CN105658729A - Resin composition, substrate, method of manufacturing electronic device and electronic devices - Google Patents
Resin composition, substrate, method of manufacturing electronic device and electronic devices Download PDFInfo
- Publication number
- CN105658729A CN105658729A CN201480057961.4A CN201480057961A CN105658729A CN 105658729 A CN105658729 A CN 105658729A CN 201480057961 A CN201480057961 A CN 201480057961A CN 105658729 A CN105658729 A CN 105658729A
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- electronic component
- substituted
- resin molding
- form layers
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 239000011342 resin composition Substances 0.000 title abstract 4
- 239000002904 solvent Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims description 233
- 239000011347 resin Substances 0.000 claims description 233
- 125000003118 aryl group Chemical group 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 85
- 239000004760 aramid Substances 0.000 claims description 49
- 229920003235 aromatic polyamide Polymers 0.000 claims description 49
- 239000000126 substance Substances 0.000 claims description 46
- 238000009434 installation Methods 0.000 claims description 39
- 125000003545 alkoxy group Chemical group 0.000 claims description 33
- 239000012764 mineral filler Substances 0.000 claims description 25
- 125000005907 alkyl ester group Chemical group 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 125000005843 halogen group Chemical group 0.000 claims description 21
- PUFWGUZSDHANBX-UHFFFAOYSA-N 1-phenyl-9h-fluorene Chemical class C=12CC3=CC=CC=C3C2=CC=CC=1C1=CC=CC=C1 PUFWGUZSDHANBX-UHFFFAOYSA-N 0.000 claims description 20
- 229910052801 chlorine Inorganic materials 0.000 claims description 16
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 claims description 13
- -1 xenyl Chemical group 0.000 claims description 13
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 12
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 11
- 125000004414 alkyl thio group Chemical group 0.000 claims description 11
- 125000001246 bromo group Chemical group Br* 0.000 claims description 11
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 11
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 125000001153 fluoro group Chemical group F* 0.000 claims description 11
- 125000001188 haloalkyl group Chemical group 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 11
- 229910052740 iodine Inorganic materials 0.000 claims description 11
- 239000011630 iodine Substances 0.000 claims description 11
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 abstract description 11
- 238000000605 extraction Methods 0.000 abstract description 9
- 238000000465 moulding Methods 0.000 description 147
- 239000010410 layer Substances 0.000 description 81
- 238000005286 illumination Methods 0.000 description 47
- 239000010408 film Substances 0.000 description 33
- 239000004642 Polyimide Substances 0.000 description 21
- 239000000835 fiber Substances 0.000 description 21
- 229920001721 polyimide Polymers 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000011521 glass Substances 0.000 description 16
- 229920005575 poly(amic acid) Polymers 0.000 description 16
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 12
- 239000004952 Polyamide Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229920002647 polyamide Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000012071 phase Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 5
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229940113088 dimethylacetamide Drugs 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 150000004984 aromatic diamines Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- PASDCCFISLVPSO-UHFFFAOYSA-N benzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1 PASDCCFISLVPSO-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001896 cresols Chemical class 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- MYEWQUYMRFSJHT-UHFFFAOYSA-N 2-(2-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC=C1S(=O)(=O)C1=CC=CC=C1N MYEWQUYMRFSJHT-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- DVGXDSPMPDANGA-UHFFFAOYSA-N 4-(9h-fluoren-1-yl)aniline Chemical class C1=CC(N)=CC=C1C1=CC=CC2=C1CC1=CC=CC=C12 DVGXDSPMPDANGA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 150000002220 fluorenes Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- GQHWSLKNULCZGI-UHFFFAOYSA-N trifluoromethoxybenzene Chemical compound FC(F)(F)OC1=CC=CC=C1 GQHWSLKNULCZGI-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino-carboxylic acids or of polyamines and polycarboxylic acids
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
- C08G69/32—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from aromatic diamines and aromatic dicarboxylic acids with both amino and carboxylic groups aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
- C09D177/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino carboxylic acids or of polyamines and polycarboxylic acids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/50—Physical properties
- C08G2261/57—Physical properties photorefractive, e.g. change of refractive index
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterized by the type of post-polymerisation functionalisation
- C08G2650/04—End-capping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Provided are a resin composition and a substrate that are capable of being used for manufacturing an electronic device having excellent light extraction efficiency. The resin composition contains a polymer and a solvent dissolving the polymer. The resin composition is used to form a layer, and when refractive indexes of the layer along two perpendicular in-plane directions thereof are respectively defined as "Nx" and "Ny" and a refractive index of the layer along a thickness direction thereof is defined as "Nz", Nx, Ny and Nz satisfy a relationship of "(Nx+Ny)/2-Nz" > 0.01. Further, a method of manufacturing the electronic device by using such a substrate, and the electronic device are also provided.
Description
Technical field
The present invention relates to resin combination, substrate, the method for manufacture electronic installation and electronic installation.
Background technology
At means of illumination (electronic installation) as in organic EL (electroluminescent) means of illumination and light emitting diode illuminating apparatus, it is desired to the substrate wherein used should have the transparency. Such as, therefore, as such substrate for means of illumination, it is known to use the substrate (patent documentation 1) formed by transparent resin material (such as polyethylene terephthalate and polycarbonate).
In such means of illumination, when light is launched from the luminous element being arranged on means of illumination, the light launched, by transparent substrates, is then extracted outside means of illumination. That is, from the optical transport of luminous element transmitting out to described device, by transparent substrates, then arrive target object. By this way, target object is by optical illumination. Therefore, it is desired to the light launched should pass through transparent substrates with high-level efficiency. That is, it is desired to means of illumination should have high light extraction efficiency.
But, in above means of illumination, the transmitting light relative to substrate with big input angle is totally reflected. The light extraction efficiency that in means of illumination, this kind of total reflection of light result in means of illumination is tending towards becoming low problem.
Quote list
Patent documentation
Patent 1:JP-A2009-289460
Summary of the invention
It is an object of the present invention to provide the resin combination and substrate that can be used in manufacturing the electronic installation with excellent light extraction efficiency. It is a further object to provide and use such substrate to manufacture the method for electronic installation and described electronic installation.
In order to realize above-mentioned purpose, the present invention comprises following feature (1) to (19).
(1) a kind of resin combination, comprises:
Polymkeric substance; With
Dissolve the solvent of described polymkeric substance,
Wherein said resin combination is for the formation of layer, and when the specific refractory power in direction in the face that described layer is vertical along two be defined as respectively " Nx " and " Ny " and described layer be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01.
(2) according to above resin combination described in (1), wherein said polymkeric substance is aromatic polyamide.
(3) according to above resin combination described in (2), wherein said aromatic polyamide comprises the rigid structure of the amount of 60mol% or higher.
(4) according to above resin combination described in (3), wherein said rigid structure is repeating unit expressed by the following formula:
Wherein n represents the integer of 1 to 4, Ar1Represent by following general formula (A) or (B):
(wherein p=4; R1��R4And R5It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G1It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)), and Ar2Represent by following general formula (C) or (D):
(wherein p=4; R6��R7And R8It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G2It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)).
(5) according to above resin combination described in (5), wherein said rigid structure comprises derived from 4, the structure of 4'-diamino-2,2'-bis trifluoromethyl p-diaminodiphenyl (PFMB) and derived from least one in the structure of tere-phthaloyl dichloride (TPC).
(6) according to above resin combination described in (2), wherein said aromatic polyamide is fully aromatic polyamide.
(7) according to above resin combination described in (2), at least one end of wherein said aromatic polyamide is end-blocking.
(8) according to above resin combination described in (1), the total light transmittance of wherein said layer in sodium line (D line) is 60% or higher.
(9) according to above resin combination described in (1), wherein said resin combination also comprises mineral filler.
(10) for forming a substrate for electronic component thereon, comprising:
Panel-shaped base body component, it has the first surface and two surface relative with described first surface; And
Electronic component form layers, it is arranged on the side on described first surface of described base member, comprises polymkeric substance and is constructed to be permeable on described electronic component form layers and forms electronic component,
Wherein when the specific refractory power in direction in the described electronic component form layers face vertical along two be defined as respectively " Nx " and " Ny " and described electronic component form layers be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01.
