CN105762919A - Charging system based on photovoltaic performance - Google Patents
Charging system based on photovoltaic performance Download PDFInfo
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- CN105762919A CN105762919A CN201610257567.6A CN201610257567A CN105762919A CN 105762919 A CN105762919 A CN 105762919A CN 201610257567 A CN201610257567 A CN 201610257567A CN 105762919 A CN105762919 A CN 105762919A
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- 238000004146 energy storage Methods 0.000 claims abstract description 53
- 238000007599 discharging Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 273
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- 238000000034 method Methods 0.000 claims description 7
- 230000007812 deficiency Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000013082 photovoltaic technology Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000004891 communication Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
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- H02J3/383—
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
- H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
- H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/70—Hybrid systems, e.g. uninterruptible or back-up power supplies integrating renewable energies
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Business, Economics & Management (AREA)
- Emergency Management (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention relates to the photovoltaic technology field and provides a charging system based on photovoltaic performance. The system comprises an electric supply input unit. An output terminal of the electric supply input unit is connected to an input terminal of a rectification inversion unit. An output terminal of the rectification inversion unit is connected to a direct current bus unit. An input terminal of a DC/DC conversion unit is connected to the direct current bus unit. An output terminal of the DC/DC conversion unit is connected to an input terminal of a load interface unit. An output terminal of a photovoltaic power supply unit is connected to a direct current bus. Charging and discharging terminals of an energy storage unit are connected to the direct current bus unit respectively. A processor unit is connected to the electric supply input unit, the rectification inversion unit, the direct current bus unit, the DC/DC conversion unit, the photovoltaic power supply unit, the energy storage unit and the load interface unit respectively so as to carry out communication. By using the charging system, energy cleaning is realized; dependence on a power grid is reduced and even eliminated; power conversion is simplified and losses are reduced.
Description
Technical field
The invention belongs to field of photovoltaic technology, particularly relate to a kind of charging system based on photovoltaic.
Background technology
The activities of the mankind all be unable to do without the energy, petering out and high pollution along with traditional energy, and green novel energy source is by the developing direction of the energy after being, it is not only continuable, and cleans.Therefore new forms of energy are constantly subject to national policy and give special assistance in recent years, wherein just comprise photovoltaic generation and automobile charging pile.
The charging pile early stage of development just someone can imagine with photovoltaic generation to charging electric vehicle, but realize method in fact very simple, it it is exactly the simple superposition of two cover systems, namely photovoltaic DC-to-AC converter is followed by charging pile, but shortcoming is also apparent from: cost is high, and system conversion efficiency is low, and floor space is big, photovoltaic provides the energy unstable, and two set monitoring cannot be mated etc..
Summary of the invention
It is an object of the invention to provide a kind of charging system based on photovoltaic, it is intended to solve above-mentioned technical problem.
nullThe present invention is realized in，A kind of charging system based on photovoltaic，This charging system includes civil power input block、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units、Processor unit and loading interfaces unit，The outfan of described civil power input block connects the input of described commutation inversion unit，The outfan of described commutation inversion unit connects described dc bus unit，The input of described DC/DC converter unit connects described dc bus unit，The outfan of described DC/DC converter unit connects the input of described loading interfaces unit，The outfan of described photovoltaic power supply unit connects described dc bus，The charge-discharge end of described energy-storage units connects described dc bus unit respectively，Described processor unit connects civil power input block respectively、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units and loading interfaces unit communicate.
nullThe further technical scheme of the present invention is: described processor unit monitors whether described loading interfaces unit has load to be charged、Whether the electric energy of photovoltaic power supply unit continues in power supply、Whether electric energy storage completely or continues energy storage to energy-storage units，When there being load to be charged，Described processor unit controls to adopt photovoltaic power supply unit to be charged，When photovoltaic power supply deficiency processor unit control energy-storage units carry out discharging compensation photovoltaic power supply reach charge requirement load is continued charging or individually energy-storage units discharge load charged，When photovoltaic power supply is powered all not enough with energy-storage units, processor unit controls commutation inversion unit and carries out rectification and process and the AC rectification of utility grid becomes direct current carry out supplementing photovoltaic power supply and energy-storage units equal deficiency of powering reaches charge requirement and continues to be charged or directly utilize utility grid load is charged to load；When non-loaded being charged, described processor unit controls photovoltaic power supply unit and energy-storage units is carried out energy storage charging, charging full in energy-storage units energy storage or need not energy storage charge, it is that AC regeneration utility grid is powered by the DC inversion of photovoltaic power supply that described processor unit control commutation inversion unit carries out inversion process.
nullThe further technical scheme of the present invention is: described commutation inversion unit includes resistance R2261、Resistance R2262、Resistance R2135、Insulated gate bipolar transistor (IGBT) Q324、Resistance R2280、Resistance R2279、Resistance R2136、Insulated gate bipolar transistor Q325、Resistance R2272、Resistance R2271、Resistance 2131、Insulated gate bipolar transistor Q323、Resistance R2138、Resistance R2264、Resistance 2263、Insulated gate bipolar transistor Q327、Resistance R2260、Resistance R2259、Resistance R2137、Insulated gate bipolar transistor Q326、Resistance R2270、Resistance R2269、Resistance R2140、Insulated gate bipolar transistor Q322、Resistance R2276、Resistance R2275、Resistance R490、Metal-oxide-semiconductor Q330、Resistance R491、Resistance R2274、Resistance R2273、Metal-oxide-semiconductor Q329、Resistance R2286、Resistance R2285、Resistance R2130、Metal-oxide-semiconductor Q335、Resistance R2134、Resistance R2284、Resistance R2283、Metal-oxide-semiconductor Q334、Resistance R2278、Resistance R2277、Resistance R2139、Metal-oxide-semiconductor Q328、Resistance R2132、Resistance R2281、Resistance R2282、Metal-oxide-semiconductor Q332、Electric capacity C2065、Electric capacity C2059、Electric capacity C557、Electric capacity C2066、Electric capacity C2063、Electric capacity C2060、Electric capacity C556 and electric capacity C2064，Described resistance R2262 is connected the grid of described resistance R2135 one end and insulated gate bipolar transistor Q324 respectively with the one end after described resistance R2261 parallel connection，The other end of described resistance R2135 connects the source electrode of described insulated gate bipolar transistor Q324 respectively、The drain electrode of insulated gate bipolar transistor Q327 and the drain electrode of metal-oxide-semiconductor Q330，The grid of described insulated gate bipolar transistor Q327 connect respectively one end of described resistance R2138 and described resistance R2264 in parallel with described resistance R2263 after one end，The other end of described resistance R2138 connects the source electrode of described insulated gate bipolar transistor Q327；Described resistance R2280 is connected one end of described resistance R2136 and the grid of insulated gate bipolar transistor Q325 respectively with the one end after described resistance R2279 parallel connection, the source electrode of described insulated gate bipolar transistor Q325 connects the other end of described resistance R2136 respectively, the drain electrode of insulated gate bipolar transistor Q326 and the drain electrode of metal-oxide-semiconductor Q328, the grid of described insulated gate bipolar transistor Q326 connect respectively one end of described resistance R2137 and described resistance R2260 in parallel with described resistance 2259 after one end, the other end of described resistance R2137 connects the source electrode of described insulated gate bipolar transistor Q326；Described resistance R2272 is connected one end of described resistance R2131 and the grid of insulated gate bipolar transistor Q323 respectively with the one end after described resistance R2271 parallel connection, the source electrode of described insulated gate bipolar transistor Q323 connects the other end of described resistance R2131 respectively, the drain electrode of insulated gate bipolar transistor Q322 and the drain electrode of metal-oxide-semiconductor Q335, the grid of described insulated gate bipolar transistor Q322 connect respectively one end of described resistance R2140 and described resistance R2270 in parallel with described resistance 2269 after one end, the other end of described resistance R2140 connects the source electrode of described insulated gate bipolar transistor Q322；The grid of described metal-oxide-semiconductor Q330 connect respectively one end of described resistance R490 and described resistance R2276 in parallel with described resistance 2275 after one end, the source electrode of described metal-oxide-semiconductor Q330 connects the source electrode of the other end of described resistance R490, one end of resistance R491 and metal-oxide-semiconductor Q329 respectively, the grid of described metal-oxide-semiconductor Q329 connect respectively the other end of described resistance R491 and described resistance R2274 in parallel with described resistance R2278 after one end；The grid of described metal-oxide-semiconductor Q335 connect respectively one end of described resistance R21300 and described resistance R2286 in parallel with described resistance 2285 after one end, the source electrode of described metal-oxide-semiconductor Q335 connects the source electrode of the other end of described resistance R2130, one end of resistance R2134 and metal-oxide-semiconductor Q334 respectively, the grid of described metal-oxide-semiconductor Q334 connect respectively the other end of described resistance R2134 and described resistance R2284 in parallel with described resistance R2288 after one end；The grid of described metal-oxide-semiconductor Q328 connect respectively one end of described resistance R2139 and described resistance R2277 in parallel with described resistance 2278 after one end, the source electrode of described metal-oxide-semiconductor Q328 connects the source electrode of the other end of described resistance R2139, one end of resistance R2132 and metal-oxide-semiconductor Q332 respectively, the grid of described metal-oxide-semiconductor Q332 connect respectively the other end of described resistance R2132 and described resistance R2282 in parallel with described resistance R2281 after one end；nullDescribed electric capacity C2065、Electric capacity C2059、One end after electric capacity C557 and electric capacity C2066 parallel connection connects the drain electrode of described metal-oxide-semiconductor Q332 respectively、The drain electrode of metal-oxide-semiconductor Q334、The drain electrode of metal-oxide-semiconductor Q329 and described electric capacity C2063、Electric capacity C2060、One end after electric capacity C556 and electric capacity C2064 parallel connection，Described electric capacity C2065、Electric capacity C2059、The other end after electric capacity C557 and electric capacity C2066 parallel connection connects the source electrode of described insulated gate bipolar transistor Q322 respectively、The source electrode of insulated gate bipolar transistor Q326 and the source electrode of insulated gate bipolar transistor Q327，Described electric capacity C2063、Electric capacity C2060、The other end after electric capacity C556 and electric capacity C2064 parallel connection connects the source electrode of described insulated gate bipolar transistor Q323 respectively、The source electrode of insulated gate bipolar transistor Q325 and the source electrode of insulated gate bipolar transistor Q324.
