CN105788532A - Active matrix organic light emitting diode (AMOLED) pixel circuit and driving method - Google Patents
Active matrix organic light emitting diode (AMOLED) pixel circuit and driving method Download PDFInfo
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- CN105788532A CN105788532A CN201610174160.7A CN201610174160A CN105788532A CN 105788532 A CN105788532 A CN 105788532A CN 201610174160 A CN201610174160 A CN 201610174160A CN 105788532 A CN105788532 A CN 105788532A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
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Abstract
The invention discloses an active matrix organic light emitting diode (AMOLED) pixel circuit and a driving method. The circuit comprises a first switch transistor T1, a second switch transistor T2, a driving transistor T3, an organic light emitting diode OLED, a data line Vdata, a first scanning control line Vscan1, a second scanning control line Vscan2, a storage capacitor Cst, and a programming/erasing signal line Vpe. The driving method comprises stages of threshold voltage resetting, threshold voltage compensation, driving voltage writing and light emitting. The AMOLED pixel circuit has the advantages of simple structure and operation, small size, high aperture ratio, low power consumption and the like, and can be applied to high-resolution and large-size flat panel display.
Description
Technical field
The present invention relates to a kind of active matrix organic light-emitting diode (Active-MatrixOrganicLightEmittingDiode, AMOLED) image element circuit and driving method thereof, belong to technical field of flat panel display.
Background technology
Flat pannel display (FlatPanelDisplay, FPD) is widely used in each electronic product such as TV, computer, panel computer and smart mobile phone, has very important effect in electronics and information industry.As the emerging representative of flat pannel display, AMOLED show have from main light emission, visual angle width, bright in luster, contrast is high, operating temperature range width (still can work at subzero 40 DEG C) and be suitable to the advantages such as Flexible Displays, the development in recent years impetus is swift and violent.
Image element circuit is the elementary cell constituting flat pannel display, one typical AMOLED pixel circuit is by two thin film transistor (TFT) (2T, T represents Transistor), one storage electric capacity (1C, C represent Capacitor) and Organic Light Emitting Diode OLED constitute, in 2T1C structure.Wherein, a transistor is as switching tube, for controlling the path that storage electric capacity is charged by data wire；Another one transistor, then as driving pipe, provides for OLED and drives electric current, and by driving bright-dark degree's (GTG) of the size adjustment OLED of electric current；Storage electric capacity is then mainly used in maintaining in OLED glow phase being applied to the driving voltage Vdrive driving tube grid.But in actual applications, no matter it is what type of thin film transistor (TFT), being applied to stress effect (Bias-InducedStress, BIS) produced by the voltage bias on thin film transistor (TFT) inevitably causes the threshold voltage of thin film transistor (TFT) to drift about.Owing to threshold voltage is the key parameter determining transistor output current, the driving electric current (and then the GTG to OLED) driving pipe will be produced to have a strong impact on by threshold voltage shift.Therefore often require that time actually used that image element circuit possesses its function driving the threshold voltage shift of pipe to compensate, to improve the stability shown.Currently, an image element circuit possessing threshold voltage compensation function typically include the transistor of more than 4 and the electric capacity of more than 2, and need to be equipped with numerous control line and data wire just can carry out threshold voltage compensation.Therefore the image element circuit of prior art have that size is big, aperture opening ratio is low, power consumption is high, the structurally and operationally shortcoming such as complicated, limit its application in high-resolution, large scale flat pannel display.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides one structurally and operationally simple (in 3T1C structure), size is little, aperture opening ratio is high, low in energy consumption active matrix organic light-emitting diode image element circuit and driving method thereof, can effectively solve the exhibit stabilization problem driving the threshold voltage shift of pipe to cause in AMOLED pixel circuit.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of active matrix organic light-emitting diode image element circuit, including the first switch transistors pipe T1, second switch transistor T2, drive pipe T3, Organic Light Emitting Diode OLED, data wire Vdata, the first scan control line Vscan1, the second scan control line Vscan2, storage electric capacity Cst, program/erase holding wire Vpe, wherein:
Described first switch transistors pipe T1 includes the first switch transistors pipe drain electrode, the first switch transistors tube grid and the first switch transistors pipe source electrode, described first switch transistors pipe drain electrode is connected with data wire Vdata, first switch transistors tube grid and the first scan control line Vscan1 are connected, and the first switch transistors pipe source electrode is connected with the A end of storage electric capacity Cst.
