CN105789189B - Radio frequency inductive element based on silicon-on-insulator substrate and preparation method thereof - Google Patents
Radio frequency inductive element based on silicon-on-insulator substrate and preparation method thereof Download PDFInfo
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- CN105789189B CN105789189B CN201610301899.XA CN201610301899A CN105789189B CN 105789189 B CN105789189 B CN 105789189B CN 201610301899 A CN201610301899 A CN 201610301899A CN 105789189 B CN105789189 B CN 105789189B
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Abstract
The present invention provides a kind of radio frequency inductive element based on silicon-on-insulator substrate and preparation method thereof, and the preparation method includes：1）Prepare silicon-on-insulator substrate, the silicon-on-insulator substrate includes the bottom silicon, insulating layer and the top layer silicon that stack gradually, and the lower part of the insulating layer is in having the groove at least up to the bottom silicon corresponding to the position for preparing radio frequency inductive element；2）Device area is defined in the corresponding position with the groove, and etch the top layer silicon in removal devices region by mask lithography, exposes the upper face of the lower section insulating layer；3）Radio frequency inductive element is prepared in device area based on CMOS technology.The present invention is based on patterned silicon-on-insulator substrates, etch to have obtained the inductance element with substrate cavity by the later stage.The device architecture can effectively inhibit inductor loss caused by silicon substrate, and reduce parasitic capacitance, be conducive to improve the Q values and its resonant frequency of inductance component.
Description
Technical field
The present invention relates to a kind of semiconductor components and devices and preparation method thereof, are served as a contrast more particularly to one kind based on silicon-on-insulator
The radio frequency inductive element at bottom and preparation method thereof.
Background technology
Wireless communication technique is one of technology with the fastest developing speed in IT field in recent decades, and radio circuit is in nothing
Play the role of in line communication vital.With the tremendous development of CMOS technology, electronic device is prepared based on CMOS technology
Cost be greatly reduced.According to the report of International Solid circuit annual meeting in recent years, the biggest market of integrated circuit (IC) is not
The excessively network equipment, mobile phone and consumer electronics.China has been the third-largest markets of IC, and market potential enables common people look steadily
Mesh, wherein mobile phone user's quantity hold pride of place in the world.The great advantage for using CMOS RF transmit-receive circuits is can be with
A chip is integrated in baseband processor (digital circuit) and A/D, D/A converter (mixed signal circuit).It is single chip integrated
Make circuit reliability good containing radio frequency, base band and modulus, D/A converting circuit, it is low in energy consumption and at low cost, and chip can be improved
Integrated level reduces peripheral circuit and equipment volume.Monolithic CMOS radio communication circuit is current research hotspot, is had very high
Application and commercial value.
In CMOS RF ICs (RFIC), spiral inductance is to be most difficult to design in a kind of key element and circuit
One of with the element of grasp, its performance parameter directly affects the performance of RF IC.On-chip inductor can realize radio frequency
The integrated problem of inductance in integrated circuit, so as to which the system on chip of RF IC be contributed to realize.
By metallic film, coiling forms on-chip spiral inductor on a silicon substrate mostly, relative to traditional line around inductance,
On-chip spiral inductor have the advantages that it is at low cost, be easily integrated, noise is small and low in energy consumption, it is often more important that can be with CMOS now
Process compatible.Develop recently as mobile communication to micromation, low power consumption, to making the high-quality compatible with CMOS technology
The research of on piece passive device is also more and more.But the ghost effect in spiral inductance, parasitic capacitance, parasitism such as substrate
Resistance, the parasitic capacitance of metallic conductor, dead resistance and dead resistance for being formed due to effects such as eddy-current losses etc., all will
The performance of inductance is had an impact.
As it can be seen that caused by traditional inductance component structure can not inhibit silicon substrate while radio circuit performance is ensured
Inductor loss reduces parasitic capacitance, and the Q values and its resonant frequency of inductance component can not be effectively improved, in addition, passing
The inductance component structure of system also needs to be further improved in terms of heat dissipation.