The further technical scheme of the present invention is: described photovoltaic power supply unit includes photovoltaic cell panel and booster converter, and the outfan of described photovoltaic battery panel connects the input of described booster converter.
nullThe further technical scheme of the present invention is: described booster converter includes electric capacity C2310、Electric capacity C2311、Electric fuse F109、Electric fuse F110、Electric capacity C2269、Electric capacity C2270、Resistance R2540、Resistance R2541、Resistance R2539、Resistance R2538、Resistance RD112、Resistance RD113、Resistance R2266、Resistance R2265、Resistance R2268、Resistance R2267、Resistance R2133、Resistance R2141、Metal-oxide-semiconductor Q331、Metal-oxide-semiconductor Q333、Resistance R2151、Resistance R2150、Resistance R2148、Resistance R2149、Electric capacity C2104、Diode D647、Diode D648、Electric capacity C2115、Electric capacity C2116、Electric capacity C2117、Electric capacity C2118、Diode D650、Diode D649、Resistance R2153、Resistance R2152、Resistance R2146、Resistance R2147、Inductance L2189 and inductance L2190，One end of described electric capacity C2310 connects one end and the input voltage PV+ of described electric fuse F109 respectively，The other end of described electric fuse F109 connects one end of described electric capacity C2269 respectively、One end of resistance R2538 and one end of resistance RD112，The other end of described resistance RD112 connects one end of described inductance L2189，The other end of described inductance L2189 connects the drain electrode of described metal-oxide-semiconductor Q331 respectively、Anode tap after diode D647 is in parallel with diode D648 and resistance R2151 in parallel with resistance R2150 after one end，Described resistance R2151 be connected with the other end after resistance R2150 parallel connection described resistance R2149 in parallel with described resistance R2148 after one end，Described resistance R2149 is connected one end of described electric capacity C2104 with the other end after described resistance R2148 parallel connection，The other end of described electric capacity C2104、Cathode terminal after diode D647 is in parallel with diode D648、One end of electric capacity C2115 and one end of electric capacity C2116 and with together with output+，The other end of described resistance R2538 connects one end of described resistance R2539，The grid of described metal-oxide-semiconductor connect respectively one end of described resistance R2141 and described resistance R2266 in parallel with resistance R2265 after one end，One end of described electric capacity C2311 connects one end and the input voltage PV-of described electric fuse F110 respectively，The other end of described electric fuse F110 connects one end of described electric capacity C2270 respectively、One end of resistance R2540 and one end of resistance RD113，The other end of described resistance RD113 connects one end of described resistance R2133 respectively、The source electrode of metal-oxide-semiconductor Q333、One end after resistance R2153 is in parallel with resistance 2152 and diode D650 in parallel with diode D649 after cathode terminal，Described resistance R2153 be connected with the other end after resistance 2152 parallel connection described resistance R2147 in parallel with described resistance R2146 after one end，Described resistance R2147 is connected one end of described electric capacity C2103 with the other end after described resistance R2146 parallel connection，The other end of described electric capacity C2103、Anode tap after diode D650 is in parallel with diode D649、One end of electric capacity C2117 and one end of electric capacity C2118 and with together with output-，The other end of described resistance R2540 connects one end of described resistance 2541，The grid of described metal-oxide-semiconductor Q333 connect respectively one end of described resistance R2133 and resistance R2268 in parallel with resistance R22667 after one end，The other end of described electric capacity C2311 and the equal ground connection PGND of the other end of electric capacity C2310，The other end of described electric capacity C2269、The other end of electric capacity 2270D、The other end of resistance R2541、The other end of resistance R2539、The other end of resistance R2141、The source electrode of metal-oxide-semiconductor Q331、The drain electrode of metal-oxide-semiconductor Q333、The other end of electric capacity C2115、The other end of electric capacity C2116、The other end of electric capacity C2117 and the equal ground connection of the other end of electric capacity C2118.
The further technical scheme of the present invention is: described DC/DC converter unit includes three Level Full Bridge chopper circuits, transformator and current rectifying and wave filtering circuit, the outfan of described three Level Full Bridge chopper circuits connects the input of described transformator, and the outfan of described transformator connects the outfan of described current rectifying and wave filtering circuit.
nullThe further technical scheme of the present invention is: described three Level Full Bridge chopper circuits include resistance RD107、Resistance RD109、Resistance R1488、Resistance R1487、Resistance R1490、Resistance R1489、Resistance R16、Resistance R9、Electric capacity C37、Electric capacity C22、Metal-oxide-semiconductor Q121、Metal-oxide-semiconductor Q122、Diode D16、Resistance R13、Resistance R14、Electric capacity C36、Electric capacity C28、Metal-oxide-semiconductor Q123、Metal-oxide-semiconductor Q124、Resistance R1479、Resistance R1480、Resistance R1482、Resistance R1481、Resistance R19、Resistance R10、Resistance R12、Resistance R5、Electric capacity C32、Electric capacity C23、Electric capacity C33、Electric capacity C25、Metal-oxide-semiconductor Q125、Metal-oxide-semiconductor Q126、Metal-oxide-semiconductor Q127、Metal-oxide-semiconductor Q128、Electric capacity C109、Electric capacity C110、Inductance L221、Inductance L222、Resistance R1492、Resistance R1491、Resistance R1493、Resistance R1494、Resistance R15、Resistance R11、Resistance R18、Resistance R8、Diode D18、Electric capacity C34、Electric capacity C29、Electric capacity C35、Electric capacity C26、Resistance R1483、Resistance R1484、Resistance R20、Resistance R6、Resistance R17、Resistance R7、Resistance R1485、Resistance R1486、Diode D17、Electric capacity C31、Electric capacity C24、Electric capacity C30、Electric capacity C27、Metal-oxide-semiconductor Q133、Metal-oxide-semiconductor Q134、Metal-oxide-semiconductor Q135 and metal-oxide-semiconductor Q136，Described resistance RD107 is connected one end of described resistance R1488 respectively with the one end after described resistance RD109 parallel connection、The drain electrode of metal-oxide-semiconductor Q121、One end of electric capacity C37、The drain electrode of metal-oxide-semiconductor Q122、One end of electric capacity C22、One end of resistance R1479、The drain electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、The drain electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The other end of described resistance R1488 connects one end of described resistance R1487，The other end of described resistance R1487 connects one end of described resistance R1490 respectively、The negative electrode of diode D16、The drain electrode of metal-oxide-semiconductor Q123、One end of electric capacity C36、The drain electrode of metal-oxide-semiconductor、One end of electric capacity C28、One end of resistance R16、The source electrode of metal-oxide-semiconductor Q121、The other end of electric capacity C37、One end of resistance R9、The source electrode of metal-oxide-semiconductor Q122 and one end of electric capacity C22，The other end of described resistance R16 connects the grid of described metal-oxide-semiconductor Q121，The other end of described resistance R9 connects the grid of described metal-oxide-semiconductor Q122，The grid of described metal-oxide-semiconductor Q123 connects one end of described resistance R13，The grid of described metal-oxide-semiconductor Q124 connects one end of described resistance R14，The other end of described resistance R1490 connects one end of described resistance R1492 through described resistance R1489，The other end of described resistance R1492 connects one end of described resistance R1491，The other end of described resistance R1491 connects one end of described resistance R1494 respectively、The anode of diode D18、The drain electrode of metal-oxide-semiconductor Q131、One end of electric capacity C35、The drain electrode of metal-oxide-semiconductor 132、One end of electric capacity C26、One end of resistance R15、The source electrode of metal-oxide-semiconductor Q129、One end of electric capacity C34、One end of resistance R11、The source electrode of metal-oxide-semiconductor Q130 and one end of electric capacity C29，The other end of described resistance 1494 connects one end of described resistance R1493，The other end of described resistance R15 connects the grid of described metal-oxide-semiconductor Q129，The other end of described resistance R11 connects the grid of described metal-oxide-semiconductor Q130，The grid of described metal-oxide-semiconductor Q131 connects one end of described resistance R18，The grid of described metal-oxide-semiconductor Q132 connects one end of described resistance R8，The drain electrode of described metal-oxide-semiconductor Q129 connects the other end of described electric capacity C34 respectively、The drain electrode of metal-oxide-semiconductor Q130、The other end of electric capacity C29、The other end of resistance R13、The source electrode of metal-oxide-semiconductor Q123、The other end of electric capacity C36、The other end of resistance R14、One end of electric capacity C109、The source electrode of metal-oxide-semiconductor Q124 and the other end of electric capacity C28，The other end of described resistance R1493 connects the other end of described resistance R18 respectively、The source electrode of metal-oxide-semiconductor Q131、The other end of electric capacity C35、The other end of resistance R8、The other end of electric capacity C26、One end of resistance R1485、One end of resistance R17、The source electrode of metal-oxide-semiconductor Q135、One end of electric capacity C30、One end of resistance R7、The source electrode of metal-oxide-semiconductor Q136 and one end of electric capacity C27，The other end of described resistance R1485 connects one end of described resistance R1486，The other end of described resistance R1486 connects one end of described resistance R1483 respectively、The anode of diode D17、The drain electrode of metal-oxide-semiconductor Q135、The other end of electric capacity C30、The drain electrode of metal-oxide-semiconductor Q136、The other end of electric capacity C27、One end of electric capacity C24、The source electrode of metal-oxide-semiconductor Q134、One end of resistance R6、One end of electric capacity C31、The source electrode of metal-oxide-semiconductor Q133 and one end of resistance R20，The grid of described metal-oxide-semiconductor Q135 connects the other end of described resistance R17，The grid of described metal-oxide-semiconductor Q136 connects the other end of described resistance R7，The grid of metal-oxide-semiconductor Q133 connects the other end of described resistance R20，The grid of described metal-oxide-semiconductor Q134 connects the other end of described resistance R6，The drain electrode of described metal-oxide-semiconductor Q133 connects the other end of described electric capacity C31 respectively、The drain electrode of metal-oxide-semiconductor Q134、The other end of electric capacity C24、One end of electric capacity C110、One end of resistance R12、The source electrode of metal-oxide-semiconductor Q127、One end of electric capacity C33、One end of resistance R5、The source electrode of metal-oxide-semiconductor Q128 and one end of electric capacity C25，The grid of described metal-oxide-semiconductor Q127 connects the other end of described resistance R12，The grid of described metal-oxide-semiconductor Q128 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q127 connects the negative electrode of described diode D19 respectively、One end of resistance R1482、One end of resistance R1480、The other end of electric capacity C33、The drain electrode of metal-oxide-semiconductor Q128、The other end of electric capacity C25、One end of resistance R19、The source electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、One end of resistance R10、The source electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The grid of described metal-oxide-semiconductor Q125 connects the other end of described resistance R19，The grid of described metal-oxide-semiconductor Q126 connects the other end of described resistance R10，The other end of described resistance 1480 connects the other end of described resistance R1479，The other end of described resistance R1482 connects one end of described resistance R1484 through described resistance R1481，The other end of described resistance R1484 connects the other end of described resistance R1483，The other end of described electric capacity C109 connects one end of described inductance L221，The other end of described electric capacity C110 connects one end of described inductance L222，The anode of described diode D19、The negative electrode of diode D17、The anode of diode D16 and the equal ground connection of negative electrode of diode D18.
