CN105680693B - A kind of bi-directional DC-DC device with stepping functions - Google Patents
A kind of bi-directional DC-DC device with stepping functions Download PDFInfo
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- CN105680693B CN105680693B CN201610193708.2A CN201610193708A CN105680693B CN 105680693 B CN105680693 B CN 105680693B CN 201610193708 A CN201610193708 A CN 201610193708A CN 105680693 B CN105680693 B CN 105680693B
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- 230000001429 stepping Effects 0.000 title claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims abstract description 31
- 210000003128 Head Anatomy 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagrams Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000000034 methods Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1582—Buck-boost converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0068—Battery or charger load switching, e.g. concurrent charging and load supply
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J2207/20—Charging or discharging characterised by the power electronics converter
Abstract
Description
Technical field
The present invention relates to a kind of bi-directional DC-DC device with stepping functions, belongs to technical field of electronic equipment.
Background technique
Currently, various charge and discharge devices on the market, are all certain single charge function or discharging function of realization, and defeated Voltage is all fixed nonadjustable out, can only meet the charge function or discharging function of certain specific equipment, and people use more Need to carry the charge and discharge device of every kind of equipment needs when kind equipment, it is many kinds of and inconvenient to carry.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of bi-directional DC-DC device with stepping functions, passes through control The conducting of mos pipe processed turns off to select buck or boost circuit, can be powered to charging the battery or loading, and people Can according to need sets itself charging voltage or discharge voltage.
The technical scheme is that: a kind of bi-directional DC-DC device with stepping functions, including battery 1, booster circuit 2, reduction voltage circuit 3, power supply or load 4, single-chip microcontroller 5, driving circuit I6, driving circuit II7, control element etc.；The decompression electricity Road 3 includes that LM2576 switch voltage-stabilizing integrates reduction voltage circuit, capacitor C1, C2, Schottky diode VD1, inductance L1, slide rheostat RW1, resistance R1；Booster circuit 2 include TL494 switching power circuit, capacitor C3, C4, C5, C6, resistance R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, Schottky diode VD2, slide rheostat RW2, RW3, inductance L2, mos pipe T；Driving circuit I6 packet Include resistance R12, R13, R14, R15, triode S1, S2；Driving circuit II7 includes resistance R16, R17, R18, R19, triode S3,S4；Control element includes mos pipe Q1, Q2, Q3, Q4, diode D1, D2, D3, D4.
2 left end of booster circuit is input terminal, and right end is output end；3 left end of reduction voltage circuit is output end, and right end is defeated Enter end.
The anode of battery 1 is connect with the cathode of the drain electrode of mos pipe Q1 and diode D1；The source electrode and boosting electricity of mos pipe Q1 The anode connection of 2 input terminal of road, 2 cathode of booster circuit are connect with battery 1 and 3 cathode of reduction voltage circuit；The output end of booster circuit 2 Anode connect with the anode of diode D2, the cathode of diode D2 with mos pipe Q3 drain electrode and power supply/load 4 are positive connect；Two Pole pipe D1 anode is connected with 3 output head anode of reduction voltage circuit, and 3 input anode of reduction voltage circuit is connect with mos pipe Q3 source electrode, decompression 3 input cathode of circuit is connect with mos pipe Q2 source electrode, and mos pipe Q2 drain electrode is connected with mos pipe Q4 drain electrode, mos pipe Q4 source electrode and electricity Source/load 4 connects；Mos pipe Q1 grid is connected with mos pipe Q2 grid, is connect again with driving circuit I6 after connection, driving circuit I6 It is connect with the PWM1 of single-chip microcontroller 5 mouth；Mos pipe Q3 grid is connected with mos pipe Q4 grid, is connect again with driving circuit II7 after connection, Driving circuit II7 is connect with the PWM2 of single-chip microcontroller 5 mouth.
The input terminal Ui of the reduction voltage circuit 3 passes through 1 foot after parallel connection C1 with the integrated reduction voltage circuit of LM2576 switch voltage-stabilizing It is connected with 3 feet, LM2576 switch voltage-stabilizing integrates 2 feet of reduction voltage circuit and the cathode of Schottky diode VD1 and the one end inductance L1 Connection, the plus earth of Schottky diode VD1, LM2576 switch voltage-stabilizing integrate 3 feet and the 5 feet ground connection of reduction voltage circuit, sliding Rheostat RW1 is connected in parallel on the both ends of capacitor C2 after connecting with resistance R1, one end is connect with the inductance L1 other end after parallel connection, after in parallel Other end ground connection, the adjustable side of slide rheostat RW1 integrate 3 foot of reduction voltage circuit with LM2576 switch voltage-stabilizing and connect.