Based on the above, inductor loss caused by silicon substrate can effectively be inhibited by providing one kind, reduce parasitic capacitance, favorably
It is necessary in radio frequency inductive element of Q values and its resonant frequency for improving inductance component and preparation method thereof.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide one kind to be based on silicon-on-insulator substrate
Radio frequency inductive element and preparation method thereof, for solving, radio frequency inductive element Q values and its resonant frequency are relatively low in the prior art
The problem of.
In order to achieve the above objects and other related objects, the present invention provides a kind of radio frequency electrical based on silicon-on-insulator substrate
The preparation method of sensing unit, the preparation method include step：Step 1) prepares silicon-on-insulator substrate, on the insulator
Silicon substrate includes the bottom silicon, insulating layer and the top layer silicon that stack gradually, and the lower part of the insulating layer is in corresponding to preparing radio frequency electrical
The position of sensing unit has the groove at least up to the bottom silicon；Step 2), by mask lithography in pair with the groove
Position is answered to define device area, and etches the top layer silicon in removal devices region, exposes the upper face of the lower section insulating layer；Step
It is rapid 3), radio frequency inductive element is prepared in device area based on CMOS technology.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
In step 1), there is the empty slot of predetermined depth in the bottom silicon in the groove.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1) prepares silicon-on-insulator substrate and includes：Step 1-1), the first silicon substrate is provided, is formed in first surface of silicon
First insulating layer；Step 1-2), stripping ion implanting is carried out to first silicon substrate based on first insulating layer, in described
Interface is removed defined in silicon substrate；Step 1-3), the second silicon substrate is provided, the second insulation is formed in second surface of silicon
Layer；Step 1-4), mask layer is formed, and formed and carved in the position corresponding to radio frequency inductive element in the second insulating layer surface
Fenetre mouth；Step 1-5), the second insulating layer is etched based on etching window, formation is through to the recessed of second silicon substrate
Slot；Step 1-6), the empty slot of predetermined depth is etched in the second silicon substrate in groove；Step 1-7), bonding described first
Insulating layer and the second insulating layer；Step 1-8), carrying out annealing process makes first silicon substrate be removed from stripping interface,
With silicon top layer of the part that first insulating layer is combined as silicon-on-insulator substrate；Step 1-9), high annealing is carried out, with
Strengthen first insulating layer and the bond strength of the second insulating layer.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1-1) in, silicon dioxide layer is formed in first surface of silicon using thermal oxidation technology, as the first insulating layer；Step
Rapid 1-3) in, silicon dioxide layer is formed in second surface of silicon using thermal oxidation technology, as second insulating layer.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
The thickness of the second insulating layer is not less than 50nm.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1-2) in, the stripping ion is H ions or He ions, and the stripping ion is in the injection depth of first silicon substrate
For 20~2000nm.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1-7) the step of being cleaned to first silicon substrate and the second silicon substrate is further included before bonding.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1-8) in, the atmosphere of annealing process is N2 atmosphere, and the temperature range of annealing process is 400~500 DEG C, so that described first
Silicon substrate is removed from stripping interface.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 1-8) in, further include the step of CMP planarization is carried out to the top layer silicon face.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
Step 3) includes：Step 3-1), make lower metal electrode in the device area；Step 3-2), it is formed in the device area
Medium mesa structure；Step 3-3), etch electrode through-hole in the medium mesa structure；Step 3-4), in the medium
Mesa surfaces make inductance coil, and realize the electric connection with lower metal electrode by the electrode through-hole.
A kind of preferred embodiment of the preparation method of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention,
The radio frequency inductive element is applied to one or more of balun circuit, wave filter, oscillator and tuner.
The present invention also provides a kind of radio frequency inductive element based on silicon-on-insulator substrate, including：Silicon-on-insulator substrate,
The silicon-on-insulator substrate includes the bottom silicon, insulating layer and the top layer silicon that stack gradually, and the lower part of the insulating layer is in correspondence
There is the groove at least up to the bottom silicon in the position for preparing radio frequency inductive element；Device area, the device area are gone
In addition to top layer silicon corresponding with the position of the groove, expose the upper face of underlying insulating layer；And radio frequency inductive element, shape
Device area described in Cheng Yu.
A kind of preferred embodiment of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention, the insulating layer
For silicon dioxide layer, the thickness of the lower part of the insulating layer is not less than 50nm.