The further technical scheme of the present invention is: that described transformator adopts is high frequency transformer T118.
nullThe further technical scheme of the present invention is: described current rectifying and wave filtering circuit includes diode D713、Resistance R2521、Resistance R2523、Electric capacity C2112、Resistance R2520、Resistance R2514、Electric capacity C2016、Diode D714、Electric capacity C2123、Electric capacity 2124、Inductance L220、Diode D715、Diode D712、Resistance R2518、Electric capacity C2109、Electric capacity C2108、Resistance R2526、Resistance 2519、Resistance R2524、Diode D716、Diode D719、Electric capacity C2111、Electric capacity C2110、Electric capacity C2125、Electric capacity C2126、Resistance R2517、Resistance R2513、Resistance R2527、Resistance R2528、Resistance R2515、Resistance R2516、Resistance R2522、Resistance R2525、Electric capacity C2107、Electric capacity C2105、Diode D717、Diode D718、Resistance RD111、Resistance RD110、Resistance R2386、Resistance R2385、Resistance R2384、Resistance R2379、Resistance R2378、Resistance R2380、Resistance R2374、Resistance R2373、Resistance R2377、Electric capacity C2113、Electric capacity C2120、Electric capacity C2119、Electric capacity C2314、Electric capacity C2315、Electric capacity C2275、Electric capacity C2277、Electric capacity 2251、Electric capacity C2250、Common mode inductance L219、Electric capacity C2273、Electric capacity C2272、Electric capacity C2267、Resistance R2375、Resistance R2376、Resistance R2383、Resistance R2369、Resistance R2370、Resistance R2371、Resistance R2381、Resistance R2372、Resistance R2382、Electric capacity C2114、Electric capacity C2121、Electric capacity C2122、Electric capacity C2312、Electric capacity C2313、Electric capacity C2252、Electric capacity C2253、Electric capacity C2274、Electric capacity C2276、Electric capacity C2269、Electric fuse F107、Electric fuse F108、Electric capacity C2247、Electric capacity C2246、Electric capacity C2271、Electric capacity C2249 and electric capacity 2248，Output the 5th foot of described high frequency transformer T118 connects the anode of described diode D713 respectively、One end of resistance R2523、One end of resistance R2518 and the negative electrode of diode D715，Output the 6th foot of described high frequency transformer T118 connects one end of described resistance R2514 respectively、One end of resistance R2519、The anode of diode D714 and the negative electrode of diode D712，Output the 7th foot of high frequency transformer T118 connects one end of described resistance R2527 respectively、One end of resistance R2515、The anode of diode D716 and the negative electrode of diode D717，Output the 8th foot of high frequency transformer T118 connects one end of described resistance R2516 respectively、One end of resistance R2528、The anode of diode D719 and the negative electrode of diode D718，One end of described inductance L220 connects the negative electrode of described diode D713 respectively、One end of resistance R2521、One end of resistance R2520、The negative electrode of diode D714 and electric capacity C2123 in parallel with electric capacity C2124 after one end，The other end of described resistance R2521 connects the other end of described resistance R2523 through described electric capacity C2112，The other end of described resistance R2520 connects the other end of described resistance R2514 through described electric capacity C2106，Described electric capacity C2123 is connected the anode of described diode D712 respectively with the other end after electric capacity C2124 parallel connection、One end of resistance R2524、One end of resistance R2526、The anode of diode D715、The negative electrode of diode D719、One end of resistance R2513、One end of resistance R2517、The negative electrode of diode D716 and electric capacity C2125 in parallel with electric capacity C2126 after one end，The other end of described resistance R2513 connects the other end of described resistance R2528 through described electric capacity C2110，The other end of described resistance R2517 connects the other end of described resistance R2527 through described electric capacity C2111，Described electric capacity C2125 is connected the anode of diode D717 respectively with the other end after electric capacity C2126 parallel connection、One end of resistance R2522、One end of resistance R2525、The anode of diode D718 and resistance RD111 in parallel with resistance RD110 after one end，The other end of described resistance R2515 connects the other end of described resistance R2522 through described electric capacity C2107，The other end of described resistance R2516 connects the other end of described resistance R2525 through described electric capacity C2105，The other end of described inductance L220 connects one end of described resistance R2386 respectively、One end of resistance R2385、One end of resistance R2384、The positive pole of electric capacity C2113、One end of electric capacity C2120、One end of electric capacity C2119、One end of electric capacity C2273、1st foot of common mode inductance L219、One end of electric capacity C2275 and one end of electric capacity C2251，The negative pole of described electric capacity C2113 connects one end of described electric capacity C2314 respectively、One end of electric capacity C2315、One end of resistance R2374、One end of resistance R2373、One end of resistance R2377、The positive pole of electric capacity C2114、One end of electric capacity C2121、One end of electric capacity C2122、One end of resistance R2383、One end of resistance R2376 and one end of resistance R2375，Described resistance RD111 is connected one end of described resistance R2381 respectively with the other end after resistance RD110 parallel connection、One end of resistance R2372、One end of resistance R2383、The negative pole of electric capacity C2114、One end of electric capacity C2312、One end of electric capacity C2313、The other end of electric capacity C2273、One end of electric capacity C2253、One end of electric capacity C2274、2nd foot of common mode inductance L219 and ground connection AGND，The other end of electric capacity C2253 is by described electric capacity C2252 ground connection PGND，The other end of described electric capacity C2251 is through described electric capacity C2250 ground connection PGND，The other end of described electric capacity C2120 connects the other end of described electric capacity C2314，The other end of described electric capacity C2119 connects the other end of described electric capacity C2315，The other end of described resistance R2386 connects the other end of described resistance R2385 respectively、The other end of resistance R2384、One end of resistance R2379、One end of resistance R2378 and one end of resistance R2380，The other end of described resistance R2379 connects the other end of described resistance R2378 respectively、The other end of resistance R2380、The other end of resistance R2374、The other end of resistance R2373 and the other end of resistance R2377，The other end of described electric capacity C2121 connects the other end of described electric capacity C2312，The other end of described electric capacity C2122 connects the other end of described electric capacity C2313，The other end of described resistance R2375 connects the other end of described resistance R2376 respectively、The other end of resistance R2383、One end of resistance R2369、One end of resistance R2370 and one end of resistance R2371，The other end of described resistance R2369 connects the other end of described resistance R2370 respectively、The other end of resistance R2371、The other end of resistance R2381、The other end of resistance R2372 and the other end of resistance R2382，The other end ground connection PGND of described electric capacity C2274，The other end ground connection PGND of described electric capacity C2275，4th foot of described common mode inductance L219 connects one end of described electric capacity C2277 respectively、One end of electric capacity C2272、One end of electric capacity C2267、One end of electric capacity C2269、One end of electric fuse F107 and one end of electric fuse F108，3rd foot of described common mode inductance L219 connects one end of described electric capacity C2276 respectively、The other end of electric capacity C2272、The other end of electric capacity C2267、The other end of electric capacity C2269、One end of electric capacity C2249、One end of electric capacity C2271 also exports VOUT-，The other end of described electric capacity C2249 is through described electric capacity C2248 ground connection PGND，The other end of described electric fuse F107 connects the other end of described electric fuse F108 respectively、One end of electric capacity C2246、The other end of electric capacity C2271 also exports VOUT+，The other end of described electric capacity C2246 is through described electric capacity C2247 ground connection PGND，The other end ground connection PGND of described electric capacity C2277，The other end ground connection PGND of described electric capacity C2276.
The further technical scheme of the present invention is: the voltage of described dc bus is 800V.
The invention has the beneficial effects as follows: this charging system realizes clean energy, reduce and even depart from the dependence to electrical network, simplify power conversion, reduce loss；Increase photovoltaic panel, reduce manufacturing cost, reduce equipment entirety floor space, it is only necessary to the grid-connected port of an electrical network, it is not necessary to isolating transformer, it is not necessary to photovoltaic combiner box, it is possible to Centralized Monitoring two cover system state and data, simplify and safeguard；Increasing energy storage and constitute microgrid, it is possible to night charges the battery, daytime discharges, and makes full use of electricity price difference and produces economic benefits, reaches the effect of peak load shifting, and additionally battery can also serve as the effect of back-up source when civil power power-off.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of a kind of charging system based on photovoltaic that the embodiment of the present invention provides.
Fig. 2 is the electrical schematic diagram of the three Level Full Bridge chopper circuits that the embodiment of the present invention provides.
Fig. 3 is the electrical schematic diagram of the commutation inversion unit that the embodiment of the present invention provides.
Fig. 4 is the electrical schematic diagram of the booster converter that the embodiment of the present invention provides.
Fig. 5 is the electrical schematic diagram of the current rectifying and wave filtering circuit that the embodiment of the present invention provides.
Fig. 6 is the electrical schematic diagram of the dc bus unit that the embodiment of the present invention provides.
Detailed description of the invention
nullAs shown in Figure 1，A kind of charging system based on photovoltaic provided by the invention，This charging system includes civil power input block、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units、Processor unit and loading interfaces unit，The outfan of described civil power input block connects the input of described commutation inversion unit，The outfan of described commutation inversion unit connects described dc bus unit，The input of described DC/DC converter unit connects described dc bus unit，The outfan of described DC/DC converter unit connects the input of described loading interfaces unit，The outfan of described photovoltaic power supply unit connects described dc bus，The charge-discharge end of described energy-storage units connects described dc bus unit respectively，Described processor unit connects civil power input block respectively、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units and loading interfaces unit communicate.This charging system realizes clean energy, reduces and even departs from the dependence to electrical network, simplifies power conversion, reduces loss.
Described processor unit monitors whether described loading interfaces unit has load to be charged, whether the electric energy of photovoltaic power supply unit continues in power supply, whether electric energy storage completely or continues energy storage to energy-storage units, when there being load to be charged, described processor unit controls to adopt photovoltaic power supply unit to be charged, when photovoltaic power supply deficiency processor unit control energy-storage units carry out discharging compensation photovoltaic power supply reach charge requirement load is continued charging or individually energy-storage units discharge load charged, when photovoltaic power supply is powered all not enough with energy-storage units, processor unit controls commutation inversion unit and carries out rectification and process and the AC rectification of utility grid becomes direct current carry out supplementing photovoltaic power supply and energy-storage units equal deficiency of powering reaches charge requirement and continues to be charged or directly utilize utility grid load is charged to load；When non-loaded being charged, described processor unit controls photovoltaic power supply unit and energy-storage units is carried out energy storage charging, charging full in energy-storage units energy storage or need not energy storage charge, it is that AC regeneration utility grid is powered by the DC inversion of photovoltaic power supply that described processor unit control commutation inversion unit carries out inversion process.
