CN105702548B - Screening arrangement and the plasma processing apparatus with the screening arrangement - Google Patents
Screening arrangement and the plasma processing apparatus with the screening arrangement Download PDFInfo
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- CN105702548B CN105702548B CN201410686564.5A CN201410686564A CN105702548B CN 105702548 B CN105702548 B CN 105702548B CN 201410686564 A CN201410686564 A CN 201410686564A CN 105702548 B CN105702548 B CN 105702548B
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Abstract
The invention discloses a kind of screening arrangement for optionally preventing charged particle from passing through from plasma, including：The first barricade in reaction chamber, wherein forming multiple first through holes, first barricade has conductive material, applies a Dc bias on the conductive material；Conductive component, the plasma distributed areas being arranged in reaction chamber between first barricade and plasma source and with exposed to plasma surface；Measurement assembly, the electric current for the plasma that the surface for measuring the conductive component is absorbed；And control assembly, calculated according to the measurement result of the measurement assembly and control the bias value and polarity of the Dc bias.The present invention can accurately control Dc bias and it is caused to damage so as to prevent charged particle from reaching substrate surface.
Description
Technical field
It is more particularly to a kind of powered for optionally being prevented from plasma the present invention relates to semiconductor processing equipment
The screening arrangement that particle passes through and the plasma processing apparatus with the screening arrangement.
Background technology
Currently, device of the plasma processing apparatus as the kinds of processes such as execution film forming, etching on a semiconductor die,
It is widely used in the technical field of semiconductor devices manufacture.In plasma processing apparatus, make the plasma of reacting gas
Body acts on a semiconductor die, and performs corresponding corona treatment.In general, charged particle is included in plasma
Such as cation and electronics, and the free radical as neutral particle.In some plasma-treating technologies, mainly utilize certainly
Semiconductor chip is handled by base.The photoresist for such as removing photoresist process requirement free radical and semiconductor chip surface enters
Row reaction.If charged particle reaches semiconductor chip, negative reciprocation can be produced with semiconductor chip and cause core
The damage of piece semiconductor-on-insulator component, it is desirable to less charged particle to be accumulated in chip surface.
Chinese patent CN100573830C provide it is a kind of optionally only make the selection that free radical passes through by unit, should
Selection is configured with the insulation board of more than 2 formed with multiple pass through openings portions by unit so that the position in the pass through openings portion
Put and stagger, due in general cation can be attracted by bias voltage caused by pedestal and along rectilinear movement, therefore in two plates
Pass through openings portion stagger in the case of, the entity part of lower plate is collided and can not by the cation of upper plate pass through openings
Through lower plate, but free radical can still pass through the insertion of lower plate due to being the neutral not meeting random movement by bias voltage attraction
Opening, thus, it is possible to optionally pass through free radical from plasma.However, when in order to improve use free radical grade from
Daughter processing efficiency and use highdensity plasma when, the density of cation also improves therewith, and therefore, cation passes through
The probability of above-mentioned two plate also improves, and the film on semiconductor chip is it is possible to because cation damages.
Chinese patent CN101919030B provides another solution, its by with multiple free radical entrance holes etc.
Plasma confinement plate electrical ground is to be discharged, so as to prevent the charged particle in plasma from passing through free radical entrance hole.But
It is that leakage current still can not be completely eliminated in this method, charged particle can not be thus completely shielded.
Accordingly, it is desirable to provide a kind of optionally prevent the screening arrangement that charged particle passes through from improving from plasma
Drawbacks described above.
The content of the invention
The defects of it is a primary object of the present invention to overcome prior art, there is provided it is a kind of by accurately control Dc bias come
Charged particle is prevented to reach the charged particle screening arrangement of substrate surface, to effectively reduce the damage to substrate surface semiconductor devices
Wound.
To reach above-mentioned purpose, the present invention provides a kind of be used for produced by the plasma source from plasma processing apparatus
Plasma in optionally prevent the screening arrangement that charged particle passes through.The screening arrangement includes：First barricade, if
It is placed in the reaction chamber of the plasma processing apparatus, wherein multiple first through holes are formed, the first barricade tool
There is conductive material, apply a Dc bias on the conductive material；Conductive component, is arranged in the reaction chamber, described the
Plasma distributed areas between one barricade and the plasma source and with exposed to the surface of plasma；Measurement
Component, the electric current for the plasma that the surface for measuring the conductive component is absorbed；And control assembly, according to the survey
The measurement result of amount component calculates and controls the bias value and polarity of the Dc bias.
Preferably, the screening arrangement also includes the secondary shielding plate that is be arranged in parallel with first barricade, and described the
Form multiple second through holes in two barricades, the multiple second through hole and the multiple first through hole be not overlapping or portion
Divide overlapping.
