CN105659363A - Determination of gain for eddy current sensor - Google Patents

Determination of gain for eddy current sensor Download PDF

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Publication number
CN105659363A
CN105659363A CN201480057958.2A CN201480057958A CN105659363A CN 105659363 A CN105659363 A CN 105659363A CN 201480057958 A CN201480057958 A CN 201480057958A CN 105659363 A CN105659363 A CN 105659363A
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China
Prior art keywords
polishing
substrate
signal
gain
eddy current
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CN201480057958.2A
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CN105659363B (en
Inventor
K·徐
S－H·沈
B·A·斯伟德克
I·卡尔松
D·E·本内特
W-C·图
H·G·伊拉瓦尼
T-Y·刘
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US14/066,509 external-priority patent/US9275917B2/en
Priority claimed from US14/066,571 external-priority patent/US9281253B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Abstract

In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.

Description

The determination of eddy current sensor gain
Technical field
The disclosure about chemically machinery polished, and more specially about during chemically machinery polished to the monitoring of conductive layer.
Background technology
Unicircuit is formed on substrate by the deposition of conduction, semiconduction or insulation layer order on silicon usually. Various manufacturing process needs the planarization to the layer on substrate. Such as, a manufacturing step relates to and deposits packing layer on nonplanar surface, and makes packing layer planarization. For some application, packing layer through planarization, till exposing the top surface of patterned layer. Such as, metal level can be deposited on patterned insulation layer with the groove filled in this insulation layer and hole. After planarization, the rest part of the metal in the groove of patterned layer and hole forms through hole, connector and line, provides conductive path between these through holes, connector and the line thin film circuit on substrate.
Chemically machinery polished (Chemicalmechanicalpolishing; CMP) it is a kind of flattening method accepted. This flattening method needs to be assemblied on carrier head substrate usually. The surface that is exposed of substrate is placed as usually against rotary polishing pad. Carrier head provides controlled load to promote this substrate against polishing pad on substrate. Usually the polishing slurries with abrasive particle is supplied to the surface of polishing pad.
A problem in CMP judges whether glossing completes (that is, whether plaque layer being planarized to required Pingdu or thickness, when removed the material of institute's requirement). The variation of the load on speed of relative movement between paste composition, polishing pad condition, polishing pad and substrate, the original depth of plaque layer and substrate can cause the variation of material removal rate. These variations cause the variation arriving the time needed for polishing end point. Therefore, only determine that polishing end point can cause the ununiformity in wafer or between wafer and wafer according to polishing time.
Such as, in some systems, (pass through polishing pad) during polishing (in-situ) monitoring substrate in situ. A kind of Monitoring techniques is for bringing out eddy current in the conductive layer, and detects the change of eddy current when removing conductive layer.
Summary of the invention
In one aspect, a kind of method controlling polishing comprises the following steps: before polishing first substrate, receives from the measurement to the conducting film original depth on first substrate of straight formula or unit Monitoring systems; One or more substrate of polishing in polishing system, described one or more substrate comprises first substrate; During one or more substrate described in polishing, utilize eddy current Monitoring systems monitoring one or more substrate described to generate the first signal; Determine the initial value initial, the first signal of the polishing of first substrate; At least part of for the first signal collected during at least one substrate in one or more substrate described in polishing, determines gain based on initial value and to the measurement of original depth; Second signal is calculated based on the first signal and gain; And be that at least one substrate in described substrate determines polishing end point or at least one in the adjustment of burnishing parameters based on second signal.
Implementation can comprise the one in following feature or more person.
The step calculating second signal can comprise the following steps: is multiplied by gain.
Calculate second signal can comprise the following steps: calculating V'=V*G+K, wherein V' is second signal, and V is the first signal, and G is gain, and K is skew.
At least one substrate in one or more substrate described can be first substrate.
At least one substrate in one or more substrate described can be second substrate through polishing after first substrate.
Polishing system can comprise rotatable platform, and the eddy current sensor of eddy current Monitoring systems is supported on platform with inswept across one or more substrate described.
The first signal can be generated from the part of the signal generated when eddy current sensor is not adjacent to substrate.
Reference value can be determined from the part of the signal generated when eddy current sensor is not adjacent to substrate.
Skew is produced, to generate the expected value for zero thickness by adjustment reference value.
Determine that the step of gain can comprise the following steps: from thickness being associated to the calibration function of strength of signal and determines expected value to the measurement of original depth.
Determine that gain can comprise the following steps: calculate multiplier N according to following equation:
N = ( D - K ) ( S - K )
Wherein, D is expected value, and S is initial value, and K is the constant representing calibration function for the value of zero thickness.
Determine that the step of gain can comprise the following steps: make old gain be multiplied by N.
Determine that the step of initial value can comprise the following steps: from the first signal, generate observed value sequence; By function matching to described observed value sequence; And initial value is calculated as the value of described function in the approximate initial moment of polishing operation.
On the other hand, computer program (described computer program encodes with tangible form in non-transitory computer-readable medium) comprises instruction, and described instruction being operable is so that data-processing equipment executable operations performs the method for any one in aforesaid method.
In another aspect, polishing system comprises: rotatable platform, for supporting polishing pad; Carrier head, for admittedly holding first substrate against polishing pad; Original position eddy current Monitoring systems, described Monitoring systems comprises sensor to generate the first signal of the conductive layer thickness depending on substrate; And controller, described controller is configured any one method in perform the above method.
In another aspect, a kind of method controlling polishing comprises the following steps: at the first polishing station place polishing substrate; When, during the first polishing station place polishing substrate, utilizing the first eddy current Monitoring systems monitoring substrate to generate the first signal; Determine substrate the polishing at the first polishing station place end, the end value of the first signal; Determine first temperature at the first polishing station place; When after the first polishing station place polishing substrate, at the 2nd polishing station place polishing substrate; When, during the 2nd polishing station place polishing substrate, utilizing the 2nd eddy current Monitoring systems monitoring substrate to generate second signal; Determine the initial value initial, second signal of the polishing of substrate at the 2nd polishing station place; At least part of in the second signal collected during the 2nd at least one substrate of polishing station place polishing, determines the gain of the 2nd polishing station based on end value, initial value and the first temperature; The 3rd signal is calculated based on second signal and gain; And be that at least one substrate determines polishing end point or at least one in the adjustment of burnishing parameters based on the 3rd signal.
