CN105671506A - Preparing method for copper-modified N-doped titanium dioxide film - Google Patents

Preparing method for copper-modified N-doped titanium dioxide film Download PDF

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CN105671506A
CN105671506A CN201610151195.9A CN201610151195A CN105671506A CN 105671506 A CN105671506 A CN 105671506A CN 201610151195 A CN201610151195 A CN 201610151195A CN 105671506 A CN105671506 A CN 105671506A
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sputtering
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thin film
nitrogen
copper
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CN105671506B (en
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方峰
张夜雨
陈海洋
张旭海
周雪峰
蒋建清
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Southeast University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
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Abstract

The invention discloses a preparing method for a copper-modified N-doped titanium dioxide film. The preparing method includes the steps that firstly, magnetron pre-sputtering is conducted, wherein a magnetron sputtering method and a double-target co-sputtering technology are adopted, in an Ar gas vacuum environment, a Ti target and a Cu target are adopted for conducting pre-sputtering on a clean substrate material, and the angle of the Cu target and the Ti target ranges from 60 degrees to 90 degrees; secondly, magnetron sputtering is conducted, wherein after pre-sputtering is conducted, mixed gas of oxygen and nitrogen is led in, under the vacuum condition, the sputtering power of the Ti target is controlled to range from 150 W to 250 W, the sputtering power of the Cu target is controlled to range from 20 W to 50 W, the sputtering pressure is controlled to range from 0.4 Pa to 0.8 Pa after build-up of luminance, and magnetron sputtering begins; thirdly, the film is deposited; and fourthly, annealing is conducted after the film is deposited, wherein annealing is conducted in the mixed atmosphere of oxygen and nitrogen. The doping amount of metal can be accurately controlled, and the light absorbing range of the film can be obviously enlarged.

