CN105742401A - Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery - Google Patents
Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery Download PDFInfo
- Publication number
- CN105742401A CN105742401A CN201410758760.9A CN201410758760A CN105742401A CN 105742401 A CN105742401 A CN 105742401A CN 201410758760 A CN201410758760 A CN 201410758760A CN 105742401 A CN105742401 A CN 105742401A
- Authority
- CN
- China
- Prior art keywords
- cigs
- layer
- preparation
- electrode layer
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a preparation method of a copper-indium-gallium-selenium (GIGS) film solar battery. The method comprises the following steps: a back electrode layer is prepared on a substrate; preparing a CIGS absorption layer on the prepared back electrode layer; spraying a solution containing Cd ions on the surface of the CIGS absorption layer, heating the CIGS absorption layer at a temperature of 100 DEG C to 500 DEG C for 10min to 60min and then taking the CIGS absorption layer out; preparing a CdS buffer layer on the CIGS absorption layer; preparing a window layer on the prepared CdS buffer layer; and preparing an electrode layer on the window layer, and thus the CIGS film solar battery is obtained. According to the invention, after the CIGS absorption layer is prepared, the solution containing the Cd ions is sprayed on the surface of the CIGS absorption layer, then, the CIGS absorption layer is subjected to high-temperature heating, the Cd ions are enabled to be rapidly diffused to the surface of the CIGS absorption layer, and a shallow imbedded junction is formed on the surface of the CIGS absorption layer, such that compounding of carriers on a CIGS/CdS interface layer is reduced, the N-type features of the CIGS film solar battery are enhanced, and the battery conversion efficiency is improved by 5% to 10%.
Description
Technical field
The present invention relates to area of solar cell, the preparation method being specifically related to a kind of CIGS (CIGS) thin-film solar cells.
Background technology
Along with the development of economic society, the demand of the energy is also grown with each passing day by people.Owing to conventional fossil energy reserve is limited, contaminated environment.Therefore, it is deficient that the clean energy resource that development utilization is new just becomes solution conventional energy resource, the unique channel of environmental pollution.Owing to solar energy is inexhaustible, cleanliness without any pollution, is the most continuable the most desirable regenerative resource in future.Luminous energy is directly changed into electric energy by solaode, is a kind of important way of Solar use.
CIGS (CIGS) thin-film solar cells has the advantages such as the high absorption coefficient of light, high transformation efficiency, adjustable energy gap, high stability, stronger capability of resistance to radiation, current conversion efficiency alreadys more than polycrystal silicon cell, and still in continuous acquisitionNew prominentBroken, it is a kind of thin-film solar cells having very much development potentiality.CIGS absorbed layer in solaode is a kind of P-type semiconductor material, this be due to solaode needed for CIGS absorbed layer composition be lean Cu state, have substantial amounts of Cu room V in thin filmCuExist Deng acceptor-type defect.It addition, research shows: there is (the CuIn of a layer tens nanometers on the surface of CIGS absorbed layer5Se8, CuIn3Se5, CuIn2Se3.5, Cu3In5Se9Deng) ordered defect compounds (ODC) exists, they are n type material, can form shallow embedding PN junction at CIGS surface shallow-layer, make PN junction and CIGS/CdS interfacial separation, and then reduce Carrier recombination.
In CIGS solaode, generally adopt CdS as cushion, reduce absorbed layer adaptive with the lattice of Window layer and band gap.Additionally, when preparing CdS cushion, Cd atom can spread to the ODC layer on CIGS surface, occupy the position of Cu atom, form CdCuShi zhiming, strengthens the N-type characteristic of ODC layer, improves heterojunction boundary characteristic.The preparation of usual CdS cushion adopts chemical bath method (CBD) to prepare, bath temperature is relatively low, it is less to the diffusion of CIGS absorbed layer that prepared CdS cushion and CIGS absorb interlayer Cd atom, the inversion layer on CIGS surface is relatively thin, PN junction and CIGS/CdS interface can not be efficiently separated, easily there is photo-generated carrier compound in interface, affects battery conversion efficiency.
Summary of the invention
For this, the present invention, in order to increase the diffusion to CIGS absorbed layer surface of the Cd ion, improves the transoid on CIGS surface, reduces CIGS/CdS Interface composites, improve interfacial characteristics, the preparation method that the invention provides a kind of CIGS (CIGS) thin-film solar cells.
Adopted technical scheme is as described below:
The preparation method of a kind of CIGS (CIGS) thin-film solar cells, described method comprises the steps:
Step one, prepares dorsum electrode layer on substrate；
Step 2, prepares CIGS absorbed layer on obtained dorsum electrode layer；
Step 3, by the solution spraying containing Cd ion in CIGS absorbed layer surface, and takes out after heating 10min-60min at 100 DEG C-500 DEG C；
Step 4, the CIGS absorbed layer in step 3 is prepared CdS cushion；
Step 5, prepares Window layer on obtained CdS cushion；
Step 6, prepares electrode layer in Window layer, obtains CIGS thin-film (CIGS) solaode.
