CN105744818A - Flexible magnetic shielding and anti-irradiation film - Google Patents
Flexible magnetic shielding and anti-irradiation film Download PDFInfo
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- CN105744818A CN105744818A CN201610073900.8A CN201610073900A CN105744818A CN 105744818 A CN105744818 A CN 105744818A CN 201610073900 A CN201610073900 A CN 201610073900A CN 105744818 A CN105744818 A CN 105744818A
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- flexible
- thin film
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Soft Magnetic Materials (AREA)
Abstract
The invention relates to a flexible magnetic shielding and anti-irradiation film, which is prepared from a flexible rubber matrix and a functional doped material, wherein the doped material is evenly dispersed into the flexible rubber matrix and has the flexibility of tensile property, bending property and the like. A protected object is subjected to packaging treatment with the film; and then the interference of an external magnetic field and irradiation to the protected object in the packaging film can be reduced. The flexible film is not limited by the appearance of the protected object and the type of the functional doped material, is simple, flexible, low in cost and wide in application, can be applied to electromagnetic shielding and anti-irradiation reinforcement of logic devices of a CPU, a microprocessor and the like, memory devices of a Flash, an MRAM and the like and various electronic devices of a sensing device, a high-frequency device, a wire and the like, can be applied to overall magnetic shielding and anti-irradiation reinforcement of an integrated circuit and can also be applied to anti-irradiation protection of life entities of a human body and the like.
Description
Technical field
The present invention relates to electromagnetic shielding and Flouride-resistani acid phesphatase field, particularly relate to a kind of flexible magnetic shielding and Flouride-resistani acid phesphatase thin film.
Background technology
Electromagnetic shielding and Flouride-resistani acid phesphatase functional material, be possible not only to realize the steady operation of electronic device under radiation environment, and can the personnel that work in the hazardous environment such as high-intensity magnetic field, radiation be protected.Electronic devices and components are carried out electromagnetic shielding or Flouride-resistani acid phesphatase strengthening, job stability and the service life of electronic device and integrated circuit can be greatly enhanced, there is important industrial application value, numerous in this industry being closely related particularly in railway traffic, nuclear energy, Aero-Space, military project, geology detecting, medical treatment etc..
Along with the development of magnetic rotation storage and senser element, the development of especially wearable class flexible device, electronic device is more and more higher to the requirement of electromagnetic shielding and Flouride-resistani acid phesphatase.The fast development of nuclear energy and space application has also promoted the demand to electromagnetic shielding and Flouride-resistani acid phesphatase.Traditional electromagnetic shielding and Flouride-resistani acid phesphatase method, utilize the thicker coat of metal or metal shell that electronic device is protected, and its shortcoming is that complex process, preparation cost are high, and size is big, volume weight, is unfavorable for the system integration and miniaturization, especially at space industry.On the other hand, in the face of emerging human body wearable device application, electromagnetic shielding and radiation resistance material need have the flex capability such as stretching, bending, this just currently existing technology lack.
Along with the development of science and technology, new material and new physical effect are constantly applied in electromagnetic shielding and Flouride-resistani acid phesphatase.Such as, light, high strength & high electric-conduction can Graphene and the amorphous nano powder of carbon fibre material, high magnetic permeability and the intensity of magnetization and amorphous wire material, radiation-resistant heavy metal nano-powder etc..By selecting suitable type of solvent, selecting different melting concns and different combinations of materials; the composite film material with different magneto-electric behavior can be realized; excellent electromagnetic shielding and Flouride-resistani acid phesphatase enhanced protection layer is prepared for electronic device; can be used for human body wearable device, provide safeguard protection for human body.
Summary of the invention
The present invention overcomes above-mentioned weak point; purpose is in that to provide a kind of flexible magnetic shielding and Flouride-resistani acid phesphatase thin film; thin film is monofilm or is become by multilayer thin film stack stacked group; every tunic includes flexible colloid and functional dopant material; functional dopant material is homogeneously dispersed in flexible colloid; this thin film has the flexibilities such as stretching, bending, is not only restricted to protection object profile and functional dopant material kind, and simple and flexible, cost are low, widely applicable.
The present invention reaches above-mentioned purpose by the following technical programs: a kind of flexible magnetic shielding and Flouride-resistani acid phesphatase thin film, multilayer thin film stack stacked group become；Every tunic includes flexible colloid, functional dopant material, and functional dopant material is evenly distributed in flexible glue body.
As preferably, described thin film can be also single-layer membrane structure, and including flexible colloid, functional dopant material, functional dopant material is evenly distributed in flexible glue body.
As preferably, described flexible colloid is any one in organic solvent, resin, plastics, rubber, glass.
As preferably, described functional dopant material is any one or a few combination of magnetic powder, non-crystalline flour, amorphous wire, metal powder, metal wire, graphite, CNT.
As preferably, the thickness of every tunic of described thin film, stacking order are not limit.
As preferably, the functional dopant material kind comprised in described every tunic is identical or different.
