CN105785266A - Serial semiconductor switch short-circuit fault indicating circuit - Google Patents
Serial semiconductor switch short-circuit fault indicating circuit Download PDFInfo
- Publication number
- CN105785266A CN105785266A CN201610380354.2A CN201610380354A CN105785266A CN 105785266 A CN105785266 A CN 105785266A CN 201610380354 A CN201610380354 A CN 201610380354A CN 105785266 A CN105785266 A CN 105785266A
- Authority
- CN
- China
- Prior art keywords
- resistance
- switch
- emitting diode
- voltage
- igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a serial semiconductor switch short-circuit fault indicating circuit. The circuit comprises a plurality of IGBT switches connected into a whole in series. The two ends of each IGBT switch are connected with a static equalizing resistor in parallel. The static equalizing resistor on each IGBT switch comprises an equalizing resistor and an auxiliary equalizing resistor which are connected in series, wherein the two ends of the auxiliary equalizing resistor are connected with a light emitting diode in parallel, the voltage across the two ends of the auxiliary equalizing resistor is not smaller than the forward tube voltage drop of the light emitting diode, the resistance value of the equalizing resistor is larger than that of the auxiliary equalizing resistor, and the current on the light emitting diode is not larger than the current difference between the equalizing resistor and the auxiliary equalizing resistor. Whether a short-circuit fault happens to each IGBT in a serial switch module or not can be judged through a visual method just by adding one resistor and one light emitting diode, the circuit is simple and reliable, circuit detachment and extra power supply are not needed, and a faulty device can be maintained and replaced quickly and conveniently on site.
Description
Technical field
The present invention relates to technical field of pulse power, be specifically related to the indicator light circuit of a kind of serial semiconductor switch breaker in middle short trouble, can not the problem of fault location in time during for solving that switches at different levels are short-circuited in serial semiconductor switch.
Background technology
Pulse Power Techniques are the science discharged rapidly within the extremely short time by the energy stored in relatively long time.Currently, Pulse Power Techniques are all widely applied in fields such as national defence scientific research project, research in new high-tech and civilian industries very much.In the device producing high power pulse, switch is one of most important parts, and it plays a part to connect energy-storage units and load unit.Due to semiconductor switch turn-on and turn-off process rely on carrier transfer, mechanical contact, therefore have can turn off, Gao Zhongying, in advantages such as pressure operated within range voltage range width, be widely used in pulse power device in recent years.MOSFET (metal oxide semiconductor field effect tube, Metal-Oxide-SemiconductortypeFieldEffectTransistor) and IGBT (insulated gate bipolar transistor, InsulatedGateBipolarTransistors) be main force's semiconductor switch device of modern fast pulse technical development.Along with the development of Power Electronic Technique, its running voltage and operating current are more and more higher, end 2016, the maximum pressure 1.2kV that is about of single MOSFET, and single IGBT is maximum pressure is about 6.5kV.
In the output application of tens of to up to a hundred kilovolts such high-voltage pulse, single semiconductor switch only pressure far from meeting demand, it is therefore necessary to carried out series connection and use, form tandem tap module.When some switch series connection use, it is possible to bear than single voltage that only switch is higher, but must assure that in tandem tap module that the voltage that every switch ends is born is of substantially equal.Therefore, widely used method is at the equal static voltage sharing of every switch ends parallel connection resistance, the resistance of resistance is much larger than the equivalent internal resistance of switch, and so the voltage of every switch ends is substantially equal to the dividing potential drop at static voltage sharing two ends, it is ensured that every switch ends voltage is of substantially equal.
But, when real work, due to load end reflect, loop stray parameter, or switch conduction and turn off the reasons such as the moment is inconsistent and all can cause switch that " overvoltage " occur and punch through damage, and be usually expressed as " short circuit " state.The damage if a certain switch in tandem tap is short-circuited, this switch shows as low impedance path state, be likely to whole tandem tap module still can normal operation, but remaining switch to bear the voltage higher than design load, very easily in succession occurs over-voltage breakdown to damage.