nullDescribed commutation inversion unit includes resistance R2261、Resistance R2262、Resistance R2135、Insulated gate bipolar transistor (IGBT) Q324、Resistance R2280、Resistance R2279、Resistance R2136、Insulated gate bipolar transistor Q325、Resistance R2272、Resistance R2271、Resistance 2131、Insulated gate bipolar transistor Q323、Resistance R2138、Resistance R2264、Resistance 2263、Insulated gate bipolar transistor Q327、Resistance R2260、Resistance R2259、Resistance R2137、Insulated gate bipolar transistor Q326、Resistance R2270、Resistance R2269、Resistance R2140、Insulated gate bipolar transistor Q322、Resistance R2276、Resistance R2275、Resistance R490、Metal-oxide-semiconductor Q330、Resistance R491、Resistance R2274、Resistance R2273、Metal-oxide-semiconductor Q329、Resistance R2286、Resistance R2285、Resistance R2130、Metal-oxide-semiconductor Q335、Resistance R2134、Resistance R2284、Resistance R2283、Metal-oxide-semiconductor Q334、Resistance R2278、Resistance R2277、Resistance R2139、Metal-oxide-semiconductor Q328、Resistance R2132、Resistance R2281、Resistance R2282、Metal-oxide-semiconductor Q332、Electric capacity C2065、Electric capacity C2059、Electric capacity C557、Electric capacity C2066、Electric capacity C2063、Electric capacity C2060、Electric capacity C556 and electric capacity C2064，Described resistance R2262 is connected the grid of described resistance R2135 one end and insulated gate bipolar transistor Q324 respectively with the one end after described resistance R2261 parallel connection，The other end of described resistance R2135 connects the source electrode of described insulated gate bipolar transistor Q324 respectively、The drain electrode of insulated gate bipolar transistor Q327 and the drain electrode of metal-oxide-semiconductor Q330，The grid of described insulated gate bipolar transistor Q327 connect respectively one end of described resistance R2138 and described resistance R2264 in parallel with described resistance R2263 after one end，The other end of described resistance R2138 connects the source electrode of described insulated gate bipolar transistor Q327；Described resistance R2280 is connected one end of described resistance R2136 and the grid of insulated gate bipolar transistor Q325 respectively with the one end after described resistance R2279 parallel connection, the source electrode of described insulated gate bipolar transistor Q325 connects the other end of described resistance R2136 respectively, the drain electrode of insulated gate bipolar transistor Q326 and the drain electrode of metal-oxide-semiconductor Q328, the grid of described insulated gate bipolar transistor Q326 connect respectively one end of described resistance R2137 and described resistance R2260 in parallel with described resistance 2259 after one end, the other end of described resistance R2137 connects the source electrode of described insulated gate bipolar transistor Q326；Described resistance R2272 is connected one end of described resistance R2131 and the grid of insulated gate bipolar transistor Q323 respectively with the one end after described resistance R2271 parallel connection, the source electrode of described insulated gate bipolar transistor Q323 connects the other end of described resistance R2131 respectively, the drain electrode of insulated gate bipolar transistor Q322 and the drain electrode of metal-oxide-semiconductor Q335, the grid of described insulated gate bipolar transistor Q322 connect respectively one end of described resistance R2140 and described resistance R2270 in parallel with described resistance 2269 after one end, the other end of described resistance R2140 connects the source electrode of described insulated gate bipolar transistor Q322；The grid of described metal-oxide-semiconductor Q330 connect respectively one end of described resistance R490 and described resistance R2276 in parallel with described resistance 2275 after one end, the source electrode of described metal-oxide-semiconductor Q330 connects the source electrode of the other end of described resistance R490, one end of resistance R491 and metal-oxide-semiconductor Q329 respectively, the grid of described metal-oxide-semiconductor Q329 connect respectively the other end of described resistance R491 and described resistance R2274 in parallel with described resistance R2278 after one end；The grid of described metal-oxide-semiconductor Q335 connect respectively one end of described resistance R21300 and described resistance R2286 in parallel with described resistance 2285 after one end, the source electrode of described metal-oxide-semiconductor Q335 connects the source electrode of the other end of described resistance R2130, one end of resistance R2134 and metal-oxide-semiconductor Q334 respectively, the grid of described metal-oxide-semiconductor Q334 connect respectively the other end of described resistance R2134 and described resistance R2284 in parallel with described resistance R2288 after one end；The grid of described metal-oxide-semiconductor Q328 connect respectively one end of described resistance R2139 and described resistance R2277 in parallel with described resistance 2278 after one end, the source electrode of described metal-oxide-semiconductor Q328 connects the source electrode of the other end of described resistance R2139, one end of resistance R2132 and metal-oxide-semiconductor Q332 respectively, the grid of described metal-oxide-semiconductor Q332 connect respectively the other end of described resistance R2132 and described resistance R2282 in parallel with described resistance R2281 after one end；nullDescribed electric capacity C2065、Electric capacity C2059、One end after electric capacity C557 and electric capacity C2066 parallel connection connects the drain electrode of described metal-oxide-semiconductor Q332 respectively、The drain electrode of metal-oxide-semiconductor Q334、The drain electrode of metal-oxide-semiconductor Q329 and described electric capacity C2063、Electric capacity C2060、One end after electric capacity C556 and electric capacity C2064 parallel connection，Described electric capacity C2065、Electric capacity C2059、The other end after electric capacity C557 and electric capacity C2066 parallel connection connects the source electrode of described insulated gate bipolar transistor Q322 respectively、The source electrode of insulated gate bipolar transistor Q326 and the source electrode of insulated gate bipolar transistor Q327，Described electric capacity C2063、Electric capacity C2060、The other end after electric capacity C556 and electric capacity C2064 parallel connection connects the source electrode of described insulated gate bipolar transistor Q323 respectively、The source electrode of insulated gate bipolar transistor Q325 and the source electrode of insulated gate bipolar transistor Q324.
Described photovoltaic power supply unit includes photovoltaic cell panel and booster converter, and the outfan of described photovoltaic battery panel connects the input of described booster converter.
nullDescribed booster converter includes electric capacity C2310、Electric capacity C2311、Electric fuse F109、Electric fuse F110、Electric capacity C2269、Electric capacity C2270、Resistance R2540、Resistance R2541、Resistance R2539、Resistance R2538、Resistance RD112、Resistance RD113、Resistance R2266、Resistance R2265、Resistance R2268、Resistance R2267、Resistance R2133、Resistance R2141、Metal-oxide-semiconductor Q331、Metal-oxide-semiconductor Q333、Resistance R2151、Resistance R2150、Resistance R2148、Resistance R2149、Electric capacity C2104、Diode D647、Diode D648、Electric capacity C2115、Electric capacity C2116、Electric capacity C2117、Electric capacity C2118、Diode D650、Diode D649、Resistance R2153、Resistance R2152、Resistance R2146、Resistance R2147、Inductance L2189 and inductance L2190，One end of described electric capacity C2310 connects one end and the input voltage PV+ of described electric fuse F109 respectively，The other end of described electric fuse F109 connects one end of described electric capacity C2269 respectively、One end of resistance R2538 and one end of resistance RD112，The other end of described resistance RD112 connects one end of described inductance L2189，The other end of described inductance L2189 connects the drain electrode of described metal-oxide-semiconductor Q331 respectively、Anode tap after diode D647 is in parallel with diode D648 and resistance R2151 in parallel with resistance R2150 after one end，Described resistance R2151 be connected with the other end after resistance R2150 parallel connection described resistance R2149 in parallel with described resistance R2148 after one end，Described resistance R2149 is connected one end of described electric capacity C2104 with the other end after described resistance R2148 parallel connection，The other end of described electric capacity C2104、Cathode terminal after diode D647 is in parallel with diode D648、One end of electric capacity C2115 and one end of electric capacity C2116 and with together with output+，The other end of described resistance R2538 connects one end of described resistance R2539，The grid of described metal-oxide-semiconductor connect respectively one end of described resistance R2141 and described resistance R2266 in parallel with resistance R2265 after one end，One end of described electric capacity C2311 connects one end and the input voltage PV-of described electric fuse F110 respectively，The other end of described electric fuse F110 connects one end of described electric capacity C2270 respectively、One end of resistance R2540 and one end of resistance RD113，The other end of described resistance RD113 connects one end of described resistance R2133 respectively、The source electrode of metal-oxide-semiconductor Q333、One end after resistance R2153 is in parallel with resistance 2152 and diode D650 in parallel with diode D649 after cathode terminal，Described resistance R2153 be connected with the other end after resistance 2152 parallel connection described resistance R2147 in parallel with described resistance R2146 after one end，Described resistance R2147 is connected one end of described electric capacity C2103 with the other end after described resistance R2146 parallel connection，The other end of described electric capacity C2103、Anode tap after diode D650 is in parallel with diode D649、One end of electric capacity C2117 and one end of electric capacity C2118 and with together with output-，The other end of described resistance R2540 connects one end of described resistance 2541，The grid of described metal-oxide-semiconductor Q333 connect respectively one end of described resistance R2133 and resistance R2268 in parallel with resistance R22667 after one end，The other end of described electric capacity C2311 and the equal ground connection PGND of the other end of electric capacity C2310，The other end of described electric capacity C2269、The other end of electric capacity 2270D、The other end of resistance R2541、The other end of resistance R2539、The other end of resistance R2141、The source electrode of metal-oxide-semiconductor Q331、The drain electrode of metal-oxide-semiconductor Q333、The other end of electric capacity C2115、The other end of electric capacity C2116、The other end of electric capacity C2117 and the equal ground connection of the other end of electric capacity C2118.
Described DC/DC converter unit includes three Level Full Bridge chopper circuits, transformator and current rectifying and wave filtering circuit, the outfan of described three Level Full Bridge chopper circuits connects the input of described transformator, and the outfan of described transformator connects the outfan of described current rectifying and wave filtering circuit.