Preferably, the secondary shielding plate has applies the Dc bias on conductive material and the conductive material.
Preferably, the conductive component is arranged at multiple positions of the plasma distributed areas, the control assembly
The multiple measurement results obtained according to the measurement assembly calculate and control the bias value and polarity of the Dc bias.
Preferably, the conductive component is attached on first barricade.
Preferably, described in the Polarity Control for the plasma current that the control assembly detects according to the measurement assembly
The polarity of Dc bias, calculated according to the current value of the plasma current and control the bias value of the Dc bias.
Preferably, when the electric current that the measurement assembly measures the plasma is positive-ion current, the control group
Part controls the polarity of the Dc bias as just；When the electric current that the measurement assembly measures the plasma is negative electricity electron current
When, it is negative that the control assembly, which controls the polarity of the Dc bias,.
Preferably, first barricade is that conductive material is made or coats conductive coating on non-conducting material surface.
Preferably, first barricade and secondary shielding plate are that conductive material is made or coated on non-conducting material surface
Conductive coating.
According to another aspect of the present invention, a kind of plasma processing apparatus is additionally provided, it includes：Plasma source；
Reaction chamber, it includes being used for the pedestal for loading substrate；And above-mentioned screening arrangement, the barricade of the screening arrangement are located at
The top of the pedestal in the reaction chamber.
The beneficial effects of the present invention are determine to be applied to barricade by detecting the characteristic of electric current caused by plasma
On Dc bias magnitude of voltage and polarity, so as to control Dc bias exactly prevent charged particle reach substrate table
Face, to effectively reduce the damage to substrate surface semiconductor devices.
Brief description of the drawings
Fig. 1 is the schematic diagram of the plasma processing apparatus with screening arrangement of one embodiment of the invention；
Fig. 2 is the schematic diagram of the plasma processing apparatus with screening arrangement of another embodiment of the present invention.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 1~Fig. 2 shows the plasma treatment appts that numerous embodiments of the present invention provide.It should be understood that it is only
It is exemplary, less or more composition component can be included, or the arrangement of the composition component may be different from diagram.
Embodiment one
Refer to Fig. 1, the plasma processing apparatus of the present embodiment include reaction chamber 10, plasma generator 11 and
Screening arrangement.The bottom of reaction chamber 10 is provided with the pedestal 12 for clamping pending substrate W；Remote plasma generator 11
Process gas is excited as plasma and is supplied to inside reaction chamber 10 as remote plasma source；Screening arrangement is used for
Optionally charged particle is prevented to pass through from plasma.The plasma source of the present invention is not limited to remote plasma hair
Raw device, the other modes such as inductive (ICP), microwave generation plasma in reaction chamber 10 can also be used.
Screening arrangement has：Top shielding plate 20 (the first barricade), conductive component 30, measurement assembly 40 and control group
Part 50.Wherein top shielding plate 20 is arranged at the top of pedestal 12 in reaction chamber 10, and it can be by support component (in figure not
Show) it is fixed.Top shielding plate 20 has conductive material 22.In addition, multiple first through holes 21 are also formed in barricade 20, so that
Free radical in plasma passes through substrate W.Top shielding plate 20 can be made of an electrically conducting material in itself, or non-conductive
Material surface coats one layer of conductive coating.As illustrated, the conductive material 22 of barricade 20 connects dc source 60, the direct current
Source 60 applies Dc bias to cause the charged particle in plasma can not pass through barricade 20 to barricade 20.According to wait from
The difference of plasma process process, the attribute of charged particle and kinetic energy distribution also can be accordingly different in plasma, so if only
Apply the Dc bias of fixed voltage value and polarity to the conductive material 22 of barricade 20, be then more likely to produce DC bias value
Excessive too small or opposite polarity situation, the situation of charged particle through barricade 20 is caused to occur.In order to monitor reaction in real time
The characteristic of charged particle and corresponding feedback is provided in chamber chamber piasma, screening arrangement of the invention have also been devised sensing group
Part and control assembly.Wherein, sensory package includes conductive component 30 and measurement assembly 40.Conductive component 30 is arranged at reaction chamber
Plasma distributed areas inside room 10, between the first barricade 20 and plasma source 11, and with exposed to etc. from
The electricity of the charged particle in the surface of conductive component formation plasma on the surface of conductive component 30 is arrived in the surface of daughter, thus bombardment
Stream.Conductive component 30 is for example connected by wire with the measurement assembly 40 outside reaction chamber 10.In the present embodiment, measurement assembly
40 include the galvanometer of ground connection, the positive negativity of the electric current of the surface plasma of conductive component 30 can be measured, when bombardment induced conductivity group
