CN105792605A - Three-dimensional space network porous and high-efficiency heat sink and application - Google Patents
Three-dimensional space network porous and high-efficiency heat sink and application Download PDFInfo
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- CN105792605A CN105792605A CN201610162581.8A CN201610162581A CN105792605A CN 105792605 A CN105792605 A CN 105792605A CN 201610162581 A CN201610162581 A CN 201610162581A CN 105792605 A CN105792605 A CN 105792605A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
- H05K7/20136—Forced ventilation, e.g. by fans
- H05K7/20154—Heat dissipaters coupled to components
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20263—Heat dissipaters releasing heat from coolant
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Abstract
The invention relates to a three-dimensional space network porous and high-efficiency heat sink and application. The heat sink comprises a three-dimensional space network porous heat dissipation body, a shell, a heat exchange fluid and a driving device, wherein the three-dimensional space network porous heat dissipation body comprises a foamed metal framework and a high-heat conduction reinforcement layer, the high-heat conduction reinforcement layer is uniformly deposited on the surface of the foamed metal framework by a chemical vapor deposition method, and the high-heat conduction reinforcement layer is selected from one of a diamond film, graphene clad diamond, carbon nanotube clad diamond and carbon nanotube/graphene clad diamond. The heat dissipation body in the high-efficiency heat sink prepared according to the invention forms a fully-connected whole in a seamless connection mode and is uniformly distributed in the shell in a three-dimensional network mode; compared with a traditional heat sink, the heat sink has the advantages of excellent continuous heat conduction capability, a liquid-state or a gas-state fluid can be introduced into the space network to promote heat dissipation, and the heat sink can be widely applied to the national economic field such as thermal management, electron, energy source and traffic.
Description
Technical field
The invention discloses a kind of three-dimensional space network porous high-efficiency radiator and application, belong to thermal management device technical field.
Background technology
Along with complexity and function increase with surprising rapidity, the power of microelectronics system is increasing constantly, and volume but constantly reduces.Electronic component itself is also thermal source, is in the peak of whole device temperature, and too high temperature rise causes the lethal factor of electronic system malfunction and inefficacy often.For making electronic system (particularly sensitive circuit and components and parts) to work sustainedly and stably, to its carry out effectively reliably heat radiation obviously particularly significant therefore, oneself is very urgent to research and develop high efficiency electronic radiation material and correlation technique.
Diamond is one of material that in nature, thermal conductivity is the highest (room temperature is up to 2200W/mK), and its thermal coefficient of expansion and density are only 0.8 × 10 simultaneously-6/ K and 3.52g/cm3, using diamond as strengthening and high-thermal conductive metal compound, ensureing to have desirable thermal coefficient of expansion and be low-density while, more excellent heat conductivility can be obtained.As the thinnest, a kind of novel nano-material that maximum intensity, electrical and thermal conductivity performance are the strongest that have now been found that, Graphene is referred to as " dark fund ", is " king of new material ", and scientist even foretells that Graphene " will thoroughly change 21 century ".Foam metal material there is good heat-conductivity conducting, and self light weight, inexpensive, there is more superior future and market in heat sink material exploitation.
By highly heat-conductive material and foam metal compound, the advantages such as this advanced composite material (ACM) has that density is little, intensity is big, high temperature resistant, anticorrosive, radioprotective, high heat conduction, thermal coefficient of expansion are little.Using this material to make radiator, its thermal conductivity is high, and properties of product are stable, can be effectively improved the service efficiency of electronic equipment, extends the service life of electronic equipment.
Summary of the invention
It is an object of the invention to overcome the deficiency of prior art, it is provided that a kind of simple and reasonable, good heat conductivity, can as the three-dimensional space network porous high-efficiency radiator of electronic package material use and application after electronic package material combines.The present invention utilizes the network blackboard of metal foam, and by building continuous print diamond three-dimensional network at metal foam surface, uprising heat conduction isolated island is high passage of heat, improves the radiating efficiency dissipating device greatly.
nullOne three-dimensional space network porous high-efficiency radiator of the present invention,Described radiator includes three-dimensional space network porous radiator、Shell、Heat-exchange fluid、Driving equipment,Described three-dimensional space network porous radiator is arranged in shell,Heat-exchange fluid is under the pressure of the equipment of driving drives,The fluid passage arranged along shell enters shell inner cavity and flows out along passage,Heat-exchange fluid chamber in the enclosure flows through three-dimensional space network porous radiator,Heat exchange is realized with radiator,It is characterized in that,Described three-dimensional space network porous radiator is by foam metal skeleton、High heat conduction strengthening layer forms,Described high heat conduction strengthening layer passes through chemical gaseous phase depositing process uniform deposition on foam metal skeleton surface,Described high heat conduction strengthening layer is selected from diamond film、Graphene coated diamond、CNT cladding diamond、One in carbon nano tube/graphene cladding diamond.
