CN105742369A - Novel bottom gate structured flexible thin film transistor and preparation method therefor - Google Patents
Novel bottom gate structured flexible thin film transistor and preparation method therefor Download PDFInfo
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- CN105742369A CN105742369A CN201610182132.XA CN201610182132A CN105742369A CN 105742369 A CN105742369 A CN 105742369A CN 201610182132 A CN201610182132 A CN 201610182132A CN 105742369 A CN105742369 A CN 105742369A
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- 239000010409 thin film Substances 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
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- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 56
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 56
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 51
- -1 polydimethylsiloxane Polymers 0.000 claims description 47
- 238000005507 spraying Methods 0.000 claims description 39
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 38
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 35
- 238000004528 spin coating Methods 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 23
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000006185 dispersion Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 10
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 239000003229 sclerosing agent Substances 0.000 claims description 5
- 238000002444 silanisation Methods 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 3
- 150000005846 sugar alcohols Polymers 0.000 claims description 3
- 238000001308 synthesis method Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 abstract description 7
- 239000002070 nanowire Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 36
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 30
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 16
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- 239000001267 polyvinylpyrrolidone Substances 0.000 description 11
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- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 8
- 239000011780 sodium chloride Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 101710134784 Agnoprotein Proteins 0.000 description 4
- 238000001027 hydrothermal synthesis Methods 0.000 description 4
- 229910001961 silver nitrate Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910007541 Zn O Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a novel bottom gate structured flexible thin film transistor and a preparation method therefor, and belongs to the technical field of a semiconductor thin film transistor. The thin film transistor comprises a flexible substrate, a gate electrode, an insulating layer, an active layer, a source electrode and a drain electrode from the bottom up in sequence, wherein the gate electrode, the source electrode and the drain electrode adopt silver nanowire thin films; and the insulating layer adopts a PMMA thin film. The thin film transistor provided by the invention adopts the PMMA as the insulating layer, and takes the Ag nanowire thin films as the conductive electrode layer; the characteristics of bending resistance and high insulation of the PMMA thin film, and the characteristics of bending resistance and high conductivity of the Ag nanowire thin films are utilized, so that the shortcoming that the thin film transistor is damaged easily under a bending condition is overcome; and therefore, the novel bottom gate structured flexible thin film transistor can be applied to the fields of large-area flexible display, electronic paper, sensors and the like.
Description
Technical field
The invention belongs to semiconductor thin-film transistor technical field, be specifically related to flexible thin-film transistor of a kind of novel bottom grating structure and preparation method thereof.
Background technology
Mos field effect transistor (MOSFET) can be divided into bottom grating structure and the big class of top gate structure two according to gate location difference, the feature of top gate structure is that grid is at top, although the source-drain electrode of this structure can adopt photoetching process to prepare high-precision raceway groove, but it is unfavorable for being formed the prolongation structure of grid, and the bending of grid structure may cause the dislocation of electrode and the contact area expanding position；The feature of bottom grating structure is that grid is deposited directly on substrate, the good contact of electrode and prolongation structure can be realized, and bottom grating structure thin film transistor (TFT) can first prepare insulating barrier, active layer and source-drain electrode is prepared in order further according to contact type, insulating barrier is carried out by preparation process process the flatness that can be effectively improved insulating barrier, it is made to form good contacting, the performance of optimised devices with active layer.
The metal electrodes such as the gold adopted in traditional thin film transistor (TFT) are prepared usually by the method for evaporation or electron beam evaporation, complex process, and cost is high；The metal oxide-type insulating barriers such as the aluminium oxide adopted are prepared usually by methods such as sputtering/alds, complex process, and cost is high, and metal oxide-type insulating layer material is frangible, limits its extensive use.Fast development along with flexible devices such as flexible wearable equipment, flexible sensors, base components transistor in semiconductor technology be it is also proposed higher requirement, therefore, if the thin film transistor (TFT) of flexibility can be prepared, to realizing the array of device, integrated, and the range of application widening flexible thin-film transistor has positive meaning.
Summary of the invention
The present invention is directed to the defect that background technology exists, it is proposed that flexible thin-film transistor of a kind of novel bottom grating structure and preparation method thereof.Thin film transistor (TFT) of the present invention adopts PMMA as insulating barrier, Ag nano wire film as conductive electrode layer, utilize the feature of the resistance to bending height insulation of PMMA thin film and the feature of the resistance to bending high conductivity of Ag nano wire film, overcome thin film transistor (TFT) flimsy defect when bending so that it is can apply to large area flexible show, the field such as Electronic Paper, sensor.