Preferably, the diffusion furnace at CIGS absorbed layer being positioned over 250-350 DEG C in described step 3 heats 25-45min take out.
Chemical bath method (CBD), magnetron sputtering method or evaporation can being adopted in described step 4 to deposit on described CIGS absorbed layer surface and prepare CdS cushion, CdS buffer layer deposition thickness is 10nm-100nm.
Described substrate includes soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al paper tinsel, Mo paper tinsel, Cu paper tinsel, polyimides (PI), the one in pet resin (PET).
Described CIGS absorbed layer adopts evaporation, sputtering and selenization technique or mixing sputtering mode to prepare.
Electrode layer in described step 6 is Ni/Al two-layer electrode layer.
The present invention has the advantages that relative to prior art
The present invention is after preparation CIGS absorbed layer, by at the CIGS absorbed layer surface spraying solution containing Cd ion, then through high-temperature heating, Cd ion is made to accelerate diffusion on CIGS absorbed layer surface, shallow embedding knot is formed at CIGS absorbed layer surface shallow-layer, reduce the carrier compound at CIGS/CdS boundary layer, strengthen the N-type characteristic of CIGS (CIGS) thin-film solar cells, improve battery conversion efficiency and reach 5-10%.Preparation method provided by the present invention is simply controlled, good with conventional skill compatibility, and cost is low.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below according to specific embodiments of the invention and combineAccompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1It it is CIGS provided by the invention (CIGS) thin-film solar cells preparation method frameFigure；
Fig. 2It it is CIGS provided by the present invention (CIGS) film solar battery structureFigure。
In figure: 1-substrate, 2-dorsum electrode layer, 3-CIGS absorbed layer, 4-CdS cushion, 5-Window layer, 51-intrinsic transparent oxide layer, 52-including transparent conducting oxide layer, 6-electrode layer.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction withAccompanying drawingEmbodiment of the present invention is described further in detail.
The present invention provides a kind of CIGS (CIGS) thin-film solar cells preparation method,As schemedShow, whereinFig. 2Structure for CIGS (CIGS) thin-film solar cellsFigure, including substrate 1, dorsum electrode layer 2, CIGS absorbed layer 3, CdS cushion 4, Window layer 5 and nickel aluminum (Ni/Al) electrode layer 6.In cell manufacturing process, at CIGS absorbed layer 3 surface spraying containing Cd solion and through high-temperature heating, make Cd acceleration of ions spread to CIGS absorbed layer 3 top layer, then carry out the preparation of CdS cushion 4 and other each layers again.By containing Cd solion and carrying out high-temperature heating at CIGS absorbed layer surface spraying, make Cd ion carry out thermal diffusion to CIGS absorbed layer surface, promote CIGS absorbed layer surface transoid, improve CIGS/CdS boundary layer characteristic.Here cadmium acetate Cd (CH is included containing the solution of Cd ion3COO)3Solution, cadmium sulfate CdSO4Solution, cadmium iodide CdI2Solution or Caddy (Cleary) CdCl2Solution etc..
Substrate 1 therein includes soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al paper tinsel, Mo paper tinsel, Cu paper tinsel, polyimides (PI), pet resin (PET) and other substrates being suitable for.
Dorsum electrode layer 2 adopts magnetically controlled DC sputtering vacuum moulding machine, and thickness is 0.1-2 μm.
CIGS absorbed layer 3 can adopt the modes such as evaporation, sputtering and selenization technique or mixing sputtering to prepare, and absorber thickness is 0.5-3 μm.
Such as Fig. 1Shown in, the method preparing CIGS (CIGS) thin-film solar cells comprises the steps:
[S1] prepares dorsum electrode layer on substrate；
[S2] prepares CIGS absorbed layer on obtained dorsum electrode layer；
Solution spraying containing Cd ion in CIGS absorbed layer surface, and is heated at 100 DEG C-500 DEG C after 10min-60min and takes out by [S3]；Wherein preferred heating-up temperature is 250 DEG C-350 DEG C, and heat time heating time is 25-45min.
