CN105679363A - Nonvolatile multi-bit micro/nanometer memory for storing temperature signals and application - Google Patents
Nonvolatile multi-bit micro/nanometer memory for storing temperature signals and application Download PDFInfo
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- CN105679363A CN105679363A CN201610028127.3A CN201610028127A CN105679363A CN 105679363 A CN105679363 A CN 105679363A CN 201610028127 A CN201610028127 A CN 201610028127A CN 105679363 A CN105679363 A CN 105679363A
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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Abstract
The invention provides a nonvolatile multi-bit micro/nanometer memory for storing temperature signals. The memory comprises the following components: an insulating substrate, a single potassium element and chlorine element codoped ZnO one-dimensional micro/nano wire, electrodes, leads, and a packaging material. The single potassium element and chlorine element codoped ZnO one-dimensional micro/nano wire is placed on the insulating substrate, and electrodes are respectively welded on double ends, and the electrodes are respectively connected to leads; the packaging material packages the insulating substrate, and the leads are connected to a function generator. Trap level in the single potassium element and chlorine element codoped ZnO one-dimensional micro/nano wire is used for realizing recognition and storage of different temperatures by the memory. The memory has the advantages of simple preparation technology, small size, light weight and portability, high storage density, good information storage stability, rewritable performance, and cyclic utilization; the memory is suitable for industrial heat rejection pipelines, heating pipelines, underground heat, and other fields where temperature sensing and detection are needed.
Description
Technical field
The present invention relates to micro/nano material technical field, relate to micro-/ nano mnemonic.
Background technology
In recent years, the non-volatile RAM that ferroelectric memory memorizer, magnetic resistance mnemonic, phase change memory memorizer, resistive mnemonic etc. are novel obtains extensive concern both domestic and external. Compared with large volume device, micro-/ nano mnemonic has advantages such as consuming energy less, size is little, memory density is big. Based on NiO, ZnO, ZnSnO4、GeSe2Have that preparation technology is simple etc. the mnemonic of one-dimensional micro-/ nano line, low energy consumption, good stability, the advantage such as high read or write speed and cycle-index are widely used in the field of resistance-variable storing device and study. In nonvolatile memory storage, the storage of data is achieved by resistance switch performance, and low resistance state and high-impedance state distinguish " 0 " and " 1 " in corresponding binary system.
Ag nano wire is scattered in polystyrene and forms hybridized nanometer thin film by KarenI.Winey etc. Under high voltages, forming filament effect between Ag nano wire, the transmission for electronics provides express passway, reduces device resistance, so that device is changed into low resistance state from high-impedance state, it is achieved resistance switch effect. ZhongLinWang seminar utilizes the piezoelectric effect of One-Dimensional ZnO micro-/ nano line, has constructed the flexible device of two electrodes. The schottky barrier height between quasiconductor and metal is changed, thus changing the resistance states of device by flexible device is applied stress. In order to realize non-volatile resistance state storage effect, the two ends of SWCN are welded on SiO by JamesM.Tour seminar2On/Si substrate, and build a gate electrode in bottom. Under the effect of gate voltage, electric charge is at CNT and SiO2Interface is captured. This nano-device based on single one-dimensional single tubular construction has resistance switch effect and non-volatile memories function. Along with the increase of state data memory and memory density demand, many bits mnemonic obtains increasing concern in replacing " 0 " and " 1 " binary mnemonic in recent years.WooyoungShim et al. constructs the gate electrode of two superpositions on single one-dimensional Ge/Si core-shell nano line, and the gate electrode of constructed internal layer can control the switch of resistance, and outer layer gate electrode has the effect regulating resistance state.
Although have been obtained for some achievements in research in resistance switch and memory storage research, but in the problem that memory area there is also many worth explorations. As: although heat sensor and thermal detector are well developed, but, there is no a nonvolatile memory storage for temperature signal write up to now; In order to obtain non-volatile and many bit storage performance, researcher can build gate voltage or the device architecture of design complexity when designing device, so that device obtains the memory property of many resistance states.
Summary of the invention
The present invention provides a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal, different temperature signals can be gathered and store for a long time, many bit storage of temperature signal can be realized and overcome the dependence to gate voltage and particular device structure of the existing non-volatile many bits mnemonic
The present invention is achieved by the following technical solutions.
A kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal of the present invention, including the one-dimensional micro-/ nano line (102) of ZnO of dielectric substrate (101), single potassium element and chlorine element codope, electrode one (103), electrode two (104), wire one (105), wire two (106), encapsulating material (107). The one-dimensional micro-/ nano line (102) of ZnO of single potassium element and chlorine element codope is placed in dielectric substrate (101), ZnO one-dimensional micro-/ nano line (102) two ends of single potassium element and chlorine element codope are respectively welded electrode one (103) and electrode two (104), and two end electrodes connects wire one (105) and wire two (106) respectively; One-dimensional for the ZnO of whole single potassium element and chlorine element codope micro-/ nano line (102), electrode one (103) and electrode two (104) are encapsulated in dielectric substrate (101) by encapsulating material (107).