The input terminal Ui of the booster circuit 2 pass through after shunt capacitance C3 with 8 feet of TL494 switching power circuit, 11 feet, 12 feet are connected with the one end inductance L2, and 6 feet and 5 feet of TL494 switching power circuit are grounded after passing through resistance R2, capacitor C4 respectively, 3 feet of TL494 switching power circuit are connected to one end of capacitor C5 and resistance R4, after capacitor C5 and resistance R3 series connection, with resistance R4 is in parallel, connect after in parallel with 2 feet of TL494 switching power circuit, 2 feet of TL494 switching power circuit pass through resistance respectively It is connect after R5 and resistance R6 with its 14 foot and 15 feet, 14 feet are grounded after passing sequentially through resistance R5 and slide rheostat RW2, TL494 9 feet and 10 feet of switching power circuit pass through cathode, resistance R8 and mos the pipe T grid after resistance R7 with Schottky diode VD2 Connection, the plus earth of Schottky diode VD2, resistance R8 other end ground connection, mos pipe T drain electrode and the inductance L2 other end, resistance R10, slide rheostat RW3, resistance R11 series connection, in parallel with capacitor C6 after series connection, one end and mos pipe T drain electrode connect after parallel connection, The adjustable side of other end ground connection, slide rheostat RW3 is connect by resistance R9 with 1 foot of TL494 switching power circuit.
One end resistance R12 of driving circuit I6 is connect with the PWM1 of single-chip microcontroller 5 mouth, the resistance R12 other end and triode S1 Base stage connection, triode S1 collector are connect with resistance R13, resistance R15 and triode S2 base stage, the connection of the resistance R13 other end VCC, resistance R15 other end ground connection, triode S1 emitter ground connection, triode S2 collector are connect with resistance R14, resistance R14 The other end connects VCC, triode S2 emitter ground connection；One end resistance R16 of driving circuit II7 and the PWM2 mouth company of single-chip microcontroller 5 It connects, the resistance R16 other end is connect with triode S3 base stage, triode S3 collector and resistance R17, resistance R19 and triode S4 Base stage connection, the resistance R17 other end connect VCC, resistance R19 other end ground connection, triode S3 emitter ground connection, triode S4 collection Electrode is connect with resistance R18, and the resistance R18 other end connects VCC, triode S4 emitter ground connection.
The working principle of the invention is: when need to be used as electric discharge in use, single-chip microcontroller 5 PWM1 mouth output signal, pass through drive Dynamic circuit I 6 is mos pipe Q1, Q2 conducting, while the PWM2 mouth of single-chip microcontroller 5 not output signal, and mos pipe Q3, Q4 is made to be off shape State；And since the effect of diode D1 makes electric current cannot flow into reduction voltage circuit 3, due to the effect of diode D4, although mos pipe Q4 In an off state, cathodal current can also input 3 cathode of booster circuit, and battery 1 passes through mos pipe Q1, diode D2, diode D4 It connects with mos pipe Q2 and booster circuit 2, then load 4 is powered again.
When need to be used as charging in use, single-chip microcontroller 5 PWM2 mouth output signal, by driving circuit II7 be mos pipe Q3, Q4 conducting, while the PWM1 mouth of single-chip microcontroller 5 not output signal, keep mos pipe Q1, Q2 in an off state；And due to diode D2 Effect so that electric current is cannot flow into booster circuit 2, due to the effect of diode D4, although mos pipe Q2 is in an off state, cathode Electric current can also input 3 cathode of reduction voltage circuit, and power supply 4 passes through mos pipe Q3, diode D1, diode D2 and mos pipe Q4 and decompression electricity Road 3 is connected, and is then charged again to battery 1.
Specifically used step of the invention is:
Step 1: powering to single-chip microcontroller 5 and VCC.
Step 2: when need to be as electric discharge in use, the PWM1 mouth output signal of single-chip microcontroller 5, is mos by driving circuit I6 Pipe Q1, Q2 conducting, while the PWM2 mouth of single-chip microcontroller 5 not output signal, keep mos pipe Q3, Q4 in an off state；Make booster circuit 2 work, are powered load 4.
Step 3: when need to be as charging in use, the PWM2 mouth output signal of single-chip microcontroller 5, is by driving circuit II7 Mos pipe Q3, Q4 conducting, while the PWM1 mouth of single-chip microcontroller 5 not output signal, keep mos pipe Q1, Q2 in an off state；Make to be depressured Circuit 3 works, and charges to battery 1.
