed on the medium back comprising N number of amplification radiating element each amplifies radiating element
Include a metal patch, a transistor amplifier again；In each amplification radiating element, the transistor amplifier
Input terminal be connected with grounding plate via the through-hole on dielectric-slab, the output end of the transistor amplifier and the gold
Belong to patch to be connected；Wherein, N is the integer more than or equal to 1.
Preferably, the thickness d in the gap meets：
0<d≤1μm。
Preferably, the thickness of the metal patch is identical as the thickness in the gap.
Preferably, the gap is Q-RING gap, and the metal patch is square patch.
Preferably, the brachium in the Q-RING gap is 2mm, also, the slit width in the Q-RING gap is 0.1mm.
Preferably, N=4, also, the square array distribution in Q-RING gap.
Preferably, the square patch is identical as the distribution mode in Q-RING gap.
Preferably, the thickness of the dielectric-slab is 7.5mm, and the permittivity ε of the dielectric-slab meets 1≤ε≤1.5.
Preferably, the transistor amplifier includes transistor, build-out resistor and the transistor is made to be in amplification
The external bias circuit of state.
The present invention also provides a kind of antenna house, the antenna house is made of the active high wave transparent metamaterial structure.
The present invention active high wave transparent metamaterial structure include mainly：The first frequency stacked gradually selects superficial layer, is situated between
Scutum, second frequency select superficial layer.Wherein, first frequency selected superficial layer to open up apertured grounding plate, both
It can play the role of bandpass filtering, and expelling plate can be played.It includes metal patch, triode that second frequency, which selects superficial layer,
Amplifying circuit, and the input terminal of transistor amplifier is connected with grounding plate, and output end is connected with metal patch.Its
In, metal patch primarily serves the effect of radiated electromagnetic wave, and transistor amplifier, which primarily serves, to be further increased in passband
The effect of wave transmission rate.The active high wave transparent metamaterial structure of the present invention can be reduced effectively with interior Insertion Loss, be improved with interior wave transmission rate,
It realizes simultaneously stealthy with outer multiband.
Description of the drawings
The specific embodiment part provided by referring to the drawings, the features and advantages of the present invention will become more
It is readily appreciated that, in the accompanying drawings：
Fig. 1 is the schematic diagram of the active high wave transparent metamaterial structure of the embodiment of the present invention；
Fig. 2 is the equivalent circuit diagram of the active high wave transparent metamaterial structure of the embodiment of the present invention；
Fig. 3 is the electric-field intensity distribution figure of bilayer FSS structures in the embodiment of the present invention；
Fig. 4 is the transmission coefficient of bilayer FSS structures and reflection coefficient chart in the embodiment of the present invention；
1, first frequency selects superficial layer；2, dielectric-slab；3, second frequency selects superficial layer；4, through-hole；101, gap；
201, metal patch；202, transistor amplifier circuit.
Specific implementation mode
Exemplary embodiments of the present invention are described in detail with reference to the accompanying drawings.Illustrative embodiments are retouched
It states merely for the sake of demonstration purpose, and is definitely not to the present invention and its application or the limitation of usage.
In the prior art, FSS antenna houses have the following problems：First, being difficult to decrease with interior Insertion Loss；Second is that being difficult to simultaneously
It realizes stealthy with outer multiband；Third, being blocked by array, the band caused by non-ideal structure such as irregular contour, geometric parameter drift
Interior transmissison characteristic influences each other with outer scattering properties.
In view of the drawbacks of the prior art, present inventor proposes the active high wave transparent metamaterial structure of one kind and antenna
Cover can be reduced effectively with interior Insertion Loss, be improved with interior wave transmission rate, while can realize with outer multiband stealth effect.The height of the present invention
The main design thought of wave transparent metamaterial structure is：Electromagnetic wave is first received and selected, then the electric signal received is introduced and is amplified
Circuit is amplified, and finally by amplified electric signal radiant output, forms transmitted electromagnetic field.
The technical solution of the embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.In Fig. 1, from top to bottom successively
For sectional view, vertical view, the upward view of active high wave transparent metamaterial structure.It can be seen from figure 1 that active high wave transparent metamaterial structure packet
It includes：First frequency selection superficial layer 1, dielectric-slab 2, the second frequency selection superficial layer 3 stacked gradually.