[S4] CIGS absorbed layer in S2 step is prepared CdS cushion；
Preferably employing chemical bath method (CBD) and deposit prepared CdS cushion on CIGS absorbed layer surface, reaction solution preferably employs following proportioning: proportioning 1mol/L cadmium acetate Cd (CH in the beaker container of 1000mL3COO)2, 5mol/L thiourea NH2CSNH2, 1mol/L ammonium acetate CH3COONH4With 0.4mol/L ammonia NH4OH, the solution of use is analytical pure, solution PH=10-13；Depositing temperature: 60-80 DEG C, water-bath sedimentation time 5-30min, CdS buffer layer deposition thickness is 10-100nm.Magnetron sputtering method or evaporation can certainly be adopted to deposit on described CIGS absorbed layer surface and to prepare CdS cushion, repeat no more here.
[S5] prepares Window layer on obtained CdS cushion；
Described Window layer includes intrinsic transparent oxide layer, such as i-ZnO layer, i-SnO2And other applicable materials adopt, intrinsic layer thickness is 30-100nm.
Described Window layer includes including transparent conducting oxide layer (TCO), such as Al-Doped ZnO (ZnO:Al), gallium-doped zinc oxide (ZnO:Ga), boron-doping zinc oxide (ZnO:B), hydrogen loading zinc oxide (ZnO:H), fluorine doped tin oxide (SnO2: F), tin-doped indium oxide (In2O3: 5n) and other applicable materials, film thickness is 200-1500nm.
[S6] prepares electrode layer in Window layer, obtains CIGS thin-film (CIGS) solaode.
Electrode layer is Ni/Al two-layer electrode layer.
Described Ni/Al two-layer electrode layer adopts thermal evaporation or electron-beam vapor deposition method to prepare, and thickness is 0.5-4 μm.
Below by the preparation method that specific embodiment explains each layer.
Embodiment 1
Step one, soda-lime glass is carried out ultrasonic cleaning, then dry up in loading magnetron sputtering vacuum chamber with pure nitrogen gas, dehydration degassing, adopt Deposited By Dc Magnetron Sputtering bilayer Mo dorsum electrode layer, thickness is 1 μm；
Step 2, by preparation have the substrate deionized water of Mo dorsum electrode layer to clean up, dry up with pure nitrogen gas, load vacuum chamber, treat that vacuum is better than 1 × 10-3After Pa, adopting coevaporation method depositing CIGS absorber layer, thickness is 2 μm；
Step 3, by 1mol/L cadmium acetate Cd (CH3COO)2Solution uniformly sprays on CIGS absorbed layer surface, CIGS absorbed layer is put into diffusion furnace and is heated, heating-up temperature 250 DEG C, and heat time heating time, 30min, took out；
Step 4, employing chemical bath (CBD) method prepare CdS cushion, and bath temperature is 80 DEG C, sedimentation time 15min, and thickness is 50nm；
Concrete reaction solution proportioning is as follows: proportioning 1mol/L cadmium acetate Cd (CH in the beaker container of 1000mL3COO)2, 5mol/L thiourea NH2CSNH2, 1mol/L ammonium acetate CH3COONH4With 0.4mol/L ammonia NH4OH, the solution of use is analytical pure, solution PH=11.5.
Step 5, ZnO:Al Window layer thick for i-ZnO and 800nm thick for employing magnetron sputtering deposition 80nm；
Step 6, employing electron-beam vapor deposition method deposit the Ni/Al two-layer electrode layer of 3 μ m-thick.
Adopting CIGS (CIGS) thin-film solar cells prepared by said method compared with the copper-indium-galliun-selenium film solar cell of prior art, the conversion efficiency of battery can improve 5-10%.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.And the apparent change thus extended out or variation are still among protection scope of the present invention.
Claims (6)
1. the preparation method of CIGS (CIGS) thin-film solar cells, it is characterised in that described method comprises the steps:
Step one, prepares dorsum electrode layer on substrate；
Step 2, prepares CIGS absorbed layer on obtained dorsum electrode layer；
Step 3, by the solution spraying containing Cd ion in CIGS absorbed layer surface, and takes out after heating 10min-60min at 100 DEG C-500 DEG C；
Step 4, the CIGS absorbed layer in step 3 is prepared CdS cushion；
Step 5, prepares Window layer on obtained CdS cushion；
Step 6, prepares electrode layer in Window layer, obtains CIGS (CIGS) thin-film solar cells.
2. preparation method according to claim 1, it is characterised in that heat 25-45min in the diffusion furnace at CIGS absorbed layer being positioned over 250-350 DEG C in described step 3 and take out.
3. preparation method according to claim 1, it is characterized in that, adopting chemical bath method (CBD), magnetron sputtering method or evaporation to deposit on described CIGS absorbed layer surface in described step 4 and prepare CdS cushion, CdS buffer layer deposition thickness is 10-100nm.
4. preparation method according to claim 1, it is characterised in that described substrate includes soda-lime glass, low Fe glass, solar energy float glass, stainless steel foil, Al paper tinsel, Mo paper tinsel, Cu paper tinsel, polyimides (PI), the one in pet resin (PET).
