CN105695933A - Niobium-vanadium-silicon-nitrogen nano hard film and preparation method - Google Patents

Niobium-vanadium-silicon-nitrogen nano hard film and preparation method Download PDF

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CN105695933A
CN105695933A CN201610066916.6A CN201610066916A CN105695933A CN 105695933 A CN105695933 A CN 105695933A CN 201610066916 A CN201610066916 A CN 201610066916A CN 105695933 A CN105695933 A CN 105695933A
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film
target
vanadium
niobium
silicon
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许俊华
鞠洪博
喻利花
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Jiangsu University of Science and Technology
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Jiangsu University of Science and Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a niobium-vanadium-silicon-nitrogen nano hard film and a preparation method. The film is prepared in the step of depositing on a hard alloy or ceramic substrate by adopting a dual-target confocal radio frequency reactive sputtering method, Nb is used as a transition layer, the relative content (Si/(Nb+V+Si)) of Si in the film is 10 to 13at.%, and the relative content (V/(Nb+V+Si)) of V is 0 to 17.6at.%; the film is prepared from a solid solution Nb-V-Si-N and an amorphous body Si3N4; the thickness of the film is 2 to 3 [mu]m; the hardness of the film is 29 to 35 GPa, the film-substrate binding force is 4.2 to 9.8 N, and the fracture toughness of the film is 1.1 to 1.7 MPa.m<1/2>. The niobium-vanadium-silicon-nitrogen nano hard film has the advantages of high production efficiency, high hardness and excellent friction performance and can be used as a hard film of an anti-friction nanostructure, and the defects of nonideal mechanical and high-temperature friction and wear properties and the like of existing binary NbN and ternary Nb-Si-N nanocomposite films are overcome.

Description

Niobium-vanadium-silicon-nitrogen nano-hard film and preparation method
Technical field
The invention belongs to ceramic coating technical field, relate to a kind of coating and preparation method thereof, particularly a kind of niobium-vanadium-silicon-nitrogen nano-hard film and preparation method。
Background technology
Development along with modern processing, cutter coat is proposed the harsh service demand such as such as " high-speed and high-temperature ", " in high precision ", " high reliability ", " long-life ", this requires that coating has the mechanical property more more excellent than ordinary cutting tool coating, has excellent friction and wear behavior concurrently simultaneously。Although traditional binary NbN thin film had been widely used in cutter coat field already, but this type coating can not be competent at the more harsh performance requirement that modern processing manufacturing industry is proposed to cutter coat completely。Produce a kind of tool coating that can have excellent mechanical and friction and wear behavior concurrently of upper urgent need at present。
There are some researches show, in traditional magnesium-yttrium-transition metal nitride, introduce the elements such as such as V, Si can be obviously improved mechanics and the friction and wear behavior of thin film。Such as, ternary Nb-Si-N thin film has more excellent mechanical property than binary NbN thin film, and its maximum hardness is up to 45GPa。Owing to the Magn é li phase V with self-lubricating property can be formed in friction-wear test process2O5, TiSiVN thin-film body reveals the high temperature friction and wear behavior of excellence。At present, NbSiN and NbVN thin film has been carried out relatively broad research by Chinese scholars, but the research of quaternary NbVSiN thin film rarely has report。So, V element is incorporated in tradition NbSiN by we, to being obtained in that the novel thin film system of more excellent mechanics and friction and wear behavior。
Summary of the invention
Solve the technical problem that: it is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of quaternary Nb-V-Si-N hard nanometer structural membrane and preparation method thereof。Instant invention overcomes the shortcomings such as existing binary NbN and ternary Nb-Si-N Nanocomposite films mechanics be undesirable with high temperature friction and wear behavior, there is relatively high efficiency, have high rigidity and excellent frictional behaviour concurrently, can as antifriction nanostructured ganoine thin film。
Technical scheme: a kind of niobium-vanadium-silicon-nitrogen nano-hard film, described thin film adopts double; two confocal radio frequency reactive sputtering of target to be deposited on hard alloy or ceramic matrix and prepare, with Nb for transition zone, in thin film Si relative amount (Si/ (Nb+V+Si)) at 10-13at.%, V relative amount (V/ (Nb+V+Si)) between 0-17.6at.%；Thin film is by solid solution Nb-V-Si-N and amorphous Si3N4Constitute；Described film thickness is at 2-3 μm；Described film hardness 29～35GPa, film-substrate cohesion 4.2～9.8N, described film breaks toughness 1.1～1.7MPa.m1/2。
Under-600 DEG C of Service Environment of room temperature, the described thin-film body that V content is 17.6at.% reveals minimum average friction coefficient, its minimum respectively 0.55 (room temperature), 0.84 (200 DEG C), 0.43 (400 DEG C), 0.32 (600 DEG C)；The described thin-film body that V content is 4.5at.% reveals minimum wear rate, its minimum respectively 6.81 × 10-7mm3/ N (room temperature), 8.81 × 10-7mm3/N(200℃)、2.41×10-6mm3/N(400℃)、4.31×10-6mm3/N(600℃)。
The preparation method of niobium-vanadium-silicon-nitrogen nano-hard film, utilizes double; two confocal radio frequency reactive sputtering of target to deposit niobium-vanadium-silicon-nitrogen hard nanometer structural membrane on hard alloy or ceramic matrix, and during deposition, vacuum is < 6.0 × 10-4Pa, with the argon starting the arc, nitrogen is that reaction gas is deposited；Target is fixed as 11cm to the distance of matrix, fixing sputtering pressure 0.3Pa, argon nitrogen flow-rate ratio 10:5, and first depositing Nb on matrix is transition zone, and Nb target and Si target sputtering power are stable respectively is 0-180W at 200W and 60W, V target sputtering power。
Described transition region thickness is 200nm。
Described V target sputtering power is 40W。
Beneficial effect: 1.Nb-V-Si-N thin film is by face-centered cubic Nb-V-Si-N, six side Nb-V-Si-N and amorphous Si3N4Three-phase is constituted。Film hardness first raises with the rising of V content and reduces afterwards, and when V content is 10.3at.%, film hardness is the highest, and its peak is 35GPa。
The introducing of 2.V element can be obviously improved the fracture toughness of thin film。With the rising of V content, film breaks toughness gradually rises, and when V content is 17.6at.%, film breaks toughness is the highest, and its peak is 1.67MPa.m1/2。It is effectively improved the fracture toughness of Nb-Si-N thin film。
3. with the rising of V content in thin film, thin film film-substrate cohesion first raises and reduces afterwards, and when V content is 10.3at.%, thin film film-substrate cohesion is maximum, and its maximum is 9.8N。
4. under-600 DEG C of Service Environment of room temperature, the Nb-V-Si-N thin-film body that V content is 17.6at.% reveals minimum average friction coefficient, its minimum respectively 0.55 (room temperature), 0.84 (200 DEG C), 0.43 (400 DEG C), 0.32 (600 DEG C)；The Nb-V-Si-N thin-film body that V content is 4.5at.% reveals minimum wear rate, its minimum respectively 6.81 × 10-7mm3/ N (room temperature), 8.81 × 10-7mm3/N(200℃)、2.41×10-6mm3/N(400℃)、4.31×10-6mm3/N(600℃)。
Accompanying drawing explanation
Fig. 1 is the Nb-V-Si-N film hardness of the present invention variation relation with V content；
Fig. 2 is Nb-V-Si-N thin film film-substrate cohesion of the present invention and the fracture toughness variation relation with V content；
Fig. 3 is average friction coefficient and wear rate under Nb-V-Si-N thin film difference service temperature of the present invention。
Detailed description of the invention:
The Nb-V-Si-N hard nanometer structural membrane of the present invention is by crystalline state Nb-V-Si-N and amorphous Si3N4Constitute。Adopt high-purity N b target, Si target and the confocal RF-reactively sputtered titanium of V target, it is deposited on the hard alloys such as high-speed steel or ceramic matrix, the thickness of Nb-V-Si-N hard nanometer structural membrane is 2～3 μm, in thin film, Si content (Si/ (Nb+V+Si)) is substantially constant at about 10-13at.%, and V content (V/ (Nb+V+Si)) is between 0-17.6at.%。Nb-V-Si-N film hardness prepared by the method reaches as high as 35GPa, and film-substrate cohesion is up to 9.8N。Under-600 DEG C of Service Environment, the Nb-V-Si-N thin-film body that V content is 17.6at.% reveals minimum average friction coefficient, its minimum respectively 0.55 (room temperature), 0.84 (200 DEG C), 0.43 (400 DEG C), 0.32 (600 DEG C)；The Nb-V-Si-N thin-film body that V content is 4.5at.% reveals minimum wear rate, its minimum respectively 6.81 × 10-7mm3/ N (room temperature), 8.81 × 10-7mm3/N(200℃)、2.41×10-6mm3/N(400℃)、4.31×10-6mm3/ N (600 DEG C)。The Nb-V-Si-N hard nanometer structural membrane of gained of the present invention not only embodies the excellent mechanical performance such as high rigidity, high film-substrate cohesion, and there is relatively low room temperature and high temperature average friction coefficient and wear rate, under-600 DEG C of Service Environment of room temperature, can as antifriction nanostructured ganoine thin film。
The preparation method of the present invention, specific as follows:
Being prepared by of Nb-V-Si-N thin film completes on the compound high-vacuum multi-target magnetic control sputtering equipment of JGP450。This magnetic control sputtering device has three sputtering targets, is separately mounted on the target support of three water-cooleds, and three rustless steel baffle plates are respectively placed at before three targets, are automatically controlled by computer。Nb target (purity is 99.95%), V target (purity is 99.95%) and Si target (purity is 99.9%) are separately mounted on independent radio frequency negative electrode, and target diameter is 75mm。The hard alloys such as high-speed steel or ceramic matrix surface are made mirror finish process, pass into high-purity Ar (99.999%) and N2(99.999%), by adopting pure V and pure Al target to carry out double; two target confocal RF-reactively sputtered titanium method deposition generation Nb-V-Si-N hard nanometer structural membrane on the matrix of the hard alloys such as high-speed steel or pottery。Before deposition Nb-V-Si-N thin film, isolating substrate and ion district by baffle plate, Nb target, Si target and V target carry out the pre-sputtering of 10 minutes。Then on substrate, it is previously deposited the Nb transition zone that thickness is about 200nm。Sputtering time is fixed as 2h, and film thickness is 2-3 μm。
Wherein, the thin film selecting substrate to be monocrystalline silicon piece carries out the research of composition, phase structure；Selecting substrate is the research that stainless composite membrane carries out microhardness and friction and wear behavior。Backing material with dehydrated alcohol and acetone ultrasonic waves for cleaning 15min, loads after drying up with hot-air in the rotatable substrate frame in vacuum chamber respectively。Target is fixed as 11cm to the distance of substrate。Vacuum chamber background vacuum is better than 6.0 × 10-4In vacuum chamber, the argon starting the arc that purity is 99.999% is first passed into after Pa, substrate and ion district is isolated by baffle plate, each target carries out 10min pre-sputtering to remove the oxide impurity of target material surface, then passes to the nitrogen that purity is 99.999% and is deposited as reacting gas。The Nb transition zone of about pre-sputtering 200nm on substrate, to strengthen film-substrate cohesion。Fixing sputtering pressure (0.3Pa), argon nitrogen flow-rate ratio (10/5), Nb target sputtering power (200W) and Si target power output (60W), prepare the Nb-V-Si-N thin film of a series of different V content by changing V target sputtering power。
Embodiment is provided below in conjunction with present disclosure:
Embodiment 1
Main of the present invention is Nb target power output 200W, Si target power output is 60W, V target power output 40W。Now in thin film, V content (V/ (Nb+V+Si), lower same) is 4.5at.%。Thin film microhardness is 32GPa, and fracture toughness is 1.1MPa.m1/2, film-substrate cohesion is 4.2N, and under-600 DEG C of formula cutting experiments of room temperature, thin film average friction coefficient is 0.80 (room temperature), 0.90 (200 DEG C), 0.73 (400 DEG C), 0.58 (600 DEG C)；Wear rate is 6.81 × 10-7mm3/ N (room temperature), 8.81 × 10-7mm3/N(200℃)、2.41×10-6mm3/N(400℃)、4.31×10-6mm3/N(600℃)。
Embodiment 2
Main of the present invention is Nb target power output 200W, Si target power output is 60W, V target power output 90W。Now V content 10.3at.% in thin film。Thin film microhardness is 35GPa, and fracture toughness is 1.3MPa.m1/2, film-substrate cohesion is 9.8N, and under-600 DEG C of formula cutting experiments of room temperature, thin film average friction coefficient is 0.73 (room temperature), 0.85 (200 DEG C), 0.68 (400 DEG C), 0.53 (600 DEG C)；Wear rate is 6.35 × 10-7mm3/ N (room temperature), 7.93 × 10-7mm3/N(200℃)、3.21×10-6mm3/N(400℃)、6.32×10-6mm3/N(600℃)。
Embodiment 3
Main of the present invention is Nb target power output 200W, Si target power output is 60W, V target power output 140W。Now V content 13.8at.% in thin film。Thin film microhardness is 31GPa, and fracture toughness is 1.5MPa.m1/2, film-substrate cohesion is 7.9N, and under-600 DEG C of formula cutting experiments of room temperature, thin film average friction coefficient is 0.67 (room temperature), 0.88 (200 DEG C), 0.54 (400 DEG C), 0.40 (600 DEG C)；Wear rate is 8.11 × 10-7mm3/ N (room temperature), 9.01 × 10-7mm3/N(200℃)、5.81×10-6mm3/N(400℃)、8.57×10-6mm3/N(600℃)。
Embodiment 4
Main of the present invention is Nb target power output 200W, Si target power output is 60W, V target power output 180W。Now V content 17.6at.% in thin film。Thin film microhardness is 29GPa, fracture toughness is 1.7MPa.m1/2, film-substrate cohesion is 6.2N, under-600 DEG C of formula cutting experiments of room temperature, thin film average friction coefficient is 0.55 (room temperature), 0.84 (200 DEG C), 0.43 (400 DEG C), 0.32 (600 DEG C), and wear rate is 9.81 × 10-7mm3/N (room temperature), 9.41 × 10-7mm3/N (200 DEG C), 7.42 × 10-6mm3/N (400 DEG C), 9.83 × 10-6mm3/N (600p DEG C)。

