CN105758870B - The method for obtaining ground simulation space electronic power spectrum - Google Patents
The method for obtaining ground simulation space electronic power spectrum Download PDFInfo
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- CN105758870B CN105758870B CN201610104235.4A CN201610104235A CN105758870B CN 105758870 B CN105758870 B CN 105758870B CN 201610104235 A CN201610104235 A CN 201610104235A CN 105758870 B CN105758870 B CN 105758870B
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
Abstract
The invention discloses a kind of methods for obtaining ground simulation space electronic power spectrum, the electronic beam current of certain energy is incident on the first thin metal layer and carries out primary scattering, in energy attenuation and while penetrate, the spectral distribution of scattering is formed in the two-dimensional direction, the electron radiation source to form scattering region so that scattering region forms different-energy again is blocked by first baffle, again after the second thin metal layer that scattering region setting certain thickness designs carries out rescattering, second metal layer periphery partial dispersion is blocked by second baffle, obtaining on the irradiation targets surface that rescattering is arranged below, there is the electron spectrum of preferable uniformity to be distributed.Method of the invention utilizes the electronics of single energy, obtains the electron spectrum distribution for being similar to space.The present invention overcomes in space electronic radiation effect ground simulation test, due to cannot achieve the spectral distribution of electron radiation, and the deficiency of the effects equivalent method such as dose algorithm method or the flux method of equal effect can only be utilized.
Description
Technical field
The invention belongs to space environment ground simulation test technical fields, and in particular to a kind of acquisition ground simulation space
The method of electron spectrum.
Background technique
Space radiation environment is the essential environmental factors for causing Spacecraft Material and device performance degeneration even to fail, can
Cause single particle effect, total dose effect, surface charging and discharging effects, interior charged effect and displacement damage effect etc..Space Particle
Radiation environment mainly includes celestial body trapping radiation zone, solar cosmic ray, galactic cosmic rays, neutron etc., and main component is
Electronics and proton.And the electronics in space is then spectral distribution, i.e., with the variation of electron energy, flux changes.Usually
With the raising of electron energy, flux is reduced.
For dose algorithm, when charged particle passes through substance, energy is gradually lost by various interaction processes
Amount, until last energy total loss and be subsequently absorbed in the material or penetrating material, indicate charged particle in material with stopping power
The loss of middle energy.
It wherein, is E for energy10Proton-Induced Reactions target, along depth cumlative energy in target.Energy is E (E≤E10)
Proton depth are as follows:
D (E)=R (E10)-R(E) (A.1)
In formula: R (E10) --- energy E10Proton range；
R (E) --- energy is the range of the proton of E.
It is possible thereby to which the dosage and depth distribution corresponding relationship of proton in the material is calculated.
To electron radiation, the Stopping cross section (Cross Section) of charged particle in the material is first calculated, then again
Calculate the energy deposition in the unit thickness for normalizing to single incoming particle, it is assumed that be Pe.It can then be calculated by following formula
The absorbed dose of electronics in the material are as follows:
De=Pe×Φe×1.6×10-8 (A.2)
Wherein: De --- Electron dose, rad；
Pe --- the energy deposition in normalized unit thickness, MeVcm2/ (g particle)；
Ф e --- Electron fluence, e/cm2。
Thus the dose algorithm of electronics in the material is calculated.
Due to being a spectral distribution in space charged particle, and when ground carries out simulation test, it is impossible to simulate
The truth of space multi-power spectrum particle, therefore, on the one hand this will greatly increase the complexity and manufacturing cost of equipment, separately
On the one hand also it is not necessarily to.On space orbit on charged particle radiation to material, certain dose versus depth is formed in the material
Distribution, the energy that the performance degradation of material is practically due to charged particle deposit caused, ground simulation examination in the material
When testing, so that it may with the dose algorithm in the charged particle fitting space of certain energy, come from the degradation effect angle of material
Consider the equivalence degenerated with space.