A kind of preferred embodiment of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention, the top layer silicon
Thickness range be 20~2000nm.
A kind of preferred embodiment of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention, the radio frequency electrical
Sensing unit includes：Lower metal electrode is formed in the device area surface；Medium mesa structure is formed in the device area
Surface；Electrode through-hole is formed in the medium mesa structure；Inductance coil is formed on the medium mesa structure, and by
Electric connection with the lower metal electrode is realized by the electrode through-hole.
A kind of preferred embodiment of the radio frequency inductive element based on silicon-on-insulator substrate as the present invention, the radio frequency electrical
Sensing unit is applied to one or more of balun circuit, wave filter, oscillator and tuner.
As described above, radio frequency inductive element based on silicon-on-insulator substrate and preparation method thereof of the present invention, have with
Lower advantageous effect：The present invention is based on patterned silicon-on-insulator substrates, etch to have obtained with substrate cavity by the later stage
Inductance element.The device architecture can effectively inhibit inductor loss caused by silicon substrate, and reduce parasitic capacitance, be conducive to improve electricity
The Q values and its resonant frequency of inductor component.In addition, the cavity structure additionally provides good radiating condition.The inductance member of the present invention
Part is as a kind of base components, suitable for numerous integrated RF devices comprising inductor module, as balun circuit, wave filter,
Oscillator, tuner etc..
Description of the drawings
The preparation method that Fig. 1~Figure 16 is shown as the radio frequency inductive element based on silicon-on-insulator substrate of the present invention respectively walks
Suddenly the structure diagram presented, wherein, Figure 15 is shown as the radio frequency inductive element based on silicon-on-insulator substrate of the present invention
Cross section structure schematic diagram, Figure 16 be shown as the present invention the radio frequency inductive element based on silicon-on-insulator substrate plan structure
Schematic diagram.
Component label instructions
101 first silicon substrates
102 first insulating layers
201 second silicon substrates
202 second insulating layers
203 grooves
204 empty slots
301 device areas
302 times metal electrodes
303 medium mesa structures
304 electrode through-holes
305 inductance coils
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Figure 16.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in illustrating then
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Figure 16, the present embodiment provides a kind of systems of the radio frequency inductive element based on silicon-on-insulator substrate
Preparation Method, the radio frequency inductive element can be applied to one or both of balun circuit, wave filter, oscillator and tuner
More than, the preparation method includes step：
As shown in Fig. 1~Figure 10, step 1) is carried out first, prepares silicon-on-insulator substrate, the silicon-on-insulator substrate
Including bottom silicon, insulating layer and the top layer silicon stacked gradually, the lower part of the insulating layer is in corresponding to preparing radio frequency inductive element
Position have at least up to the bottom silicon groove.
As shown in Fig. 1~Fig. 2, step 1-1 is carried out first), the first silicon substrate 101 is provided, in first silicon substrate 101
Surface forms the first insulating layer 102.
As an example, silicon dioxide layer is formed in 101 surface of the first silicon substrate using thermal oxidation technology, as first
Insulating layer 102, in the present embodiment, it is dry method thermal oxidation technology that the thermal oxidation technology, which is selected, and the temperature range of oxidation is 900
~1200 DEG C, specific select is 1000 DEG C.
As an example, the thickness of first insulating layer 102 is 20 to hundreds of nanometers, the thickness of first insulating layer 102
Degree can be determined according to the temperature and time of thermal oxidation technology.In the present embodiment, the thickness of first insulating layer 102 is
20nm.First insulating layer 102 can protect the surface of silicon not to be damaged during subsequent H or He ion implantings.
, can be as needed after ion implanting, the first insulating layer 102 is suitably thinned to 0 to hundreds of nanometers.
As shown in figure 3, then carry out step 1-2), based on first insulating layer 102 to first silicon substrate 101 into
Row stripping ion implanting, interface is removed defined in the silicon substrate.
As an example, the stripping ion is H ions, ion implanting parameter is depending on required injection depth.Certainly, exist
In other embodiments, He ions can also be selected to be injected as stripping ion, however it is not limited to example recited herein.