(11) according to above substrate described in (10), the thermal expansivity (CTE) of wherein said electronic component form layers is 100ppm/K or less.
(12) according to above substrate described in (10), the mean thickness of wherein said electronic component form layers is 1 micron to 50 microns.
(13) according to above substrate described in (10), wherein said electronic component is organic EL.
(14) manufacture a method for electronic installation, comprising:
Preparation substrate, described substrate comprises:
Panel-shaped base body component, it has the first surface and two surface relative with described first surface, and
Electronic component form layers, it is arranged on the side on described first surface of described base member and comprises polymkeric substance,
Wherein when the specific refractory power in direction in the described electronic component form layers face vertical along two be defined as respectively " Nx " and " Ny " and described electronic component form layers be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01;
The surface of the described electronic component form layers relative with described base member forms described electronic component;
Form tectum to cover described electronic component;
Using up and irradiate described electronic component form layers, thus interface between described base member and described electronic component form layers makes described electronic component form layers peel off from described base member; And
Make to comprise described electronic component, described tectum is separated with described base member with the electronic installation of described electronic component form layers.
(15) according to above method described in (14), the thermal expansivity (CTE) of wherein said electronic component form layers is 100ppm/K or less.
(16) according to above method described in (14), the mean thickness of wherein said electronic component form layers is 1 micron to 50 microns.
(17) according to above method described in (14), wherein said polymkeric substance is aromatic polyamide.
(18) according to above method described in (17), wherein said aromatic polyamide comprises the rigid structure of the amount of 60mol% or higher.
(19) electronic installation that a kind of method limited with the use of above (14) manufactures.
According to the present invention, can form layers with the use of comprising polymkeric substance and dissolve the resin combination of the solvent of described polymkeric substance, wherein when the specific refractory power in direction in the described layer face vertical along two be defined as respectively " Nx " and " Ny " and described layer be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01. It is used as to arrange electronic component form layers (substrate) in an electronic by this layer formed with the use of resin combination. In an electronic, the light launched from luminous element passes through electronic component form layers, is then extracted outside electronic installation. With the use of described layer as arranging electronic component form layers in an electronic, the light extraction efficiency of the light launched and be extracted device can be improved from luminous element.
Accompanying drawing explanation
[Fig. 1] Fig. 1 is the orthographic plan of the embodiment illustrating the organic electroluminescent luminous device that the method for the manufacture electronic installation by applying the present invention manufactures.
[Fig. 2] Fig. 2 is the sectional view of the organic electroluminescent luminous device shown in Fig. 1 along the line A-A of Fig. 1.
[Fig. 3] Fig. 3 is the sectional view of the embodiment illustrating the sensor element that the method for the manufacture electronic installation by applying the present invention manufactures.
[Fig. 4] Fig. 4 is the vertical section figure that the method (method of the manufacture electronic installation of the present invention) manufacturing the organic electroluminescent luminous device shown in Fig. 1 and 2 or the sensor element shown in Fig. 3 is described.
Embodiment
Hereinafter, based on the preferred embodiment shown in accompanying drawing, it is described in detail to method and the electronic installation of the resin combination according to the present invention, substrate, manufacture electronic installation.
First, before describing the method for the resin combination according to the present invention, substrate and manufacture electronic installation, it is described to the organic electroluminescent luminous device (organic el illumination device) manufactured by the method for the manufacture electronic installation of the application of the invention and sensor element. That is, first example as electronic installation of the present invention of organic electroluminescent luminous device and sensor element is described.
<organic EL light emitting device>
First, it is described to the organic electroluminescent luminous device manufactured by the method for the manufacture electronic installation by applying the present invention. Fig. 1 is the orthographic plan of an embodiment of the organic electroluminescent luminous device manufactured by method illustrating the manufacture electronic installation by applying the present invention. Fig. 2 is the sectional view of the organic electroluminescent luminous device shown in Fig. 1 along the line A-A of Fig. 1. In the following description, the front of paper in Fig. 1 is called " on ", the back side of paper in Fig. 1 is called D score, and the upside in Fig. 2 is called " on ", the downside in Fig. 2 is called D score.
Organic el illumination device 1 shown in Fig. 1 and 2 comprises resin molding (electronic component form layers) A formed by the resin combination of the present invention, multiple luminous element C and sealing portion B.
In this organic el illumination device 1, the housing wherein forming enclosed space is constructed by resin molding A and sealing portion B, and luminous element C is arranged in the enclosed space of housing. By arranging luminous element C in the enclosed space of housing, the resistance to air loss for luminous element C can be guaranteed such that it is able to stop oxygen or moisture penetration to luminous element C.
In this embodiment, the enclosed space of housing exists nine luminous element (organic EL) C. Luminous element C its plan view of each leisure has square configuration. Nine luminous elements in enclosed space are arranged on resin molding A, to arrange at uniform intervals with netted pattern (matrix pattern of 3 �� 3).
As shown in Figure 2, the organic el illumination device 1 with such structure can think to have the light-emitting device of such structure: described structure is used for extracting the light launched from luminous element C from the side (by resin molding A) of resin molding A.
As mentioned above, it is necessary, multiple luminous element C to be arranged on resin molding (electronic component form layers) A upper to form netted pattern.
In this embodiment, luminous element C comprises anode 302, negative electrode 306, hole transmission layer 303, emission layer 304 and electron transfer layer 305 separately. Anode 302 and negative electrode 306 are arranged in the face of each other. In addition, hole transmission layer 303, emission layer 304 and electron transfer layer 305 with this kind of order from anode 302 between anode 302 and negative electrode 306 laminated.
In the organic el illumination device with such structure, the light launched from luminous element C passes through resin molding A, is then extracted outside organic el illumination device 1. That is, from the optical transport of luminous element C transmitting out to organic el illumination device, by resin molding A, then arrive target object. By this way, target object is by optical illumination. By carrying out appropriately combined to the kind of the luminescent material etc. comprised in the emission layer 304 of each luminous element C, the organic el illumination device 1 that can send predetermined color can be obtained.
<sensor element>
Then, by be described through application the present invention manufacture electronic installation method manufactured by sensor element. Fig. 3 is the sectional view of the embodiment illustrating the sensor element manufactured by the manufacture electronic installation method by applying the present invention. In the following description, the upside in Fig. 3 is called " on ", the downside in Fig. 3 is called D score.
The sensor element of the present invention is, such as, it is possible to for the sensor element of input unit. In one or more embodiments of present disclosure, the sensor element of the present invention is the sensor element comprising resin molding (electronic component form layers) A formed by the resin combination of the present invention. In one or more embodiments of present disclosure, the sensor element of the present invention is the sensor element formed on the resin molding A on base member 500. In one or more embodiments of present disclosure, the sensor element of the present invention is the sensor element can peeled off from base member 500.
The example of the sensor element of the present invention comprises: for catch image optical sensor element, for sensing hertzian wave electro-magnetic sensor elements, radiate the radiation sensor element such as X-ray for sensing, the magnetic sensor element for sensing magnetic field, for the capacitive sensor element of sensing capacitance change in electrical charge, the pressure sensor component changed for sensed pressure, touch sensing device element and piezoelectric sensor element.
The example of the input unit of the sensor element of the present invention is used to comprise: the light-emitting device of the visual light imaging device use radiation (X-ray) the imaging device radiating (X-ray) sensor element, using optical sensor element, the magnetic sensing device using magnetic sensor element, the touch panel using touch sensing device element or pressure sensor component, the fingerprint verifying apparatus using optical sensor element and use piezoelectric transducer. The input unit of the sensor element of use the present invention also can have the function of take-off equipment such as display function etc.
Hereinafter, the optical sensor element comprising photorectifier will be described as an example of the sensor element of the present invention.
Sensor element 10 shown in Fig. 3 comprises resin molding (electronic component form layers) A formed by the resin combination of the present invention and the multiple image element circuits 11 being arranged on resin molding A.
In this sensor element 10, each image element circuit 11 comprises photorectifier (photo-electric conversion element) 11A and serves as thin film transistor (TFT) 11B of the driving element of photorectifier 11A. By passing the light of resin molding A by each photorectifier 11A sensing, sensor element 10 can serve as optical sensor element.