During test, wire one (105) and wire two (106) function forcing function generator (108) are connected.
Preferably, the ZnO one-dimensional micro-/ nano line of described single potassium element and chlorine element codope is the one-dimensional micro-/ nano line in ZnO lattice containing potassium element and chlorine element impurity defect.
Preferably, described dielectric base is aluminium oxide ceramics substrate, aluminium nitride ceramics substrate or silicon nitride ceramics substrate.
Preferably, described metal electrode is aluminum, silver or platinum.
Preferably, described encapsulating material is epoxy resin, urethanes, polydimethylsiloxane or polymethyl methacrylate.
The present invention also provides for the information write-in method of a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal, and its feature comprises the steps: described a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal is placed in 30-300○Arbitrary temperature within C.
The present invention also provides for the information storage means of a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal, and its feature comprises the steps: described a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal is placed in 30-300○Arbitrary temperature within C, then places in room temperature environment.
The present invention also provides for a kind of information erasing method of non-volatile many bits micro-/ nano mnemonic storing temperature signal, and its feature comprises the steps: described a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal is placed in 30-300○Arbitrary temperature within C, then places in room temperature environment, more described a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal applies the DC voltage of 10V.
Compared with prior art, a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal of the present invention has the following advantages.
(1) new breakthrough in application. A kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal of the present invention, achieves first and temperature information is directly translated into the signal of telecommunication the nonvolatile memory storage stored for a long time; Described temperature signal memorizer can have the arbitrary temperature identified in 30 to 300 DEG C of environment, is stored in described temperature signal memorizer according to the size of temperature value is distinguishing by signal, it is achieved many bit storage performance.
(2) simple process, volume are little, lightly portable, compatible good. The temperature signal memorizer of the present invention is achieved with non-volatile and many bit storage without building gate voltage and particular device structure, simplifies production process, saves energy resource consumption; The temperature signal memory construction of the present invention is simple, volume is little, processing technology is simple, with low cost, and without special working environment, there is good compatibility.
(3) efficiently utilize. The temperature signal memorizer of the present invention is without energy input extensive, high intensity, it is only necessary to place in atmospheric environment; The temperature signal memorizer of the present invention can repeating signal write-storage-erasing process, reusable edible; The temperature signal memorizer of the present invention has many bit storage performance, adds memory density. Realize the efficient utilization of the energy.
(4) of many uses. A kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal of the present invention can be used for industry heat removal pipeline, hot duct, underground heat etc. needs to carry out the field of temperature sensing and detection.
Accompanying drawing explanation
Fig. 1 is a kind of typical structure schematic diagram of the temperature signal memorizer of the present invention. Wherein, 101 it is dielectric substrate, 102 is the one-dimensional micro-/ nano line of ZnO of single potassium element and chlorine element codope, 103 is encapsulating material for wire two, 107,108 is function performance generator for electrode two, 105 for wire one, 106 for electrode one, 104.
Fig. 2 is the temperature signal memorizer of present invention current voltage characteristics curve at 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C.
Fig. 3 be the present invention temperature signal memorizer 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C information write after, the stability test of memory property under room temperature.
Fig. 4 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 100 DEG C at the temperature signal of write, and the bold portion on picture top is the electric current in test process, and the dotted portion of picture bottom is the operation voltage in test process.
Fig. 5 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 150 DEG C at the temperature signal of write, and the bold portion on picture top is the electric current in test process, and the dotted portion of picture bottom is the operation voltage in test process.
Fig. 6 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 200 DEG C at the temperature signal of write, and the bold portion on picture top is the electric current in test process, and the dotted portion of picture bottom is the operation voltage in test process.
Fig. 7 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 250 DEG C at the temperature signal of write, and the bold portion on picture top is the electric current in test process, and the dotted portion of picture bottom is the operation voltage in test process.
Fig. 8 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 300 DEG C at the temperature signal of write, and the bold portion on picture top is the electric current in test process, and the dotted portion of picture bottom is the operation voltage in test process.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described. Obviously; described embodiment is only a part of embodiment of the present invention, rather than whole embodiments, based on the embodiment in the present invention; the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly falls into scope. Secondly, the present invention is described in detail in conjunction with schematic diagram, and when describing the embodiment of the present invention in detail, for purposes of illustration only, described schematic diagram is example, it should not limit the scope of protection of the invention at this.
