CN105810702A - 彩色滤光器阵列上的光学隔离栅格 - Google Patents
彩色滤光器阵列上的光学隔离栅格 Download PDFInfo
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- CN105810702A CN105810702A CN201610029171.6A CN201610029171A CN105810702A CN 105810702 A CN105810702 A CN 105810702A CN 201610029171 A CN201610029171 A CN 201610029171A CN 105810702 A CN105810702 A CN 105810702A
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- grid
- optically isolated
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- 238000002955 isolation Methods 0.000 title abstract description 9
- 230000003287 optical effect Effects 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims description 37
- 238000005286 illumination Methods 0.000 claims description 32
- 238000003384 imaging method Methods 0.000 claims description 23
- 238000005516 engineering process Methods 0.000 description 5
- 238000004040 coloring Methods 0.000 description 2
- 208000024754 bloodshot eye Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 201000005111 ocular hyperemia Diseases 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/601,016 US9276029B1 (en) | 2015-01-20 | 2015-01-20 | Optical isolation grid over color filter array |
US14/601,016 | 2015-01-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105810702A true CN105810702A (zh) | 2016-07-27 |
Family
ID=55360061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610029171.6A Pending CN105810702A (zh) | 2015-01-20 | 2016-01-18 | 彩色滤光器阵列上的光学隔离栅格 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9276029B1 (zh) |
CN (1) | CN105810702A (zh) |
TW (1) | TWI567963B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808887A (zh) * | 2016-09-06 | 2018-03-16 | 日月光半导体制造股份有限公司 | 光学装置及其制造方法 |
CN109786407A (zh) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | 半导体图像传感器及其形成方法 |
CN111199167A (zh) * | 2018-11-16 | 2020-05-26 | 世界先进积体电路股份有限公司 | 光学感测结构及其形成方法 |
US11843013B2 (en) | 2017-11-15 | 2023-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polarizers for image sensor devices |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102664446B1 (ko) | 2019-08-28 | 2024-05-09 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
KR102704191B1 (ko) | 2019-10-23 | 2024-09-05 | 삼성전자주식회사 | 이미지 센서 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060086957A1 (en) * | 2004-10-27 | 2006-04-27 | Samsung Electronics Co.; Ltd | CMOS image sensor using reflection grating and method for manufacturing the same |
CN101008733A (zh) * | 2007-01-18 | 2007-08-01 | 友达光电股份有限公司 | 彩色滤光片及其制作方法 |
CN102130138A (zh) * | 2010-01-12 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 图像传感器及其形成方法 |
CN102347343A (zh) * | 2010-07-26 | 2012-02-08 | 美商豪威科技股份有限公司 | 具有介于彩色滤光器之间的暗侧壁以减少光串扰的图像传感器 |
US20130027577A1 (en) * | 2011-07-27 | 2013-01-31 | Hoelscher Richard | Imaging systems with color filter barriers |
CN103296042A (zh) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7303931B2 (en) * | 2005-02-10 | 2007-12-04 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
US20110031381A1 (en) * | 2007-12-28 | 2011-02-10 | Hiok-Nam Tay | Light guide array for an image sensor |
US8269264B2 (en) | 2009-11-09 | 2012-09-18 | Omnivision Technologies, Inc. | Image sensor having waveguides formed in color filters |
-
2015
- 2015-01-20 US US14/601,016 patent/US9276029B1/en active Active
-
2016
- 2016-01-18 CN CN201610029171.6A patent/CN105810702A/zh active Pending
- 2016-01-19 TW TW105101576A patent/TWI567963B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060086957A1 (en) * | 2004-10-27 | 2006-04-27 | Samsung Electronics Co.; Ltd | CMOS image sensor using reflection grating and method for manufacturing the same |
CN101008733A (zh) * | 2007-01-18 | 2007-08-01 | 友达光电股份有限公司 | 彩色滤光片及其制作方法 |
CN102130138A (zh) * | 2010-01-12 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 图像传感器及其形成方法 |
CN102347343A (zh) * | 2010-07-26 | 2012-02-08 | 美商豪威科技股份有限公司 | 具有介于彩色滤光器之间的暗侧壁以减少光串扰的图像传感器 |
US20130027577A1 (en) * | 2011-07-27 | 2013-01-31 | Hoelscher Richard | Imaging systems with color filter barriers |
CN103296042A (zh) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808887A (zh) * | 2016-09-06 | 2018-03-16 | 日月光半导体制造股份有限公司 | 光学装置及其制造方法 |
CN107808887B (zh) * | 2016-09-06 | 2022-01-11 | 日月光半导体制造股份有限公司 | 光学装置及其制造方法 |
CN109786407A (zh) * | 2017-11-15 | 2019-05-21 | 台湾积体电路制造股份有限公司 | 半导体图像传感器及其形成方法 |
US11843013B2 (en) | 2017-11-15 | 2023-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Polarizers for image sensor devices |
CN111199167A (zh) * | 2018-11-16 | 2020-05-26 | 世界先进积体电路股份有限公司 | 光学感测结构及其形成方法 |
CN111199167B (zh) * | 2018-11-16 | 2023-06-20 | 世界先进积体电路股份有限公司 | 光学感测结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US9276029B1 (en) | 2016-03-01 |
TWI567963B (zh) | 2017-01-21 |
TW201633521A (zh) | 2016-09-16 |
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