Resin molding A is provided with gate insulating film 21. Gate insulating film 21 is made up of following: comprise silicon-dioxide (SiO2) film, the unitary film of any one in silicon oxynitride (SiON) film and silicon nitride (SiN) film; Or the laminate film of two or more comprising in these films. Gate insulating film 21 is provided with the first interlayer insulating film 12A. First interlayer insulating film 12A is made up of silicon dioxide film, silicon nitride film etc. This first interlayer insulating film 12A can also serve as protective membrane (passive film) to cover the top of following thin film transistor 11B.
Photorectifier 11A is formed on the selective area of resin molding A by gate insulating film 21 and the first interlayer insulating film 12A. Photorectifier 11A comprises: lower electrode 24, n-type semiconductor layer 25N, i-type semiconductor layer 25I, p-type semiconductor layer 25P, top electrode 26 and the wiring layer 27 formed on the first interlayer insulating film 12A.Lower electrode 24, n-type semiconductor layer 25N, i-type semiconductor layer 25I, p-type semiconductor layer 25P, top electrode 26 and wiring layer 27 are laminated with this kind of order from the first interlayer insulating film 12A side.
Top electrode 26 serve as during opto-electronic conversion to photoelectric conversion layer supply, such as, the electrode of reference potential (inclined electromotive force). Photoelectric conversion layer is made up of n-type semiconductor layer 25N, i-type semiconductor layer 25I and p-type semiconductor layer 25P. Top electrode 26 is connected with the wiring layer 27 of the power supply supply wiring served as supplying reference potential. This top electrode 26 is made up of the nesa coating of ITO (indium tin oxide) etc.
Thin film transistor 11B is made up of such as field-effect transistor (FET). Thin film transistor 11B comprises gate electrode 20, gate insulating film 21, semiconductor film 22, source electrode 23S and drain electrode 23D.
Gate electrode 20 is formed by titanium (Ti), Al, Mo, tungsten (W), chromium (Cr) etc. and is formed on resin molding A. Gate insulating film 21 is formed on gate electrode 20. Semiconductor layer 22 has channel region and is formed on gate insulating film 21. Source electrode 23S and drain electrode 23D is formed on semiconductor film 22. In this embodiment, drain electrode 23D is connected with the lower electrode 24 of photorectifier and source electrode 23S is connected with the repeater electrode 28 of sensor element 10.
In addition, in the sensor element 10 of this embodiment, the 2nd interlayer insulating film 12B, the first flat film 13A, protective membrane 14 and the 2nd flat film 13B are combined in this kind of sequential layer on photorectifier 11A and thin film transistor 11B. In addition, the first flat film 13A is formed opening 3 with near the selective area that formed corresponding to photorectifier 11A thereon.
In the sensor element 10 with this kind of structure, pass resin molding A from outer transmissive to the light sensor element 10 and arrive photorectifier 11A. Therefore, it is possible to sensing is from outer transmissive to the light sensor element 10.
(manufacturing the method for organic el illumination device 1 or sensor element 10)
The organic el illumination device 1 with above-mentioned structure or the sensor element 10 with above-mentioned structure pass through, such as, it may also be useful to the resin combination of the present invention manufactures as follows. That is, the method for the manufacture electronic installation of the present invention manufactures by using for organic el illumination device 1 or sensor element 10.
Fig. 4 is the vertical sectional view that the method (method of the manufacture electronic installation of the present invention) manufacturing the organic electroluminescent luminous device shown in Fig. 1 and 2 or the sensor element shown in Fig. 3 is described. In the following description, the upside in Fig. 4 is called " on ", the downside in Fig. 4 is called D score.
First, it is described to the method manufacturing the organic electroluminescent luminous device 1 shown in Fig. 1 and 2.
[1] first, substrate (substrate of the present invention) is prepared. Described substrate (substrate of the present invention) comprising: panel-shaped base body component 500, and it has the first surface and two surface relative with the first surface; With resin molding (electronic component form layers) A. Resin molding A is arranged on the side on the first surface of base member 500.
[1-A] first, preparation has the first surperficial and the 2nd surface and has the base member 500 of light transmission.
Such as, glass, metal, silicone, resin etc. are used as the constituent material of base member 500. These materials can be used alone or suitably time combinationally using with two or more.
[1-B] then, above forms resin molding A on first surface (surface) of base member 500.Therefore, obtain the substrate (laminated composite in Fig. 4) comprising base member 500 and resin molding A.
Use the resin combination of the present invention to form resin molding A. The resin combination of the present invention comprises polymkeric substance and dissolves the solvent of described polymkeric substance. With the use of such resin combination, define resin molding (electronic component form layers) A comprising described polymkeric substance, wherein when the specific refractory power (wavelength: 589.3nm) in direction in the resin molding A face vertical along two be defined as respectively " Nx " and " Ny " and resin molding A be defined as " Nz " along the specific refractory power (wavelength: 589.3nm) of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01.
The example of method forming resin molding A comprises such method: wherein with the use of the mould shown in Fig. 4 (A) be coated with method by resin combination (varnish) supply at base member 500 first on the surface, then by dry for resin combination and heat (with reference to Fig. 4 (B)).
At this on the one hand, it should be noted that the method for resin combination supply on the first surface of base member 500 is not limited to mould and is coated with method. Many kinds of liquid phase membrane formation process such as ink jet method, spin-coating method, stick coating method, rolling method, line rod formula coating method and dip coating all can be used as this kind of method.
In addition, as mentioned above, it is necessary, the resin combination of the present invention comprises polymkeric substance and dissolves the solvent of described polymkeric substance. With the use of such resin combination, the resin molding A comprising polymkeric substance and meet relation " (Nx+Ny)/2-Nz " > 0.01 can be obtained. This kind of resin combination of the present invention will describe after a while.
In one or more embodiments of present disclosure, with regard to suppressing flexural deformation and/or improving dimensional stability, at the solvent boiling point of the solvent boiling points of about+40 DEG C to about+100 DEG C, the more preferably from about solvent boiling point of the solvent boiling point of+60 DEG C to about+80 DEG C, even more preferably from about at the temperature of the solvent boiling point of+70 DEG C, resin molding A is heat-treated. In one or more embodiments of present disclosure, just suppress flexural deformation and/or improve with regard to dimensional stability, the heat treated temperature in this step [1-B] at about 200 DEG C in the scope of 250 DEG C. In one or more embodiments of present disclosure, with regard to suppressing flexural deformation and/or improving dimensional stability, the heat-up time (time length) in this step [1-B] is being greater than about 1 minute but is less than in the scope of about 30 minutes.
In addition, the step that this step [1-B] that wherein resin molding A is formed on base member 500 makes resin molding A solidify after can being included in dry and heating resin combination. The temperature that resin molding A is solidified depends on the performance of heating installation, but preferably in the scope of 220 DEG C to 420 DEG C, more preferably in the scope of 280 DEG C to 400 DEG C, also more preferably in the scope of 330 DEG C to 370 DEG C, and even more preferably in the scope of 340 DEG C to 370 DEG C. Make time (time length) that resin molding A solidifies in the scope of 5 minutes to 300 minutes or 30 minutes to 240 minutes.
[2] then, the resin molding A being arranged in gained substrate forms nine (multiple) luminous element (electronic component) C, to form netted pattern.
[2-A] first, forms anode (absolute electrode) 302 with netted pattern on resin molding A.
[2-B] then, hole transmission layer 303 is formed on corresponding anode 302 separately to cover anode 302.
[2-C] then, emission layer 304 is formed on corresponding hole transmission layer 303 separately to cover hole transmission layer 303.
[2-D] then, electron transfer layer 305 is formed on corresponding emission layer 304 separately to cover emission layer 304.
[2-E] then, negative electrode 306 is formed on corresponding electron transfer layer 305 separately with overlay electronic transmitting layer 3 05.
At this on the one hand, by using, following method is formed each layer formed in step [2-A] to [2-E]: gas phase membrane formation process, such as sputtering method, vacuum deposition method and CVD; Or liquid phase membrane formation process, such as ink jet method, spin-coating method and casting method.