Step 4: when need to be as electric discharge in use, repeating second step；It discharges when that need to be used as in use, repeating third step.
The beneficial effects of the present invention are: the present invention provides a kind of bi-directional DC-DC device with stepping functions, pass through control Mos pipe conducting shutdown processed can be powered, and people to select buck or boost circuit to charging the battery or loading It can according to need sets itself charging voltage or discharge voltage, solve the unicity of common charge and discharge device.
Detailed description of the invention
Fig. 1 is circuit theory schematic diagram of the invention；
Fig. 2 is reduction voltage circuit figure of the present invention；
Fig. 3 is booster circuit figure of the present invention；
Fig. 4 is the use of the new type driving circuit I circuit diagram；
Fig. 5 is the use of the new type driving circuit II circuit diagram.
Each label in figure: 1- battery, 2- booster circuit, 3- reduction voltage circuit, 4- power supply/load, 5- single-chip microcontroller, 6- driving electricity Road I, 7- driving circuit II, C1~C6- capacitor, VD1~VD2- Schottky diode, L1, L2- inductance, RW1~RW3- sliding become Hinder device, R1~R19- resistance, T, Q1, Q2, Q3, Q4-mos pipe, D1, D2, D3, D4- diode, S1, S2, S3, S4- triode.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the invention will be further described.
Embodiment 1: as shown in Figure 1-3, the device include battery 1, booster circuit 2, reduction voltage circuit 3, power supply or load 4, Single-chip microcontroller 5, driving circuit I6, driving circuit II7, control element etc.；The reduction voltage circuit 3 is integrated including LM2576 switch voltage-stabilizing Reduction voltage circuit, capacitor C1, C2, Schottky diode VD1, inductance L1, slide rheostat RW1, resistance R1；Booster circuit 2 includes TL494 switching power circuit, capacitor C3, C4, C5, C6, resistance R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, Schottky Diode VD2, slide rheostat RW2, RW3, inductance L2, mos pipe T；Driving circuit I6 include resistance R12, R13, R14, R15, Triode S1, S2；Driving circuit II7 includes resistance R16, R17, R18, R19, triode S3, S4；Control element includes mos pipe Q1, Q2, Q3, Q4, diode D1, D2, D3, D4.
2 left end of booster circuit is input terminal, and right end is output end；3 left end of reduction voltage circuit is output end, and right end is defeated Enter end.
The anode of battery 1 is connect with the cathode of the drain electrode of mos pipe Q1 and diode D1；The source electrode and boosting electricity of mos pipe Q1 The anode connection of 2 input terminal of road, 2 cathode of booster circuit are connect with battery 1 and 3 cathode of reduction voltage circuit；The output end of booster circuit 2 Anode connect with the anode of diode D2, the cathode of diode D2 with mos pipe Q3 drain electrode and power supply/load 4 are positive connect；Two Pole pipe D1 anode is connected with 3 output head anode of reduction voltage circuit, and 3 input anode of reduction voltage circuit is connect with mos pipe Q3 source electrode, decompression 3 input cathode of circuit is connect with mos pipe Q2 source electrode, and mos pipe Q2 drain electrode is connected with mos pipe Q4 drain electrode, mos pipe Q4 source electrode and electricity Source/load 4 connects；Mos pipe Q1 grid is connected with mos pipe Q2 grid, is connect again with driving circuit I6 after connection, driving circuit I6 It is connect with the PWM1 of single-chip microcontroller 5 mouth；Mos pipe Q3 grid is connected with mos pipe Q4 grid, is connect again with driving circuit II7 after connection, Driving circuit II7 is connect with the PWM2 of single-chip microcontroller 5 mouth.
The input terminal Ui of the reduction voltage circuit 3 passes through 1 foot after parallel connection C1 with the integrated reduction voltage circuit of LM2576 switch voltage-stabilizing It is connected with 3 feet, LM2576 switch voltage-stabilizing integrates 2 feet of reduction voltage circuit and the cathode of Schottky diode VD1 and the one end inductance L1 Connection, the plus earth of Schottky diode VD1, LM2576 switch voltage-stabilizing integrate 3 feet and the 5 feet ground connection of reduction voltage circuit, sliding Rheostat RW1 is connected in parallel on the both ends of capacitor C2 after connecting with resistance R1, one end is connect with the inductance L1 other end after parallel connection, after in parallel Other end ground connection, the adjustable side of slide rheostat RW1 integrate 3 foot of reduction voltage circuit with LM2576 switch voltage-stabilizing and connect.
