CN105676264A - Semiconductor detector - Google Patents
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- CN105676264A CN105676264A CN201610187826.2A CN201610187826A CN105676264A CN 105676264 A CN105676264 A CN 105676264A CN 201610187826 A CN201610187826 A CN 201610187826A CN 105676264 A CN105676264 A CN 105676264A
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
- G01T1/366—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with semi-conductor detectors
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Abstract
The invention provides a semiconductor detector, which comprises a semiconductor crystal, a cathode, an anode and at least one step electrode, wherein the semiconductor crystal comprises a top surface, a bottom surface and at least one side surface; the cathode, the anode and the step electrode are all conductive thin films deposited on the surface of the semiconductor crystal; the cathode is arranged on the bottom surface of the semiconductor crystal; the anode is arranged on the top surface of the semiconductor crystal; the step electrodes are arranged on at least one side surface of the semiconductor crystal; and the step electrode comprises multiple sub electrodes. Compared with the prior art, the semiconductor detector can improve the energy resolution.
Description
This case is application number is the division of 201310149397.6.
Technical field
The present invention relates to detector technology field, particularly to a kind of semiconductor detector.
Background technology
Utilizing detector measurement high-energy ray such as X ray or gamma-ray power spectrum is one of the important means of nuclide identification. This kind of detector has been widely used for the fields such as nuclear radiation protection, core safety check, environmental conservation and Homeland Security, for detection of radioactive material. In prior art, this kind of detector is broadly divided into two classes: a class is with NaI (Tl) scintillator detector being representative, another kind of be representative with HpGe (HPGe) semiconductor detector.
Scintillator detector has prepares simple and cheap advantage. Portable gamma spectrum meter at detection onsite application is generally NaI or CsI scintillator detector. But, the energy resolution of scintillator detector is relatively low, and its energy resolution is 6%-7%662keV, it is impossible to meet the measurement requirement of complicated power spectrum fine structure.
The energy resolution of HpGe semiconductor detector is higher than scintillator detector. But, HpGe semiconductor detector is only capable of under liquid nitrogen temperature (77K) preserve and use, it is impossible at room temperature use. On the one hand, HpGe semiconductor detector needs configuration low-temperature (low temperature) vessel and vacuum chamber, causes that its volume and cost increase; On the other hand, when using HpGe semiconductor detector, it is necessary to add liquid nitrogen continually, causing that it cannot meet the instructions for use that field detection is on-the-spot, use scope is restricted.
In recent years, occurring in that the another kind of semiconductor detector that can at room temperature work, this kind of semiconductor detector uses material to be HgI2, GaAs, TiBr, CdTe, CdZnTe (cadmium-zinc-teiluride is abbreviated as CZT), CdSe, GaP, HgS, PbI2Or the semiconductor crystal of AlSb. The advantage that this kind of semiconductor detector has that volume is little, is easy to carry, energy resolution is high, detection efficient is high and can at room temperature work. At present, this kind of semiconductor detector is widely used to the fields such as environmental monitoring, nuclear medicine, industrial nondestructive testing, safety inspection, nuclear weapon prominent anti-, Aero-Space, astrophysics and high-energy physics.
The forbidden band of CdZnTe semiconductor crystal is 1.57eV, and its impedance is up to 1010Ω/cm, its average atomic number is 49.1, and its density is 5.78g/cm3, generating the pair of electrons-hole energy to needing is 4.64eV, is can at room temperature work and can process 2,000,000 photons/(s mm2) unique semi-conducting material.Research shows, the best performance of semiconductor detector using CdZnTe semiconductor crystal is different, be most suitable at room temperature using.
Compared with scintillator detector, the energy resolution of CdZnTe detector increases, and its energy resolution is apparently higher than NaI scintillator detector. Compared with HPGe detector, the forbidden band of CdZnTe detector is wider, and impedance is relatively big, and carrier concentration is relatively low so that it is after being biased, dark current is less, is a kind of semiconductor detector that can at room temperature work.
But, CdZnTe crystal is generally uneven, there is fault of construction, and therefore the mobility of the carrier of CdZnTe crystal is relatively low, and the drift time of carrier is longer, it is easy to producing carrier (especially hole) Trapping Phenomenon, namely carrier lifetime is shorter. The Trapping Phenomenon of carrier causes that the energy resolution of CdZnTe semiconductor detector reduces, and adopts CdZnTe semiconductor detector to measure the power spectrum obtained and mental retardation tail phenomenon occurs.
In order to improve the energy resolution of CdZnTe semiconductor detector, CdZnTe semiconductor detector generally adopts the electrode with unipolar charge sensitivity characteristics. This kind has the electrode of unipolar charge sensitivity characteristics and forms electric field, and high-energy ray and crystal interact the electronics produced and are moved to different directions by electric field action in hole, and wherein electronics is to anode movement, and hole is to cathode motion. Owing to the weight electromotive force of the position away from passive electrode is only small, therefore hole is very little to the contribution of induced signal in the motion of the position away from passive electrode, and induced signal is mainly contributed by electronics, thus realizing the semiconductor detector that unipolar charge is sensitive. In prior art, the CdZnTe semiconductor detector based on unipolar charge sensitivity characteristics specifically includes that parallel Frisch grid-type (ParallelFrischGrid), coplanar Frisch grid-type (CoplanarFrischGrid), hemispherical (Hemisphere), shape for hat (CAPture), quasi-dome-type (Quasi-hemisphere) and small pixel type (Pixelated) etc.
The semiconductor detector that unipolar charge is sensitive can reduce to a certain extent because hole migration speed is slow and the life-span short harmful effect that energy resolution is brought. But, the electronics of motion can be influenced by the impact of CdZnTe semiconductor die volume defect and is captured, when, drift time length low particularly in electric field intensity, electronics is captured comparatively notable, this causes the amplitude output signal fluctuation of passive electrode of CdZnTe semiconductor detector, thus affecting the energy resolution of CdZnTe semiconductor detector.
In sum, it is necessary to improve the energy resolution of CdZnTe semiconductor detector further.
Summary of the invention
It is an object of the invention to provide a kind of semiconductor detector.
Semiconductor detector provided by the invention includes semiconductor crystal, negative electrode, anode and at least one step electrode;
Described semiconductor crystal includes end face, bottom surface and at least one side; Described negative electrode, described anode and described step electrode are all the conductive film being deposited on described semiconductor die surface;
Described negative electrode is located on the described bottom surface of described semiconductor crystal, and described anode is located on the described end face of described semiconductor crystal, and described step electrode is located at least one side of described semiconductor crystal;
Described step electrode includes multiple sub-electrode.
Preferably, described semiconductor crystal be shaped as cuboid.
Preferably, described anode is rectangle and covers the subregion in the centre position of described end face;Described semiconductor detector includes the first step electrode and the second step electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side.
Preferably, described negative electrode covers the Zone Full of described bottom surface.
Preferably, described negative electrode includes the multiple rectangular sub-electrode being located on described bottom surface equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes.
Preferably, the long limit of the sub-electrode of described negative electrode and the long limit of described anode are parallel.
Preferably, the long limit of the sub-electrode of described negative electrode and the long limit of described anode are vertical.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes; Described second ladder electrode package draws together the multiple sub-electrodes being located at equably on described second side, the sub-electrode of described second step electrode is identical with the number of the sub-electrode of described first step electrode and shape, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode.
Preferably, described first step electrode includes being located at the multiple rectangular sub-electrode on described first side and in the subregion adjacent with described first side of described end face equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes; Described second ladder electrode package draws together the multiple sub-electrodes being located at equably on described second side and in the subregion adjacent with described second side of described end face, the sub-electrode of described second step electrode is identical with the number of the sub-electrode of described first step electrode and shape, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode.