[3] then, sealing portion B is prepared. Then, resin molding A is arranged sealing portion B to cover each luminous element C. By this way, the enclosed space of housing is formed by resin molding A and sealing portion B. Within the enclosed space, luminous element C is sealed by resin mold A and sealing portion B.
At this on the one hand, above-mentioned resin molding A and sealing portion B seals by being placed in by tackiness agent between resin molding A and sealing portion B, and then dry described tackiness agent carries out.
By carrying out above-mentioned steps [1] to [3], base member 500 defines the organic el illumination device 1 (with reference to Fig. 4 (C)) comprising resin molding A, luminous element C and sealing portion B.
[5] then, resin molding (electronic component form layers) A is penetrated with the illumination from base member 500 side.
Interface between base member 500 and resin molding A like this makes resin molding A peel off on the surface from the first of base member 500.
Therefore, make organic el illumination device (electronic installation) 1 be separated with base member 500 (with reference to Fig. 4 (D)).
Light to resin molding A to be illuminated is not particularly limited in particular types, as long as resin molding A can be made to peel off on the surface from the first of base member 500 in the interface between base member 500 and resin molding A by penetrating resin molding A with this illumination. Described light is preferably laser. With the use of laser, it is possible to reliably interface between base member 500 and resin molding A makes resin molding A peel off from base member 500.
In addition, the example of laser comprises the excimer laser of impulse hunting type or sequential filming type, carbon dioxide laser, YAG laser and YVO4Laser.
By carrying out above-mentioned steps [1] to [5], the organic el illumination device 1 peeled off from base member 500 can be obtained.
Then, the method manufacturing the sensor element shown in Fig. 3 will be described.
[1] first, in the way of identical with the method manufacturing the organic electroluminescent luminous device 1 shown in Fig. 1 and 2, prepare the substrate (substrate of the present invention) of resin molding (electronic component form layers) A comprising base member 500 and formed on base member 500. Due to identical with the method for the organic electroluminescent luminous device of above-mentioned manufacture 1 for forming the step of resin molding A on base member 500, so omitting the description for the step forming resin molding A on base member 500 (with reference to Fig. 4 (A) and Fig. 4 (B)) at this.
[2] then, the resin molding A being arranged in the substrate obtained forms the sensor element 10. Specific method it is not particularly limited in for forming the method for sensor element 10 on resin molding A. Resin molding A is formed sensor element 10 suitably to select with the sensor element expected for manufacturing or the known suitable method revised carries out.
By carrying out above-mentioned steps [1] to [2], base member 500 forms the sensor element 10 (with reference to Fig. 4 (C)) comprising resin molding A, image element circuit 11.
[3] then, resin molding (electronic component form layers) A is penetrated to be peeled off from base member 500 by sensor element (electronic installation) 10 (with reference to Fig. 4 (D)) with the illumination from base member 500 side.Owing to the step for being peeled off from base member 500 by sensor element 10 is identical with the above-mentioned step for organic el illumination device 1 being peeled off from base member 500, omit the description for the step peeled off from base member 500 by sensor element 10 at this.
By carrying out above-mentioned steps [1] to [3], it is possible to obtain the sensor element 10 peeled off from base member 500.
In the organic el illumination device with above-mentioned structure, it is desired to the light launched from luminous element C should with high-level efficiency by resin molding A. But, the transmitting light relative to resin molding A with big input angle is totally reflected. The light extraction efficiency that in organic el illumination device 1, this kind of total reflection of light result in organic el illumination device 1 is tending towards becoming low problem.
In the sensor element 10 with above-mentioned structure, it is desired to should with high-level efficiency by resin molding A from external transmission to the light sensor element 10. But, the transmitting light relative to resin molding A with big input angle is totally reflected. The light that in sensor element 10, this kind of total reflection of light result in sensor element 10 is introduced efficiency and is tending towards becoming low problem.
Herein, when in the face that resin molding A is vertical along two, the specific refractory power in direction is defined as " Nx " and " Ny " respectively, resin molding A is defined as " Nz " along the specific refractory power of its thickness direction, and when the thickness of resin molding A is defined as " d ", resin molding A is represented along the phase differential " Rth " (thickness direction phase differential) of its thickness direction by following formula (1).
Rth={ (Nx+Ny)/2-Nz} �� d (1)
The present inventor has paid close attention to the value of Rth (thickness direction phase differential) and conscientiously have studied the relation between the value of Rth (thickness direction phase differential) and the total reflection of light incided on resin molding A. Therefore, the present inventor finds, by value (that is, the out-of-plane birefringence (dn of " (Nx+Ny)/2-Nz " that will comprise in above expression formula (1)Outward)) being set greater than 0.01, that is, by meeting relation " (Nx+Ny)/2-Nz " > 0.01, can overcome the above problems. Specifically, w of the present invention finds, even if the light launched from luminous element C has big input angle relative to resin molding A, also suitably suppress with co-relation by setting the value of " (Nx+Ny)/2-Nz " to meet or prevent light to be totally reflected, and the light of the light extraction efficiency and sensor element 10 therefore improving above-mentioned organic el illumination device 1 introduces efficiency. Based on such discovery, the present inventor completes the present invention.
As mentioned above, it is necessary, the resin combination that the resin molding A with above-mentioned structure comprises polymkeric substance by using and dissolves the present invention of the solvent of described polymkeric substance is formed. Hereinafter, it is described in detail to the constituent material in the resin combination being included in the present invention.
<polymkeric substance>
Use polymkeric substance as the main raw of resin molding (electronic component form layers) A being made up of resin combination. Polymkeric substance is included in resin combination to form resin molding A to meet relation " (Nx+Ny)/2-Nz " > 0.01.
As mentioned above, it is necessary, described polymkeric substance is not particularly limited in concrete kind, as long as resin molding A can meet relation " (Nx+Ny)/2-Nz " > 0.01. The example of polymkeric substance comprises aromatic polyamide, aromatic polyimide (and/or aromatic polyamic acid), alicyclic polyamide and alicyclic polyimides. These polymkeric substance can separately or combinationally using with two or more. Wherein, it is preferable that by aromatic polyamide or aromatic polyimide (and/or aromatic polyamic acid) as polymkeric substance.With the use of aromatic polyamide or aromatic polyimide as polymkeric substance, can easily landform resin film A to meet relation " (Nx+Ny)/2-Nz " > 0.01. In addition, also irradiate the interface of resin molding A between base member 500 and resin molding A by using up resin molding A is peeled off effectively.
It is also preferred that, aromatic polyamide is fully aromatic polyamide. With the use of fully aromatic polyamide as the polymkeric substance for resin molding A, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of the resin molding A formed is set as dropping in above-mentioned scope. At this on the one hand, it should be noted that fully aromatic polyamide refers to that all amido linkages being included in aromatic polyamide main chain are bonded each other by aromatic group (aromatic nucleus) and are not bonded each other by chain shape or cyclic aliphatic group.
In view of foregoing teachings, it is preferred that aromatic polyamide has the repeating unit represented by following general formula (I):
Wherein x represents the integer of 1 or bigger, Ar1Represent by following general formula (II) or (III):
(wherein p=4; R1��R4And R5It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G1It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)), and Ar2Represent by following general formula (IV) or (V):
(wherein p=4; R6��R7And R8It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G2It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)).
In addition, aromatic polyamide preferably comprises 60mol% or more, and the rigid structure (rigid component) of the more preferably amount of 95mol% or more. By being set as dropping in above-mentioned scope by the amount of rigid structure in aromatic polyamide, can further improve the degree of crystallinity of aromatic polyamide. This makes it possible to form resin molding A more reliably to meet relation " (Nx+Ny)/2-Nz " > 0.01.
In this manual, rigid structure refers to that the monomer component (repeating unit) forming aromatic polyamide has linearly in its main structure (skeleton). Specifically, rigid structure is the repeating unit represented by general formula (I), general formula (VI) or general formula (VII).In addition, the Ar in the repeating unit represented by general formula (I)1Represent by following general formula (A) or (B):
(wherein p=4, R1��R4And R5It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G1It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, 9 be substituted, 9-fluorenes base and the OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, 9, the two phenyl fluorenes base of 9-is be substituted 9, the two phenyl fluorenes base of 9-)), and the Ar in the repeating unit represented by general formula (I)2Represent by following general formula (C) or (D):
(wherein p=4, R6��R7And R8It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G2It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)).