Implementation can comprise the one in following feature or more person.
Determine that the step of the gain of the 2nd polishing station can be further comprising the steps: the 2nd temperature measuring the 2nd polishing station place.
Can based on just carrying out calculated gains with the resistivity of the polished layer of the first and second temperature.
[1+ �� (TE can be calculatedpost-TEini)], wherein TEpostIt is first temperature at the first polishing pad place, TEiniIt is the 2nd temperature at the 2nd polishing pad place, and �� is the resistivity factor of material of the layer through polishing.
Can determine substrate the polishing at the first polishing station place end, the end value of the first signal.
Determine that end value can comprise the following steps: from the first signal, generate the first observed value sequence; By the first function matching to described first observed value sequence; And end value is calculated as the value that described function locates in the terminal moment of the first polishing station place polishing.
Can determining the first thickness from end value and calibration function, thickness is associated to strength of signal by described calibration function.
The thickness through adjustment can be determined based on the first thickness, the first temperature and the 2nd temperature.
Determine that the step of the thickness through adjustment can comprise the following steps: make the first thickness be multiplied by [1+ �� (TEpost-TEini)], wherein TEpostIt is first temperature at the first polishing pad place, TEiniIt is the 2nd temperature at the 2nd polishing pad place, and �� is just at the resistivity factor of material of polished layer.
Expected value can be determined from adjusted value and calibration function.
The initial value initial, the first signal of the polishing of substrate at the 2nd polishing station place can be determined.
Determine that the step of initial value can comprise the following steps: from second signal, generate the 2nd observed value sequence; By the 2nd function matching to described 2nd observed value sequence; And initial value is calculated as the value of described 2nd function in the approximate initial moment of the polishing at the 2nd polishing station place.
Determine that the step of gain can comprise the following steps: calculate multiplier N according to following equation:
N = ( D - K ) ( S - K )
Wherein, D is expected value, and S is initial value, and K is the constant representing calibration function for the value of zero thickness.
First temperature can be the temperature of first polishing pad at the first polishing station place, and the 2nd temperature can be the temperature of the 2nd polishing pad at the 2nd polishing station place.
First temperature can be the first polishing station place just in the temperature of polished layer, and the 2nd temperature can be that the 2nd polishing station place is just in the temperature of polished described layer.
On the other hand, computer program (described computer program in non-transitory computer-readable medium with tangible form coding) can operate so that data-processing equipment executable operations to perform the above method in any one method.
In another aspect, polishing system comprises: the first polishing station, and described first polishing station comprises: for supporting the first platform of the first polishing pad; First original position eddy current Monitoring systems, described first original position eddy current monitoring system comprises the first sensor to generate the first signal of the thickness of the conductive layer depending on substrate; And first temperature sensor; 2nd polishing station, described 2nd polishing station comprises: for supporting the 2nd platform of the 2nd polishing pad; And the 2nd original position eddy current Monitoring systems, described first original position eddy current monitoring system comprises the 2nd sensor to generate two signals of the thickness of the conductive layer depending on substrate; For admittedly holding the carrier head of substrate; And controller, described controller is configured any one method in perform the above method.
Implementation can comprise the one in following advantage or more person.Can automatically adjust Monitoring systems gain and offset to compensate the parameter that may affect eddy current signals. Such as, such as, gain and skew can be adjusted for the change of envrionment conditions (temperature) or the such as device parameter of polishing pad thickness and so on. The reliability of the endpoint system for detecting required polishing end point can be improved, and the thickness offset in wafer can be reduced and between wafer.
Accompanying drawing and following description are illustrated the details of one or more implementation. Describing with accompanying drawing according to this and claim book, other aspects, Characteristics and advantages will be apparent.
Accompanying drawing explanation
Fig. 1 illustrates the cross sectional view of the example of polishing station, and described polishing station comprises eddy current Monitoring systems.
The cross sectional view of the example magnetic fields that Fig. 2 diagram is generated by eddy current sensor.
The vertical view of Fig. 3 examples shown chemical mechanical polishing stations, described chemical mechanical polishing stations illustrates the sensor scanning pattern across wafer.
Fig. 4 diagram is as the figure of the example eddy current phase place signal of the function of conductive layer thickness.
Fig. 5 diagram is from the figure of the example track of eddy current Monitoring systems.
Fig. 6 is the schema for starting in polishing station the polishing operation to substrate.
Fig. 7 is the schema for substrate is transferred to the 2nd polishing station from the first polishing station.
In various figures, the element that similar element symbol is similar with specifying instruction.
Embodiment
For control a kind of Monitoring techniques of polishing operation be use alternating-current (AC) carry out actuate signal so that the conductive layer on substrate to bring out eddy current. Can record the eddy current brought out during polishing in situ by eddy current sensor to generate signal. Assuming that conductive layer when standing the outermost layer of polishing, then the signal carrying out sensor should depend on the thickness of layer.
The different implementations of eddy current Monitoring systems can use the different aspects of the signal obtained from sensor. Such as, the amplitude of signal can be just at the function of thickness of polished conductive layer. In addition, phase differential between AC actuate signal and the signal carrying out sensor can be just at the function of thickness of polished conductive layer.
Due to the variation of composition and assembly, eddy current sensor can present different gains and skew when measuring eddy current. Such as, eddy current also can be subject to the impact of the variation of the environmental parameter temperature of substrate (during polishing). During operation, variation is (such as, liner weares and teares) or the variation of pressure that is applied on polishing pad is (such as, in in-situ monitoring system) distance between eddy current sensor and substrate can be changed, and also can affect measured eddy current signals. Therefore, the calibration to eddy current Monitoring systems can be performed to compensate these variations.
