CN105732034A - Ultra-low-specific-resistance low-B-value NTC thermosensitive resistance material and preparation method thereof - Google Patents

Ultra-low-specific-resistance low-B-value NTC thermosensitive resistance material and preparation method thereof Download PDF

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CN105732034A
CN105732034A CN201610093845.9A CN201610093845A CN105732034A CN 105732034 A CN105732034 A CN 105732034A CN 201610093845 A CN201610093845 A CN 201610093845A CN 105732034 A CN105732034 A CN 105732034A
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张继华
王著搬
唐新宇
梁天鹏
黄佳鹏
张鹏
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University of Electronic Science and Technology of China
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C04B2235/3267—MnO2

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  • Thermistors And Varistors (AREA)
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Abstract

The invention belongs to the technical field of resistance materials and particularly relates to an ultra-low-specific-resistance low-B-value NTC thermosensitive resistance material and a preparation method thereof. The chemical constitution of the NTC thermosensitive resistance material meets the general formula: LaxSr1-xMnyO3, wherein x is larger than or equal to 0.3 and smaller than or equal to 0.8, y is larger than or equal to 0.6 and smaller than or equal to 1.2, raw materials are La2O3, SrCO3 and MnO2, the room temperature specific resistance is 0.2-0.3 omega.cm, and the B value 25/50 ranges from 230 K to 350 K. The ultra-low-specific-resistance low-B-value NTC thermosensitive resistance material is simple in preparation process, low in production cost and suitable for industrialized production, is made into an ultra-low-specific-resistance low-B-value thermosensitive resistor and meets the requirement for being applied to temperature measurement and mild temperature supplementation.