Preferably, the corner angle chamfering of the described bottom surface of described semiconductor crystal and described first side and described second junction, side, described negative electrode covers the Zone Full of the described bottom surface after the chamfering of described semiconductor crystal.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes; Described second ladder electrode package draws together the multiple sub-electrodes being located at equably on described second side, the sub-electrode of described second step electrode is identical with the number of the sub-electrode of described first step electrode and shape, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode.
Preferably, the section of described semiconductor crystal is in sector, and described bottom surface is arcwall face, and described end face is rectangle, and described anode is located on described end face and covers the Zone Full of described end face.
Preferably, described semiconductor detector includes the first step electrode and the second step electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes; Described second ladder electrode package draws together the multiple sub-electrodes being located at equably on described second side, the sub-electrode of described second step electrode is identical with the number of the sub-electrode of described first step electrode and shape, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode.
Preferably, described anode is rounded or oval and cover the subregion in centre position of described end face;Described negative electrode covers the Zone Full of described bottom surface; Described semiconductor detector includes the first step electrode, the second step electrode, the 3rd step electrode and fourth order ladder electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side, and described 3rd step electrode is respectively arranged on fourth order ladder electrode on the 3rd relative side of the position of described semiconductor crystal and the 4th side.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode, the sub-electrode that described first step electrode, described second step electrode, described 3rd step electrode are identical with the height of described fourth order ladder electrode is connected with each other circlewise.
Preferably, described semiconductor crystal be shaped as cylinder.
Preferably, described anode is rounded or oval and cover the subregion in centre position of described end face; Described negative electrode covers the Zone Full of described bottom surface; Described semiconductor detector includes the first step electrode; Described first step electrode is located on the first side of described semiconductor crystal.
Preferably, described first step electrode includes the sub-electrode of the multiple annulars being located on described first side equably, is provided with gap between two sub-electrodes of its arbitrary neighborhood; The sub-electrode of described first step electrode is parallel with described end face.
Preferably, described anode is rectangle and covers the Zone Full of described end face; Described negative electrode covers the Zone Full of described bottom surface; Described semiconductor detector includes the first step electrode, the second step electrode, the 3rd step electrode and fourth order ladder electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side, and described 3rd step electrode is respectively arranged on fourth order ladder electrode on the 3rd relative side of the position of described semiconductor crystal and the 4th side.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode,The sub-electrode that described first step electrode, described second step electrode, described 3rd step electrode are identical with the height of described fourth order ladder electrode is connected with each other circlewise.
Preferably, described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode, the sub-electrode that the height of two the described step electrodes being located on the described side that any two of described semiconductor crystal is adjacent is equal is provided with breach in the junction of these two described sides.
Preferably, the material of described semiconductor crystal includes HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or AlSb.
Preferably, the material of described negative electrode, described anode and described step electrode includes Au, Pt, Ag, Cu, Al or ITO.
There is advantages that
The semiconductor detector of the present invention have employed the unipolar charge sensitive technologies of prior art, by arranging step electrode, average field intensity within semiconductor crystal is increased, the increase of average field intensity makes shorten the drift time of carrier, the carrier drift time shortens the probability that carrier is captured and reduces, so that the energy resolution of semiconductor detector improves.
Accompanying drawing explanation
The structural representation of the semiconductor detector that Fig. 1 provides for the embodiment of the present invention 1;
Fig. 2 is the energy spectrogram that the measurement of 662KeV gamma ray is obtained by the semiconductor detector adopting embodiment 1;
The structural representation of the semiconductor detector that Fig. 3 provides for the embodiment of the present invention 2;
The structural representation of the semiconductor detector that Fig. 4 provides for the embodiment of the present invention 3;
The structural representation of the semiconductor detector that Fig. 5 provides for the embodiment of the present invention 4;
The structural representation of the semiconductor detector that Fig. 6 provides for the embodiment of the present invention 5;
The structural representation of the semiconductor detector that Fig. 7 provides for the embodiment of the present invention 6;
The structural representation of the semiconductor detector that Fig. 8 provides for the embodiment of the present invention 7;
The structural representation of the semiconductor detector that Fig. 9 provides for the embodiment of the present invention 8;
The structural representation of the semiconductor detector that Figure 10 provides for the embodiment of the present invention 9;
The structural representation of the semiconductor detector that Figure 11 provides for the embodiment of the present invention 10;
The structural representation of the semiconductor detector that Figure 12 provides for the embodiment of the present invention 11;
The structural representation of the semiconductor detector that Figure 13 provides for the embodiment of the present invention 12.
Detailed description of the invention
Below in conjunction with drawings and Examples, the summary of the invention of the present invention is described in further detail.
Embodiment 1
As it is shown in figure 1, the semiconductor detector 100 that the present embodiment provides includes semiconductor crystal 101, negative electrode 102, anode the 103, first step electrode 104 and the second step electrode 105.
In the present embodiment, the shape of semiconductor crystal 101 is such as cuboid.The material of semiconductor crystal 101 includes HgI2、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI2Or AlSb.
In the present embodiment, negative electrode 102, anode the 103, first step electrode 104 and the second step electrode 105 are the conductive film being deposited on semiconductor crystal 101 surface. The material of negative electrode 102, anode the 103, first step electrode 104 and the second step electrode 105 includes Au, Pt, Ag, Cu, Al or ITO. Negative electrode 102 is located on the bottom surface 101-1 of semiconductor crystal 101, and covers the Zone Full of the bottom surface 101-1 of semiconductor crystal 101. Anode 103 is located at the end face 101-2 of semiconductor crystal 101, and covers the subregion in the centre position of end face 101-2. Preferably, anode 103 is in such as rectangle, and two shorter limits of anode 103 and two longer limits of end face 101-2 are respectively superposed, and namely the long limit of anode 103 is equal with the minor face of end face 101-2; Two longer limits of anode 103 are parallel with the two of end face 101-2 shorter limits.
In the present embodiment, the first step electrode 104 is located on the first side 101-3 of semiconductor crystal 101, and the second step electrode 105 is located on the second side 101-4 of semiconductor crystal 101, and the position of the first side 101-3 and the second side 101-4 is relative. First step electrode 104 includes the multiple rectangular sub-electrode being located on the first side 101-3, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes. Second step electrode 105 is located on the second side 101-4 of semiconductor crystal 101, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes. Each sub-electrode of first step electrode 104 can be located on the first side 101-3 unevenly. Each sub-electrode of second step electrode 105 can be located on the second side 101-4 unevenly. Preferably, each sub-electrode of the first step electrode 104 is located on the first side 101-3 equably. Each sub-electrode of second step electrode 105 is located on the second side 101-4 equably. The width of each sub-electrode of the first step electrode 104 can be different. The width of each sub-electrode of the second step electrode 105 can be different. Preferably, the width of each sub-electrode of the first step electrode 104 is identical. The width of each sub-electrode of the second step electrode 105 is identical. Number and the shape of the sub-electrode of the second step electrode 105 and the sub-electrode of the first step electrode 104 can be different. Preferably, number and the shape of the sub-electrode of the second step electrode 105 and the sub-electrode of the first step electrode 104 are identical, and the position of the sub-electrode of the sub-electrode of the second step electrode 105 and the first step electrode 104 is relative one by one. Preferably, the first step electrode 104 is parallel with the long limit of anode 103 with the long limit of the sub-electrode of the second step electrode 105.
The energy time spectrum of high-energy ray measured by the semiconductor detector of application the present embodiment, applies ladder bias on the first step electrode 104 and the second step electrode 105. Specifically, according to by the negative electrode 102 order to anode 103, the voltage applied on each sub-electrode of the first step electrode 104 and the second step electrode 105 raises successively. Preferably, the voltage applied on the sub-electrode that any two height of the first step electrode 104 and the second step electrode 105 is equal is equal.
The semiconductor detector that the present embodiment provides is by arranging two step electrodes, average field intensity within semiconductor crystal 101 is increased, the increase of average field intensity makes shorten the drift time of carrier, the carrier drift time shortens the probability that carrier is captured and reduces, so that the energy resolution of the semiconductor detector of the present embodiment improves.
Fig. 2 is the energy spectrogram that the measurement of 662KeV gamma ray is obtained by the semiconductor detector 100 adopting the present embodiment. As seen from Figure 2, the gamma-ray spectrometry of the semiconductor detector 100 of the present embodiment occurs in that obvious 662keV full energy peak, and its energy resolution is 1.1%662keV. This fully shows, compared with the semiconductor detector of prior art, the energy resolution of the semiconductor detector 100 of the present embodiment significantly improves.
Embodiment 2
As shown in Figure 3, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: negative electrode 102 includes the multiple rectangular sub-electrode being located on the 101-1 of bottom surface, and it being provided with gap between the two of its arbitrary neighborhood sub-electrodes, the long limit of each sub-electrode of negative electrode 102 is parallel with the long limit of anode 103. Each sub-electrode of negative electrode 102 can be located on the 101-1 of bottom surface unevenly. Preferably, each sub-electrode of negative electrode 102 is located on the 101-1 of bottom surface equably. The width of each sub-electrode of negative electrode 102 can be different. Preferably, the width of each sub-electrode of negative electrode 102 is identical. All the other are identical with embodiment 1.
Embodiment 3
As shown in Figure 4, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: negative electrode 102 includes the multiple rectangular sub-electrode being located on the 101-1 of bottom surface, and it being provided with gap between the two of its arbitrary neighborhood sub-electrodes, the long limit of each sub-electrode of negative electrode 102 is vertical with the long limit of anode 103. Each sub-electrode of negative electrode 102 can be located on the 101-1 of bottom surface unevenly. Preferably, each sub-electrode of negative electrode 102 is located on the 101-1 of bottom surface equably. The width of each sub-electrode of negative electrode 102 can be different. Preferably, the width of each sub-electrode of negative electrode 102 is identical. All the other are identical with embodiment 1.
Embodiment 4
As shown in Figure 5, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the first step electrode 104 is located on the first side 101-3 of semiconductor crystal 101 and in the subregion adjacent for side 101-3 with first of end face 101-2, namely the parton electrode of the first step electrode 104 is located on the first side 101-3, and remainder sub-electrode is located in the subregion adjacent for side 101-3 with first of end face 101-2; Second step electrode 105 is located on the second side 101-4 of semiconductor crystal 101 and in the subregion adjacent for side 101-4 with second of end face 101-2, namely the parton electrode of the second step electrode 105 is located on the second side 101-4, and remainder sub-electrode is located in the subregion adjacent for side 101-4 with second of end face 101-2. All the other are identical with embodiment 1.
Embodiment 5
As shown in Figure 6, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the first step electrode 104 is located on the first side 101-3 of semiconductor crystal 101 and in the subregion adjacent for side 101-3 with first of end face 101-2, namely the parton electrode of the first step electrode 104 is located on the first side 101-3, and remainder sub-electrode is located in the subregion adjacent for side 101-3 with first of end face 101-2; Second step electrode 105 is located on the second side 101-4 of semiconductor crystal 101 and in the subregion adjacent for side 101-4 with second of end face 101-2, namely the parton electrode of the second step electrode 105 is located on the second side 101-4, and remainder sub-electrode is located in the subregion adjacent for side 101-4 with second of end face 101-2;Negative electrode 102 includes the multiple rectangular sub-electrode being located on the 101-1 of bottom surface, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, and the long limit of each sub-electrode of negative electrode 102 is parallel with the long limit of anode 103. Each sub-electrode of negative electrode 102 can be located on the 101-1 of bottom surface unevenly. Preferably, each sub-electrode of negative electrode 102 is located on the 101-1 of bottom surface equably. The width of each sub-electrode of negative electrode 102 can be different. Preferably, the width of each sub-electrode of negative electrode 102 is identical. All the other are identical with embodiment 1.