Fig. 1 illustrates the example of the polishing station 22 of chemical-mechanical polisher. Polishing station 22 comprises rotatable disc-shaped platform 24, and polishing pad 30 is positioned on described platform 24. Platform 24 can operate to rotate around axle 25. Such as, motor 21 pivotable drive axle 28 carrys out rotation platform 24. Polishing pad 30 can be the two-layer polishing pad with outer 34 and softer back sheet 32.
Such as, polishing station 22 can comprise supply port or built-up type supply rinse arm 39 is fitted on polishing pad 30 to be executed by polishing liquid 38 (slurry).
Carrier head 70 can operate admittedly to hold substrate 10 against polishing pad 30. Carrier head 70 is suspended from supporting structure 60 (such as, rotational material frame or track), and is connected to carrier head rotating machine 76 by drive shaft 74 so that this carrier head can rotate around axle 71.Optionally, carrier head 70 can laterally vibrate, and such as, the slide block on rotational material frame or track 60 laterally vibrates, or is laterally vibrated by the rotational oscillation of rotational material frame self. In operation, platform rotates around its central shaft 25, and carrier head rotates around its central shaft 71 and laterally translates across the top surface of polishing pad 30. When having multiple carrier head, each carrier head 70 can have the independent control to its burnishing parameters, and such as, each carrier head solely can be applied to the pressure of each corresponding substrate by Site control.
Carrier head 70 can comprise the set collar 84 for admittedly holding substrate. In some implementations, set collar 84 can comprise the part of highly conductive, and such as, carrier bar can comprise the thin bottom parts of plastics 86 of contact polishing pad with thick top conduction part 88. In some implementations, the part of highly conductive is metal, such as, and just at the metal that polished layer is identical, such as, and copper.
Groove 26 is formed in platform 24, and thin section 36 can be formed in the polishing pad 30 overlayed on groove 26. Groove 26 and thin liner section 36 can be located so that the translation position regardless of carrier head, and groove 26 and thin liner section 36 all pass through during a part for platform rotation below substrate 10. Assuming that polishing pad 30 is two-layer liner, then form thin liner section 36 by removing the part of back sheet 32.
Polishing station 22 can comprise the liner regulator equipment with adjustment dish 31 to maintain the condition of polishing pad.
In some implementations, polishing station 22 comprises the temperature sensor 64 for the temperature in Monitoring systems. Although temperature sensor 64 is illustrated as in FIG through locating with the temperature of the slurry 38 monitored on polishing pad 30 and/or liner 30, but this temperature sensor 64 can be positioned on carrier head inside to measure the temperature of substrate 10.
Polishing station can comprise in-situ monitoring system 40. In-situ monitoring system 40 generates the time value sequence that becomes depending on layer thickness on substrate 10. Particularly, in-situ monitoring system 40 can be eddy current Monitoring systems. Similar eddy current Monitoring systems describes in United States Patent (USP) No. 6,924,641, No. 7,112,960 and No. 7,016,795, and the entire disclosure of these United States Patent (USP)s is incorporated to herein by reference.
In some implementations, polissoir comprises additional polishing station. Such as, polissoir can comprise two or three polishing stations. Such as, polissoir can comprise first polishing station with the first eddy current Monitoring systems and have the 2nd polishing station of the 2nd eddy current Monitoring systems.
Such as, in operation, a large amount of polishings to the conductive layer on substrate can be performed at the first polishing station, and polishing can be stopped when the target thickness of conductive layer keeps on the electrically conductive. Such as, subsequently, substrate is transferred to the 2nd polishing station, and can to substrate polishing to the layer (patterned dielectric layer) being positioned at lower section.
The cross sectional view of the example magnetic fields 48 that Fig. 2 diagram is generated by eddy current sensor 49. Eddy current sensor 49 can be positioned in groove 26 (see Fig. 1) at least in part. In some implementations, eddy current sensor 49 comprises the core core 42 with two pole 42a and 42b and drives coil 44. Magnetic core 42 can receive AC (exchange) electric current driven in coil 44, and can generate magnetic field 48 between 42a and the 42b of pole.The magnetic field 48 generated can extend across thin liner section 36 and enters in substrate 10. Sense wire circle 46 generates the signal depending on the eddy current being induced in the conductive layer 12 of substrate 10.
Fig. 3 illustrates the vertical view of platform 24. When platform 24 rotates, sensor 49 is inswept below substrate 10. By being sampled by the signal carrying out sensor by specific frequency, sensor 49 is across substrate 10, in the generation measurement of a series of resample area 96 place. For inswept each time, can select or be combined in the measurement at one or more resample area 96 place. Thus, via repeatedly inswept, the value sequence become when the measurement selected or combine provides. In addition, can measure outside the position of sensor 49 no fix below substrate 10 performs wafer.
Return see Fig. 1 and Fig. 2, in operation, vibrator 50 is coupled to and drives coil 44, and controls to drive coil 44 to generate oscillating magnetic field 48, and this oscillating magnetic field 48 extends through the main body of core core 42 and extends in the gap between two magnetic pole 42a and 42b of core core 42. The thin liner section 36 extending through polishing pad 30 at least partly in magnetic field 48 also extends in substrate 10.
If conductive layer 12 (such as, metal level) is present on substrate 10, then oscillating magnetic field 48 can generate eddy current in this conductive layer. The eddy current generated can be detected by sense wire circle 46.
Along with polishing proceeds, from conductive layer 12, remove material so that conductive layer 12 is thinner, thereby increase the resistance of conductive layer 12. Therefore, the eddy current brought out in layer 12 proceeds along with polishing and changes. As a result, signal from eddy current sensor changes through polishing along with conductive layer 12. Fig. 4 illustrates graphic representation 400, and this graphic representation 400 illustrates conductive layer thickness and from the relation between the signal of eddy current Monitoring systems 40.
In some implementations, eddy current Monitoring systems 40 exports the signal proportional to the amplitude of the electric current of the flowing in sense wire circle 46. In some implementations, eddy current Monitoring systems 40 exports at the signal driving the phase differential between the electric current of flowing in coil 44 and the electric current of flowing in sense wire circle 46 proportional.