For being switched the application scenario formed by single IGBT, it is possible to judge whether IGBT is short-circuited fault easily by multiple testing circuit.But in IGBT serial module structure, it is suspended in high potential work owing to every one-level IGBT is substantially, and current potential is each variant.Such as, in the high-voltage pulse application of output 150kV, if adopting 100 switch series connection, then every switch suspended voltage is from 0kV, 1.5kV, 3.0kV ..., it is continued until 148.5kV, so must have 100 groups mutually isolated, and above earth potential can reach the power supply of corresponding isolation voltage and power to testing circuits at different levels, and high-voltage isolating is powered an inherently difficult problem in tandem tap combination application.Therefore those need power supply just workable testing circuit to bring great complexity to system in tandem tap module application.For ease of maintenance with use, and avoid carrying out high pressure isolation power supply to testing circuit, it is possible to be a necessary miscellaneous function in design tandem tap module by visual method find early the to be short-circuited semiconductor switch of fault.
For IGBT, semiconductor switch, including, but not limited to MOSFET and IGBT, is set forth that summary of the invention will not be produced impact by present invention herein, is therefore hereafter all described in detail for IGBT.
The paper " failure detection of IGBT high-pressure series assembly and recovery policy " of " Xi'an University of Technology's journal " 2012 Published in China Pharmacies proposes the open fault adopting complicated logic circuit to judge IGBT, detects short-circuit condition from the present invention different.Inquired about by Patent Office of the People's Republic of China, Zhejiang University the patent applied for is " a kind of based on VCEIGBT short-circuit protection adaptive optimization unit and method "; and the patent " the protection device of power semiconductor switch element and guard method " applied for by Hitachi of Amada Co., Ltd. overcurrent protection to IGBT when being all that load short circuits is discussed, it not the short trouble of of detection IGBT itself.
Summary of the invention
It is an object of the invention to provide a kind of by visual circuit and the method directly judging to have occurred that in serial semiconductor switch module the switch of short trouble.This circuit, on the basis of the tandem tap module original static voltage sharing of every one-level, increases a resistance and a light emitting diode, by observing whether light emitting diode is illuminated to judge that this Level One semiconductor current switchs the fault that whether is short-circuited.
For achieving the above object, the present invention adopts the following technical scheme that
A kind of indicating circuit of serial semiconductor switch short trouble, including the IGBT switch that some grades of series connection are integrated, described every one-level IGBT switch ends static voltage sharing in parallel, static voltage sharing on described every one-level IGBT switch includes equalizing resistance and the auxiliary equalizing resistance of a series connection, the two ends of a described auxiliary equalizing resistance light emitting diode in parallel；
The voltage at described auxiliary equalizing resistance two ends is not less than the forward direction tube voltage drop of Light-Emitting Diode, and the resistance of equalizing resistance is more than the resistance of auxiliary equalizing resistance, and the electric current on described Light-Emitting Diode is not more than the difference between current of equalizing resistance and auxiliary equalizing resistance.
In technique scheme, the voltage value of described every one-level IGBT switch ends is equal.
In technique scheme, the resistance of equivalent internal resistance of every one-level IGBT switch more than one order of magnitude of static voltage sharing resistance value.
In technique scheme, the resistance of described equalizing resistance is much larger than the resistance of auxiliary equalizing resistance, and the resistance of described auxiliary equalizing resistance is not more than the resistance of 0.1 times of equalizing resistance.
A kind of fault judgment method of the indicating circuit of serial semiconductor switch short trouble, when applying relatively low voltage in series IGBT switch terminals, guarantee that voltage makes the light emitting diode of now every one-level switch to be lit, observe all of light emitting diode, if some light emitting diode is not lit, then can determine that this one-level corresponding IGBT switch there occurs short trouble.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows: by visual method, the present invention only need to increase a resistance and light emitting diode can judge in tandem tap module whether IGBT at different levels are short-circuited fault, circuit is simple and reliable, without dismantling circuit, without extra power supply, it is simple to rapid-maintenance and change defective device at the scene.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
The tandem tap modular circuit schematic diagram that Fig. 1 is made up of IGBT semiconductor switch and static voltage sharing；
Fig. 2 is that the present invention is to the improvement circuit theory diagrams of certain primary unit in tandem tap module.