Description

The preparation method that a kind of copper modifies nitrogen-doped titanium dioxide thin film
Technical field
The present invention relates to the preparation of titanium deoxid film, particularly to the preparation method that a kind of copper (Cu) modifies nitrogen (N) titania-doped thin film.
Background technology
With titanium dioxide (TiO2) for the catalysis material of representative, the electron-hole pair produced that is excited under light illumination has significantly high redox ability, in photocatalysis degradation organic contaminant, owing to having, energy consumption is low, reaction condition is gentle, can reduce the advantages such as secondary pollution, obtains the extensive concern of people. But TiO2There is major defect in the application: due to its greater band gap, only the ultraviolet region that wavelength is shorter is produced response, i.e. be only capable of utilizing the solar energy of about 5%. How to improve TiO2The utilization of visible ray has been become current TiO2One of most important research topic of photocatalysis field.
In order to realize TiO2The methods such as available solar energy carries out photocatalysis treatment, it is necessary to it is modified, noble metal decorated, metal-doped, the nonmetal doping of main employing. Noble metal mainly includes the precious metal elements such as Pt, Ag, Pd, and it is relatively costly; Nonmetal doping mainly includes the elements such as C, N, F. Transition metal wide material sources, non-toxic inexpensive, but adopt magnetron sputtering method to prepare transient metal doped titanium deoxid film at present, what generally adopt is spell target technique, namely on Ti target, place sheet metal, control metal-doped content by controlling the area of sheet metal. Thin film prepared by this kind of method is difficult to be precisely controlled the doping of metal, and thin film is uneven. Research in the past shows, the transition metal amount of doping need to control within 1.5at.%, and the visible light catalysis activity of thin film could play beneficial effect, and too high doping can reduce its activity on the contrary.
Summary of the invention
The invention discloses the preparation method that a kind of copper modifies nitrogen-doped titanium dioxide thin film, can relatively be precisely controlled metal-doped amount, and significantly widen the light abstraction width of thin film.
The invention discloses the preparation method that a kind of copper modifies nitrogen-doped titanium dioxide thin film, step is:
The first step, magnetic control pre-sputtering: adopt magnetron sputtering method and double target co-sputtering technique, under Ar gas vacuum environment, on clean backing material, adopt Ti and Cu target to carry out pre-sputtering;Be adjusted to Cu target respectively, the angle of Ti target is 60 °～90 °;
Second step, magnetron sputtering: after pre-sputtering, pass into the mixing gas of oxygen and nitrogen, under vacuum, control Ti target sputtering power is 150W～250W, Cu target sputtering power is 20～50W, and controlling sputtering pressure after build-up of luminance is 0.4～0.8Pa, starts magnetron sputtering;
3rd step, deposits thin film: make substrate rotation, controls rotational velocity, controllable register and substrate location, begins at deposited on substrates thin film;
4th step, thin film deposition after annealing: anneal in the mixed atmosphere of oxygen and nitrogen.
Described backing material is glass.
When pre-sputtering and magnetron sputtering, Ti target connects pulse dc power, and Cu target connects radio-frequency power supply.
During magnetron sputtering, oxygen and nitrogen 10～20:90～80 by volume mix.
Pre-sputtering and magnetron sputtering are when starting, and sputtering chamber internal gas pressure is 3～5Pa.
During pre-sputtering, the power-sharing of Ti target and Cu target not Wei 150W～250W, after build-up of luminance, sputtering pressure is 0.4～0.8Pa.
Annealing temperature is 300～500 DEG C, atmosphere volume ratio O2:N2Under the condition of=10～20:90～80, it is incubated 20～60min.
During sputtering, underlayer temperature is 150～300 DEG C.
Autorotation speed is 20～40r/min, and the thin film deposition time controls at 50～90min.
Described copper modifies the thin film that the preparation method of nitrogen-doped titanium dioxide thin film obtains, mix copper amount 0.5～1.5At.%, itrogen content of getter with nitrogen doped 4.0～12.0At.%, have visible light-responded, optical absorption edge position 440nm～580nm.
Beneficial effect:
(1) copper that magnetron sputtering method and double target co-sputtering technique deposit on a glass substrate is adopted to modify nitrogen-doped titanium dioxide thin film, by the angle of change sputtering target and sputtering power and nitrogen oxide flow ratio, copper and nitrogen element content in thin film can be controlled more accurately. (2) reparation technology is simple and easy to control, and magnetron sputtering method is the prevailing technology method of current industrialized production thin film; (3) nitrogen element, copper wide material sources, cost is low, and product is nontoxic, environmentally safe, it is simple to large-scale production; (4) coupling of N, Cu can significantly improve TiO2To the absorption of visible ray and improve its visible light catalysis activity; The copper obtained modifies nitrogen-doped titanium dioxide thin film, it is seen that photoresponse scope is widened to 440nm～580nm from 375nm.