Such as, polishing station 22 also can comprise position transducer 80 (optics interruptor) and survey when eddy current sensor 49 is positioned at below substrate 10 and when eddy current sensor 49 leaves substrate to feel. Such as, the position that position transducer 80 can be assemblied in carrier head 70 is relatively fixed. Flag 82 may be attached to the periphery of platform 24. The attachment point of flag 82 and length are through selecting, and when core core 42 is inswept below substrate 10, this flag 82 available signal notifies position transducer 80.
Or, polishing station 22 can comprise the encoder of the Angle Position for determining platform 24. With the rotation each time of platform, eddy current sensor can be inswept below substrate.
In operation, polishing station 22 use Monitoring systems 40 determine major part packing layer when the removed time and/or be positioned at lower section stopping layer when being exposed. In-situ monitoring system 40 can be used for determining the amount of the surperficial removed material from substrate.
Returning see Fig. 1 and Fig. 3, general programmable digital computer 90 can be connected to sense slowdown monitoring circuit system 94, and this sense slowdown monitoring circuit system 94 can receive eddy current signals.
Computer 90 can through programming with: when substrate overlays on eddy current sensor 49 substantially sample eddy current signals; Store the signal sampled; And end point determination Logic application in the signal stored and is detected polishing end point; And/or calculate burnishing parameters adjustment (such as, to the change of the pressure applied by carrier head) to improve polishing uniformity.Possible endpoint criteria for detector logic comprises region minimum value or maximum value, gradient change, amplitude or gradient face limit value, or the combination of above-mentioned each.
In eddy current Monitoring systems, assembly except coil and core core is (such as, vibrator 50 and sense slowdown monitoring circuit system 94) can away from platform 24, and the assembly being coupled in platform by rotating electrical connector 29, maybe can be arranged in platform and be communicated with the computer 90 of platform exterior by rotating electrical connector 29.
In addition, computer 90 also can through programming with: measure from each time inswept eddy current signals of eddy current sensor 49 below substrate according to sampling frequency, to generate the measurement sequence of multiple resample area 96; Calculate the radial position of each resample area; Amplitude measurement result is divided into multiple radial scope; And use the measuring result from one or more radial scope to determine polishing end point and/or to calculate the adjustment to burnishing parameters.
Due to eddy current sensor 49 with the rotation each time of platform below substrate 10 inswept, therefore assemble the information about conductive layer thickness in situ and in the way of real-time continuously. During polishing, the measurement from eddy current sensor 49 can be displayed on take-off equipment 92 to permit the operator of polishing station visually to monitor the progress of polishing operation. Such as, by measuring result being arranged in radial scope, the feeds of data of the conductive film thickness about each radial scope can be entered controller (computer 90) to adjust the polish pressure distribution applied by carrier head.
In some implementations, controller can use eddy current signals to trigger the change of burnishing parameters. Such as, controller can change paste composition.
Fig. 5 illustrates the track 500 generated by eddy current Monitoring systems. As mentioned above, it is necessary, for sensor when the scanning each time of substrate, to generate, one or more measures 510 to sampling signal. Thus, through repeatedly scanning, eddy current Monitoring systems produces observed value sequence 510. This observed value sequence can be considered track 500. In some implementations, in scanning measure or from the measurement repeatedly scanned can through being averaging or filter such as, (can moving average calculation) to generate the measurement 510 of track 500.
Observed value sequence can be used for determining terminal or the change to burnishing parameters, such as heterogeneity to reduce in wafer. Such as, (observed value about time) function 520 can matching to observed value 510. Function 520 can be polynomial function, such as, and linear function. The time calculated when can arrive target value 530 based on linear function 520 predicts terminal 540.
As mentioned above, it is necessary, due to the change in time of component variations and environment or system parameter, eddy current Monitoring systems may need calibration. When sensor is arranged in chemical mechanical polishing stations 22 at first, eddy current Monitoring systems can be calibrated. Whenever adding carried base board for polishing, can automatically calibrate eddy current Monitoring systems, and/or eddy current Monitoring systems can be calibrated during polishing.
Such as, signal from eddy current sensor may be subject to the impact that environmental parameter (temperature of eddy current sensor self) drifts about. Such as, some change to compensate can to perform drift compensation (as described in No. 7,016,795th, United States Patent (USP) case). But, this drift-compensation techniques may not solve each provenance that signal changes, and possibly cannot meet the process requirements of increasingly stringent.
Can use from the measurement of straight-line type or the substrate of unit test satellite location in conjunction with the measurement from original position eddy current sensor, to calibrate the gain of eddy current Monitoring systems. Such as, can determine from the start signal needed for original position eddy current sensor based on measurement and the working curve from test satellite location. Subsequently, the adjustment to gain can be calculated based on the start signal of expection with comparing of the actual start signal from original position eddy current sensor.
In some implementations, equation (1) can be used to perform calibration with correcting gain. In equation (1), N is the correction factor for correcting gain. D is the required eddy current signals of the conductive layer thickness recorded. S is initial observed value (that is, the eddy current signals recorded when polishing starts), and K is the constant of the expected value representing wafer external position place. K can be set as preset value.
N=(D-K)/(S-K) (1)
New gain G' can calculate based on old gain G and correction factor, such as, and G'=G*N.
In some implementations, the correction factor calculated according to the value of S and D from a substrate is for adjusting the gain of the in-situ monitoring system for that substrate. Such as, calibration can represent and is: Gn=Gn-1*Nn, wherein GnIt is the gain for adjusting the n-th substrate, Gn-1It is the gain for adjusting (n-1) individual substrate, and NnIt it is the correction factor that the value according to S and D determined from the data from n the substrate in ground calculates.