As an example, the stripping ion is 20~2000nm in the injection depth of first silicon substrate 101, in this reality
It applies in example, the stripping ion is 50~100nm in the injection depth of first silicon substrate 101.
As shown in Fig. 4~Fig. 5, step 1-3 is then carried out), the second silicon substrate 201 is provided, in second silicon substrate 201
Surface forms second insulating layer 202.
As an example, silicon dioxide layer is formed in 201 surface of the second silicon substrate using thermal oxidation technology, as second
Insulating layer 202, in the present embodiment, it is dry method thermal oxidation technology that the thermal oxidation technology, which is selected, and the temperature range of oxidation is 900
~1200 DEG C, specific select is 1000 DEG C.
As an example, the thickness of the second insulating layer 202 is not less than 50nm, the thickness of the second insulating layer 202
It can be determined according to the temperature and time of thermal oxidation technology.In the present embodiment, the thickness of the second insulating layer 202 is
50nm。
Then step 1-4 is carried out), mask layer is formed, and in corresponding to radio frequency inductive in 202 surface of second insulating layer
The position of element forms etching window.
As an example, the mask layer can be photoresist, silicon nitride or combination.
As described in Figure 6, step 1-5 is then carried out), the second insulating layer 202 is etched based on etching window, formation runs through
To the groove 203 of second silicon substrate 201.
It, specifically, can be with as an example, in the present embodiment, the groove 203 is through to second silicon substrate 201
RIE or ICP dry etchings method is selected to etch the second insulating layer 202.In addition, after the completion of etching, further include to the second silicon
The step of substrate 201 is cleaned.
As shown in fig. 7, then carrying out step 1-6), predetermined depth is etched in the second silicon substrate 201 in groove 203
Empty slot 204.
As an example, the etching depth according to needed for different radio frequency inductance element, with reference to step 1-5) first time photoetching, into
Row one arrives multiple alignment, further etches the empty slot 204 of corresponding depth in second silicon substrate 201 in groove 203.In addition,
If required etching depth is zero, then the step 1-6 can be saved).
As shown in Fig. 8~Fig. 9, step 7) is then carried out, is bonded first insulating layer 102 and the second insulating layer
202。
As an example, the step cleaned to 101 and second silicon substrate 201 of the first silicon substrate is further included before bonding
Suddenly.
As shown in Figure 10, step 1-8 is then carried out), carrying out annealing process makes first silicon substrate 101 from stripping interface
Place's stripping, with silicon top layer of the part that first insulating layer 102 is combined as silicon-on-insulator substrate.
As an example, the atmosphere of annealing process is N2Atmosphere.
As an example, the temperature range of annealing process be 400~500 DEG C so that first silicon substrate 101 from stripping circle
It is removed at face, in the present embodiment, it is 450 DEG C that the temperature of the annealing process, which is selected,.
Then, step 1-9 is carried out), (1000~1200 DEG C) annealing of high temperature are carried out, to strengthen first insulating layer 102
And the bond strength of the second insulating layer 202.
Finally, the top layer silicon face is polished using CMP process, obtains the top layer silicon of smooth finish surface.
As shown in figure 11, step 2) is then carried out, device is defined in the corresponding position with the groove by mask lithography
Region 301, and the top layer silicon in removal devices region 301 is etched, expose the upper face of the lower section insulating layer.
As shown in Figure 12~Figure 16, step 3) is finally carried out, radio frequency inductive is prepared in device area 301 based on CMOS technology
Element.
As an example, step 3) includes：
As shown in figure 12, step 3-1 is carried out first), make lower metal electrode 302 in the device area 301.
Specifically, then deposited metal first etches the metal layer and forms patterned metal, as lower metal electrode
302.The material of the lower metal electrode 302 can be gold, copper, aluminium etc..
As shown in figure 13, step 3-2 is then carried out), form medium mesa structure 303 in the device area 301.
As an example, the material of the medium mesa structure 303 is silica.
As shown in figure 14, step 3-3 is then carried out), etch electrode through-hole 304 in the medium mesa structure 303.
Specifically, the medium table top knot is etched using photo etching process, is formed until the lower metal electrode 302
Electrode through-hole 304.
