CN105810320A - Nano wire and cable sheath structure - Google Patents
Nano wire and cable sheath structure Download PDFInfo
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- CN105810320A CN105810320A CN201410825284.8A CN201410825284A CN105810320A CN 105810320 A CN105810320 A CN 105810320A CN 201410825284 A CN201410825284 A CN 201410825284A CN 105810320 A CN105810320 A CN 105810320A
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Abstract
The present invention discloses a nano wire and cable sheath structure which comprises a power wire core conductor, a power wire core conductor insulation layer, a power wire core semiconducting layer, a ground wire core conductor, a ground wire core semiconducting layer, a semiconducting filler, and a sheath. The sheath is arranged at the outermost layer of a whole body. The semiconducting filler is arranged in the gap formed by the power wire core semiconducting layer and the ground wire core semiconducting layer. The ground wire core conductor is arranged at one end of the semiconducting filler. The ground wire core semiconducting layer is arranged at the outer side of the ground core conductor, and a ground wire is formed by the ground wire core semiconducting layer and the ground wire core conductor. The power wire core conductor is arranged at one side of the semiconducting filler. The power wire core conductor insulation layer is arranged at the outer surface of the power wire core conductor. The power wire core semiconducting layer is arranged at the outer surface of the power wire core conductor insulation layer. The physical and mechanical performance of a mixed material can be improved by the nano wire and cable sheath structure, the production cost of a nano wire and cable sheath is reduced, and the performance requirement of the wire and cable sheath is satisfied.
Description
Technical field
The present invention relates to a kind of cable cover(ing) structure, specifically a kind of nanowires cable cover(ing) structure, belongs to fields of nano material application.
Background technology
nullNano material refers to that the size of its construction unit is between 1 nanometer to 100 nanometer range，Owing to its size is already close to the coherence length of electronics，Great changes will take place because the strong relevant self-organizing brought makes character for its character，And，Its yardstick is close to the wavelength of light，Plus it, there is the special effects on big surface，Therefore its characteristic showed，Such as fusing point、Magnetic、Optics、Heat conduction、Conductive characteristic etc.，Often it is different from the character that this material shows when integrality，Applications to nanostructures is very important，Nano-calcium carbonate is one of inorganic nano material of developing the earliest，It is as a kind of high quality filler and Chinese white，It is widely used in plastics、Rubber、Papermaking、Coating、Ink、Many fields such as medicine，The tensile strength of electric wire and cable jacket in general sense is poor、Tearing toughness and hardness are low、Stress at definite elongation is minimum，Therefore，We provide a kind of nanowires cable cover(ing) structure.
Summary of the invention
For above-mentioned prior art Problems existing, the present invention provides a kind of nanowires cable cover(ing) structure, it is possible to improve the physical and mechanical properties of batch mixing, reduces the production cost of electric wire and cable jacket, meets the performance requirement of electric wire and cable jacket, meet demand with this.
For achieving the above object, the technical solution used in the present invention is: a kind of nanowires cable cover(ing) structure, including power wire core conductor, power wire core insulating layer of conductor, power wire core semi-conductive layer, wire core conductor, wire core semi-conductive layer, semiconducting filler and sheath；Described sheath is arranged on the outermost layer of entirety；Described semiconducting filler is arranged on the center of entirety, and between the gap that power wire core semi-conductive layer and wire core semi-conductive layer surround；Told wire core conductor is arranged on the downside of semiconducting filler；Described wire core semi-conductive layer is arranged on the outside of wire core conductor, and forms ground wire with wire core conductor；Described power wire core conductor is arranged on upside and the left and right sides of semiconducting filler；Described power wire core insulating layer of conductor is arranged on the outside of power wire core conductor；Described power wire core semi-conductive layer is arranged on outside power wire core insulating layer of conductor, and is hollow structure with wire core semi-conductive layer.
Further, described sheath adopts nm level CaCO_3 material to replace ordinary calcium carbonate to make protective layer.
Further, described semiconducting filler is filled with nm level CaCO_3 material, and is centrally formed square shape structure with wire core semi-conductive layer and power wire core semi-conductive layer.