One three-dimensional space network porous high-efficiency radiator of the present invention, heat-exchange fluid is air or coolant, and driving equipment is fan or circulating pump.
One three-dimensional space network porous high-efficiency radiator of the present invention, fans drive air and three-dimensional space network porous radiator carry out heat exchange and constitute open heat-exchange system;Circulating pump drives coolant and three-dimensional space network porous radiator to carry out heat exchange composition closed type hot exchange system;Closed type hot exchange system, by circulating pump, is located at the fluid passage on shell, and pipeline is constituted.
One three-dimensional space network porous high-efficiency radiator of the present invention, described foam metal skeleton one in nickel foam, foam copper, titanium foam, foam chromium, foam ferronickel.
One three-dimensional space network porous high-efficiency radiator of the present invention, in described foam metal skeleton, foam aperture is 0.01~10mm, percent opening 40%~99%, and foam cells is uniformly distributed or random distribution;Foam framework is planar structure or 3-D solid structure.
One three-dimensional space network porous high-efficiency radiator of the present invention, described high heat conduction strengthening layer thickness is 1nm~2mm.
One three-dimensional space network porous high-efficiency radiator of the present invention, three-dimensional space network porous radiator adopts following methods to prepare:
After the cleaning of foam framework substrate, drying, adopt chemical vapour deposition (CVD) at foam framework surface in situ growing diamond film, obtain the three-dimensional space network porous radiator of the uniform diamond film in surface;Deposition parameter is:
Depositing diamond film:
It is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, grows air pressure 103-104Pa;
Or
Foam framework substrate is cleaned, after drying, chemical vapour deposition (CVD) is adopted to grow graphene coated diamond at foam framework surface in situ, CNT cladding diamond, carbon nano tube/graphene cladding diamond, deposition process applies plasma asistance growth on foam framework substrate, and by adding magnetic field bottom substrate plasma confinement on the nearly surface of foam framework, the strengthening plasma bombardment to foam framework surface, make Graphene or/and be perpendicular to foam framework superficial growth, form Graphene wall, obtain the uniform graphene coated diamond in surface, the three-dimensional space network porous radiator of CNT cladding diamond or carbon nano tube/graphene cladding diamond;Depositing operation is:
Deposited graphite alkene cladding diamond:
First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, and growth air pressure is 103-104Pa;Then, then at diamond surface deposited graphite alkene wall, Graphene is perpendicular to diamond surface growth, forms Graphene wall, and deposition parameter is: it is 0.5-80% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400-1200 DEG C, and growth air pressure is 5-105Pa;Plasma electric current density is 0-50mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;
Deposition of carbon nanotubes cladding diamond:
First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, and growth air pressure is 103-104Pa;Then, a kind of method in plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), physical vapour deposition (PVD) is adopted to deposit nickel, copper, the one of cobalt or composite catalytic layer at deposition surface at diamond surface;Deposition of carbon nanotubes again, deposition parameter is: it is 5-50% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400-1300 DEG C, and growth air pressure is 103-105Pa;Plasma electric current density is 0-30mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;
Deposition of carbon nanotubes/graphene coated diamond:
First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5 10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600 1000 DEG C, and growth air pressure is 103‐104Pa;Then, a kind of method in plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), physical vapour deposition (PVD) is adopted to deposit nickel, copper, the one of cobalt or composite catalytic layer at deposition surface in diamond surface deposition;Again deposition of carbon nanotubes woods, Graphene wall;CNT woods deposition parameter is: it is 5 50% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400 1300 DEG C, and growth air pressure is 103‐105Pa;Plasma electric current density is 0 30mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;Graphene wall deposition parameter is: it is 0.5 80% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400 1200 DEG C, and growth air pressure is 5 105Pa;Plasma electric current density is 0 50mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas.