Therefore, performance degradation effect of the evaluation Spacecraft Material during the orbital lifetime of space, can be used dose deep
Distribution, key step are as follows:
1) spacecraft task analysis and orbital environment are analyzed
By the track and life cycle of spacecraft, the electronics of track where analytical calculation spacecraft, proton spectrum distribution and
Electromagnetic radiation environment.
2) dose algorithm of orbital electron, proton irradiation in the material
For Spacecraft Material, according to electronics, proton spectrum and the task service life in orbital environment, analytical calculation track
The dose algorithm of ambient electronic, proton irradiation in the material, and provide dose algorithm curve, ground simulation test
Using one depth distribution of dosage of radiation environment in the material as equivalent simulation foundation.
3) energy of charged particle and the selection of fluence in terrestrial surface radiation test
The particle radiation of single energy is difficult to simulate the dose algorithm of space charged particle in the material, therefore
In ground simulation test, the charged particle of multiple kinds of energy is often used to carry out radiation test.Since radiation energy deposition has
It is additive, one depth distribution of dosage of each energy in the material can be first calculated separately out, then by the suction of same depth
It receives dosage to add up, finally calculates total dose algorithm.By highest energy, simulation test particle is selected
Energy and fluence match the intergal dose depth curve of particle accelerator as far as possible with one depth curve of Spatial dose.
Further, it is also possible to which equivalent flux method is by means of " black box approach " Lai Shixian spatial band electrochondria using equivalent flux method
Sub- power spectrum is equivalent with the unidirectional monoenergetic particles radiation effect in laboratory.That is the particle of single energy, certain line or flux
The radiation injury performance degradation caused by Spacecraft Material is identical as performance degradation caused by the continuum of space.
By taking heat control material as an example, if the practical continuum particle radiation in space changes heat control material solar absorptance
ΔαsInfluence be equal to a certain ENERGY E0Particle of the same race with a certain beam current densityThe work of vertical incidence in the same time
With as a result, then the effect of the two has equivalence, i.e.,
Consider the continuity of Space Particle spectral distribution, above formula is represented by
By taking heat control material as an example, after a certain orbital flight time t, the solar absorptance variation of material is Δ αs, by imitating
Equivalence principle is answered, then is had:
Δαs(test)=Δ αs(track)
(B.3)
Assuming that ground simulation test uses particle energy for E0, equivalent flux isEquivalent fluence is φeq, the time is
T, then particle radiation flux density can pass through particles spatial power spectrum and single energy E0To the equivalent pass of heat control material performance change
System establishes:
Wherein,
--- orbit of charged particle differential energy spectrum.
In the particle radiation that heat control material is exposed to space continuum, αsAbsorption coefficient determined by following formula:
Wherein:
φ --- total fluence of all energy radiating particles；
--- the normalization coefficient of particle spectrum, and
Q (E) --- it is determined by the result that certain thermal control tailored radiation generates；
The function of g --- energy and dosage.
The performance degradation Δ α of heat control materialsIt can be indicated by following statistics degradation model:
Δαs=α (E) φβ
(B.6)
According to this relationship, heat control material performance αsVariation under particle radiation may be expressed as:
It is converted into the time, then are as follows:
(4-8) substitution (4-12) can be obtained:
It is available, use single energy for E0Charged particle equivalent flux are as follows:
WhereinIdentical Δ α is generated using single power spectrum analog differentiation energy time spectrumsWhen equivalent flux density.
Above dose algorithm method and equivalent flux method is the method equivalent using effect, i.e. space electronic energy
The dose algorithm of spectrum in the material is identical with the dose algorithm of ground single energy or several energy.But due to sky
Between track electronics be spectral distribution, i.e. the energy range of electronics is very wide, and the flux of the electronics of every kind of energy is not also identical.
It is equivalent that ionisation effect can only be carried out in a certain thickness of thin layer of material using the electronics of one or more of energy, and practical feelings
Condition is then all the presence of electron radiation damage in biggish depth bounds, and damage of the electron radiation of different-energy to material
There is also larger differences.