Described second switch transistor T2 includes second switch transistor drain, second switch transistor gate and second switch transistor source, described second switch transistor drain is connected with the anode of Organic Light Emitting Diode OLED, second switch transistor gate and the second scan control line Vscan2 are connected, and second switch transistor source connects ground wire Vss.
Described driving pipe T3 has electric charge storage and keeps the charge type nonvolatile semiconductor memory member of function.Described driving pipe T3 includes driving tube grid, driving pipe drain electrode and drive pipe source electrode, described driving tube grid is connected with the A end of storage electric capacity Cst, drive pipe drain electrode to be connected with power line Vdd, drive pipe source electrode to be connected with the anode of Organic Light Emitting Diode OLED.
The described B end of storage electric capacity Cst and the negative electrode of Organic Light Emitting Diode OLED are connected with ground wire Vss respectively.
The driving method of a kind of active matrix organic light-emitting diode image element circuit, comprises the following steps:
(1) threshold voltage reset phase: the first scan control line Vscan1 is set to high level, the second scan control line Vscan2 is set to high level, and power line Vdd is set to low level, and the voltage on data wire Vdata is set to wipe voltage Ve.Utilizing tunneling mechanism that driving pipe T3 is carried out wipe operation makes its threshold voltage diminish.
(2) the threshold voltage compensation stage: the first scan control line Vscan1 and the second scan control line Vscan2 is maintained high level, and power line Vdd becomes high level, and the voltage on data wire Vdata is set to program voltage Vp.Utilizing channel hot electron injection mechanism that driving pipe T3 is programmed operation makes its threshold voltage become big, completes the threshold voltage compensation of driving pipe T3.
(3) driving voltage write phase: the first scan control line Vscan1 and the second scan control line Vscan2 maintains high level, voltage on data wire Vdata is set to driving voltage Vdrive, is written to, by the first switch transistors pipe T1, the driving tube grid driving pipe T3 and remains to next frame renewal by storing electric capacity Cst.
(4) glow phase: the first scan control line Vscan1 and the second scan control line Vscan2 becomes low level, and the driving voltage Vdrive that storage electric capacity Cst keeps is supplied to the driving tube grid driving pipe T3, drives Organic Light Emitting Diode OLED.
Preferred: described utilize tunneling mechanism to drive pipe T3 carry out wipe operation make its threshold voltage diminish method: utilize F-N tunneling mechanism or illumination auxiliary F-N tunneling mechanism, make electronics return to channel layer from the accumulation layer driving pipe T3, and/or hole is injected from the channel layer driving pipe T3 and stores accumulation layer.
Preferred: described to utilize channel hot electron to inject mechanism to driving pipe T3 to be programmed operating to make its threshold voltage to become big method: to utilize channel hot electron to inject mechanism, make electronics inject from the channel layer driving pipe T3 and store accumulation layer to make the threshold voltage driving pipe T3 increasing, when driving when driving tube grid and the voltage driven between pipe source electrode equal with the threshold voltage driving pipe T3 of pipe T3, the duty driving pipe T3 is become cut-off state from saturation, channel hot electron disappears, and then injected the process stopping of electronics to accumulation layer by channel layer, number of electrons in accumulation layer is not further added by.
Beneficial effect: a kind of active matrix organic light-emitting diode image element circuit provided by the invention and driving method, compared to existing technology, has the advantages that
(1) compared with AMOLED pixel circuit in prior art, the AMOLED pixel circuit that the present invention proposes make use of the feature driving pipe self to possess threshold voltage adjustments function, effectively reduce the number of the device count in image element circuit and control line and data wire, simplify image element circuit structure, there is structurally and operationally simple, size is little, aperture opening ratio is high, low in energy consumption advantage.
(2) component number that the AMOLED pixel circuit that the present invention proposes comprises is few, simple in construction, contributes to reducing the manufacture difficulty of product, improving finished product rate and reduce product cost.
Accompanying drawing explanation
Fig. 1 is a kind of AMOLED pixel circuit schematic diagram that the present invention proposes；
Fig. 2 is the signal timing diagram of AMOLED pixel circuit of the present invention；
Fig. 3 is the structural representation driving pipe in AMOLED pixel circuit of the present invention.