The present invention provides a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal, when without grid voltage and particular device structure, can there is the arbitrary temperature identified in 30 to 300 DEG C of environment, size according to temperature value is distinguishing to be stored in described temperature signal memorizer by signal, realizing many bit storage performance, can be used for industry heat removal pipeline, hot duct, underground heat etc. needs to carry out the field of temperature sensing and detection. The temperature signal memorizer of the present invention utilizes the trap level in the one-dimensional micro-/ nano line of ZnO of single potassium element and chlorine element codope, by temperature, trap level electron excitation is regulated and controled the resistance states of device, it is achieved the many bit storage performance to temperature signal.
Fig. 1 is illustrated that the typical structure schematic diagram of the temperature signal memorizer of the present invention includes the one-dimensional micro-/ nano line 102 of ZnO of dielectric base 101, single potassium element and chlorine element codope, electrode 1, electrode 2 104, wire 1, wire 2 106, encapsulating material 107, function performance generator 108 successively. Described dielectric base 101 is made up of aluminium oxide ceramics substrate, aluminium nitride ceramics substrate, silicon nitride ceramics substrate any material. One-dimensional its preparation process of micro-/ nano line that the one-dimensional micro-/ nano line 102 of ZnO of described single potassium element and chlorine element codope is in ZnO lattice containing potassium element and chlorine element impurity defect is.
1, corundum ceramic substrate is cleaned.
2, high-purity ZnO and carbon dust are mixed with the ratio of 2:1, add the potassium chloride mixing that mass ratio is 5%, the raw material mixed is put in the ceramic boat of cleaning, ceramic boat is slowly pushed into earthenware weather, then will be equipped with ceramic substrate and put into leeward, and ensure just to be directed at thermocouple place equipped with the ceramic boat of mixture, in order to better control over temperature, allow it effectively evaporate.
3, tube furnace temperature is set and regulates gas flow rate. First under non-heated condition, allowing pre-logical argon 20min, the air in discharge pipe in earthenware, to control air velocity is 100sccm simultaneously, and controls intraductal atmospheric pressure, is heated to 980 DEG C with programming rate 10 DEG C per minute by tube furnace, keeps 2 hours.
Described metal electrode 1, electrode 2 104, selected from aluminum, silver, platinum, gold.
Described encapsulated layer in epoxy resin, urethanes, polydimethylsiloxane, the polymethyl methacrylate any one.
In conjunction with Fig. 1, the preparation process of a kind of non-volatile many bits micro-/ nano mnemonic storing temperature signal of the present invention includes.
1, the aluminium oxide ceramics substrate that dielectric base 101 adopts specification to be 20mm 10mm 1mm, with dehydrated alcohol and deionized water ultrasonic cleaning for several times, heat treatment 10min under 400 DEG C of atmospheric environments, eliminate base internal thermal stress.
2, the one-dimensional micro-/ nano line 102 of the ZnO of single potassium element and chlorine element codope adopts diameter to be 10 μm of length is the nano wire of 473 μm, the one-dimensional micro-/ nano line 102 of ZnO of dispersed individual potassium element and chlorine element codope is also horizontally placed in dielectric base 101, being respectively welded electrode 1, electrode 2 104 at ZnO one-dimensional micro-/ nano line 102 two ends of single potassium element and chlorine element codope, electrode one, electrode two are silver slurry.
3, treating under room temperature that silver slurry is dry, weld copper cash as wire 1 at electrode 1, electrode 2 104 welds copper cash as wire 1, draws circuit.
4, the encapsulating material 107 polydimethylsiloxane (PDMS) that coating pre-coordination is good, and be positioned on heated at constant temperature panel, it is warming up to 150 DEG C and solidifies 2h.
5, the external circuit function generator 108 that copper cash is drawn is connected, complete the preparation of thermal electric generator.
The information write at temperature signal respectively 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C of the temperature signal memorizer of the present invention, storage, method for deleting and principle is introduced respectively below in conjunction with Fig. 2, Fig. 3, Fig. 4.
Embodiment 1.
Fig. 2 is the temperature signal memorizer of present invention current voltage characteristics curve at 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C. Described temperature signal memorizer is placed in temperature environment to be measured and tested, five temperature 100 DEG C that ambient temperature to be measured is arbitrarily chosen in being 30 to 300 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C. As in figure 2 it is shown, be that in 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C of environment, described temperature signal memorizer has different resistance states, and different temperature can be made different responses in temperature. The one-dimensional micro-/ nano line of ZnO of potassium element and chlorine element codope has continuous print trap level, and different temperature environments can excite the electronics in the trap level of different depth. After the electronics in trap is heated effusion trap, the resistance states of temperature signal memorizer just there occurs change. Described temperature signal memorizer is had and identifies that the detection of different temperatures signal can sensing function.
Embodiment 2.
