CN105790205B - A kind of high voltage pulse modulator klystron protector - Google Patents
A kind of high voltage pulse modulator klystron protector Download PDFInfo
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- CN105790205B CN105790205B CN201610233986.6A CN201610233986A CN105790205B CN 105790205 B CN105790205 B CN 105790205B CN 201610233986 A CN201610233986 A CN 201610233986A CN 105790205 B CN105790205 B CN 105790205B
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- Prior art keywords
- resistance
- klystron
- high voltage
- modulator
- capacitor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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Abstract
The invention discloses a kind of high voltage pulse modulator klystron protectors, shell, it is characterized in that, the inside of the shell is equipped with circuit board, and circuit board is equipped with klystron G1, one end of the klystron G1 is connected with filament supply U1, one end of modulator T and one end of resistance R2, the other end of the klystron G1 is connected with one end of resistance R4, and the other end ground connection of klystron G1, the other end of the modulator T is connected with the output end of klystron G1, the other end of the resistance R2 is connected with one end of the primary coil L2 of pulse transformer B, and the other end of the primary coil L2 of pulse transformer B is connected with one end of resistance R1 and the adjacent electrode of triggering pipe G2, the other end of the resistance R1 is connected with one end and the high voltage power supply U2 of capacitor C1, the capacitor C1 The other end and high voltage power supply U2 connected with the comparative electrode of triggering pipe G2.Structure of the invention is simple, and cost is relatively low, and triggering performance is good, and can preferably protect to klystron G1.
Description
Technical field
The present invention relates to field of circuit technology more particularly to a kind of high voltage pulse modulator klystron protectors.
Background technique
China's hash neutron source has obtained national official approval, high current matter as the big science engineering of national basis research
Sub- linear accelerator be China hash neutron source important component, in linear accelerator, the task of radio frequency system be to
Proton beam provides necessary energy, since radio frequency system is operate on pulse condition, so high voltage pulse modulator klystron
Protective device is the important component of radio frequency system, and current high voltage pulse modulator klystron protector cannot be good
Protect the safety of radio frequency system.
Summary of the invention
The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of high voltage pulse modulator proposed
Klystron protective device.
To achieve the goals above, present invention employs following technical solutions:
A kind of high voltage pulse modulator klystron protector, including shell, the inside of the shell are equipped with circuit board, and
Circuit board is equipped with klystron G1, and one end of the klystron G1 is connected with filament supply U1, one end of modulator T and resistance R2
One end, the other end of the klystron G1 is connected with one end of resistance R4, and the other end ground connection of klystron G1, the modulation
The other end of device T is connected with the output end of klystron G1, and the other end of the resistance R2 is connected with the primary line of pulse transformer B
One end of L2 is enclosed, and the other end of the primary coil L2 of pulse transformer B is connected with one end of resistance R1 and the phase of triggering pipe G2
Adjacent electrode, the other end of the resistance R1 are connected with one end and the high voltage power supply U2 of capacitor C1, the other end of the capacitor C1 and
High voltage power supply U2 is connected with the comparative electrode of triggering pipe G2, and the trigger electrode of the triggering pipe G2 is connected with one end of resistance R3, electricity
One end of R6 and the collector of PNP transistor VT2 are hindered, the other end of the resistance R3 is connected with the secondary coil of transformer B
One end of L1, and the other end of the secondary coil L1 of transformer B is connected with the base stage of NPN transistor VT1, the resistance R6's
Other end ground connection, the emitter of the PNP transistor VT2 are connected with one end of resistance R5, and the other end of resistance R5 and touching
The comparative electrode of hair pipe G2 is connected with one end of resistance R4, the other end of the resistance R4 and the collector of NPN transistor VT1
It is connected with the base stage of the PNP transistor VT2, and the emitter of NPN transistor VT1 is connected with one end of resistance R7, institute
State the other end ground connection of resistance R7.
Preferably, the triggering pipe G2 is cold cathode trigger tube.
Preferably, the capacitor C1 is storage capacitor.