Therefore, using dose algorithm method and equivalent flux method, the electronics of one or more of energy is only selected to simulate
The radiation effect of the all-round Spectral structure of space electronic, first is that limited by material thickness, second is that effect analog equivalence and accurate
Property still needs further to be studied.And in terms of then can effectively solve the two by the simulation of ground realization space electronic power spectrum
Deficiency improves the reliability and validity of the ground simulation of space electronic radiation effect.
Summary of the invention
In consideration of it, the purpose of the present invention is to provide a kind of method for obtaining ground simulation space electronic power spectrum, this method
Using high energy electron inject after thin metal layer by occur energy qi from characteristic, by the design of thin metal layer thickness, realize by
The electronics that the high energy electron of single energy obtains the thin metal layer back side has the spectral distribution for being similar to space, and can be simple
Efficiently obtain the space electronic power spectrum of ground simulation.
Technical scheme is as follows:
The method for obtaining ground simulation space electronic power spectrum, is incident on the first metal foil for the electronic beam current of certain energy
Layer carries out primary scattering, in energy attenuation and while penetrate, forms the spectral distribution of scattering in the two-dimensional direction, by the
One baffle blocks the electron radiation source to form scattering region so that scattering region forms different-energy again, then sets in scattering region
After setting the second thin metal layer progress rescattering of certain thickness design, the second thin metal layer periphery is blocked by second baffle
Fall partial dispersion, obtaining on the irradiation targets surface that rescattering is arranged below, there is the electron spectrum of preferable uniformity to be distributed.
Wherein, the first thin metal layer is uniform thin metal layer, with a thickness of 0.5-10 microns；
Wherein, the material of the first thin metal layer is gold, silver, copper, iron, tin, zinc, lead, nickel, aluminium, tungsten, molybdenum, tantalum, niobium, titanium
Deng, from easy processing and economy point, the metals such as optional aluminium, copper, gold.
Wherein, 1-20 centimetres of the first thin metal layer of first baffle distance rear.
Wherein, the circle that the centers scatter region area that first baffle is formed is 1-5 centimetres of diameter.
Wherein, the second thin metal layer and the second baffle of coplanar setting are apart from 1-10 centimetres of first baffle.
Wherein, 1-10 centimetres of the second thin metal layer of irradiation targets surface distance.
Wherein, the material of the second thin metal layer is gold, silver, copper, iron, tin, zinc, lead, nickel, aluminium, tungsten, molybdenum, tantalum, niobium, titanium
Deng.
Wherein, the second thin metal layer with a thickness of 0.1-2 millimeters.
Method of the invention is obtained using the electronics of single energy by the Combination Design of thin metal layer and is similar to sky
Between electron spectrum distribution.The present invention overcomes in space electronic radiation effect ground simulation test, due to cannot achieve electronics
The spectral distribution of radiation, and the deficiency of the effects equivalent method such as dose algorithm method or the flux method of equal effect can only be utilized.
Detailed description of the invention
Fig. 1 is that incident electron passes through rescattering area in the method for acquisition ground simulation space electronic power spectrum of the invention
Schematic diagram；
Fig. 2 is that incident electron passes through primary scattering in the method for acquisition ground simulation space electronic power spectrum of the invention
Schematic diagram；
Fig. 3 is the distribution schematic diagram of energy dispersive of the electronics after penetrating thin metal layer in the two-dimensional direction.
Specific embodiment
The method of acquisition ground simulation space electronic power spectrum of the invention is further described with reference to the accompanying drawing,
The explanation is only exemplary, it is no intended to be limited the scope of the invention.