Further, described power wire core semi-conductive layer and semiconducting filler are centrally formed triangular structure.
nullThe invention has the beneficial effects as follows: nm level CaCO_3 is possible not only to play and brightens dilatation，Reduce the effect of cost，Also there is strengthening action，For in sheath，Quasiconductor is filled the effect propety of matrix and is waited inorganic filler different with common，With matrix, there is very strong interaction ability，Also different with real nanoparticle，There is no small-size effect and quantum effect，Polymer composites has toughness reinforcing enhanced propertied performance，Increase with nm level CaCO_3 consumption，The hot strength first increases and then decreases of sizing material，The increase of CaCO3 consumption，Tearing strength and hardness are all increase，And tearing strength has exceeded national standard，Hardness is between 60～75，Meet the application standard of electric wire，Visible，Nm level CaCO_3 ensure that the performance of material while reducing cost，Increase along with amount of filler，The viscosity of sizing material is also gradually increased，The stress at definite elongation of sizing material also increases，Nm level CaCO_3 is the high-quality environmental protection filler of a kind of CM rubber，Can effectively improve the physical and mechanical properties of sizing material，And consumption is up to 80 parts more than，Formulation cost is made to be substantially reduced，This kind of nanowires cable cover(ing) structure can improve the physical and mechanical properties of batch mixing，Reduce the production cost of electric wire and cable jacket，Meet the performance requirement of electric wire and cable jacket.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention；
Fig. 2 is integral installation schematic diagram of the present invention；
In figure: 1-power wire core conductor, 2-power wire core insulating layer of conductor, 3-power wire core semi-conductive layer, 4-wire core conductor, 5-wire core semi-conductive layer, 6-semiconducting filler, 7-sheath.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out parent Chu, is fully described by, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
As illustrated in fig. 1 and 2: a kind of nanowires cable cover(ing) structure, including power wire core conductor 1, power wire core insulating layer of conductor 2, power wire core semi-conductive layer 3, wire core conductor 4, wire core semi-conductive layer 5, semiconducting filler 6 and sheath 7；Described sheath 7 is arranged on the outermost layer of entirety；Between the gap that described semiconducting filler 6 is arranged on power wire core semi-conductive layer 3 and wire core semi-conductive layer 5 surrounds；Described wire core conductor 4 is arranged on one end of semiconducting filler 6；Described wire core semi-conductive layer 5 is arranged on the outside of wire core conductor 4 and forms ground wire with wire core conductor 4；Described power wire core conductor 1 is arranged on semiconducting filler 6 side；Described power wire core insulating layer of conductor 2 is arranged on the outer surface of power wire core conductor 1；Described power wire core semi-conductive layer 3 is arranged on power wire core insulating layer of conductor 2 outer surface.
Optimisation technique scheme as the present invention: described sheath 7 adopts nm level CaCO_3 material to replace ordinary calcium carbonate to make protective layer；Described semiconducting filler 6 is filled with nm level CaCO_3 material, and is centrally formed square shape structure with wire core semi-conductive layer 5 and power wire core semi-conductive layer 3；Described power wire core semi-conductive layer 3 is filled out 6 with semiconductive and is centrally formed triangular structure.
The bearing flow process of the present invention: sheath 7 adds nm level CaCO_3 material and is extruded into flake strip through plastic extruder heating plasticizing, namely strip is but wound into the different size plug of wrapping machine clamping without water-cooled after extruding from extrusion die, then depart from plug after cooled water cooling and shaping and be namely shaped to helical form sheath, sheath 7 adds nm level CaCO_3 material can also be passed through namely to enter cooling water-cooled but after sheet extruded by extruder, strip after cooling is wound on the plug of different size then through wrapping machine, then plug pushes vulcanizing tank heat sulfur, tank is gone out after certain time, depart from plug namely to can be made into.
The installation method of the present invention: power wire core conductor 1 and wire core conductor 4 middle part are rotated in semiconducting filler 6 middle part of cable protective sleeve; rotate from the one end of the cable protective sleeve middle part wound; it is positioned at power lug place with cable one end around complete cable protective sleeve to be as the criterion; behind location, cable protective sleeve reversion is unclamped; can arbitrarily move; start to rotate from the middle part wound to the other end; two of cable protective sleeve is all wound around the outside being wound on sebific duct electric wire, installation.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when without departing substantially from the spirit of the present invention or basic feature, it is possible to realize the present invention in other specific forms.Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the invention rather than described above limits, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in the present invention.Any accompanying drawing labelling in claim should be considered as the claim that restriction is involved.
The above; it is only presently preferred embodiments of the present invention; not in order to limit the present invention, every any trickle amendment, equivalent replacement and improvement above example made according to the technical spirit of the present invention, should be included within the protection domain of technical solution of the present invention.