The input terminal Ui of the booster circuit 2 pass through after shunt capacitance C3 with 8 feet of TL494 switching power circuit, 11 feet, 12 feet are connected with the one end inductance L2, and 6 feet and 5 feet of TL494 switching power circuit are grounded after passing through resistance R2, capacitor C4 respectively, 3 feet of TL494 switching power circuit are connected to one end of capacitor C5 and resistance R4, after capacitor C5 and resistance R3 series connection, with resistance R4 is in parallel, connect after in parallel with 2 feet of TL494 switching power circuit, 2 feet of TL494 switching power circuit pass through resistance respectively It is connect after R5 and resistance R6 with its 14 foot and 15 feet, 14 feet are grounded after passing sequentially through resistance R5 and slide rheostat RW2, TL494 9 feet and 10 feet of switching power circuit pass through cathode, resistance R8 and mos the pipe T grid after resistance R7 with Schottky diode VD2 Connection, the plus earth of Schottky diode VD2, resistance R8 other end ground connection, mos pipe T drain electrode and the inductance L2 other end, resistance R10, slide rheostat RW3, resistance R11 series connection, in parallel with capacitor C6 after series connection, one end and mos pipe T drain electrode connect after parallel connection, The adjustable side of other end ground connection, slide rheostat RW3 is connect by resistance R9 with 1 foot of TL494 switching power circuit.
Embodiment 2: as illustrated in figures 4-5, one end resistance R12 of driving circuit I6 is connect with the PWM1 of single-chip microcontroller 5 mouth, resistance The R12 other end is connect with triode S1 base stage, and triode S1 collector and resistance R13, resistance R15 and triode S2 base stage connect Connect, the resistance R13 other end connect VCC, the resistance R15 other end ground connection, triode S1 emitter ground connection, triode S2 collector with Resistance R14 connection, the resistance R14 other end connect VCC, triode S2 emitter ground connection；One end resistance R16 of driving circuit II7 It is connect with the PWM2 of single-chip microcontroller 5 mouth, the resistance R16 other end is connect with triode S3 base stage, triode S3 collector and resistance R17, resistance R19 are connected with triode S4 base stage, and the resistance R17 other end connects VCC, resistance R19 other end ground connection, triode S3 Emitter ground connection, triode S4 collector are connect with resistance R18, and the resistance R18 other end connects VCC, and triode S4 emitter connects Ground.
Embodiment 3: as shown in Figs. 1-5, a kind of bi-directional DC-DC device with stepping functions, including battery 1, boosting Circuit 2, reduction voltage circuit 3, power supply or load 4, single-chip microcontroller 5, driving circuit I6, driving circuit II7, control element etc.；The drop Volt circuit 3 includes that LM2576 switch voltage-stabilizing integrates reduction voltage circuit, capacitor C1, C2, Schottky diode VD1, inductance L1, sliding change Hinder device RW1, resistance R1；Booster circuit 2 include TL494 switching power circuit, capacitor C3, C4, C5, C6, resistance R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, Schottky diode VD2, slide rheostat RW2, RW3, inductance L2, mos pipe T；Driving electricity Road I6 includes resistance R12, R13, R14, R15, triode S1, S2；Driving circuit II7 includes resistance R16, R17, R18, R19, three Pole pipe S3, S4；Control element includes mos pipe Q1, Q2, Q3, Q4, diode D1, D2, D3, D4.
2 left end of booster circuit is input terminal, and right end is output end；3 left end of reduction voltage circuit is output end, and right end is defeated Enter end.
The anode of battery 1 is connect with the cathode of the drain electrode of mos pipe Q1 and diode D1；The source electrode and boosting electricity of mos pipe Q1 The anode connection of 2 input terminal of road, 2 cathode of booster circuit are connect with battery 1 and 3 cathode of reduction voltage circuit；The output end of booster circuit 2 Anode connect with the anode of diode D2, the cathode of diode D2 with mos pipe Q3 drain electrode and power supply/load 4 are positive connect；Two Pole pipe D1 anode is connected with 3 output head anode of reduction voltage circuit, and 3 input anode of reduction voltage circuit is connect with mos pipe Q3 source electrode, decompression 3 input cathode of circuit is connect with mos pipe Q2 source electrode, and mos pipe Q2 drain electrode is connected with mos pipe Q4 drain electrode, mos pipe Q4 source electrode and electricity Source/load 4 connects；Mos pipe Q1 grid is connected with mos pipe Q2 grid, is connect again with driving circuit I6 after connection, driving circuit I6 It is connect with the PWM1 of single-chip microcontroller 5 mouth；Mos pipe Q3 grid is connected with mos pipe Q4 grid, is connect again with driving circuit II7 after connection, Driving circuit II7 is connect with the PWM2 of single-chip microcontroller 5 mouth.