When the majority on the surface of part 30 is electronics, the current polarity that amperometric measurement goes out plasma is negative, when the table of bombardment induced conductivity component 30
When the majority in face is cation, amperometric measurement goes out the current polarity of plasma for just.In addition, galvanometer is certainly also measurable
Go out the size of plasma current.Measurement assembly 40 can also be other forms, the combination of such as resistance and potentiometer, as long as energy
Enough measure the size of current of the plasma of the Surface absorption of conductive component 30 and positive and negative.Control assembly 50 and measurement assembly
40 are connected, and are calculated according to the measurement result of measurement assembly 40 and control dc source 60 to be applied on the conductive material 22 of barricade 20
Dc bias bias value and polarity.Specifically, control assembly 50 is according to the Polarity Control direct current of the electric current of plasma
The polarity of bias, in the present embodiment, when the electric current that measurement assembly 40 measures plasma is positive-ion current, illustrate etc. from
Charged particle in daughter is mostly cation, and control assembly 50 controls the polarity of Dc bias as just, the polarity of cation with to
Top shielding plate 20 apply Dc bias polarity it is identical, therefore, the cation from top shielding plate 20 by repulsive force and
It is dislodged with the direction away from substrate W；When the electric current that measurement assembly 40 measures plasma is negative electricity electron current, illustrate
Charged particle in gas ions is mostly electronics, control assembly 50 control the polarity of Dc bias be it is negative, the polarity of electronics with upwards
Portion's barricade 20 apply Dc bias polarity it is identical, therefore, the electronics equally from top shielding plate 20 by repulsive force and
It is dislodged with the direction away from substrate W.By the way that the Dc bias applied on top shielding plate 20 is designed as and plasma electricity
Identical polar is flowed, can shield or expel to form most charged particles of plasma current to avoid it from passing through top shielding plate
20.On the other hand, it is appropriate voltage that control assembly 50 controls Dc bias according to the size of measured plasma current
Value, to cause all charged particles can not pass through barricade 20.Electric current to measure plasma be positive-ion current as
Example, if the positive bias applied is too small, cation can not be dislodged completely, and then can pass through barricade；If the positively biased applied presses through
Greatly, although cation can be dislodged, the attraction of the electronics in plasma is also bigger, is allowed to absorption in barricade table
Face, and then barricade may also be passed through, it is therefore desirable to control assembly 50 is controlled to the size of bias value, it is ensured that only neutral grain
The free radical of son with to substrate W processing, and avoids charged particle to substrate W semiconductor-on-insulator assembly functions through barricade 20
Influence.
Conductive component 30 can be arranged on any position of plasma distributed areas, such as the outlet of plasma source 11
End, the i.e. top open part of reaction chamber 10.Preferably, conductive component 30 is the upper table being sticked in top shielding plate 20 as shown in the figure
On face, such conductive component 30 is identical with the characteristic for the plasma that top shielding plate 20 is received, measurement assembly 40
To the actual electric current for reflecting the plasma that the surface of top shielding plate 20 is absorbed of measurement result, once and measurement assembly
When detecting that the electric current on the surface of conductive component 30 eliminates, that is to say means that all charged particles expel from barricade 20,
Therefore control result is more accurate.In addition, although conductive component 30 is only one in the present embodiment, in other embodiments
Multiple conductive components 30 can be used, are arranged on multiple positions of plasma distributed areas, such as be attached at the side of barricade 20
Edge position and center, then measurement assembly 40 can obtain multiple measurement results, control assembly 50 is entered to multiple measurement results
Row calculates (such as average or other complicated calculations) and obtains the attribute of charged particle in more accurate plasma, thus real
Now more accurate Dc bias control.
Embodiment two
Refer to Fig. 2, the present embodiment and the difference of embodiment one are, screening arrangement also include positioned at the top of pedestal 12,
The underlying shield plate 23 (secondary shielding plate) being be arranged in parallel with top shielding plate 20.Underlying shield plate 23 has the multiple second insertions
The position of hole 24, the second through hole 24 and the first through hole 21 is not overlapping or partly overlaps, i.e., with do not formed straight line connection side
Formula sets the first through hole 21 and the second through hole 24, so will be with bottom screen after charged particle passes through the first through hole 21
The entity part collision of shield plate 23, can further prevent charged particle from reaching substrate W through secondary shielding plate 23.First insertion
The size and dimension of hole and the second through hole can arbitrarily be set, the shape size of each through hole in same barricade
Can be different, the present invention is not any limitation as.