Detailed description of the invention
The colelctor electrode of tandem tap module every one-level IGBT switch and an emitter-base bandgap grading static voltage sharing generally in parallel；Static voltage sharing is replaced with " main equalizing resistance " and " auxiliary equalizing resistance " two resistant series by the present invention, and at the light emitting diode (LED) of the two ends of an auxiliary equalizing resistance high brightness in parallel.The resistance of main equalizing resistance assists equalizing resistance much larger than another, and such series resistance still possesses the function of static voltage sharing.When applying certain test voltage at tandem tap module two ends, every one-level IGBT all bears corresponding dividing potential drop, if IGBT function is normal, then LED can be lit；The fault if certain IGBT is short-circuited, then the voltage at its two ends is substantially zeroed, and LED will not be lit, and namely can determine that this one-level IGBT of its correspondence has occurred that short trouble.
Fig. 1 is the schematic diagram of semiconductor switch serial module structure.Tandem tap module is made up of n level, be respectively numbered 1,2,3 ..., n.Every one-level is an elementary cell, as shown in dashed rectangle.Elementary cell is formed by triggering circuit Vi, semiconductor switch Qi and static voltage sharing Ri, and wherein i is the numbering of i-stage unit.The equivalent internal resistance of semiconductor switch is determined by the ratio of its running voltage with leakage current, is generally tens of to up to a hundred M Ω.Partial pressure value for realizing IGBT two ends at different levels is of substantially equal, the little order of magnitude of the general comparable equivalent internal resistance of static voltage sharing, and the partial pressure value at such IGBT two ends is just mainly determined by static voltage sharing.The static voltage sharing of unit at different levels selects identical resistance, it is ensured that the partial pressure value of IGBT at different levels is essentially identical, it is prevented that unbalanced-voltage-division is even causes some IGBT over-voltage breakdown.
Fig. 2 be the present invention to the improvement circuit theory diagrams of certain primary unit in tandem tap module, in tandem tap module, the improved method of other each unit is with this is identical.
The fault if switch Q is not short-circuited, is gradually increased certain voltage at its two ends and observes.If the voltage at switch Q two ends is UQ, resistance RbThe voltage at two ends is UD, LED conducting luminous time forward direction tube voltage drop be UF, work as UD< UFTime, light emitting diode does not work, it is possible to LED is regarded as open-circuit condition, now meets formula (1).
Along with UQIncrease, UDAlso increasing, U is worked asD≥UFAfter, light emitting diode is lit, and the voltage at two ends is clamped at UFAnd it is held essentially constant.
If the switch of a certain unit or certain what unit there occurs short trouble in serial semiconductor switch, the switch equivalent resistance broken down essentially 0, the voltage at two ends essentially 0, will not change with the voltage at serial semiconductor switch module two ends.Therefore, the LED of corresponding unit will not be lit.
Therefore, it is judged that the method for the switch of the fault that is short-circuited is: apply relatively low voltage at serial semiconductor switch module two ends, it is ensured that now the LED of normal cell can be lit.Observe all of LED, if some LED is not lit, then can determine that the semiconductor switch that these unit are corresponding there occurs short trouble.
The choosing method of every grade of unit component parameter is as follows: apply test voltage U at n level serial semiconductor switch module two endsM, and Ux not can exceed that the maximum pressure of single only switch, in case stopping loss bad switch.If certain one-level switch is normal, then its voltage got is at least UM/n.When meeting formula (2), i.e. resistance RbThe voltage at two ends is be more than or equal to LED forward direction tube voltage drop UFTime, the LED of normal condition unit just can be lit.
If it is IF that eyes are able to observe that LED luminescence needs to flow through the minimum current of LED, then it must is fulfilled for formula (3).
Due to needs Rb< < Ra, engineering can be chosen by formula (4).
