CN105702469A - Full-wave voltage-doubling rectifying circuit - Google Patents
Full-wave voltage-doubling rectifying circuit Download PDFInfo
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- CN105702469A CN105702469A CN201610194526.7A CN201610194526A CN105702469A CN 105702469 A CN105702469 A CN 105702469A CN 201610194526 A CN201610194526 A CN 201610194526A CN 105702469 A CN105702469 A CN 105702469A
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- wire
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- shell
- capacitor
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- 239000003990 capacitor Substances 0.000 claims abstract description 67
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000003822 epoxy resin Substances 0.000 claims abstract description 6
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims description 23
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 15
- 239000007784 solid electrolyte Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910000648 terne Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/032—Inorganic semiconducting electrolytes, e.g. MnO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/28—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices with other electric components not covered by this subclass
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
The invention discloses a full-wave voltage-doubling rectifying circuit. The full-wave voltage-doubling rectifying circuit comprises two rectifier diodes and two filter capacitors, wherein the two series-wound rectifier diodes are connected with the two series-wound filter capacitors in parallel; a rectifying filtering circuit performs rectifying and filtering on the input alternating current voltage to obtain a smooth direct current voltage, wherein the filter capacitors adopt tantalum electrolytic capacitors; the filter capacitors are smaller in volume under the same voltage resistance and capacitance, so that the volume of the rectifying filtering circuit can be reduced; in addition, the rectifying filtering circuit is stable in performance and can keep good electrical property after long-term operation; chip resistors for discharging are built in the filter capacitors; after the power supply is cut off, the chip resistors can discharge the electric energy stored in capacitor cores within a quite short time to reduce the voltage of the capacitor cores to be zero, so that bleeder resistors are not required to be connected at the two ends of the filter capacitors in parallel; therefore, the circuit is simpler; and the space between the shell inner cavities of the filter capacitors and the capacitor elements is filled with epoxy resin. Therefore, the full-wave voltage-doubling rectifying circuit is good in insulating effect, capable of protecting the capacitor elements and preventing short circuits or electric leakage, and safer.
Description
Technical field
The present invention relates to current rectifying and wave filtering circuit field, particularly to a kind of full-wave voltage doubler。
Background technology
LED drive circuit is it is necessary to have input rectifying filter circuit and output rectifier and filter。Input rectifying filter circuit needs relatively large capacitance rectifier output voltage could be smoothed to allowed band。Output rectifier and filter is also required to enough capacitances and comes the stability of holding circuit and the smooth of output electric current。Current rectifying and wave filtering circuit all contains electric capacity, and the maximum weakness of electrolysis condenser is that the life-span is short, and unstable properties。
Summary of the invention
The main purpose of the present invention is to provide the full-wave voltage doubler of a kind of stable performance, long service life。
The present invention proposes a kind of full-wave voltage doubler, including two commutation diodes and two filter capacitors, filter capacitor series connection described in two, commutation diode series connection described in two, described in the two of series connection, commutation diode is in parallel with filter capacitor described in connect two, constitutes a full-wave voltage doubler；Described filter capacitor includes shell and the capacitor element being placed in described shell, described capacitor element includes capacitor core, negative wire, positive wire and electric discharge Chip-R, described Chip-R is in parallel with described capacitor core, described capacitor core includes by the porous tantalum powder sintering block positive electrode substrate of high temperature sintering after tantalum metal powder briquet, the surface of described tantalum powder sintering block positive electrode substrate is formed with TaO5 film through anodic oxidation, a tantalum wire is stretched out to positive terminal in described tantalum powder sintering block positive electrode substrate, described positive wire welds with described tantalum wire, negative pole end in described tantalum powder sintering block positive electrode substrate forms solid electrolyte MnO2 layer by impregnating manganese nitrate then through high temperature sintering, described solid electrolyte MnO2 layer is coated with negative pole graphite linings, described negative pole graphite linings is coated with terne metal conductive layer, described negative wire is welded on the negative pole end of described capacitor core, it is electrically connected with described solid electrolyte MnO2 layer；
Being provided with positive terminal pad and negative terminal pad on described capacitor core, the positive pole of described Chip-R is welded on described positive terminal pad, and the negative pole of described Chip-R is welded in described negative terminal pad；Described shell is the shell of one end open, the other end at described shell has negative wire hole, described capacitor core loads in described shell from the opening of described shell, described negative wire stretches out from described negative wire hole, it is filled with epoxy resin between described shell inner cavity and described capacitor element, open end cap at described shell sets rubber seal plug, has positive wire hole beyond the Great Wall in described rubber seal, and described positive wire stretches out from described positive wire hole。