nullDescribed three Level Full Bridge chopper circuits include resistance RD107、Resistance RD109、Resistance R1488、Resistance R1487、Resistance R1490、Resistance R1489、Resistance R16、Resistance R9、Electric capacity C37、Electric capacity C22、Metal-oxide-semiconductor Q121、Metal-oxide-semiconductor Q122、Diode D16、Resistance R13、Resistance R14、Electric capacity C36、Electric capacity C28、Metal-oxide-semiconductor Q123、Metal-oxide-semiconductor Q124、Resistance R1479、Resistance R1480、Resistance R1482、Resistance R1481、Resistance R19、Resistance R10、Resistance R12、Resistance R5、Electric capacity C32、Electric capacity C23、Electric capacity C33、Electric capacity C25、Metal-oxide-semiconductor Q125、Metal-oxide-semiconductor Q126、Metal-oxide-semiconductor Q127、Metal-oxide-semiconductor Q128、Electric capacity C109、Electric capacity C110、Inductance L221、Inductance L222、Resistance R1492、Resistance R1491、Resistance R1493、Resistance R1494、Resistance R15、Resistance R11、Resistance R18、Resistance R8、Diode D18、Electric capacity C34、Electric capacity C29、Electric capacity C35、Electric capacity C26、Resistance R1483、Resistance R1484、Resistance R20、Resistance R6、Resistance R17、Resistance R7、Resistance R1485、Resistance R1486、Diode D17、Electric capacity C31、Electric capacity C24、Electric capacity C30、Electric capacity C27、Metal-oxide-semiconductor Q133、Metal-oxide-semiconductor Q134、Metal-oxide-semiconductor Q135 and metal-oxide-semiconductor Q136，Described resistance RD107 is connected one end of described resistance R1488 respectively with the one end after described resistance RD109 parallel connection、The drain electrode of metal-oxide-semiconductor Q121、One end of electric capacity C37、The drain electrode of metal-oxide-semiconductor Q122、One end of electric capacity C22、One end of resistance R1479、The drain electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、The drain electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The other end of described resistance R1488 connects one end of described resistance R1487，The other end of described resistance R1487 connects one end of described resistance R1490 respectively、The negative electrode of diode D16、The drain electrode of metal-oxide-semiconductor Q123、One end of electric capacity C36、The drain electrode of metal-oxide-semiconductor、One end of electric capacity C28、One end of resistance R16、The source electrode of metal-oxide-semiconductor Q121、The other end of electric capacity C37、One end of resistance R9、The source electrode of metal-oxide-semiconductor Q122 and one end of electric capacity C22，The other end of described resistance R16 connects the grid of described metal-oxide-semiconductor Q121，The other end of described resistance R9 connects the grid of described metal-oxide-semiconductor Q122，The grid of described metal-oxide-semiconductor Q123 connects one end of described resistance R13，The grid of described metal-oxide-semiconductor Q124 connects one end of described resistance R14，The other end of described resistance R1490 connects one end of described resistance R1492 through described resistance R1489，The other end of described resistance R1492 connects one end of described resistance R1491，The other end of described resistance R1491 connects one end of described resistance R1494 respectively、The anode of diode D18、The drain electrode of metal-oxide-semiconductor Q131、One end of electric capacity C35、The drain electrode of metal-oxide-semiconductor 132、One end of electric capacity C26、One end of resistance R15、The source electrode of metal-oxide-semiconductor Q129、One end of electric capacity C34、One end of resistance R11、The source electrode of metal-oxide-semiconductor Q130 and one end of electric capacity C29，The other end of described resistance 1494 connects one end of described resistance R1493，The other end of described resistance R15 connects the grid of described metal-oxide-semiconductor Q129，The other end of described resistance R11 connects the grid of described metal-oxide-semiconductor Q130，The grid of described metal-oxide-semiconductor Q131 connects one end of described resistance R18，The grid of described metal-oxide-semiconductor Q132 connects one end of described resistance R8，The drain electrode of described metal-oxide-semiconductor Q129 connects the other end of described electric capacity C34 respectively、The drain electrode of metal-oxide-semiconductor Q130、The other end of electric capacity C29、The other end of resistance R13、The source electrode of metal-oxide-semiconductor Q123、The other end of electric capacity C36、The other end of resistance R14、One end of electric capacity C109、The source electrode of metal-oxide-semiconductor Q124 and the other end of electric capacity C28，The other end of described resistance R1493 connects the other end of described resistance R18 respectively、The source electrode of metal-oxide-semiconductor Q131、The other end of electric capacity C35、The other end of resistance R8、The other end of electric capacity C26、One end of resistance R1485、One end of resistance R17、The source electrode of metal-oxide-semiconductor Q135、One end of electric capacity C30、One end of resistance R7、The source electrode of metal-oxide-semiconductor Q136 and one end of electric capacity C27，The other end of described resistance R1485 connects one end of described resistance R1486，The other end of described resistance R1486 connects one end of described resistance R1483 respectively、The anode of diode D17、The drain electrode of metal-oxide-semiconductor Q135、The other end of electric capacity C30、The drain electrode of metal-oxide-semiconductor Q136、The other end of electric capacity C27、One end of electric capacity C24、The source electrode of metal-oxide-semiconductor Q134、One end of resistance R6、One end of electric capacity C31、The source electrode of metal-oxide-semiconductor Q133 and one end of resistance R20，The grid of described metal-oxide-semiconductor Q135 connects the other end of described resistance R17，The grid of described metal-oxide-semiconductor Q136 connects the other end of described resistance R7，The grid of metal-oxide-semiconductor Q133 connects the other end of described resistance R20，The grid of described metal-oxide-semiconductor Q134 connects the other end of described resistance R6，The drain electrode of described metal-oxide-semiconductor Q133 connects the other end of described electric capacity C31 respectively、The drain electrode of metal-oxide-semiconductor Q134、The other end of electric capacity C24、One end of electric capacity C110、One end of resistance R12、The source electrode of metal-oxide-semiconductor Q127、One end of electric capacity C33、One end of resistance R5、The source electrode of metal-oxide-semiconductor Q128 and one end of electric capacity C25，The grid of described metal-oxide-semiconductor Q127 connects the other end of described resistance R12，The grid of described metal-oxide-semiconductor Q128 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q127 connects the negative electrode of described diode D19 respectively、One end of resistance R1482、One end of resistance R1480、The other end of electric capacity C33、The drain electrode of metal-oxide-semiconductor Q128、The other end of electric capacity C25、One end of resistance R19、The source electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、One end of resistance R10、The source electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The grid of described metal-oxide-semiconductor Q125 connects the other end of described resistance R19，The grid of described metal-oxide-semiconductor Q126 connects the other end of described resistance R10，The other end of described resistance 1480 connects the other end of described resistance R1479，The other end of described resistance R1482 connects one end of described resistance R1484 through described resistance R1481，The other end of described resistance R1484 connects the other end of described resistance R1483，The other end of described electric capacity C109 connects one end of described inductance L221，The other end of described electric capacity C110 connects one end of described inductance L222，The anode of described diode D19、The negative electrode of diode D17、The anode of diode D16 and the equal ground connection of negative electrode of diode D18.
That described transformator adopts is high frequency transformer T118.
nullDescribed current rectifying and wave filtering circuit includes diode D713、Resistance R2521、Resistance R2523、Electric capacity C2112、Resistance R2520、Resistance R2514、Electric capacity C2016、Diode D714、Electric capacity C2123、Electric capacity 2124、Inductance L220、Diode D715、Diode D712、Resistance R2518、Electric capacity C2109、Electric capacity C2108、Resistance R2526、Resistance 2519、Resistance R2524、Diode D716、Diode D719、Electric capacity C2111、Electric capacity C2110、Electric capacity C2125、Electric capacity C2126、Resistance R2517、Resistance R2513、Resistance R2527、Resistance R2528、Resistance R2515、Resistance R2516、Resistance R2522、Resistance R2525、Electric capacity C2107、Electric capacity C2105、Diode D717、Diode D718、Resistance RD111、Resistance RD110、Resistance R2386、Resistance R2385、Resistance R2384、Resistance R2379、Resistance R2378、Resistance R2380、Resistance R2374、Resistance R2373、Resistance R2377、Electric capacity C2113、Electric capacity C2120、Electric capacity C2119、Electric capacity C2314、Electric capacity C2315、Electric capacity C2275、Electric capacity C2277、Electric capacity 2251、Electric capacity C2250、Common mode inductance L219、Electric capacity C2273、Electric capacity C2272、Electric capacity C2267、Resistance R2375、Resistance R2376、Resistance R2383、Resistance R2369、Resistance R2370、Resistance R2371、Resistance R2381、Resistance R2372、Resistance R2382、Electric capacity C2114、Electric capacity C2121、Electric capacity C2122、Electric capacity C2312、Electric capacity C2313、Electric capacity C2252、Electric capacity C2253、Electric capacity C2274、Electric capacity C2276、Electric capacity C2269、Electric fuse F107、Electric fuse F108、Electric capacity C2247、Electric capacity C2246、Electric capacity C2271、Electric capacity C2249 and electric capacity 2248，Output the 5th foot of described high frequency transformer T118 connects the anode of described diode D713 respectively、One end of resistance R2523、One end of resistance R2518 and the negative electrode of diode D715，Output the 6th foot of described high frequency transformer T118 connects one end of described resistance R2514 respectively、One end of resistance R2519、The anode of diode D714 and the negative electrode of diode D712，Output the 7th foot of high frequency transformer T118 connects one end of described resistance R2527 respectively、One end of resistance R2515、The anode of diode D716 and the negative electrode of diode D717，Output the 8th foot of high frequency transformer T118 connects one end of described resistance R2516 respectively、One end of resistance R2528、The anode of diode D719 and the negative electrode of diode D718，One end of described inductance L220 connects the negative electrode of described diode D713 respectively、One end of resistance R2521、One end of resistance R2520、The negative electrode of diode D714 and electric capacity C2123 in parallel with electric capacity C2124 after one end，The other end of described resistance R2521 connects the other end of described resistance R2523 through described electric capacity C2112，The other end of described resistance R2520 connects the other end of described resistance R2514 through described electric capacity C2106，Described electric capacity C2123 is connected the anode of described diode D712 respectively with the other end after electric capacity C2124 parallel connection、One end of resistance R2524、One end of resistance R2526、The anode of diode D715、The negative electrode of diode D719、One end of resistance R2513、One end of resistance R2517、The negative electrode of diode D716 and electric capacity C2125 in parallel with electric capacity C2126 after one end，The other end of described resistance R2513 connects the other end of described resistance R2528 through described electric capacity C2110，The other end of described resistance R2517 connects the other end of described resistance R2527 through described electric capacity C2111，Described electric capacity C2125 is connected the anode of diode D717 respectively with the other end after electric capacity C2126 parallel connection、One end of resistance R2522、One end of resistance R2525、The anode of diode D718 and resistance RD111 in parallel with resistance RD110 after one end，The other end of described resistance R2515 connects the other end of described resistance R2522 through described electric capacity C2107，The other end of described resistance R2516 connects the other end of described resistance R2525 through described electric capacity C2105，The other end of described inductance L220 connects one end of described resistance R2386 respectively、One end of resistance R2385、One end of resistance R2384、The positive pole of electric capacity C2113、One end of electric capacity C2120、One end of electric capacity C2119、One end of electric capacity C2273、1st foot of common mode inductance L219、One end of electric capacity C2275 and one end of electric capacity C2251，The negative pole of described electric capacity C2113 connects one end of described electric capacity C2314 respectively、One end of electric capacity C2315、One end of resistance R2374、One end of resistance R2373、One end of resistance R2377、The positive pole of electric capacity C2114、One end of electric capacity C2121、One end of electric capacity C2122、One end of resistance R2383、One end of resistance R2376 and one end of resistance R2375，Described resistance RD111 is connected one end of described resistance R2381 respectively with the other end after resistance RD110 parallel connection、One end of resistance R2372、One end of resistance R2383、The negative pole of electric capacity C2114、One end of electric capacity C2312、One end of electric capacity C2313、The other end of electric capacity C2273、One end of electric capacity C2253、One end of electric capacity C2274、2nd foot of common mode inductance L219 and ground connection AGND，The other end of electric capacity C2253 is by described electric capacity C2252 ground connection PGND，The other end of described electric capacity C2251 is through described electric capacity C2250 ground connection PGND，The other end of described electric capacity C2120 connects the other end of described electric capacity C2314，The other end of described electric capacity C2119 connects the other end of described electric capacity C2315，The other end of described resistance R2386 connects the other end of described resistance R2385 respectively、The other end of resistance R2384、One end of resistance R2379、One end of resistance R2378 and one end of resistance R2380，The other end of described resistance R2379 connects the other end of described resistance R2378 respectively、The other end of resistance R2380、The other end of resistance R2374、The other end of resistance R2373 and the other end of resistance R2377，The other end of described electric capacity C2121 connects the other end of described electric capacity C2312，The other end of described electric capacity C2122 connects the other end of described electric capacity C2313，The other end of described resistance R2375 connects the other end of described resistance R2376 respectively、The other end of resistance R2383、One end of resistance R2369、One end of resistance R2370 and one end of resistance R2371，The other end of described resistance R2369 connects the other end of described resistance R2370 respectively、The other end of resistance R2371、The other end of resistance R2381、The other end of resistance R2372 and the other end of resistance R2382，The other end ground connection PGND of described electric capacity C2274，The other end ground connection PGND of described electric capacity C2275，4th foot of described common mode inductance L219 connects one end of described electric capacity C2277 respectively、One end of electric capacity C2272、One end of electric capacity C2267、One end of electric capacity C2269、One end of electric fuse F107 and one end of electric fuse F108，3rd foot of described common mode inductance L219 connects one end of described electric capacity C2276 respectively、The other end of electric capacity C2272、The other end of electric capacity C2267、The other end of electric capacity C2269、One end of electric capacity C2249、One end of electric capacity C2271 also exports VOUT-，The other end of described electric capacity C2249 is through described electric capacity C2248 ground connection PGND，The other end of described electric fuse F107 connects the other end of described electric fuse F108 respectively、One end of electric capacity C2246、The other end of electric capacity C2271 also exports VOUT+，The other end of described electric capacity C2246 is through described electric capacity C2247 ground connection PGND，The other end ground connection PGND of described electric capacity C2277，The other end ground connection PGND of described electric capacity C2276.