The beneficial effects of the present invention is: (1) thin film of the present invention has the flexibilities such as stretching, bending; the interference to packaging film internal protection object of external magnetic field and irradiation can be reduced; this thin film is not only restricted to protection object profile and functional dopant material kind, and simple and flexible, cost are low, widely applicable；(2) have light quality, can conformal molding, be prone to that processing, technique is simple, good reliability, motility advantages of higher, have a good application prospect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the shielding of the embodiment of the present invention 1 flexible magnetic and Flouride-resistani acid phesphatase thin film；
Fig. 2 is the structural representation of the shielding of the embodiment of the present invention 2 flexible magnetic and Flouride-resistani acid phesphatase thin film.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described further, but protection scope of the present invention is not limited to that:
Embodiment 1: a kind of flexible magnetic shielding and Flouride-resistani acid phesphatase thin film are as it is shown in figure 1, be single-layer membrane structure, and film includes flexible colloid 1 and functional dopant material 2, and functional dopant material 2 is homogeneously dispersed in flexible colloid 1.Flexible colloid 1 is any one in organic solvent, resin, plastics, rubber, glass；Functional dopant material 2 is any one or a few combination of magnetic powder, non-crystalline flour, amorphous wire, metal powder, metal wire, graphite, CNT.
During use; the thin film of flexible colloid 1 and functional dopant material 2 composition is protected for protection object; external magnetic field and radiation are reflected or conducted away to external magnetic field and irradiation actinism, on thin film, film absorption, thus protecting protected object not disturbed by external magnetic field and irradiation.
Embodiment 2: a kind of flexible magnetic shielding and Flouride-resistani acid phesphatase thin film are as in figure 2 it is shown, be multi-layer film structure, and every tunic includes flexible colloid 1 and functional dopant material 2, and functional dopant material 2 is homogeneously dispersed in flexible colloid 1.Flexible colloid 1 is any one in organic solvent, resin, plastics, rubber, glass；Functional dopant material 2 is any one or a few combination of magnetic powder, non-crystalline flour, amorphous wire, metal powder, metal wire, graphite, CNT.
Wherein, the functional dopant material that every tunic comprises can be identical, it is also possible to being different, the stacking order of every tunic, position, thickness are not limit.
During use; the thin film of flexible colloid 1 and functional dopant material 2 composition is protected for protection object; external magnetic field and radiation are reflected or conducted away to external magnetic field and irradiation actinism, on thin film, film absorption, thus protecting protected object not disturbed by external magnetic field and irradiation.
Be specific embodiments of the invention and the know-why used described in above, if the change that conception under this invention is made, function produced by it still without departing from description and accompanying drawing contain spiritual time, protection scope of the present invention must be belonged to.
Claims (6)
1. a flexible magnetic shielding and Flouride-resistani acid phesphatase thin film, it is characterised in that thin film is become by multilayer thin film stack stacked group；Every tunic includes flexible colloid (1), functional dopant material (2), and functional dopant material (2) is evenly distributed in flexible colloid (1).
2. a kind of flexible magnetic shielding according to claim 1 and Flouride-resistani acid phesphatase thin film, it is characterized in that: described thin film can be also single-layer membrane structure, including flexible colloid (1), functional dopant material (2), functional dopant material (2) is evenly distributed in flexible colloid (1).
3. a kind of flexible magnetic shielding according to claim 1 and 2 and Flouride-resistani acid phesphatase thin film, it is characterised in that: described flexible colloid (1) is organic solvent, any one in resin, plastics, rubber, glass.
4. a kind of flexible magnetic shielding according to claim 1 and 2 and Flouride-resistani acid phesphatase thin film, it is characterised in that: described functional dopant material (2) is magnetic powder, any one or a few combination of non-crystalline flour, amorphous wire, metal powder, metal wire, graphite, CNT.
5. a kind of flexible magnetic shielding according to claim 1 and Flouride-resistani acid phesphatase thin film, it is characterised in that: the thickness of every tunic of described thin film, stacking order are not limit.
6. a kind of flexible magnetic shielding according to claim 5 and Flouride-resistani acid phesphatase thin film, it is characterised in that: the functional dopant material kind comprised in described every tunic is identical or different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610073900.8A CN105744818A (en) | 2016-02-03 | 2016-02-03 | Flexible magnetic shielding and anti-irradiation film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610073900.8A CN105744818A (en) | 2016-02-03 | 2016-02-03 | Flexible magnetic shielding and anti-irradiation film |
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| CN105744818A true CN105744818A (en) | 2016-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610073900.8A Pending CN105744818A (en) | 2016-02-03 | 2016-02-03 | Flexible magnetic shielding and anti-irradiation film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107949261A (en) * | 2017-11-15 | 2018-04-20 | 中国科学院宁波材料技术与工程研究所 | A kind of electromagnetic wave absorbent material and preparation method thereof |
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2016
- 2016-02-03 CN CN201610073900.8A patent/CN105744818A/en active Pending
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| CN1199496A (en) * | 1996-08-30 | 1998-11-18 | 株式会社东金 | Composite magnetic tape |
| CN1200192A (en) * | 1996-09-06 | 1998-11-25 | 株式会社东金 | Composite magnetic material and electromagnetic interference suppressing material |
| CN1197988A (en) * | 1997-01-20 | 1998-11-04 | 大同特殊钢株式会社 | Soft magnetic alloy powder for electromagnetic and magnetic shield, and shielding members containing the same |
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| CN1401562A (en) * | 2002-10-14 | 2003-03-12 | 北京大学 | Carbon nano-tube/ferromagnetism metal nanowire composite material, mfg. method and use thereof |
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| CN1883013A (en) * | 2003-10-16 | 2006-12-20 | 韩国电子通信研究院 | Electromagnetic shielding material having carbon nanotube and metal as electrical conductor |
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Application publication date: 20160706 |