Wherein, the first switch transistors pipe T1, second switch transistor T2, drive pipe T3, storage electric capacity Cst, Organic Light Emitting Diode OLED, first scan control line Vscan1, the second scan control line Vscan2, data wire Vdata, power line Vdd, ground wire Vss, driving voltage Vdrive, wiping voltage Ve, program voltage Vp, 10 is substrate, and 11 for driving tube grid, 12 is channel layer, and 13 for driving pipe source electrode, and 14 for driving pipe drain electrode, 21 is barrier layer, and 22 is accumulation layer, and 23 is tunnel layer.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, it is further elucidated with the present invention, it should be understood that these examples are merely to illustrate the present invention rather than restriction the scope of the present invention, after having read the present invention, the amendment of the various equivalent form of values of the present invention is all fallen within the application claims limited range by those skilled in the art.
A kind of active matrix organic light-emitting diode image element circuit, as shown in Figure 1, including the first switch transistors pipe T1, second switch transistor T2, drive pipe T3, Organic Light Emitting Diode OLED, data wire Vdata, the first scan control line Vscan1, the second scan control line Vscan2, storage electric capacity Cst, program/erase holding wire Vpe, wherein:
First switch transistors pipe T1 is as switching tube, and the voltage on the first scan control line Vscan1 is written to the path of first grid and storage to the storage electric capacity Cst driving pipe T3.Including the first switch transistors pipe drain electrode, the first switch transistors tube grid and the first switch transistors pipe source electrode, described first switch transistors pipe drain electrode is connected with data wire Vdata, first switch transistors tube grid and the first scan control line Vscan1 are connected, and the first switch transistors pipe source electrode is connected with the A end of storage electric capacity Cst.
Described second switch transistor T2 is as switching tube, for for driving pipe T3 to provide by the power line Vdd path to ground wire Vss at reset phase and threshold voltage compensation stage, and making the anode of Organic Light Emitting Diode OLED and negative electrode at reset phase and threshold voltage compensation stage short circuit, it is prevented that Organic Light Emitting Diode OLED is in the luminescence by mistake of the two stage.Including second switch transistor drain, second switch transistor gate and second switch transistor source, described second switch transistor drain is connected with the anode of Organic Light Emitting Diode OLED, second switch transistor gate and the second scan control line Vscan2 are connected, and second switch transistor source connects ground wire Vss.
Pipe T3 is driven to have electric charge storage and keep the charge type nonvolatile semiconductor memory member of function.Drive pipe T3 to drive electric current for providing for Organic Light Emitting Diode OLED, control the GTG of Organic Light Emitting Diode OLED, and compensate for the threshold voltage shift realized driving pipe T3 self.As shown in Figure 3, described driving pipe T3 includes the channel layer 12, tunnel layer 23, accumulation layer 22, barrier layer 21 and the substrate 10 that set gradually from top to bottom, described barrier layer 21 one side relative with substrate 10 is concave panel, tube grid 11 is driven to be arranged in the spill on barrier layer 21, and drive pipe drain electrode 14 and drive pipe source electrode 13 to be relatively arranged on the both sides of channel layer 12, described driving tube grid 11 is connected with the A end of storage electric capacity Cst, drive pipe drain electrode 14 to be connected with power line Vdd, drive pipe source electrode 13 to be connected with the anode of Organic Light Emitting Diode OLED.
The described B end of storage electric capacity Cst and the negative electrode of Organic Light Emitting Diode OLED are connected with ground wire Vss respectively.
A kind of driving method of active matrix organic light-emitting diode image element circuit, as in figure 2 it is shown, comprise the following steps:
(1) threshold voltage reset phase: the first scan control line Vscan1 is set to high level, the second scan control line Vscan2 is set to high level, and power line Vdd is set to low level, and the voltage on data wire Vdata is set to wipe voltage Ve.Utilizing tunneling mechanism that driving pipe T3 is carried out wipe operation makes its threshold voltage diminish.Concrete, utilize Fowler-Nordheim (F-N) tunneling mechanism or illumination auxiliary F-N tunneling mechanism etc., electronics returns to channel layer 12 from the accumulation layer 22 driving pipe T3, and/or hole is injected from the channel layer 12 driving pipe T3 and stores accumulation layer 22 (being called wiping operation).Along with the carrying out wiping operation, the number of electrons in accumulation layer 22 is fewer and feweri and/or hole number more and more, and then causes that the threshold voltage driving pipe T3 is more and more less.