First frequency selection superficial layer 1 is located at 2 front of dielectric-slab, specially offers the grounded metal in N number of gap 101
Plate.Wherein, N is the integer for being equal to 1 more than 1.In the specific implementation, the grounding plate can be by the conductive metals material such as copper, silver
Material is made, and N number of gap 101 can lead to overetched mode and be made.Alternatively, N number of gap 101 can also pass through plating, carve, light
The modes such as quarter, electronics carve, ion is carved are made.On first frequency selection superficial layer 1, N number of gap 101 is equal in the form of an array
Even distribution.For example, N number of gap 101 can the distribution of square or triangular array.The thickness d in gap 101 is thin as possible, excellent
Selected value ranging from 0<d≤1μm.In the specific implementation, the shape, size, number in gap 101, thickness can be according to actual designs
Demand is determined.For example, the size and number in gap are corresponding with required resonance wavelength.
In the embodiment of the present invention, first frequency selection surface 1 can realize wave transparent function and realization in special frequency channel
Emit the function of electromagnetic field.Therefore, to a certain extent, first frequency selection surface 1 had not only been equivalent to a bandpass filter, but also
It is equivalent to an electromagnetic radiation plate.
Dielectric-slab 2 can be made of dielectric materials such as foam or plastics.In the specific implementation, the thickness of dielectric-slab 2, dielectric are normal
The parameters such as number can be determined according to the centre frequency of required wave transparent frequency range, width, concrete shape.Preferably, the dielectric of dielectric-slab 2
Satisfaction 1≤ε≤1.5 of constant ε.
Second frequency selection superficial layer 3 is printed on 2 back side of dielectric-slab comprising N number of amplification radiating element.It is described N number of to put
Large radiation unit is evenly arranged in the back side of dielectric-slab 2 in the form of an array, for example it can square or rounded projections arranged.Often
A amplification radiating element includes 201, transistor amplifiers 202 of a metal patch again.In each amplification radiating element
In, the input terminal of transistor amplifier 202 is connected via the through-hole 4 on dielectric-slab with grounding plate, triode amplification electricity
The output end on road 202 is connected with metal patch 201.In the specific implementation, the shape, size, number of metal patch 201, thickness
It can be determined according to actual design demand.Preferably, the shape of metal patch 201, number, thickness, distribution mode and gap
101 are consistent.For example, when gap is Q-RING gap, metal patch preferentially chooses square patch.Transistor amplifier
202 mainly by transistor, build-out resistor and make the transistor be in the external bias circuit of magnifying state.In design three
When pole pipe amplifying circuit, the resistance value for considering internal resistance, the output loading of signal source is needed, to determine the resistance value of build-out resistor, and
The working frequency of transistor should cover required wave transparent band connection frequency.In the embodiment of the present invention, by adding in medium back
Transistor amplifier is carried, the electric signal after capable of selecting frequency is amplified, and then improves the wave transmission rate of band logical frequency range；By being situated between
Scutum back side metal-loaded patch can form transmitted electromagnetic field by amplified signal to external radiation.
Fig. 2 gives the equivalent circuit diagram of the active high wave transparent Meta Materials of the embodiment of the present invention.As it is clear from fig. 2 that the first frequency
Rate select superficial layer can the equivalent parallel connection at capacitance X1, inductance B1, second frequency select superficial layer can be equivalent at capacitance X2, capacitance
The series connection of B2, transistor amplifier can the equivalent other parts in circuit.
The embodiment of the present invention additionally provides a kind of antenna house, and the antenna house is by the active high wave transparent metamaterial structure system
At.
A kind of specific high wave transparent metamaterial structure designed with reference to the embodiment of the present invention, to the embodiment of the present invention
Technique effect be described in detail.
In the design process of the specific high wave transparent metamaterial structure, we determine the phase of the double-deck FSS structures first
Related parameter.The double-deck FSS structures, i.e., the structure being mainly made of first frequency selection surface, dielectric-slab, metal patch.Wherein,
The Q-RING gap of 4 square array distributions is shared on one frequency-selective surfaces layer, the brachium in the Q-RING gap is
2mm, gap width 0.1mm.The amplification radiating element of 4 square array distributions, Mei Gefang are shared in medium back
Large radiation unit includes a square metal patch, a high frequency transistor circuit.The thickness of dielectric-slab is 7.5mm, and dielectric is normal
Number is 1.2.In the design process, we have carried out CST emulation to bilayer FSS structures.Fig. 3 gives the double-deck FSS structures and exists
Electric-field intensity distribution figure under horizontal polarization.It can be seen from figure 3 that the gap space on first frequency selection surface forms similar capacitance
The field distribution of device, therefore can be used as the voltage source of internal resistance infinity.Fig. 4 gives the transmission of the double-deck FSS structures
Coefficient, reflection coefficient chart.Wherein, the S1 curves in Fig. 4 are transmission coefficient curve, and S2 curves are reflection coefficient curve.From
Fig. 4 is as it can be seen that 8.5GHz~11.5GHz is wave transparent frequency range, and significant resistance is presented in 2-8GHz frequency ranges and 12-18GHz frequency ranges
Band characteristic.In addition, due in specific implementation process, metal patch cannot be perfectly aligned with gap, therefore is 10GHz in frequency
Position near, transmission coefficient occur about 1dB recess.