Claims (4)
1. a nanowires cable cover(ing) structure, including power wire core conductor (1), power wire core insulating layer of conductor (2), power wire core semi-conductive layer (3), wire core conductor (4), wire core semi-conductive layer (5), semiconducting filler (6) and sheath (7)；It is characterized in that: described sheath (7) is arranged on the outermost layer of entirety；Between the gap that described semiconducting filler (6) is arranged on power wire core semi-conductive layer (3) and wire core semi-conductive layer (5) surrounds；Described wire core conductor (4) is arranged on one end of semiconducting filler (6)；Described wire core semi-conductive layer (5) is arranged on the outside of wire core conductor (4) and forms ground wire with wire core conductor (4)；Described power wire core conductor (1) is arranged on semiconducting filler (6) side；Described power wire core insulating layer of conductor (2) is arranged on the outer surface of power wire core conductor (1)；Described power wire core semi-conductive layer (3) is arranged on power wire core insulating layer of conductor (2) outer surface.
2. a kind of nanowires cable cover(ing) structure according to claim 1, it is characterised in that: described sheath (7) adopts nm level CaCO_3 material to replace ordinary calcium carbonate to make protective layer.
3. a kind of nanowires cable cover(ing) structure according to claim 1 and 2, it is characterized in that: described semiconducting filler (6) is filled with nm level CaCO_3 material, and is centrally formed square shape structure with wire core semi-conductive layer (5) and power wire core semi-conductive layer (3).
4. a kind of nanowires cable cover(ing) structure according to claim 3, it is characterised in that: described power wire core semi-conductive layer (3) and semiconducting filler (6) are centrally formed triangular structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410825284.8A CN105810320A (en) | 2014-12-27 | 2014-12-27 | Nano wire and cable sheath structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410825284.8A CN105810320A (en) | 2014-12-27 | 2014-12-27 | Nano wire and cable sheath structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105810320A true CN105810320A (en) | 2016-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201410825284.8A Pending CN105810320A (en) | 2014-12-27 | 2014-12-27 | Nano wire and cable sheath structure |
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| CN (1) | CN105810320A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202905273U (en) * | 2012-11-22 | 2013-04-24 | 江苏上上电缆集团有限公司 | Wind power generation power cable with nominal voltage of 35kV |
| CN103102545A (en) * | 2012-11-14 | 2013-05-15 | 安徽金桥电缆有限公司 | Cable sheath insulating material for computer and preparation method thereof |
| CN203536084U (en) * | 2013-11-07 | 2014-04-09 | 天津天缆小猫线缆科技集团有限公司 | Water-resistant aluminum alloy conductor electric cable for voltage of 6kV and voltage lower than 6kV |
| US20140377557A1 (en) * | 2013-06-20 | 2014-12-25 | Hitachi Metals, Ltd. | Fluorine-including elastomer composition, and insulated wire and insulated cable using the same |
| CN104575764A (en) * | 2014-12-25 | 2015-04-29 | 西宁共进新材料科技有限公司 | Nano cable assembly |
| CN204407042U (en) * | 2014-12-25 | 2015-06-17 | 西宁共进新材料科技有限公司 | A kind of novel cable |
-
2014
- 2014-12-27 CN CN201410825284.8A patent/CN105810320A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103102545A (en) * | 2012-11-14 | 2013-05-15 | 安徽金桥电缆有限公司 | Cable sheath insulating material for computer and preparation method thereof |
| CN202905273U (en) * | 2012-11-22 | 2013-04-24 | 江苏上上电缆集团有限公司 | Wind power generation power cable with nominal voltage of 35kV |
| US20140377557A1 (en) * | 2013-06-20 | 2014-12-25 | Hitachi Metals, Ltd. | Fluorine-including elastomer composition, and insulated wire and insulated cable using the same |
| CN203536084U (en) * | 2013-11-07 | 2014-04-09 | 天津天缆小猫线缆科技集团有限公司 | Water-resistant aluminum alloy conductor electric cable for voltage of 6kV and voltage lower than 6kV |
| CN104575764A (en) * | 2014-12-25 | 2015-04-29 | 西宁共进新材料科技有限公司 | Nano cable assembly |
| CN204407042U (en) * | 2014-12-25 | 2015-06-17 | 西宁共进新材料科技有限公司 | A kind of novel cable |
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Application publication date: 20160727 |