Technical scheme is as follows:
The flexible thin-film transistor of a kind of novel bottom grating structure, being followed successively by flexible substrate, gate electrode, insulating barrier, active layer and source-drain electrode, described gate electrode and source-drain electrode from bottom to top is nano silver wire thin film, and described insulating barrier is PMMA thin film.
Further, described flexible substrate is polydimethylsiloxane, polyimides, Kynoar, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene etc..
Further, described active layer is IGZO (In-Ga-Zn-O) thin film, ITZO (In-Ti-Zn-O) thin film, IAZO (In-Al-Zn-O) thin film etc..
Further, the thickness of described flexible substrate is 0.2～0.3mm, and the thickness of described gate electrode is 80～100nm, and the thickness of described insulating barrier is 500～800nm, and the thickness of described active layer is 70～100nm, and the thickness of described source-drain electrode is 80～100nm.
Further, described flexible substrate adopts spin-coating method to prepare, and described gate electrode adopts spraying process or spin-coating method to prepare, and described insulating barrier adopts spraying process or spin-coating method to prepare, described active layer adopts sputtering method to prepare, and described source-drain electrode adopts spraying process or spin-coating method to prepare.
The preparation method of the flexible thin-film transistor of a kind of novel bottom grating structure, comprises the following steps:
Step 1: preparation flexible substrate, cleans standby；
Step 2: prepare nano silver wire thin film in the flexible substrate that step 1 obtains, as gate electrode；
Step 3: prepare polymethyl methacrylate (PMMA) on the gate electrode that step 2 obtains, as insulating barrier；
Step 4: adopt magnetron sputtering method to prepare active layer on the insulating barrier that step 3 obtains；
Step 5: prepare nano silver wire thin film on the active layer that step 4 obtains, as source-drain electrode.
Further, flexible substrate described in step 1 is polydimethylsiloxane, polyimides, Kynoar, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene etc.；Wherein, the detailed process preparing polydimethylsiloxane flexible substrate is: the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio mixed, under the vacuum environment of 0.1Torr, place 10～30min to remove bubble, obtain polydimethylsiloxane spin coating liquid；Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment；Finally the dry 1～3h at 60～80 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under polydimethylsiloxanefilm film after curing molding is peeled off, carry out plasma oxygen process and make its surface hydrophilic, the polydimethylsiloxane flexible substrate that thickness is 0.2～0.3mm can be obtained.
Further, the preparation process of nano silver wire thin film gate electrode described in step 2 is particularly as follows: first, adopt liquid phase polyhydric alcohol synthesis method for preparing silver nano wire mixed liquor, in the nano silver wire mixed liquor obtained add volume be nano silver wire mixed liquor 3～5 times acetone after mix homogeneously, it is then centrifuged for separating, the nano silver wire obtained adds in the dispersion solvents such as ethanol, acetone or deionized water after taking out, ultrasonic obtaining stable nano silver wire dispersion liquid, the mass concentration of described nano silver wire dispersion liquid is 5～10mg/mL；The nano silver wire dispersion liquid upper step obtained adds in ink-jet printer, flexible substrate after step 1 being cleaned is placed on warm table, the temperature regulating warm table is 80～120 DEG C, spraying nano silver wire, the nano silver wire thin film of patterning can be obtained on flexible substrates, then anneal 1～2h at 120 DEG C of temperature, can obtain the nano silver wire gate electrode that thickness is 80～100nm.
Further, the detailed process of described employing liquid phase polyhydric alcohol synthesis method for preparing silver nano wire mixed liquor is: prepare the silver nitrate (AgNO of 0.1～0.5mol/L respectively3) ethylene glycol solution, the ethylene glycol solution of polyvinylpyrrolidone (PVP) (molecular weight is 30000) of 0.15～0.5mol/L, 0.0014～0.01mol/L the ethylene glycol solution of sodium chloride (NaCl)；Above-mentioned three kinds of solution are mixed and stirred for after uniformly, are transferred in teflon-lined reactor, hydro-thermal reaction 2～4h at 140～180 DEG C of temperature, obtain nano silver wire mixed liquor.
Further, first the preparation process of PMMA insulating barrier described in step 3 particularly as follows: prepare polymethyl methacrylate spray coating liquor, adopt polymethyl methacrylate (molecular weight is 120000) as solute, methyl phenyl ethers anisole, chloroform etc. are as solvent, and preparation obtains the polymethyl methacrylate spray coating liquor that mass concentration is 100mg/mL；Above-mentioned polymethyl methacrylate spray coating liquor is added in ink-jet printer, the flexible substrate with gate electrode step 2 obtained is placed on warm table, the temperature regulating warm table is 80～100 DEG C, spraying polymethyl methacrylate, PMMA can be obtained on gate electrode, then anneal 1～2h at 100～120 DEG C of temperature, obtains the PMMA thin film that thickness is 500～800nm, is insulating barrier.
Further, active layer described in step 4 is IGZO thin film, ITZO thin film, IAZO thin film etc., wherein, when adopting magnetron sputtering method to prepare IGZO thin film, sputtering target material is the metal targets of mol ratio In:Ga:Zn=1:1:1, sputter temperature is 20～50 DEG C, sputtering voltage is the DC voltage of 210～240V, sputtering atmosphere is the mixing gas of oxygen and argon, the flow-rate ratio of described oxygen and argon is (1～10): 100, sputtering pressure is 2～4mTorr, and the thickness of the IGZO thin film that sputtering obtains is 70～100nm.
Further, the preparation process of nano silver wire thin film described in step 5 is identical with the preparation process of step 2 silver nanoparticle thin film.
The invention have the benefit that the present invention adopt the fexible films such as PDMS as flexible substrate, PMMA as insulating barrier, nano silver wire thin film as electrode layer, PMMA, PDMS have bigger toughness and Young's modulus, make the bend resistance of the thin film transistor (TFT) prepared functional and foldable plastic substrate can realize good combination, can be applicable to large area flexible show, the field such as Electronic Paper, sensor, widened the range of application of thin film transistor (TFT)；The present invention adopts spin-coating method to prepare flexible substrate, spraying process or spin-coating method to prepare insulating barrier, gate electrode, source-drain electrode, and technique is simple, and cost is low, it may be achieved large-scale industrial production.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flexible thin-film transistor of the novel bottom grating structure of the present invention；Wherein, 1 is top layer PDMS cover layer, and 2 is source-drain electrode layer, and 3 is active layer, and 4 is insulating barrier, and 5 is gate electrode, and 6 is flexible substrate；
Fig. 2 be the flexible thin-film transistor of the novel bottom grating structure of the present invention unencapsulated time top view；Wherein, 2 is source-drain electrode, and 5 is gate electrode, and 6 is flexible substrate；
Fig. 3 is the preparation method flow chart of the flexible thin-film transistor of the novel bottom grating structure of the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples in detail, technical scheme is described in detail.
The flexible thin-film transistor of a kind of novel bottom grating structure, is followed successively by the source-drain electrode of polydimethylsiloxane flexible substrate, the gate electrode of nano silver wire thin film formation, PMMA insulating barrier, the active layer of IGZO thin film formation, the formation of nano silver wire thin film from bottom to top；The thickness of described flexible substrate is 0.2～0.3mm, and the thickness of described gate electrode is 80～100nm, and the thickness of described insulating barrier is 500～800nm, and the thickness of described active layer is 70～100nm, and the thickness of described source-drain electrode is 80～100nm.
The preparation method of the flexible thin-film transistor of a kind of novel bottom grating structure, comprises the following steps:
Step 1, employing spin-coating method prepare polydimethylsiloxane flexible substrate: the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio mixed, under the vacuum environment of 0.1Torr, place 10～30min to remove bubble, obtain polydimethylsiloxane spin coating liquid；Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment；The glass substrate with polydimethylsiloxane after spin coating dry 1～3h at 60～80 DEG C of temperature is carried out curing molding, under polydimethylsiloxanefilm film after curing molding is peeled off, carry out plasma oxygen process and make its surface hydrophilic, the polydimethylsiloxane flexible substrate that thickness is 0.2～0.3mm can be obtained；The polydimethylsiloxanefilm film obtained after finally being processed by upper step plasma oxygen cleans 15min in isopropanol, acetone and deionized water for ultrasonic successively, to remove dirt and the impurity on its surface；
Step 2, employing spraying process prepare nano silver wire thin film, as gate electrode: first, prepare the silver nitrate (AgNO of 0.1～0.5mol/L respectively3) ethylene glycol solution, the ethylene glycol solution of polyvinylpyrrolidone (PVP) (molecular weight is 30000) of 0.15～0.5mol/L, 0.0014～0.01mol/L the ethylene glycol solution of sodium chloride (NaCl)；Above-mentioned three kinds of solution are mixed and stirred for after uniformly, are transferred in teflon-lined reactor, hydro-thermal reaction 2～4h at 140～180 DEG C of temperature, obtain nano silver wire mixed liquor；In the nano silver wire mixed liquor that upper step obtains add volume be nano silver wire mixed liquor 3～5 times acetone after mix homogeneously, pour in centrifuge tube, centrifugal treating 20～30min under 3000～5000rpm, repeat 3～5 times, the impurity such as the PVP in removing dispersion liquid, it is subsequently adding deionized water centrifugal treating, obtains nano silver wire precipitation；The nano silver wire that obtains adds in 50～100mL ethanol after taking out, and ultrasonic obtains stable nano silver wire dispersion liquid, and the mass concentration of described nano silver wire dispersion liquid is 5～10mg/mL；The nano silver wire dispersion liquid upper step obtained adds in ink-jet printer, flexible substrate after step 1 being cleaned is placed on warm table, the temperature regulating warm table is 80～120 DEG C, spraying nano silver wire, the nano silver wire thin film of patterning can be obtained on flexible substrates, then anneal 1～2h at 120 DEG C of temperature, can obtain the nano silver wire gate electrode that thickness is 80～100nm；
Step 3, employing spraying process prepare polymethyl methacrylate (PMMA) insulating barrier: first preparation polymethyl methacrylate spray coating liquor, adopt polymethyl methacrylate (molecular weight is 120000) as solute, methyl phenyl ethers anisole, chloroform etc. are as solvent, and preparation obtains the polymethyl methacrylate spray coating liquor that mass concentration is 100mg/mL；Above-mentioned polymethyl methacrylate spray coating liquor is added in ink-jet printer, the flexible substrate with gate electrode step 2 obtained is placed on warm table, the temperature regulating warm table is 80～100 DEG C, spraying polymethyl methacrylate, PMMA can be obtained on gate electrode, then anneal 1～2h at 100～120 DEG C of temperature, obtains the PMMA thin film that thickness is 500～800nm, is insulating barrier；
Step 4, employing magnetron sputtering method prepare IGZO thin film on the insulating barrier that step 3 obtains, as active layer；Wherein, sputtering target material is the metal targets of mol ratio In:Ga:Zn=1:1:1, sputter temperature is 20～50 DEG C, sputtering voltage is the DC voltage of 210～240V, sputtering atmosphere is the mixing gas of oxygen and argon, the flow-rate ratio of described oxygen and argon is (1～10): 100, and sputtering pressure is 2～4mTorr, and the thickness of the IGZO thin film that sputtering obtains is 70～100nm；
The spraying process that step 5, employing and step 2 are identical prepares the nano silver wire thin film that thickness is 80～100nm, as source-drain electrode；Thin film transistor (TFT) of the present invention can be obtained.
