CN105702773B - Narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS - Google Patents
Narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 28
- 239000006096 absorbing agent Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000007373 indentation Methods 0.000 abstract description 3
- 238000005036 potential barrier Methods 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 27
- 229910002601 GaN Inorganic materials 0.000 description 26
- 238000000825 ultraviolet detection Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 230000004043 responsiveness Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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Abstract
Narrow bandpass GaN base MSM structure ultraviolet detectors of the invention based on NPSS are related to a kind of semiconductor photoelectronic device.Its purpose is to provide a kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS, the ultraviolet detector is selected the transport mode of detector by potential barrier structure, advanced NPSS technologies are used simultaneously, and then reach the purpose for improving narrow bandpass ultraviolet detector performance comprehensively.A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, include successively from bottom to top：Substrate, cushion, N-type absorbed layer and Schottky electrode；Breach wherein is provided with the centre of Schottky electrode, the top of indentation, there, N-type absorbed layer in the Schottky electrode also includes N-type barrier layer and N-type shortwave filter layer successively.
Description
Technical field
The present invention relates to a kind of semiconductor photoelectronic device, more particularly to a kind of ultraviolet detector.
Background technology
Ultraviolet detection technology is that the another dual-use photoelectricity grown up after infrared and Laser Detection Technique is visited
Survey technology.Ultraviolet detection technology is widely used in missile warning and tracking, high security Ultraviolet Communication, medical science, biology, food
The numerous areas such as product drug safety, flame monitoring, ozone detection, laser acquisition, fluorescence analysis and astronomy research.At present,
The ultraviolet detection system of business and Military Application, many photomultipliers and similar vacuum using ultraviolet sensitivity are put into
Part.Although for vacuum device can realize the ultraviolet detection of high response, relative solid probe, with broken, volume it is big,
The shortcomings of operating voltage is high.With the progress of third generation semiconductor material with wide forbidden band technology, people start to prohibit using intrinsic molded breadth
Ultraviolet solid state photodetector is developed with semiconductor, wherein most potential is to be based on gallium nitride (GaN) base semiconductor material
The ultraviolet detector of preparation.GaN base thin-film material, it is wide with direct band gap, forbidden band as the representative of third generation semi-conducting material
The advantages of degree is big, electronics saturation drift velocity is high, dielectric constant is small, capability of resistance to radiation is strong, chemical stability is high, can be in space
Etc. being worked under adverse circumstances.In addition, GaN can be with the AlN formation adjustable ternary-alloy material AlGaN of component, its energy gap
AlN 6.2eV can be varied continuously to from GaN 3.4eV, the intrinsic cutoff wavelength of AlGaN detectors can be continuous from 365nm
200nm is changed to, is to make one of ideal material of all solid state ultraviolet detector.
The need for due to the huge application prospect in dual-use market and basic frontier nature Science Explorations, GaN base is ultraviolet to be visited
Survey the focus that device is always group III-nitride wide bandgap semiconductor area research and exploitation.M.A.Khan in 1992 et al. is first
Photoconduction type ultraviolet detector is developed with insulation GaN material, the research of GaN base ultraviolet detector so far has been subjected to more than 20 years
Development course.Foreign countries have carried out research, such as photoelectricity guide structure, p-i-n junction to the GaN base ultraviolet detector of various structures
The structure ultraviolet detectors such as structure, schottkybarrier structure, MSM (metal-semiconductor-metal).
In the application of ultraviolet detection, many situations need to detect the ultraviolet of specific band, detected purple
Wave section is often in the range of tens nanometers.In order to realize the detection to specific band without being disturbed by other wave bands,
The general Window layer using in detector adds specific filter plate.Although adding specific optical filter energy in the Window layer of detector
The detection of specific UV line is realized, but increase optical filter can reduce the responsiveness of detector, while complex process and cost are high
It is expensive.In order that detector has window selection characteristic in itself, Wang et al. proposes back-illuminated type p-i-n structure
[Appl.Phys.Lett.,73:1086-1088 (1998)], the structure is before deposition i types and p-type GaN layer, first in sapphire
The n-type AlGaN layer of Grown one, because AlGaN band gap is wider than GaN, can absorb short wave ultraviolet, so that detection
Device only carries out selection detection to the ultraviolet between GaN cutoff wavelengths and AlGaN cutoff wavelengths.Research detailed Chiou et al.
