CN105762136B - Differential transmission line shielding construction - Google Patents
Differential transmission line shielding construction Download PDFInfo
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- CN105762136B CN105762136B CN201610247241.5A CN201610247241A CN105762136B CN 105762136 B CN105762136 B CN 105762136B CN 201610247241 A CN201610247241 A CN 201610247241A CN 105762136 B CN105762136 B CN 105762136B
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- transmission line
- differential transmission
- upper layer
- layer
- shielding construction
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Abstract
The invention belongs to the shielding constructions in integrated circuit back-end, differential transmission line shielding construction, including differential transmission line, the differential transmission line is equipped with several screen units, the screen unit includes upper layer of material, subsurface material, connecting column, the upper layer of material is located at the top of differential transmission line, the subsurface material is located at the lower section of differential transmission line, the right and left of the differential transmission line is equipped with connecting column, the upper layer of material, subsurface material and connecting column constitute closed circuit, the semiconductor substrate ground connection, the beneficial effects of the invention are that: it can be well protected differential transmission line not by the electromagnetic interference of extraneous route, the inside electromagnetic interference of differential transmission line can be eliminated, the density of change transmission line protection unit can be passed through, adjustment reaches the circuit performance index of needs.
Description
Technical field
The invention belongs to the shielding constructions in integrated circuit back-end.
Background technique
The small performance of integrated circuit volume is good, is convenient for large-scale production simultaneously.It is not only obtained in terms of work, consumer electronic device
To being widely applied, at the same military, communication, in terms of be also widely used, it has also become contemporary all trades and professions intelligence
The foundation stone that energy chemical industry is made, but at the same time, electromagnetic interference phenomenon proposes problem to the reliability of integrated circuit, and integrated circuit is set
The standby performance under electromagnetic interference effect be it is diversified, main performance be it is diversified, be mainly shown as reduction technology
Performance indicator leads to the reduction of IDE reliability.It is poor often to show as voice system speech articulation, graphic information system
Clarity reduction, digital display circuit bit error rate nominal price, control system be out of control or maloperation etc.；When electromagnetic compatibility mal function occurs,
Huge loss and life security can be brought to national defence, industry, medical treatment, scientific research and communications and transportation etc..
Electromagnetic interference three elements, i.e. interference source, interferencing propagation approach and sensitive equipment.The common processing method of electromagnetic interference
It include: the wiring measures of shielding, ground connection, filtering and circuit, about transmission line shielding protection, there are two types of traditional methods.It is a kind of
It is to be parallel to the conducting wire of differential transmission line, conducting wire in the side of two differential transmission lines coupling one or more respectively
With differential transmission line on same layer metal layer, and these conducting wires generally connect on high voltage or low-voltage.
Application number: 201180018461.6 patent document discloses the shielding construction for being used for transmission line, a kind of shielding knot
Structure includes: the first pectinate texture and the second pectinate texture, is defined in the first metalization layer on integrated circuit, each pectination knot
Structure includes multiple teeth, and the tooth of each pectinate texture extends towards another dentalation；A electrical conduction via hole more than first, from the first comb
Shape structure upwardly extends；A electrical conduction via hole, upwardly extends from the second pectinate texture more than second；First planar structure and second flat
Face structure, in the second metalization layer on the first metalization layer；The multiple electrical conduction via holes of third, from the first planar structure court
More than first a electrical conduction via holes extend downwardly；And a electrical conduction via hole more than the 4th, from the second planar structure towards more than second
A electrical conduction via hole extends downwardly.First pectinate texture and the second pectinate texture, the first planar structure and the second planar structure with
And the first electrical conduction via hole, the second electrical conduction via hole, third electrical conduction via hole and the 4th electrical conduction via hole are all substantially the same
Potential.In one embodiment, one or more signal wire is located at the between the first planar structure and the second planar structure
In two metalization layers；And in another embodiment, their thirds between the first metalization layer and the second metalization layer
In metalization layer, but since the shielding construction is parallel with transmission line long-range, it is easy to happen the parasitic coupling of transmission line and shielding construction
It closes.
Summary of the invention
The present invention solves the above problems, and provides transmission line shielding construction.
Technical scheme is as follows: differential transmission line shielding construction, including differential transmission line, the differential transmission
Line is equipped with several screen units, and the screen unit includes upper layer of material, subsurface material, connecting column, the upper layer material
Material is located at the top of differential transmission line, and the subsurface material is located at the lower section of differential transmission line, the differential transmission line
The right and left is equipped with connecting column, and the upper layer of material, subsurface material and connecting column constitute closed circuit, the semiconductor lining
Bottom ground connection.
Realization process of the invention is as follows: there are when electromagnetic interference around screen unit, the upper layer of material, lower layer
Material is good conductor, can be shielded the electric part of electromagnetic field in the outer surface of screen unit, according to the difference in the direction of electric field,
The effect that the electric field neutralisation electric interfering field opposite with electric interfering field is induced in the outer surface of screen unit, makes the interior of screen unit
The field strength in portion remains zero, simultaneously for the electromagnetic field of the high frequency of the sending inside differential transmission line, it is easy to shield
Vortex is formed on unit, totally by the energy consumption of electromagnetic field, realizes and differential transmission line is shielded completely.