In some implementations, the correction factor calculated according to the value of S and D from a substrate is for adjusting the gain of the in-situ monitoring system for follow-up substrate. Such as, calibration can represent and is: Gn+1=Gn-1*Nn, wherein Gn+1It is the gain for adjusting (n+1) individual substrate, Gn-1It is the gain for adjusting (n-1) individual substrate, and NnIt it is the correction factor that the value according to S and D determined from the data from the n-th substrate calculates.
In some implementations, required eddy current signals D can be calculated based on the working curve of thickness is associated to eddy current signals pre-established (that is, before polishing substrate). Fig. 4 illustrates the example of working curve 410. In some implementations, working curve is based on the eddy current signals value collected from " gold system " polishing station. In the ideal case, therefore, all polishing stations all will generate identical eddy current signals for identical conductive layer thickness.
Such as, Fig. 6 illustrates the technique 600 for controlling substrate polishing (chemically machinery polished). Substrate is selected measured zone (610). This region can be the radial scope of substrate. Such as, the radial scope being defined as having low axle asymmetry based on previous measurement with experience can be selected. Such as, this region can be the radial scope of both the center and peripherals discharging substrate. Such as, this region can be the radial scope of the 20mm to 40mm from substrate center. In some implementations, such as this region can be selected based on the input being input in graphic user interface by user.
Before polishing., in selected region, measure the thickness (620) of outer conducting layer. Outer conducting layer can be metal level, such as, and copper. The thickness recorded is stored as initial conductive layer thickness. This thickness measurement can't help in-situ monitoring system perform. Such as, on the contrary, this thickness measurement can by the such as eddy current metering system (iMap that can buy from company of Applied MaterialsTMRadial scan system) and so on, be applicable to measure the straight formula of conductive layer thickness or unit metering system performs.
Substrate is loaded into the polishing station (630) comprising eddy current Monitoring systems. Being loaded in polishing station by substrate can occur after measuring initial conductive layer thickness. Exemplarily, substrate can be loaded in the polishing station 22 with in-situ monitoring system 40.
Polishing substrate, and receive " original " eddy current signals (640) from the region selected by substrate. Exemplarily, this original eddy current signals can be received by the computer 90 of polishing station 22. As mentioned above, computer 90 can receive the original eddy current signals of whole substrate, and the signal that sampling receives, it may be determined that what each sampled measures the position on substrate, and can be the multiple regions comprising selected region by institute's sampling and measuring sequence. Such as, as described with reference to Figure 3, computer 90 also can receive the original eddy current signals from wafer external position (when eddy current sensor is not below substrate).
Gain and skew by previously having calculated adjust the eddy current data (650) received. Such as, based on V'=V*G+K, adjustment signal value V' can be calculated from original signal value V.
In some implementations, for the n-th substrate, carry out calculated gains based on the data from polishing (n-1) individual substrate formerly. Such as,
V'n=Vn*Gn-1+ K and Gn-1=Gn-2*Nn-1
Wherein, V'nIt is the adjustment signal value of the n-th substrate, VnIt is the original signal value of the n-th substrate, Gn-1It is the gain for adjusting (n-1) individual substrate, Gn-2It is the gain for adjusting (n-2) individual substrate, and Nn-1It it is the correction factor that the value according to S and D determined from the data from (n-1) individual substrate calculates.
Hereinafter with reference to step (670), the gain for calibrating eddy current survey sensor and calculations of offset are described in detail.
In some implementations, such as, when polishing first substrate, this first substrate be batch in first substrate, or the first substrate after having changed polishing pad so that previous data are unreliable or unavailable, then gain is set as preset value G simply0So that V'1=V1*G0+K��
Based on the eddy current data received and the initial conductive layer THICKNESS CALCULATION new gain (or the adjustment to gain) (660) previously recorded. Exemplarily, gain can be performed by the computer 90 of polishing station 22 to calculate. Such as, the correction factor N for gain can be calculated according to following equation:
N=(D-K)/(S-K).
Measure the original depth IT of the conductive layer in selected region in step 620. The expected value D corresponding to original depth IT can be calculated according to working curve 410 (see Fig. 4).
Initial observed value S can be determined according to eddy current data. That is, the eddy current received during the initial period of polishing should correspond to original depth. Such as, once have collected enough data during polishing, then can by function matching to adjusted value sequence. This function can be polynomial function, such as, and linear function.
The S value (see Fig. 5) at place of initial moment T0 can be calculated according to institute's fitting function. The definite initial time (such as, substrate is reduced to the moment contacted with polishing pad) of moment T0 not necessarily polishing operation, but can be some seconds hereafter, such as, 2 seconds or 3 seconds. When not being bound by any particular theory, substrate is used to be reduced to the high signal value that the moment contacted with polishing pad may provide non-natural, because polishing speed at first may be restricted, such as, owing to platform still in the fact accelerating to target speed of rotation.
K can be default value.K may correspond in working curve 410 for the thick value of zero layer. If performing drift compensation (such as, as described in No. 7,016,795th, United States Patent (USP) case), then wafer external signal can be back adjusted to K when scanning each time by drift compensation automatically.
Subsequently, according to old gain G, new gain G' can be calculated as G'=G*N.
In some implementations, new gain is used for follow-up substrate (that is, substrate) after the substrate for generating S value and D value. In the case, gain for (n+1) individual substrate can represent for Gn+1=Gn-1*Nn��
In some implementations, have accumulated enough data with determine current substrate initial value S after, calculate new gain, and use new gain to calculate the clean data set of current substrate. In the case, gain for the n-th substrate can represent for Gn=Gn-1*Nn��
Such as, this new gain can be used for current substrate when polishing first substrate (such as, the first substrate in batch or the first substrate after changing polishing pad). For with after through the substrate of polishing, this new gain can be used for follow-up substrate.
In some implementations, yield value sequence (such as to suppress the noise between wafer and wafer so that gain more smoothly changes) is filtered to generate the filtered yield value for given substrate. Subsequently, G can be replaced and use this filtered yield value in above-mentioned equation. Such as, gain can stand the notch filter of recurrence.