Preferably, described negative wire is copper wire, and described positive wire is nickel wire。
The full-wave voltage doubler of the present invention, for the alternating voltage of input is carried out rectification, filtering, obtains a smooth DC voltage。After the tantalum powder briquet that wherein filter capacitor employing granule is very thin, high temperature sintering becomes the tantalum powder sintering block positive electrode substrate of porous, and the effective area in monomer whose is long-pending is big, uses temperature range width；The surface of tantalum powder sintering block positive electrode substrate is formed with TaO5 film through anodic oxidation, and the dielectric constant of TaO5 film is bigger than the dielectric constant of alumite；Negative pole end in tantalum powder sintering block positive electrode substrate forms solid electrolyte MnO2 layer by impregnating manganese nitrate then through high temperature sintering, is coated with negative pole graphite linings, is coated with terne metal conductive layer in negative pole graphite linings on solid electrolyte MnO2 layer；Therefore when identical pressure and capacitance, the small volume of filter capacitor, can reduce the volume of full-wave voltage doubler, and stable performance, work long hours the electrical property remaining to keep good。
Filter capacitor is built-in with electric discharge Chip-R, when, after dump, Chip-R can bleed off the electricity being stored in capacitor core in a short period of time, and the voltage of capacitor core is reduced to zero, from without at filter capacitor two ends parallel connection bleeder resistance, make current rectifying and wave filtering circuit more succinct。And it also avoid owing to capacitor core is charged, the danger of the human body that shocks by electricity after human body touch, safety is high。
Between the shell inner cavity and capacitor element of filter capacitor, it is filled with epoxy resin, shell can be propped up so that it is be unlikely to deform, and insulation effect is good, moreover it is possible to protective condenser element, it is prevented that short circuit or electric leakage, make LED drive device safer。
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the full-wave voltage doubler of the present invention；
Fig. 2 is the sectional view of the capacitor core of the filter capacitor in the full-wave voltage doubler of the present invention；
Fig. 3 is the sectional view of the filter capacitor in the full-wave voltage doubler of the present invention。
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing。
Detailed description of the invention
Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention。
Referring to figs. 1 through Fig. 3, it is proposed to an embodiment of the full-wave voltage doubler of the present invention:
This full-wave voltage doubler includes two commutation diode D1, D2, two filter capacitors C1, C2, two filter capacitor C1, C2 series connection, two commutation diode D1, D2 series connection, two commutation diode D1, D2 of series connection are in parallel with two filter capacitor C1, the C2 connected, and constitute a full-wave voltage doubler。During circuit work, two commutation diode Dl, D2 and two electric capacity C1, C2 composition full-wave voltage doubler the alternating voltage inputted is carried out rectification, filtering, obtain a smooth DC voltage and export。
Filter capacitor C1, C2 include shell 10 and the capacitor element being placed in shell 10, and capacitor element includes capacitor core 20, negative wire 50, positive wire 40 and electric discharge Chip-R 30, and described Chip-R 30 is in parallel with described capacitor core 20。Capacitor core 20 includes by the porous tantalum powder sintering block positive electrode substrate 21 of high temperature sintering after tantalum metal powder briquet, and the effective area in monomer whose is long-pending is big, uses temperature range width。The dielectric constant that the surface of tantalum powder sintering block positive electrode substrate 21 is formed with TaO5 film 22, TaO5 film 22 through anodic oxidation is bigger than the dielectric constant of alumite。Stretching out a tantalum wire 26 to positive terminal in tantalum powder sintering block positive electrode substrate 21, positive wire 40 welds with tantalum wire 26, and positive wire 40 is nickel wire。Negative pole end in tantalum powder sintering block positive electrode substrate 21 forms solid electrolyte MnO2 layer 23 by impregnating manganese nitrate then through high temperature sintering, solid electrolyte MnO2 layer 23 is coated with negative pole graphite linings 24, negative pole graphite linings 24 is coated with terne metal conductive layer 25, negative wire 50 is welded on the negative pole end of capacitor core 20, is electrically connected with solid electrolyte MnO2 layer 23。Negative wire 50 is copper wire。
Being provided with positive terminal pad and negative terminal pad on capacitor core 20, the positive pole of Chip-R 30 is welded on positive terminal pad, and the negative pole of Chip-R 30 is welded in negative terminal pad。When, after dump, Chip-R 30 can bleed off the electricity being stored in capacitor core 20 in a short period of time, and the voltage of capacitor core 20 is reduced to zero, from without at filter capacitor two ends parallel connection bleeder resistance, make current rectifying and wave filtering circuit more succinct。And it also avoid owing to capacitor core 20 is charged, the danger of the human body that shocks by electricity after human body touch, safety is high。