Embodiment 1
The preparation method of the flexible thin-film transistor of a kind of novel bottom grating structure, comprises the following steps:
Step 1, employing spin-coating method prepare polydimethylsiloxane flexible substrate: the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio mixed, under the vacuum environment of 0.1Torr, place 30min to remove bubble, obtain polydimethylsiloxane spin coating liquid；Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment；The glass substrate with polydimethylsiloxane after spin coating dry 3h at 80 DEG C of temperature is carried out curing molding, under polydimethylsiloxanefilm film after curing molding is peeled off, carry out plasma oxygen process and make its surface hydrophilic, the polydimethylsiloxane flexible substrate that thickness is 0.2mm can be obtained；The polydimethylsiloxanefilm film obtained after finally being processed by upper step plasma oxygen cleans 15min in isopropanol, acetone and deionized water for ultrasonic successively, to remove dirt and the impurity on its surface；
Step 2, employing spraying process prepare nano silver wire thin film, as gate electrode: first, prepare the silver nitrate (AgNO of 0.1mol/L respectively3) ethylene glycol solution, the ethylene glycol solution of polyvinylpyrrolidone (PVP) (molecular weight is 30000) of 0.15mol/L, 0.0014mol/L the ethylene glycol solution of sodium chloride (NaCl)；Above-mentioned three kinds of solution are mixed and stirred for after uniformly, are transferred in teflon-lined reactor, hydro-thermal reaction 2h at 160 DEG C of temperature, obtain nano silver wire mixed liquor；In the nano silver wire mixed liquor that upper step obtains add volume be nano silver wire mixed liquor 3 times acetone after mix homogeneously, pour in centrifuge tube, centrifugal treating 20min under 5000rpm, repeat 3～5 times, the impurity such as the PVP in removing dispersion liquid, it is subsequently adding deionized water centrifugal treating, obtains nano silver wire precipitation；The nano silver wire that obtains adds in 50mL ethanol after taking out, and ultrasonic obtains stable nano silver wire dispersion liquid, and the mass concentration of described nano silver wire dispersion liquid is 5mg/mL；The nano silver wire dispersion liquid upper step obtained adds in ink-jet printer, flexible substrate after step 1 being cleaned is placed on warm table, employing mask plate blocks, the temperature regulating warm table is 80 DEG C, sprays nano silver wire, can obtain the nano silver wire thin film of patterning on flexible substrates, then anneal 1h at 120 DEG C of temperature, to reduce the contact resistance between nano silver wire, improving electric conductivity, the nano silver wire gate electrode thickness obtained is 100nm；
Step 3, employing spraying process prepare polymethyl methacrylate (PMMA) insulating barrier: first preparation polymethyl methacrylate spray coating liquor, adopt polymethyl methacrylate (molecular weight is 120000) as solute, methyl phenyl ethers anisole is as solvent, and preparation obtains the polymethyl methacrylate spray coating liquor that mass concentration is 100mg/mL；Above-mentioned polymethyl methacrylate spray coating liquor is added in ink-jet printer, the flexible substrate with gate electrode step 2 obtained is placed on warm table, the temperature regulating warm table is 80 DEG C, spraying polymethyl methacrylate, PMMA can be obtained on gate electrode, then anneal 2h at 100 DEG C of temperature, obtains the PMMA thin film that thickness is 800nm, is insulating barrier；
Step 4, employing magnetron sputtering method prepare IGZO thin film on the insulating barrier that step 3 obtains, as active layer；Wherein, sputtering target material is the metal targets of mol ratio In:Ga:Zn=1:1:1, sputter temperature is 25 DEG C, sputtering voltage is the DC voltage of 210V, sputtering atmosphere is the mixing gas of oxygen and argon, the flow-rate ratio of described oxygen and argon is 1:100, and sputtering pressure is 2mTorr, and the thickness of the IGZO thin film that sputtering obtains is about 80nm；
The spraying process that step 5, employing and step 2 are identical prepares the nano silver wire thin film that thickness is 100nm, as source-drain electrode；Thin film transistor (TFT) of the present invention can be obtained.