The present invention is based on design below completions: certain ENERGY E0Electronics it is (primary to dissipate by homogeneous metal thin-layer scattering
Penetrate) after, in energy attenuation and while penetrate, will also there be certain spectral distribution E in the two-dimensional direction1, as shown in Figure 1, its
Spectral distribution is using center as the concentric circles of dot, and with the increase from centre distance, energy and flux reduce, such as Fig. 2 institute
Show.The electronics of these primary scatterings is equivalent to the electron radiation source of many different-energies again, by what is designed with certain thickness
After thin metal layer scatters (rescattering), more uniform spectral distribution E is obtained in the plane of face certain distance behind2If
It is as shown in Figure 3 to count thinking.Implementing procedure is as follows:
(1) the space electronic spectral distribution and energy range of simulation are determined
Assuming that the space electronic spectral distribution of quasi- simulation is φ=f (E), energy range is [Emin,Emax]。
(2) thickness and original incident energy of uniform film layer are determined
Assuming that original incident electron energy is E0, homogeneous metal thin layer A with a thickness of l, will after penetrating thin metal layer A
It is incident on the thin metal layer B surface of thickness design, energy on centerline is E1, then have,
E1=E0× g (l),
And there is E1< E0。
Here, E1It is the function of the thickness l of metal A, reduces with the increase of the thickness of metal A.
Meanwhile in 2 border circular areas of baffle that radius is r on metal B surface any point Energy distribution are as follows:
E2=E10 < x < r of × k (x)
As x=0, k (x)=1.
Here, E2It is the function of the radius r of metal B, reduces with the increase of the radius r of metal B.
And E2Again be used as an incident electron source, radius x locate penetration thickness for L (x) metal B after in sample stage C table
Face is spread.
Its Energy distribution on sample stage surface is E3=E20 < x < r of × h [L (x)]
Due to obtain uniform electron spectrum distribution on sample stage surface, i.e., the power spectrum in sample stage any position is equal
It is identical.Due to energy highest at the thin metal layer centre of surface position of thickness design, therefore it is required that the design thickness of the position is most
Thickness, and the edge thickness of thickness design thin layer is most thin, can be approximately 0.
Should then it meet
E0× g (l) × k (r)=Emax
Here, EmaxWith r it is known that meeting E0With l.
(3) center thickness of thickness design thin metal layer B is determined
In Emax、r、E0In the known situation of l, meet
E0× g (l) × h [L (0)]=Emax
The center thickness h of available thin metal layer B.
(4) baffle size and distance are determined
Assuming that the energy on thin metal layer B surface at distance center r2 is Emax, then the radius of baffle 2 and baffle 3 is
The radius r1 of r2, baffle 1 meet
(5) determine the thickness of thin metal layer B with the variation of radius.
Since the Energy distribution in the upper surface thin metal layer B is as radius increases and reduced concentric circles.
Then the every bit of concentric circles all can serve as a launching electronics, vertically penetrate after thin metal layer B in sample stage table
Face formed with the upright projection point center of circle with radius increases and spectral distribution that energy reduces.
Meet and meets on sample stage surface far from the power spectrum at the R of the center of circle
Embodiment one:
(1) the space electronic energy range for assuming quasi- simulation is [100keV, 500keV], and power spectrum is divided into for φ=f
(E)。
(2) thickness and original incident energy of uniform film layer are determined
Selection original incident electron energy be 1MeV, homogeneous metal thin layer A (being assumed to be aluminium) with a thickness of 5 microns, wearing
Thin metal layer B (being assumed to be aluminium) surface that thickness design will be incident on after saturating thin metal layer A, energy on centerline are
900keV, the Energy distribution at any point is on the surface metal B in 2 border circular areas of baffle that radius is r
E20 < x < r of=900 × k (x)
(3) center thickness of thickness design thin metal layer B is determined
Since the ceiling capacity after uniform film A is 900keV, intending the maximum electron energy obtained is 500keV,
And the B metal of 500 micron thickness can then obtain 500keV, then the center thickness of available thin metal layer B is 500 microns.
(4) baffle size and distance are determined
Assuming that working as r on B surface is at the position 10cm, electron energy 500keV, then the radius of baffle 2 is 10cm, then keeps off
The radius of plate 3 is also 10cm；Assuming that the distance between metal layer A and metal layer B are 20cm, if baffle 1 is located at away from metal layer A
At 10cm, then the radius of baffle 1 is 5cm.
(5) determine the thickness of thin metal layer B with the variation of radius.