One three-dimensional space network porous high-efficiency radiator of the present invention, after the cleaning of foam framework substrate, drying, a kind of method in plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), physical vapour deposition (PVD) is first adopted to deposit the one in nickel, copper, tungsten, molybdenum, titanium, silver, chromium or complex metal layer at substrate surface, then, it is placed in nanocrystalline and the suspension of micron diamond hybrid particles, shake in ultrasound wave, be uniformly dispersed, obtain the nanocrystalline foam framework substrate with micron diamond granule of mesh surface absorption;Adopt chemical vapour deposition (CVD) at foam framework surface or diamond particle surfaces growth in situ diamond film, graphene coated diamond, CNT cladding diamond, carbon nano tube/graphene cladding diamond bubble facial bone frame substrate, obtain three-dimensional space network porous radiator.
The application of a kind of three-dimensional space network porous high-efficiency radiator of the present invention, is be connected with electronic package material by three-dimensional space network porous high-efficiency radiator shell, as the electronic package material possessing self heat dissipation function.
This patent selects the foam metal of easily prepared and seamless link as substrate, chemical vapour deposition technique is utilized to prepare High Quality Diamond Films layer on its surface, construct diamond three-dimensional network skeleton, the three-dimensional space network porous radiator prepared by the method can intactly replicate the structure of foam metal, on radiator, the highly heat-conductive material of deposition constitutes the entirety of a full-mesh in a seamless fashion, there is the continuous capacity of heat transmission of excellence, the thermal conductivity making radiator traditional heat sinks of comparing has very big raising, would is that the very potential new radiator of one, can be widely applied at heat management, electronics, the energy, the national economy fields such as traffic.
Figure of description
Accompanying drawing 1 carries out heat exchange for fans drive air of the present invention and three-dimensional space network porous radiator and constitutes open heat-exchange system structural representation.
Accompanying drawing 2 drives coolant and three-dimensional space network porous radiator to carry out heat exchange composition closed type hot exchange system structural representation for circulating pump of the present invention.
Detailed description of the invention
Embodiment one:
(1) foam Cu substrate carrying out acetone is ultrasonic to be washed respectively, dilute sulfuric acid is ultrasonic to be washed, and deionized water is ultrasonic to be washed.Then adopting magnetically controlled sputter method to sputter Mo rete thereon in the above, wherein Mo film thickness is 100nm;
(2) step (1) gained foam Cu substrate will adopt HF CVD depositing diamond film, deposition process parameters: heated filament distance substrate 6mm, substrate temperature 850 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, sedimentation time 50 hours, CH4/H2Volume flow ratio 1:99;Obtain three dimensions diamond network porous radiator.
(3) three-dimensional space network porous high-efficiency radiator is loaded with its volume quite, the shell that inwall is in close contact therewith, constitute a radiator, radiator is connected with electronic package material, as the electronic package material possessing self heat dissipation function.
Embodiment two:
(1) foam Ti substrate carrying out acetone is ultrasonic to be washed respectively, dilute sulfuric acid is ultrasonic to be washed, and deionized water is ultrasonic to be washed.Then adopting magnetically controlled sputter method to sputter W rete thereon in the above, wherein W film thickness is 300nm;
(2) step (1) gained foam Ti substrate will adopt HF CVD deposited graphite alkene film, deposition process parameters: heated filament distance substrate 6mm, substrate temperature 900 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 4KPa, plasma electric current density 40mA/cm2 sedimentation time 30 hours, CH4/H2Volume flow ratio 6:94, obtains three dimensions Graphene network porous radiator.
(3) gained radiator one side being combined closely with copper coin, another side installs fan, constitutes air-cooled radiator.
Embodiment three:
(1) foam Ti substrate carrying out acetone is ultrasonic to be washed respectively, dilute sulfuric acid is ultrasonic to be washed, and deionized water is ultrasonic to be washed.Then the method adopting vacuum evaporation in the above sputters Ni rete thereon, and wherein Ni film thickness is 500nm;
(2) modified for step (1) gained foam Ti substrate will adopt HF CVD deposition of carbon nanotubes film, deposition process parameters: heated filament distance substrate 8mm, substrate temperature 900 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 6KPa, plasma electric current density 20mA/cm2, sedimentation time 2 hours, CH4/H2Volume flow ratio 15:85.
(3) gained three-dimensional porous material loads suitable with its volume, and inwall is in close contact therewith, and both sides have in the copper mold of paddle hole, connects circulating water cooling system in holes, constitutes water-filled radiator.