In arbitrary implementation, the data through adjustment are used for determining polishing end point or amendment burnishing parameters (670). Entire data through adjusting can represent through the thickness of conductive layer of polishing, and can be used for triggering the change of burnishing parameters. The example finding polishing end point is above being described with reference to figure 5.
In some implementations, one or more measured zone can be selected, and the thickness in more than one region can be used for calibration eddy current sensor. In some implementations, some place in selected region performs the measurement to original depth. In some implementations, two or more the some places in selected region perform measurement, and the data recorded are averaging.
The resistivity of conductive layer can change with conductive layer temperature change. The eddy current (and the eddy current signals therefore recorded) brought out depends on the resistivity of conductive layer. Polishing substrate adds substrate temperature and reduces the eddy current signals brought out.
If substrate is moved to the 2nd original position polishing station to continue polishing (these two polishing stations all use eddy current to monitor) from the first original position polishing station, then influence of temperature change eddy current signals between these two polishing stations. Temperature compensation can perform as follows:
Ppost=Pini[1+��(TEpost-TEini)](2)
Tini=Tpost[Ppost/Pini](3)
In above-mentioned equation (2) and (3), PpostIt is the resistivity factor of layer at the 2nd polishing station place, and PiniIt is the resistivity factor of same layer at the first polishing station place. TEpostIt is the temperature at the 2nd polishing station place, and TEiniIt it is the temperature at the first polishing station place. Parameter alpha can calculate with experience, and �� is the value of closely zero, such as, and 0.002 to 0.005, such as 0.0032. Parameter alpha can be depending on through the composition of layer of polishing. In some implementations, can such as, by for inputting Selection parameter ��, user can select from the menu listing composition of layer, and from searching the parameter alpha determined table corresponding to selected composition of layer. Equation (5) is used in the thickness correction having between two polishing stations of different temperature and carrying out.
Fig. 7 diagram is used for when the technique 700 that substrate is transferred to the 2nd polishing station control polishing from the first polishing station.Substrate is selected measured zone (710). As mentioned above, it is necessary, region can be the radial scope of substrate. Such as, the radial scope being confirmed as having low axle asymmetry based on measurement formerly with experience can be selected. In some implementations, can by for such as carrying out selected zone based on the input being input in graphic user interface.
At the first polishing station place polishing substrate, and receive " original " the eddy current original signal (720) from the region selected by substrate. Exemplarily, eddy current signals can be received by the computer 90 of polishing station 22. As mentioned above, it is necessary, computer 90 can receive the eddy current signals of whole substrate, and can be the different region comprising selected region by institute's sampling and measuring sequence.
The eddy current data (730) received in the region selected by the first polishing station are adjusted by the first gain and skew. As, above as described in reference step (670), measured from substrate formerly and receive gain and skew, or can according to just calculating gain and skew in the eddy current data of polished current substrate. Can by the first function matching to the eddy current data collected at the first polishing station place. First function can be the first polynomial function, such as, and the first linear function. In some implementations, in the section in short-term (such as, 10 seconds) after starting for polishing, eddy current data may be unreliable, and can be dropped.
Determine first temperature (740) of the glossing at the first polishing station place. In some implementations, this first temperature is the temperature of polishing pad. To substitute or in combination, can measure just at polished substrate temperature. Such as, contact-sensing device and/or non-contacting sensor (infrared sensor) can be used for measuring tempeature. Can periodically measuring tempeature and/or can be centered around first polishing station place stop polishing moment measuring tempeature.
Substrate is transferred to the 2nd polishing station, and measures the 2nd temperature (750) of the 2nd polishing station place technique. Generally speaking, the temperature of the element identical with the first polishing station can be measured. Such as, if the first temperature is the temperature of the polishing pad at the first polishing station place, then the 2nd temperature is the temperature of the polishing pad at the 2nd polishing station place. Similarly, if the first temperature is the temperature of the substrate at the first polishing station place, then the 2nd temperature is the temperature of the substrate at the 2nd polishing station place. Can periodically measuring tempeature and/or the moment measuring tempeature that the 2nd polishing station place polishing starts can be centered around.
Or, when polishing starts at the 2nd polishing station place, system can simply suppose that substrate is in default temperature (such as, room temperature, such as, 21 DEG C), and does not measure the 2nd temperature at the 2nd polishing station place.
At the 2nd polishing station place polishing substrate, and receive the original eddy current signals (760) from the region selected by substrate. Exemplarily, eddy current signals can be received by the computer 90 of polishing station 22. As mentioned above, it is necessary, computer 90 can receive the eddy current raw data of whole substrate, and can be the different region comprising selected region by institute's sampling and measuring sequence. Can by the 2nd function matching to the eddy current data collected at the 2nd polishing station place. 2nd function can be the 2nd polynomial function, such as, and bilinear function.
Eddy current data (770) are received by what the 2nd gain and skew adjusted the 2nd polishing station. As, above as described in reference step (670), measured from substrate formerly and receive gain and skew, or can from currently just calculating gain and skew the eddy current data of polished wafer. In some implementations, as described in equation (2) and (3), the difference of gain adjustable to comprise between the first temperature and the 2nd temperature.
Such as, when substrate is switched to the 2nd polishing station from the first polishing station, the correction factor N of calculated gains can be carried out according to following equation:
N=(D'-K)/(S'-K)
The initial value S' recorded at this 2nd polishing station place can be determined from the eddy current data collected at the 2nd polishing station. Such as, once collect enough data during the polishing at the 2nd polishing station place, such as, the 2nd function (bilinear function) with regard to matching to adjusted value sequence. Can calculate from the 2nd fitting function the 2nd polishing station the initial moment T0 place S value. The definite initial time (such as, substrate is reduced to the moment contacted with polishing pad) of the moment T0 not necessarily polishing operation at the 2nd polishing station place, but can be some seconds hereafter, such as, 2 seconds or 3 seconds.