Influence [IEEE Electron Device Lett.26,172 of the AlGaN thickness to explorer response in the class formation
(2005)].Although the structure devices have good ultraviolet/visible light rejection ratio, the structure can not solve detector and exist
The rejection ratio problem of short-wave band, while the quality of epitaxial material is also influenceed by substrate technology.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of narrow bandpass GaN base MSM structure ultraviolet detections based on NPSS
Device, the ultraviolet detector is selected the transport mode of detector by potential barrier structure, while using advanced NPSS
Technology, and then reach the purpose for improving narrow bandpass ultraviolet detector performance comprehensively.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, are lamination layer structure；
Include successively from bottom to top：Substrate, cushion, N-type absorbed layer and Schottky electrode；Wherein in Schottky electrode
Centre is provided with breach, and the top of indentation, there, N-type absorbed layer in the Schottky electrode also includes N-type barrier layer and N-type successively
Shortwave filter layer.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the substrate is nanometer figure
Shape Sapphire Substrate.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the buffer layer thickness is
100-300nm, the N-type absorber thickness is 300-500nm, and the N-type barrier layer thickness is 100-200nm, and the N-type is short
Ripple filter layer thickness is 300-500nm.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the buffer layer thickness is
200nm, the N-type absorber thickness is 400nm, and the N-type barrier layer thickness is 150nm；The N-type shortwave filter layer thickness
For 400nm.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the cushion is AlN
Material；The N-type absorbed layer is the weak N-type Al of unintentional dopingxGa1-xN materials, wherein 0≤x≤1, doping concentration is about 1 ×
1016cm-3；The N-type barrier layer is the N-type Al deliberately adulteratedyGa1-yN materials, wherein 0≤y≤1, doping concentration is about 1 ×
1018cm-3；The N-type shortwave filter layer is the weak N-type Al of unintentional dopingzGa1-zN materials, wherein 0≤z≤1, doping concentration
About 1 × 1016cm-3。
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the different epitaxial layer materials
The Al components of material meet y>z>x.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein y=0.3, z=0.1, x
=0.0.
A kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, wherein the Schottky electrode is
Interdigital structure.
A kind of narrow bandpass GaN base MSM structures ultraviolet detector based on NPSS of the present invention is using prepared by NPSS technologies
Device, growth material quality is higher, and dislocation, defect concentration are small, and the dark current of device is small, and performance is stable；The stop gesture of new construction
Barrier layer is selected the transport mode of detector, improves the shortwave rejection ratio of detector；Uptake zone upper surface is barrier layer, shape
Into heterogeneous interface, detector is far below surface state by interfacial state compound influence, the density of interfacial state, and such device has higher
Quantum efficiency.The ultraviolet detection of different-waveband and bandwidth can be realized by selecting the component of different epitaxial layers to arrange in pairs or groups.
Narrow bandpass GaN base MSM structure ultraviolet detector of the present invention based on NPSS is made furtherly below in conjunction with the accompanying drawings
It is bright.
Brief description of the drawings
A kind of half sectional view of the narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of Fig. 1 present invention；
Fig. 2 can band schematic diagram for a kind of narrow bandpass GaN base MSM structures ultraviolet detector based on NPSS of the present invention；
Fig. 3 is the present invention a kind of narrow bandpass GaN base MSM structure ultraviolet detector spectral responses and conventional junction based on NPSS
The comparison schematic diagram of the spectral response of structure UV detector.
Embodiment
As shown in figure 1, a kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS of the present invention, from bottom to top according to
It is secondary including：Substrate 1, cushion 2, N-type absorbed layer 3 and Schottky electrode 6；Breach wherein is provided with the centre of Schottky electrode 6,
The Schottky electrode of breach both sides is independent of one another；The top of indentation, there, N-type absorbed layer 3 in Schottky electrode 6 also includes successively
N-type barrier layer 4 and N-type shortwave filter layer 5.
For material selection angle, substrate 1 is nano patterning sapphire material；Schottky electrode 6 is interdigital electrode；
Cushion 2 is AlN materials；N-type absorbed layer 3 is the weak N-type Al of unintentional dopingxGa1-xN materials, wherein 0≤x≤1, adulterates dense
Degree about 1 × 1016cm-3；N-type barrier layer 4 is the N-type Al deliberately adulteratedyGa1-yN materials, wherein 0≤y≤1, doping concentration is about
For 1 × 1018cm-3；N-type shortwave filter layer 5 is the weak N-type Al of unintentional dopingzGa1-zN materials, wherein 0≤z≤1, adulterates dense
Degree about 1 × 1016cm-3；The Al components of different epitaxial film materials meet y>z>x.