Embodiment 6
As shown in Figure 7, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the first step electrode 104 is located on the first side 101-3 of semiconductor crystal 101 and in the subregion adjacent for side 101-3 with first of end face 101-2, namely the parton electrode of the first step electrode 104 is located on the first side 101-3, and remainder sub-electrode is located in the subregion adjacent for side 101-3 with first of end face 101-2; Second step electrode 105 is located on the second side 101-4 of semiconductor crystal 101 and in the subregion adjacent for side 101-4 with second of end face 101-2, namely the parton electrode of the second step electrode 105 is located on the second side 101-4, remainder sub-electrode is located in the subregion adjacent for side 101-4 with second of end face 101-2, negative electrode 102 includes the multiple rectangular sub-electrode being located on the 101-1 of bottom surface, and it being provided with gap between the two of its arbitrary neighborhood sub-electrodes, the long limit of each sub-electrode of negative electrode 102 is vertical with the long limit of anode 103. Each sub-electrode of negative electrode 102 can be located on the 101-1 of bottom surface unevenly. Preferably, each sub-electrode of negative electrode 102 is located on the 101-1 of bottom surface equably. The width of each sub-electrode of negative electrode 102 can be different. Preferably, the width of each sub-electrode of negative electrode 102 is identical. All the other are identical with embodiment 1.
Embodiment 7
As shown in Figure 8, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the bottom surface 101-1 and the first side 101-3 of semiconductor crystal 101 and the corner angle chamfering of the second 101-4 junction, side, negative electrode 102 covers the Zone Full of the bottom surface 101-1 after the chamfering of semiconductor crystal 101. All the other are identical with embodiment 1.
Embodiment 8
As shown in Figure 9, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the section of semiconductor crystal 101 is in sector, its bottom surface 101-1 is arcwall face, its end face 101-2 is rectangle, anode 103 is located on the end face 101-2 of semiconductor crystal 101, and covers the Zone Full of end face 101-2. All the other are identical with embodiment 1.
Embodiment 9
As shown in Figure 10, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the semiconductor detector 100 that the present embodiment provides includes semiconductor crystal 101, negative electrode 102, anode the 103, first step electrode the 104, second step electrode the 105, the 3rd step electrode 106 and fourth order ladder electrode 107; Anode 103 is rounded or oval; 3rd step electrode 106 is located on the 3rd side 101-5 of semiconductor crystal 101, and fourth order ladder electrode 107 is located on the 4th side 101-6 of semiconductor crystal 101, and the position of the 3rd side 101-5 and the four side 101-6 is relative; 3rd step electrode 106 includes the multiple rectangular sub-electrode being located on the 3rd side 101-5 equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes;Fourth order ladder electrode 107 includes the multiple sub-electrodes being located on the 4th side 101-6 equably, 3rd step electrode 106 is identical with the number of the sub-electrode of fourth order ladder electrode 107 and the sub-electrode of the first step electrode 104 and shape, and the sub-electrode of the 3rd step electrode 106 is relative one by one with the position of the sub-electrode of fourth order ladder electrode 107; The sub-electrode that first step electrode the 104, second step electrode the 105, the 3rd step electrode 106 is identical with the height of fourth order ladder electrode 107 is connected with each other circlewise. The width of each sub-electrode of the first step electrode 104 can be different. The width of each sub-electrode of the second step electrode 105 can be different. The width of each sub-electrode of the 3rd step electrode 106 can be different. The width of each sub-electrode of fourth order ladder electrode 107 can be different. Preferably, the width of each sub-electrode of the first step electrode 104 is identical. The width of each sub-electrode of the second step electrode 105 is identical. The width of each sub-electrode of the 3rd step electrode 106 is identical. The width of each sub-electrode of fourth order ladder electrode 107 is identical. It is highly preferred that first step electrode the 104, second step electrode the 105, the 3rd step electrode 106 is all identical with the width of all of sub-electrode of fourth order ladder electrode 107. All the other are identical with embodiment 1.