Fig. 3 be the present invention temperature signal memorizer 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C information write after, the stability test of memory property under room temperature. It is specially under the environment that first temperature signal memorizer is individually positioned in 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C and carries out temperature information write, placing in room temperature environment by temperature signal memorizer subsequently, under 0.5V biases, tester electric current is over time. As shown in Figure 3, after 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C of temperature signals are respectively written into described temperature signal memorizer, described temperature signal memorizer is moved to room temperature environment from write environment, it has been found that described temperature signal memorizer can keep different temperature write information at room temperature for a long time. After the electronics in the one-dimensional micro-/ nano line trap of the ZnO of potassium element and chlorine element codope is heated effusion trap, empty trap is in metastable state, therefore write temperature is removed background storage and is remained to resistance states when keeping temperature to write, make described temperature signal memorizer that different temperature have many bit storage performance, and there is good storage stability.
Embodiment 3.
Fig. 4 to Fig. 8 is the temperature signal memorizer of the present invention is the repetitive read-write performance test curve at 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C at the temperature signal of write.Particularly as follows: step one, temperature signal memorizer is individually positioned under the environment of 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and 300 DEG C and carries out temperature information write; Step 2, places temperature signal memorizer in room temperature environment, and write signal is stored; Step 3, the voltage applying 10V to described temperature signal memorizer carries out signal erase process; Step 4, cancels the 10V voltage of applying, and temperature signal memorizer restPoses; Repetitive cycling step one detects the repeatability of described temperature signal memorizer to step 4, except being 5V DC voltage except erasing voltage, the read voltage of all processes is the DC voltage of 0.5V, and in Fig. 4-8, dotted portion is the operation voltage applied in test process. The circulation readwrite performance figure of the temperature signal memorizer as described in respectively 100 DEG C, 150 DEG C, 200 DEG C, 250 DEG C and the 300 DEG C temperature signal writes of Fig. 4 to Fig. 8 bold portion. Described temperature signal memorizer is moved to room temperature environment from write environment, it has been found that described temperature signal memorizer can keep different temperature write information at room temperature for a long time, until applying 10V voltage, the temperature signal of storage is wiped free of. Electronics in the one-dimensional micro-/ nano line trap of ZnO of potassium element and chlorine element codope is heated after effusion trap, empty trap is in metastable state, and when the external world applies in high-tension situation, empty trap is filled with electrons again, memorizer returns to original state, and the signal of storage is wiped free of. As shown in Fig. 4 to Fig. 8, different temperature is had the performance of discernible memory property and repetitive read-write by described temperature signal memorizer so that described temperature signal memorizer has good recycling performance.
Claims (8)
1. can store non-volatile many bits micro-/ nano mnemonic of temperature signal, it is characterized in that including the one-dimensional micro-/ nano line (102) of ZnO of dielectric substrate (101), single potassium element and chlorine element codope, electrode one (103), electrode two (104), wire one (105), wire two (106), encapsulating material (107). The one-dimensional micro-/ nano line (102) of ZnO of single potassium element and chlorine element codope is placed in dielectric substrate (101), ZnO one-dimensional micro-/ nano line (102) two ends of single potassium element and chlorine element codope are respectively welded electrode one (103) and electrode two (104), and two end electrodes connects wire one (105) and wire two (106) respectively; One-dimensional for the ZnO of whole single potassium element and chlorine element codope micro-/ nano line (102), electrode one (103) and electrode two (104) are encapsulated in dielectric substrate (101) by encapsulating material (107).
2. the non-volatile many bits micro-/ nano mnemonic storing temperature signal according to claim 1, is characterized in that the ZnO one-dimensional micro-/ nano line of described single potassium element and chlorine element codope is the one-dimensional micro-/ nano line in ZnO lattice containing potassium element and chlorine element impurity defect.
3. the non-volatile many bits micro-/ nano mnemonic storing temperature signal according to claim 1, is characterized in that described dielectric base is aluminium oxide ceramics substrate, aluminium nitride ceramics substrate or silicon nitride ceramics substrate.
4. the non-volatile many bits micro-/ nano mnemonic storing temperature signal according to claim 1, is characterized in that described metal electrode is aluminum, silver or platinum.
5. the non-volatile many bits micro-/ nano mnemonic storing temperature signal according to claim 1, is characterized in that described encapsulating material is epoxy resin, urethanes, polydimethylsiloxane or polymethyl methacrylate.
6. the information write-in method of non-volatile many bits micro-/ nano mnemonic of the stored temperature signal described in claim 1, its spy levies described memory device in 30-300○Arbitrary temperature within C.
7. the information storage means of non-volatile many bits micro-/ nano mnemonic of the stored temperature signal described in claim 1, is characterized in that described memory device in 30-300○Arbitrary temperature within C, then places in room temperature environment.
8. the information erasing method of non-volatile many bits micro-/ nano mnemonic of the stored temperature signal described in claim 1, is characterized in that described memory device in 30-300○Arbitrary temperature within C, then places in room temperature environment, more described memorizer applies the DC voltage of 10V.
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