The final thickness T of the conductive layer in the region selected by the first polishing station place can be determinedpost. In some implementations, the first function is used for calculating for moment TF calculating end value DF, carves TF at this moment, in fact stops at the polishing at the first polishing station place. In some implementations, end value DF is simply target value 530. The final thickness T corresponding to end value DF can be calculated based on working curve 410 (see Fig. 4)post��
In order to perform temperature compensation, based on final thickness TpostAnd the thermometer at two polishing station places calculates the original depth T through adjustment of the 2nd polishing stationini. Such as, can according to Tini=Tpost(Ppost/Pini) calculate the original depth through adjustment. Subsequently, can calculate corresponding to the original depth T through adjustment according to working curve 410 (see Fig. 4)iniExpected value D's. Subsequently, the calculating of gain can proceed as discussed above.
Above-mentioned polissoir and method can be applicable to various polishing system. Polishing pad or carrier head or both are all removable to provide relative movement between glazed surface and substrate. Such as, platform can revolve round the sun along track, but not rotation. Polishing pad can be the liner of the circle (or certain other shape) being fixed to platform. Some aspects of end-point detecting system are applicable in linear polishing system, such as, when polishing pad is linearly moving continuous print or Reel-to-reel type (reel-to-reel) is with. Polishing layer can be standard de (such as, have or the not Packed polyurethane(s) of tool) polishing material, flexible material, or fixed-abrasive. Use the term of location relatively; It is to be understood that glazed surface and substrate can be retained on and be vertically oriented or in certain other orientation.
(namely embodiment can be embodied as one or more computer program, one or more computer program being embodied in non-transient state machinable medium with tangible form), these computer programs are used for performing by data-processing equipment or for the operation of control data treatment facility, described data-processing equipment is such as, programmable processor, computer, or multi-processor or computer. A large amount of embodiments of the present invention have been described. However, it is to be understood that various amendment can be carried out and do not deviate from the spirit and scope of the present invention. Such as, more or less calibration parameter can be used. In addition, calibration and/or drift compensation method can be changed. Thus, other embodiments are in the orientation of appended claims.

Claims (30)

1. controlling a method for polishing, described method comprises following step:
Before polishing first substrate, receive the measurement of the original depth to the conducting film described first substrate from straight formula or unit Monitoring systems;
One or more substrate of polishing in polishing system, one or more substrate described comprises described first substrate;
During one or more substrate described in polishing, eddy current Monitoring systems is utilized to monitor one or more substrate described to generate the first signal;
Determine the initial value initial, described first signal of the polishing of described first substrate;
Gain is determined based on described initial value and to the described measurement of described original depth;
At least part of for described first signal collected during at least one substrate in one or more substrate described in polishing, calculates second signal based on described first signal and described gain; And
Polishing end point is determined at least one substrate described in described substrate or at least one in the adjustment of burnishing parameters based on described second signal.
2. the method for claim 1, the step wherein calculating described second signal comprises following step: be multiplied by described gain.
3. method as claimed in claim 2, the step wherein calculating described second signal comprises following step: calculating V'=V*G+K, wherein V' is described second signal, and V is described first signal, and G is described gain, and K is skew.
4. the method for claim 1, at least one substrate described in one or more substrate wherein said is described first substrate.
5. the method for claim 1, at least one substrate described in one or more substrate wherein said is second substrate through polishing after described first substrate.
6. the method for claim 1, wherein said polishing system comprises rotatable platform, and the eddy current sensor of described eddy current Monitoring systems is supported on described platform with inswept across one or more substrate described, and described method comprises following step: generate described first signal from the part of the signal generated when described eddy current sensor is not adjacent to described substrate.
7. the method for claim 1, wherein determines that the step of described gain comprises following step: from thickness being associated to the calibration function of strength of signal and determines expected value to the described measurement of described original depth.
8. method as claimed in claim 7, wherein determine that the step of described gain comprises following step: calculate multiplier N according to following equation:
N = ( D - K ) ( S - K )
Wherein, D is described expected value, and S is described initial value, and K is constant, and described constant represents the value of described calibration function for zero thickness.
9. method as claimed in claim 8, wherein determines that the step of described gain comprises following step: make old gain be multiplied by N.
10. a computer program, described computer program is with tangible form coding in non-transitory computer-readable medium, and described computer program can operate so that data-processing equipment executable operations, and described operation comprises:
Before polishing first substrate, receive the measurement of the original depth to the conducting film described first substrate from straight formula or unit Monitoring systems;
Making polishing station perform the polishing to one or more substrate in polishing system, one or more substrate described comprises described first substrate;
During one or more substrate described in polishing, eddy current Monitoring systems is utilized to monitor one or more substrate described to generate the first signal;
Determine the initial value initial, described first signal of the polishing of described first substrate;
Gain is determined based on described initial value and to the described measurement of described original depth;
At least part of for described first signal collected during at least one substrate in one or more substrate described in polishing, calculates second signal based on described first signal and described gain;And
Polishing end point is determined at least one substrate described in described substrate or at least one in the adjustment of burnishing parameters based on described second signal.
11. computer programs as claimed in claim 10, wherein determine that the step of described gain comprises following step: from thickness being associated to the calibration function of strength of signal and determines expected value to the described measurement of described original depth.
12. computer programs as claimed in claim 10, wherein determine that the step of described gain comprises following step: calculate multiplier N according to following equation:
N = ( D - K ) ( S - K )
Wherein, D is described expected value, and S is described initial value, and K is constant, and described constant represents the value of described calibration function for zero thickness.
13. 1 kinds of polishing systems, described system comprises:
Rotatable platform, described rotatable platform is for supporting polishing pad;
Carrier head, described carrier head is for admittedly holding first substrate against described polishing pad;
Original position eddy current Monitoring systems, described original position eddy current Monitoring systems comprises sensor to generate the first signal of the thickness of the conductive layer depending on described substrate; And
Controller, described controller is configured to executable operations, and described operation comprises:
Receive described first signal from described sensor;
Determine the initial value initial, described first signal of the polishing of described first substrate;
Gain is determined based on described initial value and to the described measurement of described original depth;
At least part of for the signal collected during first substrate described in polishing or follow-up substrate, calculates second signal based on described signal and described gain; And
Polishing end point is determined for described first substrate or described follow-up substrate or at least one in the adjustment of burnishing parameters based on described second signal.