This stage is mainly used in resetting the electric charge driven in pipe T3 accumulation layer 22, prepares for the follow-up threshold voltage compensation that carries out.In this stage, it is more deep to wipe the degree that carries out of operation, then to carry out threshold voltage compensation scope more wide for image element circuit, but can cause that the time of cost is elongated, and operating rate is more slow.Therefore can determine to wipe the degree of depth that operation carries out according to concrete application.
(2) the threshold voltage compensation stage: the first scan control line Vscan1 and the second scan control line Vscan2 is maintained high level, and power line Vdd becomes high level, and the voltage on data wire Vdata is set to program voltage Vp.Utilizing channel hot electron injection mechanism that driving pipe T3 is programmed operation makes its threshold voltage become big, completes the threshold voltage compensation of driving pipe T3.Concrete: utilizing channel hot electron (ChannelHotElectron, CHE) to inject mechanism, electronics injects from the channel layer 12 driving pipe T3 and stores accumulation layer 22 (being referred to as programming operation).Carrying out along with programming operation, number of electrons in accumulation layer gets more and more, and then cause that the threshold voltage driving pipe T3 is increasing, when driving when driving tube grid 11 and the voltage driven between pipe source electrode 13 equal with the threshold voltage driving pipe T3 of pipe T3, the duty driving pipe T3 is become cut-off state from saturation, CHE disappears, and then the process being injected electronics to accumulation layer 22 by channel layer 12 stops, and the number of electrons in accumulation layer 22 is not further added by.
The threshold voltage that this stage achieves driving pipe T3 compensates, and solves the problem driving pipe T3 threshold voltage shift.In order to compensatory michanism is described, being located at and driving the accumulation layer 22 of pipe T3 drives pipe T3 initial threshold voltage when not storing electric charge is Vth0, owing to the threshold voltage caused such as BIS is Vth1 after work a period of time.As Vth1 > Vth0 time, compared with the situation of Vth0, inject and the charge number that stores in accumulation layer 22 will reduce in this stage, and then cause that the threshold voltage increase amount that caused by the electric charge in accumulation layer 22 reduces；When Vth1 < during Vth0, compared with the situation of Vth0, injects and the charge number that stores in accumulation layer 22 increases in this stage, and then it is big to cause that the threshold voltage caused by the electric charge in accumulation layer 22 increases quantitative change.Therefore by regulating the electric charge driven in pipe T3 accumulation layer 22, threshold voltage total for pipe T3 is driven can to maintain a stationary value, thus realizing valve value compensation.
(3) driving voltage write phase: the first scan control line Vscan1 and the second scan control line Vscan2 maintains high level, voltage on data wire Vdata is set to driving voltage Vdrive, is written to, by the first switch transistors pipe T1, the grid driving pipe T3 and remains to next frame renewal by storing electric capacity Cst.
(4) glow phase: the first scan control line Vscan1 and the second scan control line Vscan2 becomes low level, and the driving voltage Vdrive that storage electric capacity Cst keeps is supplied to the driving tube grid 11 driving pipe T3, drives Organic Light Emitting Diode OLED.
The above is only the preferred embodiment of the present invention; it is noted that, for those skilled in the art; under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (6)
1. an active matrix organic light-emitting diode image element circuit, it is characterized in that: include the first switch transistors pipe T1, second switch transistor T2, drive pipe T3, Organic Light Emitting Diode OLED, data wire Vdata, the first scan control line Vscan1, the second scan control line Vscan2, storage electric capacity Cst, program/erase holding wire Vpe, wherein:
Described first switch transistors pipe T1 includes the first switch transistors pipe drain electrode, the first switch transistors tube grid and the first switch transistors pipe source electrode, described first switch transistors pipe drain electrode is connected with data wire Vdata, first switch transistors tube grid and the first scan control line Vscan1 are connected, and the first switch transistors pipe source electrode is connected with the A end of storage electric capacity Cst；
Described second switch transistor T2 includes second switch transistor drain, second switch transistor gate and second switch transistor source, described second switch transistor drain is connected with the anode of Organic Light Emitting Diode OLED, second switch transistor gate and the second scan control line Vscan2 are connected, and second switch transistor source connects ground wire Vss；
Described driving pipe T3 has electric charge storage and keeps the charge type nonvolatile semiconductor memory member of function；Described driving pipe T3 includes driving tube grid, driving pipe drain electrode and drive pipe source electrode, described driving tube grid is connected with the A end of storage electric capacity Cst, drive pipe drain electrode to be connected with power line Vdd, drive pipe source electrode to be connected with the anode of Organic Light Emitting Diode OLED；
The described B end of storage electric capacity Cst and the negative electrode of Organic Light Emitting Diode OLED are connected with ground wire Vss respectively.