Ar1Specific examples comprise the structure derived from tere-phthaloyl dichloride (TPC) and Ar2Specific examples comprise the structure derived from 4,4'-diamino-2,2'-bis trifluoromethyl p-diaminodiphenyl (PFMB).
In addition, the number-average molecular weight (Mn) of aromatic polyamide is preferably 6.0 �� 104Or bigger, it is more preferable to 6.5 �� 104Or bigger, it is more preferable to 7.0 �� 104Or bigger, also more preferably 7.5 �� 104Or bigger, and even more preferably 8.0 �� 104Or it is bigger. In addition, the number-average molecular weight of aromatic polyamide is preferably 1.0 �� 106Or less, it is more preferable to 8.0 �� 105Or less, also more preferably 6.0 �� 105Or less, and even more preferably 4.0 �� 105Or it is less. With the use of the aromatic polyamide meeting above-mentioned condition, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
In this manual, the number-average molecular weight (Mn) of aromatic polyamide and weight-average molecular weight (Mw) are measured with gel permeation chromatography. Specifically, it is measured with the use of the method in following examples.
In addition, the molecular weight distribution (=Mw/Mn) of aromatic polyamide is preferably 5.0 or less, it is more preferable to 4.0 or less, it is more preferable to 3.0 or less, and also more preferably 2.8 or less, also more preferably 2.6 or less, and even more preferably 2.4 or less. In addition, the molecular weight distribution of aromatic polyamide is preferably 2.0 or bigger. With the use of the aromatic polyamide meeting above-mentioned condition, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10.In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
As for aromatic polyimide and aromatic polyamic acid, it is preferred that aromatic polyimide and aromatic polyamic acid are respectively all aromatic polyimide and fully aromatic polyamide acid. With the use of all aromatic polyimide and/or fully aromatic polyamide acid as the polymkeric substance of resin molding A, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of the resin molding A formed is set as dropping in above-mentioned scope. At this on the one hand, it should be noted that all aromatic polyimide and fully aromatic polyamide acid refer to that all imide bonds being included in aromatic polyimide or aromatic polyamic acid main chain are bonded each other by aromatic group (aromatic nucleus) and are not bonded each other by chain shape or cyclic aliphatic group.
In view of foregoing teachings, it is preferred that the two-repeating unit that aromatic polyimide and/or aromatic polyamic acid have the first repeating unit represented by following general formula (VI) and represent by following general formula (VI'):
Wherein Ali is selected from: monocycle or many rings alicyclic unit separately with 4 to 20 carbon numbers, Ar1It is selected from " cardo " unit represented by following general formula (VII):
(wherein n=1 to 4; R1It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; Each R1Can be same to each other or different to each other; And ring is have or do not have the list of substituting group or polycycloaliphatic or aromatic series unit.
In addition, the respective number-average molecular weight (Mn) of aromatic polyimide and aromatic polyamic acid is preferably 6.0 �� 104Or bigger, it is more preferable to 6.5 �� 104Or bigger, it is more preferable to 7.0 �� 104Or bigger, also more preferably 7.5 �� 104Or bigger, and even more preferably 8.0 �� 104Or it is bigger. In addition, the respective number-average molecular weight of aromatic polyimide and aromatic polyamic acid is preferably 1.0 �� 106Or less, it is more preferable to 8.0 �� 105Or less, also more preferably 6.0 �� 105Or less, and even more preferably 4.0 �� 105Or it is less. With the use of the aromatic polyimide and/or the aromatic polyamic acid that meet above-mentioned condition, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic EL display 1 or sensor element 10. In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
In this manual, the respective number-average molecular weight (Mn) of aromatic polyimide and aromatic polyamic acid and weight-average molecular weight (Mw) are measured with gel permeation chromatography. Specifically, it is measured with the use of the method in following examples.
In addition, the respective molecular weight distribution (=Mw/Mn) of aromatic polyimide and aromatic polyamic acid is preferably 5.0 or less, it is more preferable to 4.0 or less, more preferably 3.0 or less, also more preferably 2.8 or less, also more preferably 2.6 or less, and even more preferably 2.4 or less. In addition, the respective molecular weight distribution of aromatic polyimide and aromatic polyamic acid is preferably 2.0 or bigger. With the use of the aromatic polyimide and/or the aromatic polyamic acid that meet above-mentioned condition, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10.In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
In addition, preferably, aromatic polyamide and aromatic polyimide (and/or aromatic polyamic acid) make the step of its redeposition obtain after being synthesized separately at aromatic polyamide and aromatic polyimide (and/or aromatic polyamic acid). With the use of the aromatic polyamide obtained by the step of redeposition or aromatic polyimide (and/or aromatic polyamic acid), it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
In one or more embodiments of present disclosure, to end-COOH base and the end-NH of polymkeric substance2One of base or both carry out end-blocking. From the thermotolerance angle improving film (that is, resin molding A), end-capped is preferred. The end of polymkeric substance is by (being-NH at its each end with Benzoyl chloride reaction2When) or by carrying out end-blocking with aniline reaction (when its each end is COOH). But, the method for end-blocking is not limited to the method.
<mineral filler>
In addition to the polymer, resin combination can comprise a certain amount of mineral filler so that can not destroy resin molding A when peeling off resin molding A from base member 500 in the method in above-mentioned manufacture organic el illumination device 1 or sensor element 10. With the use of the resin combination comprising mineral filler, it is possible to reduce the thermal expansivity of resin molding A.
This mineral filler is not particularly limited in particular types, but preferably forms particle shape or be preferably made up of fiber.
In addition, the constituent material for mineral filler is not particularly limited in certain material, as long as it is inorganic materials. This kind comprises for the example of the constituent material of mineral filler: metal oxide, such as silicon-dioxide, aluminum oxide and titanium oxide; Mineral substance, such as mica; Glass; And mixture. These materials can be used alone or combinationally using with two or more. At this on the one hand, the example of glass types comprises: E glass, C glass, A glass, S glass, D glass, NE glass, T glass, glass with low dielectric constant and high-k glass.
When mineral filler is made up of fiber, the fiber diameter of fiber is preferably in the scope of 1nm to 1000nm. With the use of the resin combination comprising the mineral filler with above-mentioned fiber diameter, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
Herein, fiber can be formed by ultimate fibre. It is included in ultimate fibre wherein not arrange each other not parallelly and fully separate each other, so that the Liquid precursor of matrix resin enters between ultimate fibre. In this case, fiber diameter is corresponding to the mean diameter of ultimate fibre. In addition, fiber can form a wire thing of wherein multiple ultimate fibre Cheng Shu. In this case, fiber diameter is defined as the mean value of the diameter of this wire thing. Specifically, fiber diameter is measured by the method in embodiment. In addition, from the visual angle improving film transparency, the fiber diameter of fiber is preferably less. In addition, the specific refractory power of the polymkeric substance comprised in resin combination (polymers soln) and the specific refractory power of mineral filler are preferably closer to each other.Such as, when to wait to be used as refractive index difference under 589nm wavelength of the material of fiber and polymkeric substance be 0.01 or less, regardless of Fibre diameter, the film with high-clarity can be formed. In addition, the example of the method measuring fiber diameter comprises the method with electron microscope observation fiber.
In addition, when mineral filler forms particle shape, the median size of particle is preferably in the scope of 1nm to 1000nm. With the use of the resin combination comprising the mineral filler in the particle form with above-mentioned median size, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition can reliably be set as dropping in above-mentioned scope by the value of " (the Nx+Ny)/2-Nz " of resin molding A.
Herein, the median size of particle refers to corresponding on average projecting circular diameter. Specifically, the median size of particle is measured by the method in embodiment.
The shape of each particle is not particularly limited in specified shape. The example of such shape comprises the shape of spherical, clavate, plate shape spherical, perfect and combination thereof. With the use of the mineral filler with this kind of shape, it is possible to reliably value by " (the Nx+Ny)/2-Nz " of resin molding A is set as dropping in above-mentioned scope.
