CN105803500B - A kind of petal-shaped cuprous oxide and its preparation method and application - Google Patents
A kind of petal-shaped cuprous oxide and its preparation method and application Download PDFInfo
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- CN105803500B CN105803500B CN201610211150.6A CN201610211150A CN105803500B CN 105803500 B CN105803500 B CN 105803500B CN 201610211150 A CN201610211150 A CN 201610211150A CN 105803500 B CN105803500 B CN 105803500B
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- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 title claims abstract description 33
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229940112669 cuprous oxide Drugs 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000446 fuel Substances 0.000 claims abstract description 26
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000001699 photocatalysis Effects 0.000 claims abstract description 19
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 9
- 239000008103 glucose Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 14
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- UMRSVAKGZBVPKD-UHFFFAOYSA-N acetic acid;copper Chemical compound [Cu].CC(O)=O UMRSVAKGZBVPKD-UHFFFAOYSA-N 0.000 claims description 6
- 239000008151 electrolyte solution Substances 0.000 claims description 5
- 235000010265 sodium sulphite Nutrition 0.000 claims description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical group [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- GMMZXKSNKIUKOW-UHFFFAOYSA-N [O-2].[O-2].[Ti+4].C(C)O Chemical compound [O-2].[O-2].[Ti+4].C(C)O GMMZXKSNKIUKOW-UHFFFAOYSA-N 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000011017 operating method Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000003786 synthesis reaction Methods 0.000 abstract description 4
- 238000004500 asepsis Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 239000011941 photocatalyst Substances 0.000 abstract 1
- 230000008859 change Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/208—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using liquid deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of semi-conducting material synthesis, a kind of petal-shaped cuprous oxide and its preparation method and application is disclosed.The cuprous method of reduction deposited oxide is driven with photocatalytic fuel cell the invention provides a kind of, with nano-TiO2Photocatalyst, glucose make fuel, and copper acetate makees copper source, TiO2Modified conducting glass makees anode, and electro-conductive glass makees negative electrode, builds ultraviolet excitation photocatalytic fuel cell, while realize the double conversion of deposition and light and chemical energy to electrical energy of the petal-shaped cuprous oxide on electro-conductive glass.Deposition process provided by the present invention is simple to operate, and cost is cheap, and capacity usage ratio is high, asepsis environment-protecting.
Description
Technical field
The invention belongs to techniques of depositing semiconductor materials, and in particular to a kind of petal-shaped cuprous oxide and preparation method thereof and
Using.
Background technology
The problem of energy shortage and environmental pollution be that following human development faces two are main.Solar energy is due to money
The features such as source is abundant, energy is high, cleanliness without any pollution, enjoys the favor of people, therefore solar energy and semiconductor material turns into recent years
The focus of research.Cuprous oxide is a kind of p-type semiconductor, energy gap 2.1eV, its biggest advantage is that the sun can be absorbed
Excited by visible light in light goes out photoproduction electron-hole pair, has been applied to solar cell material, photocatalytic degradation organic contamination
The field such as thing and antifouling paint.
The cuprous method of deposited oxide mainly has electrochemical deposition method, chemical vapour deposition technique, sputtering method, wet-chemical at present
Method, photochemical syntheses method, sol-gal process etc..Wherein wet chemical method, photochemical syntheses method, sol-gal process generally pass through
Reduced separating obtains cuprous oxide solid, and electrochemical deposition method, chemical vapour deposition technique, sputtering method can realize that cuprous oxide exists
Deposition on conducting base, the cuprous oxide of deposition have the advantages that adhesive force it is strong, it is difficult for drop-off, be evenly distributed, thickness it is controllable,
But these method complex operations are, it is necessary to consume substantial amounts of electric energy or heat energy and special instrument and equipment.For above method
Deficiency, it is desirable to develop the deposition that a kind of easy to operate, controllable, small, asepsis environment-protecting method of power consumption realizes cuprous oxide.
The content of the invention
The shortcomings that in order to overcome prior art and deficiency, primary and foremost purpose of the invention are to provide a kind of petal-shaped oxidation Asia
The preparation method of copper;This method is that the photochemical catalytic oxidation offer electron source that lower glucose is radiated using ultraviolet source realizes copper acetate
Deposition process on conducting base.
It is another object of the present invention to provide the petal-shaped cuprous oxide that above-mentioned preparation method obtains.
The present invention's also resides in the application for providing above-mentioned petal-shaped cuprous oxide.