Accompanying drawing explanation
The uv-visible absorption spectroscopy of Fig. 1 copper nitrogen co-doped titanium dioxide thin film.
Detailed description of the invention
Below by specific embodiment, the present invention is described.
A kind of copper modifies nitrogen-doped titanium dioxide thin film, including following step:
A. clean backing material, load sample stage after drying up with nitrogen, be arranged in magnetic control sputtering device Sample Room;
B. installing Ti target (purity >=99.99%) and Cu target (purity >=99.99%), adjust the angle 60 °～90 ° of Cu target and Ti target respectively, Ti target connects pulse dc power, and Cu target connects radio-frequency power supply.
C. Sample Room and sputtering chamber are evacuated to 6 × 10-4Below Pa, sample is sent into vacuum chamber from Sample Room, pass into Ar, control air pressure at 3～5Pa, open pulse dc power and radio-frequency power supply, controlling Ti target sputtering power is 150W～250W, Cu target sputtering power is 150W～250W, and after build-up of luminance, control sputtering pressure is 0.4～0.8Pa, target is carried out the pre-sputtering of 10～20min, and to regulate substrate heating temperature be 150～300 DEG C;
D., after pre-sputtering, direct current pulse power source and radio-frequency power supply, (O according to a certain volume are closed2:N2=(10～20): (90～80)) pass into O2(purity >=99.99%) and N2The mixing gas of (purity >=99.99%), controlling sputtering chamber internal gas pressure is 3～5Pa, opens pulse dc power and radio-frequency power supply, and controlling Ti target sputtering power is 150W～250W, Cu target sputtering power is 20～50W, and controlling sputtering pressure after build-up of luminance is 0.4～0.8Pa;
E. opening sample stage spinning motor, adjustment autorotation speed is 20～40r/min, controllable register and sample stage position, begins at deposited on substrates thin film, and the thin film deposition time controls at 50～90min;
F. thin film deposition after annealing: at temperature 300～500 DEG C, atmosphere (O2:N2=(10～20): (90～80)) under condition, it is incubated 20～60min;
Can obtain mixing copper amount 0.5～1.5At.%, itrogen content of getter with nitrogen doped 4.0～12.0At.%, have visible light-responded (optical absorption edge position 440nm～580nm), the copper of stable performance modifies nitrogen-doped titanium dioxide thin film.
Embodiment 1
1) clean backing material, load sample stage after drying up with nitrogen, be arranged in magnetic control sputtering device Sample Room;
2) installing Ti target (purity >=99.99%) and Cu target (purity >=99.99%), the angle adjusting Cu target is 60 °, and the angle adjusting Ti target is 90 °, and Ti target connects pulse dc power, and Cu target connects radio-frequency power supply;
3) Sample Room and sputtering chamber are evacuated to 6 × 10-4Below Pa, sample is sent into vacuum chamber from Sample Room, pass into Ar, control air pressure at 3～5Pa, open pulse dc power and radio-frequency power supply, controlling Ti target sputtering power is 200W, Cu target sputtering power is 200W, and after build-up of luminance, control sputtering pressure is 0.5Pa, target is carried out the pre-sputtering of 10～20min, and to regulate substrate heating temperature be 150 DEG C;
4), after pre-sputtering, direct current pulse power source and radio-frequency power supply, (O according to a certain volume are closed2:N2=10:90) pass into O2(purity >=99.99%) and N2The mixing gas of (purity >=99.99%), controlling sputtering chamber internal gas pressure is 5Pa, opens pulse direct current source current and radio-frequency power supply, and control Ti target sputtering power is 200W, Cu target sputtering power is 50W, and controlling sputtering pressure after build-up of luminance is 0.4Pa;
5) opening sample stage spinning motor, adjustment autorotation speed is 30r/min, controllable register and sample stage position, begins at deposited on substrates thin film, and the thin film deposition time controls at 60min;
6) thin film deposition after annealing: at temperature 300 DEG C, atmosphere (O2:N2=10:90) under condition, it is incubated 60min. Can obtain mixing copper amount 1.2At.%, itrogen content of getter with nitrogen doped 12.0At.%, have visible light-responded (widening to 580nm from 375nm), the copper of stable performance modifies nitrogen-doped titanium dioxide thin film.
Embodiment 2
1) clean backing material, load sample stage after drying up with nitrogen, be arranged in magnetic control sputtering device Sample Room;
2) installing Ti target (purity >=99.99%) and Cu target (purity >=99.99%), the angle adjusting Cu target is 90 °, and the angle adjusting Ti target is 60 °, and Ti target connects pulse dc power, and Cu target connects radio-frequency power supply;
3) Sample Room and sputtering chamber are evacuated to 6 × 10-4Below Pa, sample is sent into vacuum chamber from Sample Room, pass into Ar, control air pressure at 3～5Pa, open pulse dc power and radio-frequency power supply, controlling Ti target sputtering power is 200W, Cu target sputtering power is 200W, and after build-up of luminance, control sputtering pressure is 0.5Pa, target is carried out the pre-sputtering of 10～20min, and to regulate substrate heating temperature be 200 DEG C;
4), after pre-sputtering, direct current pulse power source and radio-frequency power supply, (O according to a certain volume are closed2:N2=15:85) pass into O2(purity >=99.99%) and N2The mixing gas of (purity >=99.99%), controlling sputtering chamber internal gas pressure is 5Pa, opens pulse direct current source current and radio-frequency power supply, and control Ti target sputtering power is 250W, Cu target sputtering power is 20W, and controlling sputtering pressure after build-up of luminance is 0.8Pa;
5) opening sample stage spinning motor, adjustment autorotation speed is 30r/min, controllable register and sample stage position, begins at deposited on substrates thin film, and the thin film deposition time controls at 60min;
6) thin film deposition after annealing: at temperature 500 DEG C, atmosphere (O2:N2=15:85) under condition, it is incubated 60min.
Can obtain mixing copper amount 1.0At.%, itrogen content of getter with nitrogen doped 6.7At.%, have visible light-responded (widening to 550nm from 375nm), the copper of stable performance modifies nitrogen-doped titanium dioxide thin film.
Embodiment 3
1) clean backing material, load sample stage after drying up with nitrogen, be arranged in magnetic control sputtering device Sample Room;
2) installing Ti target (purity >=99.99%) and Cu target (purity >=99.99%), the angle adjusting Cu target is 60 °, and the angle adjusting Ti target is 90 °, and Ti target connects pulse dc power, and Cu target connects radio-frequency power supply.
3) Sample Room and sputtering chamber are evacuated to 6 × 10-4Below Pa, sample is sent into vacuum chamber from Sample Room, pass into Ar, control air pressure at 3～5Pa, open pulse dc power and radio-frequency power supply, controlling Ti target sputtering power is 200W, Cu target sputtering power is 200W, and after build-up of luminance, control sputtering pressure is 0.5Pa, target is carried out the pre-sputtering of 10～20min, and to regulate substrate heating temperature be 300 DEG C;
4), after pre-sputtering, direct current pulse power source and radio-frequency power supply, (O according to a certain volume are closed2:N2=20:80) pass into O2(purity >=99.99%) and N2The mixing gas of (purity >=99.99%), controlling sputtering chamber internal gas pressure is 5Pa, opens pulse direct current source current and radio-frequency power supply, and control Ti target sputtering power is 150W, Cu target sputtering power is 30W, and controlling sputtering pressure after build-up of luminance is 0.5Pa;
5) opening sample stage spinning motor, adjustment autorotation speed is 30r/min, controllable register and sample stage position, begins at deposited on substrates thin film, and the thin film deposition time controls at 60min;
6) thin film deposition after annealing: at temperature 500 DEG C, atmosphere (O2:N2=20:80) under condition, it is incubated 60min;
Can obtain mixing copper amount 0.7At.%, itrogen content of getter with nitrogen doped 4.7At.%, have visible light-responded (widening to 490nm from 375nm), the copper of stable performance modifies nitrogen-doped titanium dioxide thin film.
Embodiment 4
1) clean backing material, load sample stage after drying up with nitrogen, be arranged in magnetic control sputtering device Sample Room;
2) installing Ti target (purity >=99.99%) and Cu target (purity >=99.99%), the angle adjusting Cu target is 60 °, and the angle adjusting Ti target is 90 °, and Ti target connects pulse dc power, and Cu target connects radio-frequency power supply;
3) Sample Room and sputtering chamber are evacuated to 6 × 10-4Below Pa, sample is sent into vacuum chamber from Sample Room, pass into Ar, control air pressure at 3～5Pa, open pulse dc power and radio-frequency power supply, controlling Ti target sputtering power is 200W, Cu target sputtering power is 200W, and after build-up of luminance, control sputtering pressure is 0.5Pa, target is carried out the pre-sputtering of 10～20min, and to regulate substrate heating temperature be 300 DEG C;
4), after pre-sputtering, direct current pulse power source and radio-frequency power supply, (O according to a certain volume are closed2:N2=20:80) pass into O2(purity >=99.99%) and N2The mixing gas of (purity >=99.99%), controlling sputtering chamber internal gas pressure is 5Pa, opens pulse direct current source current and radio-frequency power supply, and control Ti target sputtering power is 200W, Cu target sputtering power is 20W, and controlling sputtering pressure after build-up of luminance is 0.5Pa;
5) opening sample stage spinning motor, adjustment autorotation speed is 30r/min, controllable register and sample stage position, begins at deposited on substrates thin film, and the thin film deposition time controls at 60min;
6) thin film deposition after annealing: at temperature 400 DEG C, atmosphere (O2:N2=20:80) under condition, it is incubated 60min.
Can obtain mixing copper amount 0.5At.%, itrogen content of getter with nitrogen doped 4.0At.%, have visible light-responded (widening to 440nm from 375nm), the copper of stable performance modifies nitrogen-doped titanium dioxide thin film.