In addition, the median size of particle is preferably less. In addition, the specific refractory power of the polymkeric substance comprised in resin combination (polymers soln) and the specific refractory power of mineral filler are preferably closer to each other. This makes the transparency that can improve resin molding A further. Such as, when to wait to be used as refractive index difference under 589nm wavelength of the material of particle and polymkeric substance be 0.01 or less, regardless of particle diameter, the resin molding A with high-clarity can all be formed. In addition, the example of the method measuring median size comprises the method measuring median size with particle size analyzer.
In the solid matter comprised in resin combination (polymers soln), the ratio of mineral filler is not particularly limited in particular value, but preferably in the scope of 1 volume % to 50 volume %, more preferably in the scope of 2 volume % to 40 volume %, and even more preferably in the scope of 3 volume % to 30 volume %. On the other hand, in the solid matter comprised in resin combination (polymers soln), the ratio of polymkeric substance is not particularly limited in particular value, but preferably in the scope of 50 volume % to 99 volume %, more preferably in the scope of 60 volume % to 98 volume %, and even more preferably in the scope of 70 volume % to 97 volume %.
At this on the one hand, it should be noted that " solid matter " refers to the component except solvent comprised in resin combination in this manual. The volume conversion of the volume conversion of solid matter, the volume conversion of mineral filler and/or polymkeric substance can be calculated by the usage quantity of component each when preparing polymers soln. Or, it can also calculate by removing solvent from polymers soln.
<other components>
In addition, if necessary, resin combination can comprise antioxidant, UV light absorber, dyestuff, pigment, filler (mineral filler as other) etc., and the function to the basal layer in organic el illumination device 1 or sensor element 10 is not impaired and resin molding A can meet relation " (Nx+Ny)/2-Nz " > degree of 0.01.
<amount of solid matter>
The ratio of the solid matter comprised in resin combination is preferably 1 volume % or bigger, it is more preferable to ground 2 volume % or bigger, and even more preferably 3 volume % or bigger.In addition, the ratio of the solid matter comprised in resin combination is preferably 40 volume % or less, it is more preferable to 30 volume % or less, and even more preferably 20 volume % or less. By being set as dropping in above-mentioned scope by the ratio of the solid matter comprised in resin combination, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition, it is possible to reliably form resin molding A to meet relation " (Nx+Ny)/2-Nz " > 0.01.
<solvent>
The solvent of dissolve polymer can be used as the solvent for the preparation of the varnish (fluent material) comprising resin combination.
In one or more embodiments of present disclosure, with regard to improving polymkeric substance solubleness in a solvent, solvent is preferably polar solvent or comprises the mixed solvent of one or more of polar solvent. In one or more embodiments of present disclosure, with regard to improving polymkeric substance solubleness in a solvent and the binding property that improves between resin molding A and base member 500, solvent is preferably: cresols; DMAC N,N' dimethyl acetamide (DMAc); METHYLPYRROLIDONE (NMP); Dimethyl sulfoxide (DMSO) (DMSO); 1,3-dimethyl-2-imidazolidinone (DMI); N, dinethylformamide (DMF); Ethylene glycol butyl ether (BCS); Gamma-butyrolactone (GBL); Or comprise cresols, N, N-N,N-DIMETHYLACETAMIDE (DMAc), METHYLPYRROLIDONE (NMP), dimethyl sulfoxide (DMSO) (DMSO), 1,3-dimethyl-2-imidazolidinone (DMI), N, the mixed solvent of at least one in dinethylformamide (DMF), ethylene glycol butyl ether (BCS) and gamma-butyrolactone (GBL); Its combination; Or comprise the mixed solvent of at least one in its polar solvent.
<manufacturing the method for resin combination>
By such as using the manufacture method comprising the following steps (a) to (d) to manufacture above-mentioned resin combination.
Hereinafter, aromatic polyamide will be used as polymkeric substance and situation that resin combination comprises mineral filler is described.
But, the resin combination of the present invention is not limited by the resin combination used manufactured by following manufacture method.
Carry out step (a) to obtain mixture by dissolving at least one aromatic diamine in a solvent. Carry out step (b) to obtain free hydrochloric acid and polyamide solution by making at least one aromatic diamine and at least one aromatic dicarboxylic acid two chlorine react in described mixture. Carry out step (c) with by removing the free hydrochloric acid in described mixture with capture agent reaction. Carry out step (d) to add mineral filler in mixture.
In one or more embodiment of the method for the manufacture of polyamide solution of present disclosure, the example of aromatic dicarboxylic acid two chlorine comprises the compound represented by following general formula (VIII) and (IX):
Wherein p=4, R1��R4And R5It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof, and G1It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted).
Especially, the example of aromatic dicarboxylic acid two chlorine as above comprises following compound.
Tere-phthaloyl dichloride (TPC)
Isophthaloyl two chlorine (IPC)
4,4'-biphenyl dicarbapentaborane two chlorine (BPDC)
In one or more embodiment of the method for the manufacture of polyamide solution of present disclosure, the example of aromatic diamine comprises the compound represented by following general formula (X) and (XI):
Wherein p=4, m=1 or 2, and wherein R6��R7And R8It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof, each R6Identical or different, each R7Identical or different, each R8Identical or different, and G2It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, O atom, S atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted).
Especially, the example of aromatic diamine as above comprises following compound.
4,4'-diamino-2,2'-bis trifluoromethyl p-diaminodiphenyl (PFMB)
Two (4-aminophenyl) fluorenes (FDA) of 9,9-
Two (fluoro-4 aminophenyls of the 3-) fluorenes (FFDA) of 9,9-
The two trifluoromethoxy p-diaminodiphenyl (PFMOB) of 4,4'-diamino-2,2'-
4,4'-diamino-2,2'-bis trifluoromethyl phenyl ether (6FODA)
Two (4-amino-2-4-trifluoromethylphenopendant) benzene (6FOQDA)
Two (4-amino-2-4-trifluoromethylphenopendant) biphenyl (6FOBDA)
4,4'-diamino diphenyl sulfone (DDS)
About diamino diphenyl sulfone (DDS), diamino diphenyl sulfone can be the 4,4'-diamino diphenyl sulfone, 3,3'-diamino diphenyl sulfone or the 2,2'-diamino diphenyl sulfone that represent by upper formula.
In one or more embodiment of the method for the manufacture of polyamide solution of present disclosure, prepare aromatic polyamide by polycondensation in a solvent, in wherein said reaction generate hydrochloric acid by capture agent as propylene oxide (PrO) is caught.
In one or more embodiments of present disclosure, the reaction of hydrochloric acid and capture agent produces volatile products.
In one or more embodiments of present disclosure, with regard to polyamide solution use in the process, capture agent is propylene oxide. In one or more embodiments of present disclosure, before the step (c) or period in mixture, add capture agent. By before the step (c) or period add capture agent, it is possible to the degree of viscosity and the generation of condensation in mixture after being reduced in step (c), thus improve the productivity of polyamide solution. When capture agent be organic reagent such as propylene oxide time, these effects become especially remarkable.
In one or more embodiments of present disclosure, with regard to improving the thermotolerance of resin molding A, described method also comprises the end-COOH base to aromatic polyamide and end-NH2One of base or both carry out the step of end-blocking. By (being-NH at its each end with Benzoyl chloride reaction2When) or by the end of aromatic polyamide being carried out end-blocking with aniline reaction (when its each end is COOH).But, the method for end-blocking is not limited to the method.
In one or more embodiments of present disclosure, with regard to polyamide solution use in the process, aromatic polyamide was first made to be separated from polyamide solution with the dissolving again in solvent by precipitation before adding mineral filler.
Redeposition is undertaken by currently known methods. In one or more embodiments of present disclosure, redeposition is undertaken by following step: by aromatic polyamide is added into such as methyl alcohol, ethanol, Virahol etc., aromatic polyamide is precipitated; Washing aromatic polyamide; And aromatic polyamide is dissolved in described solvent again.
Above-mentioned solvent can be used as the solvent for the production of polymers soln.
In one or more embodiments of present disclosure, with regard to polyamide solution use in the process, produce polyamide solution and make described solution not comprise inorganic salt.
By carrying out above-mentioned steps, it is possible to manufacture resin combination.