The purpose of the present invention is achieved through the following technical solutions:
A kind of preparation method of petal-shaped cuprous oxide, including following operating procedure:
(1) one layer of TiO is deposited on ITO by czochralski method2Film, then freeze-day with constant temperature make TiO2/ ITO electrode;
(2) with TiO obtained by step (1)2/ ITO electrode as anode, using conducting base as negative electrode, respectively with electrochemistry
2 electrode contacts connection of work station;Addition sodium sulfite solution makees electrolyte solution in anode pool, addition glucose fires
Material, acetic acid copper solution is added in cathode pool, is built into photocatalytic fuel cell;Then deposit and spent under ultraviolet light
Flap cuprous oxide.
Step (1) the making TiO2/ ITO electrode is particular by the immersion lifting in P25 titanium dioxide ethanol colloidal sols
Make TiO2/ ITO electrode.
Step (1) described freeze-day with constant temperature is dried under the conditions of 35~45 DEG C.
Step (2) described TiO2/ ITO electrode is as light anode.
The concentration of step (2) described sodium sulfite solution is 0.01~1mol/L, and pH value is 11~14.
Concentration of step (2) the described glucose in anode pool electrolyte solution is 0.001~4mol/L.
The concentration of acetic acid copper solution is 0.001~0.4mol/L in step (2) described cathode pool.
Connect between step (2) anode pool and cathode pool with saturation potassium chloride salt bridging.
The petal-shaped cuprous oxide that above-mentioned preparation method is prepared.
Above-mentioned petal-shaped cuprous oxide answering in solar cell preparation, photocatalytic pollutant degradation and hydrogen preparation field
With.
Compared with prior art, the present invention has advantages below and beneficial effect:Deposition process operation provided by the invention
Simply, cost is cheap, and capacity usage ratio is high, asepsis environment-protecting, can be controlled by the pH value of control reaction, time, temperature, solubility
The cuprous pattern of oxygenerating, the cuprous oxide of synthesis have the advantages of high absorption coefficient and high energy conversion efficiency, for analysis
Hydrogen has certain facilitation.
Brief description of the drawings
Fig. 1 be the photocatalytic fuel cell built in the embodiment of the present invention 2 when deposited oxide is cuprous photoelectric current with the time
Change curve.
Fig. 2 is the cuprous oxide that the photocatalytic fuel cell built in the embodiment of the present invention 2 is deposited on electro-conductive glass
SEM (SEM) figure.
Fig. 3 be photocatalytic fuel cell that the embodiment of the present invention 2 is built in the dark (curve 2) under (curve 1) and illumination
Current density with cell voltage change curve.
Fig. 4 be photocatalytic fuel cell that the embodiment of the present invention 2 is built in the dark (curve 2) under (curve 1) and illumination
Power density with cell voltage change curve.
Embodiment
With reference to embodiment, the present invention is described in further detail, but the implementation of the present invention is not limited to this.
According to purpose of design of the present invention, the simple replacement of allied substances and the change of size shape, such as change what the present invention deposited
Time, change electrode outward appearance (being such as changed to square or other shapes), it is simple to change glucose dosage or the pH value of solution etc.
The scope of the present invention all should be belonged to;Test method used in following embodiments is the art unless otherwise specified
Existing conventional method;Used material, reagent etc., unless otherwise specified, be the reagent that commercially obtains and
Material.
The structure of the photocatalytic fuel cell of embodiment 1
The TiO of the present embodiment2/ ITO electrode, it is prepared by the following method to obtain:
(1) 30mg P25 titanium dioxide ultrasonic disperse one hour in 2mL ethanol is weighed, takes 1mL dispersion liquid czochralski methods
Obtain TiO2/ ITO electrode;
(3) by TiO2/ ITO electrode is put into baking oven the freeze-day with constant temperature under the conditions of 35~45 DEG C and obtains TiO2/ ITO electrode.
The structure of the optical electro-chemistry fuel cell of the present embodiment, concrete operation step are as follows:
With the TiO of above-mentioned preparation2/ ITO electrode does anode, and ITO electrode does negative electrode, and the working electrode with work station connects respectively
The end of a thread connects with reference electrode connector lug;0.1mol/L sodium sulfite solution is added in anode pool, and (electrolyte solution pH value is
11-14), adding glucose (fuel) makes its concentration be 1.0mol/L;The copper acetate for adding 0.1mol/L in cathode pool again is molten
Liquid (copper source), connect with saturation potassium chloride salt bridging between two ponds, structure forms photocatalytic fuel cell under ultra violet lamp.