Embodiment 2
The preparation method of the flexible thin-film transistor of a kind of novel bottom grating structure, comprises the following steps:
Step 1, employing spin-coating method prepare polydimethylsiloxane flexible substrate: the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio mixed, under the vacuum environment of 0.1Torr, place 30min to remove bubble, obtain polydimethylsiloxane spin coating liquid；Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment；The glass substrate with polydimethylsiloxane after spin coating dry 3h at 80 DEG C of temperature is carried out curing molding, under polydimethylsiloxanefilm film after curing molding is peeled off, carry out plasma oxygen process and make its surface hydrophilic, the polydimethylsiloxane flexible substrate that thickness is 0.2mm can be obtained；The polydimethylsiloxanefilm film obtained after finally being processed by upper step plasma oxygen cleans 15min in isopropanol, acetone and deionized water for ultrasonic successively, to remove dirt and the impurity on its surface；
Step 2, employing spraying process prepare nano silver wire thin film, as gate electrode: first, prepare the silver nitrate (AgNO of 0.1mol/L respectively3) ethylene glycol solution, the ethylene glycol solution of polyvinylpyrrolidone (PVP) (molecular weight is 30000) of 0.15mol/L, 0.0014mol/L the ethylene glycol solution of sodium chloride (NaCl)；Above-mentioned three kinds of solution are mixed and stirred for after uniformly, are transferred in teflon-lined reactor, hydro-thermal reaction 2h at 160 DEG C of temperature, obtain nano silver wire mixed liquor；In the nano silver wire mixed liquor that upper step obtains add volume be nano silver wire mixed liquor 3 times acetone after mix homogeneously, pour in centrifuge tube, centrifugal treating 20min under 5000rpm, repeat 3～5 times, the impurity such as the PVP in removing dispersion liquid, it is subsequently adding deionized water centrifugal treating, obtains nano silver wire precipitation；The nano silver wire that obtains adds in 50mL acetone after taking out, and ultrasonic obtains stable nano silver wire dispersion liquid, and the mass concentration of described nano silver wire dispersion liquid is 5mg/mL；The nano silver wire dispersion liquid upper step obtained adds in ink-jet printer, flexible substrate after step 1 being cleaned is placed on warm table, employing mask plate blocks, the temperature regulating warm table is 80 DEG C, sprays nano silver wire, can obtain the nano silver wire thin film of patterning on flexible substrates, then anneal 2h at 120 DEG C of temperature, to reduce the contact resistance between nano silver wire, improving electric conductivity, the nano silver wire gate electrode thickness obtained is 100nm；
Step 3, employing spraying process prepare polymethyl methacrylate (PMMA) insulating barrier: first preparation polymethyl methacrylate spray coating liquor, adopt polymethyl methacrylate (molecular weight is 120000) as solute, chloroform is as solvent, and preparation obtains the polymethyl methacrylate spray coating liquor that mass concentration is 100mg/mL；Above-mentioned polymethyl methacrylate spray coating liquor is added in ink-jet printer, the flexible substrate with gate electrode step 2 obtained is placed on warm table, the temperature regulating warm table is 80 DEG C, spraying polymethyl methacrylate, PMMA can be obtained on gate electrode, then anneal 2h at 100 DEG C of temperature, obtains the PMMA thin film that thickness is 800nm, is insulating barrier；
Step 4, employing magnetron sputtering method prepare IGZO thin film on the insulating barrier that step 3 obtains, as active layer；Wherein, sputtering target material is the metal targets of mol ratio In:Ga:Zn=1:1:1, sputter temperature is 30 DEG C, sputtering voltage is the DC voltage of 240V, sputtering atmosphere is the mixing gas of oxygen and argon, the flow-rate ratio of described oxygen and argon is 10:100, and sputtering pressure is 3mTorr, and the thickness of the IGZO thin film that sputtering obtains is about 100nm；
The spraying process that step 5, employing and step 2 are identical prepares the nano silver wire thin film that thickness is 100nm, as source-drain electrode；Thin film transistor (TFT) of the present invention can be obtained.
Claims (10)
1. a flexible thin-film transistor for novel bottom grating structure, being followed successively by flexible substrate, gate electrode, insulating barrier, active layer and source-drain electrode, described gate electrode and source-drain electrode from bottom to top is nano silver wire thin film, and described insulating barrier is PMMA thin film.
2. the flexible thin-film transistor of novel bottom grating structure according to claim 1, it is characterized in that, described flexible substrate is polydimethylsiloxane, polyimides, Kynoar, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene.
3. the flexible thin-film transistor of novel bottom grating structure according to claim 1, it is characterised in that described active layer is IGZO thin film, ITZO thin film, IAZO thin film.
4. the flexible thin-film transistor of novel bottom grating structure according to claim 1, it is characterized in that, the thickness of described flexible substrate is 0.2～0.3mm, the thickness of described gate electrode is 80～100nm, the thickness of described insulating barrier is 500～800nm, the thickness of described active layer is 70～100nm, and the thickness of described source-drain electrode is 80～100nm.
5. the flexible thin-film transistor of novel bottom grating structure according to claim 1, it is characterized in that, described flexible substrate adopts spin-coating method to prepare, described gate electrode adopts spraying process or spin-coating method to prepare, described insulating barrier adopts spraying process or spin-coating method to prepare, described active layer adopts sputtering method to prepare, and described source-drain electrode adopts spraying process or spin-coating method to prepare.