The voltage of described dc bus is 800V.
nullDescribed dc bus unit includes electric capacity C940、Electric capacity C941、Electric capacity C965、Electric capacity C963、Electric capacity C962、Electric capacity C969、Electric capacity C964、Electric capacity C968、Electric capacity C967、Electric capacity C966、Zener diode D619、、Zener diode D622、Zener diode D618 and Zener diode D621，Described Zener diode D618 is connected the positive pole of electric capacity C940 respectively with the negative electrode after described Zener diode D621 parallel connection、The positive pole of electric capacity C941 and described electric capacity C965、Electric capacity C963、One end after electric capacity C962 and electric capacity C969 parallel connection，Described Zener diode D618 be connected respectively with the anode after described Zener diode D621 parallel connection described Zener diode D619 in parallel with described Zener diode D622 after negative electrode、The positive pole of electric capacity C942、The positive pole of electric capacity C939、The negative pole of electric capacity C940、The negative pole of electric capacity C941、Electric capacity C965、Electric capacity C963、The other end after electric capacity C962 and electric capacity C969 parallel connection and described electric capacity C964、Electric capacity C968、One end after electric capacity C967 and electric capacity C966 parallel connection，Described electric capacity C964、Electric capacity C968、The negative pole of the described electric capacity C942 respectively of the other end after electric capacity C967 and electric capacity C966 parallel connection、The negative pole of electric capacity C939 and Zener diode D619 in parallel with described Zener diode D622 after anode.
A kind of charging pile, complete equipment one micro-grid system of composition.As long as photovoltaic panel and set of cells collocation are rationally, charging pile can realize off-network work completely.It is particularly suitable for remote districts, for instance the highway in mountain area, island etc., removes the laying expense of high tension cable and the construction cost of transformer station from.Along with the price reduction of cell panel and accumulator, this scheme can become more valuable.
Its core concept is to reduce power conversion number of times, because necessarily also needing to the conversion of a DC/DC after the conversion of AC to DC, so this programme is directly with 800V direct current for bus, all devices is connected on dc bus, and energy is transmitted each through dc bus and monitors.Under off-network state, whole system only has DC/DC to change, and simplifies structure, improves efficiency.
Operation principle is fairly simple, and when daylight is sufficient, photovoltaic can give charging electric vehicle, and charges to energy-storage battery.Energy-storage battery electric discharge in evening, continues to provide energy, power self-support is fully achieved self-sustaining.
Native system is commutator and photovoltaic DC-to-AC converter to be integrated in a topology, by software control, it is possible to achieve the bi-directional power flow of changer, simply it is described below: when 1, being used as commutator use, endways switching tube does not work, and is equal to a three-phase tri-level VIENNA rectifier.When 2, being used as photovoltaic DC-to-AC converter use, all switching tubes all work, and are equal to a T-shaped three-level inverter.
Moreover, whole system sets multiple-working mode, by application state control, the any switching laws between various pattern can also be realized: 1, photovoltaic charged pattern: when electric automobile accesses, photovoltaic battery panel is through boosting, converted by DC/DC, to vehicle charging, battery energy storage can be given simultaneously.2, energy storage photovoltaic associating charge mode: when photovoltaic panel is not provided that enough rechargeable energies, battery is combined to vehicle charging with photovoltaic, 3, civil power photovoltaic associating charge mode: when the batteries have been exhausted, electrical network can be combined photovoltaic after over commutation and be continued to power to automobile.4, commercial power charged pattern: when photovoltaic battery panel cisco unity malfunction, for instance night or repair and maintenance, energy storage also uses up, and electrical network can individually give charging electric vehicle.5, the reverse grid generation pattern of photovoltaic: when not having electric automobile to access, photovoltaic battery panel is after boosting, again through photovoltaic DC-to-AC converter, feeds back to electrical network.
By software and hardware combining, really while meeting demand, it is achieved that clean energy resource self-sufficient, reduce and pollute, and also stopped the vacant waste of early stage infrastructure, create maximum benefit for operator.Meanwhile, the integration of system decreases number of transitions, improves whole efficiency, reduces machine cost.It addition, integrated monitoring design, it is possible to the state of Centralized Monitoring charging pile, electrical network and photovoltaic DC-to-AC converter, simplify monitor mode.
Commutation inversion principle is as follows: when 1, being used as commutator use, endways switching tube does not work, and is equal to a three-phase tri-level VIENNA rectifier.When 2, being used as photovoltaic DC-to-AC converter use, all switching tubes all work, and are equal to a T-shaped three-level inverter.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
- null1. the charging system based on photovoltaic，It is characterized in that，This charging system includes civil power input block、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units、Processor unit and loading interfaces unit，The outfan of described civil power input block connects the input of described commutation inversion unit，The outfan of described commutation inversion unit connects described dc bus unit，The input of described DC/DC converter unit connects described dc bus unit，The outfan of described DC/DC converter unit connects the input of described loading interfaces unit，The outfan of described photovoltaic power supply unit connects described dc bus，The charge-discharge end of described energy-storage units connects described dc bus unit respectively，Described processor unit connects civil power input block respectively、Commutation inversion unit、Dc bus unit、DC/DC converter unit、Photovoltaic power supply unit、Energy-storage units and loading interfaces unit communicate.
- null2. charging system according to claim 1，It is characterized in that，Described processor unit monitors whether described loading interfaces unit has load to be charged、Whether the electric energy of photovoltaic power supply unit continues in power supply、Whether electric energy storage completely or continues energy storage to energy-storage units，When there being load to be charged，Described processor unit controls to adopt photovoltaic power supply unit to be charged，When photovoltaic power supply deficiency processor unit control energy-storage units carry out discharging compensation photovoltaic power supply reach charge requirement load is continued charging or individually energy-storage units discharge load charged，When photovoltaic power supply is powered all not enough with energy-storage units, processor unit controls commutation inversion unit and carries out rectification and process and the AC rectification of utility grid becomes direct current carry out supplementing photovoltaic power supply and energy-storage units equal deficiency of powering reaches charge requirement and continues to be charged or directly utilize utility grid load is charged to load；When non-loaded being charged, described processor unit controls photovoltaic power supply unit and energy-storage units is carried out energy storage charging, charging full in energy-storage units energy storage or need not energy storage charge, it is that AC regeneration utility grid is powered by the DC inversion of photovoltaic power supply that described processor unit control commutation inversion unit carries out inversion process.
- null3. charging system according to claim 1 and 2，It is characterized in that，Described commutation inversion unit includes resistance R2261、Resistance R2262、Resistance R2135、Insulated gate bipolar transistor (IGBT) Q324、Resistance R2280、Resistance R2279、Resistance R2136、Insulated gate bipolar transistor Q325、Resistance R2272、Resistance R2271、Resistance 2131、Insulated gate bipolar transistor Q323、Resistance R2138、Resistance R2264、Resistance 2263、Insulated gate bipolar transistor Q327、Resistance R2260、Resistance R2259、Resistance R2137、Insulated gate bipolar transistor Q326、Resistance R2270、Resistance R2269、Resistance R2140、Insulated gate bipolar transistor Q322、Resistance R2276、Resistance R2275、Resistance R490、Metal-oxide-semiconductor Q330、Resistance R491、Resistance R2274、Resistance R2273、Metal-oxide-semiconductor Q329、Resistance R2286、Resistance R2285、Resistance R2130、Metal-oxide-semiconductor Q335、Resistance R2134、Resistance R2284、Resistance R2283、Metal-oxide-semiconductor Q334、Resistance R2278、Resistance R2277、Resistance R2139、Metal-oxide-semiconductor Q328、Resistance R2132、Resistance R2281、Resistance R2282、Metal-oxide-semiconductor Q332、Electric capacity C2065、Electric capacity C2059、Electric capacity C557、Electric capacity C2066、Electric capacity C2063、Electric capacity C2060、Electric capacity C556 and electric capacity C2064，Described resistance R2262 is connected the grid of described resistance R2135 one end and insulated gate bipolar transistor Q324 respectively with the one end after described resistance R2261 parallel connection，The other end of described resistance R2135 connects the source electrode of described insulated gate bipolar transistor Q324 respectively、The drain electrode of insulated gate bipolar transistor Q327 and the drain electrode of metal-oxide-semiconductor Q330，The grid of described insulated gate bipolar transistor Q327 connect respectively one end of described resistance R2138 and described resistance R2264 in parallel with described resistance R2263 after one end，The other end of described resistance R2138 connects the source electrode of described insulated gate bipolar transistor Q327；Described resistance R2280 is connected one end of described resistance R2136 and the grid of insulated gate bipolar transistor Q325 respectively with the one end after described resistance R2279 parallel connection, the source electrode of described insulated gate bipolar transistor Q325 connects the other end of described resistance R2136 respectively, the drain electrode of insulated gate bipolar transistor Q326 and the drain electrode of metal-oxide-semiconductor Q328, the grid of described insulated gate bipolar transistor Q326 connect respectively one end of described resistance R2137 and described resistance R2260 in parallel with described resistance 2259 after one end, the other end of described resistance R2137 connects the source electrode of described insulated gate bipolar transistor Q326；Described resistance R2272 is connected one end of described resistance R2131 and the grid of insulated gate bipolar transistor Q323 respectively with the one end after described resistance R2271 parallel connection, the source electrode of described insulated gate bipolar transistor Q323 connects the other end of described resistance R2131 respectively, the drain electrode of insulated gate bipolar transistor Q322 and the drain electrode of metal-oxide-semiconductor Q335, the grid of described insulated gate bipolar transistor Q322 connect respectively one end of described resistance R2140 and described resistance R2270 in parallel with described resistance 2269 after one end, the other end of described resistance R2140 connects the source electrode of described insulated gate bipolar transistor Q322；The grid of described metal-oxide-semiconductor Q330 connect respectively one end of described resistance R490 and described resistance R2276 in parallel with described resistance 2275 after one end, the source electrode of described metal-oxide-semiconductor Q330 connects the source electrode of the other end of described resistance R490, one end of resistance R491 and metal-oxide-semiconductor Q329 respectively, the grid of described metal-oxide-semiconductor Q329 connect respectively the other end of described resistance R491 and described resistance R2274 in parallel with described resistance R2278 after one end；The grid of described metal-oxide-semiconductor Q335 connect respectively one end of described resistance R21300 and described resistance R2286 in parallel with described resistance 2285 after one end, the source electrode of described metal-oxide-semiconductor Q335 connects the source electrode of the other end of described resistance R2130, one end of resistance R2134 and metal-oxide-semiconductor Q334 respectively, the grid of described metal-oxide-semiconductor Q334 connect respectively the other end of described resistance R2134 and described resistance R2284 in parallel with described resistance R2288 after one end；The grid of described metal-oxide-semiconductor Q328 connect respectively one end of described resistance R2139 and described resistance R2277 in parallel with described resistance 2278 after one end, the source electrode of described metal-oxide-semiconductor Q328 connects the source electrode of the other end of described resistance R2139, one end of resistance R2132 and metal-oxide-semiconductor Q332 respectively, the grid of described metal-oxide-semiconductor Q332 connect respectively the other end of described resistance R2132 and described resistance R2282 in parallel with described resistance R2281 after one end；nullDescribed electric capacity C2065、Electric capacity C2059、One end after electric capacity C557 and electric capacity C2066 parallel connection connects the drain electrode of described metal-oxide-semiconductor Q332 respectively、The drain electrode of metal-oxide-semiconductor Q334、The drain electrode of metal-oxide-semiconductor Q329 and described electric capacity C2063、Electric capacity C2060、One end after electric capacity C556 and electric capacity C2064 parallel connection，Described electric capacity C2065、Electric capacity C2059、The other end after electric capacity C557 and electric capacity C2066 parallel connection connects the source electrode of described insulated gate bipolar transistor Q322 respectively、The source electrode of insulated gate bipolar transistor Q326 and the source electrode of insulated gate bipolar transistor Q327，Described electric capacity C2063、Electric capacity C2060、The other end after electric capacity C556 and electric capacity C2064 parallel connection connects the source electrode of described insulated gate bipolar transistor Q323 respectively、The source electrode of insulated gate bipolar transistor Q325 and the source electrode of insulated gate bipolar transistor Q324.