Underlying shield plate 23 equally has conductive material 25, and the conductive material 25 is also connected and applied with dc source 60
Add Dc bias.Underlying shield plate 23 can be made of an electrically conducting material in itself, or non-conducting material surface coating conductive coating.By
Also it is connected in underlying shield plate 23 with dc source 60, control assembly 50 is calculated according to the measurement result of measurement assembly 40 and controlled
To Dc bias can be equally applied to by dc source 60 on underlying shield plate 23, therefore further enhance to charged particle
Repulsive interaction, play more preferable blocking effect.
In summary, screening arrangement and plasma processing apparatus proposed by the invention, produced by detecting plasma
The characteristic of raw electric current obtains the attribute of charged particle in plasma, and then the direct current that accurate control applies on the shield plates is inclined
The magnitude of voltage and polarity of pressure, to prevent charged particle from reaching substrate surface through barricade, the present invention can be effectively reduced to base
The damage of piece.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (8)
1. a kind of screening arrangement, applied to plasma processing apparatus, for from the plasma by the plasma processing apparatus
Optionally charged particle is prevented to pass through in plasma caused by body source, it is characterised in that the screening arrangement includes：
First barricade, is arranged at the top of pedestal in the reaction chamber of the plasma processing apparatus, wherein being formed multiple
First through hole, first barricade have conductive material, apply a Dc bias on the conductive material；
Conductive component, it is arranged in the reaction chamber, the plasma between first barricade and the plasma source
Body distributed areas and with exposed to plasma surface；
Measurement assembly, the electric current for the plasma that the surface for measuring the conductive component is absorbed；And
Control assembly, the pole of Dc bias described in the Polarity Control of the plasma current measured according to the measurement assembly
Property, and the current value of the plasma current measured according to the measurement assembly calculate and control the inclined of the Dc bias
Pressure value；Wherein when the electric current that the measurement assembly measures the plasma is positive-ion current, the control assembly control
The polarity of the Dc bias is just；When the electric current that the measurement assembly measures the plasma is negative electricity electron current, institute
It is negative to state control assembly and control the polarity of the Dc bias.
2. screening arrangement according to claim 1, it is characterised in that also include what is be arranged in parallel with first barricade
Secondary shielding plate, forms multiple second through holes in the secondary shielding plate, the multiple second through hole and the multiple the
One through hole is not overlapping or partly overlaps.
3. screening arrangement according to claim 2, it is characterised in that the secondary shielding plate has conductive material and described
Apply the Dc bias on conductive material.
4. screening arrangement according to claim 1, it is characterised in that the conductive component is arranged at the plasma point
Multiple positions in cloth region, multiple measurement results that the control assembly obtains according to the measurement assembly calculate and described in controlling
The bias value and polarity of Dc bias.
5. screening arrangement according to claim 1, it is characterised in that the conductive component is attached at first barricade
On.
6. screening arrangement according to claim 1, it is characterised in that first barricade be conductive material be made or
Non-conducting material surface coats conductive coating.
7. screening arrangement according to claim 3, it is characterised in that first barricade and secondary shielding plate are conduction
Material is made or coats conductive coating on non-conducting material surface.
A kind of 8. plasma processing apparatus, it is characterised in that including：
Plasma source；
Reaction chamber, it includes being used for the pedestal for loading substrate；And
Screening arrangement as described in any one of claim 1~7, the barricade of the screening arrangement are located in the reaction chamber
The top of the pedestal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686564.5A CN105702548B (en) | 2014-11-25 | 2014-11-25 | Screening arrangement and the plasma processing apparatus with the screening arrangement |
| TW104127658A TWI590292B (en) | 2014-11-25 | 2015-08-25 | Shielding device and plasma processing device with the shielding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686564.5A CN105702548B (en) | 2014-11-25 | 2014-11-25 | Screening arrangement and the plasma processing apparatus with the screening arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702548A CN105702548A (en) | 2016-06-22 |
| CN105702548B true CN105702548B (en) | 2018-01-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410686564.5A Active CN105702548B (en) | 2014-11-25 | 2014-11-25 | Screening arrangement and the plasma processing apparatus with the screening arrangement |
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| TW (1) | TWI590292B (en) |
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| CN107507793B (en) * | 2017-08-18 | 2020-02-04 | 深圳市华星光电技术有限公司 | Etching apparatus |
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| KR100458328B1 (en) * | 2002-03-27 | 2004-11-26 | 주성엔지니어링(주) | plasma sensing device |
| JP2013084552A (en) * | 2011-09-29 | 2013-05-09 | Tokyo Electron Ltd | Radical selection apparatus and substrate processing apparatus |
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| Publication number | Publication date |
|---|---|
| TW201631618A (en) | 2016-09-01 |
| TWI590292B (en) | 2017-07-01 |
| CN105702548A (en) | 2016-06-22 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |