CN105742311A - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereof Download PDFInfo
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- CN105742311A CN105742311A CN201410765803.6A CN201410765803A CN105742311A CN 105742311 A CN105742311 A CN 105742311A CN 201410765803 A CN201410765803 A CN 201410765803A CN 105742311 A CN105742311 A CN 105742311A
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Abstract
The invention relates to the display device. The display device comprises a first electrode layer arranged on a substrate, multiple pixel limitation layers, and an organic luminescent layer and a second electrode layer which are formed between the pixel limitation layers, wherein the pixel limitation layers comprises a first pixel limitation layer and a second pixel limitation layer, a conduction film layer is formed between the first pixel limitation layer and the second pixel limitation layer, and the second electrode layer is electrically communicated with the conduction film layer. The display device employs a double-layer conduction film layer structure, fluctuation height of the second electrode can be effectively reduced to guarantee flattening of an OLED cathode film layer structure, and a fracture problem of the second electrode layer can be effectively avoided.
Description
Technical field
The present invention relates to a kind of display device, the preparation method that the invention still further relates to this display device.
Background technology
(English full name is organiclightingemittingdisplay to organic luminescent device, it is called for short OLED) there is the advantages such as active illuminating, colour gamut width, response fast, visual angle is wide, contrast is high, planarization, it is the development trend of display of future generation and lighting engineering.
Organic light emitting display includes anode layer, luminescent layer and cathode layer, in OLED, cathode layer is all made by CommonMetalMask (common metal mask) at present, additionally, due to the impact of pixel confining layers (Pillar layer) height, therefore cathode film layer presents the state of fluctuating continuously；Pressing and actual application are likely to occur the bad phenomenon such as fracture, abrasion.It is illustrated in fig. 1 shown below: described OLED includes anode layer 100, pixel confining layers (pillar layer) 600, organic layer 400 and cathode layer 200, shown in Fig. 2-1 and Fig. 2-2, described cathode film layer unduation grade is higher, is likely to occur the bad phenomenon such as fracture, abrasion in pressing and actual application.Suitably being adjusted the angle A of Pillar by technique so that the unduation grade of OLED cathode film layer reduces, but the space improved is less, effect neither be highly desirable.
CN201210168816.6 discloses a kind of display unit, and this display unit is prevented from the fracture of the second electrode, and reduces the leakage current by organic layer.This display unit includes the multiple organic luminescent devices on planar substrates.Each of the plurality of organic luminescent device has the first electrode successively, have the dielectric film of opening corresponding to the first electrode, at least formed at organic layer that is on the first electrode in opening and that be made up of the multiple layers including luminescent layer and the second electrode.Dielectric film has low tapered portion in the part around opening, the inclination angle that this low tapered portion is formed by the plane of the side of opening Yu substrate, and this inclination angle is less than the inclination angle of the other parts of the surrounding of opening.The prior art prevents the fracture of the second electrode only with reducing dielectric film opening tapering, but owing to the space between the second electrode and organic luminous layer makes the second electrode be susceptible to fracture.
Summary of the invention
The technical problem to be solved is in that the problems such as the second electrode of existing display device is easily broken off, thus providing a kind of display, it adopts bilayer conductive film layer structure, effectively reduce the relief height of the second electrode to ensure that OLED cathode film layer structure planarizes, thus effectively prevent the breakage problem of the second electrode lay.
For solving above-mentioned technical problem, the present invention is achieved by the following technical solutions:
Between adjacent described pixel confining layers, organic luminous layer and the second electrode lay are set, each described pixel confining layers includes the first pixel confining layers and is arranged on the second pixel confining layers above the first pixel confining layers, it is provided with conductive film layer, electric connection between described the second electrode lay and described conductive film layer between described first pixel confining layers and described second pixel confining layers.
Described the second electrode lay is arranged on described organic luminous layer.
The thickness of described first insulating barrier is more than the thickness of described organic luminous layer, and the thickness of described first insulating barrier is 350-450nm.The thickness of described organic luminous layer is 250-3503nm.
The thickness of described conductive film layer is 30nm-500nm.
Described first electrode layer is anode layer, and the second electrode lay is cathode layer.
The thickness of described cathode layer is 17-23nm.
The preparation method of a kind of display device, it is characterised in that comprise the steps:
S1, making the first pixel confining layers on the first electrode layer successively, make organic luminous layer by being deposited with mode between the first pixel confining layers, the thickness of described organic luminous layer is less than the thickness of the first pixel confining layers；
S2, deposition make conductive film layer and the second pixel confining layers, after the graphical conductive film layer removed above organic luminous layer, make the second electrode lay by evaporation mode, and described the second electrode lay is connected with conductive film layer, it is achieved electric connection.Precision metallic mask plate FineMetalMask mode is adopted to be deposited with organic luminous layer and the second electrode lay respectively.