- 4. charging system according to claim 3, it is characterised in that described photovoltaic power supply unit includes photovoltaic cell panel and booster converter, the outfan of described photovoltaic battery panel connects the input of described booster converter.
- null5. charging system according to claim 4，It is characterized in that，Described booster converter includes electric capacity C2310、Electric capacity C2311、Electric fuse F109、Electric fuse F110、Electric capacity C2269、Electric capacity C2270、Resistance R2540、Resistance R2541、Resistance R2539、Resistance R2538、Resistance RD112、Resistance RD113、Resistance R2266、Resistance R2265、Resistance R2268、Resistance R2267、Resistance R2133、Resistance R2141、Metal-oxide-semiconductor Q331、Metal-oxide-semiconductor Q333、Resistance R2151、Resistance R2150、Resistance R2148、Resistance R2149、Electric capacity C2104、Diode D647、Diode D648、Electric capacity C2115、Electric capacity C2116、Electric capacity C2117、Electric capacity C2118、Diode D650、Diode D649、Resistance R2153、Resistance R2152、Resistance R2146、Resistance R2147、Inductance L2189 and inductance L2190，One end of described electric capacity C2310 connects one end and the input voltage PV+ of described electric fuse F109 respectively，The other end of described electric fuse F109 connects one end of described electric capacity C2269 respectively、One end of resistance R2538 and one end of resistance RD112，The other end of described resistance RD112 connects one end of described inductance L2189，The other end of described inductance L2189 connects the drain electrode of described metal-oxide-semiconductor Q331 respectively、Anode tap after diode D647 is in parallel with diode D648 and resistance R2151 in parallel with resistance R2150 after one end，Described resistance R2151 be connected with the other end after resistance R2150 parallel connection described resistance R2149 in parallel with described resistance R2148 after one end，Described resistance R2149 is connected one end of described electric capacity C2104 with the other end after described resistance R2148 parallel connection，The other end of described electric capacity C2104、Cathode terminal after diode D647 is in parallel with diode D648、One end of electric capacity C2115 and one end of electric capacity C2116 and with together with output+，The other end of described resistance R2538 connects one end of described resistance R2539，The grid of described metal-oxide-semiconductor connect respectively one end of described resistance R2141 and described resistance R2266 in parallel with resistance R2265 after one end，One end of described electric capacity C2311 connects one end and the input voltage PV-of described electric fuse F110 respectively，The other end of described electric fuse F110 connects one end of described electric capacity C2270 respectively、One end of resistance R2540 and one end of resistance RD113，The other end of described resistance RD113 connects one end of described resistance R2133 respectively、The source electrode of metal-oxide-semiconductor Q333、One end after resistance R2153 is in parallel with resistance 2152 and diode D650 in parallel with diode D649 after cathode terminal，Described resistance R2153 be connected with the other end after resistance 2152 parallel connection described resistance R2147 in parallel with described resistance R2146 after one end，Described resistance R2147 is connected one end of described electric capacity C2103 with the other end after described resistance R2146 parallel connection，The other end of described electric capacity C2103、Anode tap after diode D650 is in parallel with diode D649、One end of electric capacity C2117 and one end of electric capacity C2118 and with together with output-，The other end of described resistance R2540 connects one end of described resistance 2541，The grid of described metal-oxide-semiconductor Q333 connect respectively one end of described resistance R2133 and resistance R2268 in parallel with resistance R22667 after one end，The other end of described electric capacity C2311 and the equal ground connection PGND of the other end of electric capacity C2310，The other end of described electric capacity C2269、The other end of electric capacity 2270D、The other end of resistance R2541、The other end of resistance R2539、The other end of resistance R2141、The source electrode of metal-oxide-semiconductor Q331、The drain electrode of metal-oxide-semiconductor Q333、The other end of electric capacity C2115、The other end of electric capacity C2116、The other end of electric capacity C2117 and the equal ground connection of the other end of electric capacity C2118.
- 6. charging system according to claim 5, it is characterized in that, described DC/DC converter unit includes three Level Full Bridge chopper circuits, transformator and current rectifying and wave filtering circuit, the outfan of described three Level Full Bridge chopper circuits connects the input of described transformator, and the outfan of described transformator connects the outfan of described current rectifying and wave filtering circuit.
- null7. charging system according to claim 6，It is characterized in that，Described three Level Full Bridge chopper circuits include resistance RD107、Resistance RD109、Resistance R1488、Resistance R1487、Resistance R1490、Resistance R1489、Resistance R16、Resistance R9、Electric capacity C37、Electric capacity C22、Metal-oxide-semiconductor Q121、Metal-oxide-semiconductor Q122、Diode D16、Resistance R13、Resistance R14、Electric capacity C36、Electric capacity C28、Metal-oxide-semiconductor Q123、Metal-oxide-semiconductor Q124、Resistance R1479、Resistance R1480、Resistance R1482、Resistance R1481、Resistance R19、Resistance R10、Resistance R12、Resistance R5、Electric capacity C32、Electric capacity C23、Electric capacity C33、Electric capacity C25、Metal-oxide-semiconductor Q125、Metal-oxide-semiconductor Q126、Metal-oxide-semiconductor Q127、Metal-oxide-semiconductor Q128、Electric capacity C109、Electric capacity C110、Inductance L221、Inductance L222、Resistance R1492、Resistance R1491、Resistance R1493、Resistance R1494、Resistance R15、Resistance R11、Resistance R18、Resistance R8、Diode D18、Electric capacity C34、Electric capacity C29、Electric capacity C35、Electric capacity C26、Resistance R1483、Resistance R1484、Resistance R20、Resistance R6、Resistance R17、Resistance R7、Resistance R1485、Resistance R1486、Diode D17、Electric capacity C31、Electric capacity C24、Electric capacity C30、Electric capacity C27、Metal-oxide-semiconductor Q133、Metal-oxide-semiconductor Q134、Metal-oxide-semiconductor Q135 and metal-oxide-semiconductor Q136，Described resistance RD107 is connected one end of described resistance R1488 respectively with the one end after described resistance RD109 parallel connection、The drain electrode of metal-oxide-semiconductor Q121、One end of electric capacity C37、The drain electrode of metal-oxide-semiconductor Q122、One end of electric capacity C22、One end of resistance R1479、The drain electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、The drain electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The other end of described resistance R1488 connects one end of described resistance R1487，The other end of described resistance R1487 connects one end of described resistance R1490 respectively、The negative electrode of diode D16、The drain electrode of metal-oxide-semiconductor Q123、One end of electric capacity C36、The drain electrode of metal-oxide-semiconductor、One end of electric capacity C28、One end of resistance R16、The source electrode of metal-oxide-semiconductor Q121、The other end of electric capacity C37、One end of resistance R9、The source electrode of metal-oxide-semiconductor Q122 and one end of electric capacity C22，The other end of described resistance R16 connects the grid of described metal-oxide-semiconductor Q121，The other end of described resistance R9 connects the grid of described metal-oxide-semiconductor Q122，The grid of described metal-oxide-semiconductor Q123 connects one end of described resistance R13，The grid of described metal-oxide-semiconductor Q124 connects one end of described resistance R14，The other end of described resistance R1490 connects one end of described resistance R1492 through described resistance R1489，The other end of described resistance R1492 connects one end of described resistance R1491，The other end of described resistance R1491 connects one end of described resistance R1494 respectively、The anode of diode D18、The drain electrode of metal-oxide-semiconductor Q131、One end of electric capacity C35、The drain electrode of metal-oxide-semiconductor 132、One end of electric capacity C26、One end of resistance R15、The source electrode of metal-oxide-semiconductor Q129、One end of electric capacity C34、One end of resistance R11、The source electrode of metal-oxide-semiconductor Q130 and one end of electric capacity C29，The other end of described resistance 1494 connects one end of described resistance R1493，The other end of described resistance R15 connects the grid of described metal-oxide-semiconductor Q129，The other end of described resistance R11 connects the grid of described metal-oxide-semiconductor Q130，The grid of described metal-oxide-semiconductor Q131 connects one end of described resistance R18，The grid of described metal-oxide-semiconductor Q132 connects one end of described resistance R8，The drain electrode of described metal-oxide-semiconductor Q129 connects the other end of described electric capacity C34 respectively、The drain electrode of metal-oxide-semiconductor Q130、The other end of electric capacity C29、The other end of resistance R13、The source electrode of metal-oxide-semiconductor Q123、The other end of electric capacity C36、The other end of resistance R14、One end of electric capacity C109、The source electrode of metal-oxide-semiconductor Q124 and the other end of electric capacity C28，The other end of described resistance R1493 connects the other end of described resistance R18 respectively、The source electrode of metal-oxide-semiconductor Q131、The other end of electric capacity C35、The other end of resistance R8、The other end of electric capacity C26、One end of resistance R1485、One end of resistance R17、The source electrode of metal-oxide-semiconductor Q135、One end of electric capacity C30、One end of resistance R7、The source electrode of metal-oxide-semiconductor Q136 and one end of electric capacity C27，The other end of described resistance R1485 connects one end of described resistance R1486，The other end of described resistance R1486 connects one end of described resistance R1483 respectively、The anode of diode D17、The drain electrode of metal-oxide-semiconductor Q135、The other end of electric capacity C30、The drain electrode of metal-oxide-semiconductor Q136、The other end of electric capacity C27、One end of electric capacity C24、The source electrode of metal-oxide-semiconductor Q134、One end of resistance R6、One end of electric capacity C31、The source electrode of metal-oxide-semiconductor Q133 and one end of resistance R20，The grid of described metal-oxide-semiconductor Q135 connects the other end of described resistance R17，The grid of described metal-oxide-semiconductor Q136 connects the other end of described resistance R7，The grid of metal-oxide-semiconductor Q133 connects the other end of described resistance R20，The grid of described metal-oxide-semiconductor