As shown in Figure 15~16, step 3-4 is finally carried out), make inductance coil in 303 surface of medium mesa structure
305, and realize the electric connection with lower metal electrode 302 by the electrode through-hole 304.
Specifically, including step：
Step 3-4-1), using the methods of such as plating, chemical plating in the electrode through-hole 304 filling conductive metal；
Step 3-4-2), in the 303 surface deposition inductance metal layer of medium mesa structure；
Step 3-4-3), the inductance metal layer is etched, forms inductance coil 305, the inductance coil 305 is by described
Electrode through-hole 304 realizes the electric connection with lower metal electrode 302.
As shown in Figure 15~Figure 16, the present embodiment also provides a kind of radio frequency inductive element based on silicon-on-insulator substrate,
The radio frequency inductive element can be applied to one or more of balun circuit, wave filter, oscillator and tuner, institute
Radio frequency inductive element is stated to include：Silicon-on-insulator substrate, the bottom silicon that the silicon-on-insulator substrate includes stacking gradually is (on i.e.
The second silicon substrate 201 stated), insulating layer (the first i.e. above-mentioned insulating layer 102 and second insulating layer 202) and top layer silicon be (on i.e.
The first silicon substrate 101 stated), the lower part (i.e. above-mentioned second insulating layer 202) of the insulating layer is in corresponding to preparing radio frequency electrical
The position of sensing unit has the groove 203 at least up to the bottom silicon；Device area 301, the device area 301 eliminate
Top layer silicon corresponding with the position of the groove 203 exposes top (the first i.e. above-mentioned insulating layer 102) table of underlying insulating layer
Face；And radio frequency inductive element, it is formed in the device area 301.
As an example, the insulating layer is silicon dioxide layer, the thickness of the lower part of the insulating layer is not less than 50nm.
As an example, the thickness range of the top layer silicon is 20~2000nm.
As an example, the radio frequency inductive element includes：Lower metal electrode 302 is formed in 301 table of device area
Face；Medium mesa structure 303 is formed in 301 surface of device area；Electrode through-hole 304 is formed in the medium table top knot
In structure 303；Inductance coil 305 is formed on the medium mesa structure 303, and is realized by the electrode through-hole 304 and institute
State the electric connection of lower metal electrode 302.
As described above, radio frequency inductive element based on silicon-on-insulator substrate and preparation method thereof of the present invention, have with
Lower advantageous effect：The present invention is based on patterned silicon-on-insulator substrates, etch to have obtained with substrate cavity by the later stage
Inductance element.The device architecture can effectively inhibit inductor loss caused by silicon substrate, and reduce parasitic capacitance, be conducive to improve
The Q values and its resonant frequency of inductance component.In addition, the cavity structure additionally provides good radiating condition.The electricity of the present invention
Sensing unit is as a kind of base components, suitable for numerous integrated RF devices comprising inductor module, such as balun circuit, filtering
Device, oscillator, tuner etc..So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (16)
- A kind of 1. preparation method of the radio frequency inductive element based on silicon-on-insulator substrate, which is characterized in that the preparation method Including step：Step 1), prepare silicon-on-insulator substrate, the silicon-on-insulator substrate include stack gradually bottom silicon, insulating layer and Top layer silicon, the lower part of the insulating layer have in corresponding to the position for preparing radio frequency inductive element at least up to the bottom silicon Groove；Step 2) defines device area, and etch removal devices region by mask lithography in the corresponding position with the groove Top layer silicon, expose the upper face of the lower section insulating layer；Step 3) prepares radio frequency inductive element based on CMOS technology in device area.
- 2. the preparation method of the radio frequency inductive element according to claim 1 based on silicon-on-insulator substrate, feature exist In：In step 1), there is the empty slot of predetermined depth in the bottom silicon in the groove.
