CN105720072A - AMOLED circuit structure - Google Patents
AMOLED circuit structure Download PDFInfo
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- CN105720072A CN105720072A CN201410724740.XA CN201410724740A CN105720072A CN 105720072 A CN105720072 A CN 105720072A CN 201410724740 A CN201410724740 A CN 201410724740A CN 105720072 A CN105720072 A CN 105720072A
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- amoled
- lead plate
- battery lead
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- cathode metal
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Abstract
The invention discloses an AMOLED circuit structure, including a first electrode plate and a second electrode plate. The first electrode plate is a cathode metal layer, while the second electrode layer is an ITO electrode plate. By using the cathode metal layer and the ITO electrode layer as two electrodes of a storage capacitor, the invention allows an aperture opening ratio of a structured pixel structure to be improved, meanwhile the service life of a display device is also extended, and the color purity of a panel is further improved.
Description
Technical field
The invention belongs to Display Technique field, be specifically related to a kind of AMOLED circuit structure.
Background technology
In flat panel display, Organic Light Emitting Diode (OrganicLight-EmittingDiode, OLED) display is frivolous with it, active illuminating, fast-response speed, wide viewing angle, rich color and the many merits such as high brightness, low-power consumption, high-low temperature resistant and to be known as by industry be third generation Display Technique after liquid crystal display (LCD).Active OLED (ActiveMatrixOLED, AMOLED) also referred to as Activematric OLED, AMOLED is driven because of the method by integrated thin-film transistor (TFT) in each pixel and capacitor and by capacitor maintenance voltage, thus large scale, resolution panels can be realized, it is the developing direction of the emphasis of current research and following Display Technique.
AMOLED can be divided into back side illuminated mode and comprehensive illumination mode two kinds according to luminous mode.Aperture opening ratio is not limited by comprehensive illumination mode, and thus without problem aperture opening ratio occur, but its making unit price is significantly high.Therefore, a lot of companies, in order to solve to make the problem of unit price, are developing the AMOLED display device of back side illuminated formula.Although back side illuminated has the advantage that exploitation unit price is low, but aperture opening ratio is low, and the quality of panel is bad.Therefore, developer, in order to improve aperture opening ratio, has use up a lot of effort.
The basic pixel circuit structure of AMOLED is to utilize the 2TFT1CAP structure shown in Fig. 1, constitute panel, basic pixel circuit specifically forms by 2 transistors with by 1 electric capacity C1, one described, two transistors are to drive transistor, luminous for the driving organic light emission original paper D1 according to data signal, another is switch transistors pipe, for opening and closing the path of data signal write storage electric capacity.Organic illuminating element D1 connects driving thin film transistor (TFT), it is provided that luminous electric current;Additionally, the magnitude of current of driving thin film transistor (TFT) is controlled by the DATA voltage inputted by switching thin-film transistor, now electric capacity C1 is connected between source electrode and the grid driving thin film transistor (TFT) for maintaining applied voltage in the given time, and the grid of switching thin-film transistor and source electrode connect with scanning line and data wire respectively.Scrutinize the action of Fig. 1, it is found that switching thin-film transistor action according to the signal inputted on the grid of switching thin-film transistor, data voltage signal is inputted on the grid of driving thin film transistor (TFT) by data wire.Input the data voltage at grid and pass through driving thin film transistor (TFT), organic illuminating element has electric current flow so that it is luminous, the organic illuminating element size according to the electric current injected, distribute light.
In existing technology, using data metal winding displacement DATA and gate metal winding displacement to constitute electric capacity when designing the image element circuit of AMOLED, the storage electric capacity that described prior art is formed will take bigger panel area, makes the aperture opening ratio of panel be restricted.
Summary of the invention
The invention aims to solve existing AMOLED dot structure uses data metal winding displacement and gate metal winding displacement to constitute electric capacity and can take the problem that bigger panel space makes the aperture opening ratio of AMOLED panel of manufacture be restricted, it is proposed that a kind of AMOLED circuit structure.