Q134 connects the other end of described resistance R6，The drain electrode of described metal-oxide-semiconductor Q133 connects the other end of described electric capacity C31 respectively、The drain electrode of metal-oxide-semiconductor Q134、The other end of electric capacity C24、One end of electric capacity C110、One end of resistance R12、The source electrode of metal-oxide-semiconductor Q127、One end of electric capacity C33、One end of resistance R5、The source electrode of metal-oxide-semiconductor Q128 and one end of electric capacity C25，The grid of described metal-oxide-semiconductor Q127 connects the other end of described resistance R12，The grid of described metal-oxide-semiconductor Q128 connects the other end of described resistance R5，The drain electrode of described metal-oxide-semiconductor Q127 connects the negative electrode of described diode D19 respectively、One end of resistance R1482、One end of resistance R1480、The other end of electric capacity C33、The drain electrode of metal-oxide-semiconductor Q128、The other end of electric capacity C25、One end of resistance R19、The source electrode of metal-oxide-semiconductor Q125、One end of electric capacity C32、One end of resistance R10、The source electrode of metal-oxide-semiconductor Q126 and one end of electric capacity C23，The grid of described metal-oxide-semiconductor Q125 connects the other end of described resistance R19，The grid of described metal-oxide-semiconductor Q126 connects the other end of described resistance R10，The other end of described resistance 1480 connects the other end of described resistance R1479，The other end of described resistance R1482 connects one end of described resistance R1484 through described resistance R1481，The other end of described resistance R1484 connects the other end of described resistance R1483，The other end of described electric capacity C109 connects one end of described inductance L221，The other end of described electric capacity C110 connects one end of described inductance L222，The anode of described diode D19、The negative electrode of diode D17、The anode of diode D16 and the equal ground connection of negative electrode of diode D18.
- 8. the charging system according to claim 6 or 7, it is characterised in that described transformator adopts is high frequency transformer T118.
- null9. charging system according to claim 8，It is characterized in that，Described current rectifying and wave filtering circuit includes diode D713、Resistance R2521、Resistance R2523、Electric capacity C2112、Resistance R2520、Resistance R2514、Electric capacity C2016、Diode D714、Electric capacity C2123、Electric capacity 2124、Inductance L220、Diode D715、Diode D712、Resistance R2518、Electric capacity C2109、Electric capacity C2108、Resistance R2526、Resistance 2519、Resistance R2524、Diode D716、Diode D719、Electric capacity C2111、Electric capacity C2110、Electric capacity C2125、Electric capacity C2126、Resistance R2517、Resistance R2513、Resistance R2527、Resistance R2528、Resistance R2515、Resistance R2516、Resistance R2522、Resistance R2525、Electric capacity C2107、Electric capacity C2105、Diode D717、Diode D718、Resistance RD111、Resistance RD110、Resistance R2386、Resistance R2385、Resistance R2384、Resistance R2379、Resistance R2378、Resistance R2380、Resistance R2374、Resistance R2373、Resistance R2377、Electric capacity C2113、Electric capacity C2120、Electric capacity C2119、Electric capacity C2314、Electric capacity C2315、Electric capacity C2275、Electric capacity C2277、Electric capacity 2251、Electric capacity C2250、Common mode inductance L219、Electric capacity C2273、Electric capacity C2272、Electric capacity C2267、Resistance R2375、Resistance R2376、Resistance R2383、Resistance R2369、Resistance R2370、Resistance R2371、Resistance R2381、Resistance R2372、Resistance R2382、Electric capacity C2114、Electric capacity C2121、Electric capacity C2122、Electric capacity C2312、Electric capacity C2313、Electric capacity C2252、Electric capacity C2253、Electric capacity C2274、Electric capacity C2276、Electric capacity C2269、Electric fuse F107、Electric fuse F108、Electric capacity C2247、Electric capacity C2246、Electric capacity C2271、Electric capacity C2249 and electric capacity 2248，Output the 5th foot of described high frequency transformer T118 connects the anode of described diode D713 respectively、One end of resistance R2523、One end of resistance R2518 and the negative electrode of diode D715，Output the 6th foot of described high frequency transformer T118 connects one end of described resistance R2514 respectively、One end of resistance R2519、The anode of diode D714 and the negative electrode of diode D712，Output the 7th foot of high frequency transformer T118 connects one end of described resistance R2527 respectively、One end of resistance R2515、The anode of diode D716 and the negative electrode of diode D717，Output the 8th foot of high frequency transformer T118 connects one end of described resistance R2516 respectively、One end of resistance R2528、The anode of diode D719 and the negative electrode of diode D718，One end of described inductance L220 connects the negative electrode of described diode D713 respectively、One end of resistance R2521、One end of resistance R2520、The negative electrode of diode D714 and electric capacity C2123 in parallel with electric capacity C2124 after one end，The other end of described resistance R2521 connects the other end of described resistance R2523 through described electric capacity C2112，The other end of described resistance R2520 connects the other end of described resistance R2514 through described electric capacity C2106，Described electric capacity C2123 is connected the anode of described diode D712 respectively with the other end after electric capacity C2124 parallel connection、One end of resistance R2524、One end of resistance R2526、The anode of diode D715、The negative electrode of diode D719、One end of resistance R2513、One end of resistance R2517、The negative electrode of diode D716 and electric capacity C2125 in parallel with electric capacity C2126 after one end，The other end of described resistance R2513 connects the other end of described resistance R2528 through described electric capacity C2110，The other end of described resistance R2517 connects the other end of described resistance R2527 through described electric capacity C2111，Described electric capacity C2125 is connected the anode of diode D717 respectively with the other end after electric capacity C2126 parallel connection、One end of resistance R2522、One end of resistance R2525、The anode of diode D718 and resistance RD111 in parallel with resistance RD110 after one end，The other end of described resistance R2515 connects the other end of described resistance R2522 through described electric capacity C2107，The other end of described resistance R2516 connects the other end of described resistance R2525 through described electric capacity C2105，The other end of described inductance L220 connects one end of described resistance R2386 respectively、One end of resistance R2385、One end of resistance R2384、The positive pole of electric capacity C2113、One end of electric capacity C2120、One end of electric capacity C2119、One end of electric capacity C2273、1st foot of common mode inductance L219、One end of electric capacity C2275 and one end of electric capacity C2251，The negative pole of described electric capacity C2113 connects one end of described electric capacity C2314 respectively、One end of electric capacity C2315、One end of resistance R2374、One end of resistance R2373、One end of resistance R2377、The positive pole of electric capacity C2114、One end of electric capacity C2121、One end of electric capacity C2122、One end of resistance R2383、One end of resistance R2376 and one end of resistance R2375，Described resistance RD111 is connected one end of described resistance R2381 respectively with the other end after resistance RD110 parallel connection、One end of resistance R2372、One end of resistance R2383、The negative pole of electric capacity C2114、One end of electric capacity C2312、One end of electric capacity C2313、The other end of electric capacity C2273、One end of electric capacity C2253、One end of electric capacity C2274、2nd foot of common mode inductance L219 and ground connection AGND，The other end of electric capacity C2253 is by described electric capacity C2252 ground connection PGND，The other end of described electric capacity C2251 is through described electric capacity C2250 ground connection PGND，The other end of described electric capacity C2120 connects the other end of described electric capacity C2314，The other end of described electric capacity C2119 connects the other end of described electric capacity C2315，The other end of described resistance R2386 connects the other end of described resistance R2385 respectively、The other end of resistance R2384、One end of resistance R2379、One end of resistance R2378 and one end of resistance R2380，The other end of described resistance R2379 connects the other end of described resistance R2378 respectively、The other end of resistance R2380、The other end of resistance R2374、The other end of resistance R2373 and the other end of resistance R2377，The other end of described electric capacity C2121 connects the other end of described electric capacity C2312，The other end of described electric capacity C2122 connects the other end of described electric capacity C2313，The other end of described resistance R2375 connects the other end of described resistance R2376 respectively、The other end of resistance R2383、One end of resistance R2369、One end of resistance R2370 and one end of resistance R2371，The other end of described resistance R2369 connects the other end of described resistance R2370 respectively、The other end of resistance R2371、The other end of resistance R2381、The other end of resistance R2372 and the other end of resistance R2382，The other end ground connection PGND of described electric capacity C2274，The other end ground connection PGND of described electric capacity C2275，4th foot of described common mode inductance L219 connects one end of described electric capacity C2277 respectively、One end of electric capacity C2272、One end of electric capacity C2267、One end of electric capacity C2269、One end of electric fuse F107 and one end of electric fuse F108，3rd foot of described common mode inductance L219 connects one end of described electric capacity C2276 respectively、The other end of electric capacity C2272、The other end of electric capacity C2267、The other end of electric capacity C2269、One end of electric capacity C2249、One end of electric capacity C2271 also exports VOUT-，The other end of described electric capacity C2249 is through described electric capacity C2248 ground connection PGND，The other end of described electric fuse F107 connects the other end of described electric fuse F108 respectively、One end of electric capacity C2246、The other end of electric capacity C2271 also exports VOUT+，The other end of described electric capacity C2246 is through described electric capacity C2247 ground connection PGND，The other end ground connection PGND of described electric capacity C2277，The other end ground connection PGND of described electric capacity C2276.
- 10. charging system according to claim 8, it is characterised in that the voltage of described dc bus is 800V.
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