14. systems as claimed in claim 13, wherein said controller is configured to from thickness being associated to the calibration function of strength of signal and determines expected value to the described measurement of described original depth.
15. systems as claimed in claim 13, wherein said controller is configured to determine described gain by following operation: calculate multiplier N according to following equation:
N = ( D - K ) ( S - K )
Wherein, D is described expected value, and S is described initial value, and K is constant, and described constant represents the value of told calibration function for zero thickness.
16. 1 kinds control the method for polishing, and described method comprises following step:
At the first polishing station place polishing substrate;
When, during substrate described in described first polishing station place polishing, utilizing the first eddy current Monitoring systems to monitor described substrate to generate the first signal;
Determine described substrate the polishing at described first polishing station place end, the end value of described first signal;
Determine first temperature at described first polishing station place;
When after substrate described in described first polishing station place polishing, at substrate described in the 2nd polishing station place polishing;
When, during substrate described in described 2nd polishing station place polishing, utilizing the 2nd eddy current Monitoring systems to monitor described substrate to generate second signal;
Determine the initial value initial, described second signal of the polishing of described substrate at described 2nd polishing station place;
The gain of described 2nd polishing station is determined based on described end value, described initial value and described first temperature;
At least part of for the described second signal collected during at least one substrate at the 2nd polishing station place described in polishing, calculates the 3rd signal based on described second signal and described gain; And
Polishing end point is determined at least one substrate described or at least one in the adjustment of burnishing parameters based on described 3rd signal.
17. methods as claimed in claim 16, wherein determine that the step of the gain of described 2nd polishing station comprises following step further: the 2nd temperature measuring described 2nd polishing station place.
18. methods as claimed in claim 17, wherein just calculate described gain in the resistivity of polished layer based on the first and second temperature.
19. methods as claimed in claim 18, described method comprises following step: determine described substrate the polishing at described first polishing station place end, the end value of described first signal.
20. methods as claimed in claim 19, wherein determine that the step of described end value comprises following step: generate the first observed value sequence from described first signal, by the first function matching to described first observed value sequence; And described end value is calculated as the value that described function locates in the terminal moment of the polishing at described first polishing station place.
21. methods as claimed in claim 19, described method comprises following step: from described end value and be associated to the calibration function of strength of signal by thickness to determine the first thickness.
22. methods as claimed in claim 21, described method comprises following step: determine the thickness through adjustment based on described first thickness, described first temperature and described 2nd temperature.
23. methods as claimed in claim 16, wherein, described first temperature is the temperature of first polishing pad at described first polishing station place, and described 2nd temperature is the temperature of described 2nd polishing pad at the 2nd polishing station place.
24. methods as claimed in claim 16, wherein said first temperature is at described first polishing station place just in the temperature of polished layer, and described 2nd temperature is just in the temperature of polished described layer at described 2nd polishing station place.
25. 1 kinds of computer programs, described computer program is with tangible form coding in non-transitory computer-readable medium, and described computer program can operate so that data-processing equipment executable operations, and described operation comprises:
Make the first polishing station polishing substrate;
When, during substrate described in described first polishing station place polishing, receiving the first signal from the first eddy current Monitoring systems;
Determine described substrate the polishing at described first polishing station place end, the end value of described first signal;
Determine first temperature at described first polishing station place;
When after substrate described in described first polishing station place polishing, make substrate described in the 2nd polishing station polishing;
When, during substrate described in described 2nd polishing station place polishing, receiving the second signal from the 2nd eddy current Monitoring systems;
Determine the initial value initial, described second signal of the polishing of described substrate at described 2nd polishing station place;
The gain of described 2nd polishing station is determined based on described end value, described initial value and described first temperature;
At least part of for the described second signal collected during at least one substrate at the 2nd polishing station place described in polishing, calculates the 3rd signal based on described second signal and described gain; And
Polishing end point is determined at least one substrate described or at least one in the adjustment of burnishing parameters based on described 3rd signal.
26. computer programs as claimed in claim 25, wherein determine that the step of the gain of described 2nd polishing station is further comprising the steps: the 2nd temperature measuring described 2nd polishing station place.
27. computer programs as claimed in claim 26, wherein just calculate described gain in the resistivity of polished layer based on described first temperature and described 2nd temperature.
28. 1 kinds of polishing systems, described polishing system comprises:
First polishing station, described first polishing station comprises: for supporting the first platform of the first polishing pad; First original position eddy current Monitoring systems, described first original position eddy current Monitoring systems comprises the first sensor to generate the first signal of the thickness of the conductive layer depending on substrate; And first temperature sensor;
2nd polishing station, described 2nd polishing station comprises: for supporting the 2nd platform of the 2nd polishing pad; And the 2nd original position eddy current Monitoring systems, described 2nd original position eddy current Monitoring systems comprises the 2nd sensor to generate the second signal of the described thickness of the described conductive layer depending on described substrate;
Carrier head, described carrier head is used for admittedly holding described substrate; And
Controller, described controller is configured to executable operations, and described operation comprises:
When, during substrate described in described 2nd polishing station place polishing, receiving the second signal from the 2nd eddy current Monitoring systems;
Determine the initial value initial, described second signal of the polishing of described substrate at described 2nd polishing station place;
The gain of described 2nd polishing station is determined based on described end value, described initial value and the first temperature of recording by described first temperature sensor;
The described second signal collected during at least one substrate at described 2nd polishing station place for polishing at least part of, calculates the 3rd signal based on described second signal and described gain; And
Polishing end point is determined at least one substrate described or at least one in the adjustment of burnishing parameters based on described 3rd signal.
29. systems as claimed in claim 28, described system comprises the 2nd temperature sensor, and wherein said controller is configured to the 2nd temperature based on recording by described 2nd temperature sensor determines described gain.
30. systems as claimed in claim 28, wherein said controller is configured to just calculate described gain in the resistivity of polished layer based on described first temperature and described 2nd temperature.
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