Description

A kind of super-low resistivity low B value NTC thermistor material and preparation method thereof
Technical field
The invention belongs to resistance material technical field, particularly relate to one and there is super-low resistivity low B value NTC Thermistor material and preparation method thereof.
Background technology
Critesistor refers to the resistance resistance material with temperature generation significant change, typically can divide by temperature coefficient The positive temperature coefficient PTC thermistor increased with the rising of temperature for resistance, resistance with temperature rising and The critical temperature that the negative temperature coefficient NTC thermistor reduced and resistance strongly reduce in specific range of temperatures Coefficient CTR critesistor.NTC thermistor has that temperature measurement accuracy is high, interchangeability is good and the high spy of reliability Point, temperature survey, control, the application of the aspect such as compensation quite varied.
The NTC thermistor material developed currently on the market is all based on low-resistance height B value or high resistant low B value Thermo-sensitive material, and the low-resistance NTC resistance on market, its room temperature resistivity is hundreds of k Ω cm, even Thousand of k more than Ω cm.
In terms of temperature-compensating, generally require low-resistivity low B value NTC thermistor material, such as design The microwave temperature compensated attenuator that a kind of attenuation varies with temperature, at the π type microwave that room temperature is little attenuation In the design of temperature compensation attenuator so that the attenuation of microwave temperature compensation attenuator, vary with temperature mild change Changing certain attenuation, needing the room temperature resistance designing NTC thermistor therein is tens ohm, uses Material thickness be several μm thick-film material to tens μm to design microwave temperature compensation attenuator, then need A kind of ultralow room temperature resistivity, and resistivity varies with temperature mild thermistor material and reaches design Requirement.
It is therefore desirable to develop a kind of can be used for hot environment, low cost, composition simple, have ultralow The NTC thermistor material of resistivity low B value.
Summary of the invention
For above-mentioned existing problems or deficiency, for realizing a kind of can be used for hot environment, low cost, composition Simply, and there is the NTC thermistor material of super-low resistivity low B value.The invention provides a kind of ultralow Resistivity low B value NTC thermistor material and preparation method thereof.
A kind of super-low resistivity low B value NTC thermistor material, its chemical composition meets formula: LaxSr1-xMnyO3, wherein 0.3≤x≤0.8,0.6≤y≤1.2, raw material is La2O3、SrCO3With MnO2, room temperature resistivity is 0.2～0.3 Ω cm, and B value 25/50 is in the range of 230K～350K.
Its preparation method, including step in detail below:
Step 1, according to formula LaxSr1-xMnyO3, wherein 0.3≤x≤0.8,0.6≤y≤1.2, Weigh La respectively2O3、SrCO3And MnO2Powder mixes, by mixed powder, mill dielectric material and dispersion Agent loads ball grinder and carries out a ball milling, and Ball-milling Time is 18-26 hour；
Step 2, powder body step 1 ground put into baking oven, and 103 DEG C dry 8-14 hour；
Step 3, dried powder are sent into sintering furnace and are calcined 2～4 hours at 700～1000 DEG C, then will Powder after calcining, mill dielectric material and dispersant load ball grinder and carry out secondary ball milling, ball milling 18-26 hour, And dry；
Step 4, by terpineol, castor oil hydrogenated, dicarboxylic acid dimethyl ester, ethyl cellulose and Tween 80, It is configured to organic carrier by the mass ratio of 45:1:10:3:1；
300 mesh sieves first crossed by step 5, powder step 3 prepared, then according to powder and the matter of organic carrier Amount ratio 1:1 or 1:2, adds in the organic carrier that step 4 prepares, and 85 DEG C of heating in water bath stir 8 hours, Prepare slurry；
Step 6, slurry agitation step 5 prepared are printed on Al by silk screen printing the most afterwards2O3Base On plate, 130 DEG C of drying, after printing and dry calculation one layer, need print 4-6 layer, printing molding after material Put in high temperature furnace, in 1100 DEG C～1350 DEG C, sinter 2～4 hours, make thick film ceramic, then Brush silver electrode, i.e. obtains super-low resistivity low B value NTC thermistor.
The mill dielectric material of described step 1 is zirconia ball or agate ball, and dispersant is deionized water.
In described step 1 and step 2 once with powder during secondary ball milling, mill dielectric material and the quality of dispersant Ratio is 1:2:3.
In described step 1 and step 3, the rotating speed of ball milling is 250r/min～300r/min.
The mesh mesh number of the silk screen printing in described step 6 is 300 mesh, and the gross thickness of thick film is 10 μm～16 μm。
The super-low resistivity low B value NTC thermal sensitive ceramic material that the present invention provides, its room temperature resistivity is 0.2～0.3 Ω cm, B value 25/50 scope is 230K～350K, and preparation technology is simple, produces into This is relatively low, is suitable for industrialized production, makes super-low resistivity low B value critesistor, meet in temperature survey And the application in mild temperature-compensating.
Accompanying drawing explanation
Fig. 1 is that embodiment gained thick film NTC thermal sensitive ceramics sample resistivity varies with temperature curve；
Fig. 2 is the pictorial diagram of the silk screen printing of embodiment gained thick film NTC sensitive ceramic resistor sample.
Detailed description of the invention
Utilize analytical balance by LaxSr1-xMnyO3Stoichiometry, accurately weighs La2O3For 9.9693g, SrCO3 For 0.6643g and MnO2For 1.0433g, by the total amount of said components and agate ball and deionized water, press weight Amount ratio 1:2:3 mixing loads ball grinder ball milling, and rotational speed of ball-mill is 250r/min, and Ball-milling Time is 24 little Time.
Putting the powder after ball milling into baking oven, 103 DEG C are dried 12 hours, put high temperature furnace after drying into, 850 DEG C Calcine 2.5 hours, then by agate ball and deionized water, load ball grinder by weight 1:2:3 mixing Secondary ball milling, rotating speed is 250r/min, and Ball-milling Time is 24 hours.
Preparation organic carrier, by terpineol, castor oil hydrogenated, dicarboxylic acid dimethyl ester, ethyl cellulose with tell Temperature 80, is configured to organic carrier by the mass ratio of 45:1:10:3:1；
Dry the powder obtained and first cross 300 mesh sieves, then according to the mass ratio 1:2 of powder and organic carrier, add Being added in organic carrier, 85 DEG C of heating in water bath stir 8 hours, prepare slurry；
By silk screen printing, slurry agitation is printed 5 layers the most afterwards, and thickness is 13.5 μm.At Al2O3Substrate On, 130 DEG C of drying, the material after molding, in high temperature furnace, sinters 2.5 hours in 1100 DEG C～1350 DEG C, Make thick-film thermistor, then brush silver electrode, i.e. obtain super-low resistivity low B value NTC thermistor.
Sample after sintering is as in figure 2 it is shown, thickness is 13.5 μm, and room temperature sheet resistance is 185.45 Ω, measures Its resistivity in 17.5 DEG C～120 DEG C of temperature ranges, sample room temperature resistivity is 0.25 Ω cm, with The increase of test temperature, sample resistivity, in slowly reducing trend, meets NTC characteristic, such as Fig. 1 institute Showing, B value 25/50 is 245K.

Claims (6)

