CN105790066B - A kind of tunable laser - Google Patents
A kind of tunable laser Download PDFInfo
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- CN105790066B CN105790066B CN201410823788.6A CN201410823788A CN105790066B CN 105790066 B CN105790066 B CN 105790066B CN 201410823788 A CN201410823788 A CN 201410823788A CN 105790066 B CN105790066 B CN 105790066B
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- polarization beam
- wave plate
- beam splitter
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Abstract
The invention discloses a kind of tunable laser, including bandwidth laser chip, collimation lens, 1/2 wave plate, polarization beam splitter prism, Si heating plain film and the output cavity mirror being successively disposed adjacent.The invention has the benefit that optical path is divided into p light, the s light of polarized orthogonal by polarization beam splitter prism (hereinafter referred to as " PBS "), 1/2 wave plate then adjusts the splitting ratio of PBS, and output cavity mirror makes it be all-trans s light by way of plated film, reflects p light part.Si heating plain film is placed in the optical path of p light or s light, can change the light path of the optical path by way of heating.
Description
Technical field
The present invention relates to optical communication field more particularly to a kind of tunable laser.
Background technique
Tunable laser is widely used in the transponder of photoelectric communication system of the prior art.Entirely with tunable
Laser can make transponder for any wavelength in C band or L band, it is spare reduce inventory in this way, and can be realized hair
The wavelength agility of emitter node.Tunable laser is also used to by the forwarding of many 40G and all 100G (more than and)
The coherent transmitting that device uses.
Existing tunable laser is segmented into three classes: (1) use mechanical displaceable element, as diffraction grating, prism,
Etalon or MEMS(microelectromechanical systems) etc. system as wavelength regulation unit;(2) by adjusting temperature, heating or cold
But component is come the system of selecting wavelength;(3) system being adjusted using intracavitary immovable optical device, including use magnetic
Optical device, acousto-optical device, electro-optical device select wavelength by Injection Current in a manner of physics.
Summary of the invention
The present invention provides a kind of tunable laser, changes the light path of optical path in such a way that heating Si heats plain film, real
The function of existing wavelength regulation.
The present invention is realized using following technical scheme: a kind of tunable laser, including the bandwidth being successively disposed adjacent
Laser chip, collimation lens, 1/2 wave plate, polarization beam splitter prism, Si heating plain film and output cavity mirror.
Preferably, the output cavity mirror has different reflectivity to the two-way light after polarization beam splitting, and a kind of polarised light is all-trans
It penetrates, another part is reflected.
Further, the polarization beam splitter prism can be substituted by walk-off crystal.
The invention has the benefit that optical path is divided into the p of polarized orthogonal by polarization beam splitter prism (hereinafter referred to as " PBS ")
Light, s light, 1/2 wave plate then adjust the splitting ratio of PBS, and output cavity mirror makes it be all-trans s light by way of plated film, to p light portion
Divide reflection.Si heating plain film is placed in the optical path of p light or s light, can change the light path of the optical path by way of heating.
Detailed description of the invention
Fig. 1 is the structure principle chart of the embodiment of the present invention one;
Fig. 2 is the structure principle chart of the embodiment of the present invention two;
Appended drawing reference: 1, broadband semiconductor chip of laser;2, collimation lens;3,1/2 wave plate;4, polarization beam splitter prism
(PBS);5, Si heats plain film;6, output cavity mirror;7, walk-off crystal.
Specific embodiment
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Embodiment one, as shown in Figure 1.The emission spectrum of semiconductor laser chip covers entire C-band or L-band.Out
It penetrates after light is coupled by collimation lens and enters tuning exocoel.Optical path is divided into the p light of polarized orthogonal, s light by PBS, and 1/2 wave plate is then adjusted
The splitting ratio of PBS.Output cavity mirror makes it be all-trans s light by way of plated film, reflects p light part.The chamber of p light optical path is long
Meet its output spectra to be overlapped with ITU wavelength;Si heating plain film is placed in s light optical path, by heating so that the output spectra of s light optical path
It is adjustable.When only wavelength meets the output spectra and the output spectra of s optical path of p optical path simultaneously, ability continuous gain is exported to outside chamber, from
And obtain single longitudinal mode narrow line width regulatable laser.Si heating plain film can also be placed in p light optical path, adjust output cavity mirror to p light
It is all-trans, s light part is reflected, the chamber length of s light optical path meets its output spectra and is overlapped with ITU wavelength.