Detailed description of the invention
Fig. 1 is existing transmission line protection technical pattern schematic diagram.
Fig. 2 is existing transmission line protection technical pattern schematic diagram.
Fig. 3 is the main view of differential transmission line shielding construction.
Fig. 4 is the sectional view of differential transmission line shielding construction.
Fig. 5 is the perspective view of differential transmission line shielding construction.
Fig. 6 is the schematic diagram of differential transmission line shielding construction difference spacing.
Specific embodiment
A specific embodiment of the invention is further described with reference to the accompanying drawing.As shown in Figure 4, integrated circuit one
As manufacture in semiconductor substrate 210, and during manufacture, layer of silicon dioxide oxidation can be generated on a semiconductor substrate
Object 212, this layer of oxide is for isolation of semiconductor substrate and conductive integrated circuit 200.We can pass through manufacturing process skill
Art builds multiple layer metal integrated circuit on a semiconductor substrate with the geometric figure needed, to generate transmission line and its
Corresponding protection structure and circuit-line.
As shown in Fig. 3,4 and 5, a pair of differential transmission line 202 is generated on the first layer metal of integrated circuit 200, and it is poor
Differential wave is carry on dynamic transmission line, i.e., is complementary between two-way differential wave.Every differential transmission line 202 is parallel to
One layer of metallic surface define have it is long and wide, length than it is roomy very much, so the current direction passed through on transmission line mainly with
It is long parallel.
Differential transmission line 202 is to be protected by largely by the floating that upper layer of material 204, subsurface material 206 and through-hole 208 form
Protect unit protection.What upper layer of material 204 generated on the second layer metal adjacent with first layer metal, and each protection is single
On the surface for being parallel to second layer metal, also all definition has long and width to the upper layer of material 204 of position；The length and the second layer of upper layer of material
Metal is parallel, vertical with the length of transmission line, and the length of the length of upper layer of material should be able to be greater than two differential transmission lines
Width and their distances and；Width, with the length of upper layer of material vertical, the Er Qieshang parallel with the length of differential transmission line of upper layer of material
The width of layer material should be smaller than the wavelength of the differential wave carried on transmission line.
Subsurface material 206 and is generated on the non-conterminous third layer metal of second layer metal adjacent with first layer metal,
And the subsurface material 206 of each protection unit the surface for being parallel to second layer metal also define have it is long and wide, length with
Wide situation and upper layer of material 204 is the same.
Through-hole 208 be coupled up in upper layer of material 204 with the long end of subsurface material 206, as shown, one by
The through-hole 208 that conductive material (such as metal) is constituted is mainly used in integrated circuits by the second layer and the non-conterminous gold of third layer
Belong to layer to connect, it will be seen that in the protection unit of each differential transmission line, end all long in upper and lower layer material
One through-hole of end coupling.In this way, transmission line can be by many protection units closely around getting up, to reach effectively
Protecting effect.
In order to adjust reach needs circuit performance index (such as: the propagation delay of capacitor, signal, current loss and function
Consumption), it can be realized by changing the effective length of transmission line of Effects of Density of transmission line protection unit.
The beneficial effects of the invention are that: it can be well protected differential transmission line not by the electromagnetic interference of extraneous route, can disappear
Except the inside electromagnetic interference of differential transmission line, the electricity of needs can be reached by the density of change transmission line protection unit, adjustment
Road performance indicator.
Claims (1)
1. differential transmission line shielding construction, including differential transmission line and semiconductor substrate, it is characterised in that: the differential transmission
Line is equipped with several screen units, and the screen unit includes upper layer of material, subsurface material, via hole, the upper layer of material
It is located at the top of differential transmission line, the subsurface material is located at the lower section of differential transmission line, a left side for the differential transmission line
Right both sides are equipped with via hole, and the upper layer of material, subsurface material and via hole constitute closed circuit, and the semiconductor substrate connects
Ground, screen unit spaced set on differential transmission line, the upper layer of material, subsurface material are by good conductor system
At.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610247241.5A CN105762136B (en) | 2016-04-20 | 2016-04-20 | Differential transmission line shielding construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610247241.5A CN105762136B (en) | 2016-04-20 | 2016-04-20 | Differential transmission line shielding construction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105762136A CN105762136A (en) | 2016-07-13 |
| CN105762136B true CN105762136B (en) | 2018-12-14 |
Family
ID=56325375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610247241.5A Active CN105762136B (en) | 2016-04-20 | 2016-04-20 | Differential transmission line shielding construction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105762136B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6136128A (en) * | 1998-06-23 | 2000-10-24 | Amerasia International Technology, Inc. | Method of making an adhesive preform lid for electronic devices |
| US20100033263A1 (en) * | 2008-08-08 | 2010-02-11 | Nano Chem Tech | Flat transmission wire and fabricating methods thereof |
| US7999361B1 (en) * | 2010-02-19 | 2011-08-16 | Altera Corporation | Shielding structure for transmission lines |
| CN205508813U (en) * | 2016-04-20 | 2016-08-24 | 佛山臻智微芯科技有限公司 | Differential transmission line shielding structure |
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2016
- 2016-04-20 CN CN201610247241.5A patent/CN105762136B/en active Active
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| Publication number | Publication date |
|---|---|
| CN105762136A (en) | 2016-07-13 |
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