The technique scheme of the present invention has the advantage that compared to existing technology
(1) the pixel confining layers that display device provided by the invention adopts includes the first pixel confining layers and the second pixel confining layers, it is provided with conductive film layer, electric connection between described the second electrode lay and described conductive film layer between described first pixel confining layers and described second pixel confining layers (Pillar layer).Pillar Rotating fields is designed as Pillar+ conductive layer+Pillar (double-deck Pillar structure) by the present invention; by ground floor Pillar, the upper relief height reducing OLED cathode film layer largely drops; additionally conductive film layer realizes the connection of whole negative electrode; to ensure that OLED cathode film layer structure planarizes, second layer Pillar plays support, protective effect.Therefore the continuous relief fabric of cathode layer can effectively be solved, and improves yield.
(2) owing to the display device of the present invention have employed double-deck Pillar structure, it is possible to that is done by negative electrode is thinner, and such light transmittance can be greatly increased, and can increase device brightness and light extraction efficiency；Total device resistance reduces, and power consumption reduces；Compared with conventional cathode, reach object brightness, it is necessary to less electric current and voltage, and OLED has the longer life-span under small area analysis and voltage.
(3) negative electrode can select electric conductivity to be not so good as Mg, Ag alloy, but more cheap cathode material, including, but are not limited to Al/LiF, AlLi alloy, the material such as Al/Ca, thus reducing cost；Negative electrode is subject to the protection of second layer Pillar, the bad phenomenon that will not cause because of the friction of cap.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is the structural representation of prior art；
Fig. 2-1 and Fig. 2-2 is the structural representation of prior art；
Fig. 3 is the structural representation of display device of the present invention；
Fig. 4-8 is display device manufacturing process schematic diagram of the present invention.
In figure, accompanying drawing labelling is expressed as:
100-the first electrode layer, 200-the first pixel confining layers, 201-the second pixel confining layers, 300-conductive film layer, 400-organic layer, 500-the second electrode lay, 600-pixel confining layers.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.On the contrary, it is provided that these embodiments so that the disclosure will be thorough and complete, and the design of the present invention being fully conveyed to those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.It should be appreciated that when element such as layer, region or substrate be referred to as " formed exist " or " being arranged on " another element " on " time, this element can be arranged directly on another element described, or can also there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, it is absent from intermediary element.
With reference to Fig. 3, the display device of the present invention, including substrate (not shown), it is arranged on the first electrode layer 100 on substrate and is arranged on the some pixel confining layers on described first electrode layer 100, between adjacent described pixel confining layers, organic luminous layer 400 and the second electrode lay 500 are set, each described pixel confining layers 600 includes the first pixel confining layers 200 and the second pixel confining layers 201, it is provided with conductive film layer 300 between described first pixel confining layers 200 and described second pixel confining layers 201, electric connection between described the second electrode lay 500 and described conductive film layer 300.Described the second electrode lay 500 is located on described organic luminous layer 400.The thickness of described first insulating barrier 200 is slightly larger than the thickness of described organic luminous layer 400.The thickness of described first insulating barrier 200 is 350-450nm, and the thickness of described organic luminous layer 400 is 250-350nm.The thickness of described conductive film layer 300 is 30nm-500nm.Described first electrode layer 100 is anode layer, and the second electrode lay 500 is cathode layer, and the thickness of described cathode layer is 17-23nm.
The display device substrate of the present invention, the first electrode layer 100, pixel confining layers 600 and organic luminous layer are the ordinary skill in the art, and the material of employing is also the conventional material of this area.Described organic luminous layer 400 includes but not limited to hole injection layer, hole transmission layer, organic luminous layer and electron transfer layer.Described hole injection layer is formed on the first described electrode layer 100, described hole transmission layer is formed on described hole injection layer, described the second electrode lay 500 is formed on described electron transfer layer, being multiple luminescent layer between described hole transmission layer and described electron transfer layer, described luminescent layer includes red light emitting layer, green light emitting layer and blue light-emitting layer.
Substrate in the present invention can be glass substrate, it is also possible to for polymeric substrates.The first described pixel confining layers 200 and the second pixel confining layers 201 can be identical or different material, point preferably employ polyimides and prepare.Described conductive film layer 300 is that the metal material adopted includes, but are not limited to the conductive metallic materials such as silver, gold, copper, aluminum, molybdenum, and film includes continuous metal film or nano wire film；Or non-metallic conducting material includes, but are not limited to the good materials of electric conductivity such as Graphene, carbon nano-tube film, conducting polymer, ITO, IZGO.
A kind of method preparing described display device, comprises the steps: referring to Fig. 4-8
S1, making the first pixel confining layers 200 on the first electrode layer 100 successively, make organic luminous layer 400 by being deposited with mode between the first pixel confining layers 200, the thickness of described organic luminous layer 400 is less than the thickness of the first pixel confining layers 200, referring to Fig. 7.
S2, made conductive film layer 300 and the second pixel confining layers 201 by evaporation mode, after the graphical conductive film layer removed above organic luminous layer 400, making the second electrode lay 500 by evaporation mode, described the second electrode lay 500 is connected with conductive film layer 300, it is achieved electric connection.