Embodiment 10
As shown in figure 11, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 1: the semiconductor detector 100 that the present embodiment provides includes semiconductor crystal 101, negative electrode 102, anode 103 and the first step electrode 104; Semiconductor crystal 101 is in cylindrical, and anode 103 is rounded or oval, and anode 103 covers the subregion at end face 101-2 center; First step electrode 104 is located on the first side 101-3 of semiconductor crystal 101; First step electrode 104 includes the sub-electrode of the multiple annulars being located on the first side 101-3 equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes. Preferably, the sub-electrode of the first step electrode 104 and the end face 101-2 of semiconductor crystal 101 are parallel. The width of each sub-electrode of the first step electrode 104 can be different. Preferably, the width of each sub-electrode of the first step electrode 104 is identical. All the other are identical with embodiment 1.
It should be noted that except the present embodiment, in other preferred embodiment, semiconductor crystal 101 can be semicolumn bodily form (not shown).
It should be noted that except the present embodiment, in other preferred embodiment, anode 103 can cover the Zone Full (not shown) of end face 101-2.
It should be noted that, except the present embodiment, in other preferred embodiment, semiconductor detector 100 can include the first step electrode 104 and the second step electrode 105, and the first step electrode 104 and the second step electrode 105 all include the sub-electrode (not shown) of multiple semi-circular shape. Preferably, the first step electrode 104 is relative one by one with the position of the sub-electrode of the second step electrode 105, and two sub-electrodes that its camber is equal constitute an annulus, and these two highly equal sub-electrodes are provided with breach in its junction.
Embodiment 11
As shown in figure 12, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 9: anode 103 is rectangle, and anode 103 covers the Zone Full of end face 101-2 of semiconductor crystal 101. All the other are identical with embodiment 9.
Embodiment 12
As shown in figure 13, the semiconductor detector 100 that the present embodiment provides is distinguished as with embodiment 9: anode 103 is rectangle, and anode 103 covers the Zone Full of end face 101-2 of semiconductor crystal 101; The sub-electrode that the height of first step electrode the 104, second step electrode the 105, the 3rd step electrode 106 and fourth order ladder electrode 107 is equal is separated from each other, and the sub-electrode that the height of two step electrodes being namely located on the side that any two of semiconductor crystal 101 is adjacent is equal is provided with breach in the junction of these two sides. The width of each sub-electrode of the first step electrode 104 can be different. The width of each sub-electrode of the second step electrode 105 can be different. The width of each sub-electrode of the 3rd step electrode 106 can be different. The width of each sub-electrode of fourth order ladder electrode 107 can be different. Preferably, the width of each sub-electrode of the first step electrode 104 is identical. The width of each sub-electrode of the second step electrode 105 is identical. The width of each sub-electrode of the 3rd step electrode 106 is identical. The width of each sub-electrode of fourth order ladder electrode 107 is identical. It is highly preferred that first step electrode the 104, second step electrode the 105, the 3rd step electrode 106 is all identical with the width of all of sub-electrode of fourth order ladder electrode 107. All the other are identical with embodiment 9.