In addition, the resin molding A formed with the use of the resin combination obtained by above-mentioned steps comprises polymkeric substance. Therefore, resin molding A can be formed to meet relation " (Nx+Ny)/2-Nz " > 0.01. Especially, resin molding A preferably meets relation " (Nx+Ny)/2-Nz " > 0.02, more preferably meet relation " (Nx+Ny)/2-Nz " > 0.03, even more preferably meet relation " (Nx+Ny)/2-Nz " > 0.05. The resin molding A meeting above condition by being formed, can further improve the light extraction efficiency of the light by resin molding A.
In addition, the total light transmittance of resin molding A in sodium line (D line) formed with the use of resin combination is preferably set to 60% or higher, it is more preferably 65% or higher, it is more preferably also 70% or higher, and be even more preferably 80% or higher. By being set as dropping in above-mentioned scope by the total light transmittance of resin molding A, resin molding A can have excellent light extraction efficiency. According to the present invention, owing to resin molding A comprises polymkeric substance, it is possible to easily obtain total light transmittance and drop on the resin molding A in such above scope.
The thermal expansivity (CTE) of resin molding A is preferably 100.0ppm/K or less, it is more preferable to 80ppm/K or less, also more preferably 60ppm/K or less and even more preferably 40ppm/K or less. At this on the one hand, it should be noted that the CTE of resin molding A can obtain with thermomechanical analyzer (TMA). By being set as CTE dropping in above-mentioned scope, it is possible to reliably suppress or prevent the warpage comprising the substrate of base member 500 and resin molding A. Therefore, it is possible to improve the surrender ratio of the organic el illumination device 1 or sensor element 10 obtained with the use of this kind of substrate.
When resin molding A comprises mineral filler, relative to the volume of resin molding A, the amount of the mineral filler comprised in resin molding A is preferably in the scope of 1 volume % to 50 volume %, more preferably in the scope of 2 volume % to 40 volume %, and in the scope of even more preferably 3 volume % to 30 volume %. By adding mineral filler with above-mentioned amount in resin molding A, it is possible to easily be set as dropping in above-mentioned scope by the value of " (Nx+Ny)/2-Nz " and CTE. At this on the one hand, the volume conversion of resin molding A and/or the volume conversion of mineral filler can be calculated by component usage quantity when preparing resin combination respectively, or it can also obtain by measuring the volume of resin molding A.
In addition, the mean thickness of resin molding A is not particularly limited in particular value, but is preferably 50 microns or less, it is more preferable to 30 microns or less, and even more preferably 20 microns or less. In addition, mean thickness is preferably 1 micron or bigger, it is more preferable to 2 microns or bigger, and even more preferably 3 microns or bigger. With the use of the resin molding A with above-mentioned mean thickness, it is possible to make the function of the basal layer that resin molding A is reliably provided as in organic el illumination device 1 or sensor element 10. In addition, it is possible to reliably suppress or prevent the generation in crack in resin molding A.
In this embodiment, the shape of luminous element C (light-emitting zone) in its orthographic plan is square, but is not limited to this. Such as, such as, it can be arbitrary shape, such as Polygons (trilateral, hexagon) and circular (accurately circular, oval).
Although the method for the resin combination of the present invention, substrate, manufacture electronic installation and electronic installation being described based on embodiment, but the present invention is not limited thereto.
Such as, in the resin combination and substrate of the present invention, each component all can be provided any component of identical function to replace. Or any component can be added wherein.
In addition, in the method for the manufacture electronic installation of the present invention, also one or more step can be added for any object.
In addition, in the above-described embodiment, it may also be useful to the method for the manufacture electronic installation of the present invention manufactures and comprises organic EL as the organic el illumination device of luminous element and the sensor element comprising photorectifier. But, the method for the manufacture electronic installation of the present invention is not limited to this. Such as, the method of the manufacture electronic installation of the present invention not only can be used for manufacturing other means of illumination and such as comprises the light emitting diode illuminating apparatus of photodiode as luminous element, also can be used for manufacturing multiple electronic installation, such as comprise sensor element as electronic component input unit, comprise display element as electronic component display unit, comprise optical element as the Optical devices of electronic component and comprise the solar cell of photo-electric conversion element as electronic component.
Embodiment
Hereinafter, based on specific embodiment, the present invention will be described in detail.
1. the preparation of resin combination and the formation of resin molding
<embodiment 1>
<preparation of resin combination>
<1>PFMB (3.2024g, 0.01mol) and DMAc (30ml) is added in the 250ml tri-neck round-bottomed flask being equipped with mechanical stirrer, nitrogen inlet and outlet, to obtain solution.
<2>after PFMB dissolves completely, in solution, PrO (1.4g, 0.024mol) is added. Then, solution is cooled to 0 DEG C.
<3>under agitation, in solution, add TPC (1.485g, 0.00700mol) and IPC (0.636g, 0.0030mol), then wash flask walls with DMAc (1.5ml).
<4>after two hours, in solution, add Benzoyl chloride (0.032g, 0.23mmol) and stir two hours again.
<formation of resin molding (polyamide membrane)>
Resin molding is formed on the glass substrate with the use of prepared resin combination.
That is, first with spin-coating method, resin combination is applied on flat glass substrate (10cm �� 10cm, " EAGLEXG " produced by CorningInc., U.S.A.).
Then, by resin combination drying 30 minutes or more of a specified duration to obtain film at the temperature of 60 DEG C. Afterwards, temperature is made to be increased to 350 DEG C from 60 DEG C.By keeping the temperature of 350 DEG C within 30 minutes, to make described film stand solidification treatment under vacuum atmosphere or inert atmosphere. So, resin molding is defined on the glass substrate.
At this on the one hand, the thickness of resin molding is 23 microns.
<embodiment 2>
By with implement 1 identical in the way of prepare the resin combination of embodiment 2, difference is, the combination of TPC and IPC is turned into the dichloride component that the combination of TPC (0.955g, 0.00450mol) and IPC (1.166g, 0.00550mol) uses in step<3>. Hereafter, the resin molding of embodiment 2 is formed in the same manner as in example 1 on the glass substrate with the use of resin combination.
At this on the one hand, the thickness of the resin molding obtained is 25 microns.
<comparative example>
By with implement 1 identical in the way of prepare the resin combination of comparative example, difference is, the combination of TPC and IPC is turned into the dichloride component that the combination of TPC (0.212g, 0.00100mol) and IPC (1.908g, 0.00900mol) uses in step<3>. Hereafter, the resin molding of comparative example is formed in the same manner as in example 1 on the glass substrate with the use of resin combination.
At this on the one hand, the thickness of the resin molding obtained is 22 microns.
2. assess
According to the resin molding that the assessment of following method is obtained by embodiment and comparative example resin combination separately.
<total light transmittance>
The total light transmittance of resin molding in D line (sodium line) is measured with the use of haze meter (" NDH-2000 " that produce by NIPPONDENSHOKUINDUSTRIESCO., LTD.).
<double refraction>
The value of following " (the Nx+Ny)/2-Nz " that obtain resin molding. First, measure the phase differential of resin molding between 0 degree and 40 degree with the use of phase differential metering facility (" KOBRA-21ADH " that produce by OjiScientificInstruments) taking wavelength dispersion measurement pattern (wherein using light that light that wavelength is 545.4nm as the light of 479.2nm, wavelength, wavelength are 630.3nm and the light that wavelength is 748.9nm). Next, calculate resin molding phase differential between 0 degree and 40 degree under 550nm wavelength with the use of Sai Er Meyer (Sellmeier) expression formula. The value of " (the Nx+Ny)/2-Nz " under 550nm wavelength is obtained based on the phase difference value of resin molding and specific refractory power.
Total light transmittance and " (Nx+Ny)/2-Nz " value of the resin molding formed by the resin combination obtained separately in embodiment as above and comparative example are shown in following table 1 as a result. Then assessment result.
Table 1
As shown in table 1, in each resin molding obtained in an embodiment, the value of " (the Nx+Ny)/2-Nz " of resin molding is greater than 0.01. By contrast, each resin molding obtained in comparative example can not meet such relation.
In addition, the resin molding obtained in embodiment has high total light transmittance separately.