Claims (5)

1. niobium-vanadium-silicon-nitrogen nano-hard film, it is characterized in that described thin film adopts double; two confocal radio frequency reactive sputtering of target to be deposited on hard alloy or ceramic matrix and prepare, with Nb for transition zone, in thin film Si relative amount (Si/ (Nb+V+Si)) at 10-13at.%, V relative amount (V/ (Nb+V+Si)) between 0-17.6at.%；Thin film is by solid solution Nb-V-Si-N and amorphous Si3N4Constitute；Described film thickness is at 2-3 μm；Described film hardness 29～35GPa, film-substrate cohesion 4.2～9.8N, described film breaks toughness 1.1～1.7MPa.m1/2。
2. niobium-vanadium-silicon-nitrogen nano-hard film according to claim 1, it is characterized in that under-600 DEG C of Service Environment of room temperature, the described thin-film body that V content is 17.6at.% reveals minimum average friction coefficient, and the described thin-film body that V content is 4.5at.% reveals minimum wear rate。
3. the preparation method of niobium-vanadium-silicon-nitrogen nano-hard film described in claim 1 or 2, it is characterized in that utilizing double; two confocal radio frequency reactive sputtering of target to deposit niobium-vanadium-silicon-nitrogen hard nanometer structural membrane on hard alloy or ceramic matrix, during deposition, vacuum is < 6.0 × 10-4Pa, with the argon starting the arc, nitrogen is that reaction gas is deposited；Target is fixed as 11cm to the distance of matrix, fixing sputtering pressure 0.3Pa, argon nitrogen flow-rate ratio 10:5, and first depositing Nb on matrix is transition zone, and Nb target and Si target sputtering power are stable respectively is 0-180W at 200W and 60W, V target sputtering power。
4. the preparation method of niobium-vanadium-silicon-nitrogen nano-hard film according to claim 3, it is characterised in that described transition region thickness is 200nm。
5. the preparation method of niobium-vanadium-silicon-nitrogen nano-hard film according to claim 3, it is characterised in that described V target sputtering power is 40W。
CN201610066916.6A 2016-01-29 2016-01-29 Niobium-vanadium-silicon-nitrogen nano hard film and preparation method Pending CN105695933A (en)

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Cited By (1)

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CN110438442A (en) * 2019-07-23 2019-11-12 江西科技师范大学 A kind of nano silicon nitride niobium aluminium yttrium/amorphous silicon nitride two-phase superhard coating and its deposition method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110438442A (en) * 2019-07-23 2019-11-12 江西科技师范大学 A kind of nano silicon nitride niobium aluminium yttrium/amorphous silicon nitride two-phase superhard coating and its deposition method
CN110438442B (en) * 2019-07-23 2021-07-23 江西科技师范大学 Nano niobium aluminum yttrium nitride/amorphous silicon nitride biphase superhard coating and deposition method thereof

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