The photocatalytic fuel cell of embodiment 2 driving reduction deposited oxide is cuprous
Illustrate TiO in the photocatalytic fuel cell of the structure of embodiment 12/ ITO electrode and ITO electrode deposited oxide are cuprous
Current course, concrete operation step are as follows:
(1) TiO prepared with embodiment 12/ ITO electrode does anode, and ITO electrode does negative electrode, respectively with the work of work station
Electrode connection head connects with reference electrode connector lug;Into anode pool add 1.5mL concentration be 0.1mol, the sulfurous that pH value is 12
Acid sodium solution, adding glucose (fuel) makes its concentration be 1.0mol/L;5mL, 0.1mol/L second are added in cathode pool again
Sour copper solution, it is 25 DEG C that the solution in anode pool is kept with water bath with thermostatic control, sedimentation time 9000s;
(2) photoelectric current of 9000s illumination is measured using electrochemical workstation, as a result as shown in Figure 1;
Gradually increase with the increase photoelectric current of light application time as seen from Figure 1, illumination reaches photoelectricity after certain time
Stream tends to be steady.Fig. 2 is the SEM figures of the cuprous oxide deposited under ultraviolet lighting on ITO, it can be seen that single cuprous oxide
The shape of petal is presented in crystal, and petal is made up of 3 pieces above and following 6 pieces.
The effect that ultraviolet radiation and fuel deposit to cuprous oxide in the photocatalytic fuel cell of embodiment 3
The test of the photocatalytic fuel cell performance built to embodiment 1, concrete operation step are as follows:
The dark electric current and power diagram with illumination condition of measurement respectively, regulation are connected to the anode of photocatalytic fuel cell
The resistance value of resistance box between negative electrode, the current density and power density of survey calculation photocatalytic fuel cell with voltage change
Curve, as a result as shown in Figures 3 and 4.Fuel cell in the photoelectrocatalysis fuel cell that embodiment 1 is built in dark conditions
Circuit photocurrent density is 250.6 μ Acm-2, the maximum power density under 0.3V is 26.2 μ Wcm-2, in ultraviolet lighting
Penetrate down, the circuit photocurrent density for the photocatalytic fuel cell that embodiment 1 is built is 327 μ Acm-2, the maximum work under 0.3V
Rate density is 34.3 μ Wcm-2, short circuit current increases by 77.1 μ Acm when turning on light during relative to dark-2, peak power increase
8.1μW·cm-2.Account for peak power by increased power 23.6% can obtain the ultraviolet light in the deposition process of cuprous oxide
The energy proportion of contribution is 23.6%, shows that constructed photocatalytic fuel cell has preferable battery performance, ultraviolet light pair
A facilitation is played in the deposition of cuprous oxide, can realize luminous energy and chemical energy to electric transformation of energy simultaneously.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (9)
1. a kind of preparation method of petal-shaped cuprous oxide, it is characterised in that including following operating procedure:
(1) one layer of TiO is deposited on ITO by czochralski method2Film, then freeze-day with constant temperature make TiO2/ ITO electrode;
(2) with TiO obtained by step (1)2/ ITO electrode as anode, using conducting base as negative electrode, respectively with electrochemical workstation
2 electrode contacts connection;Addition sodium sulfite solution makees electrolyte solution in anode pool, addition glucose makees fuel,
Acetic acid copper solution is added in cathode pool, is built into photocatalytic fuel cell;Then deposition obtains petal-shaped under ultraviolet light
Cuprous oxide.
A kind of 2. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (1) is described
Make TiO2/ ITO electrode is particular by the immersion lifting making TiO in P25 titanium dioxide ethanol colloidal sols2/ ITO electrode.
A kind of 3. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (1) is described
Freeze-day with constant temperature is dried under the conditions of 35~45 DEG C.
A kind of 4. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (2) is described
TiO2/ ITO electrode is as light anode.
A kind of 5. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (2) is described
The concentration of sodium sulfite solution is 0.01~1mol/L, and pH value is 11~14.
A kind of 6. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (2) is described
Concentration of the glucose in anode pool electrolyte solution is 0.001~4mol/L.
A kind of 7. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (2) is described
The concentration of acetic acid copper solution is 0.001~0.4mol/L in cathode pool.
A kind of 8. preparation method of petal-shaped cuprous oxide according to claim 1, it is characterised in that:Step (2) is described
Connect between anode pool and cathode pool with saturation potassium chloride salt bridging.
9. the petal-shaped cuprous oxide being prepared according to any one of claim 1~8 preparation method.
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CN106629814B (en) * | 2017-01-23 | 2017-11-10 | 吉林大学 | A kind of application in the three-D nano-porous material of the cuprous oxide of sulfur doping and its electrochemistry evolving hydrogen reaction |
CN107946607B (en) * | 2017-10-31 | 2020-02-14 | 华南师范大学 | Method for constructing photo-assisted fuel cell by using electro-catalyst nickel oxide and application of photo-assisted fuel cell in degradation of pollutant bisphenol A |
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