Preferably, the modulator T is floating-deck modulator.
In the present invention, by triggering pipe G2 and capacitor C1, there can be defencive function to klystron G1, prevent klystron G1
It damages, by NPN transistor VT1 and PNP transistor VT2, the electric current of transformer B output is amplified, is had
Better Trigger Function preferably protects klystron G1 that can adjust to the size of current of circuit by pulse transformer B
Section, structure of the invention is simple, and cost is relatively low, and triggering performance is good, and it is small to be delayed.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of high voltage pulse modulator klystron protector proposed by the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
Referring to Fig.1, the inside of a kind of high voltage pulse modulator klystron protector, including shell, the shell is equipped with
Circuit board, and circuit board be equipped with klystron G1, one end of the klystron G1 be connected with filament supply U1, modulator T one
The one end at end and resistance R2, the other end of the klystron G1 are connected with one end of resistance R4, and another termination of klystron G1
The other end on ground, the modulator T is connected with the output end of klystron G1, and the other end of the resistance R2 is connected with pulse transforming
One end of the primary coil L2 of device B, and the other end of the primary coil L2 of pulse transformer B is connected with one end and the touching of resistance R1
The adjacent electrode of pipe G2 is sent out, the other end of the resistance R1 is connected with one end and the high voltage power supply U2, the capacitor C1 of capacitor C1
The other end and high voltage power supply U2 connect with the comparative electrode of triggering pipe G2, the trigger electrode for triggering pipe G2 is connected with resistance R3
One end, one end of resistance R6 and the collector of PNP transistor VT2, the other end of the resistance R3 is connected with transformer B's
One end of secondary coil L1, and the other end of the secondary coil L1 of transformer B is connected with the base stage of NPN transistor VT1, it is described
The other end of resistance R6 is grounded, and the emitter of the PNP transistor VT2 is connected with one end of resistance R5, and resistance R5's is another
One end is connected with the comparative electrode of triggering pipe G2 with one end of resistance R4, the other end and NPN transistor VT1 of the resistance R4
Collector connected with the base stage of the PNP transistor VT2, and the emitter of NPN transistor VT1 is connected with resistance R7's
The other end of one end, the resistance R7 is grounded, and in the present invention, by triggering pipe G2 and capacitor C1, can be had to klystron G1
Defencive function prevents klystron G1 from damaging, defeated to transformer B by NPN transistor VT1 and PNP transistor VT2
Electric current out amplifies, and has better Trigger Function, preferably protects klystron G1 can be right by pulse transformer B
The size of current of circuit is adjusted, and structure of the invention is simple, and cost is relatively low, and triggering performance is good, and it is small to be delayed.
In the present invention, the triggering pipe G2 is cold cathode trigger tube, and the capacitor C1 is storage capacitor, the modulator T
For floating-deck modulator, in the present invention, by triggering pipe G2 and capacitor C1, there can be defencive function to klystron G1, prevent
Klystron G1 is damaged, and by NPN transistor VT1 and PNP transistor VT2, is put to the electric current of transformer B output
Greatly, there is better Trigger Function, preferably protect klystron G1 can be to the size of current of circuit by pulse transformer B
It is adjusted, structure of the invention is simple, and cost is relatively low, and triggering performance is good, and it is small to be delayed.