Rb≤0.1Ra……………………………………………(4)
When meeting formula (2), (3), (4) simultaneously, the LED of normal cell can be lit, and the LED of IGBT short-circuit unit will not be lit.
Illustrate: the characteristic according to semiconductor switch, if design selects the resistance of static voltage sharing to be about 2M Ω, due to Rb< < RaThen it is believed that Ra=2M Ω；The voltage U that if serial semiconductor switch module has n=8 level, two ends applyM=1000V；The forward voltage drop U of LEDs ONF=1.6V, can be observed luminescence minimum current IF=40 μ A；Then can calculate 71k Ω≤R according to formula (2), (3), (4)b≤200kΩ.In the process of design circuit, parameters can be considered, so as to meet above-mentioned condition.
The invention is not limited in aforesaid detailed description of the invention.The present invention expands to any new feature disclosed in this manual or any new combination, and the step of the arbitrary new method disclosed or process or any new combination.
Claims (5)
1. the indicating circuit of a serial semiconductor switch short trouble, including the IGBT switch that some grades of series connection are integrated, described every one-level IGBT switch ends static voltage sharing in parallel, it is characterized in that the static voltage sharing on described every one-level IGBT switch includes equalizing resistance and the auxiliary equalizing resistance of a series connection, the two ends of a described auxiliary equalizing resistance light emitting diode in parallel；
The voltage at described auxiliary equalizing resistance two ends is not less than the forward direction tube voltage drop of Light-Emitting Diode, and the resistance of equalizing resistance is more than the resistance of auxiliary equalizing resistance, and the electric current on described Light-Emitting Diode is not more than the difference between current of equalizing resistance and auxiliary equalizing resistance.
2. the indicating circuit of a kind of serial semiconductor switch short trouble according to claim 1, it is characterised in that the voltage value of described every one-level IGBT switch ends is equal.
3. the indicating circuit of a kind of serial semiconductor switch short trouble according to claim 2, it is characterised in that the resistance of the equivalent internal resistance of every one-level IGBT switch is more than one order of magnitude of static voltage sharing resistance value.
4. the indicating circuit of a kind of serial semiconductor switch short trouble according to claim 3, the resistance of described equalizing resistance is much larger than the resistance of auxiliary equalizing resistance, and the resistance of described auxiliary equalizing resistance is not more than the resistance of 0.1 times of equalizing resistance.
5. the fault judgment method according to the indicating circuit of the arbitrary described a kind of serial semiconductor switch short trouble of Claims 1 to 4, it is characterized in that for: when applying relatively low voltage in series IGBT switch terminals, guarantee that voltage makes the light emitting diode of now every one-level switch to be lit, observe all of light emitting diode, if some light emitting diode is not lit, then can determine that this one-level corresponding IGBT switch there occurs short trouble.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610380354.2A CN105785266A (en) | 2016-05-31 | 2016-05-31 | Serial semiconductor switch short-circuit fault indicating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610380354.2A CN105785266A (en) | 2016-05-31 | 2016-05-31 | Serial semiconductor switch short-circuit fault indicating circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105785266A true CN105785266A (en) | 2016-07-20 |
Family
ID=56375498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610380354.2A Pending CN105785266A (en) | 2016-05-31 | 2016-05-31 | Serial semiconductor switch short-circuit fault indicating circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105785266A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107592103A (en) * | 2017-09-20 | 2018-01-16 | 全球能源互联网研究院 | A kind of Microsecond grade electronic switching device |