For thickness angle, the thickness of cushion 2 is 100-300nm, and the thickness of N-type absorbed layer 3 is 300-500nm, N-type
The thickness of barrier layer 4 is 100-200nm, and the thickness of N-type shortwave filter layer 5 is 300-500nm.
The operation principle of the present invention is illustrated in figure 2：When ultraviolet light is incident from front end, photon energy is higher than N-type shortwave mistake
The ultraviolet of filtering layer material band gap will directly be absorbed, and the part photo-generated carrier of generation will spread to absorbed layer, work as diffusion
To N-type shortwave filter layer and N-type barrier layer interface when, because N-type barrier layer has broader band gap, short wavelength UV will be stopped
The photo-generated carrier that line is produced, short-wave signal will not will be detected completely.Photon energy is in N-type filter layer and N-type absorbed layer
Ultraviolet between material band gap, will penetrate N-type shortwave filter layer and N-type barrier layer enters N-type absorbed layer, form current signal
Collected by Schottky electrode.Photo-generated carrier can only be absorbed the interfacial state shadow between bed boundary by N-type barrier layer and N-type simultaneously
Ring, surface state can be reduced photo-generated carrier is combined, and then improve the quantum efficiency of detector.The wave band of detector detection
Determined with bandwidth by the material component of N-type shortwave filter layer and N-type absorbed layer, matched by adjusting component, difference can be obtained
The narrow bandpass detector of wave band and bandwidth.
In order to verify rejection ratio effect of the present invention in short-wave band, the ultraviolet detector under three kinds of parameters is now chosen, in detail
Parameter see the table below shown embodiment one, embodiment two and embodiment three.
Ultraviolet detector spectral response intensity under three kinds of parameters is tested, then with the ultraviolet detection of traditional structure
The spectral response Comparative result of device, as a result as shown in Figure 3.
From the figure 3, it may be seen that the present invention is substantially better than the ultraviolet detector of traditional structure in the rejection ratio of short-wave band ultraviolet.
Embodiment described above is only that the preferred embodiment of the present invention is described, not to the model of the present invention
Enclose and be defined, on the premise of design spirit of the present invention is not departed from, technical side of the those of ordinary skill in the art to the present invention
In various modifications and improvement that case is made, the protection domain that claims of the present invention determination all should be fallen into.
Claims (8)
1. a kind of narrow bandpass GaN base MSM structure ultraviolet detectors based on NPSS, include successively from bottom to top：Substrate, buffering
Layer, N-type absorbed layer and Schottky electrode；Breach wherein is provided with the centre of Schottky electrode, in lacking for the Schottky electrode
Mouthful place, the top of N-type absorbed layer are also successively including N-type barrier layer and N-type shortwave filter layer.
2. a kind of ultraviolet detector according to claim 1, it is characterised in that：The substrate is nano patterning sapphire
Substrate.
3. a kind of ultraviolet detector according to claim 1, it is characterised in that：The buffer layer thickness is 100-300nm,
The N-type absorber thickness is 300-500nm, and the N-type barrier layer thickness is 100-200nm, and the N-type shortwave filters thickness
Spend for 300-500nm.
4. a kind of ultraviolet detector according to claim 3, it is characterised in that：The buffer layer thickness is 200nm, described
N-type absorber thickness is 400nm, and the N-type barrier layer thickness is 150nm；The N-type shortwave filter layer thickness is 400nm.
5. a kind of ultraviolet detector according to claim 1, it is characterised in that：The cushion is AlN materials；The N
Type absorbed layer is the weak N-type Al of unintentional dopingxGa1-xN materials, wherein 0≤x≤1, doping concentration is 1 × 1016cm-3；The N
Type barrier layer is the N-type Al deliberately adulteratedyGa1-yN materials, wherein 0≤y≤1, doping concentration is 1 × 1018cm-3；The N-type is short
Ripple filter layer is the weak N-type Al of unintentional dopingzGa1-zN materials, wherein 0≤z≤1, doping concentration is 1 × 1016cm-3。
6. a kind of ultraviolet detector according to claim 5, it is characterised in that：The Al components of different epitaxial film materials are met
y>z>x。
7. a kind of ultraviolet detector according to claim 6, it is characterised in that：Y=0.3, z=0.1, x=0.0.
8. a kind of ultraviolet detector according to claim 1, it is characterised in that：The Schottky electrode is interdigital structure.
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| CN205595352U (en) * | 2016-04-01 | 2016-09-21 | 中国电子科技集团公司第三十八研究所 | Narrowband leads to gaN base MSM structure ultraviolet detector based on NPSS |
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