Embodiment of above is merely to illustrate the present invention; and it is not limitation of the present invention; those of ordinary skill about technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes fall within scope of the invention, and the scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. a semiconductor detector, it is characterised in that this semiconductor detector includes semiconductor crystal, negative electrode, anode and at least one step electrode;
Described semiconductor crystal includes end face, bottom surface and at least one side; Described negative electrode, described anode and described step electrode are all the conductive film being deposited on described semiconductor die surface;
Described negative electrode is located on the described bottom surface of described semiconductor crystal, and described anode is located on the described end face of described semiconductor crystal, and described step electrode is located at least one side of described semiconductor crystal;
Described step electrode includes multiple sub-electrode;
The section of described semiconductor crystal is in sector, and described bottom surface is arcwall face, and described end face is rectangle, and described anode is located on described end face and covers the Zone Full of described end face.
2. semiconductor detector as claimed in claim 1, it is characterised in that described semiconductor detector includes the first step electrode and the second step electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side.
3. semiconductor detector as claimed in claim 2, it is characterised in that described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes; Described second ladder electrode package draws together the multiple sub-electrodes being located at equably on described second side, the sub-electrode of described second step electrode is identical with the number of the sub-electrode of described first step electrode and shape, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode.
4. semiconductor detector as claimed in claim 1, it is characterised in that described anode is rounded or oval and covers the subregion in centre position of described end face;Described negative electrode covers the Zone Full of described bottom surface; Described semiconductor detector includes the first step electrode, the second step electrode, the 3rd step electrode and fourth order ladder electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side, and described 3rd step electrode is respectively arranged on fourth order ladder electrode on the 3rd relative side of the position of described semiconductor crystal and the 4th side.
5. semiconductor detector as claimed in claim 4, it is characterised in that described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode, the sub-electrode that described first step electrode, described second step electrode, described 3rd step electrode are identical with the height of described fourth order ladder electrode is connected with each other circlewise.
6. semiconductor detector as claimed in claim 1, it is characterised in that described anode is rectangle and covers the Zone Full of described end face; Described negative electrode covers the Zone Full of described bottom surface; Described semiconductor detector includes the first step electrode, the second step electrode, the 3rd step electrode and fourth order ladder electrode; Described first step electrode and the second step electrode are respectively arranged on the first relative side of the position of described semiconductor crystal and the second side, and described 3rd step electrode is respectively arranged on fourth order ladder electrode on the 3rd relative side of the position of described semiconductor crystal and the 4th side.
7. semiconductor detector as claimed in claim 6, it is characterised in that described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes, described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode, the sub-electrode that described first step electrode, described second step electrode, described 3rd step electrode are identical with the height of described fourth order ladder electrode is connected with each other circlewise.
8. semiconductor detector as claimed in claim 6, it is characterised in that described first step electrode includes the multiple rectangular sub-electrode being located on described first side equably, and is provided with gap between the two of its arbitrary neighborhood sub-electrodes;Described second step electrode, described 3rd step electrode and described fourth order ladder electrode include being located at described second side equably successively respectively, multiple sub-electrodes on described 3rd side and described 4th side, described second step electrode, described 3rd step electrode is identical with the number of the sub-electrode of described first step electrode and shape with the sub-electrode of described fourth order ladder, and the sub-electrode of described second step electrode is relative one by one with the position of the sub-electrode of described first step electrode, the sub-electrode of described 3rd step electrode is relative one by one with the position of the sub-electrode of described fourth order ladder electrode, the sub-electrode that the height of two the described step electrodes being located on the described side that any two of described semiconductor crystal is adjacent is equal is provided with breach in the junction of these two described sides.
9. the semiconductor detector as according to any one of claim 1-8, it is characterised in that the material of described semiconductor crystal includes HgI2, GaAs, TiBr, CdTe, CdZnTe, CdSe, GaP, HgS, PbI2 or AlSb.
10. the semiconductor detector as according to any one of claim 1-8, it is characterised in that the material of described negative electrode, described anode and described step electrode includes Au, Pt, Ag, Cu, Al or ITO.
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