| KR20200077182A (en) * | 2018-12-20 | 2020-06-30 | 주식회사 만도 | Apparatus for detecting a failure of a power device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202145223U (en) * | 2011-06-14 | 2012-02-15 | 镇江电研华源电力技术有限公司 | Electric device working state indicating circuit |
| CN103715874A (en) * | 2012-10-09 | 2014-04-09 | 富士电机株式会社 | Gate driving circuit having a fault detecting circuit for a semiconductor switching device |
| CN105223499A (en) * | 2015-11-18 | 2016-01-06 | 中国西电电气股份有限公司 | The test method that flexible DC power transmission engineering voltage source converter valve IGBT excess current turns off |
| CN205844481U (en) * | 2016-05-31 | 2016-12-28 | 中国工程物理研究院流体物理研究所 | A kind of indicating circuit of serial semiconductor switch short trouble |
-
2016
- 2016-05-31 CN CN201610380354.2A patent/CN105785266A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202145223U (en) * | 2011-06-14 | 2012-02-15 | 镇江电研华源电力技术有限公司 | Electric device working state indicating circuit |
| CN103715874A (en) * | 2012-10-09 | 2014-04-09 | 富士电机株式会社 | Gate driving circuit having a fault detecting circuit for a semiconductor switching device |
| CN105223499A (en) * | 2015-11-18 | 2016-01-06 | 中国西电电气股份有限公司 | The test method that flexible DC power transmission engineering voltage source converter valve IGBT excess current turns off |
| CN205844481U (en) * | 2016-05-31 | 2016-12-28 | 中国工程物理研究院流体物理研究所 | A kind of indicating circuit of serial semiconductor switch short trouble |
Non-Patent Citations (2)
| Title |
|---|
| 余琳等: "绝缘栅双极晶体管串联关键技术", 《强激光与粒子束》 * |
| 李雷等: "基于IGBT的短路试验开关的仿真研究", 《电气技术》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107592103A (en) * | 2017-09-20 | 2018-01-16 | 全球能源互联网研究院 | A kind of Microsecond grade electronic switching device |
| CN107592103B (en) * | 2017-09-20 | 2024-01-16 | 全球能源互联网研究院 | Microsecond electronic switching device |
| KR20200077182A (en) * | 2018-12-20 | 2020-06-30 | 주식회사 만도 | Apparatus for detecting a failure of a power device |
| KR102624556B1 (en) * | 2018-12-20 | 2024-01-12 | 에이치엘만도 주식회사 | Apparatus for detecting a failure of a power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104764988B (en) | The failure testing circuit and failure measuring method of a kind of power device | |
| CN101854075B (en) | Arc extinguishing hybrid switch and switching method | |
| AU2013376519B2 (en) | Apparatus for limiting current of circuit or breaking current, and control method thereof | |
| CN108701987B (en) | Error current limiter and method thereof | |
| US9178348B2 (en) | DC voltage line circuit breaker | |
| CN107431428A (en) | The control of voltage source converter | |
| CN205844481U (en) | A kind of indicating circuit of serial semiconductor switch short trouble | |
| CN102608445A (en) | Testing of a transient voltage protection device | |
| CN101247695A (en) | Filament open-circuit protector for constant-current light modulation system of air station navigation light | |
| CN202206134U (en) | Light emitting diode (LED) over-voltage and open-circuit protection device | |
| CN105785266A (en) | Serial semiconductor switch short-circuit fault indicating circuit | |
| CN108140502A (en) | Electromechanical release unit | |
| CN105811369A (en) | Bypass protection device for high-voltage DC circuit breaker and protection method thereof | |
| CN115776106A (en) | Direct current distribution and protection system | |
| US20170047733A1 (en) | Protection device for an electrical power system | |
| CN209046525U (en) | A kind of MARX generator | |
| US8228645B2 (en) | Systems and methods for protecting a series capacitor bank | |
| CN206619906U (en) | A kind of dc circuit breaker | |
| EP3355456A1 (en) | A protection arrangement for an mmc-hvdc sub-module | |
| CN104410059B (en) | Discharge gap arc extinguishing method of intrinsically safe inductive circuit | |
| US9705312B2 (en) | Circuit breaking arrangement | |
| CN107394767B (en) | Bypass quick protection circuit for direct current circuit breaker | |
| CN102088248A (en) | Intrinsically safe power supply with high output power | |
| CN205213128U (en) | LED drive circuit's protection circuit and LED drive circuit | |
| CN112260248A (en) | Overvoltage protection circuit and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160720 |
|
| RJ01 | Rejection of invention patent application after publication |