6. a preparation method for the flexible thin-film transistor of novel bottom grating structure, comprises the following steps:
Step 1: preparation flexible substrate, cleans standby；
Step 2: prepare nano silver wire thin film in the flexible substrate that step 1 obtains, as gate electrode；
Step 3: prepare polymethyl methacrylate on the gate electrode that step 2 obtains, as insulating barrier；
Step 4: adopt magnetron sputtering method to prepare active layer on the insulating barrier that step 3 obtains；
Step 5: prepare nano silver wire thin film on the active layer that step 4 obtains, as source-drain electrode.
7. the preparation method of the flexible thin-film transistor of novel bottom grating structure according to claim 6, it is characterized in that, flexible substrate described in step 1 is polydimethylsiloxane, polyimides, Kynoar, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene；Wherein, the detailed process preparing polydimethylsiloxane flexible substrate is: the ratio of polydimethylsiloxane host and sclerosing agent 10:1 in mass ratio mixed, and places 10～30min, obtain polydimethylsiloxane spin coating liquid under the vacuum environment of 0.1Torr；Then the above-mentioned polydimethylsiloxane spin coating liquid of spin coating on the glass substrate after silanization treatment；Finally the dry 1～3h at 60～80 DEG C of temperature of the glass substrate with polydimethylsiloxane after spin coating is carried out curing molding, under polydimethylsiloxanefilm film after curing molding is peeled off, carry out plasma oxygen process and make its surface hydrophilic, the polydimethylsiloxane flexible substrate that thickness is 0.2～0.3mm can be obtained.
8. the preparation method of the flexible thin-film transistor of novel bottom grating structure according to claim 6, it is characterized in that, the preparation process of nano silver wire thin film gate electrode described in step 2 is particularly as follows: first, adopt liquid phase polyhydric alcohol synthesis method for preparing silver nano wire mixed liquor, in the nano silver wire mixed liquor obtained add volume be nano silver wire mixed liquor 3～5 times acetone after mix homogeneously, it is then centrifuged for separating, the nano silver wire obtained adds ethanol after taking out, in acetone or deionized water dispersion solvent, ultrasonic obtain stable nano silver wire dispersion liquid, the mass concentration of described nano silver wire dispersion liquid is 5～10mg/mL；The nano silver wire dispersion liquid upper step obtained adds in ink-jet printer, flexible substrate after step 1 being cleaned is placed on warm table, the temperature regulating warm table is 80～120 DEG C, spraying nano silver wire, the nano silver wire thin film of patterning can be obtained on flexible substrates, then anneal 1～2h at 120 DEG C of temperature, can obtain the nano silver wire gate electrode that thickness is 80～100nm.
9. the preparation method of the flexible thin-film transistor of novel bottom grating structure according to claim 6, it is characterized in that, first the preparation process of PMMA insulating barrier described in step 3 particularly as follows: prepare polymethyl methacrylate spray coating liquor, adopt polymethyl methacrylate as solute, methyl phenyl ethers anisole or chloroform are as solvent, and preparation obtains the polymethyl methacrylate spray coating liquor that mass concentration is 100mg/mL；Above-mentioned polymethyl methacrylate spray coating liquor is added in ink-jet printer, the flexible substrate with gate electrode step 2 obtained is placed on warm table, the temperature regulating warm table is 80～100 DEG C, spraying polymethyl methacrylate, PMMA can be obtained on gate electrode, then anneal 1～2h at 100～120 DEG C of temperature, obtains the PMMA thin film that thickness is 500～800nm, is insulating barrier.
10. the preparation method of the flexible thin-film transistor of novel bottom grating structure according to claim 6, it is characterized in that, active layer described in step 4 is IGZO thin film, ITZO thin film, IAZO thin film, wherein, when adopting magnetron sputtering method to prepare IGZO thin film, sputtering target material is the metal targets of mol ratio In:Ga:Zn=1:1:1, sputter temperature is 20～50 DEG C, sputtering voltage is the DC voltage of 210～240V, sputtering atmosphere is the mixing gas of oxygen and argon, the flow-rate ratio of described oxygen and argon is (1～10): 100, sputtering pressure is 2～4mTorr, the thickness of the IGZO thin film that sputtering obtains is 70～100nm.
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Application publication date: 20160706 |