Embodiment four:
(1) in the high-purity copper plates that thickness is polished for 5mm, one piece of 20mm foam plastics is fixed, through CrO3+H2SO4Solution oxide alligatoring, then through cleaning, reduction, at SnCl2Sensitized treatment in+HCl solution, at PdCl2Activation processing in+HCl solution, immerses CuSO4Chemical plating in electrolyte, thickness of coating is 10 μm.The foam copper that copper coin supports is prepared by annealing then through carrying out hydrogen reduction at 800 DEG C.
(2) copper coin supporting foam copper and is placed in acetone ultrasonic cleaning, dilute sulfuric acid is ultrasonic to be washed, and deionized water for ultrasonic is washed.Sticking high-temp glue on copper coin surface, then sputter one layer of Cr rete at foam segment, the thickness of Cr layer is 800nm.
(3) on above-mentioned (2) gained substrate, HF CVD honeycomb substrate surface depositing diamond film after modification, deposition process parameters: heated filament distance 6mm, substrate temperature 800 DEG C, hot-wire temperature 2200 DEG C, deposition pressure 3KPa, CH are adopted4/H2Volume flow ratio 1:99, after depositing 30 hours, changing substrate temperature is 1000 DEG C, deposition pressure 5KPa, CH4/H2Volume ratio 5:95, plasma electric current density 15mA/cm2, magnetic field intensity 1000 Gauss in deposition region.Induced growth graphene film, the time is 1h.Remove copper coin surface high-temp glue, obtain three-dimensional space network porous radiator.
Three-dimensional space network porous radiator and electronic package material without copper coin side surface combination and are installed fan, may make up air-cooled radiator.
Claims (9)
- null1. a three-dimensional space network porous high-efficiency radiator,Described radiator includes three-dimensional space network porous radiator、Shell、Heat-exchange fluid、Driving equipment,Described three-dimensional space network porous radiator is arranged in shell,Heat-exchange fluid is under the pressure of the equipment of driving drives,The fluid passage arranged along shell enters shell inner cavity and flows out along passage,Heat-exchange fluid chamber in the enclosure flows through three-dimensional space network porous radiator,Heat exchange is realized with radiator,It is characterized in that,Described three-dimensional space network porous radiator is by foam metal skeleton、High heat conduction strengthening layer forms,Described high heat conduction strengthening layer passes through chemical gaseous phase depositing process uniform deposition on foam metal skeleton surface,Described high heat conduction strengthening layer is selected from diamond film、Graphene coated diamond、CNT cladding diamond、One in carbon nano tube/graphene cladding diamond.
- 2. a kind of three-dimensional space network porous high-efficiency radiator according to claim 1, it is characterised in that: heat-exchange fluid is air or coolant, and driving equipment is fan or circulating pump.
- 3. a kind of three-dimensional space network porous high-efficiency radiator according to claim 2, it is characterised in that: fans drive air and three-dimensional space network porous radiator carry out heat exchange and constitute open heat-exchange system;Circulating pump drives coolant and three-dimensional space network porous radiator to carry out heat exchange composition closed type hot exchange system;Closed type hot exchange system, by circulating pump, is located at the fluid passage on shell, and pipeline is constituted.
- 4. a kind of three-dimensional space network porous high-efficiency radiator according to claim 1, it is characterised in that: described foam metal skeleton one in nickel foam, foam copper, titanium foam, foam chromium, foam ferronickel.
- 5. a kind of three-dimensional space network porous high-efficiency radiator according to claim 4, it is characterised in that: in described foam metal skeleton, foam aperture is 0.01~10mm, percent opening 40%~99%, and foam cells is uniformly distributed or random distribution;Foam framework is planar structure or 3-D solid structure.
- 6. a kind of three-dimensional space network porous high-efficiency radiator according to claim 1, it is characterised in that: described high heat conduction strengthening layer thickness is 1nm~2mm.
