CN105671635A - Sapphire crystal capable of absorbing blue light and application of sapphire crystal - Google Patents
Sapphire crystal capable of absorbing blue light and application of sapphire crystal Download PDFInfo
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- CN105671635A CN105671635A CN201610074181.1A CN201610074181A CN105671635A CN 105671635 A CN105671635 A CN 105671635A CN 201610074181 A CN201610074181 A CN 201610074181A CN 105671635 A CN105671635 A CN 105671635A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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Abstract
The invention relates to a sapphire crystal capable of absorbing blue light and an application of the sapphire crystal. Chemical components of the sapphire crystal comprise aluminum oxide and doped transition metal ions, wherein the transition metal ions are selected from one or more of Cr<3+>, Ni<2+> and V<3+>. The sapphire crystal can be prepared with a similar preparation process of conventional sapphire crystals; the prepared sapphire crystal can be used for preparation of screens of a smartwatch, a mobile phone and the like. Compared with the prior art, the sapphire crystal can effectively absorb blue light, and the preparation process is simple; when the prepared sapphire crystal is used for preparing the screens of the smartwatch, the mobile phone and the like, the sapphire crystal screens can absorb blue light, and the purpose of human eye protection is achieved.
Description
Technical field
The present invention relates to a kind of crystalline material, especially relate to a kind of sapphire crystal absorbing blue light and application thereof.
Background technology
The light of nature can be divided into according to the difference of wavelength: red, orange, yellow, green, cyan, blueness and seven kinds of colors of purple, the wavelength of the visible ray that human eye can be experienced is within the scope of 380-740nm, corresponding to the HONGGUANG of the blue light of 400-500nm, the gold-tinted of 500-600nm and 600-700nm. In recent years, the LED light source of appearance and all kinds of with LED be backlight computer, mobile phone, telescreen etc., the spectrum peak of its light source is blue light. Owing to blue light wavelength is short, energy is high, and penetration power is strong, it is possible to be directed through the through eye ground of crystal; And the time that people contact these electronic products is also more and more longer, therefore about blue light, the harm of human eye is of increased attention. Research shows, although blue light is unlikely to retina is damaged, but the too high levels of Long Term Contact blue light, asthenopia can be caused to rise, increase is brought out xerophthalmia, macular diseases and cataractous probability, also can the physiogenesis of eye be impacted.
The hardness of sapphire crystal is only second to diamond, has the comprehensive physical and chemical performance such as excellent optics, mechanics and calorifics. Current sapphire crystal has been supplied in smart mobile phone photographic head, fingerprint sensor, intelligent watch screen, part high-end smartphones screen etc. Compared with traditional glass screen, sapphire crystal screen has wear-resistant, scratch resistance, shatter-resistant, is not easily infected with the advantage such as fingerprint, highly sensitive, acid and alkali-resistance. The chemical constituent of sapphire crystal is Al2O3, at the light transmission rate of 3-5 mu m waveband more than 85%, therefore adopt common sapphire crystal as screen, to blue light without Absorption, it is impossible to eliminate the harm that human eye is caused by the blue light of LED light source.
Summary of the invention
Defect that the purpose of the present invention is contemplated to overcome above-mentioned prior art to exist and a kind of sapphire crystal absorbing blue light and application thereof are provided.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of sapphire crystal absorbing blue light, its chemical constituent includes aluminium oxide and the transition metal ions of doping, and described transition metal ions is selected from Cr3+、Ni2+Or V3+In one or more.
Described transition metal ions Cr3+By transition metal oxide Cr2O3There is provided, transition metal oxide Cr2O3Incorporation in sapphire crystal is 0.1-3wt%.
Described transition metal ions Ni2+Being thered is provided by transition metal oxide NiO, transition metal oxide NiO incorporation in sapphire crystal is 0.5-3wt%.
Described transition metal ions V3+By transition metal oxide V2O5There is provided, transition metal oxide V2O5Incorporation in sapphire crystal is 0.01-1wt%.
The sapphire crystal that can absorb blue light is used for preparing screen, particularly the screen of intelligent watch or mobile phone etc.
The present invention can provide Cr by mixing in the conventional aluminium oxide preparing sapphire crystal3+、Ni2+Or V3+Transition metal oxide, then adopt the preparation method similar with conventional sapphire crystal, the sapphire crystal that can absorb blue light can be prepared. Wherein, in the ion adulterated, Cr3+、Ni2+、V3+Ionic radius respectivelyWith Al3+Ionic radiusClose, Cr3+、Ni2+、V3+Ion is prone to replace Al3+Ion enters lattice. Sapphire crystal, in the unglazed absorption of 400-500nm blue wave band, mixes Cr3+、Ni2+, or V3+After ion, Cr3+Ion4A2→4F1Energy level transition produces the absorption band of 300-470nm, Ni2+Ion3A2g→3T1gEnergy level transition produces the absorption band of 360-600nm, V3+Ion3T1→3T2Energy level transition produces the absorption band of 360-500nm.
Compared with prior art; containing transition metal oxide of the present invention; the sapphire crystal prepared has the characteristic that can absorb blue light; other comprehensive physical and chemical performance of crystal is similar to conventional sapphire crystal; can be applicable to intelligent watch or mobile phone screen etc.; thus realizing the absorption to blue light of the sapphire crystal screen, reach the purpose of protection human eye.
Accompanying drawing explanation
Fig. 1 is the abosrption spectrogram of the sapphire crystal that the embodiment of the present invention 1 prepares;
Fig. 2 is the abosrption spectrogram of the sapphire crystal that the embodiment of the present invention 2 prepares.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
In following example unless otherwise noted, namely show to adopt the preparation technology identical with conventional sapphire crystal.
Embodiment 1
With high purity aluminium oxide (99.999%) powder body and the high-purity Cr of doping 1wt%2O3(99.99%) powder body is as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, make polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in kyropoulos tungsten crucible, a direction sapphire seed crystal loads in seed holder, is evacuated to 5 × 10-3Pa, to avoid thermal field oxidized, persistently overheating to 2100 DEG C until raw material is completely melt, cool the temperature to after overheated material constant temperature 8-10h near fusing point 2050 DEG C, it is gradually reduced seed crystal, roasting seed crystal 20-30 minute when seed crystal lower end is positioned at ullage 15-20mm place. Successively experience sow, necking down, seeding, shouldering, the de-crucible of isometrical, crystal, the growth course such as annealing cooling, crystal growth rate is 0.1mm/h, cool down time 7 days. The sapphire crystal that growth is obtained carries out absorption spectrum test, and result is as it is shown in figure 1, main absorption band is positioned at 300-470nm, and main absworption peak wavelength is 410nm. This crystal is applied to intelligent watch or mobile phone screen, it is possible to absorb the blue light that LED light source produces, reduces the blue light injury to human eye.
Embodiment 2
Using high purity aluminium oxide (99.999%) powder body and doping 1wt% high-purity N iO (99.99%) powder body as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinter 12h at air atmosphere 1500 DEG C, make polycrystalline ceramics raw material.Being loaded bottom heat-exchanging method tungsten crucible by a direction sapphire seed crystal, polycrystalline ceramics raw material is inserted in tungsten crucible, and high-purity argon gas atmosphere is persistently overheating to 2050 DEG C until raw material is completely melt. Increase the helium gas flow of seed rod with the speed of 5slm/h, make crystal along the bottom-up beginning crystalline growth of seed crystal. Crystal growth terminate after with the rate reduction helium gas flow of 10slm/h, slowly reduce power simultaneously, cooling down is to room temperature. The sapphire crystal that growth is obtained carries out absorption spectrum test, and result is as in figure 2 it is shown, absorption band is positioned at 360-600nm, and absworption peak wavelength is 401nm.
Embodiment 3
With high purity aluminium oxide (99.999%) powder body and the high-purity V of doping 0.4wt%2O5(99.99%) powder body is as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, make polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2100 DEG C until raw material is completely melt. Seeding temperature of sowing is 2070 DEG C, and shouldering growth period speed is gradually increased to 30mm/h from 6mm/h, and isometrical stage crystal growth rate is 30mm/h, after crystal growth terminates, is cooled to room temperature in 5h, namely obtains purpose product.
Embodiment 4
With high purity aluminium oxide (99.999%) powder body, the high-purity V of doping 0.2wt%2O5(99.99%) powder body and doping 0.6wt% high-purity N iO (99.99%) powder body are as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, makes polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2100 DEG C until raw material is completely melt. Seeding temperature of sowing is 2070 DEG C, and shouldering growth period speed is gradually increased to 28mm/h from 6mm/h, and isometrical stage crystal growth rate is 28mm/h, after crystal growth terminates, is cooled to room temperature in 5h, namely obtains purpose product.
Embodiment 5
With high purity aluminium oxide (99.999%) powder body, the high-purity Cr of doping 1.2wt%2O3(99.99%) powder body and doping 0.3wt% high-purity N iO (99.99%) powder body are as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, makes polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2100 DEG C until raw material is completely melt. Seeding temperature of sowing is 2070 DEG C, and shouldering growth period speed is gradually increased to 28mm/h from 6mm/h, and isometrical stage crystal growth rate is 28mm/h, after crystal growth terminates, is cooled to room temperature in 5h, namely obtains purpose product.
Embodiment 6
With high purity aluminium oxide (99.999%) powder body, the high-purity Cr of doping 2wt%2O3(99.99%) powder body and the high-purity V of doping 0.06wt%2O5(99.99%) powder body is as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, make polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2100 DEG C until raw material is completely melt.Seeding temperature of sowing is 2070 DEG C, and shouldering growth period speed is gradually increased to 28mm/h from 6mm/h, and isometrical stage crystal growth rate is 28mm/h, after crystal growth terminates, is cooled to room temperature in 5h, namely obtains purpose product.
Embodiment 7
With high purity aluminium oxide (99.999%) powder body and the high-purity Cr of doping 0.1wt%2O3(99.99%) powder body is as raw material, by all raw materials 100r/min rotating speed mixed grinding 12h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, make polycrystalline ceramics raw material at air atmosphere 1600 DEG C. Being inserted by polycrystalline ceramics raw material in kyropoulos tungsten crucible, a direction sapphire seed crystal loads in seed holder, is evacuated to 5 × 10-3Pa, to avoid thermal field oxidized, persistently overheating to 2100 DEG C until raw material is completely melt, cool the temperature near fusing point 2050 DEG C after overheated material constant temperature 8h, be gradually reduced seed crystal, roasting seed crystal 20 minutes when seed crystal lower end is positioned at ullage 15mm place. Successively experience sow, necking down, seeding, shouldering, the de-crucible of isometrical, crystal, the growth course such as annealing cooling, crystal growth rate is 0.15mm/h, and cool down time is 6 days.
Embodiment 8
With high purity aluminium oxide (99.999%) powder body and the high-purity Cr of doping 3wt%2O3(99.99%) powder body is as raw material, by all raw materials 100r/min rotating speed mixed grinding 12h on planetary ball mill, cold isostatic compaction after taking-up, sinters 24h, make polycrystalline ceramics raw material at air atmosphere 1400 DEG C. Being inserted by polycrystalline ceramics raw material in kyropoulos tungsten crucible, a direction sapphire seed crystal loads in seed holder, is evacuated to 5 × 10-3Pa, to avoid thermal field oxidized, persistently overheating to 2150 DEG C until raw material is completely melt, cool the temperature near fusing point 2050 DEG C after overheated material constant temperature 10h, be gradually reduced seed crystal, roasting seed crystal 30 minutes when seed crystal lower end is positioned at ullage 20mm place. Successively experience sow, necking down, seeding, shouldering, the de-crucible of isometrical, crystal, the growth course such as annealing cooling, crystal growth rate is 0.05mm/h, and cool down time is 7 days.
Embodiment 9
Using high purity aluminium oxide (99.999%) powder body and doping 3wt% high-purity N iO (99.99%) powder body as raw material, by all raw materials 98r/min rotating speed mixed grinding 18h on planetary ball mill, cold isostatic compaction after taking-up, sinter 20h at air atmosphere 1500 DEG C, make polycrystalline ceramics raw material. Being inserted by polycrystalline ceramics raw material in kyropoulos tungsten crucible, a direction sapphire seed crystal loads in seed holder, is evacuated to 5 × 10-3Pa, to avoid thermal field oxidized, persistently overheating to 2125 DEG C until raw material is completely melt, cool the temperature near fusing point 2050 DEG C after overheated material constant temperature 9h, be gradually reduced seed crystal, roasting seed crystal 25 minutes when seed crystal lower end is positioned at ullage 18mm place. Successively experience sow, necking down, seeding, shouldering, the de-crucible of isometrical, crystal, the growth course such as annealing cooling, crystal growth rate is 0.12mm/h, and cool down time is 7 days.
Embodiment 10
Using high purity aluminium oxide (99.999%) powder body and doping 0.5wt% high-purity N iO (99.99%) powder body as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinter 12h at air atmosphere 1500 DEG C, make polycrystalline ceramics raw material. A direction sapphire seed crystal being loaded heat-exchanging method tungsten crucible bottom centre, and makes heat exchanger tip contact crucible bottom center, polycrystalline ceramics raw material is inserted in tungsten crucible, and high-purity argon gas atmosphere is persistently overheating to 2070 DEG C until raw material is completely melt.Increase the helium gas flow of seed rod with the speed of 4slm/h, make crystal along the bottom-up beginning crystalline growth of seed crystal. Crystal growth terminate after with the rate reduction helium gas flow of 8slm/h, slowly reduce power simultaneously, cooling down, to room temperature, namely obtains absorbing the sapphire crystal of blue light.
Embodiment 11
Using high purity aluminium oxide (99.999%) powder body and doping 1.5wt% high-purity N iO (99.99%) powder body as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinter 12h at air atmosphere 1500 DEG C, make polycrystalline ceramics raw material. A direction sapphire seed crystal being loaded heat-exchanging method tungsten crucible bottom centre, and makes heat exchanger tip contact crucible bottom center, polycrystalline ceramics raw material is inserted in tungsten crucible, and high-purity argon gas atmosphere is persistently overheating to 2070 DEG C until raw material is completely melt. Increase the helium gas flow of seed rod with the speed of 6slm/h, make crystal along the bottom-up beginning crystalline growth of seed crystal. Crystal growth terminate after with the rate reduction helium gas flow of 12slm/h, slowly reduce power simultaneously, cooling down, to room temperature, namely obtains absorbing the sapphire crystal of blue light.
Embodiment 12
With high purity aluminium oxide (99.999%) powder body, the high-purity V of doping 0.01wt%2O5(99.99%) powder body and doping 0.6wt% high-purity N iO (99.99%) powder body are as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, makes polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2080 DEG C until raw material is completely melt. Seeding temperature of sowing is 2100 DEG C, and shouldering growth period speed is gradually increased to 30mm/h from 6mm/h, and isometrical stage crystal growth rate is 30mm/h, after crystal growth terminates, is cooled to room temperature in 4h.
Embodiment 13
With high purity aluminium oxide (99.999%) powder body, the high-purity V of doping 1wt%2O5(99.99%) powder body is as raw material, by all raw materials 95r/min rotating speed mixed grinding 24h on planetary ball mill, cold isostatic compaction after taking-up, sinters 12h, make polycrystalline ceramics raw material at air atmosphere 1500 DEG C. Being inserted by polycrystalline ceramics raw material in EFG technique molybdenum crucible, loaded in seed holder by a direction sapphire seed crystal, high-purity argon atmosphere is persistently overheating to 2120 DEG C until raw material is completely melt. Seeding temperature of sowing is 2080 DEG C, and shouldering growth period speed is gradually increased to 25mm/h from 6mm/h, and isometrical stage crystal growth rate is 25mm/h, after crystal growth terminates, is cooled to room temperature in 4h.
The above-mentioned description to embodiment is to be understood that for ease of those skilled in the art and use invention. These embodiments obviously easily can be made various amendment by person skilled in the art, and General Principle described herein is applied in other embodiments without through performing creative labour. Therefore, the invention is not restricted to above-described embodiment, those skilled in the art's announcement according to the present invention, the improvement made without departing from scope and amendment all should within protection scope of the present invention.
Claims (5)
1. the sapphire crystal that can absorb blue light, it is characterised in that its chemical constituent includes aluminium oxide and the transition metal ions of doping, and described transition metal ions is selected from Cr3+、Ni2+Or V3+In one or more.
2. a kind of sapphire crystal absorbing blue light according to claim 1, it is characterised in that described transition metal ions Cr3+By transition metal oxide Cr2O3There is provided, transition metal oxide Cr2O3Incorporation in sapphire crystal is 0.1-3wt%.
3. a kind of sapphire crystal absorbing blue light according to claim 1, it is characterised in that described transition metal ions Ni2+Being thered is provided by transition metal oxide NiO, transition metal oxide NiO incorporation in sapphire crystal is 0.5-3wt%.
4. a kind of sapphire crystal absorbing blue light according to claim 1, it is characterised in that described transition metal ions V3+By transition metal oxide V2O5There is provided, transition metal oxide V2O5Incorporation in sapphire crystal is 0.01-1wt%.
5. the sapphire crystal of the absorbed blue light as described in as arbitrary in Claims 1 to 4 is used for preparing screen.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107937983A (en) * | 2018-01-04 | 2018-04-20 | 河北工业大学 | A kind of sapphire material of multicomponent doping and its preparation method and application |
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| CN102066624A (en) * | 2008-06-12 | 2011-05-18 | 韩国原子力研究院 | Method for manufacturing the color controlled sappire |
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| CN102066624A (en) * | 2008-06-12 | 2011-05-18 | 韩国原子力研究院 | Method for manufacturing the color controlled sappire |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107937983A (en) * | 2018-01-04 | 2018-04-20 | 河北工业大学 | A kind of sapphire material of multicomponent doping and its preparation method and application |
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