Embodiment two, as shown in Fig. 2, with embodiment one the difference is that: PBS is replaced by walk-off crystal.
Optical path is divided into o light, the e light of polarized orthogonal by walk-off crystal, 1/2 wave plate then adjusts the splitting ratio of walk-off crystal.
Output cavity mirror makes it be all-trans o light by way of plated film, reflects e light part.The chamber length of o light optical path meets its output spectra
It is overlapped with ITU wavelength;Si heating plain film is placed in the optical path of o light, by heating so that the output spectra of e light optical path is adjustable.Only
When wavelength meets the output spectra and the output spectra of e optical path of o optical path simultaneously, ability continuous gain is exported to outside chamber, to obtain list
Longitudinal mode narrow line width regulatable laser.Si heating plain film can also be placed in e light optical path, and adjustment output cavity mirror is all-trans to e light, to o
The reflection of light part, the chamber length of e light optical path meet its output spectra and are overlapped with ITU wavelength.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, in the form and details to this hair
It is bright to make a variety of changes, it is protection scope of the present invention.
Claims (2)
1. a kind of tunable laser, which is characterized in that including be successively disposed adjacent bandwidth laser device chip, collimation lens,
1/2 wave plate, polarization beam splitter prism, Si heating plain film and output cavity mirror;The emergent light of the chip of laser is by collimation lens coupling
It closes on 1/2 wave plate, optical path is divided into the p light of polarized orthogonal, s light by the polarization beam splitter prism, and 1/2 wave plate is then adjusted
Save the splitting ratio of the polarization beam splitter prism;The output cavity mirror to the two-way light after polarization beam splitting have different reflectivity, one
Kind polarization light total reflection, another part are reflected;The Si heating plain film is set to the polarised light being totally reflected by the output cavity mirror
Lu Zhong.
2. a kind of tunable laser as described in claim 1, which is characterized in that the polarization beam splitter prism is by walk-off
Optical path is divided into the o light and e light of polarized orthogonal by crystal substitution, the walk-off crystal, described in 1/2 wave plate is adjusted
The splitting ratio of walk-off crystal.
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CN201410823788.6A CN105790066B (en) | 2014-12-26 | 2014-12-26 | A kind of tunable laser |
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CN201410823788.6A CN105790066B (en) | 2014-12-26 | 2014-12-26 | A kind of tunable laser |
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CN105790066A CN105790066A (en) | 2016-07-20 |
CN105790066B true CN105790066B (en) | 2019-07-05 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101344649A (en) * | 2008-08-28 | 2009-01-14 | 福州高意通讯有限公司 | Modulation standard tool, wave plate and other optical element optical length method |
CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
CN201478686U (en) * | 2009-08-17 | 2010-05-19 | 福州高意通讯有限公司 | Double-cavity laser |
CN102087371A (en) * | 2010-12-10 | 2011-06-08 | 福州高意通讯有限公司 | Optical slice heating method and tunable FP (Fabry-Perot) filter |
CN102868090A (en) * | 2012-09-28 | 2013-01-09 | 武汉光迅科技股份有限公司 | Laser device with tunable outer cavity and flexible wavelength grid tuning function |
CN203069824U (en) * | 2013-01-23 | 2013-07-17 | 福州高意通讯有限公司 | Inter leaver unit structure |
-
2014
- 2014-12-26 CN CN201410823788.6A patent/CN105790066B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101344649A (en) * | 2008-08-28 | 2009-01-14 | 福州高意通讯有限公司 | Modulation standard tool, wave plate and other optical element optical length method |
CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
CN201478686U (en) * | 2009-08-17 | 2010-05-19 | 福州高意通讯有限公司 | Double-cavity laser |
CN102087371A (en) * | 2010-12-10 | 2011-06-08 | 福州高意通讯有限公司 | Optical slice heating method and tunable FP (Fabry-Perot) filter |
CN102868090A (en) * | 2012-09-28 | 2013-01-09 | 武汉光迅科技股份有限公司 | Laser device with tunable outer cavity and flexible wavelength grid tuning function |
CN203069824U (en) * | 2013-01-23 | 2013-07-17 | 福州高意通讯有限公司 | Inter leaver unit structure |
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