Claims (19)
1. a resin combination, comprises:
Polymkeric substance; With
Dissolve the solvent of described polymkeric substance,
Wherein said resin combination is for the formation of layer, and when the specific refractory power in direction in the face that described layer is vertical along two be defined as respectively " Nx " and " Ny " and described layer be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01.
2. resin combination according to claim 1, wherein said polymkeric substance is aromatic polyamide.
3. resin combination according to claim 2, wherein said aromatic polyamide comprises the rigid structure of the amount of 60mol% or higher.
4. resin combination according to claim 3, wherein said rigid structure is repeating unit expressed by the following formula:
Wherein n is the integer of 1 to 4, Ar1Represent by following general formula (A) or (B):
(wherein p=4; R1��R4And R5It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G1It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)), and Ar2Represent by following general formula (C) or (D):
(wherein p=4, R6��R7And R8It is selected from hydrogen atom, halogen atom (fluorine atom, chlorine atom, bromine atoms and atomic iodine), alkyl, the alkyl that is substituted separately if haloalkyl, nitro, cyano group, alkylthio, alkoxyl group, the alkoxyl group that is substituted are if halogenated alkoxy, aryl, the aryl that is substituted are such as halogenated aryl, alkyl ester group, the alkyl ester group being substituted and combination thereof; And G2It is selected from covalent linkage, CH2Group, C (CH3)2Group, C (CF3)2Group, C (CX3)2Group (X represents halogen atom), CO group, Sauerstoffatom, sulphur atom, SO2Group, Si (CH3)2Group, 9,9-fluorenes base, the 9,9-fluorenes base being substituted and OZO group (aryl that Z represents aryl or is substituted, such as phenyl, xenyl, perfluorinated biphenyl, the two phenyl fluorenes base of 9,9-and the two phenyl fluorenes base of 9,9-being substituted)).
5. resin combination according to claim 4, wherein said rigid structure comprises derived from 4, the structure of 4'-diamino-2,2'-bis trifluoromethyl p-diaminodiphenyl (PFMB) and derived from least one in the structure of tere-phthaloyl dichloride (TPC).
6. resin combination according to claim 2, wherein said aromatic polyamide is fully aromatic polyamide.
7. resin combination according to claim 2, at least one end of wherein said aromatic polyamide is by end-blocking.
8. resin combination according to claim 1, the total light transmittance of wherein said layer in sodium line (D line) is 60% or higher.
9. resin combination according to claim 1, wherein said resin combination also comprises mineral filler.
10., for forming a substrate for electronic component thereon, comprising:
Panel-shaped base body component, it has the first surface and two surface relative with described first surface; And
Electronic component form layers, it is arranged on the side on described first surface of described base member, comprises polymkeric substance and is constructed to be permeable on described electronic component form layers and forms described electronic component,
Wherein when the specific refractory power in direction in the described electronic component form layers face vertical along two be defined as respectively " Nx " and " Ny " and described electronic component form layers be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01.
11. substrates according to claim 10, the thermal expansivity (CTE) of wherein said electronic component form layers is 100ppm/K or less.
12. substrates according to claim 10, the mean thickness of wherein said electronic component form layers is 1 micron to 50 microns.
13. substrates according to claim 10, wherein said electronic component is organic EL.
14. 1 kinds manufacture the method for electronic installation, comprising:
Preparation substrate, described substrate comprises:
Panel-shaped base body component, it has the first surface and two surface relative with described first surface, and
Electronic component form layers, it is arranged on the side on described first surface of described base member and comprises polymkeric substance,
Wherein when the specific refractory power in direction in the described electronic component form layers face vertical along two be defined as respectively " Nx " and " Ny " and described electronic component form layers be defined as " Nz " along the specific refractory power of its thickness direction time, Nx, Ny and Nz meet relation " (Nx+Ny)/2-Nz " > 0.01;
The surface of the described electronic component form layers relative with described base member forms described electronic component;
Form tectum to cover described electronic component;
Using up and irradiate described electronic component form layers, thus described electronic component form layers is peeled off in interface between described base member and described electronic component form layers from described base member; And
By comprising described electronic component, described tectum is separated with described base member with the electronic installation of described electronic component form layers.
15. methods according to claim 14, the thermal expansivity (CTE) of wherein said electronic component form layers is 100ppm/K or less.
16. methods according to claim 14, the mean thickness of wherein said electronic component form layers is 1 micron to 50 microns.
17. methods according to claim 14, wherein said polymkeric substance is aromatic polyamide.
18. methods according to claim 17, wherein said aromatic polyamide comprises the rigid structure of the amount of 60mol% or higher.
The electronic installation that 19. 1 kinds of methods limited with the use of claim 14 manufacture.
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| Application Number | Priority Date | Filing Date | Title |
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| US201361895668P | 2013-10-25 | 2013-10-25 | |
| US61/895,668 | 2013-10-25 | ||
| PCT/JP2014/005385 WO2015059934A1 (en) | 2013-10-25 | 2014-10-23 | Resin composition, substrate, method of manufacturing electronic device and electronic devices |
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| JP (1) | JP2016535804A (en) |
| KR (1) | KR20160078351A (en) |
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| CN105849198A (en) * | 2013-10-25 | 2016-08-10 | 亚克朗聚合物系统公司 | Resin composition, substrate, method of manufacturing electronic device and electronic devices |
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| TW201300445A (en) * | 2011-06-29 | 2013-01-01 | Akron Polymer Systems Inc | Aromatic polyamide films for transparent flexible substrates |
| WO2013006452A2 (en) * | 2011-07-05 | 2013-01-10 | Akron Polymer Systems, Inc. | Aromatic polyamide films for solvent resistant flexible substrates |
| JP2013100392A (en) * | 2011-11-08 | 2013-05-23 | Toray Ind Inc | Aromatic polyamide, and laminate |
| JP2014005446A (en) * | 2012-06-01 | 2014-01-16 | Toray Ind Inc | Resin composition containing total aromatic polyamide and film |
| JP2014031452A (en) * | 2012-08-03 | 2014-02-20 | Sumitomo Bakelite Co Ltd | Polyamide resin solution and film using resin solution, and element and apparatus for display using film |
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| US9457496B2 (en) * | 2011-03-23 | 2016-10-04 | Akron Polymer Systems, Inc. | Aromatic polyamide films for transparent flexible substrates |
| CN105164207B (en) * | 2013-04-05 | 2017-07-28 | 住友电木株式会社 | Aromatic polyamide solution for the manufacture of display element, optical elements or illumination element |
| WO2014192684A1 (en) * | 2013-05-28 | 2014-12-04 | アクロン ポリマー システムズ， インク． | Aromatic polyamide solution for manufacturing display elements, optical elements or lighting elements |
-
2014
- 2014-10-23 JP JP2016524605A patent/JP2016535804A/en active Pending
- 2014-10-23 CN CN201480057961.4A patent/CN105658729A/en active Pending
- 2014-10-23 WO PCT/JP2014/005385 patent/WO2015059934A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201300445A (en) * | 2011-06-29 | 2013-01-01 | Akron Polymer Systems Inc | Aromatic polyamide films for transparent flexible substrates |
| WO2013006452A2 (en) * | 2011-07-05 | 2013-01-10 | Akron Polymer Systems, Inc. | Aromatic polyamide films for solvent resistant flexible substrates |
| JP2013100392A (en) * | 2011-11-08 | 2013-05-23 | Toray Ind Inc | Aromatic polyamide, and laminate |
| JP2014005446A (en) * | 2012-06-01 | 2014-01-16 | Toray Ind Inc | Resin composition containing total aromatic polyamide and film |
| JP2014031452A (en) * | 2012-08-03 | 2014-02-20 | Sumitomo Bakelite Co Ltd | Polyamide resin solution and film using resin solution, and element and apparatus for display using film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105849198A (en) * | 2013-10-25 | 2016-08-10 | 亚克朗聚合物系统公司 | Resin composition, substrate, method of manufacturing electronic device and electronic devices |
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| JP2016535804A (en) | 2016-11-17 |
| WO2015059934A1 (en) | 2015-04-30 |
| KR20160078351A (en) | 2016-07-04 |
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