- 3. the preparation method of the radio frequency inductive element according to claim 1 based on silicon-on-insulator substrate, feature exist In step 1) prepares silicon-on-insulator substrate and includes：Step 1-1), the first silicon substrate is provided, the first insulating layer is formed in first surface of silicon；Step 1-2), stripping ion implanting is carried out to first silicon substrate based on first insulating layer, in the silicon substrate Defined in remove interface；Step 1-3), the second silicon substrate is provided, second insulating layer is formed in second surface of silicon；Step 1-4), mask layer is formed, and formed in the position corresponding to radio frequency inductive element in the second insulating layer surface Etching window；Step 1-5), the second insulating layer is etched based on etching window, forms the groove for being through to second silicon substrate；Step 1-6), the empty slot of predetermined depth is etched in the second silicon substrate in groove；Step 1-7), it is bonded first insulating layer and the second insulating layer；Step 1-8), carrying out annealing process makes first silicon substrate from the stripping of stripping interface, with the first insulating layer knot Silicon top layer of the part of conjunction as silicon-on-insulator substrate；Step 1-9), high annealing is carried out, to strengthen the bond strength of first insulating layer and the second insulating layer.
- 4. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：Step 1-1) in, silicon dioxide layer is formed in first surface of silicon using thermal oxidation technology, as the first insulation Layer；Step 1-3) in, silicon dioxide layer is formed in second surface of silicon using thermal oxidation technology, as the second insulation Layer.
- 5. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：The thickness of the second insulating layer is not less than 50nm.
- 6. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：Step 1-2) in, the stripping ion is H ions or He ions, and the stripping ion is in the injection of first silicon substrate Depth is 20~2000nm.
- 7. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：Step 1-7) the step of being cleaned to first silicon substrate and the second silicon substrate is further included before bonding.
- 8. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：Step 1-8) in, the atmosphere of annealing process is N2Atmosphere, the temperature range of annealing process is 400~500 DEG C, so that described First silicon substrate is removed from stripping interface.
- 9. the preparation method of the radio frequency inductive element according to claim 3 based on silicon-on-insulator substrate, feature exist In：Step 1-8) in, further include the step of CMP planarization is carried out to the top layer silicon face.
- 10. the preparation method of the radio frequency inductive element according to claim 1 based on silicon-on-insulator substrate, feature exist In：Step 3) includes：Step 3-1), make lower metal electrode in the device area；Step 3-2), form medium mesa structure in the device area；Step 3-3), etch electrode through-hole in the medium mesa structure；Step 3-4), inductance coil is made, and realize and lower gold by the electrode through-hole in the medium mesa surfaces Belong to the electric connection of electrode.
- 11. the preparation method of the radio frequency inductive element according to claim 1 based on silicon-on-insulator substrate, feature exist In：The radio frequency inductive element is applied to one or more of balun circuit, wave filter, oscillator and tuner.
- 12. a kind of radio frequency inductive element based on silicon-on-insulator substrate, which is characterized in that including：Silicon-on-insulator substrate, the silicon-on-insulator substrate includes the bottom silicon, insulating layer and the top layer silicon that stack gradually, described The lower part of insulating layer in corresponding to prepare radio frequency inductive element position have at least up to the bottom silicon groove；Device area, the device area eliminate top layer silicon corresponding with the position of the groove, expose underlying insulating layer Upper face；Radio frequency inductive element is formed in the device area.
- 13. the radio frequency inductive element according to claim 12 based on silicon-on-insulator substrate, it is characterised in that：It is described exhausted Edge layer is silicon dioxide layer, and the thickness of the lower part of the insulating layer is not less than 50nm.
- 14. the radio frequency inductive element according to claim 12 based on silicon-on-insulator substrate, it is characterised in that：The top The thickness range of layer silicon is 20~2000nm.
- 15. the radio frequency inductive element according to claim 12 based on silicon-on-insulator substrate, it is characterised in that：It is described to penetrate Frequency inductance element includes：Lower metal electrode is formed in the device area surface；Medium mesa structure is formed in the device area surface；Electrode through-hole is formed in the medium mesa structure；Inductance coil is formed on the medium mesa structure, and is realized and the lower metal electrode by the electrode through-hole Electric connection.
- 16. the radio frequency inductive element according to claim 12 based on silicon-on-insulator substrate, it is characterised in that：It is described to penetrate Frequency inductance element is applied to one or more of balun circuit, wave filter, oscillator and tuner.
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| CN203179874U (en) * | 2013-04-07 | 2013-09-04 | 江阴长电先进封装有限公司 | Wafer level high Q value silicon-based inductor structure |
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