Since the Energy distribution in the upper surface thin metal layer B is as radius increases and reduced concentric circles.Concentric circles
Every bit all can serve as a launching electronics, be formed after vertically penetrating thin metal layer B on sample stage surface with upright projection point
The spectral distribution of energy reduction with radius increase of the circle of position heart.Then metal B layers of thickness becomes between 0 to 500 microns
Change, and with increasing and thickness reduction with a distance from center origin, specifically meets formula
It is then 1MeV by choosing incident electron energy, uniform aluminium thickness of thin layer is 5 microns, and thickness is at 0 to 500 microns
Between the metallic aluminium thin layer that changes, three baffle center radiuses are respectively 5 centimetres, 10 centimetres, 10 centimetres, and baffle distance is uniformly
The distance of thin metal layer is respectively 10 centimetres, 20 centimetres, 30 centimetres, and available electron spectrum is distributed as 100keV and arrives
500keV。
Although the detailed description and description of the specific embodiments of the present invention are given above, it should be noted that
We can carry out various equivalent changes and modification, generated function to above embodiment according to the concept of the present invention
It, should all be within protection scope of the present invention when acting on the spirit still covered without departing from specification and attached drawing.
Claims (8)
1. obtain ground simulation space electronic power spectrum method, by the electronic beam current of certain energy be incident on the first thin metal layer into
Row primary scattering forms the spectral distribution of scattering in the two-dimensional direction, passes through first baffle in energy attenuation and while penetrate
Block the electron radiation source to form scattering region so that scattering region forms different-energy again, then scattering region be arranged with a thickness of
After 0.1-2 millimeters of the second thin metal layer carries out rescattering, part is blocked by second baffle in the second thin metal layer periphery
Scattering, obtaining on the irradiation targets surface that rescattering is arranged below, there is the electron spectrum of preferable uniformity to be distributed.
2. the method for claim 1, wherein the first thin metal layer is uniform thin metal layer, micro- with a thickness of 0.5-10
Rice.
3. method according to claim 1 or 2, wherein the material of the first thin metal layer be gold, silver, copper, iron, tin, zinc, lead,
Nickel, aluminium, tungsten, molybdenum, tantalum, niobium or titanium.
4. the method for claim 1, wherein 1-20 centimetres of the first thin metal layer of first baffle distance rear.
5. the centers scatter region area that the method for claim 1, wherein first baffle is formed is 1-5 centimetres of diameter
Circle.
6. the method for claim 1, wherein the second thin metal layer and the second baffle of coplanar setting are apart from first gear
1-10 centimetres of plate.
7. the method for claim 1, wherein 1-10 centimetres of the second thin metal layer of irradiation targets surface distance.
8. the method for claim 1, wherein the material of the second thin metal layer be gold, silver, copper, iron, tin, zinc, lead, nickel,
Aluminium, tungsten, molybdenum, tantalum, niobium or titanium.
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| CN111913083B (en) * | 2020-08-07 | 2023-07-21 | 许昌学院 | Simulation test method for space charge-discharge effect of multilayer film material |
| CN115932445B (en) * | 2022-12-14 | 2024-02-13 | 北京卫星环境工程研究所 | Device test method for simulating space radiation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101806754A (en) * | 2009-12-17 | 2010-08-18 | 中国航天科技集团公司第五研究院第五一○研究所 | Thermal control coating space-radiation environmental effect ground simulation experiment method for spacecrafts |
| CN103196932B (en) * | 2013-02-26 | 2014-11-19 | 西安空间无线电技术研究所 | Determination method for secondary electron emission coefficient of metal surface of microwave component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101806754A (en) * | 2009-12-17 | 2010-08-18 | 中国航天科技集团公司第五研究院第五一○研究所 | Thermal control coating space-radiation environmental effect ground simulation experiment method for spacecrafts |
| CN103196932B (en) * | 2013-02-26 | 2014-11-19 | 西安空间无线电技术研究所 | Determination method for secondary electron emission coefficient of metal surface of microwave component |
Non-Patent Citations (2)
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| 航天材料紫外辐照效应地面模拟实验方法;沈自才等;《航天材料紫外辐射效应地面模拟实验方法》;20150228;第32卷(第1期);第43-48页 |
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