Described conductive film layer 300 is to utilize evaporation, sputtering or other deposition process to form a layer thickness for metal conductive film thick for 30nm-500nm, metal material includes, but are not limited to the conductive metallic materials such as silver, gold, copper, aluminum, molybdenum herein, and film includes continuous metal film or nano wire film；Or non-metallic conducting material includes, but are not limited to the good materials of electric conductivity such as Graphene, carbon nano-tube film, conducting polymer, ITO, IZGO；
FineMetalMask (precision metallic mask plate mode) is adopted to be deposited with formation organic luminous layer 400 and the second electrode lay 500 respectively.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.And the apparent change thus extended out or variation are still among the protection domain of the invention.
Claims (10)
1. a display device, including substrate, the first electrode layer (100) on the substrate is set and is arranged on the some pixel confining layers on described first electrode layer (100), organic luminous layer (400) and the second electrode lay (500) are set between adjacent described pixel confining layers, it is characterized in that, each described pixel confining layers includes the first pixel confining layers (200) and is arranged on the second pixel confining layers (201) of the first pixel confining layers (200) top, it is provided with conductive film layer (300) between described first pixel confining layers (200) and described second pixel confining layers (201), electric connection between described the second electrode lay (500) and described conductive film layer (300).
2. a kind of display device according to claim 1, it is characterised in that described the second electrode lay (500) is located on described organic luminous layer (400).
3. a kind of display device according to claim 1, it is characterised in that the thickness of described first insulating barrier (200) is more than the thickness of described organic luminous layer (400).
4. a kind of display device according to claim 3, it is characterised in that the thickness of described first insulating barrier (200) is 350-450nm.
5. a kind of display device according to claim 4, it is characterised in that the thickness of described organic luminous layer (400) is 250-350nm.
6. a kind of display device according to claim 1, it is characterised in that the thickness of described conductive film layer (300) is 30nm-500nm.
7. a kind of display device according to claim 1, it is characterised in that described first electrode layer (100) is anode layer, and the second electrode lay (500) is cathode layer.
8. a kind of display device according to claim 7, it is characterised in that the thickness of described cathode layer is 17-23nm.
9. the preparation method of a display device, it is characterised in that comprise the steps:
S1, on the first electrode layer (100), make the first pixel confining layers (200) successively, making organic luminous layer (400) between the first pixel confining layers (200) by being deposited with mode, the thickness of described organic luminous layer (400) is less than the thickness of the first pixel confining layers (200)；
S2, making conductive film layer (300) and the second pixel confining layers (201), after graphically removing the conductive film layer of organic luminous layer (400) top, the second electrode lay (500) is made by evaporation mode, described the second electrode lay (500) is connected with conductive film layer (300), it is achieved electric connection.
10. the preparation method of display device according to claim 9, it is characterised in that adopt precision metallic mask plate mode to be deposited with organic luminous layer (400) and the second electrode lay (500) respectively.
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| WO2018018895A1 (en) * | 2016-07-29 | 2018-02-01 | 京东方科技集团股份有限公司 | Oled array substrate and method for manufacturing same, and oled display panel |
| CN109285865A (en) * | 2018-09-17 | 2019-01-29 | 京东方科技集团股份有限公司 | A kind of display base plate and its manufacturing method, display device |
| US11476313B2 (en) | 2020-09-04 | 2022-10-18 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
| US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
| US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
| US11665931B2 (en) | 2021-08-04 | 2023-05-30 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
| WO2023125882A1 (en) * | 2021-12-31 | 2023-07-06 | 纳晶科技股份有限公司 | Display device and method for manufacturing display device |
| US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
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| US11610952B2 (en) | 2020-09-04 | 2023-03-21 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
| US11476313B2 (en) | 2020-09-04 | 2022-10-18 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
| US11690254B2 (en) | 2020-09-04 | 2023-06-27 | Applied Materials, Inc. | Methods of fabricating OLED panel with inorganic pixel encapsulating barrier |
| US11690255B2 (en) | 2020-09-04 | 2023-06-27 | Applied Materials, Inc. | OLED panel with inorganic pixel encapsulating barrier |
| US11910657B2 (en) | 2020-09-04 | 2024-02-20 | Applied Materials, Inc. | OLED panel with inorganic pixel encapsulating barrier |
| US11665931B2 (en) | 2021-08-04 | 2023-05-30 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
| WO2023125882A1 (en) * | 2021-12-31 | 2023-07-06 | 纳晶科技股份有限公司 | Display device and method for manufacturing display device |
| US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
| US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
| US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
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| CN105742311B (en) | 2018-11-13 |
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Denomination of invention: The invention relates to a display device and a preparation method thereof Effective date of registration: 20201221 Granted publication date: 20181113 Pledgee: Xin Xin Finance Leasing Co.,Ltd. Pledgor: KunShan Go-Visionox Opto-Electronics Co.,Ltd. Registration number: Y2020980009652 |