Claims (10)

1. the preparation method that a copper modifies nitrogen-doped titanium dioxide thin film, it is characterised in that step is:
The first step, magnetic control pre-sputtering: adopt magnetron sputtering method and double target co-sputtering technique, under Ar gas vacuum environment, on clean backing material, adopt Ti and Cu target to carry out pre-sputtering; Adjust Cu target respectively, the angle of Ti target is 60 °～90 °;
Second step, magnetron sputtering: after pre-sputtering, pass into the mixing gas of oxygen and nitrogen, under vacuum, control Ti target sputtering power is 150W～250W, Cu target sputtering power is 20～50W, and controlling sputtering pressure after build-up of luminance is 0.4～0.8Pa, starts magnetron sputtering;
3rd step, deposits thin film: make substrate rotation, controls rotational velocity, controllable register and substrate location, begins at deposited on substrates thin film;
4th step, thin film deposition after annealing: anneal in the mixed atmosphere of oxygen and nitrogen.
2. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that described backing material is glass.
3. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that when pre-sputtering and magnetron sputtering, Ti target connects pulse dc power, and Cu target connects radio-frequency power supply.
4. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that during magnetron sputtering, oxygen and nitrogen 10～20:90～80 by volume mix.
5. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that pre-sputtering and magnetron sputtering are when starting, and sputtering chamber internal gas pressure is 3～5Pa.
6. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that during pre-sputtering, the power-sharing of Ti target and Cu target not Wei 150W～250W, after build-up of luminance, sputtering pressure is 0.4～0.8Pa.
7. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that annealing temperature is 300～500 DEG C, atmosphere volume ratio O2:N2Under the condition of=10～20:90～80, it is incubated 20～60min.
8. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that during sputtering, underlayer temperature is 150～300 DEG C.
9. the preparation method that copper as claimed in claim 1 modifies nitrogen-doped titanium dioxide thin film, it is characterised in that autorotation speed is 20～40r/min, and the thin film deposition time controls at 50～90min.
10. the arbitrary described copper of claim 1～9 modifies the thin film that the preparation method of nitrogen-doped titanium dioxide thin film obtains, it is characterized in that, mix copper amount 0.5～1.5At.%, itrogen content of getter with nitrogen doped 4.0～12.0At.%, have visible light-responded, optical absorption edge position 440nm～580nm.
CN201610151195.9A 2016-03-16 2016-03-16 A kind of preparation method of copper modification nitrogen-doped titanium dioxide film Active CN105671506B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109574333A (en) * 2018-12-06 2019-04-05 东南大学 A kind of copper modification nitrogen-doped titanium dioxide material and its preparation method and application
CN115404445A (en) * 2022-10-10 2022-11-29 沈阳大学 Corrosion-resistant antibacterial TiO 2 Preparation method of/Cu-Ni nano composite film

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Publication number Priority date Publication date Assignee Title
CN101209413A (en) * 2006-12-31 2008-07-02 明道管理学院 Titanium dioxide photo-catalytic and manufacturing method thereof

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
CN101209413A (en) * 2006-12-31 2008-07-02 明道管理学院 Titanium dioxide photo-catalytic and manufacturing method thereof

Non-Patent Citations (1)

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Title
张晓勇等: "钒掺杂纳米TiO2薄膜的结构和光吸收性能", 《无机材料学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109574333A (en) * 2018-12-06 2019-04-05 东南大学 A kind of copper modification nitrogen-doped titanium dioxide material and its preparation method and application
CN115404445A (en) * 2022-10-10 2022-11-29 沈阳大学 Corrosion-resistant antibacterial TiO 2 Preparation method of/Cu-Ni nano composite film

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