CN105752952B - A kind of method for preparing overlength beta-silicon nitride nanowire in porous body or powder shaped carborundum Polycarbosilane surface in situ and ex situ - Google Patents
A kind of method for preparing overlength beta-silicon nitride nanowire in porous body or powder shaped carborundum Polycarbosilane surface in situ and ex situ Download PDFInfo
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- CN105752952B CN105752952B CN201610060591.0A CN201610060591A CN105752952B CN 105752952 B CN105752952 B CN 105752952B CN 201610060591 A CN201610060591 A CN 201610060591A CN 105752952 B CN105752952 B CN 105752952B
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- polycarbosilane
- powder
- silicon nitride
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- 239000000843 powder Substances 0.000 title claims abstract description 132
- 229920003257 polycarbosilane Polymers 0.000 title claims abstract description 78
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 64
- 239000002070 nanowire Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 32
- 238000011066 ex-situ storage Methods 0.000 title claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 4
- 229910052573 porcelain Inorganic materials 0.000 claims abstract description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 238000000498 ball milling Methods 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 5
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 5
- 238000002360 preparation method Methods 0.000 abstract description 8
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 239000007787 solid Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- IKXDEFIEGAVNOZ-UHFFFAOYSA-N [SiH4].[C] Chemical compound [SiH4].[C] IKXDEFIEGAVNOZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610060591.0A CN105752952B (en) | 2016-01-28 | 2016-01-28 | A kind of method for preparing overlength beta-silicon nitride nanowire in porous body or powder shaped carborundum Polycarbosilane surface in situ and ex situ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610060591.0A CN105752952B (en) | 2016-01-28 | 2016-01-28 | A kind of method for preparing overlength beta-silicon nitride nanowire in porous body or powder shaped carborundum Polycarbosilane surface in situ and ex situ |
Publications (2)
Publication Number | Publication Date |
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CN105752952A CN105752952A (en) | 2016-07-13 |
CN105752952B true CN105752952B (en) | 2017-08-25 |
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CN201610060591.0A Active CN105752952B (en) | 2016-01-28 | 2016-01-28 | A kind of method for preparing overlength beta-silicon nitride nanowire in porous body or powder shaped carborundum Polycarbosilane surface in situ and ex situ |
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CN (1) | CN105752952B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109534816B (en) * | 2017-09-21 | 2022-03-04 | 中南大学 | Method for preparing high-strength porous silicon carbide ceramic |
CN111205100B (en) * | 2020-03-02 | 2022-06-07 | 西北工业大学 | Method for in-situ growth of silicon carbide nanowire by non-catalytic precursor impregnation pyrolysis method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102659086A (en) * | 2012-05-04 | 2012-09-12 | 中国人民解放军国防科学技术大学 | Preparation method of silicon nitride nanometer fiber felt |
CN102674845A (en) * | 2012-05-07 | 2012-09-19 | 中国人民解放军国防科学技术大学 | Preparation method of silicon carbide fibers with silicon nitride surface layer |
CN104988603A (en) * | 2015-07-06 | 2015-10-21 | 苏州工业园区高性能陶瓷纤维工程中心有限公司 | Preparation method for aluminum-containing continuous silicon nitride fibers |
-
2016
- 2016-01-28 CN CN201610060591.0A patent/CN105752952B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102659086A (en) * | 2012-05-04 | 2012-09-12 | 中国人民解放军国防科学技术大学 | Preparation method of silicon nitride nanometer fiber felt |
CN102674845A (en) * | 2012-05-07 | 2012-09-19 | 中国人民解放军国防科学技术大学 | Preparation method of silicon carbide fibers with silicon nitride surface layer |
CN104988603A (en) * | 2015-07-06 | 2015-10-21 | 苏州工业园区高性能陶瓷纤维工程中心有限公司 | Preparation method for aluminum-containing continuous silicon nitride fibers |
Non-Patent Citations (3)
Title |
---|
γ辐照聚碳硅烷先驱丝热解制备氮化硅陶瓷纤维及性能;黎阳等;《硅酸盐学报》;20131031;第41卷(第10期);第1318-1322页 * |
聚碳硅烷制备连续SiC纤维的不熔化处理工艺研究进展;吴义伯等;《材料导报》;20060731;第20卷(第7期);第80-83,87页 * |
聚碳硅烷氮化热解法制备Si3N4;兰琳等;《功能材料》;20131031;第44卷(第20期);第2981-2984页 * |
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CN105752952A (en) | 2016-07-13 |
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Effective date of registration: 20240206 Address after: 230088 Hefei City, Anhui Province, China (Anhui) Pilot Free Trade Zone, Hefei Area, Shushan Economic and Technological Development Zone, Huguang Road, Independent Innovation Industrial Base Phase III (South Zone), Building A, 207-14 Patentee after: Hefei Hangtao Technology Consulting Partnership Enterprise (Limited Partnership) Country or region after: China Patentee after: Harbin Institute of Technology Asset Management Co.,Ltd. Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN INSTITUTE OF TECHNOLOGY Country or region before: China |
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Effective date of registration: 20240510 Address after: No.207-14, Building A, Huguang (South District), Shushan Economic and Technological Development Zone, Hefei Area, China (Anhui) Pilot Free Trade Zone, Hefei City, Anhui Province, 230000 Patentee after: Hefei Xinhangyu New Materials Technology Co.,Ltd. Country or region after: China Address before: 230088 Hefei City, Anhui Province, China (Anhui) Pilot Free Trade Zone, Hefei Area, Shushan Economic and Technological Development Zone, Huguang Road, Independent Innovation Industrial Base Phase III (South Zone), Building A, 207-14 Patentee before: Hefei Hangtao Technology Consulting Partnership Enterprise (Limited Partnership) Country or region before: China Patentee before: Harbin Institute of Technology Asset Management Co.,Ltd. |