- 7. a kind of three-dimensional space network porous high-efficiency radiator according to claim 1, it is characterised in that: three-dimensional space network porous radiator adopts following methods to prepare:After the cleaning of foam framework substrate, drying, adopt chemical vapour deposition (CVD) at foam framework surface in situ growing diamond film, obtain the three-dimensional space network porous radiator of the uniform diamond film in surface;Deposition parameter is:Depositing diamond film:It is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, grows air pressure 103-104Pa;OrFoam framework substrate is cleaned, after drying, chemical vapour deposition (CVD) is adopted to grow graphene coated diamond at foam framework surface in situ, CNT cladding diamond, carbon nano tube/graphene cladding diamond, deposition process applies plasma asistance growth on foam framework substrate, and by adding magnetic field bottom substrate plasma confinement on the nearly surface of foam framework, the strengthening plasma bombardment to foam framework surface, make Graphene or/and CNT is perpendicular to foam framework superficial growth, form Graphene wall, obtain the uniform graphene coated diamond in surface, the three-dimensional space network porous radiator of CNT cladding diamond or carbon nano tube/graphene cladding diamond;Depositing operation is:Deposited graphite alkene cladding diamond:First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, grows air pressure 103-104Pa;Then, then at diamond surface deposited graphite alkene wall, Graphene is perpendicular to diamond surface growth, forms Graphene wall, and deposition parameter is: it is 5-80% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400-1200 DEG C, grows air pressure 5-105Pa;Plasma electric current density 0-50mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;Deposition of carbon nanotubes cladding diamond:First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5-10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600-1000 DEG C, grows air pressure 103-104Pa;Then, a kind of method in plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), physical vapour deposition (PVD) is adopted to deposit nickel, copper, the one of cobalt or composite catalytic layer at deposition surface at diamond surface;Deposition of carbon nanotubes again, deposition parameter is: it is 5-50% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400-1300 DEG C, grows air pressure 103-105Pa;Plasma electric current density 0-30mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;Deposition of carbon nanotubes/graphene coated diamond:First, adopting chemical vapour deposition technique at substrate surface depositing diamond, deposition parameter is: it is 0.5 10.0% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 600 1000 DEG C, grows air pressure 103‐104Pa;Then, a kind of method in plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), physical vapour deposition (PVD) is adopted to deposit nickel, copper, the one of cobalt or composite catalytic layer at deposition surface in diamond surface deposition;Again deposition of carbon nanotubes woods, Graphene wall;CNT woods deposition parameter is: it is 5 50% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400 1300 DEG C, grows air pressure 103‐105Pa;Plasma electric current density 0 30mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas;Graphene wall deposition parameter is: it is 5 80% that carbonaceous gas accounts for all gas mass flow percentage ratio in stove;Growth temperature is 400 1200 DEG C, grows air pressure 5 105Pa;Plasma electric current density 0 50mA/cm2;In deposition region, magnetic field intensity is 100 Gausses to 30 teslas.
- 8. a kind of three-dimensional space network porous high-efficiency radiator according to claim 7, it is characterized in that: foam framework substrate cleans, after drying, first adopt plating, chemical plating, evaporation, magnetron sputtering, chemical vapour deposition (CVD), a kind of method in physical vapour deposition (PVD) deposits nickel at substrate surface, copper, tungsten, molybdenum, titanium, silver, one in chromium or complex metal layer, then, it is placed in nanocrystalline and the suspension of micron diamond hybrid particles, shake in ultrasound wave, it is uniformly dispersed, obtain mesh surface and be adsorbed with nanocrystalline and micron diamond granule foam framework substrate;Adopt chemical vapour deposition (CVD) at foam framework surface or diamond particle surfaces growth in situ diamond film, graphene coated diamond, CNT cladding diamond, carbon nano tube/graphene cladding diamond bubble facial bone frame substrate, obtain three-dimensional space network porous radiator.
- 9. an application for three-dimensional space network porous high-efficiency radiator, is be connected with electronic package material by three-dimensional space network porous high-efficiency radiator shell, as the electronic package material possessing self heat dissipation function.
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WO2017161993A1 (en) * | 2016-03-21 | 2017-09-28 | 中南大学 | Foam skeleton reinforced composite, preparation method therefor, and application thereof |
CN107541756A (en) * | 2017-08-31 | 2018-01-05 | 太仓市华天冲压五金制品厂 | A kind of manufacture craft of heat radiator fin foam metal plate |
CN107845616A (en) * | 2017-11-09 | 2018-03-27 | 青岛理工大学 | Nested ultrahigh-thermal-conductivity diamond film/silicon-based composite material and preparation method thereof |
CN108831986A (en) * | 2018-05-07 | 2018-11-16 | 深圳技术大学(筹) | heat sink device and preparation method thereof |
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