1. a super-low resistivity low B value NTC thermistor material, it is characterised in that: chemical composition is full Foot formula LaxSr1-xMnyO3, wherein 0.3≤x≤0.8,0.6≤y≤1.2, raw material is La2O3、 SrCO3And MnO2；Room temperature resistivity is 0.2～0.3 Ω cm, B value 25/50 in the range of 230K～ 350K。
2. the preparation method of super-low resistivity low B value NTC thermistor material as claimed in claim 1, Including step in detail below:
Step 1, according to formula LaxSr1-xMnyO3, wherein 0.3≤x≤0.8,0.6≤y≤1.2, Weigh La respectively2O3、SrCO3And MnO2Powder mixes, by mixed powder, mill dielectric material and dispersion Agent loads ball grinder and carries out a ball milling, and Ball-milling Time is 18-26 hour；
Step 2, powder body step 1 ground put into baking oven, and 103 DEG C dry 8-14 hour；
Step 3, dried powder are sent into sintering furnace and are calcined 2～4 hours at 700～1000 DEG C, then will Powder after calcining, mill dielectric material and dispersant load ball grinder and carry out secondary ball milling, ball milling 18-26 hour, And dry；
Step 4, by terpineol, castor oil hydrogenated, dicarboxylic acid dimethyl ester, ethyl cellulose and Tween 80, It is configured to organic carrier by the mass ratio of 45:1:10:3:1；
300 mesh sieves first crossed by step 5, powder step 3 prepared, then according to powder and the matter of organic carrier Amount ratio 1:1 or 1:2, adds in the organic carrier that step 4 prepares, and 85 DEG C of heating in water bath stir 8 hours, Prepare slurry；
Step 6, slurry agitation step 5 prepared are printed on Al by silk screen printing the most afterwards2O3Base On plate, 130 DEG C of drying, after printing and dry calculation one layer, need print 4-6 layer, the gross thickness of thick film is 10 μm～16 μm, printing molding after material put in high temperature furnace, in 1100 DEG C～1350 DEG C, sintering 2～ 4 hours, make thick film ceramic, then brush silver electrode, i.e. obtain super-low resistivity low B value NTC temperature-sensitive electricity Resistance.
3. the preparation method of super-low resistivity low B value NTC thermistor material as claimed in claim 2, It is characterized in that: the mill dielectric material of described step 1 is zirconia ball or agate ball, dispersant is deionized water.
4. the preparation method of super-low resistivity low B value NTC thermistor material as claimed in claim 2, It is characterized in that: in described step 1 and step 2 once with powder during secondary ball milling, mill dielectric material and dispersion The mass ratio of agent is 1:2:3.
5. the preparation method of super-low resistivity low B value NTC thermistor material as claimed in claim 2, It is characterized in that: in described step 1 and step 3, the rotating speed of ball milling is 250r/min～300r/min.
6. the preparation method of super-low resistivity low B value NTC thermistor material as claimed in claim 2, It is characterized in that: the mesh mesh number of the silk screen printing in described step 6 is 300 mesh.
CN201610093845.9A 2016-02-22 2016-02-22 Ultra-low-specific-resistance low-B-value NTC thermosensitive resistance material and preparation method thereof Pending CN105732034A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106278221A (en) * 2016-07-25 2017-01-04 广东风华高新科技股份有限公司 Thermistor material and its preparation method and application
CN107706495A (en) * 2017-11-09 2018-02-16 广东风华高新科技股份有限公司 A kind of preparation method of temperature compensation attenuator
CN107946712A (en) * 2017-11-09 2018-04-20 广东风华高新科技股份有限公司 A kind of temperature compensation attenuator
CN114283961A (en) * 2021-12-30 2022-04-05 中国人民解放军国防科技大学 High-temperature resistance slurry and preparation method and application thereof
CN115557789A (en) * 2022-10-25 2023-01-03 安徽工业大学 Preparation method and application of flexible transition metal oxide lanthanum strontium manganese oxygen ferromagnetism thick film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3996411B2 (en) * 2002-03-05 2007-10-24 Ｔｄｋ株式会社 Composite NTC thermistor
CN101765569A (en) * 2007-08-22 2010-06-30 株式会社村田制作所 Semiconductor ceramic material and NTC thermistor
CN103396684A (en) * 2013-08-08 2013-11-20 山东大学 Reinforcing material, and preparation method and application thereof in preparation of thermosensitive film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3996411B2 (en) * 2002-03-05 2007-10-24 Ｔｄｋ株式会社 Composite NTC thermistor
CN101765569A (en) * 2007-08-22 2010-06-30 株式会社村田制作所 Semiconductor ceramic material and NTC thermistor
CN103396684A (en) * 2013-08-08 2013-11-20 山东大学 Reinforcing material, and preparation method and application thereof in preparation of thermosensitive film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘宏华: "丝网印刷法制备La1-xSrxMnO3基薄膜及性能研究", 《中国优秀硕士论文全文数据库 工程科技I辑》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106278221A (en) * 2016-07-25 2017-01-04 广东风华高新科技股份有限公司 Thermistor material and its preparation method and application
CN107706495A (en) * 2017-11-09 2018-02-16 广东风华高新科技股份有限公司 A kind of preparation method of temperature compensation attenuator
CN107946712A (en) * 2017-11-09 2018-04-20 广东风华高新科技股份有限公司 A kind of temperature compensation attenuator
CN107946712B (en) * 2017-11-09 2020-12-25 广东风华高新科技股份有限公司 Temperature compensation attenuator
CN114283961A (en) * 2021-12-30 2022-04-05 中国人民解放军国防科技大学 High-temperature resistance slurry and preparation method and application thereof
CN114283961B (en) * 2021-12-30 2024-03-15 中国人民解放军国防科技大学 High-temperature resistance slurry and preparation method and application thereof
CN115557789A (en) * 2022-10-25 2023-01-03 安徽工业大学 Preparation method and application of flexible transition metal oxide lanthanum strontium manganese oxygen ferromagnetism thick film

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Application publication date: 20160706