5. preparation method according to claim 1, it is characterised in that described CIGS absorbed layer adopts evaporation, sputtering and selenization technique or mixing sputtering mode to prepare.
6. preparation method according to claim 1, it is characterised in that the electrode layer in described step 6 is Ni/Al two-layer electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410758760.9A CN105742401A (en) | 2014-12-10 | 2014-12-10 | Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410758760.9A CN105742401A (en) | 2014-12-10 | 2014-12-10 | Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105742401A true CN105742401A (en) | 2016-07-06 |
Family
ID=56239071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410758760.9A Pending CN105742401A (en) | 2014-12-10 | 2014-12-10 | Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105742401A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623046A (en) * | 2017-08-25 | 2018-01-23 | 中国科学院上海微系统与信息技术研究所 | CuInGaSe absorbed layer post-processing approach and the solar cell preparation method based on it |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585140A (en) * | 2004-06-14 | 2005-02-23 | 王东生 | Multi-absorbing-layer solar battery and manufacturing method thereof |
| CN102110737A (en) * | 2009-12-29 | 2011-06-29 | 中国电子科技集团公司第十八研究所 | Method for preparing copper indium gallium selenide (CIGS) solar battery buffer layer |
| US20140134784A1 (en) * | 2012-11-13 | 2014-05-15 | Tsmc Solar Ltd. | Metal-based solution treatment of cigs absorber layer in thin-film solar cells |
-
2014
- 2014-12-10 CN CN201410758760.9A patent/CN105742401A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585140A (en) * | 2004-06-14 | 2005-02-23 | 王东生 | Multi-absorbing-layer solar battery and manufacturing method thereof |
| CN102110737A (en) * | 2009-12-29 | 2011-06-29 | 中国电子科技集团公司第十八研究所 | Method for preparing copper indium gallium selenide (CIGS) solar battery buffer layer |
| US20140134784A1 (en) * | 2012-11-13 | 2014-05-15 | Tsmc Solar Ltd. | Metal-based solution treatment of cigs absorber layer in thin-film solar cells |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107623046A (en) * | 2017-08-25 | 2018-01-23 | 中国科学院上海微系统与信息技术研究所 | CuInGaSe absorbed layer post-processing approach and the solar cell preparation method based on it |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kondrotas et al. | Sb2S3 solar cells | |
| Patel et al. | Numerical study of a high‑performance thin film CIGS solar cell with a-Si and MoTe2 hole transport layer | |
| US20140076392A1 (en) | Solar cell | |
| JP5873881B2 (en) | Photovoltaic power generation apparatus and manufacturing method thereof. | |
| KR102350885B1 (en) | Solar cell | |
| Kurokawa et al. | Fabrication of three-dimensional-structure solar cell with Cu2ZnSnS4 | |
| TW201108425A (en) | Solar cell and fabrication method thereof | |
| CN104272469B (en) | Solar battery apparatus and its manufacture method | |
| CN112490315A (en) | Cadmium telluride solar cell and preparation method thereof | |
| CN114335348B (en) | PN heterojunction antimony selenide/perovskite solar cell and preparation method thereof | |
| KR101371859B1 (en) | Solar cell and method of fabricating the same | |
| Saha | A status review on Cu2ZnSn (S, Se) 4-based thin-film solar cells | |
| CN110611002A (en) | Preparation method of solar cell with P-doped Mo electrode | |
| Monnaf et al. | Design and simulation of Cu2SnSe3-based solar cells using various hole transport layer (HTL) for performance efficiency above 32% | |
| CN105914262A (en) | Film solar cell buffer layer postprocessing technology | |
| CN109638096A (en) | A kind of compound semiconductor thin film solar cell preparation method | |
| KR101067295B1 (en) | Photovoltaic Device And Manufacturing Method Thereof | |
| CN103339741B (en) | Solar cell device and its manufacture method | |
| Ziani et al. | Computer modeling zinc oxide/silicon heterojunction solar cells | |
| CN107039554A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method | |
| CN103469170B (en) | A kind of sputtering target for thin-film solar cells | |
| JP2017059656A (en) | Photoelectric conversion element and solar battery | |
| CN105742401A (en) | Preparation method of copper-indium-gallium-selenium (GIGS) film solar battery | |
| JP5881717B2 (en) | Solar cell and manufacturing method thereof | |
| CN112201702B (en) | Thin film solar cell absorption layer forming method, thin film solar cell and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Applicant after: Beijing Chong Yu Technology Co., Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Applicant before: Beijing Hanneng Chuangyu Technology Co., Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160706 |
|
| RJ01 | Rejection of invention patent application after publication |