The technical scheme is that a kind of AMOLED circuit structure, including pixel capacitance, described pixel capacitance includes the first battery lead plate and the second battery lead plate, it is characterised in that described first battery lead plate is cathode metal layer, and the second battery lead plate is ITO electrode layer;
Described ITO electrode layer is connected by via and a metal level;
Being coated with protective layer, organic material layer and cathode metal layer on described ITO electrode layer successively, described cathode metal layer is as the first battery lead plate of described AMOLED pixel capacitance.
Beneficial effects of the present invention: the pixel capacitance of the AMOLED circuit structure of the present invention is by using cathode metal layer and ITO electrode layer as two electrodes of storage electric capacity, the aperture opening ratio making the dot structure of structure improves, also improve the life-span of display device, moreover it is possible to improve the purity of the color of panel simultaneously.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the 2T1C image element circuit of existing AMOLED.
Fig. 2 is the dot structure figure of the AMOLED of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and specific embodiment, the invention will be further elaborated.
It is an object of the invention to provide the AMOLED dot structure that a kind of aperture opening ratio is higher.
Being illustrated in figure 2 a kind of AMOLED pixel capacitance of the present embodiment, including the first battery lead plate and the second battery lead plate, it is characterised in that described first battery lead plate is cathode metal layer, the second battery lead plate is ITO electrode layer.
Described ITO electrode layer is connected by a via VIAhole and metal level Metal.
Being coated with protective layer bank, organic material layer OLED and cathode metal layer Metalcathode on described ITO electrode layer successively, described cathode metal layer is as the first battery lead plate of described AMOLED pixel capacitance.
Can be seen that, the pixel capacitance of the AMOLED circuit structure of the embodiment of the present invention is by using cathode metal layer and ITO electrode layer as two electrodes of storage electric capacity, the aperture opening ratio making the dot structure of structure improves, and also improves the life-span of display device simultaneously, moreover it is possible to improve the purity of the color of panel.
Those of ordinary skill in the art is it will be appreciated that embodiment described here is to aid in reader understanding's principles of the invention, it should be understood that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete deformation and combination without departing from essence of the present invention according to these technology disclosed by the invention enlightenment, and these deformation and combination remain in protection scope of the present invention.
Claims (1)
1. an AMOLED circuit structure, including pixel capacitance, described pixel capacitance includes the first battery lead plate and the second battery lead plate, it is characterised in that described first battery lead plate is cathode metal layer, and the second battery lead plate is ITO electrode layer;
Described ITO electrode layer is connected by via and a metal level;
Being coated with protective layer, organic material layer and cathode metal layer on described ITO electrode layer successively, described cathode metal layer is as the first battery lead plate of described AMOLED pixel capacitance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410724740.XA CN105720072A (en) | 2014-12-03 | 2014-12-03 | AMOLED circuit structure |
Applications Claiming Priority (1)
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CN201410724740.XA CN105720072A (en) | 2014-12-03 | 2014-12-03 | AMOLED circuit structure |
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CN105720072A true CN105720072A (en) | 2016-06-29 |
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CN201410724740.XA Pending CN105720072A (en) | 2014-12-03 | 2014-12-03 | AMOLED circuit structure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108615743A (en) * | 2018-03-23 | 2018-10-02 | 上海天马微电子有限公司 | A kind of organic light emitting display panel and preparation method thereof, organic light-emitting display device |
-
2014
- 2014-12-03 CN CN201410724740.XA patent/CN105720072A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108615743A (en) * | 2018-03-23 | 2018-10-02 | 上海天马微电子有限公司 | A kind of organic light emitting display panel and preparation method thereof, organic light-emitting display device |
CN108615743B (en) * | 2018-03-23 | 2020-12-01 | 上海天马微电子有限公司 | Organic light-emitting display panel, preparation method thereof and organic light-emitting display device |
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C06 | Publication | ||
PB01 | Publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160629 |
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WD01 | Invention patent application deemed withdrawn after publication |