Next, we design the amplifying circuit for being loaded with transistor.From the point of view of making using angle, will have
The difficulty of processing of source device arrangements in the plane is smaller.Therefore, transistor amplifier circuit is placed in the back side of dielectric-slab by we.And
And we have selected high frequency HEMT tandem circuits as transistor amplifier circuit, and devise needed for normal operation
Bias circuit.Finally, by parameter optimization, the wave transparent frequency range for the specific active high wave transparent metamaterial structure that we obtain
Centre frequency is about 10GHz, and the bandwidth of wave transparent frequency range is about 2GHz, and the wave transmission rate in passband is about 2dB, and bilayer FSS structures
Wave transmission rate in passband itself is in -2dB or so.As it can be seen that after load transistor amplifying circuit, the active high wave transparent Meta Materials knot
Wave transmission rate of the structure in passband is significantly improved.
Although with reference to illustrative embodiments, invention has been described, but it is to be understood that the present invention does not limit to
The specific implementation mode that Yu Wenzhong is described in detail and shows, without departing from claims limited range, this
Field technology personnel can make various changes to the illustrative embodiments.
Claims (10)
1. a kind of active high wave transparent metamaterial structure, which is characterized in that the structure includes the first frequency selection stacked gradually
Superficial layer, dielectric-slab, second frequency select superficial layer；
First frequency selects surface level in dielectric-slab front, specially offers the grounding plate in N number of gap；Second
Frequency-selective surfaces layer is printed on the medium back comprising N number of amplification radiating element, each radiating element that amplifies wrap again
Include a metal patch, a transistor amplifier；In each amplification radiating element, the transistor amplifier it is defeated
Enter end via the through-hole on dielectric-slab to be connected with grounding plate, the output end of the transistor amplifier is pasted with the metal
Piece is connected；
Wherein, N is the integer more than or equal to 1.
2. structure as described in claim 1, which is characterized in that the thickness d in the gap meets：
0 d≤1 μm ＜.
3. structure as claimed in claim 2, which is characterized in that the thickness phase of the thickness of the metal patch and the gap
Together.
4. structure as claimed in claim 3, which is characterized in that the gap is Q-RING gap, and the metal patch is side
Shape patch.
5. structure as claimed in claim 4, which is characterized in that the brachium in the Q-RING gap is 2mm, also, the side
The slit width of shape circumferential weld gap is 0.1mm.
6. structure as claimed in claim 5, which is characterized in that N=4, also, the square array in Q-RING gap point
Cloth.
7. structure as claimed in claim 6, which is characterized in that the distribution mode of the square patch and the Q-RING gap
It is identical.
8. the structure as described in claim 1-7 is any, which is characterized in that the thickness of the dielectric-slab is 7.5mm, the medium
The permittivity ε of plate meets 1≤ε≤1.5.
9. structure as claimed in claim 8, which is characterized in that the transistor amplifier include transistor, build-out resistor,
And the transistor is made to be in the external bias circuit of magnifying state.
10. a kind of antenna house, which is characterized in that the antenna house is by any active high super materials of wave transparent of claim 1-9
Material structure is made.
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| CN108847530B (en) * | 2018-06-22 | 2020-08-25 | 西安电子科技大学 | Triangular pyramid super-surface antenna housing with wave beam calibration function |
| CN111697333A (en) * | 2020-06-01 | 2020-09-22 | 东风汽车集团有限公司 | Metamaterial antenna housing |
| CN111799565A (en) * | 2020-07-30 | 2020-10-20 | 武汉灵动时代智能技术股份有限公司 | Metamaterial structure capable of greatly improving wave transmittance of glass |
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| US20030142036A1 (en) * | 2001-02-08 | 2003-07-31 | Wilhelm Michael John | Multiband or broadband frequency selective surface |
| US7173565B2 (en) * | 2004-07-30 | 2007-02-06 | Hrl Laboratories, Llc | Tunable frequency selective surface |
| CN104064839B (en) * | 2014-07-02 | 2016-07-06 | 中国科学院长春光学精密机械与物理研究所 | Frequency-selective surfaces in active radar and passive radar combined guidance system |
| CN105244570B (en) * | 2015-08-26 | 2018-03-13 | 中国科学院长春光学精密机械与物理研究所 | Active frequencies select the design method on surface |
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