Shell 10 is the shell of one end open, the other end at shell 10 has negative wire hole, capacitor core 20 loads in shell 10 from the opening of shell 10, negative wire 50 stretches out from negative wire hole, epoxy resin 70 it is filled with between shell 10 inner chamber and capacitor element, open end cap at shell 10 sets rubber seal plug 60, has positive wire hole on rubber seal plug 60, and positive wire 40 stretches out from positive wire hole。Shell 10 can be propped up by the epoxy resin 70 filled so that it is be unlikely to deform, and insulation effect is good, moreover it is possible to protective condenser element, it is prevented that short circuit or electric leakage, safer。
The foregoing is only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure transformation utilizing description of the present invention and accompanying drawing content to make; or directly or indirectly it is used in other relevant technical fields, all in like manner include in the scope of patent protection of the present invention。
Claims (2)
1. a full-wave voltage doubler, it is characterized in that, including two commutation diodes and two filter capacitors, filter capacitor series connection described in two, commutation diode series connection described in two, described in the two of series connection, commutation diode is in parallel with filter capacitor described in connect two, constitutes a full-wave voltage doubler；Described filter capacitor includes shell and the capacitor element being placed in described shell, described capacitor element includes capacitor core, negative wire, positive wire and electric discharge Chip-R, described Chip-R is in parallel with described capacitor core, described capacitor core includes by the porous tantalum powder sintering block positive electrode substrate of high temperature sintering after tantalum metal powder briquet, the surface of described tantalum powder sintering block positive electrode substrate is formed with TaO5 film through anodic oxidation, a tantalum wire is stretched out to positive terminal in described tantalum powder sintering block positive electrode substrate, described positive wire welds with described tantalum wire, negative pole end in described tantalum powder sintering block positive electrode substrate forms solid electrolyte MnO2 layer by impregnating manganese nitrate then through high temperature sintering, described solid electrolyte MnO2 layer is coated with negative pole graphite linings, described negative pole graphite linings is coated with terne metal conductive layer, described negative wire is welded on the negative pole end of described capacitor core, it is electrically connected with described solid electrolyte MnO2 layer；
Being provided with positive terminal pad and negative terminal pad on described capacitor core, the positive pole of described Chip-R is welded on described positive terminal pad, and the negative pole of described Chip-R is welded in described negative terminal pad；Described shell is the shell of one end open, the other end at described shell has negative wire hole, described capacitor core loads in described shell from the opening of described shell, described negative wire stretches out from described negative wire hole, it is filled with epoxy resin between described shell inner cavity and described capacitor element, open end cap at described shell sets rubber seal plug, has positive wire hole beyond the Great Wall in described rubber seal, and described positive wire stretches out from described positive wire hole。
2. full-wave voltage doubler according to claim 1, it is characterised in that described negative wire is copper wire, described positive wire is nickel wire。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610194526.7A CN105702469A (en) | 2016-03-31 | 2016-03-31 | Full-wave voltage-doubling rectifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610194526.7A CN105702469A (en) | 2016-03-31 | 2016-03-31 | Full-wave voltage-doubling rectifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105702469A true CN105702469A (en) | 2016-06-22 |
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ID=56218770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610194526.7A Pending CN105702469A (en) | 2016-03-31 | 2016-03-31 | Full-wave voltage-doubling rectifying circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN105702469A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194242A (en) * | 2018-10-31 | 2019-01-11 | 东莞易盟特电气设备有限公司 | A kind of frequency converter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4764844A (en) * | 1986-06-13 | 1988-08-16 | Murata Manufacturing Co., Ltd. | Electronic component with terminal caps |
| CN101329951A (en) * | 2008-05-23 | 2008-12-24 | 电子科技大学 | High-frequency nonpolarity solid tantalum electrolytic capacitor with lead wire and manufacturing method thereof |
| CN203181275U (en) * | 2012-12-31 | 2013-09-04 | 陈榕锦 | LED drive circuit |
| CN103700501A (en) * | 2013-12-17 | 2014-04-02 | 中国振华（集团）新云电子元器件有限责任公司 | Leading-out process for anode and cathode of end cap-type tantalum capacitor |
| CN104916435A (en) * | 2015-06-28 | 2015-09-16 | 吕杨 | Capacitor |
-
2016
- 2016-03-31 CN CN201610194526.7A patent/CN105702469A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4764844A (en) * | 1986-06-13 | 1988-08-16 | Murata Manufacturing Co., Ltd. | Electronic component with terminal caps |
| CN101329951A (en) * | 2008-05-23 | 2008-12-24 | 电子科技大学 | High-frequency nonpolarity solid tantalum electrolytic capacitor with lead wire and manufacturing method thereof |
| CN203181275U (en) * | 2012-12-31 | 2013-09-04 | 陈榕锦 | LED drive circuit |
| CN103700501A (en) * | 2013-12-17 | 2014-04-02 | 中国振华（集团）新云电子元器件有限责任公司 | Leading-out process for anode and cathode of end cap-type tantalum capacitor |
| CN104916435A (en) * | 2015-06-28 | 2015-09-16 | 吕杨 | Capacitor |
Non-Patent Citations (1)
| Title |
|---|
| 肖景和: "《电子元器件识别与检测百问百答》", 31 July 2009, 北京：人民邮电出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194242A (en) * | 2018-10-31 | 2019-01-11 | 东莞易盟特电气设备有限公司 | A kind of frequency converter |
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Application publication date: 20160622 |
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