Working principle: when short circuit occurs for klystron G1, the energy of capacitor C1 is let out by triggering pipe G2 and resistance R1
It puts, only few energy passes through klystron G1, can protect to klystron G1, put only klystron G1 and be damaged, and leads to
Cross NPN transistor VT1, PNP transistor VT2, resistance R4, R5, R6 and R7 together constitute a current amplification circuit, right
The current signal of the secondary coil L1 output of pulse transformer B amplifies, so that triggering is sensitiveer.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (4)
1. a kind of high voltage pulse modulator klystron protector, including shell, which is characterized in that the inside of the shell is equipped with
Circuit board, and circuit board be equipped with klystron G1, one end of the klystron G1 be connected with filament supply U1, modulator T one
The one end at end and resistance R2, the other end of the klystron G1 are connected with one end of resistance R4, and another termination of klystron G1
The other end on ground, the modulator T is connected with the output end of klystron G1, and the other end of the resistance R2 is connected with pulse transforming
One end of the primary coil L2 of device B, and the other end of the primary coil L2 of pulse transformer B is connected with one end and the touching of resistance R1
The adjacent electrode of pipe G2 is sent out, the other end of the resistance R1 is connected with one end and the high voltage power supply U2, the capacitor C1 of capacitor C1
The other end and high voltage power supply U2 connect with the comparative electrode of triggering pipe G2, the trigger electrode for triggering pipe G2 is connected with resistance R3
One end, one end of resistance R6 and the collector of PNP transistor VT2, the other end of the resistance R3 is connected with transformer B's
One end of secondary coil L1, and the other end of the secondary coil L1 of transformer B is connected with the base stage of NPN transistor VT1, it is described
The other end of resistance R6 is grounded, and the emitter of the PNP transistor VT2 is connected with one end of resistance R5, and resistance R5's is another
One end is connected with the comparative electrode of triggering pipe G2 with one end of resistance R4, the other end and NPN transistor VT1 of the resistance R4
Collector connected with the base stage of the PNP transistor VT2, and the emitter of NPN transistor VT1 is connected with resistance R7's
One end, the other end ground connection of the resistance R7.
2. a kind of high voltage pulse modulator klystron protector according to claim 1, which is characterized in that the triggering
Pipe G2 is cold cathode trigger tube.
3. a kind of high voltage pulse modulator klystron protector according to claim 1, which is characterized in that the capacitor
C1 is storage capacitor.
4. a kind of high voltage pulse modulator klystron protector according to claim 1, which is characterized in that the modulation
Device T is floating-deck modulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610233986.6A CN105790205B (en) | 2016-04-16 | 2016-04-16 | A kind of high voltage pulse modulator klystron protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610233986.6A CN105790205B (en) | 2016-04-16 | 2016-04-16 | A kind of high voltage pulse modulator klystron protector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105790205A CN105790205A (en) | 2016-07-20 |
| CN105790205B true CN105790205B (en) | 2019-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610233986.6A Active CN105790205B (en) | 2016-04-16 | 2016-04-16 | A kind of high voltage pulse modulator klystron protector |
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| CN (1) | CN105790205B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478139A (en) * | 2009-01-22 | 2009-07-08 | 中国科学院等离子体物理研究所 | Multi-path large power velocity modulated valve overcurrent real-time protection apparatus having on-line self-detection function |
| CN103414152A (en) * | 2013-05-24 | 2013-11-27 | 中国科学院等离子体物理研究所 | Overcurrent protection device for klystron of low-hybrid wave heating system |
| CN103746360A (en) * | 2014-01-10 | 2014-04-23 | 北京长峰广播通讯设备有限责任公司 | High voltage pulse modulator klystron protector |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE0401780D0 (en) * | 2004-07-02 | 2004-07-02 | Scandinova Ab | Protection circuit |
-
2016
- 2016-04-16 CN CN201610233986.6A patent/CN105790205B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478139A (en) * | 2009-01-22 | 2009-07-08 | 中国科学院等离子体物理研究所 | Multi-path large power velocity modulated valve overcurrent real-time protection apparatus having on-line self-detection function |
| CN103414152A (en) * | 2013-05-24 | 2013-11-27 | 中国科学院等离子体物理研究所 | Overcurrent protection device for klystron of low-hybrid wave heating system |
| CN103746360A (en) * | 2014-01-10 | 2014-04-23 | 北京长峰广播通讯设备有限责任公司 | High voltage pulse modulator klystron protector |
Non-Patent Citations (1)
| Title |
|---|
| 新型S波段高功率速调管发射机的设计;刘超等;《微波学报》;20101231;第26卷(第6期);第71-74页 |
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| Publication number | Publication date |
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| CN105790205A (en) | 2016-07-20 |
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