The input terminal Ui of the reduction voltage circuit 3 passes through 1 foot after parallel connection C1 with the integrated reduction voltage circuit of LM2576 switch voltage-stabilizing It is connected with 3 feet, LM2576 switch voltage-stabilizing integrates 2 feet of reduction voltage circuit and the cathode of Schottky diode VD1 and the one end inductance L1 Connection, the plus earth of Schottky diode VD1, LM2576 switch voltage-stabilizing integrate 3 feet and the 5 feet ground connection of reduction voltage circuit, sliding Rheostat RW1 is connected in parallel on the both ends of capacitor C2 after connecting with resistance R1, one end is connect with the inductance L1 other end after parallel connection, after in parallel Other end ground connection, the adjustable side of slide rheostat RW1 integrate 3 foot of reduction voltage circuit with LM2576 switch voltage-stabilizing and connect.
The input terminal Ui of the booster circuit 2 pass through after shunt capacitance C3 with 8 feet of TL494 switching power circuit, 11 feet, 12 feet are connected with the one end inductance L2, and 6 feet and 5 feet of TL494 switching power circuit are grounded after passing through resistance R2, capacitor C4 respectively, 3 feet of TL494 switching power circuit are connected to one end of capacitor C5 and resistance R4, after capacitor C5 and resistance R3 series connection, with resistance R4 is in parallel, connect after in parallel with 2 feet of TL494 switching power circuit, 2 feet of TL494 switching power circuit pass through resistance respectively It is connect after R5 and resistance R6 with its 14 foot and 15 feet, 14 feet are grounded after passing sequentially through resistance R5 and slide rheostat RW2, TL494 9 feet and 10 feet of switching power circuit pass through cathode, resistance R8 and mos the pipe T grid after resistance R7 with Schottky diode VD2 Connection, the plus earth of Schottky diode VD2, resistance R8 other end ground connection, mos pipe T drain electrode and the inductance L2 other end, resistance R10, slide rheostat RW3, resistance R11 series connection, in parallel with capacitor C6 after series connection, one end and mos pipe T drain electrode connect after parallel connection, The adjustable side of other end ground connection, slide rheostat RW3 is connect by resistance R9 with 1 foot of TL494 switching power circuit.
One end resistance R12 of driving circuit I6 is connect with the PWM1 of single-chip microcontroller 5 mouth, the resistance R12 other end and triode S1 Base stage connection, triode S1 collector are connect with resistance R13, resistance R15 and triode S2 base stage, the connection of the resistance R13 other end VCC, resistance R15 other end ground connection, triode S1 emitter ground connection, triode S2 collector are connect with resistance R14, resistance R14 The other end connects VCC, triode S2 emitter ground connection；One end resistance R16 of driving circuit II7 and the PWM2 mouth company of single-chip microcontroller 5 It connects, the resistance R16 other end is connect with triode S3 base stage, triode S3 collector and resistance R17, resistance R19 and triode S4 Base stage connection, the resistance R17 other end connect VCC, resistance R19 other end ground connection, triode S3 emitter ground connection, triode S4 collection Electrode is connect with resistance R18, and the resistance R18 other end connects VCC, triode S4 emitter ground connection.
Specific embodiments of the present invention are explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned realities Example is applied, it within the knowledge of a person skilled in the art, can also be without departing from the purpose of the present invention It makes a variety of changes.
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| CN201610193708.2A CN105680693B (en) | 2016-03-31 | 2016-03-31 | A kind of bi-directional DC-DC device with stepping functions |
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| CN201610193708.2A CN105680693B (en) | 2016-03-31 | 2016-03-31 | A kind of bi-directional DC-DC device with stepping functions |
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| CN105680693B true CN105680693B (en) | 2019-06-11 |
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| CN106059298A (en) * | 2016-06-27 | 2016-10-26 | 深圳维普创新科技有限公司 | Voltage boosting and voltage reducing converter and method |
| CN106253399B (en) * | 2016-08-24 | 2019-01-01 | 天津市天楚科技有限公司 | A kind of mobile power source |
| US10763853B2 (en) * | 2017-10-02 | 2020-09-01 | Texas Instruments Incorporated | Multi-mode power management circuit |
| CN111130351A (en) * | 2019-11-26 | 2020-05-08 | 国网浙江省电力有限公司湖州供电公司 | Low-delay self-adaptive bidirectional DCDC converter and control method thereof |
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