2. active matrix organic light-emitting diode image element circuit according to claim 1 and 2, it is characterized in that: described driving pipe T3 includes the channel layer (12) set gradually from top to bottom, tunnel layer (23), accumulation layer (22), barrier layer (21) and substrate (10), described barrier layer (21) one side relative with substrate (10) is concave panel, tube grid (11) is driven to be arranged in the spill of barrier layer (21), and drive pipe drain electrode (14) and drive pipe source electrode (13) to be relatively arranged on the both sides of channel layer (12).
3. the driving method based on the active matrix organic light-emitting diode image element circuit described in claim 1 or 2, it is characterised in that comprise the following steps:
(1) threshold voltage reset phase: the first scan control line Vscan1 is set to high level, the second scan control line Vscan2 is set to high level, and power line Vdd is set to low level, and the voltage on data wire Vdata is set to wipe voltage Ve；Utilizing tunneling mechanism that driving pipe T3 is carried out wipe operation makes its threshold voltage diminish；
(2) the threshold voltage compensation stage: the first scan control line Vscan1 and the second scan control line Vscan2 is maintained high level, and power line Vdd becomes high level, and the voltage on data wire Vdata is set to program voltage Vp；Utilizing channel hot electron injection mechanism that driving pipe T3 is programmed operation makes its threshold voltage become big, completes the threshold voltage compensation of driving pipe T3；
(3) driving voltage write phase: the first scan control line Vscan1 and the second scan control line Vscan2 maintains high level, voltage on data wire Vdata is set to driving voltage Vdrive, is written to, by the first switch transistors pipe T1, the driving tube grid driving pipe T3 and remains to next frame renewal by storing electric capacity Cst；
(4) glow phase: the first scan control line Vscan1 and the second scan control line Vscan2 becomes low level, and the driving voltage Vdrive that storage electric capacity Cst keeps is supplied to the driving tube grid driving pipe T3, drives Organic Light Emitting Diode OLED.
4. the driving method of active matrix organic light-emitting diode image element circuit according to claim 3, it is characterized in that: described utilize tunneling mechanism to driving pipe T3 to carry out wiping the method that operation makes its threshold voltage diminish: utilize tunneling mechanism to make electronics return to channel layer from the accumulation layer driving pipe T3, and/or hole is injected from the channel layer driving pipe T3 and stores accumulation layer.
5. the driving method of active matrix organic light-emitting diode image element circuit according to claim 4, it is characterised in that: described tunneling mechanism is F-N tunneling mechanism or illumination auxiliary F-N tunneling mechanism.
6. the driving method of active matrix organic light-emitting diode image element circuit according to claim 3, it is characterized in that: described utilize channel hot electron to inject mechanism to driving pipe T3 to be programmed operating to make its threshold voltage to become big method: utilize channel hot electron to inject mechanism, make electronics inject from the channel layer driving pipe T3 and store accumulation layer to make the threshold voltage driving pipe T3 increasing, when driving when driving tube grid and the voltage driven between pipe source electrode equal with the threshold voltage driving pipe T3 of pipe T3, the duty driving pipe T3 is become cut-off state from saturation, channel hot electron disappears, and then injected the process stopping of electronics to accumulation layer by channel layer, number of electrons in accumulation layer is not further added by.
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| CN111243503B (en) * | 2018-11-29 | 2023-02-28 | 成都辰显光电有限公司 | Pixel circuit, display device and driving method of pixel circuit |
| CN113257194A (en) * | 2021-03-26 | 2021-08-13 | 东南大学 | Active matrix organic light emitting diode pixel compensation circuit and driving method thereof |
| CN113299235A (en) * | 2021-05-20 | 2021-08-24 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
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